CN109616496B - Manufacturing method of OLED touch display screen - Google Patents
Manufacturing method of OLED touch display screen Download PDFInfo
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- CN109616496B CN109616496B CN201811361832.0A CN201811361832A CN109616496B CN 109616496 B CN109616496 B CN 109616496B CN 201811361832 A CN201811361832 A CN 201811361832A CN 109616496 B CN109616496 B CN 109616496B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
Abstract
Compared with the prior art, when the touch layer is manufactured, the first insulating layer is not etched after the first insulating layer is formed through deposition and before the bridge point layer is formed through deposition, and the first insulating layer and the second insulating layer are etched together through the cooperation of two etching gases after the second insulating layer is formed through deposition, so that the same manufacturing process of contact holes with two different depths in the touch layer is realized, the corrosion of a wet etching process to the OLED is effectively reduced, the production process is simplified, the production capacity of equipment is improved, meanwhile, the pre-protection effect on a touch lead and a binding pad in a source drain electrode layer can be realized, and the function failure caused by corrosion or oxidation is avoided.
Description
Technical Field
The invention relates to the technical field of touch display, in particular to a manufacturing method of an OLED touch display screen.
Background
In the flat panel display technology, an Organic Light-Emitting Diode (OLED) display has many advantages of being Light and thin, Emitting Light actively, fast in response speed, large in visible angle, wide in color gamut, high in brightness, low in power consumption, and the like, and is gradually becoming a third generation display technology following the liquid crystal display. Compared with a Liquid Crystal Display (LCD), the OLED has the advantages of power saving, thinness, and wide viewing angle, which is incomparable with the LCD. At present, the requirement for the fineness of the display, i.e. the resolution, is higher and higher, but the production of high-quality and high-resolution OLED display screens still faces many challenges.
Currently, the commonly used touch technologies include an external touch technology and an embedded touch technology. The in-cell touch technology is to integrate a touch sensor into a display panel, and because the in-cell touch technology can make a display device thinner and lighter compared with an out-cell touch technology, the in-cell touch technology is more concerned about an OLED display device; taking a liquid crystal panel as an example, the external-hanging touch technology is a method of embedding a touch screen between a color filter substrate and a polarizer of a display screen, that is, a touch sensor is arranged on the liquid crystal panel, and compared with the embedded touch technology, the difficulty is reduced.
Along with the rapid development of the flexible display screen OLED technology, the touch screen matched with the flexible display screen OLED technology is required to have the characteristic that the flexibility can be wound and folded, the traditional touch screen is required to be manufactured independently, then the complete touch display module is formed on the upper surface of the OLED through the lamination of the optical transparent adhesive, the lamination process is increased, meanwhile, the overall thickness is also increased, and the overall lightening and thinning of the flexible touch display screen are not facilitated.
In the technical development of the existing externally-hung OLED touch display screen, a touch sensor is generally manufactured on an OLED layer, and the specific process is as follows: firstly, a TFT layer including a substrate is manufactured, a source drain electrode (SD) layer in the TFT layer comprises a touch lead and a binding pad which are positioned in a binding area and used for a touch part, then an OLED layer is manufactured on the TFT layer, and finally the touch layer is manufactured on the OLED layer; wherein, the touch layer comprises a first insulating layer, a bridge point layer, a second insulating layer, an electrode circuit layer and a protective layer which are sequentially arranged from bottom to top, wherein, the bridge point layer comprises a plurality of metal bridges in the pixel region, the electrode circuit layer comprises a touch driving electrode, a touch sensing electrode and a touch connecting line, the touch driving electrode or the touch sensing electrode is connected with the metal bridge through a first contact hole which penetrates through the second insulating layer, the touch connecting line is connected with the touch lead wire in the binding region through a second contact hole which penetrates through the first insulating layer and the second insulating layer, therefore, when the etching process is carried out, because the depth of the pixel region and the depth of the metal binding region which need to be etched are different, the prior art generally adopts two light masks to respectively carry out the etching process on the first insulating layer and the second insulating layer in the touch layer so as to form via holes with different depths in the via holes at two ends of the metal bridge and the metal binding region, therefore, the conventional manufacturing process of the touch layer requires at least 5 photo-masking processes, but after each photo-masking process is completed, the portions of the SD layer used for the touch leads and the bonding pads are etched and eroded and then exposed, so that the surface of the SD layer is damaged or oxidized, and the electrical performance is reduced or even fails.
In addition, due to the water-repelling property of the OLED, the touch layer should be fabricated on the OLED layer to avoid excessive contact with the wet etching process, and the conventional etching process in the touch technology mainly employs a wet process, and although the dry process can avoid the wet contact, other technical problems may be caused.
Disclosure of Invention
The invention aims to provide a method for manufacturing an OLED touch display screen, which is characterized in that a first insulating layer and a second insulating layer are subjected to dry etching together, so that the same-process manufacturing of contact holes with two different depths is realized, the production process is simplified, the equipment resources are saved, meanwhile, the pre-protection effect on a source drain electrode layer can be realized, and the oxidation or damage of the source drain electrode layer is avoided.
In order to achieve the above object, the present invention provides a method for manufacturing an OLED touch display screen, where the OLED touch display screen includes a pixel area located in a middle portion and a binding area located outside the pixel area, and the method includes the following steps:
step S1, providing a substrate, and sequentially forming a TFT layer and an OLED light-emitting layer on the substrate;
step S2, depositing and forming a first insulating layer on the OLED light emitting layer;
step S3, depositing and patterning a bridge point layer on the first insulating layer;
step S4, depositing on the bridge point layer and the first insulating layer to form a second insulating layer, coating a photoresist material on the second insulating layer, exposing and developing the photoresist material to obtain a photoresist layer;
step S5, using the photoresist layer as a shielding layer, performing dry etching on the first insulating layer and the second insulating layer to form a first contact hole penetrating the second insulating layer in the pixel region corresponding to the bridge point layer and a second contact hole penetrating the first insulating layer and the second insulating layer in the binding region, wherein the dry etching process comprises etching the first insulating layer and the second insulating layer with a first etching gas until the first contact hole is formed or the thickness of the second insulating layer exposed by the photoresist layer is less than that of the second insulating layer exposed by the photoresist layer
Then, continuously etching the first insulating layer and the second insulating layer through second etching gas until the first contact hole and the second contact hole are formed, wherein the etching selection ratio of the second etching gas to the first insulating layer and the bridge point layer is more than 5;
step S6, depositing and patterning an electrode circuit layer on the second insulating layer;
step S7 is to form a protective layer on the electrode wiring layer and the second insulating layer.
In step S5, the etching rate of the second insulating layer by the first etching gas is greater than that of the first etching gas
The etching selection ratio of the second etching gas to the first insulating layer and the bridge point layer is larger than that of the first etching gas to the first insulating layer and the bridge point layer.
In step S5, the first etching gas includes sulfur hexafluoride and oxygen.
In the step S5, the second etching gas includes chloroform.
The first insulating layer and the second insulating layer are made of silicon nitride.
In the step S1, the TFT layer includes a source/drain electrode layer, and the source/drain electrode layer includes a touch lead located in the binding region;
in step S3, the bridge dot layer includes a plurality of metal bridges located in the pixel region;
in step S6, the electrode circuit layer includes at least two first electrodes, at least one second electrode, and a plurality of third electrodes, where the first electrodes are connected to the metal bridge through the first contact holes, and the third electrodes are connected to the touch leads in the bonding area through the second contact holes.
The specific process of patterning the bridge point layer in step S3 includes a photoresist coating step, an exposure step, a developing step, an etching step, and a photoresist stripping step, which are performed in sequence, wherein the etching step of patterning the bridge point layer is performed by dry etching.
The specific process of patterning the electrode circuit layer in step S6 includes a photoresist coating step, an exposure step, a developing step, an etching step, and a photoresist stripping step, which are performed in sequence, wherein the etching step of patterning the electrode circuit layer is performed by dry etching.
In the step S7, the protective layer is made of an inorganic material, and the specific process of forming the protective layer includes a step of depositing an inorganic material film, a step of coating a photoresist, a step of exposing, a step of developing, a step of etching, and a step of removing the photoresist, in which the step of etching to form the protective layer is performed by dry etching.
In step S7, the protective layer is made of an organic material, and the specific process of forming the protective layer includes an organic material coating step, an exposure step, and a developing step, which are performed in sequence.
The invention has the beneficial effects that: compared with the prior art, when the touch layer is manufactured, the first insulating layer is not etched after the first insulating layer is formed through deposition and before the bridge point layer is formed through deposition, and the first insulating layer and the second insulating layer are etched together through the cooperation of two etching gases after the second insulating layer is formed through deposition, so that the same-process manufacturing of contact holes with two different depths in the touch layer is realized, the corrosion of a wet etching process to the OLED is effectively reduced, the production process is simplified, the production capacity of equipment is improved, meanwhile, the pre-protection effect on a touch lead and a binding pad in a source drain electrode layer can be realized, and the function failure caused by corrosion or oxidation is avoided.
For a better understanding of the nature and technical aspects of the present invention, reference should be made to the following detailed description of the invention, taken in conjunction with the accompanying drawings, which are provided for purposes of illustration and description and are not intended to limit the invention.
Drawings
The technical solution and other advantages of the present invention will become apparent from the following detailed description of specific embodiments of the present invention, which is to be read in connection with the accompanying drawings.
In the drawings, there is shown in the drawings,
FIG. 1 is a schematic flow chart of a method for manufacturing an OLED touch display screen according to the present invention;
FIG. 2 is a schematic diagram of step S1 of the method for manufacturing an OLED touch display screen according to the present invention;
FIG. 3 is a schematic diagram of step S2 of the method for manufacturing an OLED touch display screen according to the present invention;
FIG. 4 is a schematic diagram of step S3 of the method for manufacturing an OLED touch display screen according to the present invention;
FIG. 5 is a schematic diagram of step S4 of the method for manufacturing an OLED touch display screen according to the present invention;
6-8 schematic diagrams of step S5 of the method for manufacturing an OLED touch display screen according to the present invention;
FIG. 9 is a schematic diagram of step S6 of the method for manufacturing an OLED touch display screen according to the present invention;
FIG. 10 is a schematic diagram of step S7 of the method for manufacturing an OLED touch display screen according to the present invention; .
Detailed Description
To further illustrate the technical means and effects of the present invention, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Referring to fig. 1, the present invention provides a method for manufacturing an OLED touch display panel, where the OLED touch display panel includes a pixel area located in a middle portion and a binding area located outside the pixel area, and the method includes the following steps:
step S1, as shown in fig. 2, provides a substrate 90, and sequentially forms the TFT layer 10 and the OLED light emitting layer 20 on the substrate 90.
Specifically, in step S1, the TFT layer 10 includes a buffer layer, an active layer, a gate insulating layer, a gate electrode layer, an interlayer insulating layer, a source/drain electrode layer 11, and a planarization layer, where the source/drain electrode layer 11 includes a touch lead 111 and a bonding pad located in a bonding region.
Specifically, in step S1, the OLED light emitting layer 20 includes an anode layer, a pixel defining layer, an organic light emitting function layer, and a cathode layer.
Step S2, as shown in fig. 3, deposits and forms a first insulating layer 31 on the OLED light emitting layer 20. The first insulating layer 31 is used for processing the adhesion of the interface between the touch layer and the OLED light emitting layer 20, improving the surface quality, and protecting the source/drain electrode layer 11.
Specifically, the material of the first insulating layer 31 is silicon nitride (SiNx).
Step S3, as shown in fig. 4, deposits and patterns the bridge dot layer 32 on the first insulating layer 31 to form a bridge dot pattern.
Specifically, in the step S3, the bridge dot layer 32 includes a plurality of metal bridges 321 located in the pixel region.
Specifically, the specific process of patterning the bridge point layer 32 in step S3 includes a photoresist coating step, an exposure step, a developing step, an etching step, and a photoresist stripping step, which are performed in sequence, where the etching step of patterning the bridge point layer 32 is performed by dry etching.
Step S4, as shown in fig. 5, a second insulating layer 33 for protecting the bridge point layer 32 is deposited and formed on the bridge point layer 32 and the first insulating layer 31, a photoresist material is coated on the second insulating layer 33, and the photoresist material is exposed and developed to obtain a photoresist layer 70.
Specifically, the material of the second insulating layer 33 is silicon nitride.
Step S5, as shown in fig. 6-8, dry etching the first insulating layer 31 and the second insulating layer 33 by using the photoresist layer 70 as a shielding layer to form a first contact hole 301 penetrating the second insulating layer 33 in the pixel region corresponding to the bridge point layer 32 and a second contact hole 302 penetrating the first insulating layer 31 and the second insulating layer 33 in the bonding region, wherein the dry etching process is specifically to first etch the first insulating layer 31 and the second insulating layer 33 by using a first etching gas until the first contact hole 301 is formed or until the second contact hole 302 is formedForming a first contact hole 301 (the thickness of the second insulating layer 33 exposed by the photoresist layer 70 is less than that of the first contact hole)
) Then, the first insulating layer 31 and the second insulating layer 33 are continuously etched by a second etching gas until the first contact hole 301 and the second contact hole 302 are formed, wherein the etching selectivity of the second etching gas to the first insulating layer 31 and the bridge point layer 32 is greater than 5.
Specifically, in the step S5, the etching rate of the second insulating layer 33 by the first etching gas should be greater, specifically greater than
The etching selectivity of the second etching gas to the first insulating layer 31 and the bridge point layer 32 is greater than the etching selectivity of the first etching gas to the first insulating layer 31 and the bridge point layer 32.
Specifically, in the present embodiment, in the step S5, the first etching gas includes sulfur hexafluoride (SF)6) And oxygen (O)2) (ii) a The second etching gas comprises chloroform (CHCl)3) The specific reaction principle is as follows:
SF6+O2:
SF6→SF5 *，SF4 *，SF3 *，SF2 *，SF*，F*；
S↑+O2↑→SO2↑；
SiNx+F*→SiF4↑+N2↑。
CHCl3:
CHCL3→CHCl2 *，CCl3 *，Cl*，H*；
H*+Cl*→HCl↑；
SiNx+Cl*→SiF4↑+N2↑。
it should be noted that, becauseThe first contact hole 301 for forming the pixel region only needs to etch a layer of SiNx (the second insulating layer 33), and the second contact hole 302 for forming the binding region only needs to etch two layers of SiNx (the first insulating layer 31 and the second insulating layer 33), so that SF with high SiNx etching rate is firstly introduced during etching6(or CF)4) Etching gas mainly due to SF6The etching selectivity ratio of SiNx to metal is small, and the etching rate of SiNx to metal is almost equivalent, so that the continuous use of SF is not suitable6Etching is performed. At or near the completion of the etching of the first contact hole 301, the strain is much greater for SiNx and metal etches, e.g., in CHCl3Predominantly etching gas (CHCl)3The etching rate of the metal Ti is about
) To remove the remaining SiNx.
In addition, in this embodiment, CHCl is not suitable for direct use3The first insulating layer 31 and the second insulating layer 33 are etched as an etching gas because the etching rate of SiNx is relatively small (about)
) If used directly, the process time is too long. And SF6The reaction speed to SiNx is fast (about 200 a/s), the etching time is shorter, but the corrosion to metal is more serious, so that the two etching gases cooperate with each other to complete the whole process etching, and at this time, part of metal in the bridge point layer 32 is slightly over-etched without affecting the whole performance.
Step S6, as shown in fig. 9, deposits and patterns an electrode wiring layer 34 on the second insulating layer 33.
Specifically, in the step S6, the electrode circuit layer 34 includes at least two first electrodes 341, at least one second electrode 342, and a plurality of third electrodes 343; the first electrode 341 is one of a touch driving electrode and a touch sensing electrode, the second electrode 342 is the other of the touch driving electrode and the touch sensing electrode, the first electrode 341 is connected to the metal bridge 321 through the first contact hole 301, and the third electrode 343 is connected to the touch lead 111 in the bonding region through the second contact hole 302.
Specifically, the specific process of patterning the electrode circuit layer 34 in step S6 includes a photoresist coating step, an exposure step, a developing step, an etching step, and a photoresist stripping step, which are performed in sequence, wherein the etching step of patterning the electrode circuit layer 34 is performed by dry etching.
Step S7, as shown in fig. 10, a protection layer 35 is formed on the electrode circuit layer 34 and the second insulation layer 33, so as to obtain a touch layer including the first insulation layer 31, the bridge point layer 32, the second insulation layer 33, the electrode circuit layer 34, and the protection layer 35. The protective layer 35 covers the OLED light emitting layer 20, exposing only the bonding pad pattern.
Specifically, in step S7, the protection layer 35 is an inorganic protection layer made of an inorganic material, and the specific process of forming the protection layer 35 includes a step of depositing an inorganic material film, a step of coating a photoresist, a step of exposing to light, a step of developing, a step of etching, and a step of removing the photoresist, which are sequentially performed, wherein the step of etching to form the protection layer 35 is performed by dry etching. Alternatively, the first and second electrodes may be,
the protective layer 35 is an organic protective layer made of an organic material, and the step S7 is performed by a yellow light process, and includes an organic material coating step, an exposure step, and a development step, which are performed in this order.
Compared with the prior art, the method for manufacturing the OLED touch display screen does not etch the first insulating layer 31 after the first insulating layer 31 is formed by deposition and before the bridge point layer 32 is formed by deposition, and dry etching is performed on the first insulating layer 31 and the second insulating layer 33 together by matching two etching gases after the second insulating layer 33 is formed by deposition, so that the same manufacturing process of two contact holes with different depths in the touch layer is realized, the corrosion of a wet etching process on the OLED is effectively reduced, the production process is simplified, the production capacity of equipment is improved, meanwhile, the pre-protection effect on the touch lead 111 and the binding pad in the source drain electrode layer 11 can be realized, and the function failure caused by over-corrosion or oxidation is avoided.
In summary, according to the method for manufacturing the OLED touch display screen provided by the invention, the TFT layer, the OLED layer, and the touch layer are sequentially formed on the substrate, and compared with the prior art, when the touch layer is manufactured, the first insulating layer is not etched after the first insulating layer is formed by deposition and before the bridge point layer is formed by deposition, and the first insulating layer and the second insulating layer are etched together by using two etching gases in a matching manner after the second insulating layer is formed by deposition, so that the same process manufacturing of two contact holes with different depths in the touch layer is realized, erosion of the wet etching process to the OLED is effectively reduced, the production process is simplified, the production capacity of equipment is improved, and meanwhile, the pre-protection effect on the touch lead and the binding pad in the source and drain electrode layers can be realized, and the function failure caused by over-etching or oxidation is avoided.
As described above, it will be apparent to those skilled in the art that other various changes and modifications may be made based on the technical solution and concept of the present invention, and all such changes and modifications are intended to fall within the scope of the appended claims.
Claims (9)
1. The manufacturing method of the OLED touch display screen is characterized by comprising the following steps of:
step S1, providing a substrate (90), and sequentially forming a TFT layer (10) and an OLED light-emitting layer (20) on the substrate (90);
step S2, depositing and forming a first insulating layer (31) on the OLED light-emitting layer (20);
step S3, depositing and patterning a bridge point layer (32) on the first insulating layer (31);
step S4, depositing and forming a second insulating layer (33) on the bridge point layer (32) and the first insulating layer (31), coating a photoresist material on the second insulating layer (33), and exposing and developing the photoresist material to obtain a photoresist layer (70);
step S5, using the photoresist layer (70) as a shielding layerThe first insulating layer (31) and the second insulating layer (33) are subjected to dry etching to form a first contact hole (301) penetrating through the second insulating layer (33) in the pixel region corresponding to the bridge point layer (32) and a second contact hole (302) penetrating through the first insulating layer (31) and the second insulating layer (33) in the binding region, wherein the dry etching is specifically carried out by firstly etching the first insulating layer (31) and the second insulating layer (33) by using a first etching gas until the first contact hole (301) is formed or the thickness of the second insulating layer (33) exposed by the photoresist layer (70) is smaller than that of the second insulating layer (33)
Then, continuously etching the first insulating layer (31) and the second insulating layer (33) through a second etching gas until a first contact hole (301) and a second contact hole (302) are formed, wherein the etching selection ratio of the second etching gas to the first insulating layer (31) and the bridge point layer (32) is more than 5;
step S6, depositing and patterning an electrode circuit layer (34) on the second insulating layer (33);
step S7, forming a protective layer (35) on the electrode circuit layer (34) and the second insulating layer (33);
in the step S5, the etching rate of the second insulating layer (33) by the first etching gas is greater than that of the first etching gas
The etching selection ratio of the second etching gas to the first insulating layer (31) and the bridge point layer (32) is larger than that of the first etching gas to the first insulating layer (31) and the bridge point layer (32).
2. The method for manufacturing the OLED touch display screen according to claim 1, wherein in the step S5, the first etching gas includes sulfur hexafluoride and oxygen.
3. The method for manufacturing the OLED touch display screen according to claim 1, wherein in the step S5, the second etching gas includes chloroform.
4. The method for manufacturing the OLED touch display screen according to claim 1, wherein the first insulating layer (31) and the second insulating layer (33) are made of silicon nitride.
5. The method for manufacturing the OLED touch display screen according to claim 1, wherein in the step S1, the TFT layer (10) includes a source/drain electrode layer (11), and the source/drain electrode layer (11) includes a touch lead (111) located in the bonding region;
in the step S3, the bridge dot layer (32) includes a plurality of metal bridges (321) located in the pixel region;
in the step S6, the electrode circuit layer (34) includes at least two first electrodes (341), at least one second electrode (342), and a plurality of third electrodes (343), wherein the first electrodes (341) are connected to the metal bridge (321) through the first contact holes (301), and the third electrodes (343) are connected to the touch leads (111) in the bonding region through the second contact holes (302).
6. The method for manufacturing the OLED touch display screen according to claim 1, wherein the specific process of patterning the bridge point layer (32) in the step S3 includes a photoresist coating step, an exposure step, a developing step, an etching step, and a photoresist stripping step, which are sequentially performed, wherein the etching step of patterning the bridge point layer (32) is performed by dry etching.
7. The method for manufacturing the OLED touch display screen according to claim 1, wherein the specific process of patterning the electrode circuit layer (34) in the step S6 includes a photoresist coating step, an exposure step, a developing step, an etching step, and a photoresist stripping step, which are sequentially performed, wherein the etching step of patterning the electrode circuit layer (34) is performed by dry etching.
8. The method for manufacturing the OLED touch display screen according to claim 1, wherein in the step S7, the protective layer (35) is made of an inorganic material, and the specific process for forming the protective layer (35) includes a step of depositing an inorganic material film, a step of coating a photoresist, a step of exposing, a step of developing, a step of etching, and a step of removing the photoresist, which are sequentially performed, wherein the step of etching for forming the protective layer (35) is performed by dry etching.
9. The method for manufacturing the OLED touch display screen according to claim 1, wherein in the step S7, the protective layer (35) is made of an organic material, and the specific process for forming the protective layer (35) includes an organic material coating step, an exposure step, and a developing step, which are sequentially performed.
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| CN201811361832.0A CN109616496B (en) | 2018-11-15 | 2018-11-15 | Manufacturing method of OLED touch display screen |
| US16/327,833 US10727284B2 (en) | 2018-11-15 | 2018-12-03 | Method of fabricating organic light-emitting diode touch display screen |
| PCT/CN2018/119017 WO2020098010A1 (en) | 2018-11-15 | 2018-12-03 | Method for manufacturing oled touch display screen |
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| US10727284B2 (en) * | 2018-11-15 | 2020-07-28 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method of fabricating organic light-emitting diode touch display screen |
| CN111668279B (en) * | 2020-06-30 | 2022-09-13 | 湖北长江新型显示产业创新中心有限公司 | Display panel and display device |
| CN113990886A (en) * | 2021-10-27 | 2022-01-28 | 昆山国显光电有限公司 | Display panel and manufacturing method thereof |
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| CN109616496A (en) | 2019-04-12 |
| WO2020098010A1 (en) | 2020-05-22 |
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