CN109671768A - 一种低结温高耐压的GaN异质结场效应晶体管 - Google Patents

一种低结温高耐压的GaN异质结场效应晶体管 Download PDF

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CN109671768A
CN109671768A CN201811592251.8A CN201811592251A CN109671768A CN 109671768 A CN109671768 A CN 109671768A CN 201811592251 A CN201811592251 A CN 201811592251A CN 109671768 A CN109671768 A CN 109671768A
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陈万军
李佳
肖立杨
李茂林
信亚杰
施宜军
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University of Electronic Science and Technology of China
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Abstract

本发明设计功率半导体技术，具体的说是一种低结温高耐压的GaN异质结场效应晶体管。本发明的GaN异质结场效应晶体管，主要为通过在势垒层插入AlN区域来降低沟道峰值电场，进而达到增大耐压和减少散热的目的。另外，本发明采用导热特性良好的AlN作为器件的钝化层，不仅有助于抑制电流崩塌，还起到了加快散热的作用。本发明的优异效果为，提高了器件的反向耐压，改善了器件的输出特性，并降低了器件的沟道温度，从而抑制了电流崩塌和自热效应带来的危害。本发明尤其适用于具有高耐压能力和低沟道温度的GaN异质结场效应晶体管。

Description

一种低结温高耐压的GaN异质结场效应晶体管
技术领域
本发明属于功率半导体技术领域，涉及一种低结温高耐压的GaN异质结场效应晶体管。
背景技术
随着科技的进步，人类社会对电能的需求与日俱增，如何高效地应用电能成为当下不得不思考的问题。目前，几乎所有的电能都必须经过功率半导体器件进行功率变换之后才能供电子设备使用。功率半导体技术作为新能源和节能减排的基础和核心技术之一，有效促进了电能更有效、更节能、更环保地应用。近年来，随着新能源汽车等领域的兴起，功率半导体技术拥有了更广阔的应用前景。
从最早的Si器件，到第二代GaAs器件，再到以GaN和SiC为代表的宽禁带半导体器件，功率半导体器件的发展历经数年。由于Si和GaAs为代表的前两代半导体材料的局限性，第三代宽禁带半导体材料因为其优异的性能得到了飞速发展。氮化镓(GaN)材料作为第三代半导体材料的核心之一，相比Si，GaAs和碳化硅(SiC)特殊之处在于其所具有极化效应。AlGaN/GaN异质结由于极化效应在异质结界面靠近GaN侧产生了高浓度、高电子迁移率的二维电子气导电沟道，使得AlGaN/GaN HEMT器件具有导通电阻小、开关速度快、正向导通饱和电流密度大等特点，在器件应用中占据较大优势，是制作高压、高温、高频和大功率器件的理想材料，因此得到广泛关注和研究。
高速电子迁移率晶体管(HEMT)是一种异质结场效应晶体管，GaN与AlGaN接触形成的异质结具有高二维电子气浓度和高二维电子气迁移率。在此结构中，通过改变栅电压就可以控制由源极到漏极的电流，从而达到功率放大的目的。另外，GaN在较大的温度范围内都能够精确的控制自由载流子浓度，适合高温工作，使器件稳定性大大提高。此外，GaN材料的高热导率、大的热容量和高的击穿电场等优点都有助于GaN功率器件在大功率的条件下工作。因而，GaN基HEMTs称为高频大功率的首选。
在GaN HEMT器件应用过程中，一个严重限制GaN HEMT性能的问题是电流崩塌现象，即在直流(DC)性能测量时，经过较高电压冲击后，饱和电流密度与最大跨到减小、膝点电压和导通电阻上升，其最大的危害在于使得器件在高频大信号驱动下的输出电流幅度和直流特性相比剧烈下降，导致输出功率密度和功率附加效率减小，如何抑制电流崩塌是GaNHEMT研究过程中不可回避的问题。
GaN HEMT主要应用于微波毫米波功率器件和大功率电力电子器件，工作时会受到强电场和大电流的反复冲击，当AlGaN/GaN HEM T输出高功率密度时，器件由于发热量增大而导致沟道温度升高，引起各种声子散射机制的增强，从而导致器件沟道载流子迁移率降低，电流在饱和区会随着源漏电压的升高而下降，这种现象称为“自热效应”。自热效应会加速电迁移从而使栅极退化，并且可能损坏连接管芯和封装外壳的导线，引起一系列可靠性方面的问题。因此，如何抑制自热效应、降低沟道温度，是GaN功率器件发展过程中亟待解决的一个重要问题。
发明内容
为了解决上述问题，本发明提出了一种低结温高耐压的GaN异质结场效应晶体管。该晶体管不仅可以有效抑制GaN HEMT的电流崩塌，还可以减低器件沟道温度，进而提高器件的工作性能。
本发明的技术方案为
如图1所示，一种低结温高耐压的GaN异质结场效应晶体管，从下到上依次包括SiC衬底9、AlN成核层过渡8、GaN缓冲层7、InGaN背势垒层6、GaN沟道层5、AlN插入层4、AlGaN势垒层3、AlN势垒区域2以及AlN钝化层1。在势垒层的上方，拥有欧姆金属源极11和欧姆金属漏极12。所述AlGaN势垒层3、AlN插入层4与GaN沟道层5一起形成二维电子气沟道，其特征在于AlN插入层4的应用可以较好的改善器件的2DEG传送能力，并优化器件的开关特性和栅肖特基10泄露特性；AlN成核层8位于GaN缓冲层7与SiC衬底9之间，其特征在于AlN可以减小GaN缓冲层7与SiC衬底9之间因晶格失配而导致的界面张力，该成核过渡层可减小界面失配、缺陷或陷阱效应引起的电流崩塌现象。
所述GaN沟道层5与GaN缓冲层7之间有InGaN背势垒层6，其特征在于InGaN背势垒层6的加入可以提高对2DEG的限域性，从而改善了器件高压下的夹断特性，有效地抑制了电流崩塌效应，提高了器件的效率和线性度。
所述AlN钝化层1用于降低器件沟道温度，其特征在于具有良好的导热能力，并能抑制电流崩塌；采用所述AlN势垒区域2代替传统的GaAlN，其特征在于可以减小沟道中的峰值电场、提高击穿电压并降低沟道温度。
作为优选方式，器件总宽度约为2.3um，其中栅极宽度为0.3um，源极和漏极宽度为0.3um，栅源、栅漏间距为0.7um。
作为优选方式，所述SiC衬底层厚度为150um。
作为优选方式，所述AlN成核层的厚度大约为50nm。
作为优选方式，所述GaN缓冲层厚度大约为1.8um。
作为优选方式，所述InGaN背势垒层厚度大约为5-10nm。
作为优选方式，所述GaN沟道层厚度大约为30-50nm。
作为优选方式，所述AlN插入层厚度大约为1-5nm。
作为优选方式，所述AlGaN势垒层厚度约为30-40nm。
作为优选方式，所述AlN势垒区域厚度约为20nm，长度为0.5um。
作为优选方式，所述AlN钝化层厚度为20nm。
作为优选方式，所述源电极和漏电极为欧姆接触，电极材料由下面一组材料中选出，该组材料包括但不限于Ti/Al/Ni/Au合金，Ti/Al/Ti/Au合金。所述栅电极为肖特基接触，电极材料由下面一组材料中选出，该组材料包括但不限于Ni/Au合金，Pd/Au合金。
为了解决目前GaN HEMT遇到的电流崩塌和沟道温度过高导致自热效应的问题，本发明提出了一种低结温高耐压的GaN异质结场效应晶体管，与传统GaN HEMT相比，本发明的创新性有以下几点：
1、相比于传统GaN HEMT单一的GaN缓冲层，本发明巧妙地将GaN区域分为GaN沟道层5和GaN缓冲层7，在缓冲层和沟道层之间插入InGaN背势垒层6，背势垒层的插入提高了对2DEG的限域性，从而改善了器件高压下的夹断特性，有效地抑制了电流崩塌效应，提高了器件的效率和线性度。
2、相比于传统GaN HEMT不采用钝化层或采用Si3N4作为钝化层，本发明采用AlN钝化层1，该钝化层不仅可以抑制电流崩塌，改善输出特性，而且AlN良好的导热特性可以使其加快器件沟道的散热，从而降低器件的沟道温度。
3、相比于传统GaN HEMT单一的AlGaN势垒层，本发明在栅极下方引入一块AlN势垒区域2，该区域的引入可以显著降低器件峰值电场，进而增大器件击穿电压，并减少沟道自身产热。值得注意的是，由于传统沟道峰值温度出现在器件栅极漏测，因此，本发明AlN势垒区域左侧与栅极左侧对齐，右侧与栅极右侧相比，伸长0.2um，这样可以有效降低器件峰值电场和峰值温度。
除此之外，本发明在GaN缓冲层7与SiC衬底9之间引入AlN成核过渡层8，成核过渡层AlN可以减小GaN缓冲层7与SiC衬底9之间因晶格失配而导致的界面张力，进而减小界面失配、缺陷或陷阱效应引起的电流崩塌现象。本发明在AlGaN势垒层3与GaN沟道层5之间引入AlN插入层4，三者一起形成二维电子气沟道，AlN插入层4的引入可以较好的改善器件的2DEG传送能力，并优化器件的开关特性和栅肖特基泄露特性。
本发明的有益效果为：
如仿真结果图2所示，本发明的HEMT结构与传统HEMT结构相比，峰值温度依旧出现在栅极漏测区域，这是由沟道电场分布决定的，但是本发明HEMT结构的器件峰值温度相比于传统HEMT结构下降了约20K。这说明一方面AlN势垒区域2的使用降低了沟道的峰值电场，进而抑制了沟道产热，降低了器件沟道温度，另一方面本发明钝化层材料选择导热特性良好的AlN，不仅可以抑制电流崩塌，而且有助于加快沟道散热，两者的使用导致了本发明HEMT结构沟道温度的下降。
如仿真结果图3所示，本发明的HEMT结构与传统HEMT结构相比，器件耐压提高了约47V，这说明AlN势垒区域2的使用改善了沟道的电场分布情况，降低了沟道电场峰值，进而提高了器件的耐压能力。
如仿真结果图4所示，本发明的HEMT结构与传统HEMT结构相比，在同样的栅电压下，器件输出饱和电流更高，输出特性得到了较好的改善。这说明钝化层1和背势垒层6的使用提高了对2DEG的限域性，从而有效地抑制了电流崩塌效应，提高了器件的效率和线性度，改善了器件的输出特性
附图说明
图1是本发明提出的一种低结温高耐压的GaN异质结场效应晶体管结构示意图；
图2是本发明HEMT新结构与传统HEMT结构相比，沟道温度分布情况示意图；
图3是本发明HEMT新结构与传统HEMT结构相比，器件反向耐压示意图；
图4是本发明HEMT新结构与传统HEMT结构相比，器件输出特性示意图。
具体实施方式
发明内容部分已经对本发明的技术方案做了详细描述，在此不再赘述。

Claims (3)

1.一种低结温高耐压的GaN异质结场效应晶体管，从下到上依次包括层叠设置的SiC衬底(9)、GaN缓冲层(7)、GaN沟道层(5)、AlGaN势垒层(3)以及AlN钝化层(1)；在AlGaN势垒层(3)两端的上表面，具有欧姆金属源极(11)和欧姆金属漏极(12)，在AlGaN势垒层(3)中部的上表面，具有栅电极(10)，所述栅电极(10)为肖特基接触；其特征在于，
所述栅电极(10)正下方的AlGaN势垒层(3)上层，具有AlN势垒区域(2)，且AlN势垒区域(2)还向靠近欧姆金属漏极(12)的一侧延伸；所述AlN势垒区域(2)用于减小沟道中的峰值电场、提高击穿电压并降低沟道温度；
所述SiC衬底(9)和GaN缓冲层(7)之间还具有AlN成核层(8)，AlN成核层(8)用于减小GaN缓冲层(7)与SiC衬底(9)之间因晶格失配而导致的界面张力；
所述GaN缓冲层(7)和GaN沟道层(5)之间具有InGaN背势垒层(6)，InGaN背势垒层(6)用于抑制电流崩塌效应；
所述GaN沟道层(5)和AlGaN势垒层(3)之间具有AlN插入层(4)，AlN插入层(4)与GaN沟道层(5)和AlGaN势垒层(3)一起形成二维电子气沟道。
2.根据权利要求1所述的一种低结温高耐压的GaN异质结场效应晶体管，其特征在于，所述SiC衬底(9)厚度为150um，AlN成核层(8)的厚度为50nm，GaN缓冲层(7)厚度为1.8um，InGaN背势垒层(6)厚度为5-10nm，GaN沟道层(5)厚度为30-50nm，AlN插入层(4)厚度为1-5nm，AlGaN势垒层(3)厚度为30-40nm，AlN势垒区域(2)厚度为20nm，长度为0.5um，AlN钝化层(1)厚度为20nm。
3.根据权利要求2所述的一种低结温高耐压的GaN异质结场效应晶体管，其特征在于，所述欧姆金属源极(11)和欧姆金属漏极(12)采用的材料为Ti/Al/Ni/Au合金，或Ti/Al/Ti/Au合金；所述栅电极(10)采用的材料为i/Au合金，或Pd/Au合金。
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