CN109642313A - High-precision shadow mask deposition system and method - Google Patents
High-precision shadow mask deposition system and method Download PDFInfo
- Publication number
- CN109642313A CN109642313A CN201780040228.5A CN201780040228A CN109642313A CN 109642313 A CN109642313 A CN 109642313A CN 201780040228 A CN201780040228 A CN 201780040228A CN 109642313 A CN109642313 A CN 109642313A
- Authority
- CN
- China
- Prior art keywords
- substrate
- source
- collimator
- angular region
- vaporization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008021 deposition Effects 0.000 title claims abstract description 76
- 238000000034 method Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims abstract description 103
- 239000000463 material Substances 0.000 claims abstract description 77
- 230000008016 vaporization Effects 0.000 claims description 62
- 238000009834 vaporization Methods 0.000 claims description 61
- 239000011368 organic material Substances 0.000 claims description 6
- 238000001914 filtration Methods 0.000 claims description 5
- 239000004744 fabric Substances 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims 2
- 230000001902 propagating effect Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 abstract description 9
- 230000008020 evaporation Effects 0.000 abstract description 9
- 238000000059 patterning Methods 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 description 70
- 238000010586 diagram Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 229920001621 AMOLED Polymers 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 230000000644 propagated effect Effects 0.000 description 3
- 238000007665 sagging Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
A direct deposition system capable of forming high resolution material patterns on a substrate is disclosed. Vaporized atoms from an evaporation source are passed through a pattern of apertures of a shadow mask to deposit on the substrate in a desired pattern. Before reaching the shadow mask, the vaporized atoms pass through a collimator that operates as a spatial filter that blocks any atoms that do not travel in a direction nearly perpendicular to the substrate surface. Thus, the vaporized atoms passing through the shadow mask exhibit little or no lateral spreading (i.e., feathering) after passing through their apertures, and the material is deposited on the substrate in a pattern with very high fidelity to the aperture pattern of the shadow mask. Accordingly, the present invention alleviates the need for relatively large spaces between regions of deposited material, as is typically required in the prior art, thereby enabling high resolution patterning.
Description
The statement of related case
In No. 62/340,793 U.S. provisional patent application cases (generation of Serial No. filed on May 24th, 2016, is advocated in this case
Manage file number: 6494-208PR1) priority, the application case is incorporated herein by reference.
Technical field
The present invention relates generally to film depositions, and more particularly, and the present invention relates to the film depositions based on vapor deposition.
Background technique
It is to make deposition materials in deposition process sheet on the surface for deposit a material to substrate based on the deposition for covering shady mask
According to expectation come patterned process during body.This commonly referred to as " directly patterns " patterned layer of material.
Covered in shady mask deposition event in typical case, with substrate source at some distance away at vaporize wanted material.With
The vaporization atom of material advance towards substrate, shady mask must be covered by being positioned at the front of substrate surface.Cover shade
Mask contains opening (that is, hole), and the arrangement of institute's desirable pattern of the material on arrangement matching substrate is (to be similar to silk screen or skill
The mode of art template).Therefore, vaporization atom is only deposited on substrate surface by hole.
For many years, it is used to patterns of material being deposited on lining in integrated circuit (IC) industry based on the deposition for covering shady mask
On bottom, this is partly due to it and avoids the need for the fact that pattern the material layer after deposition materials layer.Therefore, it uses
It is not necessary that deposition materials are exposed to harmful chemical (such as acidic etchant, causticity photoetching development chemical substance and its similar
Person) it is patterned.In addition, it, which is used, also reduces disposition and extra process amount that substrate must be subjected to, lining can be reduced whereby
Bottom damage and raising manufacturing yield.For many materials of such as organic material, the patterning by covering shady mask is actually
It is essential, this is because material is not amenable to lithographic chemical substance.
Unfortunately, the feature resolution that can be obtained by covering shady masked-deposition can be intended to by covering because of deposition materials
The fact that deflection dispersion (referred to as " sprouting wings (feathering) ") reduce after shady mask.Therefore, key feature must pass through
Relatively large open spaces region between it separates.In numerous applications, this has limited obtainable single unit system and has differentiated
The density of rate.
It shines for example, active-matrix Organic Light Emitting Diode (AMOLED) display needs deposit it based on shady mask is covered
Material, this is because these materials are not amenable to photoetching or etching.For panchromatic displayer, each display pixel includes
Several regions of each spontaneous emission different color, referred to as " sub-pixel " of luminescent material.However, due to emergence problem, it is necessary to
It is non-overlapping in deposition materials to ensure comprising relatively large margin of safety gap between these subpixel areas.In some cases
In, these gaps must be almost equally big with sub-pixel itself, this introduces non-wanted optics artifact, especially when in nearly eye application
In (such as head-mounted display) when viewing.Therefore, the displayer of the prior art has usually been limited to per inch about 600
A pixel (ppi) or smaller, this should be used to say that many comprising nearly eye augmented reality and virtual reality applications insufficient.Separately
Outside, need wide arc gap that the pixel filling factor is caused to reduce between sub-pixel, this reduces display brightness.Pass through therefore, it is necessary to increase
The current density of organic layer provides wanted brightness, this can shorten display life.
Alternative is to cover shady mask using with hole big as the active area of display itself come across whole
A display deposition emits monolithic white light organic layer and then patterns or be deposited on OLED for red, green and blue electric-wave filter
Top on.These chromatic filters absorb in addition to the red of spectrum, green or blue portion (depending on chromatic filter)
Whole transmitting white lights, to allow to generate full-colour image.However, these chromatic filters absorb up to 80% transmitting light, this
It is substantially reduced display brightness, to needed again to be higher than wanted driving current and operate.
In the prior art, do not meet yet to the process for being suitable for directly being patterned in high-resolution patterns of material on substrate
Needs.
Summary of the invention
The present invention realizes the high-resolution Direct precipitation of the patterned material layer on substrate.The embodiment of the present invention will vaporize
The angle of propagation of atom is filtered into the close limit in the direction around the surface perpendicular to substrate.Therefore, mitigate the feature for covering shady mask
Lateral dimension outside deposition materials emergence.The embodiment of the present invention is particularly suitable for deposition such as luminous organic material
Sensitive material.Embodiment be also very suitable for depositing encapsulation application, integrated circuit processing apply and so in other films
And thick film layers.
Illustrative embodiments of the invention is a kind of direct patterned deposition system, and wherein material is vaporized in Yuan Chu, is made
It obtains on the surface that it is deposited on substrate after the pattern of apertures by covering shady mask.The vaporization atom covers described in reaching at it
Pass through collimator before shady mask, the collimator stops except the propagation with the direction for being nearly perpendicular to the substrate surface
Outer whole vaporization atoms of the vaporization atom at angle.Therefore, compared with prior art, hole and its correspondingly deposited material area it
Between lateral deviation be reduced.
The collimator include with Gao Gaokuan aspect ratio multiple channels, wherein the longitudinal axis in the channel generally with hang down
Histogram is to alignment.Therefore, do not stopped along the vaporization atom advanced close to vertical direction by the inner sidewall in the channel.
In some embodiments, the source is set size and arrangement to provide the taper steam plumage (vapor of vaporization atom
Plume), so that the entire substrate surface receives evaporation of materials simultaneously.In several persons in these embodiments, moved along path
The source is moved, so that the uniformity of the thickness of the deposition materials on the 2 dimensional region of the substrate surface is improved.
In some embodiments, the source is the linear sources for emitting fan-shaped steam plumage, wherein the linear sources along not with its
The direction of longitudinal axis alignment is mobile.In several persons in these embodiments, along be generally orthogonal to the source the longitudinal axis and
The mobile source in the direction of both vertical direction.In several persons in these embodiments, institute is moved along nonlinear path
State source.
In some embodiments, the source includes multiple individual nozzles, and each of these person emits taper steam plumage, so that
The nozzle provides the substantial uniform vaporization atomic current on the region of the substrate surface jointly.
In some embodiments, the source is two-dimensional surface source, is arranged into and is parallel to and towards the substrate, so that
Flat surfaces of the organic material when being heated across the source equably vaporize.In some embodiments, the source and institute are provided
State the thickness uniformity for covering the deposition materials on 2 dimensional region of the relative motion between shady mask to improve the substrate surface.
The embodiment of the present invention is a kind of multiple deposition positions for the first material to be deposited in the deposition region of substrate
System on point, the multiple deposition site are arranged to the first arrangement, wherein the system comprises: source is used to provide the described
More than the first of first material vaporization atom, each of more than described first vaporization atom is propagated along the direction of propagation, described
The direction of propagation is characterized by relative to the angle of propagation of the first direction perpendicular to the first plane defined by the substrate, wherein institute
State the first angular region of angle of propagation range spans of more than first vaporization atom；Cover shady mask comprising be arranged to first cloth
The multiple holes set；And collimator comprising multiple channels, the collimator between the source and it is described cover between shady mask,
Wherein each of the multiple channel is set size and arrangement only to make with second less than first angular region
The vaporization atom of angle of propagation in angular region passes through.
Another embodiment of the present invention is a kind of multiple heavy in the deposition region of substrate for the first material to be deposited on
System on product site, the multiple deposition site is arranged to the first arrangement, wherein the system comprises source, can operate with
Multiple vaporization atoms are provided, each of the multiple vaporization atom is advanced along the direction of propagation for defining angle of propagation, wherein institute
Multiple angle of propagation are stated across the first angular region；Cover shady mask comprising be arranged to multiple holes of first arrangement, wherein institute
It states and covers shady mask and the multiple deposition site defines the acceptable angular region less than first angular region jointly；And collimation
Device, be positioned at the source and it is described cover between shady mask, the collimator includes multiple channels, every in the multiple channel
One has the wide aspect ratio of the height for defining the filtering angular region less than or equal to the acceptable angular region.
Another embodiment of the present invention is a kind of to be arranged to the first arrangement on substrate for the first material to be deposited on
Method on multiple deposition sites, the method comprise the steps that receiving more than first vaporization atoms, the collimation at collimator
Device is positioned at source and covering between shady mask with the multiple holes for being arranged to first arrangement, wherein a vapour more than described first
Change atom characterized by first propagates angular region；With making more than second vaporization atoms through the collimator described in
Shady mask is covered, wherein more than described second vaporization atom is spy to be narrower than described first to propagate the second of angular region to propagate angular region
Sign；And at least several persons in more than described second vaporization atom is enable to be deposited on the substrate by the multiple hole
On.
Detailed description of the invention
Fig. 1 describes the schematic diagram of the cross section of the main feature of direct patterned deposition system according to prior art.
Fig. 2 describes the main feature of the direct patterned deposition system of high accurancy and precision of illustrative embodiments according to the present invention
Cross section schematic diagram.
Fig. 3 describes the behaviour of the method for being deposited on direct patterned material layer on substrate according to illustrative embodiments
Make.
Fig. 4 describes the pixel region of substrate 102 and covers the schematic diagram of its enlarged drawing for corresponding to hole 120 of shady mask 106.
Fig. 5 A describes the schematic diagram of the cross-sectional view of the collimator according to illustrative embodiments.
Fig. 5 B to C describes the top view in the region of collimator 208 and the schematic diagram of sectional view respectively.
Specific embodiment
Fig. 1 describes the schematic diagram of the cross section of the main feature of direct patterned deposition system according to prior art.System
System 100 is conventional deposition system, covers shady mask for wanted material figure by being positioned in front of substrate by evaporation material
Case is deposited on substrate.System 100 includes the source 104 being arranged in the (not shown) of low-voltage vacuum room and covers shady mask 106.
Substrate 102 is adapted for forming the glass substrate of active-matrix Organic Light Emitting Diode (AMOLED) display.Substrate
102 surfaces 114 comprising defining plane 108 and vertical axis 110.Vertical axis 110 is orthogonal to plane 108.Surface 114 includes to be used for
It receives the multiple deposition site G for emitting the material of green light, multiple deposition site B of the material for receiving transmitting blue light and is used for
Receive multiple deposition site R of the material of transmitting feux rouges.Deposition site is arranged in multiple pixel regions 112, so that each picture
Plain region includes the deposition site of the luminescent material for each color.
Source 104 is the crucible for vaporizing material 116, placed in the middle relative to substrate 102, and material 116 is that transmitting is red
The luminous organic material of light.When material 116 is melted or distilled in the low pressure atmosphere of vacuum chamber, vaporization atom is projected in source 104
122, vaporization atom 122 is propagated in a manner of the trajectory generally toward substrate 102 from source outward.The vaporization projected by source 104 is former
Son defines steam plumage 124 jointly.
Covering shady mask 106 is the structural wood flitch comprising hole 120.Shady mask is covered generally to be flat and define plane
118.Shady mask alignment is covered between source 104 and substrate 102, so that its blocking is complete in addition to the vaporization atom by its hole
Portion's vaporization atom passes through.Shady mask and substrate space distance s (usually tens of or hundreds of microns) are covered, plane 108 and 118 is substantially
It is upper parallel, and hole 120 is aligned with deposition site R.
It is desirable that vaporization atom is only incident on deposition site R when depositing red-luminescing material 116.Unfortunately, steam
Plumage 124 includes the vaporization atom advanced along many different directions of propagation 126, many directions of propagation not direction with vertical axis 110
Alignment.Therefore, it is advanced by most of vaporization atom of hole 120 along the direction of propagation with considerable cross stream component.Each vapour
Change atom geometrically depending on its angle of propagation and substrate in the incidence point on surface 114 and covering the space pass between shady mask
System, specifically, the alignment of distance s and hole 120 and deposition site R.In order to which (it includes appended claims for this specification
Book), by term " angle of propagation " be defined as by vaporization atom relative to the plane 108 perpendicular to substrate 102 direction (that is, vertical
Direction 128 is aligned with vertical axis 110) the direction of propagation formed angle.For example, vaporization atom 122 is along the direction of propagation 126
It advances, the direction of propagation 126 forms propagation angle theta p relative to vertical direction 128.
The relatively large angular region of the angle of propagation leap-θ m to+θ m of the vaporization atom of steam plumage 124, this leads to existing skill
The significant drawback of art Direct precipitation system.In particular, the surface 114 for causing material 118 to be deposited on outside the periphery of hole 120
On, this commonly referred to as " sprouts wings ".In addition, the emergence amount at hole can increase at a distance from the center of substrate 102 with the hole
Add.
For being positioned at the hole of the immediate vicinity of steam plumage 124, reaching the vaporization atom 122 for covering shady mask 106 has
Angle of propagation in relatively small angular region.In other words, it advances along the direction for being only offset slightly from vertical axis 110.Therefore, pass through
The vaporization atom of these holes is only showing minimum lateral drift (that is, emergence) after shady mask by covering.Therefore, in this region
In, the lateral extent of deposition materials 116 is usually almost aligned (that is, it is mainly deposited on target deposition position with the edge of hole 120
On point R).
However, the vaporization atom that shady mask 106 is covered in arrival crosses over phase for the hole further from the center of steam plumage 124
To larger angular region and include to be relatively close to | θ m | angle of propagation.Therefore, in that region, vaporization atom is covered by covering shade
The lateral distance advanced after mould is larger, sprouts wings so as to cause the deposition materials for the lateral extent for being completely out of hole.This causes
Lateral shift δ f between the edge of aperture and the wherein periphery in the region of deposition materials 116.Therefore, deposition materials extend
Region beyond target deposition site.In some cases, this emergence, which can lead to material and be deposited on, is desirably used for different luminous materials
On the deposited adjacent site (that is, deposition site B and/or G) of material, lead to color mixture whereby.
It should be noted that any additional misalignment covered between shady mask and substrate can aggravate to sprout wings, for example, deviate plane 108 and
118 depth of parallelism (that is, opposite inclination and/or trim between mask and substrate), the uneven degree for covering shady mask and/or substrate
And the translation and/or rotation covered between shady mask and substrate are misaligned.In addition, many prior art depositing systems (such as with
In the system etc. for depositing more than one materials) in, source 102 is positioned relative to substrate bias, this causes even more big emergence to be asked
Topic.
However, aspect of the invention is: the vaporization atom arrival for the angle of propagation for having greater than wanted angle of propagation being stopped to cover shade
Mask 106 can substantially reduce emergence, and the pattern of deposition materials is enable to have relative to the pattern of apertures for covering shady mask whereby
High-resolution and fidelity.
Fig. 2 describes the main feature of the direct patterned deposition system of high accurancy and precision of illustrative embodiments according to the present invention
Cross section schematic diagram.System 200 includes vacuum chamber 202, substrate chuck 204, source 104, covers shady mask 106, mask chuck
206, collimator 208 and positioning system 210.System 200 can operate with by wanted patterns of material vapor deposition on substrate surface and nothing
Need the subsequent abatement patterning operations of such as photoetching and etching.
Be herein about using luminescent material pattern deposition in glass substrate (its as manufacture displayer portion
Point) system 200 described.However, those skilled in the art should be clear after reading this description, the present invention can be directed to
In any various substrates (such as semiconductor substrate (such as silicon, silicon carbide, germanium etc.), ceramic substrate, metal substrate, plastic lining
Bottom) on form the direct patterned layer of actually any film and thick-film material (organic or inorganic).In addition, to the greatest extent
Pipe illustrative embodiments is hot evaporation system, but those skilled in the art should recognize after reading this description, this
Invention can be for actually any material deposition process, such as electron beam evaporation plating, sputter.In addition, although being retouched
The example drawn is the depositing system suitable for single substrate plane treatment, but the present invention is suitable also for other manufacturing methods, example
Such as cluster tools processing, tracking process, scroll bar type processing, coil type processing.Therefore, the present invention is answered suitable for various
With it includes (but being not limited to) package application, IC manufacture, MEMS manufacture, nanotechnological devices manufacture, ball grid array (BGA) systems
Make and so on.
Vacuum chamber 202 is traditional pressure vessel, can be operated to provide the low pressure atmosphere of the vapor deposition of support material 116.It answers
Note that vacuum chamber 202 can be separate unit, the part for depositing system of gathering together or in which multiple deposited chambers are arranged to linear chain
Track the part of depositing system.In some embodiments, vacuum chamber 202 includes the different pattern (example for being capable of forming different materials
Such as (e.g.) emit multiple light emitting sub-pixels of different color (such as red, green and blue) light) several evaporation sources/cover shade
Mask combination.
Fig. 3 describes the behaviour of the method for being deposited on direct patterned material layer on substrate according to illustrative embodiments
Make.Method 300 is described with continued reference to Fig. 2 and with reference to Fig. 4 and 5A to C herein.Method 300 starts from operation 301, wherein by quasi-
Straight device 208 is installed in collimator chuck 210.
Collimator 208 be include by thin-walled separation multiple channels mechanically robust plate, it is as follows will be relative to Fig. 5 A to C
To be described in more detail.Collimator 208 is set size and arrangement for use as spatial filter, selectively makes along almost vertical
Pass through in the vaporization atom (that is, vaporization atom with very small angle of propagation) that the direction of plane 108 is propagated.Therefore, collimator
202 mitigate the emergence across entire substrate 102.
Collimator chuck 210 is for relative to the annular clamp system for covering the shady fixing of mask 106 and positioning collimator.
In operation 302, shady mask 106 will be covered to be installed in mask chuck 206.
Mask chuck 206 is the mechanical folder that will be covered shady mask 106 and be positioned between source 106 and substrate 116.In some implementations
In example, mask chuck 206 is analogous to the electrostatic chuck of substrate chuck 204.In general, only around the periphery branch for covering shady mask 106
Shady mask 106 is covered in support.Therefore, it is in the prior art cover shady mask be intended to it is sagging under the effect of gravity.This sagging part increases
Center clearance between mask and substrate and therefore aggravate the emergence in this region.In some embodiments, mask chuck 206 wraps
Containing make to cover shady mask upwardly bias with offset be attributed to gravity cover the sagging slight curvature of shady mask (such as upward gradient).?
In some embodiments, fine support construction can the opening in across mask chuck 206 extend to support mask and reduce gravity sag.
In operation 303, substrate 102 is installed in substrate chuck 204.
Substrate chuck 204 is the platen for making substrate very flat for fixing substrate 102.Substrate chuck 204 is set
Size and arrangement are only to contact substrate 102 from side (front side or back side) to mitigate on the other side that material is deposited on substrate
Interference.In the illustrated case, substrate chuck 204 is electrostatic chuck, and across dielectric matter applies voltage with by substrate 102
Statically fixed " clamping " is in appropriate location.In some embodiments, substrate chuck 204 is from the two sides of substrate via for example true
The different component of empty mechanical folder fixes substrate, etc..In some embodiments, substrate chuck 204 includes gap sensing in situ
Device is operated with positioning system 212 together to control substrate 102 and cover the spacing and the depth of parallelism between shady mask 106.
It is operating in 304, the opposite position that substrate 102 is controlled by positioning system 212, covers shady mask 106 and collimator 208
It sets.
Positioning system 212 is for controlling substrate 102, source 104, the relative position for covering shady mask 106 and collimator 208
System.Positioning system includes three six axis executors and the optics for controlling substrate 102 and covering the alignment between shady mask 106
To Barebone.Each of six axis executors with it is each in substrate chuck 204, mask chuck 206 and collimator chuck 210
Person is operably connected to control it along the position of each of x-axis, y-axis and z-axis and every in x-axis, y-axis and z-axis
The rotation of one.In some embodiments, the position of at least one of mask chuck 206 and collimator chuck 210 be not by
The control of six axis positioners.In some embodiments, positioning system 212 is also comprising for controlling substrate 102 and covering shady mask 106
The turntable of relative rotation alignment.
In operation 304, positioning system 212 positions substrate and covers shady mask, so that the deposition site in deposition region 216
R is aligned with hole 120, plane 108 and 118 parallel, and substrate and covers distance s between shady mask close in zero
(that is, contact), it is preferable that in a few micrometers (such as 1 to 5 microns).In some embodiments, s is another suitable spacing.
In operation 305, source 104 generates steam plumage 124.As above in relation to described by Fig. 1, the vaporization of steam plumage 124
The relatively large angular region of the angle of propagation leap-θ m to+θ m of atom.
As discussed above in relation to Fig. 1, substrate 102 and the transverse direction and rotary alignment, substrate between shady mask 106 are covered
It 102 and covers the range of the propagation angle theta p that distance s between shady mask 106 and being incident in cover vaporization atom on shady mask and determines and send out
The emergence amount being born at the surface 114 of substrate.
Fig. 4 describes the pixel region of substrate 102 and covers the schematic diagram of its enlarged drawing for corresponding to hole 120 of shady mask 106.
As show in the figure, for the high fidelity between the deposition of the material on hole 120 and deposition site R, by covering shady mask
The angle of propagation of 106 vaporization atom must be in the tolerance interval of-θ a to+θ a.In order to which (it includes appended rights for this specification
Claim), term " acceptable angular region " is defined as to be expected that by the range for the angle of propagation for covering shady mask, is crossed over from-θ a
To the angular region of+θ a.In general, acceptable angular region is that material 116 is enable only to be deposited on deposition position after through hole 120
Angular region on point R.In some embodiments, being subjected to angular region includes the small buffer zone around deposition site to allow to be less than
The emergence of the half of spacing between nearest deposition site.Being incident in the angle of propagation outside this range covers appointing on shady mask
What vaporization atom will be deposited on the surface 114 of the lateral extent beyond deposition site R.
In operation 306, steam plumage 124 is filtered to generate steam plume 214 by collimator 208.
Fig. 5 A describes the schematic diagram of the cross-sectional view of the collimator according to illustrative embodiments.Collimator 208 includes through scheming
For case to form the main body 502 in multiple channels 504, each of multiple channels 504 extend through the thickness of main body 502.
Main body 502 is adapted for the glass plate of plane treatment.In the illustrated case, main body 502 has about 25 millimeters
(mm) thickness；However, any practical thickness can be used without departing substantially from the scope of the present invention.In some embodiments
In, main body 502 includes the different structure suitable for bearing temperature associated with heat and/or electron beam evaporation plating and will not significantly deform
Rigid material.Suitable for the material in main body 502 including (but not limited to) semiconductor (such as silicon, silicon carbide etc.), ceramics
(such as aluminium oxide etc.), composite material (such as carbon fiber etc.), glass fibre, printed circuit board, metal, polymer (example
Such as polyether-ether-ketone (PEEK)) and so on.
Channel 504 is using conventional treatment operation (such as metal forming, drilling, electron discharge processing, deep reactive ion
Etching (DRIE)) come the through-hole that is formed in main body 502.In the illustrated case, channel 504 has circle
Cross section, the diameter with about 3mm.Therefore, the wide aspect ratio of height of the channel 504 with about 8:1.Preferably, high wide aspect ratio
At least equal to 3:1.In addition, for be more than 100:1 the wide aspect ratio of height, begun to decrease to by the vaporization atomic current of collimator non-
Wanted level；However, the wide aspect ratio of height for being more than 100:1 is within the scope of the invention.In some embodiments, channel 504
With non-circular transverse cross-section (such as square, rectangle, hexagon, octagon, irregular shape etc.).
The formation in channel 504 generates the multiple walls 506 resided between channel.Preferably, high-throughput to realize, wall 506
It will structural intergrity that is thin as much as possible and not sacrificing main body 502.In the illustrated case, wall 506 is with about 500 microns
Average thickness；However, any practical thickness can be used in wall 506.
Fig. 5 B to C describes the top view in the region of collimator 208 and the schematic diagram of sectional view respectively.Channel 506 is arranged to
Honeycomb arrangement, wherein column are periodic and adjacent column is from its neighbor's offset half period.In some embodiments, channel
It is arranged to the different arrangements that such as two-dimension periodic, six sides are tightly packed, random and so on.
As described in Fig. 5 C, the aspect ratio in channel 504 defines filtering angular region.In order to which (it includes appended for this specification
Claims), term " filtering angular region " is defined as to cross over by the range of the angle of propagation of collimator 208 from-θ c
To the angular region of+θ c.Therefore, have and be greater than | θ c | the vaporization atom of angle of propagation collimated device is stopped.
Those skilled in the art should be understood that above with respect to size provided by main body 502, channel 504 and wall 506
Only for explanation, and other sizes can be used without departing substantially from the scope of the present invention.
In operation 307, hole 120 passes through the vaporization atom of steam plume 214, so that it is deposited on deposition region 216
In deposition site R on.
In optional operation 308, movement is bestowed collimator 208 to improve vaporization atomic density across steaming by positioning system 212
The uniformity of the lateral extent of vapour column 214 improves the deposition uniformity across the deposition site on substrate 102 whereby.In some realities
It applies in example, positioning system 212 can be operated so that collimator 208 is bestowed in oscillating movement.
It should be noted that in an illustrative embodiment, the point source of the substantially material 116 of source 104, this is because its crucible is spacious
Open area of the area significantly less than substrate 102.
In optional operation 309, positioning system 212 is equal to improve deposition relative to substrate moving source 102 in an x-y plane
Even property.
In some embodiments, source 104 is linear evaporation source comprising transmitting vaporizes the multiple of the fan-shaped steam plumage of atom
Nozzle.In some embodiments, positioning system 212 in an x-y plane along the direction that is not aligned with its longitudinal axis move linear sources with
Improve the uniformity of the deposition materials on substrate 102.In some embodiments, this path is be generally orthogonal to nozzle linear
The route of 110 the two of arrangement and vertical axis.In some embodiments, linear sources are moved along nonlinear path in an x-y plane.
In some embodiments, source 104 includes the two-dimensional arrangement of nozzle, and each nozzle emits taper steam plumage, so that more
A nozzle provides the substantial uniform vaporization atomic current on the region of substrate surface jointly.In some embodiments, positioning system
The two-dimensional arrangement of 212 moving nozzles is to promote deposition uniformity.In some embodiments, the two-dimensional arrangement of nozzle is revolved in the planes
Turn to promote deposition uniformity.
In some embodiments, source 104 is two-dimensional surface source, and it includes the material layers 116 being distributed across its top surface.Source is through cloth
It sets so that this top surface is parallel to and towards substrate 102.Material 116 across uniform plane is vaporized when being heated.Tung et al. exists
" (OLED Fabrication by Using a Novel Planar is manufactured by using the OLED of novel flat evaporation technique
Evaporation Technique) " (Int.J.of Photoenergy, the 2014th (18) volume, page 1 to page 8 (2014))
It discloses in (it is incorporated herein by reference) suitable for the exemplary planar evaporation source in the embodiment of the present invention.
In some embodiments, it to improve uniformity when material 116 is deposited on the 2 dimensional region on surface 114, positions
System 212 come the source of bestowing 104 and substrate 102 and covers shady mask 106 by mobile substrate/at least one of mask combination and source
Combination between relative motion.
It will be appreciated that the present invention is only taught according to some embodiments of the present invention, and those skilled in the art can read
Many variations of the invention are easy to imagine that after reader invention, and the scope of the present invention will be determined by the claims that follow.
Claims (25)
1. a kind of system for the first material to be deposited on multiple deposition sites in the deposition region of substrate, the multiple
Deposition site is arranged to the first arrangement, wherein the system comprises:
Source is used to provide the described the more vaporization atoms of the first of the first material, each in more than described first vaporization atom
Person propagates along the direction of propagation, and the direction of propagation is relative to the first direction perpendicular to the first plane defined by the substrate
Angle of propagation be characterized, wherein more than described first the angle of propagation of vaporization atom the first angular region of range spans；
Cover shady mask comprising be arranged to multiple holes of first arrangement；And
Collimator comprising multiple channels, the collimator between the source and it is described cover between shady mask, wherein the multiple
Each of channel is set size and arrangement only to make with the biography in the second angular region less than first angular region
The vaporization atom for broadcasting angle passes through.
2. system according to claim 1, wherein first material is organic material.
3. system according to claim 2, wherein first material can be operated to emit the organic material of light.
4. system according to claim 1, wherein the multiple deposition site and the multiple hole are defined jointly and can be connect
By angular region, and wherein, second angular region is less than or equal to the acceptable angular region.
5. system according to claim 1, wherein each of the multiple channel is to be equal to or greater than about the height of 3:1
Wide aspect ratio is characterized.
6. system according to claim 1, wherein each of the multiple channel is wide with the height equal to or more than 8:1
Aspect ratio is characterized.
7. system according to claim 1, wherein there is edge to be orthogonal to the second of the first direction for the deposition region
First length in direction, and wherein the source includes multiple nozzles for emitting the multiple vaporization atom, the multiple spray
Mouth is arranged to the second arrangement with the second length along the second direction, and second length is greater than or equal to described first
Length.
8. system according to claim 7, wherein the source can be moved along third direction relative to the deposition region, institute
It is mutually orthogonal for stating first direction, the second direction and the third direction.
9. system according to claim 7, wherein second arrangement is two with the third length along third direction
Dimension arrangement, the first direction, the second direction and the third direction are mutually orthogonal.
10. system according to claim 1, wherein the source has the single spray for emitting the multiple vaporization atom
Mouth, the source can in the second generally parallel with first plane plane along two dimensions relative to the deposition region
It is mobile.
11. system according to claim 1, further comprise can operate with bestow the substrate and the collimator it
Between relative motion positioning system.
12. a kind of system for the first material to be deposited on multiple deposition sites in the deposition region of substrate, described more
A deposition site is arranged to the first arrangement, wherein the system comprises:
Source can be operated to provide multiple vaporization atoms, and each of the multiple vaporization atom is along the biography for defining angle of propagation
Direction traveling is broadcast, plurality of angle of propagation crosses over the first angular region；
Cover shady mask comprising multiple holes of first arrangement are arranged to, wherein the shady mask and the multiple heavy of covering
The acceptable angular region less than first angular region is defined jointly in product site；And
Collimator, be positioned at the source and it is described cover between shady mask, the collimator includes multiple channels, the multiple logical
Each of road has the wide aspect ratio of the height for defining the filtering angular region less than or equal to the acceptable angular region.
13. system according to claim 12, wherein the substrate defines the first plane and perpendicular to first plane
First direction, and wherein the source include for emit it is the multiple vaporization atom multiple nozzles, the multiple nozzle cloth
It is set to the second arrangement, described second is arranged in the second generally parallel with first plane plane in a second direction
The first length, and further wherein the source can move in second plane along path, and the path is not with described
The alignment of two directions.
14. system according to claim 12, wherein the deposition region has the first area in first plane,
And wherein the source includes the first jet for emitting the multiple vaporization atom, and further wherein the source can be substantially
It is moved in upper second plane parallel with first plane.
15. system according to claim 12 further comprises positioning system, the positioning system can be operated to bestow
Relative motion between the collimator and the substrate.
16. system according to claim 11, wherein the high wide aspect ratio is at least 3:1.
17. system according to claim 11, wherein the high wide aspect ratio is at least 8:1.
18. a kind of method for the first material to be deposited on the multiple deposition sites for being arranged to the first arrangement on substrate,
The method comprise the steps that
More than first vaporization atoms of reception, the collimator positioner are arranged in source and with being arranged to described first at collimator
Multiple holes cover between shady mask, wherein more than described first vaporization atom is characterized by first propagates angular region；
Shady mask is covered described in by the collimator with making more than second vaporization atoms, wherein more than described second
Vaporization atom is characterized by being narrower than described first and propagate the second propagation angular region of angular region；And
Be deposited at least some of more than described second vaporization atom can by the multiple hole on the substrate.
19. method according to claim 18, further comprising: the collimator is provided, so that the collimator includes more
A channel, each of the multiple channel, which has, determines the described second wide aspect ratio of height for propagating angular region.
20. described to connect according to the method for claim 19, wherein the high wide aspect ratio is to be based on acceptable angular region
It by the substrate and described covered shady mask by angular region and defined.
21. according to the method for claim 20, wherein the high wide aspect ratio is defined less than or equal to the acceptable angle
The filtering angular region of range.
22. the method according to claim 11, further comprising:
More than first vaporizations atom is generated at source；And
Relative to the mobile source of the substrate.
23. according to the method for claim 22, further comprising: providing linear arrangement of the source as nozzle.
24. according to the method for claim 22, further comprising: providing two-dimensional arrangement of the source as nozzle.
25. according to the method for claim 18, further comprising: bestowing the phase between the collimator and the substrate
To movement.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662340793P | 2016-05-24 | 2016-05-24 | |
| US62/340,793 | 2016-05-24 | ||
| PCT/US2017/033161 WO2017205147A1 (en) | 2016-05-24 | 2017-05-17 | High-precision shadow-mask-deposition system and method therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109642313A true CN109642313A (en) | 2019-04-16 |
| CN109642313B CN109642313B (en) | 2021-03-09 |
Family
ID=65563028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780040228.5A Active CN109642313B (en) | 2016-05-24 | 2017-05-17 | High-precision shadow mask deposition system and method |
Country Status (2)
| Country | Link |
|---|---|
| EP (1) | EP3464674A4 (en) |
| CN (1) | CN109642313B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012052155A (en) * | 2010-08-31 | 2012-03-15 | Canon Inc | Mask unit for vacuum film deposition and vacuum film deposition apparatus with the same |
| CN103238374A (en) * | 2010-12-27 | 2013-08-07 | 夏普株式会社 | Vapor deposition apparatus, vapor deposition method, and organic electroluminescence (EL) display apparatus |
| CN203159695U (en) * | 2013-01-22 | 2013-08-28 | 昆山允升吉光电科技有限公司 | Masking component used for evaporation |
| WO2014119452A1 (en) * | 2013-01-29 | 2014-08-07 | シャープ株式会社 | Vapor deposition unit and vapor deposition device |
| CN104911548A (en) * | 2015-06-30 | 2015-09-16 | 合肥鑫晟光电科技有限公司 | Vacuum evaporation device and evaporation method |
| CN105378139A (en) * | 2013-07-08 | 2016-03-02 | 夏普株式会社 | Deposition device, deposition method, and method for producing organic electroluminescent element |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0741943A (en) * | 1993-07-27 | 1995-02-10 | Nec Corp | Sputtering device |
| JP2833979B2 (en) * | 1993-11-26 | 1998-12-09 | 日本電気株式会社 | Sputtering device with collimator |
| TWI252706B (en) * | 2002-09-05 | 2006-04-01 | Sanyo Electric Co | Manufacturing method of organic electroluminescent display device |
| US7239376B2 (en) * | 2005-07-27 | 2007-07-03 | International Business Machines Corporation | Method and apparatus for correcting gravitational sag in photomasks used in the production of electronic devices |
-
2017
- 2017-05-17 EP EP17803308.0A patent/EP3464674A4/en active Pending
- 2017-05-17 CN CN201780040228.5A patent/CN109642313B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012052155A (en) * | 2010-08-31 | 2012-03-15 | Canon Inc | Mask unit for vacuum film deposition and vacuum film deposition apparatus with the same |
| CN103238374A (en) * | 2010-12-27 | 2013-08-07 | 夏普株式会社 | Vapor deposition apparatus, vapor deposition method, and organic electroluminescence (EL) display apparatus |
| CN203159695U (en) * | 2013-01-22 | 2013-08-28 | 昆山允升吉光电科技有限公司 | Masking component used for evaporation |
| WO2014119452A1 (en) * | 2013-01-29 | 2014-08-07 | シャープ株式会社 | Vapor deposition unit and vapor deposition device |
| CN105378139A (en) * | 2013-07-08 | 2016-03-02 | 夏普株式会社 | Deposition device, deposition method, and method for producing organic electroluminescent element |
| CN104911548A (en) * | 2015-06-30 | 2015-09-16 | 合肥鑫晟光电科技有限公司 | Vacuum evaporation device and evaporation method |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3464674A4 (en) | 2020-01-29 |
| CN109642313B (en) | 2021-03-09 |
| EP3464674A1 (en) | 2019-04-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10072328B2 (en) | High-precision shadow-mask-deposition system and method therefor | |
| TWI633197B (en) | High-precision shadow-mask-deposition system and method therefor | |
| US10386731B2 (en) | Shadow-mask-deposition system and method therefor | |
| CN103484817B (en) | Mask for deposition and the method that manufactures organic light emitting diode display with it | |
| TWI737795B (en) | High-precision shadow-mask-deposition system and method therefor | |
| KR20120132177A (en) | Patterning slit sheet assembly, apparatus for organic layer deposition, method for manufacturing organic light emitting display apparatus and organic light emitting display apparatus | |
| US11905590B2 (en) | Direct-deposition system including standoffs for controlling substrate-mask separation | |
| WO2018092182A1 (en) | Vapor deposition mask, vapor deposition apparatus, vapor deposition mask production method, and electroluminescent display apparatus production method | |
| CN109642313A (en) | High-precision shadow mask deposition system and method | |
| US20180309091A1 (en) | Restriction unit, vapor deposition device, production method for vapor deposition film, production method for electroluminescence display device, and electroluminescence display device | |
| CN107663623A (en) | Mask and preparation method thereof | |
| US11152573B2 (en) | Shadow mask comprising a gravity-compensation layer and method of fabrication | |
| US20240042482A1 (en) | Evaporation system having improved collimation | |
| US20240081136A1 (en) | System and Method for Direct Patterning Using a Compensated Shadow Mask |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |