CN113381144B - High-performance balanced band-pass filter based on equilateral triangle patch - Google Patents
High-performance balanced band-pass filter based on equilateral triangle patch Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/20327—Electromagnetic interstage coupling
Abstract
The invention discloses a high-performance balanced band-pass filter based on equilateral triangle patches, which comprises a layer of dielectric substrate, wherein the upper surface of the dielectric substrate is provided with a first triangle patch, a second triangle patch, a third triangle patch, a fourth triangle patch, a fifth triangle patch, a sixth triangle patch, a first input port feeder, a second input port feeder, a first output port feeder, a second output port feeder, a top layer first slot line, a top layer second slot line, a top layer third slot line, a top layer fourth slot line, a top layer fifth slot line and a top layer sixth slot line, and the bottom layer of the dielectric substrate is a grounding metal plate. The balanced band-pass filter has a simple structure, can be realized on a single PCB and is convenient to process and integrate; six compact triangular patches are adopted, the circuit space is fully utilized, and the circuit volume is greatly reduced.
Description
Technical Field
The invention relates to the technical field of microwave passive devices, in particular to a high-performance balanced band-pass filter based on an equilateral triangle patch.
Background
Modern wireless communication systems require compact and high performance balanced bandpass filters. In recent years, filters play a key role in selecting and filtering signals in wireless communication systems, and because many radio frequency devices have strong robustness to electromagnetic interference and common mode noise, introduction of a balancing function is required, so that the number of microwave devices used in the same system can be greatly reduced by integration of balancing and band-pass filtering. Meanwhile, with the continuous development of modern wireless communication systems, the requirements on the performance and the integration level of the band-pass balance filter device are also improved.
A Dual-Mode Ring resonator is introduced in document 1[ w.feng, w.che, and q.xue, "New Balance-Applications for Dual-Mode Ring," IEEE micro.maga.vol., No., pp.15-23, july.2019 ]. The circuit has the advantages of more transmission zeros, high selectivity, strong harmonic suppression capability and the like, but the circuit integration level needs to be further improved.
Document 2[ g.g.roberto, m.f.jos-mari a, w.f.f and p.dimitra, "Balanced symmetric Quasi-reflective Single and Dual-Band Planar Filters," IEEE micro.wireless company.lett.vol.28, No.9, pp.798-800, sept.2018 ] consists of a direct input-output k-order branch BPF, the characteristic impedance of the quarter-wavelength terminal of which is connected to a virtual short circuit for differential mode operation. Although the above designs use different resonators, they all use microstrip structures, resulting in a large amount of space in the circuit being underutilized, making the circuit too bulky.
Document 3[ h.liu, t.liu and q.zhang, "Compact Balanced band transmit SIR Pairs and Spoof Surface plasma polarization feed Structure," IEEE micro.wire company.lett.vol.28, No.11, pp.987-989, No. 2018 ] designs a Compact Balanced BPF with high impedance bandwidth and high CM rejection Using Asymmetric SIR Pairs, but its differential mode bandwidth passband is not ideal enough.
Document 4[ q.liu, j.wang, g.zhang, l.zhu and w.wu, "a New Design Approach for Balanced bandwidth," IEEE micro.wire composite.lett.vol.29, No.1, pp.5-7, jun.2019 ] utilizes the resonance characteristics of single-wall double-wall isosceles right triangle patch resonators to achieve the effect of Balanced filtering. Compared with documents 2 to 3, document 4 employs patch resonance, and there is no vacant position in the circuit, making full use of space. However, it cannot control the resonant frequency, and cannot further improve the circuit integration.
Disclosure of Invention
The purpose of the invention is as follows: the technical problem to be solved by the invention is to provide a high-performance balanced band-pass filter based on an equilateral triangle patch aiming at the defects of the prior art.
In order to solve the technical problem, the invention discloses a high-performance balanced band-pass filter based on an equilateral triangle patch, which comprises a dielectric substrate, wherein a bottom metal grounding plate is arranged on the lower surface of the dielectric substrate, and a first triangle patch, a second triangle patch, a third triangle patch, a fourth triangle patch, a fifth triangle patch, a sixth triangle patch, a first input port feeder, a second input port feeder, a first output port feeder and a second output port feeder are arranged on the upper surface of the dielectric substrate; the six triangular patches are all equilateral triangles with equal side length; the third triangular patch is respectively coupled with the edges of the first triangular patch, the second triangular patch and the sixth triangular patch, and the distance between each edge is WS1、WS1' and WS2The sixth triangular patch is also coupled with the edges of the fourth triangular patch and the fifth triangular patch, and the distances between the edges are WS3And WS3'; the first triangular patch is provided with a first slot line, the second triangular patch is provided with a second slot line, the third triangular patch is provided with a third slot line, the fourth triangular patch is provided with a fourth slot line, the fifth triangular patch is provided with a fifth slot line, and the sixth triangular patch is provided with a sixth slot line;
one end of the first input port feeder line and one end of the second input port feeder line are both connected with the first side edge of the medium substrate, the other end of the first input port feeder line is connected with the first triangular patch, and the other end of the second input port feeder line is connected with the second triangular patch;
one end of the first output port feeder line and one end of the second output port feeder line are both connected with the second side edge of the dielectric substrate, the other end of the first output port feeder line is connected with the fourth triangular patch, and the other end of the second output port feeder line is connected with the fifth triangular patch.
In one implementation manner, the first input port feeder includes a first input 50 ohm microstrip conduction band and a first impedance match line, one end of the first input 50 ohm microstrip conduction band extends to the first side edge of the dielectric substrate, the other end of the first input 50 ohm microstrip conduction band is connected to one end of the first impedance match line, and the other end of the first impedance match line is connected to the first triangular patch; the connection position of the first input 50 ohm microstrip line conduction band and the first side edge of the dielectric substrate is a first input end.
In one implementation manner, the second input port feeder includes a second input 50 ohm microstrip conduction band and a second impedance match line, one end of the second input 50 ohm microstrip conduction band extends to the first side edge of the dielectric substrate, the other end of the second input 50 ohm microstrip conduction band is connected to one end of the second impedance match line, and the other end of the second impedance match line is connected to the second triangular patch; the connection position of the conduction band of the second input 50-ohm microstrip line and the first side edge of the dielectric substrate is a second input end.
In one implementation manner, the first output port feeder includes a first output 50 ohm microstrip line conduction band and a third impedance match line, one end of the first output 50 ohm microstrip line conduction band extends to the second side edge of the dielectric substrate, the other end of the first output 50 ohm microstrip line conduction band is connected to one end of the third impedance match line, and the other end of the third impedance match line is connected to the fourth triangular patch; the joint of the conduction band of the first output 50 ohm microstrip line and the second side edge of the dielectric substrate is a first output end.
In one implementation manner, the second output port feeder includes a second output 50 ohm microstrip line conduction band and a fourth impedance match line, one end of the second output 50 ohm microstrip line conduction band extends to the second side edge of the dielectric substrate, the other end of the second output 50 ohm microstrip line conduction band is connected to one end of the fourth impedance match line, and the other end of the fourth impedance match line is connected to the fifth triangular patch; the joint of the conduction band of the second output 50-ohm microstrip line and the second side edge of the dielectric substrate is a second output end.
In one implementation, the first slotline is located on a midline of the first triangular patch, and a notch of the first slotline is located at a vertex of the first triangular patch; the second groove line is positioned on the central line of the second triangular patch, and the notch of the second groove line is positioned at the vertex of the second triangular patch; the third slot line is positioned on the middle line of the third triangular patch, and the notch of the third slot line is positioned at the vertex of the third triangular patch; the extension lines of the first slot line, the second slot line and the third slot line are intersected at the same point;
the fourth slot line is positioned on the middle line of the fourth triangular patch, and the notch of the fourth slot line is positioned at the vertex of the fourth triangular patch; the fifth groove line is positioned on the central line of the fifth triangular patch, and the notch of the fifth groove line is positioned at the vertex of the fifth triangular patch; the sixth groove line is positioned on the central line of the sixth triangular patch, and the notch of the sixth groove line is positioned at the vertex of the sixth triangular patch; the extension line of the fourth slot line, the extension line of the fifth slot line and the extension line of the sixth slot line are intersected at the same point;
the width of the first slot line is W1Length of L1(ii) a The width of the second slot line is W1', length L1'; the width of the third slot line is W2Length of L2(ii) a The width of the fourth slot line is W4Length of L4(ii) a The width of the fifth slot line is W4', length L4'; the width of the sixth slot line is W3Length of L3。
According to the equilateral triangular magnetic field distribution, rectangular slot lines are arranged on the center line where the magnetic field is strongest. The resonance frequency of the equilateral triangle can be changed through the rectangular slot line, and the resonance frequency is reduced under the same circuit size, so that the miniaturization of the circuit is further realized.
In one implementation manner, the third slot line and the sixth slot line are located on a central axis AA ' of the dielectric substrate, the first triangular patch and the second triangular patch are symmetric with respect to the central axis AA ' of the dielectric substrate, and the fourth triangular patch and the fifth triangular patch are symmetric with respect to the central axis AA ' of the dielectric substrate. A symmetrical structure is integrally formed to obtain a good common mode rejection effect.
In one implementation, the end of the first input port feeder connected to the first triangular patch is close to the first vertex V of the first triangular patch1And is positioned on the edge perpendicular to the first slot line; the first vertex V1The vertex opposite to the edge where the first triangular patch and the third triangular patch are coupled is the edge; one side of the joint of the first input port feeder line and the first triangular patch and a first vertex V1Is L from each otherP1The distance between the first input port feeder line and the two sides of the joint of the first triangular patch is LP2The side length of the first triangular patch is LP1+LP2+LP3；
The second input port feed line and the first input port feed line are symmetrical about a central axis AA' of the dielectric substrate. Forming a pair of balanced input ports. The first input port feed line and the second input port feed line both achieve the best external coupling at said location.
In one implementation, one end of the first output port feeder line connected to the fourth triangular patch is close to a second vertex V of the fourth triangular patch2And is positioned on the edge vertical to the fourth slot line; the second vertex V2The vertex of the side where the edges of the fourth triangular patch and the sixth triangular patch are coupled is far away from the notch of the fourth slot line; one side of the joint of the first output port feeder line and the fourth triangular patch and a second vertex V2Is L from each otherP4The distance between the first output port feeder line and the two sides of the connection part of the fourth triangular patch is LP5The side length of the fourth triangular patch is LP4+LP5+LP6And L isP1+LP2+LP3＝LP4+LP5+LP6；
The second output port feed line and the first output port feed line are symmetrical about a central axis AA' of the dielectric substrate to form a pair of balanced output ports. The first output port feed line and the second output port feed line both achieve the best external coupling at said location.
Has the advantages that:
the front metal surface of the circuit substrate is processed and corroded in the manufacturing process through the printed circuit board manufacturing process, so that a required metal pattern is formed, the structure is simple, the circuit substrate can be realized on a single PCB, and the circuit substrate is convenient to process and integrate. Meanwhile, the design not only realizes the function of a good balance band-pass filter, but also fully utilizes the circuit space and greatly reduces the circuit volume due to the adoption of six compact triangular patches.
The present application designs a balanced bandpass filter using the resonant mode of an equilateral triangular patch TM 01. And rectangular gap disturbance on the patch is utilized to change the resonant frequency of the patch, and the resonant frequency is reduced under the same circuit size, so that the miniaturization of the circuit is further realized, and the system integration level is improved.
Drawings
The above and other advantages of the present invention will become more apparent from the following detailed description of the invention when taken in conjunction with the accompanying drawings.
Fig. 1 is a schematic perspective view of a high-performance balanced bandpass filter based on an equilateral triangular patch according to the present invention.
Fig. 2 is a top view of fig. 1.
Fig. 3 is a schematic structural dimension diagram of example 1.
Fig. 4 is an S-parameter simulation diagram of example 1.
FIG. 5 is a diagram showing a processed product in example 1.
In fig. 1, a first input port feeder 1, a second input port feeder 2, a first output port feeder 3, a second output port feeder 4, a first triangular patch 5, a second triangular patch 6, a third triangular patch 7, a fourth triangular patch 8, a fifth triangular patch 9, a sixth triangular patch 10, a first slot line 51, a second slot line 61, a third slot line 71, a fourth slot line 81, a fifth slot line 91, a sixth slot line 101, a dielectric substrate 102, and a bottom metal ground plate 104. The impedance matching circuit comprises a first input 50-ohm microstrip conduction band 11, a first impedance matching line 12, a second input 50-ohm microstrip conduction band 21, a second impedance matching line 22, a first output 50-ohm microstrip conduction band 31, a third impedance matching line 32, a second output 50-ohm microstrip conduction band 41 and a fourth impedance matching line 42.
Detailed Description
Embodiments of the present invention will be described below with reference to the accompanying drawings.
Example 1:
the embodiment 1 of the invention discloses a high-performance balanced band-pass filter based on an equilateral triangle patch, which is suitable for scenes in a modern wireless communication system needing to effectively suppress noise generated by environment and internal active devices, and is widely applied to a fully balanced communication system, particularly the front end of a radio frequency circuit.
As shown in fig. 1 and fig. 2, the present embodiment provides a high performance balanced bandpass filter based on equilateral triangle patches, including a dielectric substrate 102, a bottom metal ground plate 104 is disposed on a lower surface of the dielectric substrate 102, and a first triangle patch 5, a second triangle patch 6, a third triangle patch 7, a fourth triangle patch 8, a fifth triangle patch 9, a sixth triangle patch 10, a first input port feeder 1, a second input port feeder 2, a first output port feeder 3, and a second output port feeder 4 are disposed on an upper surface of the dielectric substrate 102; the six triangular patches are all equilateral triangles with equal side length; the third triangular patch 7 is coupled with the edges of the first triangular patch 5, the second triangular patch 6 and the sixth triangular patch 10 respectively, and the distances between the edges are WS1、WS1' and WS2The sixth triangular patch 10 is further edge-coupled to the fourth triangular patch 8 and the fifth triangular patch 9, with a distance W between the edgesS3And WS3'; the first triangular patch 5 is provided with a first slot line 51, the second triangular patch 6 is provided with a second slot line 61, the third triangular patch 7 is provided with a third slot line 71, the fourth triangular patch 8 is provided with a fourth slot line 81, the fifth triangular patch 9 is provided with a fifth slot line 91, and the sixth triangular patch 10 is provided with a sixth slot line 101;
one end of the first input port feeder line 1 and one end of the second input port feeder line 2 are both connected with the first side edge 1021 of the dielectric substrate 102, the other end of the first input port feeder line 1 is connected with the first triangular patch 5, and the other end of the second input port feeder line 2 is connected with the second triangular patch 6;
one end of the first output port feeder 3 and one end of the second output port feeder 4 are both connected to the second side 1022 of the dielectric substrate 102, the other end of the first output port feeder 3 is connected to the fourth triangular patch 8, and the other end of the second output port feeder 4 is connected to the fifth triangular patch 9.
In this embodiment, the first input port feeder 1 includes a first input 50 ohm microstrip conduction band 11 and a first impedance match line 12, one end of the first input 50 ohm microstrip conduction band 11 extends to a first side 1021 of the dielectric substrate 102, the other end is connected to one end of the first impedance match line 12, and the other end of the first impedance match line 12 is connected to the first triangular patch 5; the junction of the first input 50 ohm microstrip conduction band 11 and the first side 1021 of the dielectric substrate 102 is a first input terminal.
In this embodiment, the second input port feeder 2 includes a second input 50 ohm microstrip conduction band 21 and a second impedance match line 22, one end of the second input 50 ohm microstrip conduction band 21 extends to the first side 1021 of the dielectric substrate 102, the other end is connected to one end of the second impedance match line 22, and the other end of the second impedance match line 22 is connected to the second triangular patch 6; the junction of the second input 50 ohm microstrip conduction band 21 and the first side 1021 of the dielectric substrate 102 is a second input.
In this embodiment, the first output port feeder 3 includes a first output 50 ohm microstrip conduction band 31 and a third impedance match line 32, one end of the first output 50 ohm microstrip conduction band 31 extends to the second side 1022 of the dielectric substrate 102, the other end is connected to one end of the third impedance match line 32, and the other end of the third impedance match line 32 is connected to the fourth triangular patch 8; the junction of the first output 50 ohm microstrip conduction band 31 and the second side 1022 of the dielectric substrate 102 is a first output.
In this embodiment, the second output port feeder 4 includes a second output 50 ohm microstrip conduction band 41 and a fourth impedance match line 42, one end of the second output 50 ohm microstrip conduction band 41 extends to the second side 1022 of the dielectric substrate 102, the other end is connected to one end of the fourth impedance match line 42, and the other end of the fourth impedance match line 42 is connected to the fifth triangular patch 9; the junction of the second output 50 ohm microstrip conduction band 41 and the second side 1022 of the dielectric substrate 102 is a second output.
In this embodiment, the first slot line 51 is located on the central line of the first triangular patch 5, and the notch of the first slot line 51 is located at the vertex of the first triangular patch 5; the second slot line 61 is positioned on the middle line of the second triangular patch 6, and the notch of the second slot line 61 is positioned at the vertex of the second triangular patch 6; the third slot line 71 is located on the middle line of the third triangular patch 7, and the notch of the third slot line 71 is located at the vertex of the third triangular patch 7; the extension lines of the first slot line 51, the second slot line 61 and the third slot line 71 intersect at the same point;
the fourth slot line 81 is located on the central line of the fourth triangular patch 8, and the notch of the fourth slot line 81 is located at the vertex of the fourth triangular patch 8; the fifth slot line 91 is positioned on the central line of the fifth triangular patch 9, and the notch of the fifth slot line 91 is positioned at the vertex of the fifth triangular patch 9; the sixth slot line 101 is located on the central line of the sixth triangular patch 10, and the notch of the sixth slot line 101 is located at the vertex of the sixth triangular patch 10; the extension line of the fourth slot line 81, the extension line of the fifth slot line 91 and the extension line of the sixth slot line 101 intersect at the same point;
the first slot line 51 has a width W1Length of L1(ii) a The width of the second slot line 61 is W1', length L1'; the width of the third slot line 71 is W2Length of L2(ii) a The fourth slot line 81 has a width W4Length of L4(ii) a The width of the fifth slot line 91 is W4', length L4'; the sixth slot line 101 has a width W3Length of L3。
In this embodiment, the third slot line 71 and the sixth slot line 101 are located on a central axis AA ' of the dielectric substrate 102, the first triangular patch 5 and the second triangular patch 6 are symmetric with respect to the central axis AA ' of the dielectric substrate 102, and the fourth triangular patch 8 and the fifth triangular patch 9 are symmetric with respect to the central axis AA ' of the dielectric substrate 102.
In this embodiment, the end of the first input port feeder 1 connected to the first triangular patch 5 is close to the first vertex V of the first triangular patch 51And is located on the side perpendicular to the first slot line 51; the first vertex V1The vertex opposite to the edge where the edges of the first triangular patch 5 and the third triangular patch 7 are coupled; one side of the joint of the first input port feeder line 1 and the first triangular patch 5 and a first vertex V1Is L from each otherP1The distance between the two sides of the joint of the first input port feeder line 1 and the first triangular patch 5 is LP2The side length of the first triangular patch 5 is LP1+LP2+LP3；
The second input port feed line 2 is symmetrical to the first input port feed line 1 about the central axis AA' of the dielectric substrate 102.
In this embodiment, one end of the first output port feeder 3 connected to the fourth triangular patch 8 is close to the second vertex V of the fourth triangular patch 82And is located on the side perpendicular to the fourth slot line 81; the second vertex V2The vertex of the side where the edges of the fourth triangular patch 8 and the sixth triangular patch 10 are coupled is the vertex, and the notch is far away from the fourth slot line 81; one side of the joint of the first output port feeder line 3 and the fourth triangular patch 8 and the second vertex V2Is L from each otherP4The distance between the two sides of the joint of the first output port feeder line 3 and the fourth triangular patch 8 is LP5The side length of the fourth triangular patch 8 is LP4+LP5+LP6And L isP1+LP2+LP3＝LP4+LP5+LP6；
The second output port feed line 4 is symmetrical to the first output port feed line 3 about the central axis AA' of the dielectric substrate 102.
The embodiment processes and corrodes the metal surface on the front surface of the circuit substrate in the manufacturing process through the printed circuit board manufacturing process, thereby forming the required metal pattern, having simple structure, being capable of being realized on a single PCB and being convenient for processing and integration. Meanwhile, the design not only realizes the function of balancing the band-pass filter, but also fully utilizes the circuit space and greatly reduces the circuit volume due to the adoption of six compact triangular patches. The present invention is described in further detail below.
The structure of example 1 is shown in fig. 1, the top view is shown in fig. 2, the relevant dimensions are shown in fig. 3, and the processing object diagram is shown in fig. 5. The adopted dielectric substrate 102 matrix is RO4003 matrix, the relative dielectric constant is 3.55, the thickness is 0.508mm, and the loss tangent is 0.0027. With reference to fig. 3, the dimensions of the high performance balanced bandpass filter using equilateral triangular patches are as follows: w1＝W1’＝0.34mm,W2＝0.34mm，W3＝0.3mm,W4＝W4’＝0.3mm,WS1＝WS1’＝0.2mm,WS2＝0.26mm,WS3＝WS3’＝0.22mm,L1＝L1’＝7.55mm，L2＝7.5mm,L3＝7.5mm,L4＝L4’＝7.6mm,LP1＝0.66mm,LP2＝1.25mm,LP3＝8.5mm,LP4＝0.66mm,LP5＝1.25mm,LP6The total area of the balanced band-pass filter excluding the 50 ohm microstrip line conduction band is 21.1 × 18.4mm2The corresponding waveguide length dimension is 0.75 lambdag×0.65λgWherein λ isgIs the waveguide length at the center frequency.
The integrated high-performance balanced band-pass filter of the embodiment is modeled and simulated in electromagnetic simulation software HFSS.18.0. Fig. 4 is a simulation diagram of S-parameters of the dual-passband balanced filter using the dual-layer circular patch in this embodiment, and it can be seen from the simulation diagram that the center frequency of the integrated high-performance balanced bandpass filter is 5.7GHz, the 3-dB relative bandwidth is 11.5%, the two transmission zeros outside the band are 5GHz and 6.5GHz, respectively, the return loss in the passband is lower than 20dB, the minimum insertion loss in the band is 0.75dB, and the minimum common mode rejection is 34 dB.
In summary, the high-performance balanced band-pass filter based on the equilateral triangle patch of the present embodiment. The balanced bandpass filter was designed using the resonant mode of the equilateral triangular patch TM 01. And the resonance frequency is changed by using the disturbance of the slot line on the patch, thereby further realizing the miniaturization of the circuit. The balanced bandpass filter is well suited for use in modern wireless communication systems.
The present invention provides a concept and a method for a high performance balanced band pass filter based on equilateral triangle patch, and a plurality of methods and ways for implementing the technical scheme, and the above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations should also be regarded as the protection scope of the present invention. All the components not specified in the present embodiment can be realized by the prior art.
Claims (8)
1. A high-performance balanced band-pass filter based on equilateral triangle patches is characterized by comprising a dielectric substrate (102), wherein a bottom layer metal grounding plate (104) is arranged on the lower surface of the dielectric substrate (102), and a first triangle patch (5), a second triangle patch (6), a third triangle patch (7), a fourth triangle patch (8), a fifth triangle patch (9), a sixth triangle patch (10), a first input port feeder (1), a second input port feeder (2), a first output port feeder (3) and a second output port feeder (4) are arranged on the upper surface of the dielectric substrate (102); the six triangular patches are all equilateral triangles with equal side length; the third triangular patch (7) is respectively coupled with the edges of the first triangular patch (5), the second triangular patch (6) and the sixth triangular patch (10), and the distances between the edges are WS1、WS1' and WS2The sixth triangular patch (10) is also coupled to the edges of the fourth triangular patch (8) and the fifth triangular patch (9), the distances between the edges being WS3And WS3'; the triangular patch is characterized in that a first groove line (51) is arranged on the first triangular patch (5), a second groove line (61) is arranged on the second triangular patch (6), a third groove line (71) is arranged on the third triangular patch (7), a fourth groove line (81) is arranged on the fourth triangular patch (8), and a fifth groove line (81) is arranged on the fifth triangular patch (9)A groove line (91), and a sixth groove line (101) is arranged on the sixth triangular patch (10);
one end of the first input port feeder line (1) and one end of the second input port feeder line (2) are both connected with a first side edge (1021) of the dielectric substrate (102), the other end of the first input port feeder line (1) is connected with the first triangular patch (5), and the other end of the second input port feeder line (2) is connected with the second triangular patch (6);
one end of the first output port feeder line (3) and one end of the second output port feeder line (4) are both connected with a second side edge (1022) of the dielectric substrate (102), the other end of the first output port feeder line (3) is connected with the fourth triangular patch (8), and the other end of the second output port feeder line (4) is connected with the fifth triangular patch (9);
the first groove line (51) is positioned on the middle line of the first triangular patch (5), and the notch of the first groove line (51) is positioned at the vertex of the first triangular patch (5); the second groove line (61) is positioned on the middle line of the second triangular patch (6), and the notch of the second groove line (61) is positioned at the vertex of the second triangular patch (6); the third groove line (71) is positioned on the middle line of the third triangular patch (7), and the notch of the third groove line (71) is positioned at the vertex of the third triangular patch (7); the extension line of the first slot line (51), the extension line of the second slot line (61) and the extension line of the third slot line (71) intersect at the same point;
the fourth groove line (81) is positioned on the central line of the fourth triangular patch (8), and the notch of the fourth groove line (81) is positioned at the vertex of the fourth triangular patch (8); the fifth groove line (91) is positioned on the middle line of the fifth triangular patch (9), and the notch of the fifth groove line (91) is positioned at the vertex of the fifth triangular patch (9); the sixth groove line (101) is positioned on the middle line of the sixth triangular patch (10), and the notch of the sixth groove line (101) is positioned at the vertex of the sixth triangular patch (10); the extension line of the fourth slot line (81), the extension line of the fifth slot line (91) and the extension line of the sixth slot line (101) intersect at the same point; the width of the first slot line (51) is W1Length of L1(ii) a The width of the second slot line (61) is W1', length L1'; the width of the third slot line (71) is W2Length of L2(ii) a The fourth grooveThe width of the wire (81) is W4Length of L4(ii) a The width of the fifth slot line (91) is W4', length L4'; the width of the sixth slot line (101) is W3Length of L3。
2. The equilateral triangular patch-based high-performance balanced band-pass filter according to claim 1, wherein the first input port feeder (1) includes a first input 50-ohm microstrip conduction band (11) and a first impedance match line (12), one end of the first input 50-ohm microstrip conduction band (11) extends to the first side (1021) of the dielectric substrate (102), the other end of the first input 50-ohm microstrip conduction band is connected with one end of the first impedance match line (12), and the other end of the first impedance match line (12) is connected to the first triangular patch (5); the connection position of the first input 50 ohm microstrip line conduction band (11) and the first side edge (1021) of the dielectric substrate (102) is a first input end.
3. The equilateral triangular patch-based high-performance balanced band-pass filter according to claim 1, wherein the second input port feeder (2) includes a second input 50-ohm microstrip conduction band (21) and a second impedance match line (22), one end of the second input 50-ohm microstrip conduction band (21) extends to the first side (1021) of the dielectric substrate (102), the other end of the second input 50-ohm microstrip conduction band is connected with one end of the second impedance match line (22), and the other end of the second impedance match line (22) is connected to the second triangular patch (6); the joint of the second input 50 ohm microstrip conduction band (21) and the first side edge (1021) of the dielectric substrate (102) is a second input end.
4. The equilateral triangular patch-based high-performance balanced band-pass filter according to claim 1, wherein the first output port feeder (3) includes a first output 50-ohm microstrip conduction band (31) and a third impedance match line (32), one end of the first output 50-ohm microstrip conduction band (31) extends to the second side (1022) of the dielectric substrate (102), the other end is connected with one end of the third impedance match line (32), and the other end of the third impedance match line (32) is connected to the fourth triangular patch (8); the joint of the first output 50 ohm microstrip line conduction band (31) and the second side edge (1022) of the dielectric substrate (102) is a first output end.
5. The equilateral triangular patch-based high-performance balanced band-pass filter according to claim 1, wherein the second output port feed line (4) includes a second output 50-ohm microstrip line conduction band (41) and a fourth impedance match line (42), one end of the second output 50-ohm microstrip line conduction band (41) extends to the second side (1022) of the dielectric substrate (102), the other end is connected with one end of the fourth impedance match line (42), and the other end of the fourth impedance match line (42) is connected to the fifth triangular patch (9); the joint of the conduction band (41) of the second output 50 ohm microstrip line and the second side edge (1022) of the dielectric substrate (102) is a second output end.
6. The equilateral triangular patch-based high-performance balanced band-pass filter according to claim 5, wherein the third slot line (71) and the sixth slot line (101) are located on a central axis AA ' of the dielectric substrate (102), the first triangular patch (5) and the second triangular patch (6) are symmetric with respect to the central axis AA ' of the dielectric substrate (102), and the fourth triangular patch (8) and the fifth triangular patch (9) are symmetric with respect to the central axis AA ' of the dielectric substrate (102).
7. The equilateral triangular patch-based high-performance balanced bandpass filter according to claim 1, wherein the end of the first input port feeder (1) connected to the first triangular patch (5) is close to the first vertex V of the first triangular patch (5)1And is located on the side perpendicular to the first slot line (51); the first vertex V1The vertex opposite to the edge where the first triangular patch (5) and the third triangular patch (7) are coupled; the joint of the first input port feeder (1) and the first triangular patch (5) is close to the vertex V1One side and the first vertex V1Is L from each otherP1The oblique width of the joint of the first input port feeder line (1) and the first triangular patch (5) is LP2The first triangular patch: (5) Has a side length of LP1+LP2+LP3；
The second input port feed line (2) and the first input port feed line (1) are symmetrical about a central axis AA' of the dielectric substrate (102).
8. The equilateral triangular patch-based high-performance balanced bandpass filter according to claim 7, wherein the end of the first output port feeder (3) connected to the fourth triangular patch (8) is close to the second vertex V of the fourth triangular patch (8)2And is positioned on the side perpendicular to the fourth slot line (81); the second vertex V2The vertex of the side where the fourth triangular patch (8) and the sixth triangular patch (10) are coupled at edges is far away from the notch of the fourth slot line (81); one side of the joint of the first output port feeder line (3) and the fourth triangular patch (8) and a second vertex V2Is L from each otherP4The distance between the two sides of the joint of the first output port feeder line (3) and the fourth triangular patch (8) is LP5The side length of the fourth triangular patch (8) is LP4+LP5+LP6And L isP1+LP2+LP3＝LP4+LP5+LP6；
The second output port feed line (4) and the first output port feed line (3) are symmetrical with respect to a central axis AA' of the dielectric substrate (102).
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