CN109599648B - Multifunctional filter with adjustable center frequency and bandwidth based on microstrip line resonator - Google Patents
Multifunctional filter with adjustable center frequency and bandwidth based on microstrip line resonator Download PDFInfo
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- CN109599648B CN109599648B CN201811275954.8A CN201811275954A CN109599648B CN 109599648 B CN109599648 B CN 109599648B CN 201811275954 A CN201811275954 A CN 201811275954A CN 109599648 B CN109599648 B CN 109599648B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/08—Strip line resonators
- H01P7/088—Tunable resonators
Abstract
The invention discloses a multifunctional filter with adjustable center frequency and bandwidth based on a microstrip line resonator, which comprises a first impedance resonator, a second impedance resonator, a third impedance resonator, a variable capacitance diode D1, a variable capacitance diode D2, a variable capacitance diode D3, a variable capacitance diode D4, a variable capacitance diode D5, a variable capacitance diode D6, a variable capacitance diode D7, a variable capacitance diode D8, a variable capacitance diode D9, a variable capacitance diode D10, a variable capacitance diode D11, a variable capacitance diode D12, a variable capacitance diode D13, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R5, a resistor R6, a resistor R7, a resistor R8, a resistor R9, a resistor R10, a resistor R11, a capacitor C1, a capacitor C2 and a capacitor C3. The distance between the first low impedance strip and the first low impedance strip of the second impedance resonator is 2mm, and the distance between the first low impedance strip of the second impedance resonator and the first low impedance strip of the third impedance resonator is 1.2 mm.
Description
Technical Field
The invention relates to the field of wireless communication systems, in particular to a multifunctional filter with adjustable center frequency and bandwidth based on a microstrip line resonator.
Background
With the rapid development of modern wireless communication systems, frequency spectrum resources are increasingly tense, and more environments require electronic equipment to have the characteristics of tunability and multiple functions, so that the utilization rate of the frequency spectrum resources is improved. The balun filter is an independent microwave passive device, and is based on the principle that a balance circuit in a signal system is resistant to interference, and meanwhile, the balun filter has the advantages of low cost, high integration degree, miniaturization and the like, so that the balun filter becomes one of the keys for developing an anti-electromagnetic interference radar communication system. In addition, the power divider is also an important device of the rf front end, and is often applied to a circuit of the rf front end together with a filter, and the functions of filtering and power division are realized in a cascade manner, which makes the system bulky and also makes the insertion loss of the system large. The power divider and the filter realize the functions of filtering and power distribution in an integrated mode, so that the overall size of the system can be reduced, and the overall loss of the system can be improved. At present, the adjustable range of the existing balun filter is low, and the balun filter with controllable center frequency and relative bandwidth is not involved in the market. In addition, no research literature on interconversion between the balun filter and the power divider filter without an additional circuit is available on the market.
For example, chinese patent with the application number of "201410210133.1" entitled "multi-layer dual-mode dual-passband balun filter with independently controllable bandwidth and operating frequency", the microwave dielectric substrate comprises a first microwave dielectric substrate and a second microwave dielectric substrate, wherein a first metal layer serving as a common ground is arranged on one surface of the first microwave dielectric substrate facing the second microwave dielectric substrate, two orthogonal first gaps with unequal lengths are arranged on the first metal layer, a first patch resonator is arranged on one surface of the first microwave dielectric substrate far away from the second microwave dielectric substrate, the first patch resonator is provided with two orthogonal second gaps with unequal lengths, the first patch resonator is provided with an input end, a second patch resonator is arranged on one surface of the second microwave dielectric substrate far away from the first microwave dielectric substrate, two orthogonal third gaps with unequal lengths are arranged on the second patch resonator, and two output ends of the second patch resonator are arranged at two ends orthogonal to the input end. This patent can control the bandwidth that corresponds the passband respectively through controlling the length in two first gaps respectively, through controlling the length in two second gaps and third gap, can control the central frequency that corresponds the passband respectively, utilizes neotype topological structure to realize two independent control passband bandwidths and central frequency. However, the patent also has the following disadvantages: firstly, the loading of the varactor is more, and the insertion loss and the application difficulty of the circuit are increased. Second, the center frequency adjustment range is about 26%, and there is still room for further improvement.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide a multifunctional filter with adjustable center frequency and bandwidth based on a microstrip line resonator, and the technical scheme adopted by the present invention is as follows:
the center frequency and the bandwidth of the multifunctional filter based on the microstrip line resonator are adjustable:
the impedance matching circuit comprises a first impedance resonator, a second impedance resonator and a third impedance resonator which are all attached to a dielectric substrate and are in a gamma-shaped structure, wherein the anodes of the varactors D1, the varactors D7 and the varactors D10 are all connected with the first impedance resonator by microstrip lines, the varactors D12, the varactors D11, the varactors D8 and the varactors D3 are all connected with the second impedance resonator by microstrip lines, the varactors D5, the varactors D9 and the varactors D13 are all connected with the third impedance resonator by microstrip lines, a capacitor C1 is connected with the cathode of the varactor D7 at one end, a second Port2 is connected with the other end of the capacitor C1, the cathode of the varactor D1 is connected with the cathode of the varactor D2, the anode of the varactor D8 is grounded, a capacitor C2 is connected with the cathode of the varactor D8 at one end, and a first Port1 is connected with the other end of the capacitor C2, varactor D4 with its cathode connected to the cathode of varactor D3 and its anode grounded, capacitor C3 with one end connected to the cathode of varactor D9, third Port3 connected to the other end of capacitor C3, varactor D6 with its cathode connected to the cathode of varactor D5 and its anode grounded, and SMA joints connected to the first Port1, second Port2 and third Port3 in one-to-one correspondence. The first impedance resonator and the second impedance resonator are arranged in opposite positions, and the second impedance resonator and the third impedance resonator are arranged in opposite positions. The dielectric substrate is 25mil in thickness, and the relative dielectric constant is 10.2.
The first impedance resonator, the second impedance resonator and the third impedance resonator have the same structure and respectively comprise a first low impedance band and a second low impedance band which are integrally formed, the side edge of the first low impedance band is shared with the side edge of the second low impedance band, and the first low impedance band and the second low impedance band jointly form a gamma-shaped structure.
Length l of the first low impedance strip1Is 8mm and has a width w1Is 4mm and the length l of the second low impedance strip2Is 20mm and has a width w2Is 1.18 mm.
A spacing s between the first low impedance band of the first impedance resonator and the first low impedance band of the second impedance resonator1Is 2mm, the distance between the first low impedance band of the second impedance resonator and the first low impedance band of the third impedance resonators2Is 1.2 mm.
And cathodes of the varactor diode D10, the varactor diode D11, the varactor diode D13, the varactor diode D1, the varactor diode D7, the varactor diode D3, the varactor diode D8, the varactor diode D5 and the varactor diode D9 are connected with a reverse bias power supply.
Further, the multifunctional filter further includes a resistor R9 having one end connected to the first low impedance band of the first impedance resonator and the other end grounded, a resistor R10 having one end connected to the first low impedance band of the second impedance resonator and the other end grounded, and a resistor R11 having one end connected to the first low impedance band of the third impedance resonator and the other end grounded.
Furthermore, the multifunctional filter further comprises a resistor R7 having one end connected to the cathodes of the varactor diode D10 and the varactor diode D11, respectively, and the other end connected to a reverse bias power supply, a resistor R8 having one end connected to the cathodes of the varactor diode D12 and the varactor diode D13, respectively, and the other end connected to the reverse bias power supply, a resistor R2 connected between the cathode of the varactor diode D1 and the reverse bias power supply, a resistor R1 connected between the cathode of the varactor diode D7 and the reverse bias power supply, a resistor R3 connected between the cathode of the varactor diode D8 and the reverse bias power supply, a resistor R4 connected between the cathode of the varactor diode D3 and the reverse bias power supply, and a resistor R6 connected between the cathode of the varactor diode D9 and the reverse bias power supply, and a resistor R5 connected between the cathode of the varactor D5 and a reverse bias power supply.
Preferably, the varactor diode D1 is connected at the center of the bottom of the first low impedance band of the first impedance resonator and the varactor diode D7 is connected at a distance D from the bottom of the first low impedance band of the first impedance resonator1Is 0.68 mm. The varactor diode D5 is connected at the center of the bottom of the first low impedance band of the third impedance resonator and the varactor diode D9 is connected at a distance D from the bottom of the first low impedance band of the third impedance resonator1Is 0.68 mm. The varactor diode D3 is connected at the bottom center of the first low impedance band of the second impedance resonator and the varactor diode D8 is connected atDistance d from the bottom of the first low impedance band of the second impedance resonator2Is 1.38 mm.
Preferably, the resistor R9 is connected at the bottom edge of the first low impedance band of the first impedance resonator and is opposite to the common edge of the first low impedance band and the second low impedance band of the first impedance resonator; the resistor R10 is connected to the bottom edge of the first low impedance band of the second impedance resonator and is opposite to the common edge of the first low impedance band and the second low impedance band of the second impedance resonator; the resistor R11 is connected at the bottom edge of the first low impedance band of the third impedance resonator opposite the common edge of the first and second low impedance bands of the third impedance resonator.
Compared with the prior art, the invention has the following beneficial effects:
(1) the first impedance resonator and the third impedance resonator in the invention share the second impedance resonator, and respectively transmit signals in a mode of electric field coupling and magnetic field coupling, so that the phases of two paths of output signals respectively lead and lag 90 degrees, and a balun signal is formed and output.
(2) According to the invention, magnetic field coupling is converted into electric field coupling through the capacitance between the second impedance resonator and the third impedance resonator, so that phase consistency is realized, and the balun is converted into a power divider.
(3) According to the invention, the electric field coupling and the magnetic field coupling are mutually counteracted through the capacitance value between the second impedance resonator and the third impedance resonator, so that the dual-port filter is realized.
(4) According to the invention, through adjusting the capacitance value between the input/output port and the impedance resonator, adjusting the capacitance value between the resonators and adjusting the grounding capacitance value of the quarter-wavelength resonator connected in series at the high-impedance microstrip end, the external quality factor, the electromagnetic coupling coefficient and the electrical length of the resonators are controlled, so that the adjustment of the center frequency and the bandwidth and the mutual conversion among the balun filter, the power division filter and the dual-port filter are realized.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope of protection, and it is obvious for those skilled in the art that other related drawings can be obtained according to these drawings without inventive efforts.
FIG. 1 is a schematic diagram of the present invention as a structural dimension.
FIG. 2 is a pictorial representation of the present invention.
Fig. 3 is a simulation diagram of the S11 parameter as a balun filter according to the present invention.
Fig. 4 is a simulation diagram of the S21 parameter as a balun filter according to the present invention.
Fig. 5 is a simulation diagram of the S31 parameter as a balun filter according to the present invention.
FIG. 6 is a simulation diagram of parameters of a bandwidth adjustment test S11 with a center frequency of 1.1GHz as a balun filter according to the invention.
FIG. 7 is a simulation diagram of parameters of a bandwidth adjustment test S21 with a center frequency of 1.1GHz as a balun filter according to the invention.
FIG. 8 is a simulation diagram of parameters of a bandwidth adjustment test S31 with a center frequency of 1.1GHz as a balun filter according to the invention.
FIG. 9 is a simulation diagram of parameters of a bandwidth adjustment test S11 with a center frequency of 1.22GHz as a balun filter according to the invention.
FIG. 10 is a simulation diagram of parameters of a bandwidth adjustment test S21 with a center frequency of 1.22GHz as a balun filter according to the invention.
FIG. 11 is a simulation diagram of parameters of a bandwidth adjustment test S31 with a center frequency of 1.22GHz as a balun filter according to the invention.
Fig. 12 is a diagram (one) of the test of the degree of imbalance between the amplitude and the phase of the signal output port used as the balun filter according to the present invention.
Fig. 13 is a diagram (ii) of the test of the degree of imbalance between the amplitude and the phase of the signal output port used as the balun filter according to the present invention.
Fig. 14 is a simulation diagram of the S11 parameter as the power division filter of the present invention.
Fig. 15 is a simulation diagram of the S21 parameter as the power division filter of the present invention.
Fig. 16 is a simulation diagram of the S31 parameter as the power division filter of the present invention.
Fig. 17 is a simulation diagram of parameters of a bandwidth adjustment test S11 with a center frequency of 1.1GHz as a power division filter according to the present invention.
Fig. 18 is a simulation diagram of parameters of a bandwidth adjustment test S31 with a center frequency of 1.1GHz as a power division filter according to the present invention.
Fig. 19 is a simulation diagram of parameters of a bandwidth adjustment test S11 with a center frequency of 1.2GHz as a power division filter according to the present invention.
Fig. 20 is a simulation diagram of parameters of a bandwidth adjustment test S31 with a center frequency of 1.2GHz as a power division filter according to the present invention.
Fig. 21 is a diagram (one) illustrating the measurement of the amplitude and phase imbalance of the signal output port as a power division filter according to the present invention.
Fig. 22 is a diagram (two) of the test of the degree of imbalance between the amplitude and the phase of the signal output port as the power dividing filter according to the present invention.
Fig. 23 is a diagram showing simulation of S11 parameter as a two-port reconfigurable filter according to the present invention.
Fig. 24 is a simulation diagram of the S21 parameter as a two-port reconfigurable filter according to the present invention.
Fig. 25 is a diagram showing simulation of S31 parameter as a two-port reconfigurable filter according to the present invention.
Fig. 26 is a simulation diagram of parameters of a bandwidth adjustment test S11 with a center frequency of 1.06GHz as a dual-port reconfigurable filter according to the invention.
Fig. 27 is a simulation diagram of parameters of a bandwidth adjustment test S21 with a center frequency of 1.06GHz as a dual-port reconfigurable filter according to the invention.
Fig. 28 is a simulation diagram of parameters of a bandwidth adjustment test S31 with a center frequency of 1.06GHz as a dual-port reconfigurable filter according to the invention.
Fig. 29 is a simulation diagram of parameters of a bandwidth adjustment test S11 with a center frequency of 1.16GHz as a dual-port reconfigurable filter according to the invention.
Fig. 30 is a simulation diagram of parameters of a bandwidth adjustment test S21 with a center frequency of 1.16GHz as a dual-port reconfigurable filter according to the invention.
Fig. 31 is a simulation diagram of parameters of a bandwidth adjustment test S31 with a center frequency of 1.16GHz as a dual-port reconfigurable filter according to the invention.
In the drawings, the names of the parts corresponding to the reference numerals are as follows:
1-a first low impedance band, 2-a second low impedance band.
Detailed Description
To further clarify the objects, technical solutions and advantages of the present application, the present invention will be further described with reference to the accompanying drawings and examples, and embodiments of the present invention include, but are not limited to, the following examples. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Examples
As shown in fig. 1 to 2, the present embodiment provides a multifunctional filter with adjustable center frequency and bandwidth based on a microstrip line resonator, which includes a balun filter, a power division filter, and a two-port reconfigurable filter. The dielectric substrate in this embodiment has a thickness of 25mil, and a relative dielectric constant of 10.2, and the varactor diode is an SMV123 series. In the present embodiment, the terms "first", "second", and the like are used only for distinguishing the similar components, and are not to be construed as limiting the scope of protection. In addition, the terms of orientation such as "bottom", "top", "edge" and the like in the present embodiment are explained based on the drawings.
Specifically, the multifunctional filter comprises a first impedance resonator, a second impedance resonator and a third impedance resonator which are all attached to a dielectric substrate and have a reverse L-shaped structure, a varactor diode D1, a varactor diode D7 and a varactor diode D10 of which the anodes are all connected with the first impedance resonator by microstrip lines, a varactor diode D12, a varactor diode D11, a varactor diode D8 and a varactor diode D3 of which the anodes are all connected with the second impedance resonator by microstrip lines, a varactor diode D5, a varactor diode D9 and a varactor diode D13 of which the anodes are all connected with the third impedance resonator by microstrip lines, a capacitor C1 of which one end is connected with the cathode of the varactor diode D7, a second Port2 connected with the other end of the capacitor C1, a varactor diode D2 of which the cathode is connected with the cathode of the varactor diode D1 and of which the anode is grounded, and a capacitor C2 of which one end is connected with the cathode of the varactor diode D8, a first Port1 connected to the other end of the capacitor C2, a varactor D4 having a cathode connected to the cathode of the varactor D3 and an anode grounded, a capacitor C3 having one end connected to the cathode of the varactor D9, a third Port3 connected to the other end of the capacitor C3, a varactor D6 having a cathode connected to the cathode of the varactor D5 and an anode grounded, SMA connectors connected to the first Port1, the second Port2 and the third Port3 in one-to-one correspondence, a resistor R9 having one end connected to the first low impedance band of the first impedance resonator and the other end grounded, a resistor R10 having one end connected to the first low impedance band of the second impedance resonator and the other end grounded, a resistor R11 having one end connected to the first low impedance band of the third impedance resonator and the other end grounded, and a resistor R7 having one end connected to the cathode of the varactor D10 and the varactor D11 and the other end connected to a reverse bias power supply, a resistor R8 having one end connected to the cathodes of the varactor diode D12 and the varactor diode D13, respectively, and the other end connected to a reverse bias power supply, a resistor R2 connected between the cathode of the varactor diode D1 and the reverse bias power supply, a resistor R1 connected between the cathode of the varactor diode D7 and the reverse bias power supply, a resistor R3 connected between the cathode of the varactor diode D8 and the reverse bias power supply, a resistor R4 connected between the cathode of the varactor diode D3 and the reverse bias power supply, a resistor R6 connected between the cathode of the varactor diode D9 and the reverse bias power supply, and a resistor R5 connected between the cathode of the varactor diode D5 and the reverse bias power supply. And cathodes of the varactor diode D10, the varactor diode D11, the varactor diode D13, the varactor diode D1, the varactor diode D7, the varactor diode D3, the varactor diode D8, the varactor diode D5 and the varactor diode D9 are connected with a reverse bias power supply. In addition, the resistances of the resistor R1 to the resistor R11 are all 100k Ω, and the resistances of the capacitor C1 to the capacitor C3 are all 8 pF.
In this embodiment, the first impedance resonator and the second impedance resonator are disposed at opposite positions, and the second impedance resonator and the third impedance resonator are disposed at opposite positions. The structures of the first impedance resonator, the second impedance resonator and the third impedance resonator are the same, the first impedance resonator, the second impedance resonator and the third impedance resonator respectively comprise a first low impedance band 1 and a second low impedance band 2 which are integrally formed, the side edge of the first low impedance band is shared with the side edge of the second low impedance band, and the first low impedance band and the second low impedance band jointly form a gamma-shaped structure. Wherein the resistor R9 is connected at the bottom edge of the first low impedance band of the first impedance resonator and is opposite to the common side of the first low impedance band and the second low impedance band of the first impedance resonator. And the resistor R10 is connected at the bottom edge of the first low impedance band of the second impedance resonator and is opposite to the common edge of the first low impedance band and the second low impedance band of the second impedance resonator; meanwhile, the resistor R11 is connected to the bottom edge of the first low impedance band of the third impedance resonator and is opposed to the common side of the first low impedance band and the second low impedance band of the third impedance resonator.
In this embodiment, the length l of the first low impedance band1Is 8mm and has a width w1Is 4mm and the length l of the second low impedance strip2Is 20mm and has a width w2Is 1.18 mm. A spacing s between the first low impedance band of the first impedance resonator and the first low impedance band of the second impedance resonator12mm, the distance s between the first low impedance strip of the second impedance resonator and the first low impedance strip of the third impedance resonator2Is 1.2 mm. Varactor D1 is connected at the bottom center of the first low impedance band of the first impedance resonator, and varactor D7 is connected at a distance D from the bottom of the first low impedance band of the first impedance resonator1Is 0.68 mm. The varactor diode D5 is connected at the center of the bottom of the first low impedance band of the third impedance resonator and the varactor diode D9 is connected at a distance D from the bottom of the first low impedance band of the third impedance resonator1Is 0.68 mm. The varactor D3 is connected at the bottom center of the first low impedance band of the second impedance resonator, and the varactor D8 is connected at the first low impedance from the second impedance resonatorDistance d with bottom2Is 1.38 mm. The applicant verified through repeated experiments that when the distance s between the first low-impedance band of the second impedance resonator and the first low-impedance band of the third impedance resonator is larger than the first low-impedance band of the third impedance resonator2When the filter diameter is 1.2mm, the function switching of the three filters can be realized.
In order to verify the parameter characteristics of the multifunctional filters, a center frequency adjustment simulation test, an S11 parameter test, an S21 parameter test and a signal output port amplitude and phase imbalance test are carried out. As shown in fig. 3 to 13, this embodiment is used as a balun filter, modeled and simulated in the electromagnetic simulation software hfss.15, and the full-scale machining test is performed. As can be seen from FIGS. 3 to 11, the adjustment range of the center frequency of the balun filter covers 1.0-1.32GHz, the adjustment range of the 1-dB bandwidth is about 30-60MHz, and the return loss in the pass band is better than-10 dB. As can be seen from fig. 11 to 12, the 1dB bandwidth amplitude difference between the two balanced output ports in the passband of the balun filter is within 0.4 dB. Meanwhile, the phase difference of 1dB bandwidths of two balanced output ports in the passband of the balun filter is within 1.3 degrees, which shows that the 180-degree phase reversal performance of the two balanced ports is good.
In addition, the implementation can also be used as a power division filter, the performance parameter test curves of the implementation are shown in fig. 14 to fig. 22, and as can be seen from fig. 14 to fig. 20, the center frequency adjustment range of the power division filter covers 0.96-1.27GHz, the 1-dB bandwidth adjustment range is about 30-110MHz, and the return loss in the pass band is better than-10 dB. And as can be seen from fig. 21 to 22, the 1dB bandwidth amplitude difference between the two output ports in the pass band of the power division filter is within 0.5 dB. Meanwhile, the 1dB bandwidth phase difference of the two output ports in the passband of the power division filter is within 1.5 degrees, and the power division filter has good equal power division performance.
Moreover, the embodiment can also be used as a dual-port reconfigurable filter, the performance parameter test curve of the dual-port reconfigurable filter is shown in fig. 23 to fig. 31, and as can be seen from fig. 23 to fig. 25, the adjustable range of the center frequency of the dual-port reconfigurable filter is 1-1.28GHz, the return loss in the pass band is better than-10 dB, the power suppression degree of one port is better than-30 dB, and the good performance of the dual-port reconfigurable filter is reflected. And as can be seen from fig. 26 to fig. 31, the 1-dB bandwidth adjustment range of the two-port reconfigurable filter is about 70-130MHz, which shows good bandwidth control performance.
The above-mentioned embodiments are only preferred embodiments of the present invention, and do not limit the scope of the present invention, but all the modifications made by the principles of the present invention and the non-inventive efforts based on the above-mentioned embodiments shall fall within the scope of the present invention.
Claims (2)
1. The center frequency and bandwidth adjustable multifunctional filter based on the microstrip line resonator is characterized in that:
the impedance matching circuit comprises a first impedance resonator, a second impedance resonator and a third impedance resonator which are all attached to a dielectric substrate and are in a gamma-shaped structure, wherein the anodes of the varactors D1, the varactors D7 and the varactors D10 are all connected with the first impedance resonator by microstrip lines, the varactors D12, the varactors D11, the varactors D8 and the varactors D3 are all connected with the second impedance resonator by microstrip lines, the varactors D5, the varactors D9 and the varactors D13 are all connected with the third impedance resonator by microstrip lines, a capacitor C1 is connected with the cathode of the varactor D7 at one end, a second Port2 is connected with the other end of the capacitor C1, the cathode of the varactor D1 is connected with the cathode of the varactor D2, the anode of the varactor D8 is grounded, a capacitor C2 is connected with the cathode of the varactor D8 at one end, and a first Port1 is connected with the other end of the capacitor C2, a varactor diode D4 having a cathode connected to the cathode of the varactor diode D3 and an anode grounded, a capacitor C3 having one end connected to the cathode of the varactor diode D9, a third Port3 connected to the other end of the capacitor C3, a varactor diode D6 having a cathode connected to the cathode of the varactor diode D5 and an anode grounded, SMA joints connected to the first Port1, the second Port2 and the third Port3 in one-to-one correspondence, a resistor R9 having one end connected to the first low impedance band of the first impedance resonator and the other end grounded, a resistor R10 having one end connected to the first low impedance band of the second impedance resonator and the other end grounded, a resistor R11 having one end connected to the first low impedance band of the third impedance resonator and the other end grounded, a resistor R7 having one end connected to the cathodes of the varactor diode D10 and the varactor diode D11 and the other end connected to a reverse bias power supply, and a resistor R7 having one end connected to the varactor diode D12 and the cathode of the varactor diode D13, A resistor R8 having the other end connected to a reverse bias power supply, a resistor R2 connected between the cathode of the varactor D1 and the reverse bias power supply, a resistor R1 connected between the cathode of the varactor D7 and the reverse bias power supply, a resistor R3 connected between the cathode of the varactor D8 and the reverse bias power supply, a resistor R4 connected between the cathode of the varactor D3 and the reverse bias power supply, a resistor R6 connected between the cathode of the varactor D9 and the reverse bias power supply, and a resistor R5 connected between the cathode of the varactor D5 and the reverse bias power supply;
the first impedance resonator and the second impedance resonator are arranged in opposite positions, and the second impedance resonator and the third impedance resonator are arranged in opposite positions; the thickness of the dielectric substrate is 25mil, and the relative dielectric constant is 10.2;
the structures of the first impedance resonator, the second impedance resonator and the third impedance resonator are the same, the first impedance resonator, the second impedance resonator and the third impedance resonator respectively comprise a first low impedance band (1) and a second low impedance band (2) which are integrally formed, the side edge of the first low impedance band (1) is shared by the side edge of the second low impedance band (2), and the first low impedance band (1) and the second low impedance band (2) jointly form a gamma-shaped structure;
the length l of the first low impedance strip (1)1Is 8mm and has a width w1Is 4 mm; the length l of the second low impedance strip (2)2Is 20mm and has a width w2Is 1.18 mm;
a spacing s between the first low impedance band of the first impedance resonator and the first low impedance band of the second impedance resonator12mm, the distance s between the first low impedance strip of the second impedance resonator and the first low impedance strip of the third impedance resonator2Is 1.2 mm;
cathodes of the varactor diode D10, the varactor diode D11, the varactor diode D13, the varactor diode D1, the varactor diode D7, the varactor diode D3, the varactor diode D8, the varactor diode D5 and the varactor diode D9 are connected with a reverse bias power supply;
the varactor diode D1 is connected at the bottom center of the first low impedance band of the first impedance resonator and the varactor diode D7 is connected at a distance D from the bottom of the first low impedance band of the first impedance resonator1At 0.68 mm; the varactor diode D5 is connected at the center of the bottom of the first low impedance band of the third impedance resonator and the varactor diode D9 is connected at a distance D from the bottom of the first low impedance band of the third impedance resonator1At 0.68 mm; the varactor diode D3 is connected at the bottom center of the first low impedance band of the second impedance resonator and the varactor diode D8 is connected at a distance D from the bottom of the first low impedance band of the second impedance resonator21.38 mm;
an anode of the varactor diode D10 is connected to a top end of the first low impedance band of the first impedance resonator, anodes of the varactor diode D11 and the varactor diode D12 are connected to a top end of the first low impedance band of the second impedance resonator, and an anode of the varactor diode D13 is connected to a top end of the first low impedance band of the third impedance resonator.
2. The microstrip-line resonator-based multifunctional filter with adjustable center frequency and bandwidth according to claim 1, wherein the resistor R9 is connected at the bottom edge of the first low impedance band of the first impedance resonator and opposite to the common edge of the first low impedance band and the second low impedance band of the first impedance resonator;
the resistor R10 is connected to the bottom edge of the first low impedance band of the second impedance resonator and is opposite to the common edge of the first low impedance band and the second low impedance band of the second impedance resonator; the resistor R11 is connected at the bottom edge of the first low impedance band of the third impedance resonator opposite the common edge of the first and second low impedance bands of the third impedance resonator.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811275954.8A CN109599648B (en) | 2018-10-30 | 2018-10-30 | Multifunctional filter with adjustable center frequency and bandwidth based on microstrip line resonator |
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| CN109599650B (en) * | 2018-11-06 | 2019-12-10 | 杨涛 | Reconfigurable balun filter based on microstrip line resonator |
| CN110289830B (en) * | 2019-07-30 | 2023-05-09 | 成都频岢微电子有限公司 | Branch filter network |
| CN110365304B (en) * | 2019-07-30 | 2023-05-09 | 成都频岢微电子有限公司 | Branch filter |
| CN110492865B (en) * | 2019-08-05 | 2023-05-19 | 电子科技大学 | Mixed filter network |
| CN110518892B (en) * | 2019-08-05 | 2023-05-19 | 电子科技大学 | Orthogonal filter device |
| CN112187205A (en) * | 2020-08-20 | 2021-01-05 | 电子科技大学 | Power division filter network with random phase difference output |
| CN113422182B (en) * | 2021-07-02 | 2022-04-01 | 杭州电子科技大学 | Adjustable low-pass filter based on impedance tuning |
| CN114464973B (en) * | 2022-01-19 | 2023-03-10 | 电子科技大学 | Reconfigurable filter attenuator based on continuously adjustable center frequency |
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| CN107579327B (en) * | 2017-07-31 | 2020-02-07 | 西安电子科技大学 | Reconfigurable power divider with dual-adjustable frequency and power division ratio |
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