CN109634343B - On-chip secondary power supply circuit taking band-gap reference circuit as core - Google Patents
On-chip secondary power supply circuit taking band-gap reference circuit as core Download PDFInfo
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- CN109634343B CN109634343B CN201910091058.4A CN201910091058A CN109634343B CN 109634343 B CN109634343 B CN 109634343B CN 201910091058 A CN201910091058 A CN 201910091058A CN 109634343 B CN109634343 B CN 109634343B
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Abstract
The invention belongs to the technical field of analog integrated on-chip secondary power supplies, and particularly relates to an on-chip secondary power supply circuit taking a band gap reference circuit as a core. The realization circuit has a simple structure, is easy to transplant in various processes, can adapt to various application conditions, has a better temperature coefficient, and meets the requirement of normal work under extreme temperature conditions.
Description
Technical Field
The invention belongs to the technical field of secondary power supplies on analog integrated chips, and particularly relates to an on-chip secondary power supply circuit with a band-gap reference circuit as a core.
Background
The secondary power supply technology on chip can realize the secondary power supply to drivers or circuits needing internal secondary power supply structure, usually acts on a logic control part, and can enable the logic control part to carry out logic signal transmission under lower working voltage. The secondary power supply structure is formed by taking the Zener voltage-stabilizing tube as a core, but because the device has high requirements on process parameters and process stability and the output voltage has larger change along with the temperature, the secondary power supply structure adopting the Zener voltage-stabilizing tube has larger difference of the output voltage among different process batches in practical application and is sensitive to the working temperature.
Disclosure of Invention
The invention aims to provide an on-chip secondary power supply circuit taking a band-gap reference circuit as a core, which realizes the on-chip secondary power supply on the basis of the band-gap reference core circuit.
The invention is realized by the following technical scheme:
an on-chip secondary power supply circuit taking a band-gap reference circuit as a core comprises the band-gap reference circuit, a proportional amplification circuit and a driving circuit module for driving a post-stage circuit;
the band-gap reference circuit is used for generating a band-gap reference voltage;
the proportional amplifying circuit is used for amplifying the band gap reference voltage to a secondary power supply voltage required by the on-chip secondary power supply circuit;
and the driving circuit module is used for converting the secondary power supply voltage into the secondary power supply voltage with driving capability.
Further, the proportional amplifying circuit comprises a resistor Ra and a resistor Rb, and the band-gap reference voltage Vref is amplified to the required secondary power supply voltage V through the resistor Ra and the resistor RbO。
Further, the bandgap reference circuit comprises a cascode current mirror, a transistor Q5, a transistor Q6, a resistor Rc and a resistor Radj;
the emitter of the transistor Q5 is connected with one end of a resistor Radj, the base is connected with one end of a resistor Rb, and the collector is connected with a cascode current mirror;
the emitter of the transistor Q6 is connected with one end of the resistor Rc, the base is connected with one end of the resistor Rb, and the collector is connected with the cascode current mirror;
resistor Radj has one end connected to the emitter of transistor Q5 and one end of resistor Rc, and the other end connected to ground.
Further, the resistor Radj adopts a topological structure and comprises a resistor R1 and a plurality of resistors R1 which are connected in series.
Further, the emitter area ratio of the transistor Q5 and the transistor Q6 was 1: 8.
Further, a cascode current mirror is formed by the transistor Q1, the transistor Q2, the transistor Q3, and the transistor Q4;
the emitter of the transistor Q1 is connected with a voltage source Vs, the base is connected with the base of the transistor Q2 and the emitter of the transistor Q4, and the collector is connected with the emitter of the transistor Q3;
the base electrode and the collector electrode of the transistor Q2 are connected with the emitter electrode of the transistor Q4, and the emitter electrode is connected with a voltage source Vs;
the emitter of the transistor Q3 is connected with the collector of the transistor Q1, the base is connected with the base of the transistor Q4 and the collector of the transistor Q6, and the collector is connected with the collector of the transistor Q5;
the base and collector of transistor Q4 are connected to the collector of transistor Q6.
Further, a resistor is connected between the emitter of the transistor Q1 and the voltage source Vs, and a resistor is connected between the emitter of the transistor Q2 and the voltage source Vs.
Further, the driving line module comprises a transistor Q7, a transistor Q8, a transistor Q9, a transistor Q10, a transistor Q11, a transistor Q12, a protection tube D1 and a constant current source I;
the emitter of the transistor Q11 is connected with a voltage source Vs, the collector is connected with one end of a protection tube D1, and the base is connected with a constant current source I; the emitter of the transistor Q12 is connected with a voltage source Vs, and the base and the collector are connected with a constant current source I; one end of the constant current source I is connected with the base electrode of the transistor Q11, and the other end is grounded;
the emitter of the transistor Q7 is connected with the collector of the transistor Q11, the base is connected with the collector of the transistor Q5, and the collector is connected with one end of the resistor Rd;
the collector of the transistor Q8 is connected with the collector of the transistor Q11, the base is connected with one end of the resistor Rd, and the emitter is grounded;
the base of the transistor Q9 is connected with the collector of the transistor Q11, the collector is connected with a voltage source Vs, the emitter is connected with one end of a resistor Ra, the other end of the resistor Ra is connected with one end of a resistor Rb, and the other end of the resistor Rb is grounded;
the transistor Q10 has a base connected to the collector of the transistor Q11, a collector connected to a voltage source Vs, and an emitter connected to a subsequent circuit.
Further, the level of the base of the transistor Q9 is higher than the secondary power supply voltage VO0.7V larger.
Compared with the prior art, the invention has the following beneficial technical effects:
the invention discloses an on-chip secondary power supply circuit, which takes a band gap reference as a core structure, amplifies a band gap reference voltage to a required secondary power supply voltage through a proportional resistor, and adds a driving circuit module for a post-stage circuit on the basis of the band gap reference voltage to obtain the secondary power supply voltage with certain driving capability. The circuit structure can be widely applied to analog and digital-analog hybrid integrated circuits, has better temperature performance, smaller load regulation rate and adjustable secondary power output, can adapt to various application conditions, and meets the requirement of normal work under extreme temperature conditions.
Further, after the band gap reference output, the output secondary power supply voltage is amplified to the required V by adjusting the value of the proportional resistor RaOIn which V isOCan generate any of Vref, Ra/RbThe required secondary power supply voltage value can be generated simultaneously by adding a proportional resistor pair and a corresponding driving circuit module.
Furthermore, a cascode current mirror is adopted as the band-gap reference current source, and the cascode current mirror refers to a stacked current mirror, so that the accuracy of the mirror current can be improved, and the influence of the change of the power supply voltage on the reference voltage can be effectively reduced.
Further, a resistor is connected between the emitter of the transistor Q1 and the voltage source Vs, and a resistor is connected between the emitter of the transistor Q2 and the voltage source Vs, and both resistors play a role in making the cascode current mirror output current more matched, and a role in making the collector current of the transistor Q5 closer to the collector current of the transistor Q6, which is a necessary condition for establishing a bandgap reference, and a role in making the bandgap reference voltage closer to a theoretical value.
Further, after the reference voltage is generated, the reference voltage is amplified to the required secondary power supply voltage through the proportional resistors Ra and Rb, the Q9 provides direct current bias for the proportional resistors, and the Q9 base level provides a stable secondary power supply for a subsequent circuit after passing through the BE junction of the driving tube Q10; q7, Q8 provide certain current drive ability for the band gap reference circuit, and the power consumption of whole circuit is about 200 mu A, and D1 restricts the highest output of secondary power supply as the protection tube, and constant current source I provides base drive current for Q9, Q10 through the current mirror that Q11, Q12 formed.
Drawings
FIG. 1 is a circuit for supplying power to an on-chip secondary power supply with a bandgap reference circuit as a core;
FIG. 2 is a Radj circuit design topology;
FIG. 3 is a band gap reference temperature drift;
fig. 4 is a secondary power supply voltage temperature drift.
Detailed Description
The present invention will now be described in further detail with reference to specific examples, which are intended to be illustrative, but not limiting, of the invention.
As shown in fig. 1, the on-chip secondary power supply circuit of the present invention includes a bandgap reference circuit, a proportional amplifier circuit, and a driving circuit module. A band-gap reference circuit is used as a core structure, and a proportional amplifying circuit and a driving circuit module are added on the basis of the band-gap reference circuit to obtain a secondary power supply circuit with certain driving capability. The realization circuit has simple structure, is easy to transplant in various processes, can adapt to various application conditions, has better temperature coefficient, and meets the requirement of normal work of the circuit under the extreme temperature condition.
A band gap reference core circuit structure is arranged in the middle of a rectangular frame in fig. 1, and the band gap reference circuit comprises a cascode current mirror, a transistor Q5, a transistor Q6, a resistor Rc and a resistor Radj; the proportional amplifying circuit comprises a resistor Ra and a resistor Rb, and the band-gap reference voltage Vref is amplified to the required secondary power supply voltage V through the resistor Ra and the resistor RbO(ii) a The driving line module comprises a transistor Q7, a transistor Q8, a transistor Q9, a transistor Q10, a transistor Q11, a transistor Q12, a protection tube D1 and a constant current source I.
The specific circuit connection structure is as follows: the emitter of the transistor Q1 is connected with a voltage source Vs, the base is connected with the base of the transistor Q2 and the emitter of the transistor Q4, and the collector is connected with the emitter of the transistor Q3; the base electrode and the collector electrode of the transistor Q2 are connected with the emitter electrode of the transistor Q4, and the emitter electrode is connected with a voltage source Vs; the emitter of the transistor Q3 is connected with the collector of the transistor Q1, the base is connected with the base of the transistor Q4 and the collector of the transistor Q6, and the collector is connected with the collector of the transistor Q5; the base electrode and the collector electrode of the transistor Q4 are connected with the collector electrode of the transistor Q6;
the emitter of the transistor Q5 is connected with one end of a resistor Radj, and the base is connected with one end of a resistor Rb; the emitter of the transistor Q6 is connected with one end of the resistor Rc, and the base is connected with one end of the resistor Rb; one end of a resistor Radj is connected with an emitter of the transistor Q5 and one end of the resistor Rc, and the other end of the resistor Radj is grounded;
the emitter of the transistor Q11 is connected with a voltage source Vs, the collector is connected with one end of a protection tube D1, and the base is connected with a constant current source I; the emitter of the transistor Q12 is connected with a voltage source Vs, and the base and the collector are connected with a constant current source I; one end of the constant current source I is connected with the base electrode of the transistor Q11, and the other end is grounded;
the emitter of the transistor Q7 is connected with the collector of the transistor Q11, the base is connected with the collector of the transistor Q5, and the collector is connected with one end of the resistor Rd; the collector of the transistor Q8 is connected with the collector of the transistor Q11, the base is connected with one end of the resistor Rd, and the emitter is grounded;
the base of the transistor Q9 is connected with the collector of the transistor Q11, the collector is connected with a voltage source Vs, the emitter is connected with one end of a resistor Ra, the other end of the resistor Ra is connected with one end of a resistor Rb, and the other end of the resistor Rb is grounded;
the transistor Q10 has a base connected to the collector of the transistor Q11, a collector connected to a voltage source Vs, and an emitter connected to a subsequent circuit.
The current source of the band-gap reference circuit adopts a cascode current mirror formed by the transistor Q1, the transistor Q2, the transistor Q3 and the transistor Q4, and can effectively reduce the influence of the power supply voltage change on the reference voltage. The bandgap reference circuit adopts a 1:8 structure proportion tube, specifically means that the emitter area ratio of the transistor Q5 and the transistor Q6 is 1:8, and the bandgap reference circuit is used for adjusting the generated bandgap reference voltage value.
A resistor may be provided between the emitter of transistor Q1 and the voltage source Vs and a resistor may be provided between the emitter of transistor Q2 and the voltage source Vs, both resistors acting here to make the cascode current mirror output current more matched, which acts to bring the collector current of transistor Q5 closer to the collector current of transistor Q6, which is a necessary condition for the bandgap reference to be established, which acts to bring the bandgap reference voltage closer to the theoretical value.
Since the BE junction temperature coefficients of the transistor Q9 and the transistor Q10 cancel each other out, the temperature coefficient of the voltage of the secondary power supply reaching the subsequent circuit is improved.
The current source I, the transistor Q11 and the transistor Q12 are seen in this structure as exclusively providing driving currents for the transistor Q9 and the transistor Q10, but in a specific circuit, it is a global reference current, which not only provides current for the secondary power supply, but also provides current for the transistor Q9 only for the proportional resistor, the transistor Q7 and the transistor Q8 function to absorb the excess current provided from the collector of the transistor Q11, and absorb the change when the collector current of the transistor Q11 changes, so as to ensure the circuit to be stable, and simultaneously the base current of the transistor Q7 is injected into the emitter of the transistor Q5 to perform a current compensation function on the emitter of the transistor Q5 and the collector current of the transistor Q6 to be closer.
The band-gap reference voltage Vref is generated and amplified to the required secondary power supply voltage V by the proportional resistors Ra and RbOTransistor Q9 provides a dc bias for the proportional resistor. Transistor Q9 base level about VO+0.7V, and the BE junction of the transistor Q10 provides stable secondary power supply voltage V for subsequent circuitsOut(ii) a The transistor Q7 and the transistor Q8 provide certain sinking current driving capability for the bandgap reference circuit. The power consumption of the whole circuit is about 200 muA, and the D1 is used as a protection tube to limit the highest output of the secondary power supply.
The key of designing an on-chip secondary power supply circuit taking a band gap reference circuit as a core is that the band gap reference voltage output value Vref has the minimum temperature coefficient by adjusting the value of Radj resistor, the circuit design topological structure of Radj is shown in figure 2 and comprises a resistor R1 and a plurality of resistors R1, Radj is R1+ n R1, the band gap reference voltage can reach the optimal value of the adopted process by adjusting the value of n, and the output secondary power supply voltage is amplified to the required V by adjusting the values of proportional resistors Ra and Rb after the band gap reference is outputO. Wherein VOTheoretically, any desired value of the secondary power supply voltage can be generated, and by adding a driver stage, a plurality of different values of the secondary power supply voltage can be generated at the same time.
The invention overcomes the defects of the prior art, provides a circuit structure, and designs an on-chip secondary power supply circuit taking a band-gap reference circuit as a core. The band-gap reference voltage is only related to the process adopted by the circuit and is not related to the working voltage and the working temperature of the circuit, so that the band-gap reference circuit becomes a core circuit module for realizing voltage reference and current reference in a high-precision analog integrated circuit, and an on-chip secondary power supply circuit designed for the core has low sensitivity to voltage and temperature change and can provide high-precision secondary power supply voltage for a subsequent circuit.
The circuit structure can be widely applied to analog and digital-analog hybrid integrated circuits, has better temperature performance, smaller load regulation rate and adjustable secondary power output, can adapt to various application conditions, and meets the requirement of normal work under extreme temperature conditions.
Claims (6)
1. An on-chip secondary power supply circuit taking a band-gap reference circuit as a core is characterized by comprising the band-gap reference circuit, a proportional amplification circuit and a driving circuit module for driving a post-stage circuit;
the band-gap reference circuit is used for generating a band-gap reference voltage; the band-gap reference circuit comprises a cascode current mirror, a transistor Q5, a transistor Q6, a resistor Rc and a resistor Radj; the emitter of the transistor Q5 is connected with one end of a resistor Radj, the base is connected with one end of a resistor Rb, and the collector is connected with a cascode current mirror; the emitter of the transistor Q6 is connected with one end of the resistor Rc, the base is connected with one end of the resistor Rb, and the collector is connected with the cascode current mirror; one end of a resistor Radj is connected with an emitter of the transistor Q5 and one end of the resistor Rc, and the other end of the resistor Radj is grounded;
the proportional amplifying circuit is used for amplifying the band gap reference voltage to a secondary power supply voltage required by the on-chip secondary power supply circuit; the proportional amplifying circuit comprises a resistor Ra and a resistor Rb, and the band-gap reference voltage Vref is amplified to the required secondary power supply voltage V through the resistor Ra and the resistor RbO；
The driving circuit module is used for converting the secondary power supply voltage into a secondary power supply voltage with driving capability; the driving circuit module comprises a transistor Q7, a transistor Q8, a transistor Q9, a transistor Q10, a transistor Q11, a transistor Q12, a protection tube D1 and a constant current source I;
the emitter of the transistor Q11 is connected with a voltage source Vs, the collector is connected with one end of a protection tube D1, and the base is connected with a constant current source I; the emitter of the transistor Q12 is connected with a voltage source Vs, and the base and the collector are connected with a constant current source I; one end of the constant current source I is connected with the base electrode of the transistor Q11, and the other end is grounded; the other end of the protection tube D1 is grounded;
the emitter of the transistor Q7 is connected with the collector of the transistor Q11, the base is connected with the collector of the transistor Q5, and the collector is connected with one end of the resistor Rd;
the collector of the transistor Q8 is connected with the collector of the transistor Q11, the base is connected with one end of the resistor Rd, and the emitter is grounded; the other end of the resistor Rd is grounded;
the base of the transistor Q9 is connected with the collector of the transistor Q11, the collector is connected with a voltage source Vs, the emitter is connected with one end of a resistor Ra, the other end of the resistor Ra is connected with one end of a resistor Rb, and the other end of the resistor Rb is grounded;
the transistor Q10 has a base connected to the collector of the transistor Q11, a collector connected to a voltage source Vs, and an emitter connected to a subsequent circuit.
2. The on-chip secondary power supply circuit with the bandgap reference circuit as the core according to claim 1, wherein the resistor Radj adopts a topology structure including a resistor R1 and a plurality of resistors R1 connected in series.
3. The on-chip secondary power supply circuit with a bandgap reference circuit as core of claim 1, wherein the emitter area ratio of the transistor Q5 and the transistor Q6 is 1: 8.
4. The on-chip secondary power supply circuit with a bandgap reference circuit as a core according to claim 1, wherein the cascode current mirror is formed by a transistor Q1, a transistor Q2, a transistor Q3 and a transistor Q4;
the emitter of the transistor Q1 is connected with a voltage source Vs, the base is connected with the base of the transistor Q2 and the emitter of the transistor Q4, and the collector is connected with the emitter of the transistor Q3;
the base electrode and the collector electrode of the transistor Q2 are connected with the emitter electrode of the transistor Q4, and the emitter electrode is connected with a voltage source Vs;
the emitter of the transistor Q3 is connected with the collector of the transistor Q1, the base is connected with the base of the transistor Q4 and the collector of the transistor Q6, and the collector is connected with the collector of the transistor Q5;
the base and collector of transistor Q4 are connected to the collector of transistor Q6.
5. The on-chip secondary power supply circuit with a bandgap reference circuit as core according to claim 4, wherein a resistor is connected between the emitter of the transistor Q1 and the voltage source Vs, and a resistor is connected between the emitter of the transistor Q2 and the voltage source Vs.
6. The band gap reference circuit-centric on-chip two according to claim 1The secondary power supply circuit is characterized in that the level of the base of the transistor Q9 is higher than the secondary power supply voltage VO0.7V larger.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910091058.4A CN109634343B (en) | 2019-01-30 | 2019-01-30 | On-chip secondary power supply circuit taking band-gap reference circuit as core |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910091058.4A CN109634343B (en) | 2019-01-30 | 2019-01-30 | On-chip secondary power supply circuit taking band-gap reference circuit as core |
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| CN109634343A CN109634343A (en) | 2019-04-16 |
| CN109634343B true CN109634343B (en) | 2020-09-04 |
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| CN1154032C (en) * | 1999-09-02 | 2004-06-16 | 深圳赛意法微电子有限公司 | Band-gap reference circuit |
| US6294902B1 (en) * | 2000-08-11 | 2001-09-25 | Analog Devices, Inc. | Bandgap reference having power supply ripple rejection |
| JP6809359B2 (en) * | 2017-04-26 | 2021-01-06 | サンケン電気株式会社 | Reference voltage generation circuit |
| CN207623828U (en) * | 2017-12-12 | 2018-07-17 | 北京时代民芯科技有限公司 | A kind of band-gap reference circuit of integrated temperature protection and curvature compensation function |
| CN108469867A (en) * | 2018-05-17 | 2018-08-31 | 西安微电子技术研究所 | A kind of undervoltage lockout circuit of bandgap voltage reference structure |
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