CN109066039B - Novel microstrip power division duplexer - Google Patents
Novel microstrip power division duplexer Download PDFInfo
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- CN109066039B CN109066039B CN201810660800.4A CN201810660800A CN109066039B CN 109066039 B CN109066039 B CN 109066039B CN 201810660800 A CN201810660800 A CN 201810660800A CN 109066039 B CN109066039 B CN 109066039B
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- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
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Abstract
The invention discloses a novel microstrip power division duplexer which comprises a polygonal dielectric substrate, wherein a metal ground plate is arranged on the lower surface of the polygonal dielectric substrate, and an input port feeder line, first to fourth output port feeder lines and first to fourth output coupling lines are arranged on the upper surface of the polygonal dielectric substrate. The first output port feeder line, the second output port feeder line and the input port feeder line are respectively provided with the same first E-type dual-mode resonator and the same second E-type dual-mode resonator, and the third output port feeder line, the same fourth E-type dual-mode resonator and the same fourth E-type dual-mode resonator are respectively arranged between the third output port feeder line, the same fourth output port feeder line and the same input port feeder line. And a first isolation resistor is arranged between the first E-type dual-mode resonator and the second E-type dual-mode resonator, and a second isolation resistor is arranged between the third E-type dual-mode resonator and the fourth E-type dual-mode resonator. And the tail ends of the first output coupling line, the second output coupling line and the fourth output coupling line are respectively provided with a through hole. The microstrip power division duplexer has the advantages of compact structure, low loss, high selectivity, good isolation and good out-of-band rejection performance.
Description
Technical Field
The invention relates to the technical field of microwave passive devices, in particular to a novel micro-strip power division duplexer which has multiple characteristics of compact structure, low loss, high selectivity, good isolation, good out-of-band rejection and the like. The novel microstrip power division duplexer has a brand new topological structure, channel separation and power distribution functions are realized without an additional feed network, each channel can be independently designed and controlled, and great design flexibility is shown.
Background
In recent years, with the development of Modular Building Blocks (MBBs) and Monolithic Microwave Integrated Circuits (MMICs), low cost, high integration, and miniaturization have become very important considerations in the Integrated design of modern wireless communication systems. Generally, the rf front-end circuit is composed of different devices, such as filters, power dividers, etc., and designing these devices separately increases the physical size of the front-end circuit, so that designing devices having both power dividing and filtering characteristics becomes the most effective way to reduce the circuit size. The power division duplexer is a passive element with integrated functions, and has received extensive attention from academic researchers.
Document 1[ m.s.sorkhelizi, a.vosoogh, a.a.kishk and p.s.kiddal, "Design integrated multiplexer-power divider," 2016IEEE MTT-S International Microwave Symposium (IMS), San Francisco, CA,2016, pp.1-3 ] designs a high-order channel integrated power division duplexer to feed an antenna array by using a gap waveguide technology, but does not implement the Design of the power division duplexer using a PCB technology, and its circuit size is large.
Document 2[ x.wang, j.wang, g.zhang, j.s.hong and w.wu, "Dual-wireless filtering power divider with good isolation and high selection," ieee micro w.wireless company.let, vol.27, No.12, pp.1071-1073, dec.2017 ] proposes a power division filter with wide stopband performance, however, the problem of large insertion loss and poor selectivity limits the wide application of the power division filter.
Document 3[ c.g.sun and j.l.li, "Design of planar multi-way differential power division network using double-side parallel strip," electron.lett.,2017,53,20, pp.1364-1366 ] designs a highly selective power division duplexer by using E-shaped resonators, but the isolation level in the band is not good enough.
Based on the background, the integration of power distribution and duplexer functions is realized by combining the resonance mechanism of an E-type dual-mode resonator and utilizing the field distribution principle of a half-wavelength coupling line, and meanwhile, the position of an isolation resistor is ingeniously designed, so that the novel microstrip power division duplexer which is compact in structure, low in loss, high in selectivity, good in isolation degree and good in out-of-band rejection characteristic is realized.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the invention aims to provide a microstrip power division duplexer with a brand-new topological structure, which has the characteristics of compact structure, low loss, high selectivity, good isolation and good out-of-band rejection.
The invention adopts the following technical scheme for solving the technical problems: the invention provides a novel microstrip power division duplexer, which comprises a polygonal dielectric substrate, wherein a metal ground plate is arranged on the lower surface of the polygonal dielectric substrate, and an input port feeder line, a first output port feeder line, a second output port feeder line, a third output port feeder line and a fourth output port feeder line are arranged on the upper surface of the polygonal dielectric substrate;
the first output port feeder line comprises a first 50 ohm microstrip line conduction band and a first coupling output line, one end of the first 50 ohm microstrip line conduction band is located on the long sides of two adjacent vertical edges of the polygonal dielectric substrate, the other end of the first 50 ohm microstrip line conduction band is connected with the end face of the short side of the first coupling output line which is bent in an L shape, and the L-shaped long side of the first coupling output line is parallel to the long side of the polygonal dielectric substrate and points to the short side of the polygonal dielectric substrate;
the second output port feeder line comprises a second 50 ohm microstrip line conduction band and a second coupling output line, one end of the second 50 ohm microstrip line conduction band is positioned on the long sides of two adjacent vertical edges of the polygonal dielectric substrate, the other end of the second 50 ohm microstrip line conduction band is connected with the end face of the short side of the second coupling output line which is bent in an L shape, and the L-shaped long side of the second coupling output line is parallel to the long side of the polygonal dielectric substrate and points to the short side of the polygonal dielectric substrate;
the third output port feeder line comprises a third 50 ohm microstrip line conduction band and a third coupling output line, one end of the third 50 ohm microstrip line conduction band is positioned on the long sides of two adjacent vertical edges of the polygonal dielectric substrate, the other end of the third 50 ohm microstrip line conduction band is connected with the end face of the short side of the third coupling output line which is bent in an L shape, and the L-shaped long side of the third coupling output line is parallel to the long side of the polygonal dielectric substrate and points to the short side of the polygonal dielectric substrate;
the fourth output port feeder line comprises a fourth 50 ohm microstrip line conduction band and a fourth coupling output line, one end of the fourth 50 ohm microstrip line conduction band is positioned on the long sides of two adjacent vertical edges of the polygonal dielectric substrate, the other end of the fourth 50 ohm microstrip line conduction band is connected with the end face of the short side of the fourth coupling output line which is bent in an L shape, and the L-shaped long side of the fourth coupling output line is parallel to the long side of the polygonal dielectric substrate and points to the short side of the polygonal dielectric substrate;
the first E-type dual-mode resonator and the second E-type dual-mode resonator which are the same are respectively arranged between the first output port feeder line and the input port feeder line and between the second output port feeder line and the input port feeder line, and the third E-type dual-mode resonator and the fourth E-type dual-mode resonator which are the same are respectively arranged between the third output port feeder line and the fourth output port feeder line and between the input port feeder line and the input port feeder line; a first isolation resistor is arranged between the first E-type dual-mode resonator and the second E-type dual-mode resonator, and a second isolation resistor is arranged between the third E-type dual-mode resonator and the fourth E-type dual-mode resonator;
the end parts, back to the short sides, of the long L-shaped edges of the first output coupling line, the second output coupling line, the third output coupling line and the fourth output coupling line are respectively provided with a through hole;
the second E-type dual-mode resonator and the first E-type dual-mode resonator are symmetrical with respect to the center of the dielectric substrate, and the fourth E-type dual-mode resonator and the third E-type dual-mode resonator are symmetrical with respect to the center of the dielectric substrate.
The novel microstrip power division duplexer further comprises: the input port feeder line comprises a 50 ohm microstrip line conduction band and a half wavelength input coupling line, the input end of the 50 ohm microstrip line conduction line is positioned on one short side of the rectangular dielectric substrate, the output end of the 50 ohm microstrip line conduction band conduction line is connected with one end of the half wavelength input coupling line, and the free end of the half wavelength input coupling line points to the other short side of the rectangular dielectric substrate.
The novel microstrip power division duplexer further comprises: the first E-type dual-mode resonators are symmetrically distributed about the first stub loading unit, and are arranged between the first output port feeder line and the first input port feeder line; the first E-type dual-mode resonator comprises a first quarter-wavelength resonator and a first stub loading unit, the first stub loading unit is loaded in the center of the U-shaped bent first quarter-wavelength resonator, and the second E-type dual-mode resonator and the first E-type dual-mode resonator are symmetrical with respect to the center of the dielectric substrate.
The novel microstrip power division duplexer further comprises: the third E-type dual-mode resonator is symmetrically distributed around the third branch loading unit; the third E-type dual-mode resonator is arranged between a third output port feeder line and an input port feeder line; the third E-type dual-mode resonator comprises a third half-wavelength resonator and a third stub loading unit, the third stub loading unit is loaded at the center of the U-shaped bent third half-wavelength resonator, and the fourth E-type dual-mode resonator and the third E-type dual-mode resonator are symmetrical with respect to the center of the dielectric substrate.
The novel microstrip power division duplexer further comprises: the polygonal dielectric substrate is a cuboid with the thickness of 0.508 mm.
Compared with the prior art, the invention adopting the technical scheme has the following technical effects:
(1) the invention has compact structure, can be realized on a single PCB, is convenient for processing and integration and has low production cost.
(2) The invention utilizes the resonance mechanism of the E-type dual-mode resonator and the electric field distribution characteristic of the main transmission line, and has the advantages of compact structure, low loss, high selectivity and good out-of-band rejection performance.
(3) The invention has a brand new topological structure, realizes the functions of channel separation and power distribution without an additional feed network, can independently design and control each channel, and shows great design flexibility.
(4) The invention utilizes the isolation resistor connected between the resonators, has good isolation and is suitable for modern wireless communication systems.
Drawings
Fig. 1 is a schematic perspective view of a novel microstrip power division duplexer according to the present invention.
Fig. 2 is a top view of fig. 1.
Fig. 3 is a schematic structural dimension diagram of example 1.
Fig. 4 is an S-parameter simulation diagram of example 1.
Fig. 5 is a simulation diagram of matching characteristics and isolation characteristics S-parameters of two output ports of embodiment 1.
Legend: 1-input port feed line; 2-a first output port feed; 3-a second output port feed; 4-a third output port feed; 5-a fourth output port feed; 6-polygonal dielectric substrate; 7-a metal ground plate; a-a first E-type dual-mode resonator; b-a second E-type dual-mode resonator; a C-third E type dual-mode resonator; d-a fourth E-type dual-mode resonator; r1 — first isolation resistor; r2 — second isolation resistance; via-vias;
11-50 ohm microstrip line conduction band; 12-one-half wavelength input coupling line;
21-a first 50 ohm microstrip conduction band; 22-a first out-coupling line;
31-a second 50 ohm microstrip conduction band; 32-a second out-coupling line;
41-a second 50 ohm microstrip conduction band; 42-second out-coupling line;
51-a second 50 ohm microstrip conduction band; 62-a second out-coupling line;
a1 — first one-half wavelength resonator; a2-first branch loading unit;
b1 — second half-wavelength resonator; b2-second branch loading unit;
c1-third half-wavelength resonator; c2-third branch loading unit;
d1-fourth half-wavelength resonator; d2-fourth branch loading unit.
Detailed Description
The technical scheme of the invention is further explained in detail by combining the attached drawings:
it will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
As shown in fig. 1 and fig. 2, the novel microstrip power division duplexer of the present invention includes a polygonal dielectric substrate 6 having a metal ground plate 7 on a lower surface thereof, and an input port feeder 1, a first output port feeder 2, a second output port feeder 3, a third output port feeder 4, a fourth output port feeder 5, a first output coupling line 22, a second output coupling line 32, a third output coupling line 42, and a fourth output coupling line 52 are disposed on an upper surface of the polygonal dielectric substrate 6. The same first E-type dual-mode resonator A and the same second E-type dual-mode resonator B are respectively arranged between the first output port feeder line 2, the second output port feeder line 3 and the input port feeder line 1, and the same third E-type dual-mode resonator C and the same fourth E-type dual-mode resonator D are respectively arranged between the third output port feeder line 4, the fourth output port feeder line 5 and the input port feeder line 1. A first isolation resistor R1 is arranged between the first E-type dual-mode resonator a and the second E-type dual-mode resonator B, and a second isolation resistor R2 is arranged between the third E-type dual-mode resonator C and the fourth E-type dual-mode resonator D. A via is provided at each end of the first out-coupling line 22, the second out-coupling line 32, the third out-coupling line 42 and the fourth out-coupling line 52.
The input port feeder 1 comprises a 50 ohm microstrip line conduction band 11 and a half-wavelength input coupling line 12, the input end of the 50 ohm microstrip line conduction band 11 is located on one short side of the rectangular dielectric substrate 6, the output end of the 50 ohm microstrip line conduction band is connected with one end of the half-wavelength input coupling line 12, and the free end of the half-wavelength input coupling line 12 points to the other short side of the rectangular dielectric substrate 6.
The first output port feeder 2 comprises a first 50 ohm microstrip line conduction band 21 and a first coupling output line 22, one end of the first 50 ohm microstrip line conduction band 21 is located on the long sides of two adjacent vertical sides of the polygonal dielectric substrate 9, the other end of the first 50 ohm microstrip line conduction band is connected with the end face of the short side of the first coupling output line 22 bent in an L shape, and the L-shaped long side of the first coupling output line 22 is parallel to the vertically adjacent long side of the polygonal dielectric substrate 9 and points to the short side of the polygonal dielectric substrate 9.
The second output port feeder line 3 comprises a second 50 ohm microstrip line conduction band 31 and a second coupling output line 32, one end of the second 50 ohm microstrip line conduction band 31 is located on the long sides of two adjacent vertical edges of the polygonal dielectric substrate 6, the other end of the second 50 ohm microstrip line conduction band 31 is connected with the end face of the short side of the second coupling output line 32 which is bent in an L shape, and the L-shaped long side of the second coupling output line 32 is parallel to the vertically adjacent long side of the polygonal dielectric substrate 6 and points to the short side of the polygonal dielectric substrate 6.
The third output port feeder line 4 comprises a third 50 ohm microstrip line conduction band 41 and a third coupling output line 42, one end of the third 50 ohm microstrip line conduction band 41 is located on the long sides of two adjacent vertical edges of the polygonal dielectric substrate 6, the other end of the third 50 ohm microstrip line conduction band is connected with the end face of the short side of the third coupling output line 42 which is bent in an L shape, and the L-shaped long side of the third coupling output line 42 is parallel to the vertically adjacent long side of the polygonal dielectric substrate 6 and points to the short side of the polygonal dielectric substrate 6.
The fourth output port feeder 5 comprises a fourth 50 ohm microstrip line conduction band 51 and a fourth coupling output line 52, one end of the fourth 50 ohm microstrip line conduction band 51 is located on the long sides of two adjacent vertical sides of the polygonal dielectric substrate 6, the other end of the fourth 50 ohm microstrip line conduction band is connected with the end face of the short side of the fourth coupling output line 52 which is bent in an L shape, and the L-shaped long side of the fourth coupling output line 52 is parallel to the vertically adjacent long side of the polygonal dielectric substrate 6 and points to the short side of the polygonal dielectric substrate 6.
The first E-type dual-mode resonator A is symmetrically distributed about the first stub loading unit A2. The first E-type dual-mode resonator A is arranged between the first output port feeder line 2 and the input port feeder line 1. The first E-type dual-mode resonator a includes a first quarter-wavelength resonator a1 and a first stub loading unit a2, and the first stub loading unit a2 is loaded at the center of the first quarter-wavelength resonator a1 bent in a U-shape.
The second E-type dual-mode resonator B is symmetrically distributed about a second stub loading unit B2. The second E-type dual-mode resonator B is between the second output port feed line 3 and the input port feed line 1. The second E-type dual-mode resonator B comprises a second half-wavelength resonator B1 and a second stub loading unit B2, the second stub loading unit B2 is loaded at the center of the U-shaped bent second half-wavelength resonator B1, and the second E-type dual-mode resonator B and the first E-type dual-mode resonator a are symmetrical with respect to the center of the dielectric substrate.
The third E-type dual-mode resonator C is symmetrically distributed about the third stub loading unit C2. The third E-type dual-mode resonator C is between the third output port feed line 4 and the input port feed line 1. The third E-type dual-mode resonator C includes a third half-wavelength resonator C1 and a third stub loading unit C2, and the third stub loading unit C2 is loaded at the center of the U-bent third half-wavelength resonator C1.
The fourth E-type dual-mode resonator D is symmetrically distributed about a fourth stub loading unit D2. The fourth E-mode dual-mode resonator D is between the fourth output port feed line 5 and the input port feed line 1. The fourth E-type dual-mode resonator D includes a fourth half-wavelength resonator D1 and a fourth stub loading unit D2, the fourth stub loading unit D2 is loaded at the center of the U-bent fourth half-wavelength resonator D1, and the fourth E-type dual-mode resonator D and the third E-type dual-mode resonator C are symmetric with respect to the center of the dielectric substrate.
The vias Via are located at the ends of the first out-coupling line 22, the second out-coupling line 32, the third out-coupling line 42 and the fourth out-coupling line 52, respectively.
The polygonal dielectric substrate 6 is a cuboid with the thickness of 0.508 mm.
The principles of the present invention are described below in conjunction with the appended drawings. In the novel microstrip power division duplexer, the lengths and the widths of the half-wavelength resonators A1, B1, C1 and D1 of the E-type dual-mode resonator A, B, C, D determine the position of a passband, the lengths and the widths of the branch loading units A2, B2, C2 and D2 are adjusted to change the bandwidth and the flatness of the passband, the coupling distances between the half-wavelength input coupling line 12 and the half-wavelength resonators A1, B1, C1 and D1 and the coupling distances between the coupling output lines 22, 32, 42 and 52 and the half-wavelength resonators A1, B1, C1 and D1 have larger influence on the coupling strength, and the smaller the distances are, the larger the coupling strength is; in addition, the isolation degree of the output port is greatly influenced by the isolation resistors R1 and R2, and the optimal isolation degree can be obtained by adjusting the resistance value of the isolation resistors.
The invention processes and corrodes the metal surfaces of the front surface and the back surface of the circuit substrate in the manufacturing process of the printed circuit board, thereby forming the required metal pattern, having simple structure, being realized on a single PCB board, being convenient for processing and integrating and having low production cost. Meanwhile, good power distribution characteristics and filter characteristics are obtained by utilizing the E-type dual-mode resonator and the half-wavelength coupling line field distribution characteristics, and good port isolation characteristics are obtained by skillfully isolating resistors among the resonators. The novel microstrip power division duplexer has high selectivity, small insertion loss and good out-of-band rejection performance, and is suitable for modern wireless communication systems.
The present invention will be described in further detail with reference to examples.
Example 1
The structure of a novel microstrip power division duplexer is shown in fig. 1, the top view is shown in fig. 2, and the relevant dimension specification is shown in fig. 3. The dielectric substrate 6 used had a relative dielectric constant of 3.55, a thickness of 0.508mm and a loss tangent of 0.0027. With reference to fig. 3, the size parameters of the power division duplexer are as follows: l1 is 18.5, L2 is 15.5, L3 is 14.9, L4 is 12.6, L5 is 5, L6 is 5, L7 is 4, W1 is 0.5, W2 is 1.2, W3 is 1.2, W4 is 0.5, Lp1 is 5, Lp2 is 5, Wp1 is 1.5, Lf1 is 1.8, Wf1 is 0.1, Wf2 is 0.5, g1 is 0.2, g2 is 0.2, s is 0.5, F is 1, R1 is 200, R450 Ω 2 is 4.
In this embodiment, the power division duplexer is modeled and simulated in electromagnetic simulation software hfss.13.0, and a physical test of the power division duplexer is tested in an Agilent N5244A network analyzer. Fig. 4 is a simulation of S parameter and a waveform diagram of an object of the power division duplexer in this example, and is accompanied by a processed object, and it can be seen from the diagram that the center frequencies of the pass bands of the microstrip power division duplexer are respectively 2.45GHz and 2.98GHz, the return loss in the pass bands is lower than 19.2dB and 15.3dB, and the minimum insertion loss is 1.6dB and 1.9 dB. The two transmission zeros outside the passband enable the power division filter of the embodiment to have good frequency selectivity and second harmonic suppression.
Fig. 5 is an S-parameter simulation and physical test chart of the power output port matching characteristic and the isolation characteristic of the power division duplexer in this example, where 1 is an input port feeder; 2 is a first output port feeder; 3 is a second output port feeder; 4 is a third output port feeder; and 5, fourth output port feeder lines which correspond to the previous figures one by one. As can be seen from the figure, the output port isolation in the dual passband of the power splitter of this example is better than 28.9dB and 21.0dB, respectively.
In summary, the invention provides a novel microstrip power division duplexer, which combines the field distribution characteristics of an E-type dual-mode resonator and a half-wavelength coupling line, and utilizes the indirect isolation resistance of the resonator to realize a power division duplexer with compact structure, low loss, high selectivity, good isolation and better out-of-band inhibition performance, and the power division duplexer is very suitable for modern wireless communication systems.
The foregoing is only a partial embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (5)
1. The utility model provides a novel microstrip merit divide duplexer which characterized in that: the antenna comprises a polygonal dielectric substrate (6) with a metal grounding plate (7) arranged on the lower surface, wherein an input port feeder (1), a first output port feeder (2), a second output port feeder (3), a third output port feeder (4) and a fourth output port feeder (5) are arranged on the upper surface of the polygonal dielectric substrate (6);
the first output port feeder line (2) comprises a first 50 ohm microstrip line conduction band (21) and a first coupling output line (22), one end of the first 50 ohm microstrip line conduction band (21) is located on the long sides of two adjacent vertical edges of the polygonal dielectric substrate (6), the other end of the first 50 ohm microstrip line conduction band is connected with the end face of the short side of the first coupling output line (22) bent in an L shape, and the L-shaped long side of the first coupling output line (22) is parallel to the long side of the polygonal dielectric substrate (6) and points to the short side of the polygonal dielectric substrate (6);
the second output port feeder line (3) comprises a second 50 ohm microstrip line conduction band (31) and a second coupling output line (32), one end of the second 50 ohm microstrip line conduction band (31) is located on the long sides of two adjacent vertical edges of the polygonal dielectric substrate (6), the other end of the second 50 ohm microstrip line conduction band is connected with the end face of the short side of the second coupling output line (32) which is bent in an L shape, and the L-shaped long side of the second coupling output line (32) is parallel to the long side of the polygonal dielectric substrate (6) and points to the short side of the polygonal dielectric substrate (6);
the third output port feeder line (4) comprises a third 50 ohm microstrip line conduction band (41) and a third coupling output line (42), one end of the third 50 ohm microstrip line conduction band (41) is located on the long sides of two adjacent vertical edges of the polygonal dielectric substrate (6), the other end of the third 50 ohm microstrip line conduction band is connected with the end face of the short side of the third coupling output line (42) which is bent in an L shape, and the L-shaped long side of the third coupling output line (42) is parallel to the long side of the polygonal dielectric substrate (6) and points to the short side of the polygonal dielectric substrate (6);
the fourth output port feeder line (5) comprises a fourth 50 ohm microstrip line conduction band (51) and a fourth coupling output line (52), one end of the fourth 50 ohm microstrip line conduction band (51) is located on the long sides of two adjacent vertical edges of the polygonal dielectric substrate (6), the other end of the fourth 50 ohm microstrip line conduction band is connected with the end face of the short side of the fourth coupling output line (52) bent in an L shape, and the L-shaped long side of the fourth coupling output line (52) is parallel to the long side of the polygonal dielectric substrate (6) and points to the short side of the polygonal dielectric substrate (6);
the first E-type dual-mode resonator (A) and the second E-type dual-mode resonator (B) which are the same are respectively arranged between the first output port feeder line (2), the second output port feeder line (3) and the input port feeder line (1), and the third E-type dual-mode resonator (C) and the fourth E-type dual-mode resonator (D) which are the same are respectively arranged between the third output port feeder line (4), the fourth output port feeder line (5) and the input port feeder line (1); a first isolation resistor (R1) is arranged between the first E-type dual-mode resonator (A) and the second E-type dual-mode resonator (B), and a second isolation resistor (R2) is arranged between the third E-type dual-mode resonator (C) and the fourth E-type dual-mode resonator (D);
a through hole is respectively formed in the end part, back to the short side, of each L-shaped long side of each of the first output coupling line (22), the second output coupling line (32), the third output coupling line (42) and the fourth output coupling line (52);
the second E-type dual-mode resonator (B) and the first E-type dual-mode resonator (A) are symmetrical with respect to the center of the dielectric substrate, and the fourth E-type dual-mode resonator (D) and the third E-type dual-mode resonator (C) are symmetrical with respect to the center of the dielectric substrate.
2. The novel microstrip power division duplexer according to claim 1, characterized in that: the input port feeder line (1) comprises a 50 ohm microstrip line conduction band (11) and a half-wavelength input coupling line (12), the input end of the 50 ohm microstrip line conduction line (11) is located on one short side of the rectangular dielectric substrate (6), the output end of the 50 ohm microstrip line conduction band conduction line is connected with one end of the half-wavelength input coupling line (12), and the free end of the half-wavelength input coupling line (12) points to the other short side of the rectangular dielectric substrate (6).
3. The novel microstrip power division duplexer according to claim 1, characterized in that: the first E-type dual-mode resonators (A) are symmetrically distributed about a first stub loading unit (A2), and are arranged between a first output port feeder line (2) and an input port feeder line (1); the first E-type dual-mode resonator (A) comprises a first quarter-wavelength resonator (A1) and a first stub loading unit (A2), the first stub loading unit (A2) is loaded in the center of the U-shaped bent first quarter-wavelength resonator (A1), and the second E-type dual-mode resonator (B) and the first E-type dual-mode resonator (A) are symmetrical with respect to the center of the dielectric substrate.
4. The novel microstrip power division duplexer according to claim 1, characterized in that: the third E-type dual-mode resonator (C) is symmetrically distributed about a third stub loading unit (C2); the third E-type dual-mode resonator (C) is arranged between a third output port feeder line (4) and an input port feeder line (1); the third E-type dual-mode resonator (C) comprises a third half-wavelength resonator (C1) and a third stub loading unit (C2), the third stub loading unit (C2) is loaded at the center of the U-shaped bent third half-wavelength resonator (C1), and the fourth E-type dual-mode resonator (D) and the third E-type dual-mode resonator (C) are symmetrical about the center of the dielectric substrate.
5. The novel microstrip power division duplexer according to claim 1, characterized in that: the polygonal dielectric substrate (6) is a cuboid with the thickness of 0.508 mm.
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| CN110061336B (en) * | 2019-05-17 | 2023-12-15 | 云南大学 | Packaged integrated substrate gap waveguide four-power divider |
| CN110429363B (en) * | 2019-08-29 | 2021-06-01 | 南京智能高端装备产业研究院有限公司 | Three-passband power division filter based on multimode Y-shaped resonator |
| CN111384534B (en) * | 2020-02-28 | 2021-08-27 | 南京智能高端装备产业研究院有限公司 | Three-way band-pass power division filter |
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| EP1154511A3 (en) * | 2000-05-11 | 2003-05-07 | Murata Manufacturing Co., Ltd. | Adjusting method for electrical characteristics of microstrip line filter, duplexer, communication device, and microstrip line type resonator |
| CN102832434B (en) * | 2012-08-21 | 2014-10-08 | 华南理工大学 | Equal power splitter integrating band-pass filtering function |
| CN102832433B (en) * | 2012-08-21 | 2015-01-28 | 华南理工大学 | Non-uniform power divider with integrated band-pass filtering function |
| CN103311613B (en) * | 2013-05-22 | 2015-06-10 | 南京航空航天大学 | Matching network-free common-mode rejection balancing micro-strip duplexer |
| CN106797064B (en) * | 2014-10-23 | 2019-09-13 | 华为技术有限公司 | Micro-strip multiplexer |
| CN104934663A (en) * | 2015-06-23 | 2015-09-23 | 南京理工大学 | Broadband high-selectivity balanced band-pass filter based on multimode resonators |
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| CN106299560A (en) * | 2016-08-22 | 2017-01-04 | 淮阴工学院 | A kind of high selectivity broadband merit filter-divider |
| CN106935948A (en) * | 2017-02-10 | 2017-07-07 | 深圳大学 | A kind of work(filter-divider |
| CN106711556B (en) * | 2017-02-14 | 2020-09-22 | 华南理工大学 | Miniaturized microstrip quadruplex ware |
| CN106972233A (en) * | 2017-05-10 | 2017-07-21 | 厦门大学 | A kind of four tunnel filtering type power splitters based on three line coupled structures |
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