CN110061333B - Microwave electrically tunable band-stop filter with high suppression degree and wide tuning range - Google Patents

Microwave electrically tunable band-stop filter with high suppression degree and wide tuning range Download PDF

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CN110061333B
CN110061333B CN201910269462.6A CN201910269462A CN110061333B CN 110061333 B CN110061333 B CN 110061333B CN 201910269462 A CN201910269462 A CN 201910269462A CN 110061333 B CN110061333 B CN 110061333B
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microstrip line
stop filter
tunable band
tuning range
wide
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CN110061333A (en
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杨涛
李群
陈雄
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/207—Hollow waveguide filters
    • H01P1/208—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
    • H01P1/2082—Cascaded cavities; Cascaded resonators inside a hollow waveguide structure with multimode resonators

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Abstract

The invention discloses a microwave electrically tunable band-stop filter with high suppression degree and wide tuning range, which realizes band-stop filtering response of high suppression degree by the distributed coupling of a plurality of resonance units through a first microstrip line. Meanwhile, in each resonant unit, the cathode of the varactor diode D1 and the cathode of the varactor diode D2 are connected with each other through a third microstrip line to form a pair of varactor diodes connected in series in an opposite direction, and a direct current bias circuit is added to the cathode of the varactor diode D1 and the cathode of the varactor diode D2, so that the capacitance values of the varactor diodes D1 and D2 can be adjusted by changing the direct current bias voltage, and the stop band frequency response is adjusted. In addition, the tail end of each resonance unit is grounded through two metallized through holes, so that the grounding inductance can be effectively reduced, and the high suppression degree and the wide tuning range of the microwave tunable band-stop filter can be realized.

Description

Microwave electrically tunable band-stop filter with high suppression degree and wide tuning range
Technical Field
The invention relates to a microwave device technology, in particular to a microwave electrically tunable band-stop filter with high suppression degree and wide tuning range.
Background
The microwave electrically-tunable band-stop filter is an important tunable microwave component, and the capacitance value of the varactor is adjusted by changing the voltage of direct current bias, so that the center frequency of a stop band and the like are adjusted. Modern radar, wireless communication systems and the like need to work on different frequencies, and in order to improve the integration level of the system, a reconfigurable radio frequency front end needs to be adopted. The microwave electrically-tunable band-stop filter is an important component of a reconfigurable radio frequency front end and is used for inhibiting interference signals in a system. In practical application, the microwave tunable band-stop filter is required to have a high suppression degree and a wide tuning range, so that the system performance is improved and the application requirement of a broadband system is met. At present, the existing microwave electrically tunable band-stop filter has the problems of low suppression degree, narrow tuning range and the like.
In the prior art, a microwave electrically tunable band-stop filter adopts a multilayer structure of microstrip lines and a substrate integrated waveguide resonator, so that the adjustable range of the stop band center frequency of 2.8 to 3.4GHz is realized, the adjustable relative bandwidth is 19.4%, the stop band rejection degree fluctuates greatly along with the frequency, and the rejection degree at 2.8GHz is 25 dB. The microwave electrically tunable band-stop filter has a complex structure and a narrow tuning range.
Disclosure of Invention
The invention mainly aims to provide a microwave electrically tunable band-stop filter with high rejection degree and wide tuning range, so as to solve the problems of low rejection degree and narrow tuning range of the microwave electrically tunable band-stop filter in the prior art.
The invention is realized by the following technical scheme:
a microwave electrically tunable band-stop filter with high suppression degree and wide tuning range comprises a substrate, an input port, an output port, a first microstrip line and a plurality of resonance units, wherein the input port, the output port, the first microstrip line and the plurality of resonance units are arranged on the substrate;
one end of the first microstrip line is directly connected with the input port, the other end of the first microstrip line is directly connected with the output port, and the resonance unit is coupled with the first microstrip line;
the resonance unit comprises a second microstrip line, a resistor R1, a resistor R2, a variable capacitance diode D1, a variable capacitance diode D2 and a direct current bias circuit, the second microstrip line is coupled with the first microstrip line, one end of the second microstrip line is connected with one end of the resistor R1, the other end of the second microstrip line is connected with the anode of the variable capacitance diode D2, the cathode of the variable capacitance diode D1 and the cathode of the variable capacitance diode D2 are connected with each other through a third microstrip line and are connected with the direct current bias circuit through the resistor R2, and the other end of the resistor R1 and the anode of the variable capacitance diode D1 are grounded through metalized through a plated through hole.
Furthermore, the number of the resonance units is even, and every two resonance units are set as a group, so that the two resonance units in each group are symmetrically arranged relative to the central axis of the first microstrip line.
Further, the characteristic impedances of the first microstrip line, the input port and the output port are the same.
Further, the characteristic impedance is 50 Ω.
Further, the substrate is a Rogers RT/Duroid 5880 substrate with a thickness of 0.508mm and a relative effective dielectric constant of 2.2.
Further, the models of the varactor diode D1 and the varactor diode D2 are MA46H 201.
Further, the second microstrip line is 7.5mm long and 0.8mm wide.
Further, the coupling distance between the second microstrip line and the first microstrip line is 0.1 mm.
Further, the third microstrip line is 2mm long and 1.5mm wide.
Further, the anode of varactor D1 is grounded through two metalized vias.
Compared with the prior art, the microwave electrically tunable band-stop filter with high rejection degree and wide tuning range provided by the invention realizes the band-stop filtering response with high rejection degree by the distributed coupling of the first microstrip line and the plurality of resonance units. Meanwhile, in each resonant unit, the cathode of the varactor diode D1 and the cathode of the varactor diode D2 are connected with each other through a third microstrip line to form a pair of varactor diodes connected in series in an opposite direction, and a direct current bias circuit is added to the cathode of the varactor diode D1 and the cathode of the varactor diode D2, so that the capacitance values of the varactor diodes D1 and D2 can be adjusted by changing the direct current bias voltage, and the stop band frequency response is adjusted. In addition, the tail end of each resonance unit is grounded through the metalized through hole, so that the grounding inductance can be effectively reduced, and the high suppression degree and the wide tuning range of the microwave electrically tunable band-stop filter can be realized.
Drawings
Fig. 1 is a schematic diagram of an overall structure of a microwave electrically tunable band-stop filter with a high suppression degree and a wide tuning range according to an embodiment of the present invention;
FIG. 2 is a schematic size diagram of a microwave electrically tunable band-stop filter with a high suppression degree and a wide tuning range according to an embodiment of the present invention;
fig. 3 is a simulation diagram of S11 parameters of the microwave tunable band-stop filter with a high degree of suppression and a wide tuning range according to the embodiment of the present invention;
fig. 4 is a simulation diagram of S21 parameters of the microwave tunable band-stop filter with a high degree of suppression and a wide tuning range according to the embodiment of the present invention;
FIG. 5 is a test chart of the S11 parameter of the microwave tunable band-stop filter with high suppression degree and wide tuning range according to the embodiment of the present invention;
fig. 6 is a test chart of S21 parameters of the microwave tunable band-stop filter with high suppression degree and wide tuning range according to the embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the following embodiments and the accompanying drawings.
As shown in fig. 1, the microwave electrically tunable band-stop filter with a high suppression degree and a wide tuning range according to the embodiment of the present invention includes a substrate (not shown in the drawings), an input port 1, an output port 2, a first microstrip line 3, and a plurality of resonance units 4, where the input port 1, the output port 2, the first microstrip line 3, and the plurality of resonance units 4 are mounted on the substrate.
One end of the first microstrip line 3 is directly connected with the input port 1, the other end of the first microstrip line 3 is directly connected with the output port 2, and the resonance unit 4 is coupled with the first microstrip line 3.
The resonance unit 4 comprises a second microstrip line 5, a resistor R1, a resistor R2, a varactor D1, a varactor D2 and a direct current bias circuit 7, the second microstrip line 5 is coupled with the first microstrip line 3, one end of the second microstrip line 5 is connected with one end of the resistor R1, the other end of the second microstrip line 5 is connected with an anode of the varactor D2, a cathode of the varactor D1 and a cathode of the varactor D2 are connected with each other through a third microstrip line 6 and are connected with the direct current bias circuit 7 through the resistor R2, and the other end of the resistor R1 and the anode of the varactor D1 are grounded through metalized through a plated-hole.
The number of the resonant units 4 is even, and every two resonant units are set as a group, so that the two resonant units 4 in each group are symmetrically arranged relative to the central axis of the first microstrip line 3. Specifically, in the present embodiment, there are 18 resonant units 4, each two of which are set as a group, and there are 9 groups, and the two resonant units 4 in each group are both symmetrically arranged with respect to the central axis of the first microstrip line 3 (i.e., the central dashed line of the first microstrip line 3 in fig. 1).
The characteristic impedances of the first microstrip line 3, the input port 1 and the output port 2 are the same, and are all 50 Ω. The width w3 of the first microstrip line 3 is 1.54 mm.
In this example, the substrate is a Rogers RT/Duroid 5880 substrate with a thickness of 0.508mm and a relative effective dielectric constant of 2.2. Varactor diode D1 and varactor diode D2 are both MA46H 201. This model diode is available from MACOM corporation.
In this embodiment, the length l1 of the second microstrip line 5 is 7.5mm, and the width w1 is 0.8 mm. The coupling distance d1 between the second microstrip line 5 and the first microstrip line 3 is 0.1 mm. The third microstrip line has a length l2 of 2mm and a width w2 of 1.5 mm.
The positive pole of varactor D1 can be through two metallized via hole ground connection, can reduce the inductance of ground connection through two metallized via hole ground connections, is favorable to realizing the high degree of suppression and the wide tuning range of microwave electric regulation band elimination filter.
FIG. 3 shows the S of the tunable microwave band-stop filter of the present embodiment11And (5) parameter simulation graphs. FIG. 4 shows the S of the tunable microwave band-stop filter of the present embodiment21And (5) parameter simulation graphs. As can be seen from the figure, when the capacitance values of the varactors D1 and D2 are 5pF, the center frequency of the stop band is 3.95GHz, and when the capacitance values of the varactors D1 and D2 are 0.22pF, the center frequency of the stop band is 9 GHz. Therefore, the simulated frequency tuning range is 3.95-9GHz, the relative adjustable bandwidth is 78%, and the stop band rejection degree is more than 50 dB.
FIG. 5 shows the S of the electrically tunable microwave band-stop filter of the present embodiment11And (5) parameter test charts. FIG. 6 shows S of the tunable microwave band-stop filter of the present embodiment21And (5) parameter test charts. As can be seen from the figure, when the dc bias voltage is 0V, the center frequency of the stop band is 3.8GHz, and when the dc bias voltage is 25V, the center frequency of the stop band is 9 GHz. Therefore, the tested frequency tuning range is 3.8-9GHz, the relative adjustable bandwidth is 81%, and the rejection of the stop band is more than 40 dB.
The above-described embodiments are merely preferred embodiments, which are not intended to limit the scope of the present invention, and any modifications, equivalents, improvements, etc. made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (10)

1. A microwave electrically tunable band-stop filter with high suppression degree and wide tuning range is characterized by comprising a substrate, an input port, an output port, a first microstrip line and a plurality of resonance units, wherein the input port, the output port, the first microstrip line and an even number of resonance units are arranged on the substrate;
one end of the first microstrip line is directly connected with the input port, the other end of the first microstrip line is directly connected with the output port, and the resonance unit is coupled with the first microstrip line;
the resonance unit comprises a second microstrip line, a resistor R1, a resistor R2, a variable capacitance diode D1, a variable capacitance diode D2 and a direct current bias circuit, the second microstrip line is coupled with the first microstrip line, one end of the second microstrip line is connected with one end of the resistor R1, the other end of the second microstrip line is connected with the anode of the variable capacitance diode D2, the cathode of the variable capacitance diode D1 and the cathode of the variable capacitance diode D2 are connected with each other through a third microstrip line, the third microstrip line is connected with the direct current bias circuit through the resistor R2, and the other end of the resistor R1 and the anode of the variable capacitance diode D1 are grounded through metalized via holes.
2. The high-suppression and wide-tuning-range microwave electrically tunable band-stop filter according to claim 1, wherein the number of the resonance units is even, and two of the resonance units are set as a group, and then two resonance units of each group are symmetrically arranged with respect to a central axis of the first microstrip line.
3. The high-rejection and wide-tuning-range microwave tunable band-stop filter according to claim 1, wherein characteristic impedances of the first microstrip line, the input port and the output port are the same.
4. The high rejection and wide tuning range microwave tunable band stop filter of claim 3, wherein said characteristic impedance is 50 Ω.
5. The high rejection and wide tuning range microwave tunable band reject filter of claim 1, wherein said substrate is a Rogers RT/Duroid 5880 substrate having a thickness of 0.508mm and a relative effective dielectric constant of 2.2.
6. The high rejection and wide tuning range microwave tunable band stop filter of claim 1, wherein said varactor diode D1 and varactor diode D2 are of the type MA46H 201.
7. The high rejection and wide tuning range microwave tunable band stop filter of claim 1, wherein said second microstrip line has a length of 7.5mm and a width of 0.8 mm.
8. The high-suppression and wide-tuning-range microwave electrically tunable band-stop filter according to claim 7, wherein a coupling pitch of the second microstrip line and the first microstrip line is 0.1 mm.
9. The high rejection and wide tuning range microwave tunable band stop filter of claim 8, wherein said third microstrip line has a length of 2mm and a width of 1.5 mm.
10. The high rejection and wide tuning range microwave tunable band stop filter of claim 1, wherein the anode of varactor D1 is grounded through two metalized vias.
CN201910269462.6A 2019-04-04 2019-04-04 Microwave electrically tunable band-stop filter with high suppression degree and wide tuning range Active CN110061333B (en)

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Publication number Priority date Publication date Assignee Title
CN110911786B (en) * 2019-11-28 2021-06-15 电子科技大学 Reconfigurable high-rejection dual-band-stop filter
CN113037240B (en) * 2021-03-08 2022-06-24 电子科技大学 Wide adjustable range band elimination filter device with continuous frequency adjustable characteristic
CN113488749B (en) * 2021-05-19 2023-01-17 电子科技大学 2-18GHz frequency band center frequency continuously adjustable broadband band-stop filter

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CN205723885U (en) * 2016-06-13 2016-11-23 华南理工大学 The plane tunable band-pass band elimination filter that a kind of bandwidth is controlled
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CN205790296U (en) * 2016-01-28 2016-12-07 华南理工大学 A kind of tunable band-pass-band elimination filter loaded based on open circuit minor matters
CN206834309U (en) * 2017-05-08 2018-01-02 华南理工大学 A kind of adjustable bandpass and band-rejection filter of planer dual-frequency
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