CN109661715A - The manufacturing method of epitaxially growing equipment and epitaxial wafer - Google Patents
The manufacturing method of epitaxially growing equipment and epitaxial wafer Download PDFInfo
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- CN109661715A CN109661715A CN201780054077.9A CN201780054077A CN109661715A CN 109661715 A CN109661715 A CN 109661715A CN 201780054077 A CN201780054077 A CN 201780054077A CN 109661715 A CN109661715 A CN 109661715A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
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Abstract
Epitaxially growing equipment 1 includes reacting furnace 2, imports access 8, a plurality of flow path 15a, branch path 14a and segmentation access 16b.Reacting furnace 2 makes epitaxial layer vapor phase growth in substrate W by unstrpped gas.Importing access 8 includes: entrance 8a, is led in reacting furnace 2；8b is exported, the top of entrance 8a is located at and leans on 2 side of reacting furnace compared with entrance 8a and reaches in reacting furnace 2；And rank portion 8c, it is located at and imports in access 8.A plurality of flow path 15a is 32 or more, and the outside of entrance 8a is extended to from entrance 8a.Branch path 14a collaborates upstream side of a plurality of flow path 15a from the side entrance 8a towards unstrpped gas in contest shape.Segmentation access 16b is the access that will be imported access 8 and a plurality of flow path 15a and accordingly be split to form, and connect and communicate with a plurality of flow path 15a respectively.A kind of epitaxially growing equipment is provided as a result, having good uniformity for the film thickness for the epitaxial layer being grown on substrate can be made.
Description
Technical field
The present invention relates to the manufacturing methods of a kind of epitaxially growing equipment and epitaxial wafer.
Background technique
Along with the miniaturization of semiconductor integrated circuit, it is formed in the semiconductor substrate as semiconductor integrated circuit basis
Pattern be micronized, and more stringent is become to quality required by semiconductor substrate.To matter required by semiconductor substrate
It is especially extremely high to the requirement of flatness among amount.Moreover, about the epitaxial wafer for being used for multiple use in semiconductor substrate,
The flatness of the flatness and epitaxial layer of taking into account substrate is project.Moreover, the flatness of the epitaxial layer is largely by extension
The film thickness distribution of layer influences.As a result, in order to meet the flatness of required epitaxial layer, it is necessary to make the film thickness distribution of epitaxial layer
Uniformity is better.
Currently, using the epitaxially growing equipment of one chip for the epitaxial wafer of manufacture diameter 300mm.Such gas phase is raw
Growth device generally comprises: supply make outer layer growth in the mechanism of the unstrpped gas of substrate, by the unstrpped gas supplied and
In substrate grown epitaxial layer reacting furnace and by reacting furnace gas discharge mechanism.Machine as base feed gas
Structure sequentially has injection lid (hereinafter referred to as " covering "), baffle and injection inserts (hereinafter, claiming from the upstream side of unstrpped gas
For " inserts ").Covering has the space passed through when importing unstrpped gas in reacting furnace for unstrpped gas.Baffle is to be held on lid
Tabular component between inserts, and have and guide the unstrpped gas in lid to multiple through holes of inserts, pass through the perforation
Hole and adjust the raw material gas flow towards inserts.Inserts has and will be guided by the unstrpped gas of the through hole of baffle to reacting furnace
The a plurality of flow path of entrance.Unstrpped gas is guided to reacting furnace via above-mentioned each component.It is guided the reacting furnace of unstrpped gas
Include: entrance, leads in reacting furnace and the unstrpped gas for being provided from upstream flowing flows into；Outlet, be located at entrance top and
It by reaction furnace side and is reached in reacting furnace compared with entrance；Access connects entrance and outlet；And rank portion, it is located in access.
The unstrpped gas for being directed to reacting furnace entrance from inserts crosses the rank portion reached in reacting furnace inner gateway and is directed to reaction
In furnace.By make the unstrpped gas being guided by this method in react on substrate and in grown on substrates epitaxial layer.Raw material
Gas in reacting furnace in reacting and machine that the gas that generates and the unstrpped gas to be come to an end with unreacted pass through discharge gas
Structure is expelled to outside reacting furnace.
It is most important when growing the epitaxial layer for changing film thickness distribution more evenly using the epitaxially growing equipment of this one chip
It is on the substrate surface guided uniform raw material gas flow to reacting furnace.In current one chip epitaxially growing equipment, temporarily
When be imported into the raw material gas flow system of lid and become arbitrary flowing by baffle, and flow into a plurality of (for example, 10 in inserts
Item) flow path.However, raw material gas flow formed via baffle itself can not be obtained and be kept off due to pressure balance dominates in covered
The corresponding speed of perforation bore dia of plate.In turn, the raw material gas flow being segmented via baffle is guided by inserts
To substrate, so raw material gas flow depends on the flow path number of inserts.The unstrpped gas that direction is flowed in the face of substrate as a result,
The unevenness of speed corresponding with flow path number (such as 10) of inserts will be formed, is fed to the speed point of the unstrpped gas on substrate
Cloth is determined by development trend.Alternatively, the unstrpped gas for being fed to reacting furnace entrance is crossed towards in the access in reacting furnace
Rank portion be directed in reacting furnace, and become the flowing that is influenced by rank portion shape.Specifically, the rank portion packet being located in access
Include: the 1st face, in reaction furnace side centered in the axis that vertical direction extends in arc-shaped bend and with the entrance pair of access
To；And the 2nd face, the outlet of access is extended to from the upper end in the 1st face.Therefore, it is directed to the raw material gas flow of the access
When rank portion to be crossed by the 1st face and close to access width direction outside.It is controlled outside reacting furnace as a result,
Unstrpped gas VELOCITY DISTRIBUTION can change before importing in reacting furnace, be directed into substrate to become difficult to accurately control
On unstrpped gas VELOCITY DISTRIBUTION.Due to the limitation and control unstrpped gas speed point in such epitaxially growing equipment structurally
The control difficulty of cloth, therefore become difficult to the equal of epitaxial layer film thickness distribution required by meeting the epitaxial wafer for tip part
Even property.
Therefore, in order to meet the uniformity of such film thickness distribution, to the top circle as the part for constituting reacting furnace roof
The shape on top is optimized.Changed by the globality that the optimization has obtained being grown on film thickness distribution in the epitaxial layer on substrate
It is kind.However, still will form by the unstrpped gas speed that inserts is imported into direction in real estate corresponding with the flow path of inserts
A plurality of unevenness.If using this unstrpped gas for having speed unevenness for example in around the axis extended along vertical direction
The substrate grown epitaxial layer of rotation generates the film thickness of epitaxial layer in concentric circles
It is uneven.Moreover, the epitaxial wafer for generating this unevenness is unable to satisfy required flatness, so supply must be made to substrate
Unstrpped gas velocity deviation homogenization.
Therefore, following operation has been carried out: by implementing the original for making to import on substrate and improvement to being formed in the flow path that covers
Expect the speed homogenization of gas.For example, as described in Patent Document 1, using making to lead to positioned at the downstream side (reaction furnace side) of lid
Flow path in the lid of multiple outlets is towards the upstream side of lid in flow path made of contest shape interflow.As a result, with the raw material in covering
Gas distributes unstrpped gas from upstream side towards downstream side, so that the unstrpped gas in each outlet supply from lid is fast each other
The unevenness of degree distribution is improved.However, the entrance of reacting furnace is reached in reacting furnace with by the entrance since rank portion is located at
Outlet connection access in, so upset by the VELOCITY DISTRIBUTION of unstrpped gas that lid is adjusted by rank portion, therefore nothing
Method is maintained to reacting furnace.In order to maintain the VELOCITY DISTRIBUTION of unstrpped gas to reacting furnace, need such as to cancel the reaction of rank portion
The significantly transformation of furnace itself.
In addition, for example, a kind of device disclosed in Patent Document 2, accordingly making with a plurality of flow path in inserts will be former
Material gas guides access (access with rank portion) segmentation to reacting furnace, to inhibit rank portion of the raw material gas flow by access
It upsets.Moreover, disclosing a kind of device in patent document 3, the flow path in inserts is divided into 64 or more and inhibits unstrpped gas
The unevenness of stream.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2009-277730 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2007-324286 bulletin
Patent document 3: Japanese Unexamined Patent Publication 2011-86887 bulletin
Summary of the invention
Technical problem to be solved
However, the flow path of the unstrpped gas guided from upstream side is not formed into contest shape in patent document 2 and 3.Cause
This, can not be such that the speed of unstrpped gas fully homogenizes each other by the unstrpped gas of flow path each in inserts.As a result, from embedding
Part, which is directed to the raw material gas flow on the substrate of reacting furnace, accordingly to generate unevenness with the flow path number in inserts, thus can not
Making the film thickness for the epitaxial layer for being grown on substrate has excellent homogeneity.
The issue of the present invention is to provide the manufacturing method of a kind of epitaxially growing equipment and epitaxial wafer, can make to grow
There is good uniformity in the film thickness of the epitaxial layer on substrate.
Solve the method and invention effect of technical problem
Epitaxially growing equipment of the invention characterized by comprising
Reacting furnace makes epitaxial layer vapor phase growth in substrate by unstrpped gas；
Access comprising towards in reacting furnace entrance and positioned at entrance top and compared with entrance by reaction furnace side and
The outlet in reacting furnace is reached, entrance and outlet are connected, so that unstrpped gas be imported in reacting furnace；
Rank portion is located in access, and extends to outlet including the 1st face with entrance opposite direction and from the upper end in the 1st face
2nd face；
A plurality of flow path extends to the outside of entrance from entrance, for guiding unstrpped gas to entrance, and for 32 with
On；
Converging roads collaborate for upstream side of a plurality of flow path from entrance side towards unstrpped gas in contest shape and in unstripped gas
The upstream side of body is connected；And
Access is accordingly split along the direction that unstrpped gas flows with a plurality of flow path by a plurality of segmentation access,
And it connect and communicates with a plurality of flow path respectively.
Epitaxially growing equipment according to the present invention, due to making to flow from upstream side towards downstream side by the converging roads of contest shape
Road branch and become 32 or more a plurality of flow paths, so can make to flow the mutual speed of unstrpped gas in each flow path
Effectively homogenize.Moreover, the raw material gas flow after the homogenization is directed to towards the access in reacting furnace.Herein, this is logical
Road is divided into the segmentation access for connecting and communicating with each of 32 or more a plurality of accesses.Thereby, it is possible to maintain unstripped gas
The state that body stream is homogenized in converging roads and flows in a plurality of flow path guides unstrpped gas to reacting furnace.Therefore,
Can make the film thickness for the epitaxial layer being grown on substrate has excellent homogeneity.Furthermore in this manual, so-called " contest shape ",
Mean for example most lower from the uppermost of the contest table of complete two branch construct (impartial superseded contest table) towards lowermost is located at
Line global shape made of each place branch of point.
Embodiment according to the present invention, segmentation access extend via rank portion towards outlet from entrance.
Even if the raw material gas flow and the rank portion in segmentation access that are imported into a certain segmentation access as a result, collide,
It can effectively inhibit and the raw material gas flow for being imported into other segmentation accesses is impacted.
Embodiment according to the present invention, a plurality of flow path add up to 64 or more.
It can make having good uniformity for the film thickness for the epitaxial layer being grown on substrate as a result,.
Embodiment according to the present invention, a plurality of flow path is along horizontal plane configuration side by side respectively.
Specifically, a plurality of flow path adjoins each other along horizontal plane.
Having good uniformity for the film thickness for the epitaxial layer being grown on substrate can effectively be made as a result,.
Also, another embodiment according to the present invention, including the column sections extended between autoreaction furnace one flow path of direction.
Even if there are column sections as a result, it can also make having good uniformity for the film thickness for the epitaxial layer being grown on substrate.
Also, the manufacturing method of epitaxial wafer of the invention characterized by comprising
The step of shunting, makes outer layer growth in being in by raw material gas flow in the reacting furnace of substrate directed through unstrpped gas
Contest shape splits into 32 or more；
The step of guidance, the shunting quantity for 32 or more unstrpped gas is split in the step of maintaining shunting and will
Unstrpped gas is guided to reacting furnace；And
The step of growth, makes outer layer growth in substrate using the unstrpped gas that the step of passing through guidance is guided.
In the manufacturing method of epitaxial wafer according to the present invention, maintain by being in that contest shape splits into 32 the step of shunting
The shunting quantity of unstrpped gas more than item, and unstrpped gas is guided to reacting furnace.As a result, through shunting the step of
The unstrpped gas of shunting effectively homogenizes speed each other.Moreover, passing through point of the unstrpped gas after the maintenance homogenization
It flows quantity and guides unstrpped gas to reacting furnace, it can be in the epitaxial layer of grown on substrates film thickness having good uniformity.Cause
This, can manufacture the epitaxial wafer of the film thickness of epitaxial layer having good uniformity.
Raw material gas flow is split into 64 or more in the step of shunting by embodiment according to the present invention.
The more good epitaxial wafer of uniformity of the film thickness of epitaxial layer can be manufactured as a result,.
Detailed description of the invention
Figure 1A is the constructed profile for indicating a part of epitaxially growing equipment of one embodiment of the invention.
The plan view for the component that Figure 1B is passed through by the gas that explanation leads to epitaxially growing equipment substrate shown in Figure 1A.
Fig. 2A is the front view for indicating the injection inserts of Figure 1B.
Fig. 2 B is sectional view of the Fig. 2A along IIB-IIB.
Fig. 3 A is to indicate to be configured at the cutting part sectional view corresponding with Figure 1A for importing access in Figure 1B.
Fig. 3 B is the plan view for indicating the cutting part of Fig. 3 A.
Fig. 3 C is the right side view for indicating the cutting part of Fig. 3 B.
Fig. 4 is an example sectional view corresponding with Figure 1B for indicating the epitaxially growing equipment in embodiment 2.
Fig. 5 is an example sectional view corresponding with Figure 1B for indicating the epitaxially growing equipment in comparative example 1.
Fig. 6 A is the film thickness distribution curve graph of the epitaxial wafer measured in expression embodiment 1.
Fig. 6 B is the film thickness distribution curve graph of the epitaxial wafer measured in expression embodiment 2.
Fig. 6 C is the film thickness distribution curve graph of the epitaxial wafer measured in expression comparative example 1.
Fig. 7 A is the film thickness distribution curve graph of the epitaxial wafer measured in expression comparative example 2.
Fig. 7 B is the film thickness distribution curve graph of the epitaxial wafer measured in expression comparative example 3.
Fig. 7 C is the film thickness distribution curve graph of the epitaxial wafer measured in expression embodiment 3.
Fig. 7 D is the film thickness distribution curve graph of the epitaxial wafer measured in expression embodiment 1.
Fig. 7 E is the film thickness distribution curve graph of the epitaxial wafer measured in expression embodiment 4
Description of symbols
1: epitaxially growing equipment 2: reacting furnace
3: base ring 6: upper liner
7: lower liner 8: importing access (access)
8a: entrance 8b: outlet
8c: the 8c1: the 1 face of rank portion
8c2: the 2 face 10: pedestal
14: injection lid 14a: branch path (converging roads)
15: injection inserts 15a: flow path
16: cutting part 16a: partition wall
16b: segmentation access W: substrate
Specific embodiment
Figure 1A indicates one chip epitaxially growing equipment 1 as an embodiment of the present invention.By epitaxially growing equipment 1 in base
Plate W vapor phase growth epitaxial layer, to manufacture epitaxial wafer.
Epitaxially growing equipment 1 includes the reacting furnace 2 of receiving substrate W.Reacting furnace 2 is formed as container-like.Reacting furnace 2 includes:
The base ring 3 of cylinder or annular shape；Upper dome 4, covers and constitutes the roof of reacting furnace 2 by base ring 3 from upside；And lower circle
Top 5, covers and constitutes the bottom side of reacting furnace 2 by base ring 3 from downside.
Base ring 3 is the component for constituting 2 pedestal of reacting furnace.Base ring 3 includes: introducing port 3a, introduces gas into pedestal
The inside of ring 3；And outlet 3b, the gas of 3 inside of base ring is expelled to the outside of base ring 3.Introducing port 3a and discharge
The axes O that mouthful 3b is formed as using the center line of base ring 3, for example extends along vertical direction as the circular-arc curved opening of axis,
It can be described as the opening of arc-shaped.In addition, with the gas flowing side on introducing port 3a and following substrate W surfaces for importing access 8
To (left and right directions of paper in Figure 1A) and the two direction at right angle in the direction (up and down direction of paper in Figure 1A) of axes O
Width on (in Figure 1A with paper direction at right angle) is the outer diameter of the diameter of substrate W or more, following preheating rings 12 or less.
Upper liner 6 and lower liner 7 are located at the inside of base ring 3.Upper liner 6 and lower liner 7 are that formation will be from introducing port 3a
The gas of importing guides the importing access 8 to reacting furnace 2 and guides the gas in reacting furnace 2 to by the gas and is discharged
The component of the drain passageway 9 of outlet 3b outside to reacting furnace 2.
Upper liner 6 is formed as the embeddable annular shape to 3 inner circumferential of base ring.Upper liner 6 is to be embedded in 3 inside of base ring
State is located at upper 4 side of dome.
Lower liner 7 is formed as the embeddable annular shape to 3 inside of base ring.Lower liner 7 is to be embedded in 3 inside of base ring
State is placed on lower dome 5.
Include: entrance 8a by the importing access 8 that upper liner 6 and lower liner 7 are formed, leads in reacting furnace 2；8b is exported,
Its top for being located at entrance 8a and compared with entrance 8a by 2 side of reacting furnace and reaching in reacting furnace 2；And rank portion 8c, being located at will enter
In the access that mouth 8a is connect with outlet 8b.Entrance 8a is formed as in a manner of corresponding with the introducing port 3a of base ring 3 with axes O
For the circular-arc curved opening of axis.Rank portion 8c includes: the 1st face 8c1, opposite with entrance 8a；And the 2nd face 8c2, from the 1st
The upper end of face 8c1 extends to outlet 8b.1st face 8c1 is using axes O as the circular-arc curved of axis, and the 2nd face 8c2 becomes horizontal plane.
It imports access 8 and is equivalent to " access " of the invention.Furthermore the drain passageway 9 and importing formed by upper liner 6 and lower liner 7 is logical
Road 8 is identical, so omit the description.
It include: pedestal 10 inside reacting furnace 2, for loading substrate W；Supporting part 11, supporting base 10；And preheating ring
12, surround pedestal 10.Supporting part 11 can be rotated by driving means (not shown) around axes O.
The lamp 13 as heating source is configured with above and below the outside of reacting furnace 2 shown in Figure 1A, the outside or so of reacting furnace 2 is matched
It is equipped with the mechanism for providing gas tangentially to the mechanism in reacting furnace 2 and the gas in reacting furnace 2 being discharged.Furthermore in Figure 1A
In, the mechanism of a part of supply gas and the mechanism of discharge gas is omitted.
Figure 1B is the signal that book is illustrated to the mechanism for supplying the various gases for making outer layer growth in substrate W
Figure.In fig. ib, each component that the gas towards substrate W is passed through is illustrated with overlooking schematic diagram.The gas supplied according to
The secondary injection lid 14 (hereinafter referred to as " lid 14 ") by the downside of Figure 1B, injection inserts 15 (hereinafter referred to as " inserts 15 "), cutting part
16, the sequence of lower liner 7, preheating ring 12, pedestal 10 is by each component and reaching substrate W.Furthermore in fig. ib, substrate W, base
Seat 10, preheating ring 12 and 7 system of lower liner are with the shape representation of semicircle shape.
Lid 14 is the component that will be provided to the gas of substrate W by mass flow controller (not shown) and import.Lid 14 wraps
Include the branch path 14a for distributing imported gas.Branch path 14a is the stream for being divided into the contest shape of multiple groups (being 3 groups in Figure 1B)
Road 14a1.The branch flow passage B for connecting and communicating with inserts 15 is located at the lowest point of lowermost in each flow path 14a1 of contest shape.Point
Zhi Liulu B is in branch path 14a generally 32 or more (being 64 in Figure 1B).In addition, in each flow path 14a1 of contest shape
Uppermost although not shown, but is connected with the flow path being connected with the upstream side of gas.Branch path 14a is equivalent to " interflow of the invention
Road ".
Fig. 2A and Fig. 2 B is the schematic diagram for indicating inserts 15.As shown in Figure 2 B, inserts 15 is formed to have the side of arc-shaped
S1 and tabular with the S2 in S1 opposite opposite.Inserts 15 include from it is opposite while S2 towards while S1 linearly penetrate through it is more
Flow path 15a.As shown in Figure 1B, a plurality of flow path 15a is simply formed with quantity corresponding with branch flow passage B.About each flow path 15a,
One end connects and communicates with corresponding branch flow passage B, and the other end is connect as shown in Figure 1A with the entrance 8a for importing access 8 and phase
It is logical.The outside (outside of reacting furnace 2) of each flow path 15a from the entrance 8a towards the entrance 8a that import access 8 are horizontally extending.
At least part of inserts 15 is inserted into introducing port 3a and is installed on reacting furnace 2.Also, as shown in Figure 1B, a plurality of flow path 15a along
Horizontal plane configuration side by side respectively, and a plurality of flow path 15a adjoins each other along horizontal plane.
As shown in Figure 3A, cutting part 16 is to be installed on to import in access 8 and be divided into a plurality of access for that will import access 8
Component.As shown in Fig. 3 B and Fig. 3 C, cutting part 16 is formed as corresponding with the importing shape of access 8 shown in figure 1A.Such as Figure 1B
Shown, cutting part 16 includes the segmentation that will be imported the partition wall 16a of access 8 (Figure 1A) segmentation and be split to form by partition wall 16a
Access 16b.As shown in Figure 3A, the entrance 8a of partition wall 16a from importing access 8 extends via rank portion 8c towards outlet 8b, edge
Gas in import the direction flowed in access 8 will import access 8 be divided into it is a plurality of.Specifically, as shown in Figure 1B, partition wall
16a will import access 8 (Figure 1A) Ground Split corresponding with a plurality of flow path 15a.The a plurality of segmentation access formed by partition wall 16a
16b is simply formed with quantity corresponding with a plurality of flow path 15a.Moreover, respectively dividing access 16b and corresponding flow path 15a connection and phase
It is logical.
After above-mentioned lid 14, inserts 15, cutting part 16, by lower liner 7, preheating ring 12, pedestal 10 and by gas
Body is supplied to substrate W.For example, vapor phase growth gas is supplied to reacting furnace 2 when vapor phase growth.As vapor phase growth gas
Body, for example including becoming the unstrpped gas of silicon single-crystal film raw material, assign the diluted carrier gas of unstrpped gas and to single crystal film conductive
The dopant gas of type.
More than, the main component of epitaxially growing equipment 1 is illustrated.Passing through epitaxially growing equipment 1 on substrate W
Grown epitaxial layer and when manufacturing epitaxial wafer, firstly, substrate W is made to be placed in the pedestal 10 of reacting furnace 2.Then, towards reacting furnace 2
The mass flow controller for being fed through illustration omitted controls the vapor phase growth gas of flow.Then, vapor phase growth gas quilt
It guides to each flow path 14a1 (Figure 1B) uppermost for the contest shape for being divided into 3 groups, is distributed from uppermost towards each branch flow passage B.
Finally, vapor phase growth gas is divided into 64 gas streams (branch flow passage B), and 64 each flow paths being directed in inserts 15
15a (the step of shunting).Then, importing access 8 shown in Fig. 3 A is reached by the vapor phase growth gas of flow path 15a.Arrival is led
The vapor phase growth gas for entering access 8 flows in the segmentation access 16b for connecting and communicating with flow path 15a, and maintains to pass through contest
Each flow path 14a1 (B referring to Fig.1) of shape and be divided into 64 vapor phase growth gas stream (quantity made of being split) import reaction
In furnace 2 (the step of importing).By the vapor phase growth gas that is imported in vapor phase growth silicon single crystal thin film on substrate W, to make
Make silicon epitaxial wafer.
In implementation form of the invention, as shown in Figure 1B, for vapor phase growth gas from the upstream side of vapor phase growth gas
The branch path 14a flowed towards reacting furnace 2 (downstream side) branches into 32 or more branch flow passage B, and and inserts in contest shape
15 a plurality of flow path 15a is connected.It therefore, can be effectively mutual by the vapor phase growth gas flowed in a plurality of flow path 15a
Speed homogenization.Moreover, the vapor phase growth gas stream after the homogenization passes through the segmentation access for connecting and communicating with each flow path 15a
16b, and be directly directed in reacting furnace 2.It therefore, can be to maintain to homogenize by branch path 14a and in a plurality of flow path 15a
The mode of the vapor phase growth gas stream of middle flowing guides vapor phase growth gas to reacting furnace 2.Therefore, can make to be grown on substrate
The film thickness of epitaxial layer on W has excellent homogeneity.Especially, shown in as the following examples, if applying the present invention to needle
It is then preferable to the vapor phase growth of the substrate W of diameter 200mm or more.
Embodiment
In order to confirm effect of the invention, following experiment has been carried out.Have hereinafter, enumerating Examples and Comparative Examples to the present invention
Be illustrated to body, but its etc. do not limit the present invention.
Embodiment
In embodiment 1, using diameter 300mm, the silicon single crystal substrate of crystal plane orientation (100), filled by vapor phase growth
It sets 1 and makes epitaxial wafer, and measure the film thickness distribution of made epitaxial wafer.It, will be away from made when measuring film thickness distribution
Waffer edge 5mm region except, be measured along film thickness of the wafer diameter direction to 33 points of measuring point.Then, root
The uniformity (%) of film thickness as shown below and the deviation (%) of film thickness are calculated according to each film thickness measured, to obtain extension crystalline substance
The film thickness distribution of piece.The uniformity (%) of film thickness uses following algorithm, that is, based on the maximum film thickness for measuring resulting film thickness and most
Small film thickness subtracts the value of minimum thickness gained divided by the value that maximum film thickness is added to gained with minimum thickness with maximum film thickness, right
It is obtained by the value of above-mentioned division gained multiplied by 100.The deviation (%) of film thickness uses following algorithm.Specifically, to be surveyed
Film thickness at 1 fixed measuring point subtracts 1 divided by the value of the film thickness average value gained at 33 points of measuring point, calculates to by upper
State the value that the value of subtraction gained is obtained multiplied by 100.Then, the value of calculating is subtracted 100 in turn.
In embodiment 2, made similarly to Example 1 in addition to this using epitaxially growing equipment 101 shown in Fig. 4
Epitaxial wafer, and measure the film thickness distribution of epitaxial wafer.Hereinafter, epitaxially growing equipment 101 is concretely demonstrated.For with
The identical composition of epitaxially growing equipment 1, using same reference numerals and omits the description.Epitaxially growing equipment 101 includes for mentioning
The column sections P of high 2 intensity of reacting furnace, and including injection lid 114 (hereinafter referred to as " lid 114 ") corresponding with column sections P, injection
Inserts 115 (hereinafter referred to as " inserts 115 ") and cutting part 116.For convenience of explanation, illustrate since the inserts 115.Inserts 115
Be formed to have arc-shaped while S1 and with while S1 opposite direction opposite side S2 2 plates P1, P2.Inserts 115 includes from opposite
While S2 towards while the S1 a plurality of flow path 115a that linearly penetrates through.32 flow path 115a are respectively formed in each plate P1, P2.It is each flat
Plate P1, P2 are spaced from each other gap and configure, and gap of the column sections P from reacting furnace 2 towards plate extends and be held in a flow path
Between 115a.Lid 114 and cutting part 116 include branch path 114a corresponding with flow path 115a, partition wall 116a, segmentation access
116b.In embodiment 2, in addition to above constitute, epitaxially growing equipment 101 identical with epitaxially growing equipment 1 is used.
In embodiment 3, by the branch flow passage B of epitaxially growing equipment 1, flow path 15a and the quantity for dividing access 16b from 64
Item becomes 32, makes epitaxial wafer similarly to Example 1, and measures the film thickness distribution of epitaxial wafer.Furthermore with branch
The quantity of flow path B changes, and correspondingly changes the branch of contest shape branch path 14a.
In embodiment 4, the branch flow passage B of epitaxially growing equipment 1, flow path 15a and the quantity for dividing access 16b are set as
96, in addition to this, epitaxial wafer is made similarly to Example 3, and measure the film thickness distribution of epitaxial wafer.
Comparative example
In comparative example 1, using existing epitaxially growing equipment 201 shown in Fig. 5, in addition to this, similarly to Example 1
Epitaxial wafer is made, and measures the film thickness distribution of epitaxial wafer.Hereinafter, epitaxially growing equipment 201 is concretely demonstrated.It is right
In composition identical with epitaxially growing equipment 1, using same reference numerals and omit the description.Epitaxially growing equipment 201 includes note
Enter lid 214 (hereinafter referred to as " lid 214 "), baffle BA, injection inserts 215 (hereinafter referred to as " inserts 215 ") and spacing board 216
Instead of lid 14, inserts 15 and cutting part 16.In addition, epitaxially growing equipment 201 includes column sections P.Lid 214, which has, keeps gas phase raw
Long gas imports the space (not shown) passed through when reacting furnace 2 for vapor phase growth gas.Baffle BA is to be held on lid 214 and inserts
Tabular component between 215 has and guides the vapor phase growth gas in lid 214 to multiple through hole H of inserts 215.It is logical
It crosses through hole H and adjusts the vapor phase growth gas stream towards inserts 215.Inserts 215 be formed to have arc-shaped side S1 and with
2 plates P11, P12 of S2 in S1 opposite opposite.Inserts 215 include from it is opposite while S2 towards while S1 perforation a plurality of stream
Road 215a.5 flow path 215a are respectively formed in each plate P11, P12.Each plate P11, P12 are spaced from each other gap and configure.Branch
Column portion P autoreaction furnace 2 extends towards the gap between plate P11, P12 and is held between a flow path 215a.Spacing board 216
For the tabular component for separating the gas stream from inserts 215 towards reacting furnace 2, it is configured with 4.In comparative example 1, remove more than
Other than composition, epitaxially growing equipment 201 identical with epitaxially growing equipment 1 is used.
In comparative example 2, the branch flow passage B of epitaxially growing equipment 1, flow path 15a and the quantity for dividing access 16b are set as
8, in addition to this, epitaxial wafer is made similarly to Example 3, and measure the film thickness distribution of epitaxial wafer.
In comparative example 3, the branch flow passage B of epitaxially growing equipment 1, flow path 15a and the quantity for dividing access 16b are set as
16, in addition to this, epitaxial wafer is made similarly to Example 3, and measure the film thickness distribution of epitaxial wafer.
Such as embodiment 1 and 2, the vapor phase growth gas supplied to substrate W is made to branch into 64 in contest shape and guide to base
In the case where plate W, as shown in Fig. 6 A and Fig. 6 B, the uniformity of film thickness and the deviation of film thickness are good.Specifically, film thickness is uniform
Property (%) in embodiment 1 be 0.29, in embodiment 2 be 0.39.Also, the deviation (%) of film thickness is in the two of embodiment 1 and 2
In smoothed.Corresponding thereto, such as comparative example 1, using do not make the vapor phase growth gas supplied to substrate W in contest shape branch
And in the case where the existing epitaxially growing equipment 201 guided to substrate W, as shown in Figure 6 C, the uniformity of film thickness and film thickness it is inclined
Difference is not improved.Specifically, the uniformity (%) of film thickness is 1.21, the deviation (%) of film thickness is not fully smooth
Change.
Such as comparative example 2 and 3, make the vapor phase growth gas supplied to substrate W in contest shape branch into 8,16 and guide
To substrate W, as shown in figs. 7 a and 7b, the uniformity of film thickness and the deviation of film thickness are not improved.It is specific and
Speech, the uniformity (%) of film thickness are 1.26 in comparative example 2, are 1.13 in comparative example 3.Also, the deviation (%) of film thickness in than
It is not smoothed fully compared in the two of example 2 and 3.Corresponding thereto, such as embodiment 3,1,4, keep the gas phase supplied to substrate W raw
Long gas in contest shape branch into 32,64,96 and guide in the case where substrate W, as shown in Fig. 7 C~Fig. 7 E, film thickness
Uniformity and the deviation of film thickness become good.Specifically, the uniformity (%) of film thickness is 0.41, Yu Shi in embodiment 3
Applying is 0.29 in example 1, is 0.41 in embodiment 4.Also, the deviation (%) of film thickness is able in any one of embodiment 3,1,4
Fully smooth.
Therefore, the vapor phase growth gas supplied to substrate W is made to branch into 32 or more in contest shape and guide to substrate W
When, the film thickness distribution of epitaxial wafer can be made good.Vapor phase growth gas is especially set to branch into 64 in contest shape and guide
In the case where being excluded to substrate W and by column sections P (the case where embodiment 1), most effectively the film thickness distribution of epitaxial layer can be put down
Cunningization.
More than, the embodiment of the present invention is illustrated, but the present invention is not limited to its it is specific record, can also be with
It is not constituted by illustrated by the range of bad student's contradiction technically and carries out combination appropriate and implement, alternatively, can also be by certain
One element, processing replace with well known form and implement.
Claims (8)
1. a kind of epitaxially growing equipment, which is characterized in that
Include:
Reacting furnace makes epitaxial layer vapor phase growth in substrate by unstrpped gas；
Access comprising towards the entrance in above-mentioned reacting furnace and the top positioned at above-mentioned entrance and more above-mentioned entrance is by above-mentioned
It reacts furnace side and reaches the outlet in above-mentioned reacting furnace, above-mentioned entrance is connect with above-mentioned outlet thus by above-mentioned raw materials gas
It imports in above-mentioned reacting furnace；
Rank portion is located in above-mentioned access, and extends including the 1st face with above-mentioned entrance opposite direction and from the upper end in above-mentioned 1st face
To the 2nd face of above-mentioned outlet；
A plurality of flow path extends to the outside of above-mentioned entrance from above-mentioned entrance, for by above-mentioned raw materials gas guide to it is above-mentioned enter
Mouthful, and be 32 or more；
Converging roads are that above-mentioned a plurality of flow path collaborates simultaneously from above-mentioned entrance side towards the upstream side of above-mentioned raw materials gas in contest shape
It is connected in the upstream side of above-mentioned raw materials gas；And
A plurality of segmentation access, along above-mentioned raw materials gas flowing direction and above-mentioned a plurality of flow path accordingly by above-mentioned access into
Row segmentation, and connect and communicate with above-mentioned a plurality of flow path respectively.
2. epitaxially growing equipment according to claim 1, which is characterized in that
Wherein, above-mentioned segmentation access extends via above-mentioned rank portion towards above-mentioned outlet from above-mentioned entrance.
3. epitaxially growing equipment according to claim 1 or 2, which is characterized in that
Wherein, above-mentioned a plurality of flow path adds up to 64 or more.
4. epitaxially growing equipment according to any one of claim 1 to 3, which is characterized in that
Wherein, above-mentioned a plurality of flow path is along horizontal plane configuration side by side respectively.
5. epitaxially growing equipment according to claim 4, which is characterized in that
Wherein, above-mentioned a plurality of flow path adjoins each other along above-mentioned horizontal plane.
6. epitaxially growing equipment according to claim 4, which is characterized in that
Further include: column sections extend from above-mentioned reacting furnace towards between a pair of above-mentioned flow path.
7. a kind of manufacturing method of epitaxial wafer, which is characterized in that
Include:
The step of shunting, makes outer layer growth in being in by above-mentioned raw materials gas stream in the reacting furnace of substrate directed through unstrpped gas
Contest shape splits into 32 or more；
The step of guidance, is split the shunting quantity of the above-mentioned raw materials gas for 32 or more in the step of maintaining above-mentioned shunting simultaneously
Above-mentioned raw materials gas is guided to above-mentioned reacting furnace；And
The step of growth, makes above-mentioned outer layer growth in upper using the above-mentioned raw materials gas guided by the step of above-mentioned guidance
State substrate.
8. the manufacturing method of epitaxial wafer according to claim 7, which is characterized in that
Wherein, the above-mentioned shunting the step of in above-mentioned raw materials gas stream split into 64 or more.
Applications Claiming Priority (3)
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| JP2016-172751 | 2016-09-05 | ||
| JP2016172751 | 2016-09-05 | ||
| PCT/JP2017/024821 WO2018042876A1 (en) | 2016-09-05 | 2017-07-06 | Vapor-phase growth apparatus and method for production of epitaxial wafer |
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| KR (1) | KR102357017B1 (en) |
| CN (1) | CN109661715B (en) |
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| Publication number | Publication date |
|---|---|
| JPWO2018042876A1 (en) | 2018-08-30 |
| TW201825703A (en) | 2018-07-16 |
| TWI695085B (en) | 2020-06-01 |
| JP6403106B2 (en) | 2018-10-10 |
| WO2018042876A1 (en) | 2018-03-08 |
| KR20190046826A (en) | 2019-05-07 |
| KR102357017B1 (en) | 2022-01-28 |
| CN109661715B (en) | 2023-07-28 |
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