CN109644307A - 麦克风和压力传感器封装件以及制造麦克风和压力传感器封装件的方法 - Google Patents

麦克风和压力传感器封装件以及制造麦克风和压力传感器封装件的方法 Download PDF

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CN109644307A
CN109644307A CN201780038156.0A CN201780038156A CN109644307A CN 109644307 A CN109644307 A CN 109644307A CN 201780038156 A CN201780038156 A CN 201780038156A CN 109644307 A CN109644307 A CN 109644307A
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microphone
pressure sensor
sensor package
package part
asic
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CN109644307B (zh
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威廉·弗雷德里克·阿德里亚努斯·贝斯林
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Sciosense BV
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Abstract

麦克风和压力传感器封装件包括具有开口(16)的载体(1)、包括布置在开口(16)上方的隔膜(21)和穿孔背板(22)的麦克风器件(20)、ASIC器件(6)以及形成载体(1)和罩(9)之间的空腔(17)的罩(9)。ASIC器件(6)和麦克风器件(20)布置在空腔(17)中。提供用于压力传感器的传感器元件(7)集成在ASIC器件(6)中。空腔(17)外部的压力通过开口(16)、隔膜(21)和背板(22)传输至传感器元件(7)。

Description

麦克风和压力传感器封装件以及制造麦克风和压力传感器封 装件的方法
本发明涉及一种紧凑型封装件，其适于集成用于检测外界平均压力的压力传感器与被用作检测如声波的快速压力变化的麦克风的微机电系统。该封装件允许压力传感器与作用在该封装件上的外力所导致的压力的机械去耦。
WO 2002/048668 A2公开了一种集成CMOS电容压力传感器。
US 2016/0142829 A1公开了一种包括封装衬底的MEMS麦克风，所述封装衬底具有穿过该封装衬底布置的端口，其中该端口被配置为接收声波；安装至封装衬底并且形成封装件的盖。该MEMS麦克风还包括布置在封装件中并且耦合至封装衬底的声音传感器，其中MEMS声音传感器被定位成使得能够可在端口处接收的声波入射在该MEMS声音传感器上。该MESM声音传感器包括：定位在该封装件内的第一位置处的在端口上方的背板；和定位在该封装件内的第二位置处的隔膜，其中该第一位置和第二位置之间的距离形成限定感测间隙，并且其中该MEMS麦克风被设计成承受隔膜和背板之间大于或等于约15伏的偏置电压。
本发明的目的是公开一种紧凑型麦克风和压力传感器封装件以及制造这种麦克风和压力传感器封装件的方法。
该目的通过根据权利要求1的麦克风和压力传感器封装件以及通过根据权利要求15的制造麦克风和压力传感器封装件的方法来实现。实施例和变体源自从属权利要求。
麦克风和压力传感器封装件包括具有开口的载体、布置在该开口上方的具有隔膜和穿孔背板的麦克风器件、ASIC器件以及罩，该罩形成位于载体与罩之间的空腔。ASIC器件和麦克风器件布置在该空腔中。被设置用作压力传感器的传感器元件集成在ASIC器件中，特别是单片集成在ASIC器件中。存在于空腔外部的压力通过开口、隔膜和背板传输至传感器元件。该封装件因此可以仅包括两个半导体管芯或芯片以包括ASIC、传感器元件和麦克风。
在麦克风和压力传感器封装件的实施例中，ASIC器件通过粘合剂层安装在载体上。
麦克风和压力传感器封装件的另一实施例包括底部器件，该底部器件尤其可以包括绝缘体或玻璃，或者半导体材料。底部器件固定在载体和ASIC器件之间。底部器件尤其可以包括电惰性半导体衬底。
在另外的实施例中，底部器件包括与麦克风器件电连接的另外的ASIC器件。
另外的实施例包括底部器件和ASIC器件之间的粘合剂层，该粘合剂层包括硅树脂。
在另外的实施例中，ASIC器件横向悬伸出底部器件至少100μm。
在另外的实施例中，ASIC器件与麦克风器件电连接。特别地，ASIC器件可以被设置用于传感器元件和麦克风器件的读出。
另外的实施例包括布置在载体中的电导体，并且ASIC器件与该电导体电连接。
在另外的实施例中，麦克风器件与电导体电连接。
在另外的实施例中，AISC器件以倒装芯片技术安装到载体。
另外的实施例包括穿透隔膜的一个孔或多个孔。
制造麦克风和压力传感器封装件的方法包括：提供具有开口的载体；在该开口的上方布置包括隔膜和穿孔背板的麦克风器件；为ASIC器件提供被设置用作压力传感器的集成传感器元件；将ASIC器件固定在载体上；并且将罩施加到载体，使得罩形成位于载体和罩之间的空腔，并且ASIC器件和麦克风器件布置在该空腔中。
在该方法的变体中，将底部器件固定在载体和ASIC器件之间。
在该方法另外的变体中，将包括硅树脂的粘合剂层布置在底部器件和ASIC器件之间。
在该方法另外的变体中，为载体提供电导体，并且麦克风、底部器件和ASIC器件中的至少一个与该电导体电连接。
在该方法另外的变体中，形成包括键合线的电连接件，该电连接件对麦克风、底部器件和ASIC器件中的至少一个进行电连接。
在该方法另外的变体中，隔膜设置有穿透该隔膜的一个孔或多个孔，特别地以实现低通滤波功能。
以下是结合附图对麦克风和压力传感器封装件以及制造方法的示例的详细描述。
图1是在底部器件上具有ASIC器件的麦克风和压力传感器封装件的横截面图。
图2是根据图1的麦克风和压力传感器封装件的内部部分的俯视图。
图3是根据图1的针对具有不同连接的另外的麦克风和压力传感器封装件的横截面图。
图4是根据图3的麦克风和压力传感器封装件的内部部分的俯视图。
图5是根据图1的针对包括ASIC器件的悬伸部分的另外的麦克风和压力传感器封装件的横截面图。
图6是根据图1的针对没有底部器件的另外的麦克风和压力传感器封装件的横截面图。
图7是根据图1的针对在底部器件的上表面上具有电接触点的另外的麦克风和压力传感器封装件的横截面图。
图8是根据图7的麦克风和压力传感器封装件的内部部分的俯视图。
图9是根据图7的另外的麦克风和压力传感器封装件的内部部分的俯视图。
图1是麦克风和压力传感器封装件的横截面图，其包括具有开口16的载体1以及可选的集成电导体13。可选堆叠包括载体1的顶表面10上的底垫2、底垫2上的键合层3、以及键合层3上的底部器件4。粘合剂层5被施加于底部器件4上。粘合剂层5可以替代地被直接施加于载体1的顶表面10上。具有集成的、尤其是单片集成的传感器元件7或传感器元件7的阵列的ASIC器件6布置在粘合剂层5上。包括隔膜21和背板22的麦克风器件20布置在开口16的上方。在ASIC器件6和载体1的顶表面10上的接触垫14之间以及在ASIC器件6和麦克风器件20之间设置电连接件。罩9施加于顶面10上，使得在载体1和罩9之间形成空腔17。ASIC器件6和麦克风器件20容纳在空腔17中。只要在该封装件中存在ASIC器件6和麦克风器件20作为包括有源部件的半导体管芯或芯片，就足够了。用于外部电连接的端子接触件12可以形成在载体1的与顶表面10相对的后表面11上。端子接触件12连接至集成电导体13。
例如，载体1可以是印刷电路板，尤其是层压板。例如，载体1的后表面11上的端子接触12可以以触点阵列封装的形状来形成。集成电导体13可以提供布线或再分布。底部器件4可以包括半导体材料，其尤其可以是硅。
底部器件4尤其可以被用于ASIC器件6与载体1的机械去耦。在这种情况下，底部器件4例如可以是绝缘体或玻璃材料或者半导体材料。底部器件4的热膨胀系数可以与ASIC器件6的热膨胀系数相匹配。底部器件4尤其可以包括电惰性半导体衬底、虚设管芯或内插器。因此可以防止可能由作用于该麦克风和压力传感器封装件上的外力所导致的形变对集成在ASIC器件6中的传感器元件7或传感器元件7的阵列造成不利影响。底部器件4可以替代地为另外的ASIC器件。
用于电气和/或防护的目的可以设置可选的底垫2。也可以在载体1中集成防护物，尤其是在载体1是多层载体的情况下。如果使用倒装芯片技术来固定底部器件4，则底垫2可以是特别有利的。在这种情况下，键合层3可以替代地是常规的键合或焊接层。例如，键合层3可以替代地为管芯附着箔。
粘合剂层5尤其可以包括硅树脂，即通过聚合硅氧烷所获得的聚合物。可以像胶那样施加硅树脂，以将ASIC器件6固定至底部器件4或者直接固定至载体1的顶表面10。可以通过选择粘合剂层5的适当的厚度来增强ASIC器件与底部器件4的机械去耦。
例如，ASIC器件6可以是CMOS器件。传感器元件7可以是任何传统的压力传感器或者压力传感器的阵列，其例如可以实现为微机电系统。压力传感器尤其可以被设置用于电容或压阻式读出。ASIC器件6尤其可以被设置用于传感器元件7的读出。ASIC器件6还可以被设置用于麦克风器件20的读出，尤其是用于传感器元件7和麦克风器件20的读出。
如果ASIC器件6具有比底部器件4大的横向尺寸，使得可以至少在ASIC器件6的一个横向侧面或边缘上形成横向悬伸部分15，则改善了ASIC器件6与载体1的机械去耦。悬伸部分15可以明显大于图1中所示的悬伸部分15。在空腔17内部，载体1的顶表面10上的接触垫14和ASIC器件6之间的电连接件8例如可以是如图1所示的键合线。
麦克风器件20例如可以是微机电系统。麦克风器件20具有薄膜或隔膜21，其被暴露于环境介质，尤其是例如环境空气中。如声波之类的压力变化导致隔膜21的对应的振动。背板22可以提供对麦克风器件20的机械支撑。如果背板22是导电的(尤其是包括金属或半导体材料)并且隔膜21是导电的，则背板22可以用作测量隔膜21和背板22之间的电容的电极。该电容根据隔膜21的振动而变化。因此可以评估该电容的变化从而计算出振动的频率。隔膜21的振动由集成电路来检测和评估。该电路可以集成在麦克风器件20中，在ASIC器件6中，或者部分在麦克风器件20中和ASIC器件6中。ASIC器件6和麦克风器件20之间的电互连件8例如可以是如图1所示的键合线。
罩9可以包括金属盖。麦克风封装件通常需要与环境完全隔绝的一定的后部空间。因此，罩9可以气密地密封空腔17。
如图1所示，隔膜21可以通过开口16暴露于环境或环境介质。隔膜21被包括至少一个小孔25或通道的开口所穿透，以平衡空腔17和环境之间的压力。隔膜21的开口足够小，使得麦克风的功能和敏感度不会受到不利影响。空腔17和环境之间的压力缓解的时段比比声波的频率长。对于非常快的压力脉冲而言，隔膜21中的开口将开始充当能够被用来过滤掉不期望的信号的低通滤波器。特别地，开口的适当尺寸允许过滤掉诸如由于用力关门所导致的压力脉冲之类的物理干扰。
背板22通常被设置有允许通向空腔17的孔或通道，并且尤其可以被大量穿孔从而避免压力变化所导致的任何位移。隔膜21和背板22的布置可以颠倒。在这种情况下，背板22中的通道或穿孔允许通向隔膜21。
图2是根据图1的麦克风和压力传感器封装件的内部部分的俯视图。电连接件8施加于载体1的顶表面10上的接触垫14上以及ASIC设备6的接触区域18和麦克风器件20的另外接触区域19上。例如，接触区域18、19可以是布线的最上面的金属化层的未覆盖的表面区域或者接触垫。电连接件8在该示例中是键合线。接触垫14和接触区域18、19的数量和布置可以根据具体需求而有所变化。传感器元件7或者传感器元件7的阵列可以布置在ASIC器件6的中心处或ASIC器件6的中心附近(如图2中所示的示例)，或者在ASIC器件6的外围附近。图2示意性示出了背板22的通道或穿孔24以及隔膜21的孔25的位置。
图3是根据图1的针对具有不同连接的另外的麦克风和压力传感器封装件的横截面图。根据图3的麦克风和压力传感器封装件的与根据图1的麦克风和压力传感器封装件的对应元件相似的元件指定以相同的附图标记。在根据图3的麦克风和压力传感器封装件中，可选的底部器件4通过倒装芯片技术固定到多个底垫2。底部器件4可以是另外的ASIC器件，其因此可以电连接至集成在载体1中的电导体13。作为替代，底部器件4可以是以类似方式固定的虚设管芯或内插器。在图3所示的示例中，电连接件8由键合线提供，其将ASIC器件6和麦克风器件20的接触区域与载体1的顶表面10上的接触垫14进行连接。因此，ASIC器件6和麦克风器件20之间的电连接经由集成在载体1中的电导体13提供。作为替代，ASIC器件6和麦克风器件20之间的电连接可以如图1所示的来提供。只要在麦克风和压力传感器封装件中存在这两种器件作为包括有源部件的两个半导体管芯或芯片，就足够了。
图4是根据图3的麦克风和压力传感器封装件的内部部分的俯视图。在该示例中为键合线的电连接件8使ASIC器件6的接触区域18与载体1的顶表面10上的接触垫14电连接，并且还使麦克风器件20的另外接触区域19与载体1的顶表面10上的另外接触垫14电连接。例如，接触区域18、19可以是接触垫或者布线的最上面的金属化层的未被覆盖的表面区域。接触垫14和接触区域18、19的数量和布置可以根据具体需求而变化。传感器元件7或者传感器元件7的阵列可以布置在ASIC器件6的中心处或ASIC器件6的中心附近(如图4中所示的示例)，或者在ASIC器件6的外围附近。
图5是根据图3的针对包括ASIC器件6的更大悬伸部分15的另外的麦克风和压力传感器封装件的横截面图。根据图5的麦克风和压力传感器封装件的与根据图3的麦克风和压力传感器封装的相应元件相似的元件指定以相同的附图标记。在根据图5的麦克风和压力传感器封装件中，相对较大的悬伸部分15允许传感器元件7或者传感器元件7的阵列朝向ASIC器件6中未被包括可选底部器件4的堆叠所支撑的部分移位。这样的布置可以增强传感器元件7或者传感器元件7的阵列与载体1的机械去耦。
图6是根据图1的针对没有底部器件的另外的麦克风和压力传感器封装件的横截面图。根据图1的麦克风和压力传感器封装的与根据图6的麦克风和压力传感器封装的相应元件相似的元件指定以相同的附图标记。在根据图6的麦克风和压力传感器封装件中，在ASIC器件6下部并没有底部器件。例如可以是硅树脂的粘合剂层5直接施加于空腔17内的载体1的顶表面10上。如果粘合剂层5足够厚，则ASIC器件6与载体1的机械去耦被增强。在这方面，如果粘合剂层5的厚度大于80μm，则可以是有利的。此外，如果ASIC器件6的厚度大于约300μm，则可以是有利的。
图7是根据图1的针对在底部器件的上表面上具有电接触点的另外的麦克风和压力传感器封装件的横截面图。根据图1的麦克风和压力传感器封装的与根据图7的麦克风和压力传感器封装的相应元件相似的元件指定以相同的附图标记。在根据图7的麦克风和压力传感器封装件中，底部器件4的至少一个横向尺寸大于ASIC器件6的相对应横向尺寸。因此，底部器件4的上表面并未完全被ASIC器件所覆盖。因此，如图7所示，可以在设置在底部器件4的上表面处的接触区域上施加电连接件8，特别是键合线。如果底部器件4是具有集成电路的另外的ASIC器件，则这是合适的。
在图7所示的示例中，底部器件4和ASIC器件6与载体1的顶表面10上的接触垫14电连接，并且麦克风器件20与底部器件4电连接，该底部器件4被提供用于评估来自麦克风器件10的信号。还可以在麦克风器件20与ASIC器件6之间、在麦克风器件20与载体1的顶表面10上的接触垫14之间或者在底部器件4与ASIC器件6之间提供电连接。因此，可以以各种方式在底部器件4、ASIC器件6和麦克风器件20之间来划分电路。
图8是根据图7的麦克风和压力传感器封装件的内部部分的俯视图。在该示例中为键合线的电连接件8施加于载体1的顶表面10上的接触垫14上、ASIC器件6的接触区域18上、麦克风器件20的另外的接触区域19上以及底部器件4的另外的接触区域23上。接触区域18、19、23可以是布线的最上面的金属化层级中未被覆盖的表面区域或者接触垫。接触垫14和接触区域18、19、23的数量和布置可以根据具体需求而变化。传感器元件7或者传感器元件7的阵列可以布置在ASIC器件6的中心处或ASIC器件6的中心附近(如图8中所示的示例)，或者在ASIC器件6的外围附近。
图9是根据图8的用于包括ASIC器件6的更大悬伸部分15的另外实施例的俯视图。如图9所示，传感器元件7或者传感器元件7的阵列可以布置在ASIC器件6的外围附近，以便增强与底部器件4和载体1的机械去耦。
可以通过以下方式来制造麦克风和压力传感器封装件：在载体中的开口的上方布置麦克风器件；将具有集成的压力传感器的ASIC器件固定在载体上；并且向载体施加罩，使得罩形成位于载体和该罩之间的空腔，该空腔容纳ASIC器件和麦克风器件。ASIC器件和麦克风器件可以是该麦克风和压力传感器封装件中仅有的作为包括有源部件的半导体管芯或芯片的器件。
该可选的底部器件可以使用管芯附着箔或芯片倒装技术进行固定。包括硅树脂的粘合剂层可以像胶一样施加在底部器件和ASIC器件之间。该载体可以被提供有电导体、接触垫和后端接触件，并且器件可以通过键合线彼此电连接或者与载体的接触垫电连接。
压力传感器因此可以直接集成在CMOS读出电路的顶端上。电容压力传感器是尤其有利的，因为其功耗比压阻式压力传感器中的功耗低五至十倍。由于直接集成在CMOS器件的顶端上，所以不存在寄生耦合。这降低了对电磁干扰和相对湿度的敏感度并且减小了总电容，因此是有益的。
该特征允许将具有可选的压力、温度和麦克风读出功能的单个ASIC器件布置在封装件内。将压力传感器集成在单个管芯上增加了空腔的剩余空间，并种空隙的增加也是有益的。
该麦克风和压力传感器封装件提供了一种麦克风和压力传感器的紧凑型组合，获得了改进的性能。麦克风器件尤其可以是传统的微机电系统。将压力传感器集成在包括用于操作压力传感器并评估所获得的信号的集成电路(如CMOS电路)的ASIC器件中，使得可以减小封装件的整体尺寸。通过将具有集成压力传感器的ASIC器件布置在包括底部器件的堆叠上，增强了压力传感器与载体的机械去耦，其中所述底部器件尤其可以是电惰性的虚设管芯或插入器。压力传感器可以布置在ASIC器件的悬伸部分中，以进一步减小压力。
参考数字列表
1 载体
2 底垫
3 键合层
4 底部器件
5 粘合剂层
6 ASIC器件
7 传感器元件
8 电连接件
9 罩
10 顶表面
11 后表面
12 端子接触件
13 电导体
14 接触垫
15 悬伸部分
16 开口
17 空腔
18 接触区域
19 另外的接触区域
20 麦克风器件
21 隔膜
22 背板
23 另外的接触区域
24 通道
25 孔

Claims (20)

1.一种麦克风和压力传感器封装件，包括：
-具有开口(16)的载体(1)，
-布置在开口(16)上方的麦克风器件(20)，其包括隔膜(21)和穿孔的背板(22)，
-ASIC器件(6)，和
-罩(9)，其形成位于载体(1)和该罩(9)之间的空腔(17)，所述ASIC器件(6)和麦克风器件(20)布置在该空腔(17)中，
其特征在于
-被设置用作压力传感器的传感器元件(7)集成在ASIC器件(6)中，并且
-空腔(17)外部的压力通过开口(16)、隔膜(21)和背板(22)传输至传感器元件(7)。
2.根据权利要求1所述的麦克风和压力传感器封装件，其中，ASIC器件(6)通过粘合剂层(5)安装在载体(1)上。
3.根据权利要求1所述的麦克风和压力传感器封装件，所述麦克风和压力传感器封装件还包括：
底部器件(4)，该底部器件(4)被固定在载体(1)和ASIC器件(6)之间。
4.根据权利要求3所述的麦克风和压力传感器封装件，其中，底部器件(4)包括绝缘体或玻璃。
5.根据权利要求3所述的麦克风和压力传感器封装件，其中，底部器件(4)包括电惰性半导体衬底。
6.根据权利要求3所述的麦克风和压力传感器封装件，其中，底部器件(4)包括与麦克风器件(20)电连接的另外的ASIC器件。
7.根据权利要求3至6中任一项所述的麦克风和压力传感器封装件，所述麦克风和压力传感器封装件还包括位于底部器件(4)和所述ASIC器件(6)之间的粘合剂层(5)，该粘合剂层(5)包括硅树脂。
8.根据权利要求3至7中任一项所述的麦克风和压力传感器封装件，其中，所述ASIC器件(6)横向悬伸出底部器件(4)至少100μm。
9.根据权利要求1至8中任一项所述的麦克风和压力传感器封装件，其中，所述ASIC器件(6)与麦克风器件(20)电连接。
10.根据权利要求9所述的麦克风和压力传感器封装件，其中，所述ASIC器件(6)设置用于传感器元件(7)和麦克风器件(20)的读出。
11.根据权利要求1至10中任一项所述的麦克风和压力传感器封装件，所述麦克风和压力传感器封装件还包括：
布置在载体(1)中的电导体(13)，所述ASIC器件(6)与电导体(13)电连接。
12.根据权利要求11所述的麦克风和压力传感器封装件，其中，麦克风器件(20)与电导体(13)电连接。
13.根据权利要求11或12所述的麦克风和压力传感器封装件，其中，所述AISC器件(6)通过倒装芯片技术安装到载体(1)。
14.根据权利要求1至13中任一项所述的麦克风和压力传感器封装件，所述麦克风和压力传感器封装件还包括穿透隔膜(21)的一个孔(25)或多个孔(25)。
15.一种制造麦克风和压力传感器封装件的方法，包括：
-提供具有开口(16)的载体(1)，
-在开口(16)上方布置包括隔膜(21)和穿孔背板(22)的麦克风器件(20)，
-提供具有被设置为压力传感器的集成传感器元件(7)的ASIC器件(6)，
-将ASIC器件(6)固定在载体(1)上，并且
-向载体(1)施加罩(9)，该罩(9)形成位于载体(1)和罩(9)之间的空腔(17)，ASIC器件(6)和麦克风器件(20)布置在该空腔(17)中。
16.根据权利要求15所述的方法，所述方法还包括：
提供底部器件(4)，并且
将该底部器件(4)固定在载体(1)和ASIC器件(6)之间。
17.根据权利要求15或16所述的方法，所述方法还包括：
将包括硅树脂的粘合剂层(5)布置在底部器件(4)和ASIC器件(6)之间。
18.根据权利要求15至17中任一项所述的方法，所述方法还包括：
为载体(1)提供电导体(13)，并且
将选自麦克风器件(20)、底部器件(4)和ASIC器件(6)中的至少一个器件与电导体(13)电连接。
19.根据权利要求15至18中任一项所述的方法，所述方法还包括：
形成包括键合线的电连接件(8)，该电连接件(8)对选自麦克风器件(20)、底部器件(4)和ASIC器件(6)中的至少一个器件进行电连接。
20.根据权利要求15至19中任一项所述的方法，所述方法还包括：
为隔膜(21)提供穿透隔膜(21)的一个孔(25)或多个孔(25)以实现低通滤波功能。
CN201780038156.0A 2016-06-21 2017-06-14 麦克风和压力传感器封装件以及制造麦克风和压力传感器封装件的方法 Active CN109644307B (zh)

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