CN109616476A - Active switch and preparation method thereof, display device - Google Patents
Active switch and preparation method thereof, display device Download PDFInfo
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- CN109616476A CN109616476A CN201811542632.5A CN201811542632A CN109616476A CN 109616476 A CN109616476 A CN 109616476A CN 201811542632 A CN201811542632 A CN 201811542632A CN 109616476 A CN109616476 A CN 109616476A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
Abstract
This application involves a kind of active switch and preparation method thereof, display device, the production method of the active switch includes: to provide a substrate, and form the first metal layer on the substrate, and carry out patterned process to the first metal layer, forms grid；Gate insulating layer, active layer, doped layer and source-drain electrode are sequentially formed on the grid；Wherein, the active layer, doped layer, source-drain electrode and a channel region are formed using wet-etching technology twice and twice dry etch process；Gas pretreatment is carried out to the channel region under predetermined power；Wherein, by the power regulation of gas pretreatment device to the predetermined power；The channel region is placed in the mixed atmosphere of nitrogen and ammonia under the predetermined power and is heated.The application can effectively reduce the light leakage current of active switch device, improve ghost phenomena.
Description
Technical field
This application involves field of display technology, more particularly to a kind of active switch and preparation method thereof, display device.
Background technique
As the working performance to display panel have particularly significant effect switching device, be in display technology one it is non-
Want important Primary Component.With display technology iteration develop, higher performance, high image quality and large-sized display device at
For development trend, and directly affect the factor of user's viewing experience and shopping experience.For high-performance, it is desirable to display device
With higher performance, require have high performance switching device in display device from one aspect.
And in the processing procedure of common amorphous silicon switching device, it is all that (Back Channel Etching carries on the back ditch using BCE
Road etching) type structure, the relative inexpensiveness of this structure and relative to ES (Etching stop, etch stop layer) type knot
It is simpler for the technique of structure.But when carrying out back channel etching (N+cutting) using BCE type structure, active layer (is partly led
Body layer) it is usually destroyed and generates more dangling bonds (Dangling Bond) and weak bond (Weak Bond), weak bond is easy in light
According to lower decomposition, dangling bonds may cause the unstability of switching device, cause the leakage current of switching device to increase, and then cause to show
There is IS (image sticking, ghost) phenomenon when reliability is tested in showing device.
Summary of the invention
Based on this, it is necessary to be directed to and use switching device leakage current made of BCE type structure larger, and then display is caused to fill
It sets and the problem of IS phenomenon occurs when reliability test, a kind of active switch and preparation method thereof, display device are provided.
A kind of production method of active switch, the production method of the active switch include:
One substrate is provided, and forms the first metal layer on the substrate, and the first metal layer is patterned
Processing forms grid；
Gate insulating layer, active layer, doped layer and source-drain electrode are sequentially formed on the grid；
Wherein, the active layer, doped layer, source and drain are formed using wet-etching technology twice and twice dry etch process
Pole and a channel region, the channel region is through the doped layer and is partially through to the active layer；
Gas pretreatment is carried out to the channel region under predetermined power；Wherein, by the power tune of gas pretreatment device
It saves to the predetermined power；
The channel region is placed in the mixed atmosphere of nitrogen and ammonia under the predetermined power and is heated.
In one of the embodiments, it is described sequentially formed on the grid gate insulating layer, active layer, doped layer and
The step of source-drain electrode, comprising:
Gate insulating layer, active film layer, doping film layer and second metal layer are sequentially depositing on the grid；
It is coated with a layer photoresist in the second metal layer, and patterned process is carried out to the photoresist；
First time wet-etching technology is used to perform etching to form the second sub- metal layer the second metal layer；
Use first time dry etch process to the active film layer and doping film layer perform etching with formed active layer and
Doped layer is simultaneously ashed the photoresist；
Second of wet-etching technology is used to perform etching to form source-drain electrode the described second sub- metal layer；
Second of dry etch process is used to perform etching the active layer and doped layer to form channel region, the ditch
Road area is through the doped layer and is partially through to the active layer.
Heating in the mixed atmosphere of the nitrogen and ammonia -40 seconds 0 second in one of the embodiments,.
It is described in one of the embodiments, that the pretreated step of gas is carried out to the channel region under predetermined power,
Further include:
Under the predetermined power by the channel region be placed in hydrogen or nitrogen or ammonia or nitrous oxide atmosphere into
Row heat treatment.
It is heated -30 seconds 0 second in the hydrogen atmosphere in one of the embodiments, heats 0 in the nitrogen atmosphere
It -20 seconds seconds, heats -20 seconds 0 second in the ammonia atmosphere, is heated -20 seconds 0 second in the nitrous oxide atmosphere.
The gas pretreatment device is chemical vapor deposition stove in one of the embodiments,.
The predetermined power range is 6KW-10KW in one of the embodiments,.
A kind of active switch is manufactured using the production method of the active switch as described in aforementioned, the active switch
Include:
Substrate；
Grid is formed on the substrate；
Gate insulating layer is formed on the substrate, wherein the gate insulating layer covers the grid；
Active layer is formed on the gate insulating layer；
Doped layer is formed on the active layer；And
The source electrode being formed on the doped layer and drain electrode；
Wherein, a channel region is located at the middle part of the doped layer, and the channel region is through the doped layer and partially runs through
To the active layer, the source electrode and drain electrode are positioned at the two sides of the channel region.
The thickness range of the grid is 3000 angstroms -5000 angstroms in one of the embodiments,.
A kind of display device, including the active switch as described in aforementioned.
The production method of above-mentioned active switch, dry etch process is formed by using wet-etching technology twice and twice
Active switch can shorten the processing time of active switch, and relative inexpensiveness.Further, by being carried out to channel region
Gas pretreatment, i.e., carry out gas treatment to channel region before depositing operation next time, specifically, by adjusting at current gas
Power and channel region is placed in the mixed atmosphere of nitrogen and ammonia in reason device carry out heat treatment can repair channel region by
It is damaged caused by etching, while the weak bond in amorphous silicon can also be reduced, the irradiation and irradiation for enhancing active switch are stablized
Property, light leakage current is reduced, and then improve and the phenomenon that IS occur in the reliability test of display device.
Detailed description of the invention
Fig. 1 is the production method flow diagram of the active switch in an embodiment；
Fig. 2 is the structural schematic diagram of the active switch in an embodiment；
Fig. 3 is the partial structure diagram formed in Fig. 1 according to step S100；
Fig. 4 is the partial structure diagram formed in Fig. 1 according to step S200；
Fig. 5 is the partial structure diagram formed in Fig. 1 according to step S200；
Fig. 6 is the partial structure diagram formed in Fig. 1 according to step S200；
Fig. 7 is the partial structure diagram formed in Fig. 1 according to step S200；
Fig. 8 is the structural schematic diagram of the active switch in another embodiment.
Specific embodiment
The application in order to facilitate understanding is described more fully the application below with reference to relevant drawings.In attached drawing
Give the better embodiment of the application.But the application can realize in many different forms, however it is not limited to herein
Described embodiment.On the contrary, the purpose of providing these embodiments is that making to understand more disclosure of this application
Add thorough and comprehensive.
It should be noted that it can directly on the other element when element is referred to as " being fixed on " another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it, which can be, is directly connected to
To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " horizontal ", " left side ",
" right side " and similar statement for illustrative purposes only, are not meant to be the only embodiment.
Unless otherwise defined, all technical and scientific terms used herein and the technical field for belonging to the application
The normally understood meaning of technical staff is identical.The term used in the description of the present application is intended merely to description tool herein
The purpose of the embodiment of body, it is not intended that in limitation the application.
Referring to Fig. 1, for the production method flow diagram of the active switch in an embodiment.The production of the active switch
Method may include step: S100-S300.
Step S100 provides a substrate, and deposits the first metal layer on the substrate, and to the first metal layer into
Row patterned process forms grid.
Specifically, it please assist refering to Fig. 3, substrate 10 can be glass substrate or plastic base, wherein glass substrate can be with
For no alkali borosilicate ultra-thin glass, no alkali borosilicate glass physical characteristic with higher, preferable corrosion resistance, compared with
High thermal stability and lower density and higher elasticity modulus.(Fig. 3 is not marked deposition the first metal layer on the substrate 10
Show) it can be rf magnetron sputtering, thermal evaporation, vacuum electronic beam evaporation and plasma reinforced chemical vapour deposition technique.The
One metal layer (Fig. 3 is not indicated) can be the heap stack combination of one or more of molybdenum, titanium, aluminium and copper.Patterned process can
Required pattern is formed by photoetching treatment to be, that is, grid 20.The thickness range of grid 20 can be 3000 angstrom -5000
Angstrom, optionally, the thickness of grid 20 can be 3000 angstroms -4000 angstroms, further, the thickness of grid 20 can for 4000 angstroms -
5000 angstroms.It is appreciated that the thickness of grid 20 can be selected and be adjusted according to practical situations and properties of product,
This is not further limited.
Step S200 sequentially forms gate insulating layer, active layer, doped layer and source-drain electrode on the grid；Wherein, it adopts
The active layer, doped layer, source-drain electrode and a channel region are formed with wet-etching technology twice and twice dry etch process,
The channel region is through the doped layer and is partially through to the active layer.
Specifically, gate insulating layer 30, active film layer 40, doping film layer 50 and the second gold medal can be sequentially depositing on grid 20
Belong to layer (figure does not indicate).Wherein, depositing operation may include rf magnetron sputtering, thermal evaporation, vacuum electronic beam evaporation and wait
Plasma enhanced chemical vapor depositing operation.Then being coated with one layer of photoresist layer in second metal layer (figure does not indicate) top, (figure is not marked
Show), processing is patterned to photoresist layer (figure does not indicate) using one of light shield technique, obtains the photoresist with predetermined pattern
70.On this basis, first time wet-etching technology is used to perform etching to form second second metal layer (figure does not indicate)
Sub- metal layer 60, can refer to structure shown in Fig. 4.Then again using first time dry etch process to active film layer 40 and doping
Film layer 50 performs etching to form active layer 40A and doped layer 50A, while carrying out ashing processing to photoresist 70, obtains such as Fig. 5
Shown in structure, the ashing of photoresist just refers to be fallen photoresist as the target etch that is etched, generally use oxygen and photoetching
Glue reaction, generates volatile materials.Then use again second of wet-etching technology to the second sub- metal layer 60 perform etching with
Source electrode 610, drain electrode 620 are formed, can refer to Fig. 6.It is finally etching barrier layer with source electrode 610 and drain electrode 620, it is dry using second
Method etching technics performs etching doped layer 50A and active layer 40A, forms a channel region 80, can refer to Fig. 7, wherein channel region
80 run through doped layer 50A and are partially through to active layer 40A." partially running through " does not etch away positioned at the second groove all
In active layer part because active layer cannot be etched away all as conductive medium.It is appreciated that for " portion
Point " specific thickness, can make a choice and adjust according to practical condition and properties of product.Second metal layer (do not mark by figure
Show) source electrode 610 and drain electrode 620 are partitioned by channel region 80, source electrode 610 and drain electrode 620 are located at the two sides of channel region 80.
In one embodiment, the material of gate insulating layer 30 can be one of silica, silicon nitride or the two
Combination, i.e. gate insulating layer 30 can be silica, is also possible to silicon nitride, can also be the mixing of silica and silicon nitride
Object.
In one embodiment, by taking plasma reinforced chemical vapour deposition as an example.SiH can be used4Gas to be formed to deposit
Active layer 40A, using PH3And SiH4Gas to form doped layer 50A to deposit.Meanwhile the temperature for depositing doped layer 50A can be
300 DEG C -400 DEG C, optionally, the temperature for depositing doped layer 50A can be 300 DEG C -360 DEG C, and the temperature of deposition doped layer 50A can
Think 340 DEG C -360 DEG C.Further, when forming doped layer 50A, depositing operation is also used.
Step S300 carries out gas pretreatment to the channel region under predetermined power；Wherein, by gas pretreatment device
Power regulation to the predetermined power；The channel region is placed in the mixed atmosphere of nitrogen and ammonia under the predetermined power
In heated.
Specifically, after carrying out second of dry etching and forming channel region 80, it will cause the damage of channel region 80, simultaneously
More weak bond can be also generated at the interface for the active layer 40A being etched, therefore, in order to repair the damage of channel region 80, and
Reduce the weak bond at the interface active layer 40A being etched.Gas pretreatment can be carried out to channel region 80 under predetermined power.Specifically
, it,, can be to channel region 80 before depositing operation next time after forming channel region 80 by taking chemical vapor deposition process as an example
Gas heat treatment is carried out, can be specifically placed in gas pretreatment device, gas pretreatment device may be, for example, chemical vapor deposition
Product furnace, while adjusting the power of chemical vapor deposition stove to predetermined power, then to leading to nitrogen in chemical vapor deposition stove
With the mixed atmosphere of ammonia, to carry out gas pretreatment to channel region 80, after the completion of gas pretreatment, then in chemical vapor deposition
Depositing operation next time is carried out in furnace.It is appreciated that for specific heating temperature, it can be according to the reality of those skilled in the art
The condition of production and properties of product are adjusted, and are not limited further herein.Further, " adjusting " can be in current function
It is increasedd or decreased on the basis of rate, in this embodiment, the power bracket of current gas pretreating process can be 10KW-
18KW, optionally, current power can be 12KW, and " adjusting current power " is to reduce current power, the power bracket after reduction,
It that is to say that the range of predetermined power can be 6KW-10KW, optionally, the power after reduction is 8KW.I.e. first by chemical vapor deposition
The power of the power supply of product furnace is reduced to 8KW by 12KW, and then under this power (8KW), channel region 80 is placed in nitrogen and ammonia
Mixed atmosphere in heated.Heat -40 seconds 0 second in the mixed atmosphere of nitrogen and ammonia, optionally, in nitrogen and
It is heated 25 seconds in the mixed atmosphere of ammonia.By adjust chemical vapor deposition stove power and by channel region be placed in nitrogen and
Heat treatment is carried out in the mixed atmosphere of ammonia can repair channel region damage as caused by etching, reduce light leakage current.
Above-described embodiment can by using wet-etching technology twice and the active switch of dry etch process formation twice
Shorten the processing time of active switch, and relative inexpensiveness.Further, by carrying out gas pretreatment to channel region,
Gas treatment is carried out to channel region i.e. before depositing operation next time, specifically, by reducing gas pretreatment device (chemical gas
Phase cvd furnace) power and channel region is placed in the mixed atmosphere of nitrogen and ammonia carry out heat treatment can repair channel region by
It is damaged caused by etching, while the weak bond in amorphous silicon can also be reduced, the irradiation and irradiation for enhancing active switch are stablized
Property, light leakage current is reduced, and then improve and the phenomenon that IS occur in the reliability test of display device.
In one embodiment, carrying out gas pretreatment to the channel region under predetermined power can also be described pre-
Heat if the channel region is placed in hydrogen or nitrogen or ammonia or nitrous oxide atmosphere under power.It can manage
Solution, for specific heating temperature, can be adjusted according to the practical condition and properties of product of those skilled in the art,
This is not limited further.Specifically, " adjusting " can be increaseds or decreases on the basis of current power, specific real at this
It applies in example, the power bracket of current gas treatment process can be 10KW-18KW, and optionally, current power can be 12KW,
" adjusting " is to reduce current power, and the power bracket after reduction that is to say that predetermined power can be 6KW-10KW, optionally, subtract
Power after small is 8KW.The power of chemical vapor deposition stove is first reduced to 8KW by 12KW, then in this power
Under (8KW), channel region 80 is placed in hydrogen or nitrogen or ammonia or nitrous oxide atmosphere and is heated.In other words
It says, channel region 80 can be placed in the atmosphere of hydrogen and be heated；Channel region 80 can also be placed in the atmosphere of nitrogen into
Row heat treatment；Channel region 80 can be also placed in the atmosphere of ammonia and be heated；Also channel region 80 can be placed in an oxygen
Change and is heated in phenodiazine.Further, it can be heated in the atmosphere of hydrogen -30 seconds 0 second, optionally, in hydrogen
It is heated 20 seconds in atmosphere.Further, it can heat in nitrogen -20 seconds 0 second, optionally, be heated 15 seconds in nitrogen；?
It can heat in ammonia -20 seconds 0 second, optionally, be heated 10 seconds in ammonia；0-20 is heated in the atmosphere of nitrous oxide
Second, optionally, heated 15 seconds in the atmosphere of nitrous oxide.By reducing the pretreated power of gas and being placed in channel region
Heat treatment is carried out in hydrogen or nitrogen or ammonia or nitrous oxide atmosphere can repair channel region damage as caused by etching,
Reduce light leakage current.
In one embodiment, directly channel region 80 can also be heated, it further, can be to channel region 80
Heating -80 seconds 1 second optionally heats channel region 80 25 seconds；Optionally, channel region 80 is heated 10 seconds；Optionally, to ditch
It heats 20 seconds in road area 80；Optionally, channel region 80 is heated 30 seconds；Optionally, channel region 80 is heated 40 seconds；Optionally, right
Channel region 80 heats 50 seconds.It is appreciated that for specific heating temperature, it can be according to the actual production feelings of those skilled in the art
Condition and properties of product are adjusted, and are not limited further herein.
Further, the production method of active switch can also include: to be formed simultaneously protective layer using one of light shield technique
With correspond to the drain electrode above via hole.Further, then using one of light shield technique pixel electrode, the pixel are formed
Electrode passes through the via hole and the drain contact.Wherein, light shield technique is referred to having in aforementioned production method embodiment
Description is closed, is not repeated further herein.Pixel electrode can be indium tin oxide, indium-zinc oxide, aluminium tin-oxide, aluminium zinc
One of oxide, indium germanium zinc oxide are a variety of.
The production method of above-mentioned active switch forms active switch using 4 light shield techniques, compares 5 light shield technique saving
Processing time, reduces the production cost, while reducing a light shield technique.
The structural schematic diagram that Fig. 2 is the active switch in an embodiment is please referred to, which is opened using aforementioned active
The production method embodiment of pass is manufactured.The active switch may include: substrate 10, grid 20, and gate insulating layer 30 is active
Layer 40A, doped layer 50A and source electrode 610, drain electrode 620.Wherein, grid 20 is formed on substrate 10；Gate insulating layer 30 is formed in
On substrate 10, while gate insulating layer 30 covers grid 20；Active layer 40A is formed on gate insulating layer 30；Doped layer 50A shape
At on active layer 40A；Source electrode 610, drain electrode 620 are formed on doped layer 50A.One channel region 80 is located in doped layer 50A
Portion, channel region 80 is through doped layer 50A and is partially through to active layer 40A, and source electrode 610 and drain electrode 620 are located at channel region 80
Two sides.It is appreciated that the active switch in the present embodiment can regard thin film transistor (TFT) as.
Above-mentioned active switch is manufactured by using the production method of aforementioned active switch, and the system of aforementioned active switch
Make method by using wet-etching technology twice and the active switch of dry etch process formation twice, thin film transistor (TFT) can be shortened
Processing time, and relative inexpensiveness.Further, by carrying out gas pretreatment to channel region under predetermined power,
Gas treatment is carried out to channel region i.e. before depositing operation next time, specifically, passing through the power for reducing gas pretreatment device
And channel region is placed in the mixed atmosphere of nitrogen and ammonia carry out heat treatment can repair channel region as etching caused by damage
Wound, while the weak bond in amorphous silicon can also be reduced, enhance the irradiation and irradiation stability of active switch, reduces light electric leakage
Stream, and then improve and the phenomenon that IS occur in the reliability test of display device.
Substrate 10 can be glass substrate or plastic base, wherein glass substrate can be the ultra-thin glass of alkali-free borosilicate
Glass, no alkali borosilicate glass physical characteristic with higher, preferable corrosion resistance, higher thermal stability and lower
Density and higher elasticity modulus.
Grid 20 is formed on substrate 10, wherein the formation process of grid 20 may include rf magnetron sputtering, heat steaming
Hair, vacuum electronic beam evaporation and plasma reinforced chemical vapour deposition technique.It is appreciated that the formation process of grid 20 can be with
It is selected and is adjusted according to practical situations and properties of product, be not further limited herein.The material of grid 20
It can be the heap stack combination of one or more of molybdenum, titanium, aluminium and copper；Select molybdenum, titanium, aluminium and copper can as 20 material of grid
To guarantee good electric conductivity.It is appreciated that the material of grid 20 can according to practical situations and properties of product into
Row selection and adjustment, are not further limited herein.The thickness range of grid 20 can be 3000 angstroms -5000 angstroms, optionally,
The thickness of grid 20 can be 3000 angstroms -4000 angstroms, and further, the thickness of grid 20 can be 4000 angstroms -5000 angstroms.It can be with
Understand, the thickness of grid 20 can be selected and be adjusted according to practical situations and properties of product, do not made herein into one
The restriction of step.
Gate insulating layer 30 is formed on substrate 10, and the formation process of gate insulating layer 30 may include that radio frequency magnetron splashes
It penetrates, thermal evaporation, vacuum electronic beam evaporation and plasma reinforced chemical vapour deposition technique.It is appreciated that gate insulating layer 30
Formation process can be selected and be adjusted according to practical situations and properties of product, do not limit further herein
It is fixed.The material of gate insulating layer 30 can be one of silica, silicon nitride or combination, i.e. gate insulating layer 30
It can be silica, be also possible to silicon nitride, can also be the mixture of silica and silicon nitride.It is appreciated that gate insulator
The material of layer 30 can be selected and be adjusted according to practical situations and properties of product, not limited further herein
It is fixed.The thickness of gate insulating layer 30 can be 3500 angstroms -4000 angstroms, and optionally, the thickness of gate insulating layer 30 can be 3500
Angstroms -3700 angstroms, further, the thickness of gate insulating layer 30 can be 3700 angstroms -4000 angstroms.It is appreciated that gate insulating layer
30 thickness can be selected and be adjusted according to practical situations and properties of product, be not further limited herein.
Active layer 40A is formed on gate insulating layer 30, and the formation process of active layer 40A may include that radio frequency magnetron splashes
It penetrates, thermal evaporation, vacuum electronic beam evaporation and plasma reinforced chemical vapour deposition technique.It is appreciated that the shape of active layer 40A
It can be selected and be adjusted according to practical situations and properties of product at technique, be not further limited herein.Have
The material of active layer 40A can be amorphous silicon, and active layer 40A is usually as conductive medium.The thickness of active layer 40A can be
550 angstroms -700 angstroms, optionally, active layer 40A with a thickness of 550 angstroms -600 angstroms, further, the thickness of active layer 40A can be with
It is 600 angstroms -700 angstroms.It is appreciated that the thickness of active layer 40A can be selected according to practical situations and properties of product
It selects and adjusts, be not further limited herein.
Doped layer 50A is formed on active layer 40A, the formation process of doped layer 50A may include rf magnetron sputtering,
Thermal evaporation, vacuum electronic beam evaporation and plasma reinforced chemical vapour deposition technique.It is appreciated that the formation of doped layer 50A
Technique can be selected and be adjusted according to practical situations and properties of product, be not further limited herein.Doping
The thickness of layer 50A can be 400 angstroms, it will be understood that the thickness of doped layer 50A can be according to practical situations and product
It can be carried out selection and adjustment, be not further limited herein.Doped layer 50A can be carries out n-type doping in amorphous silicon layer,
Be also possible in amorphous silicon layer carry out p-type doping, optionally, doped layer 50A be n-type doping is carried out in amorphous silicon layer, meanwhile,
For N-type heavy doping, wherein doping way may include High temperature diffusion and ion implanting.High temperature diffusion is to pass through foreign atom
Gaseous sources or the diffusion of doped oxide or the surface for being deposited to silicon wafer, these impurity concentrations will be from surface to internal dullness
Decline, in High temperature diffusion, the distribution of impurity is mainly determined by high temperature with diffusion time.Ion implanting is i.e. by Doped ions
It is injected in semiconductor in the form of ion beam, impurity concentration has peak Distribution in semiconductor, in ion implanting, Impurity Distribution
Mainly determined by mass of ion and Implantation Energy.N-type doping mainly mixes pentavalent impurity element in semiconductor, such as: phosphorus,
Arsenic.Ion implanting is relative to the advantages of High temperature diffusion: 1, the ion injected is selected by mass analyzer to be chosen
The particle purity is high taken, energy is single, to ensure that doping concentration is not influenced by impurity source purity.In addition, injection process
It is carried out under cleaning, dry vacuum condition, various pollutions are preferably minimized level；2, it can accurately control and be injected into chip
Foreign atom number, implantation dosage is from 10 for adjusting threshold voltage11/cm2To forming the 10 of insulating buried layer17/cm2, range
It is wider.3, when ion implanting, substrate is generally kept under room temperature or temperature environment lower than 400 DEG C.Therefore, as silica,
Silicon nitride, aluminium and photoresist etc. may serve to the masking film alternatively adulterated, make the autoregistration masking skill in device manufacture
Art is more flexible.
Source electrode 610, drain electrode 620 are formed on doped layer 50A, and source electrode 610,620 formation process of draining may include penetrating
Frequency magnetron sputtering, thermal evaporation, vacuum electronic beam evaporation and plasma reinforced chemical vapour deposition technique.It is appreciated that source electrode
610, the formation process of drain electrode 620 can be selected and be adjusted according to practical situations and properties of product, not made herein
It is further to limit.Source electrode 610,620 material of draining can be the storehouse group of one or more of molybdenum, titanium, aluminium and copper
It closes；Select molybdenum, titanium, aluminium and copper that can guarantee good electric conductivity as source electrode 610,620 materials of drain electrode.The source of being appreciated that
Pole 610, drain 620 material can be selected and be adjusted according to practical situations and properties of product, do not make herein into
The restriction of one step.Source electrode 610,620 thickness of draining can be 3500 angstroms -5000 angstroms, optionally, source electrode 610, drain electrode 620
Thickness can be 3500 angstroms -4000 angstroms, further, source electrode 610, drain 620 thickness can be 4000 angstroms -5000 angstroms.
It is appreciated that source electrode 610, drain 620 material can be identical or not identical with thickness, source electrode 610, drain 620 material
Material and thickness can be selected and be adjusted according to practical situations and properties of product, be not further limited herein.
Channel region 80 is located at the middle part of doped layer 50A, and channel region 80 is through doped layer 50A and active layer is run through in part
40A.Source electrode 610 and drain electrode 620 are located in the two sides of channel region 80." running through " can be realized by photoetching or lithographic method,
Photosensitive photoresist is set to exist by exposure and imaging using the mask with a certain layer design configuration specifically, photoetching refers to
Three-dimensional relief pattern is formed on substrate.Etching refers to that under photoresist masking, the film layer for forming micrographics as needed is different, adopts
Selective etch is carried out in film layer with different etching substances and method.In this way, after removing photoresist, three dimensional design figure
It has been transferred in the related film layer of substrate.
Referring to Fig. 8, for the structural schematic diagram of active switch in another embodiment.The active switch may include substrate
10, grid 20, gate insulating layer 30, active layer 40, doped layer 50, source electrode 610, drain electrode 620 and protective layer 90.Wherein, grid
20 are formed on substrate 10；Gate insulating layer 30 is formed on substrate 10, while gate insulating layer 30 covers grid 20；Active layer
40A is formed on gate insulating layer 30；Doped layer 50A is formed on active layer 40A；Source electrode 610, drain electrode 620 are formed in doping
Layer 50A on, protective layer 90 be formed in source electrode 610, drain electrode 620 on；One channel region 80 is located at the middle part of doped layer 50A, channel region
80 run through doped layer 50A and are partially through to active layer 40A, and source electrode 610 and drain electrode 620 are positioned at the two sides of channel region 80, simultaneously
Protective layer 90 covers channel region 80.
It is appreciated that for substrate 10, grid 20, gate insulating layer 30, active layer 40A, doped layer 50A, source electrode 610,
Material, formation process, composition, the thickness etc. of drain electrode 620, are referred to the description of aforementioned active switch embodiment, herein no longer
Further progress repeats.
Protective layer 90 mainly for the protection of switching device from polluting and damaging, specifically, protective layer 90 be also referred to as PV
(Passivation, passivation) layer, the material of protective layer 90 can be the combination of silicon nitride, silica or the two.It can manage
Solution, is not particularly limited the thickness of protective layer 90, those skilled in the art can be according to practical condition and properties of product
It is selected and is adjusted.
Above-mentioned active switch is manufactured by using the production method of aforementioned active switch, and the system of aforementioned active switch
Make method by using wet-etching technology twice and the active switch of dry etch process formation twice, thin film transistor (TFT) can be shortened
Processing time, and relative inexpensiveness.Further, by carrying out gas pretreatment to channel region under predetermined power,
Gas treatment is carried out to channel region i.e. before depositing operation next time, specifically, passing through the power for reducing gas pretreatment device
And channel region is placed in the mixed atmosphere of nitrogen and ammonia carry out heat treatment can repair channel region as etching caused by damage
Wound, while the weak bond in amorphous silicon can also be reduced, enhance the irradiation and irradiation stability of active switch, reduces light electric leakage
Stream, and then improve and the phenomenon that IS occur in the reliability test of display device.
A kind of display device may include the aforementioned active switch embodiment, above-mentioned display device, due to actively opening
Pass is manufactured by using the production method of aforementioned active switch, and the production method of aforementioned active switch is by using twice
Wet-etching technology and twice dry etch process form active switch, when can shorten the processing procedure of active switch (thin film transistor (TFT))
Between, and relative inexpensiveness.Further, by carrying out gas pretreatment to channel region under predetermined power, i.e., next
Gas treatment is carried out to channel region before secondary depositing operation, specifically, by the power for reducing gas pretreatment device and by channel
Area, which is placed in the mixed atmosphere of nitrogen and ammonia heat, can repair channel region damage as caused by etching, simultaneously also
The weak bond in amorphous silicon can be reduced, the irradiation and irradiation stability of active switch are enhanced, reduces light leakage current, and then improve
There is the phenomenon that IS in the reliability test of display device.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The several embodiments of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
The limitation to claim therefore cannot be interpreted as.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the concept of this application, various modifications and improvements can be made, these belong to the protection of the application
Range.Therefore, the scope of protection shall be subject to the appended claims for the application patent.
Claims (10)
1. a kind of production method of active switch, which is characterized in that the production method of the active switch includes:
One substrate is provided, and forms the first metal layer on the substrate, and patterned process is carried out to the first metal layer,
Form grid；
Gate insulating layer, active layer, doped layer and source-drain electrode are sequentially formed on the grid；
Wherein, use wet-etching technology twice and twice dry etch process formed the active layer, doped layer, source-drain electrode with
And a channel region, the channel region is through the doped layer and is partially through to the active layer；
Gas pretreatment is carried out to the channel region under predetermined power；Wherein, extremely by the power regulation of gas pretreatment device
The predetermined power；
The channel region is placed in the mixed atmosphere of nitrogen and ammonia under the predetermined power and is heated.
2. the production method of active switch according to claim 1, which is characterized in that the successively shape on the grid
The step of at gate insulating layer, active layer, doped layer and source-drain electrode, comprising:
Gate insulating layer, active film layer, doping film layer and second metal layer are sequentially depositing on the grid；
It is coated with a layer photoresist in the second metal layer, and patterned process is carried out to the photoresist；
First time wet-etching technology is used to perform etching to form the second sub- metal layer the second metal layer；
First time dry etch process is used to perform etching to form active layer and doping the active film layer and doping film layer
Layer is simultaneously ashed the photoresist；
Second of wet-etching technology is used to perform etching to form source-drain electrode the described second sub- metal layer；
Second of dry etch process is used to perform etching the active layer and doped layer to form channel region, the channel region
Through the doped layer and partially it is through to the active layer.
3. the production method of active switch according to claim 1, which is characterized in that in the mixing of the nitrogen and ammonia
It is heated -40 seconds 0 second in atmosphere.
4. the production method of active switch according to claim 1, which is characterized in that it is described under predetermined power to described
Channel region carries out the pretreated step of gas, further includes:
The channel region is placed in hydrogen or nitrogen or ammonia or nitrous oxide atmosphere under the predetermined power and is added
Heat treatment.
5. the production method of active switch according to claim 4, which is characterized in that heat 0 in the hydrogen atmosphere
It -30 seconds seconds, heats -20 seconds 0 second, is heated -20 seconds 0 second in the ammonia atmosphere, in an oxygen in the nitrogen atmosphere
Change in two nitrogen atmosphere and heats -20 seconds 0 second.
6. the production method of active switch according to claim 1, which is characterized in that the gas pretreatment device is to change
Learn gaseous phase deposition stove.
7. the production method of active switch according to claim 1, which is characterized in that the predetermined power range is 6KW-
10KW。
8. a kind of active switch, which is characterized in that use the production method such as the described in any item active switches of claim 1-7
It is manufactured, the active switch includes:
Substrate；
Grid is formed on the substrate；
Gate insulating layer is formed on the substrate, wherein the gate insulating layer covers the grid；
Active layer is formed on the gate insulating layer；
Doped layer is formed on the active layer；And
The source electrode being formed on the doped layer and drain electrode；
Wherein, a channel region is located at the middle part of the doped layer, and the channel region is through the doped layer and is partially through to institute
Active layer is stated, the source electrode and drain electrode are located at the two sides of the channel region.
9. active switch according to claim 8, which is characterized in that the thickness range of the grid is 3000 angstrom -5000
Angstrom.
10. a kind of display device, which is characterized in that including such as described in any item active switches of claim 8-9.
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