CN109647389A - 利用Au纳米颗粒增强Ga2O3薄膜光催化降解有机污染物的方法 - Google Patents
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Abstract
利用Au纳米颗粒增强Ga2O3薄膜光催化降解有机污染物的方法属于半导体材料光催化降解有机污染物领域。本发明采用Au纳米颗粒作为Ga2O3薄膜的负载材料来增强Ga2O3材料的催化降解效率。采用直流磁控溅射法在Ga2O3薄膜上沉积一层Au膜，并通过退火的方式使Au薄膜变成Au纳米颗粒形态。本发明利用Au纳米颗粒的等离激元作用来提高Ga2O3材料降解有机污染物的降解效率。
Description
技术领域
本发明涉及一种利用Au纳米颗粒增强Ga2O3薄膜光催化降解有机污染物的方法，属于半导体材料光催化降解有机污染物领域。
背景技术
近年来，半导体光催化技术作为一种低成本、环保和可持续的处理技术，与工业废水零排放计划相结合，显示出巨大的潜力。这种先进的氧化技术已被广泛证明能够去除水中的持久性有机化合物和微生物。目前半导体光催化降解有机污染物的研究绝大部分采用的为微纳米级颗粒材料，此种材料具有较大的比表面积、较高的污染物降解效率，但是阻碍其商业化的主要技术障碍是水处理后催化剂颗粒的回收。
为了提高Ga2O3材料的催化降解效率，科研工作者对Ga2O3材料进行了贵金属负载研究。研究发现Au、Ag、Pd、Cu、Pt等均能有效提高Ga2O3材料的催化降解效率。这是由于这些金属可以增强半导体材料的电荷分离和电子传递。目前制备贵金属纳米颗粒常采用化学法，存在贵金属纳米颗粒尺寸不可控的难题。
综上所述，亟需一种可调控贵金属纳米颗粒尺寸的生长手段来提高Ga2O3材料的催化降解效率。
发明内容
本发明采用Au纳米颗粒作为Ga2O3薄膜的负载材料来增强Ga2O3材料的催化降解效率。采用直流磁控溅射法在Ga2O3薄膜上沉积一层Au膜，并通过退火的方式使Au薄膜变成Au纳米颗粒形态。利用Au纳米颗粒的等离激元作用来提高Ga2O3材料降解有机污染物的降解效率。
本发明的目的可通过如下技术流程实现：
(1)采用石英片作为Ga2O3薄膜生长的基片，对石英基片进行超声清洗。
(2)利用射频磁控溅射设备在石英基片上沉积一层Ga2O3薄膜材料。
(3)利用直流溅射设备在Ga2O3薄膜材料上生长一层Au薄膜。
(4)利用管式炉对覆盖有Au薄膜的Ga2O3薄膜材料进行热退火处理。
(5)将制备的Au纳米颗粒负载的Ga2O3薄膜应用于有机污染物降解。
与已有技术相比，本发明的特征在利用Au纳米颗粒增强了Ga2O3薄膜催化降解有机污染物的降解效率，且可通过控制直流溅射Au薄膜的时间和退火处理控制Au纳米颗粒的尺寸。
附图说明
图1为Au纳米颗粒负载Ga2O3薄膜制备流程示意图
具体实施方式
用以下实例进一步介绍本发明。
实施例1
(1)以15mm×15mm的石英片作为Ga2O3薄膜生长的基片，利用丙酮、乙醇、去离子水依次超声清洗基片，并用氮气气枪吹干基片备用。
(2)采用射频磁控溅射设备在石英基片上沉积一层Ga2O3薄膜材料。系统预真空度为5×10-4Pa。薄膜的生长气氛为Ar，工作气压为1.0Pa。Ga2O3靶材的溅射功率为80W，溅射时间为180min，获得厚度约为225nm的Ga2O3薄膜。
(3)采用直流溅射设备在Ga2O3薄膜表面进行Au薄膜生长。工作气压为4Pa，溅射时间为5秒。
(4)采用管式炉对所制备薄膜进行退火处理。本发明提供的慢退火温度为800℃，恒温时间90分钟。慢速退火保护气体使用高纯N2(纯度99.999％)。通入保护气体后，开始升温，整个退火过程持续通气。
(5)将Au纳米颗粒负载的Ga2O3薄膜放入污染物降解装置中，在紫外光照下对亚甲基蓝进行降解。
实施例2
(1)以15mm×15mm的石英片作为Ga2O3薄膜生长的基片，利用丙酮、乙醇、去离子水依次超声清洗基片，并用氮气气枪吹干基片备用。
(2)采用射频磁控溅射设备在石英基片上沉积一层Ga2O3薄膜材料。系统预真空度为5×10-4Pa。薄膜的生长气氛为Ar，工作气压为1.0Pa。Ga2O3靶材的溅射功率为80W，溅射时间为180min，获得厚度约为225nm的Ga2O3薄膜。
(3)采用直流溅射设备在Ga2O3薄膜表面进行Au薄膜生长。工作气压为4Pa，溅射时间为10秒。
(4)采用管式炉对所制备薄膜进行退火处理。本发明提供的慢退火温度为800℃，恒温时间90分钟。慢速退火保护气体使用高纯N2(纯度99.999％)。通入保护气体后，开始升温，整个退火过程持续通气。
(5)将Au纳米颗粒负载的Ga2O3薄膜放入污染物降解装置中，在紫外光照下对亚甲基蓝进行降解。
实施例3
(1)以15mm×15mm的石英片作为Ga2O3薄膜生长的基片，利用丙酮、乙醇、去离子水依次超声清洗基片，并用氮气气枪吹干基片备用。
(2)采用射频磁控溅射设备在石英基片上沉积一层Ga2O3薄膜材料。系统预真空度为5×10-4Pa。薄膜的生长气氛为Ar，工作气压为1.0Pa。Ga2O3靶材的溅射功率为80W，溅射时间为180min，获得厚度约为225nm的Ga2O3薄膜。
(3)采用直流溅射设备在Ga2O3薄膜表面进行Au薄膜生长。工作气压为4Pa，溅射时间为15秒。
(4)采用管式炉对所制备薄膜进行退火处理。本发明提供的慢退火温度为800℃，恒温时间90分钟。慢速退火保护气体使用高纯N2(纯度99.999％)。通入保护气体后，开始升温，整个退火过程持续通气。
(5)将Au纳米颗粒负载的Ga2O3薄膜放入污染物降解装置中，在紫外光照下对亚甲基蓝进行降解。
当Au溅射时间为10秒时，退火处理后Au纳米颗粒负载的Ga2O3薄膜具有最佳的催化性能，其催化效率是单纯Ga2O3薄膜的2倍。这归因于Au纳米颗粒负载有效的增强Ga2O3材料的电荷分离和电子传递。
Claims (3)
1.Au纳米颗粒增强Ga2O3薄膜的制备方法，其特征在于：
(1)采用石英片作为Ga2O3薄膜生长的基片，对石英基片进行超声清洗；
(2)利用射频磁控溅射设备在石英基片上沉积一层Ga2O3薄膜材料；
(3)利用直流溅射设备在Ga2O3薄膜材料上生长一层Au薄膜；
(4)利用管式炉对覆盖有Au薄膜的Ga2O3薄膜材料进行热退火处理。
2.根据权利要求1所述的制备方法，其特征在于：
(1)以石英片作为Ga2O3薄膜生长的基片，超声清洗基片，并用氮气气枪吹干基片备用；
(2)采用射频磁控溅射设备在石英基片上沉积一层Ga2O3薄膜材料；系统预真空度为5×10-4Pa；薄膜的生长气氛为Ar，工作气压为1.0Pa；Ga2O3靶材的溅射功率为80W，溅射时间为180min，获得Ga2O3薄膜；
(3)采用直流溅射设备在Ga2O3薄膜表面进行Au薄膜生长；工作气压为4Pa，溅射时间为5秒；
(4)采用管式炉对所制备薄膜进行退火处理；退火温度为800℃，恒温时间90分钟，使用N2作为保护气体，整个退火过程持续通气。
3.应用权利要求1或2所述方法所制备的Au纳米颗粒增强Ga2O3薄膜应用于有机污染物降解。
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| CN110776048A (zh) * | 2019-11-13 | 2020-02-11 | 上海理工大学 | 一种小型串联填料式反应装置的设计 |
| CN110787798A (zh) * | 2019-10-29 | 2020-02-14 | 天津大学 | 一种利用Au纳米颗粒增强光催化性的Ga2O3薄膜制备方法 |
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