CN111416182A - High-selectivity three-passband power division filter - Google Patents
High-selectivity three-passband power division filter Download PDFInfo
- Publication number
- CN111416182A CN111416182A CN202010193920.5A CN202010193920A CN111416182A CN 111416182 A CN111416182 A CN 111416182A CN 202010193920 A CN202010193920 A CN 202010193920A CN 111416182 A CN111416182 A CN 111416182A
- Authority
- CN
- China
- Prior art keywords
- microstrip line
- coupling microstrip
- section
- strip
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/2039—Galvanic coupling between Input/Output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/20309—Strip line filters with dielectric resonator
Abstract
The invention discloses a high-selectivity three-passband power division filter which comprises a rectangular dielectric substrate, wherein a metal ground plate is arranged on the lower surface of the rectangular dielectric substrate, an input port feeder line, a first output port feeder line and a second output port feeder line are arranged on the upper surface of the rectangular dielectric substrate, a first coupling microstrip line strip is arranged between the first output port feeder line and the input port feeder line, and a second coupling microstrip line strip is arranged between the second output port feeder line and the input port feeder line. The first coupling microstrip line strip is connected with the first one-half wavelength open line and the third coupling microstrip line strip; the second coupling microstrip line strip is connected with the second half-wavelength open circuit line and the fourth coupling microstrip line strip; the fifth coupling microstrip line strip is in short circuit with the metal ground plate and is connected with the front end of the first terminal open-circuit stub, and the sixth coupling microstrip line strip is in short circuit with the metal ground plate and is connected with the front end of the second terminal open-circuit stub. The high-selectivity three-passband power division filter disclosed by the invention has the advantages of compact structure, low loss, high selectivity, good isolation degree and good out-of-band rejection performance.
Description
Technical Field
The invention relates to the field of microwave passive devices, in particular to a high-selectivity three-passband power division filter.
Background
In recent years, with the development of Modular Building Blocks (MBBs) and Monolithic Microwave Integrated Circuits (MMICs), low cost, high integration, and miniaturization have become very important considerations in the Integrated design of modern wireless communication systems. Generally, the rf front-end circuit is composed of different devices, such as filters, power dividers, etc., and designing these devices separately increases the physical size of the front-end circuit, so that designing devices having both power dividing and filtering characteristics becomes the most effective way to reduce the circuit size. The power division filter is a passive element with integrated functions, and has received extensive attention from academic researchers.
Document 1[ c.f. chen, t.y.huang, t.m. shen and r.b.wu, "Design of miniaturized filtering Power diodes for System-in-a-Package," IEEE Transactions on components, Packaging and Manufacturing Technology, vol.3, No.10, pp.1663-1672, oct.2013] implements a wilkinson Power divider with chebyshev and quasi-elliptical band-pass responses by using a mesh resonator, but, in order to improve the in-band isolation characteristic of the high-order response, the Power divider filter requires multiple layers of isolation resistors to implement, increasing the difficulty of implementing the cross-coupled topology.
Document 2[ w.m. chau, k.w.hsu and w.h.tu, "Filter-Based Wilkinson power divider," IEEE Microwave and Wireless Components L meters, vol.24, No.4, pp.239-241, April201] proposes a power division Filter with wide stopband performance by integrating a band pass Filter and two low pass filters with a Wilkinson power divider, however, its large insertion loss and poor selectivity limit the wide application of the power division Filter.
Document 3[ s.s.gao, s.sun and s.xiao, "a Novel wide band With Harmonic-Suppressed Ring Resonator," IEEE Microwave and wireless components L meters, vol.23, No.3, pp.119-121, March 2013] designs a three-way power splitting filter With high selectivity by using a Ring Resonator, but its isolation level in the band is not good enough.
Disclosure of Invention
The invention provides a high-selectivity three-passband power division filter, which aims to solve the problems of high implementation difficulty, high insertion loss, poor selectivity and poor isolation level of the conventional power division filter.
The embodiment of the invention provides a high-selectivity three-passband power division filter, which comprises a rectangular dielectric substrate, wherein a metal ground plate is arranged on the lower surface of the rectangular dielectric substrate, an input port feeder, a first output port feeder and a second output port feeder are arranged on the upper surface of the rectangular dielectric substrate, the rear section of the input port feeder is in short circuit with the metal ground plate through a first metalized through hole, the first output port feeder and the second output port feeder respectively extend from two parallel short sides of the rectangular dielectric substrate to the central axis of the rectangular dielectric substrate, a first coupling microstrip strip is arranged between the first output port feeder and the input port feeder, and a second coupling microstrip strip is arranged between the second output port feeder and the input port feeder;
the first coupling microstrip line strip and the second coupling microstrip line strip are close to and parallel to the rear section of the input port feeder line, and an isolation resistor is arranged between the first coupling microstrip line strip and the second coupling microstrip line strip;
the front end of the first coupling microstrip line strip is connected with a first one-half wavelength open circuit; the front end of the second coupling microstrip line strip is connected with a second half-wavelength open circuit;
the rear end of the first one-half wavelength open circuit is connected with a third coupling microstrip line strip, the rear section of the second one-half wavelength open circuit is connected with a fourth coupling microstrip line strip, a fifth coupling microstrip line strip and the third coupling microstrip line strip are placed close to and parallel to each other, the tail end of the fifth coupling microstrip line strip is in short circuit with a metal ground plate through a second metalized through hole and is connected with the front end of the first terminal open circuit branch, a sixth coupling microstrip line strip and the fourth coupling microstrip line strip are placed close to and parallel to each other, and the tail end of the sixth coupling microstrip line strip is in short circuit with the metal ground plate through a third metalized through hole and is connected with the front end of the second terminal open circuit branch.
Further, in one implementation: the high-selectivity three-passband power division filter is symmetrically arranged by taking a central axis of the rectangular dielectric substrate as a symmetry axis, and the central axis is a short axis of the PCB.
Further, in one implementation: the input port feeder comprises a first 50-ohm microstrip line conduction band and a terminal short-circuit main transmission line, the first 50-ohm microstrip line conduction band and the terminal short-circuit main transmission line are connected in series from front to back along the central axis of the rectangular dielectric substrate, the rear end of the terminal short-circuit main transmission line is in short circuit with the metal ground plate through a metalized through hole, one end where the first 50-ohm microstrip line conduction band is located is the front end of the input port feeder, one end where the terminal short-circuit main transmission line is located is the rear end of the input port feeder, and the front-to-back direction is the direction of the first 50-ohm microstrip line conduction band towards the terminal.
Further, in one implementation: the first output port feeder line comprises a second 50-ohm microstrip line conduction band and a first impedance matching line, the second 50-ohm microstrip line conduction band starts from a first short edge of the rectangular medium substrate and is orthogonal to the first short edge of the rectangular medium substrate, the front end of the first impedance matching line is connected with the second 50-ohm microstrip line conduction band, the rear end of the first impedance matching line is connected with the front end of the first coupling microstrip line, and an angle of 135 degrees is formed between the first impedance matching line and the first coupling microstrip line.
Further, in one implementation: the second output port feeder line comprises a third 50-ohm microstrip line conduction band and a second impedance matching line, the third 50-ohm microstrip line conduction band starts from a second short edge of the rectangular medium substrate and is orthogonal to the second short edge of the rectangular medium substrate, the second short edge is parallel to the first short edge, the front end of the second impedance matching line is connected with the third 50-ohm microstrip line conduction band, the rear end of the second impedance matching line is connected with the front end of the second coupling microstrip line, and an angle of 135 degrees is formed between the second impedance matching line and the second coupling microstrip line.
Further, in one implementation: the first coupling microstrip line strip and the second coupling microstrip line strip are close to and parallel to the rear half section of the terminal short-circuit main transmission line, and the lengths of the first coupling microstrip line strip and the second coupling microstrip line strip are equal to the length of the rear half section of the terminal short-circuit main transmission line.
Further, in one implementation: the first one-half wavelength open circuit is arranged on the outer side of the first coupling microstrip line strip, the first one-half wavelength open circuit comprises a first section and a second section which are connected in series, the first section is orthogonal to the central axis of the rectangular dielectric substrate, and the inner side of the first section is connected with the front end of the first coupling microstrip line strip; the front end of the second section is connected with the outer end of the first section, and the second section is close to and parallel to the first short side of the rectangular medium substrate; the second half-wavelength open circuit is arranged on the outer side of the second coupling microstrip line strip and comprises a third section and a fourth section which are connected in series, the third section is orthogonal to the central axis of the rectangular dielectric substrate, and the inner side of the third section is connected with the front end of the second coupling microstrip line strip; the front end of the fourth section is connected with the outer end of the third section, and the fourth section is close to and parallel to the second short side of the rectangular medium substrate.
Further, in one implementation: the third coupling microstrip line strip is connected with the rear end of the second section and is orthogonal to the second section, the fifth coupling microstrip line strip is close to and parallel to the third coupling microstrip line strip, the tail end of the fifth coupling microstrip line strip is in short circuit with the metal ground plate through a second metalized via hole and is connected with the front end of the first terminal open-circuit stub, the first terminal open-circuit stub is divided into two sections and comprises a fifth section and a sixth section, the fifth section is connected with the fifth coupling microstrip line strip and is orthogonal to the fifth section, and the sixth section is orthogonal to the fifth section; the fourth coupling microstrip line strip is connected with the rear end of the fourth section and is orthogonal to the fourth section, the sixth coupling microstrip line strip is close to and parallel to the fourth coupling microstrip line strip, the tail end of the sixth coupling microstrip line strip is in short circuit with the metal ground plate through a third metalized through hole and is connected with the front end of the second terminal open-circuit stub, the second terminal open-circuit stub is divided into two sections and comprises a seventh section and an eighth section, the seventh section is connected with the sixth coupling microstrip line strip and is orthogonal to the sixth section, and the eighth section is orthogonal to the seventh section.
Further, in one implementation:
the isolation resistor is bridged at the rear end of the first coupling microstrip line strip and the rear end of the second coupling microstrip line strip.
In the prior art, the power division filter has the problems of high implementation difficulty, high insertion loss, poor selectivity or poor isolation level. The high-selectivity three-passband power division filter is adopted, the integration of power distribution and frequency selection functions is realized by utilizing a three-wire coupling structure with a quarter-wavelength terminal short circuit, branch loading and an impedance matching principle are combined, a good port isolation characteristic is obtained by skillfully isolating a resistor between resonators, and the three-passband power division filter which is compact in structure, low in loss, high in selectivity, good in isolation degree and good in out-of-band inhibition performance is realized. Specifically, compared with the prior art, the invention has the following remarkable advantages:
(1) the invention has compact structure, can be realized on a single PCB, is convenient for processing and integration and has low production cost.
(2) The invention has high selectivity and broadband characteristics.
(3) The invention has good out-of-band rejection characteristics.
(4) The power division filter utilizes the indirect isolation resistor between the resonators, has good isolation and is suitable for modern wireless communication systems.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious to those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
Fig. 1 is a schematic perspective view of a high-selectivity three-passband power division filter according to an embodiment of the present invention;
fig. 2 is a schematic top view of a high-selectivity triple-passband power division filter according to an embodiment of the present invention;
fig. 3 is a schematic structural size diagram of a high-selectivity triple-passband power division filter according to an embodiment of the present invention;
fig. 4 is a schematic diagram illustrating simulation of S parameters of a high-selectivity three-passband power division filter according to an embodiment of the present invention;
fig. 5 is a schematic diagram illustrating simulation of matching characteristics and isolation characteristics S parameters of two output ports of a high-selectivity triple-passband power division filter according to an embodiment of the present invention.
Wherein, 1-rectangular dielectric substrate, 101-first short side, 102-second short side, 2-metal grounding plate, 3-input port feeder line, 301-first 50 ohm microstrip line conduction band, 302-terminal short-circuit main transmission line, 4-first output port feeder line, 401-second 50 ohm microstrip line conduction band, 402-first impedance match line, 5-second output port feeder line, 501-third 50 ohm microstrip line conduction band, 502-second impedance match line, 6-first metalized via hole, 7-first coupled microstrip line band, 8-second coupled microstrip line, 9-isolation resistor, 10-first one-half wavelength open line, 1001-first section, 1002-second section, 11-second one-half wavelength open line, 1101-a third section, 1102-a fourth section, 12-a third coupled microstrip line strip, 13-a fourth coupled microstrip line strip, 14-a fifth coupled microstrip line strip, 15-a second metalized via, 16-a first terminal open-circuit stub, 1601-a fifth section, 1602-a sixth section, 17-a sixth coupled microstrip line strip, 18-a third metalized via, 19-a second terminal open-circuit stub, 1901-a seventh section, 1902-an eighth section.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
The embodiment of the invention discloses a high-selectivity three-passband power division filter, which is a microwave passive device of a radio frequency front-end circuit, has high selectivity, small insertion loss and good out-of-band rejection performance, and is applied to a modern wireless communication system.
As shown in fig. 1 and fig. 2, the high-selectivity triple-passband power division filter according to this embodiment includes a rectangular dielectric substrate 1, a metal grounding plate 2 is arranged on the lower surface of the rectangular dielectric substrate 1, an input port feeder 3, a first output port feeder 4 and a second output port feeder 5 are arranged on the upper surface of the rectangular dielectric substrate 1, the rear section of the input port feed line 3 is shorted to the metal ground plate 2 through a first metallized via 6, the first output port feeder line 4 and the second output port feeder line 5 extend from two parallel short sides of the rectangular dielectric substrate 1 to the central axis of the rectangular dielectric substrate 1, a first coupling microstrip strip 7 is provided between the first output port feed 4 and the input port feed 3, a second coupling microstrip line strip 8 is arranged between the second output port feeder 5 and the input port feeder 3;
the first coupling microstrip line strip 7 and the second coupling microstrip line strip 8 are close to and parallel to the rear section of the input port feeder line 3, and an isolation resistor 9 is arranged between the first coupling microstrip line strip 7 and the second coupling microstrip line strip 8;
the front end of the first coupling microstrip strip 7 is connected with a first one-half wavelength open circuit line 10; the front end of the second coupling microstrip line 8 is connected with a second half-wavelength open line 11;
the rear end of the first one-half wavelength open circuit line 10 is connected with a third coupling microstrip line strip 12, the rear section of the second one-half wavelength open circuit line 11 is connected with a fourth coupling microstrip line strip 13, a fifth coupling microstrip line strip 14 and the third coupling microstrip line strip 12 are placed close to and parallel to each other, the tail end of the fifth coupling microstrip line strip 14 is in short circuit with the metal ground plate 2 through a second metalized via hole 15 and is connected with the front end of a first terminal open circuit branch 16, a sixth coupling microstrip line strip 17 and the fourth coupling microstrip line strip 13 are placed close to and parallel to each other, and the tail end of the sixth coupling microstrip line strip 17 is in short circuit with the metal ground plate 2 through a third metalized via hole 18 and is connected with the front end of a second terminal open circuit branch 19.
In the high-selectivity three-passband power division filter described in this embodiment, the high-selectivity three-passband power division filter is symmetrically arranged with the central axis of the rectangular dielectric substrate 1 as a symmetric axis, and the central axis is the short axis of the PCB.
In the high-selectivity three-passband power division filter according to this embodiment, the input port feeder 3 includes a first 50-ohm microstrip line conduction band 301 and a terminal short-circuit main transmission line 302, the first 50-ohm microstrip line conduction band 301 and the terminal short-circuit main transmission line 302 are connected in series from front to back along a central axis of the rectangular dielectric substrate 1, a rear end of the terminal short-circuit main transmission line 302 is short-circuited with the metal ground plate 2 through the metalized via hole 6, an end where the first 50-ohm microstrip line conduction band 301 is located is a front end of the input port feeder 3, an end where the terminal short-circuit main transmission line 302 is located is a rear end of the input port feeder 3, and a front-to-rear direction is a direction from the first 50-ohm microstrip line conduction band 301 to the terminal.
In the high-selectivity three-passband power division filter according to this embodiment, the first output port feeder 4 includes a second 50 ohm microstrip line conduction band 401 and a first impedance match line 402, the second 50 ohm microstrip line conduction band 401 starts from the first short side 101 of the rectangular dielectric substrate 1 and is orthogonal to the first short side 101, the front end of the first impedance match line 402 is connected to the second 50 ohm microstrip line conduction band 401, the rear end of the first impedance match line 402 is connected to the front end of the first coupling microstrip line strip 7, and an angle of 135 ° is formed between the first impedance match line 402 and the first coupling microstrip line strip 7.
In the high-selectivity three-passband power division filter according to this embodiment, the second output port feeder 5 includes a third 50 ohm microstrip conduction band 501 and a second impedance match line 502, the third 50 ohm microstrip conduction band 501 starts from the second short side 102 of the rectangular dielectric substrate 1 and is orthogonal to the second short side 102 of the rectangular dielectric substrate 1, the second short side 102 is parallel to the first short side 101, the front end of the second impedance match line 502 is connected to the third 50 ohm microstrip conduction band 501, the rear end of the second impedance match line 502 is connected to the front end of the second coupling microstrip line 8, and an angle of 135 ° is formed between the second impedance match line 502 and the second coupling microstrip line 8.
In the high-selectivity three-passband power division filter according to this embodiment, the first coupling microstrip 7 and the second coupling microstrip 8 are close to and parallel to the second half section of the terminal short-circuit main transmission line 302, and the lengths of the first coupling microstrip 7 and the second coupling microstrip 8 are equal.
In the high-selectivity three-passband power division filter according to this embodiment, the first one-half wavelength open circuit line 10 is disposed outside the first coupling microstrip strip 7, the first one-half wavelength open circuit line 10 includes a first section 1001 and a second section 1002 that are connected in series, the first section 1001 is orthogonal to the central axis of the rectangular dielectric substrate 1, and the inside of the first section 1001 is connected to the front end of the first coupling microstrip strip 7; the front end of the second section 1002 is connected with the outer end of the first section 1001, and the second section 1002 is close to and parallel to the first short side 101;
the second half-wavelength open circuit line 11 is arranged on the outer side of the second coupling microstrip line strip 8 and comprises a third section 1101 and a fourth section 1102 which are connected in series, the third section 1101 is orthogonal to the central axis of the rectangular dielectric substrate 1, and the inner side of the third section 1101 is connected with the front end of the second coupling microstrip line strip 8; the front end of the fourth segment 1102 is connected to the outer end of the third segment 1101, and the fourth segment 1102 is close to and parallel to the second short side 102.
In the high-selectivity three-passband power division filter according to this embodiment, the third coupling microstrip line 12 is connected to the rear end of the second segment 1002 and is orthogonal to the second segment 1002, the fifth coupling microstrip line 14 is close to and parallel to the third coupling microstrip line 12, and the end of the fifth coupling microstrip line 14 is short-circuited with the metal ground plate 2 through the second metalized via 15 and is connected to the front end of the first open-circuit stub 16;
the first open-ended branch 16 is divided into two sections, including a fifth section 1601 and a sixth section 1602, where the fifth section 1601 is connected to and orthogonal to the fifth coupling microstrip line 14, and the sixth section 1602 is orthogonal to the fifth section 1601; the fourth coupling microstrip line strip 13 is connected to the rear end of the fourth segment 1102 and is orthogonal to the fourth segment 1102, the sixth coupling microstrip line strip 17 is close to and parallel to the fourth coupling microstrip line strip 13, the end of the sixth coupling microstrip line strip 17 is short-circuited with the metal ground plate 2 through a third metalized via hole 18 and is connected to the front end of the second open-circuit terminal stub 19, the second open-circuit terminal stub 19 is divided into two segments including a seventh segment 1901 and an eighth segment 1902, the seventh segment 1901 is connected to and orthogonal to the sixth coupling microstrip line strip 17, and the eighth segment 1902 is orthogonal to the seventh segment 1901.
In the high-selectivity three-passband power division filter described in this embodiment, the isolation resistor 9 is bridged between the rear end of the first coupling microstrip strip 7 and the rear end of the second coupling microstrip strip 8.
In the high-selectivity three-passband power division filter according to the embodiment of the present invention, the lengths of the first coupling microstrip line 7 and the second coupling microstrip line 8 determine the position of the passband, and the width, the distance from the input port feeder line, and the width of the main transmission line determine the coupling strength; the lengths of the first half-wavelength open line 10 and the second half-wavelength open line 11 determine the positions of two zero points outside two pass bands, and the longer the length, the lower the zero point frequency, and the width influence the port matching characteristics in the two pass bands; the lengths of the third coupling microstrip line strip 12, the fourth coupling microstrip line strip 13, the fifth coupling microstrip line strip 14, the sixth coupling microstrip line strip 17, the first terminal open-circuit branch 16 and the second terminal open-circuit branch 19 determine the positions of zero points among the three pass bands, and the longer the length is, the lower the zero point frequency is, and the lower the width influences the port matching characteristics in the two pass bands; the isolation resistor 9 influences isolation between the output ports and port matching characteristics, and the optimal isolation degree and port matching can be obtained by adjusting the resistance value of the isolation resistor.
The invention processes and corrodes the metal surfaces of the front surface and the back surface of the circuit substrate in the manufacturing process of the printed circuit board, thereby forming the required metal pattern, having simple structure, being realized on a single PCB board, being convenient for processing and integrating and having low production cost. Meanwhile, a three-wire coupling structure with a quarter-wavelength terminal short circuit is utilized, branch loading and an impedance matching principle are combined, good power distribution characteristics and good filtering characteristics are obtained, and good port isolation characteristics are obtained by skillfully isolating resistors between resonators. The three-passband power division filter has high selectivity, small insertion loss and good out-of-band rejection performance, and is suitable for modern wireless communication systems.
The present invention will be described in further detail with reference to examples.
The structure of a high-selectivity three-passband power division filter is shown in fig. 1, the top view is shown in fig. 2, and the relevant dimensions are shown in fig. 3. The rectangular dielectric substrate 1 used had a relative dielectric constant of 3.55, a thickness of 0.508mm and a loss tangent of 0.0027. With reference to fig. 3, the parameters of the power division filter are as follows: wk1＝Wk2＝1.18mm，W1＝0.5mm，W2＝0.1mm，W3＝1.3mm，W4＝2mm，W5＝0.4mm，W6＝1mm，Lk1＝Lk2＝5mm，L1＝13.28mm，L2＝16mm，L31＝9.46mm，L32＝9.46mm，L41＝17mm，L42＝5.5mm，L51＝11.6mm，L52＝12.4mm，L61＝5mm，L62＝6mm，g1＝g20.1mm, 820 omega, the total area of the power division filter excluding the 50 ohm microstrip line conduction band is 38.9 × 29.3.3 mm2The corresponding guided wavelength dimension is 0.58 lambdag × 0.43.43 lambdag, where lambdag is the guided wavelength corresponding to the first passband center frequency.
The power division filter of the embodiment is modeled and simulated in electromagnetic simulation software HFSS.13.0. Fig. 4 is a simulation diagram of the S parameter of the power division filter in this example, and it can be seen from the diagram that the center frequencies of the three pass bands of the power division filter are 2.38GHz, 3.42GHz and 3.91GHz, the relative bandwidths are 30%, 13.7% and 12.3%, respectively, the return loss in the pass band is lower than 18dB, and the minimum insertion loss of the three pass bands is 0.17dB, 0.33dB and 0.4dB, respectively. The presence of four transmission zeros allows the example power division filter to have good frequency selectivity and harmonic rejection.
Fig. 5 is a simulation diagram of S parameters of matching characteristics and isolation characteristics of two power output ports of the power division filter in this example, and it can be seen from the diagram that return loss of output ports in a passband of the power division filter described in this embodiment is lower than 18dB, and isolation is better than 2 dB.
In summary, the high-selectivity three-passband power division filter provided by the invention realizes the integration of power distribution and frequency selection functions by utilizing a three-wire coupling structure with a quarter-wavelength terminal short circuit, combining branch loading and an impedance matching principle, obtains good port isolation characteristics by skillfully isolating resistors among resonators, realizes a three-passband power division filter with compact structure, low loss, high selectivity, good isolation and better out-of-band inhibition performance, and is very suitable for modern wireless communication systems.
Claims (9)
1. A high-selectivity three-passband power division filter is characterized in that: comprises a rectangular dielectric substrate (1), a metal grounding plate (2) is arranged on the lower surface of the rectangular dielectric substrate (1), an input port feeder (3), a first output port feeder (4) and a second output port feeder (5) are arranged on the upper surface of the rectangular dielectric substrate (1), the rear section of the input port feeder line (3) is in short circuit with the metal grounding plate (2) through a first metalized through hole (6), the first output port feeder line (4) and the second output port feeder line (5) extend from two parallel short sides of the rectangular dielectric substrate (1) to the central axis of the rectangular dielectric substrate (1) respectively, a first coupling microstrip line strip (7) is arranged between the first output port feeder line (4) and the input port feeder line (3), a second coupling microstrip line strip (8) is arranged between the second output port feeder line (5) and the input port feeder line (3);
the first coupling microstrip line strip (7) and the second coupling microstrip line strip (8) are close to and parallel to the rear section of the input port feeder line (3), and an isolation resistor (9) is arranged between the first coupling microstrip line strip (7) and the second coupling microstrip line strip (8);
the front end of the first coupling microstrip line (7) is connected with a first one-half wavelength open circuit (10); the front end of the second coupling microstrip line strip (8) is connected with a second half-wavelength open circuit line (11);
the rear end of the first one-half wavelength open circuit line (10) is connected with a third coupling microstrip line strip (12), the rear section of the second one-half wavelength open circuit line (11) is connected with a fourth coupling microstrip line strip (13), a fifth coupling microstrip line strip (14) and the third coupling microstrip line strip (12) are placed close to and parallel to each other, the tail end of the fifth coupling microstrip line strip (14) is in short circuit with the metal ground plate (2) through a second metalized through hole (15) and is connected with the front end of the first terminal open circuit branch (16), a sixth coupling microstrip line strip (17) and the fourth coupling microstrip line strip (13) are placed close to and parallel to each other, and the tail end of the sixth coupling microstrip line strip (17) is in short circuit with the metal ground plate (2) through a third metalized through hole (18) and is connected with the front end of the second terminal open circuit branch (19).
2. The high selectivity three-passband power division filter according to claim 1, wherein:
the high-selectivity three-passband power division filter is symmetrically arranged by taking a central axis of the rectangular dielectric substrate (1) as a symmetry axis, and the central axis is a short axis of the PCB.
3. The high selectivity three-passband power division filter according to claim 1, wherein:
the input port feeder line (3) comprises a first 50-ohm microstrip line conduction band (301) and a terminal short-circuit main transmission line (302), the first 50-ohm microstrip line conduction band (301) and the terminal short-circuit main transmission line (302) are connected in series from front to back along the central axis of the rectangular dielectric substrate (1), the rear end of the terminal short-circuit main transmission line (302) is in short circuit with the metal grounding plate (2) through a metalized via hole (6), one end of the first 50-ohm microstrip line conduction band (301) is the front end of the input port feeder line (3), one end of the terminal short-circuit main transmission line (302) is the rear end of the input port feeder line (3), and the front-to-back direction is the direction from the first 50-ohm microstrip line conduction band (301) to the terminal short-circuit main transmission line (302).
4. The high selectivity three-passband power division filter according to claim 1, wherein:
the first output port feeder line (4) comprises a second 50-ohm microstrip line conduction band (401) and a first impedance matching line (402), the second 50-ohm microstrip line conduction band (401) starts from a first short edge (101) of the rectangular medium substrate (1) and is orthogonal to the first short edge (101), the front end of the first impedance matching line (402) is connected with the second 50-ohm microstrip line conduction band (401), the rear end of the first impedance matching line (402) is connected with the front end of the first coupling microstrip line strip (7), and an angle of 135 degrees is formed between the first impedance matching line (402) and the first coupling microstrip line strip (7).
5. The high selectivity three-passband power division filter according to claim 1, wherein:
the second output port feeder line (5) comprises a third 50-ohm microstrip line conduction band (501) and a second impedance matching line (502), the third 50-ohm microstrip line conduction band (501) starts from a second short side (102) of the rectangular medium substrate (1) and is orthogonal to the second short side (102) of the rectangular medium substrate (1), the second short side (102) is parallel to the first short side (101), the front end of the second impedance matching line (502) is connected with the third 50-ohm microstrip line conduction band (501), the rear end of the second impedance matching line (502) is connected with the front end of the second coupling microstrip line strip (8), and an angle of 135 degrees is formed between the second impedance matching line (502) and the second coupling microstrip line strip (8).
6. The high selectivity three-passband power division filter according to claim 1, wherein:
the first coupling microstrip line strip (7) and the second coupling microstrip line strip (8) are close to and parallel to the rear half section of the terminal short circuit main transmission line (302), and the lengths of the first coupling microstrip line strip (7) and the second coupling microstrip line strip (8) are equal.
7. The high selectivity three-passband power division filter according to claim 1, wherein:
the first one-half wavelength open line (10) is arranged on the outer side of the first coupling microstrip line (7), the first one-half wavelength open line (10) comprises a first section (1001) and a second section (1002) which are connected in series, the first section (1001) is orthogonal to the central axis of the rectangular dielectric substrate (1), and the inner side of the first section (1001) is connected with the front end of the first coupling microstrip line (7); the front end of the second section (1002) is connected with the outer end of the first section (1001), and the second section (1002) is close to and parallel to the first short side (101);
the second half-wavelength open circuit line (11) is arranged on the outer side of the second coupling microstrip line strip (8) and comprises a third section (1101) and a fourth section (1102) which are connected in series, the third section (1101) is orthogonal to the central axis of the rectangular dielectric substrate (1), and the inner side of the third section (1101) is connected with the front end of the second coupling microstrip line strip (8); the front end of the fourth segment (1102) is connected with the outer end of the third segment (1101), and the fourth segment (1102) is close to and parallel to the second short side (102).
8. The high selectivity three-passband power division filter according to claim 1, wherein:
the third coupling microstrip line strip (12) is connected with the rear end of the second section (1002) and is orthogonal to the second section (1002), the fifth coupling microstrip line strip (14) and the third coupling microstrip line strip (12) are close to and parallel, and the tail end of the fifth coupling microstrip line strip (14) is in short circuit with the metal ground plate (2) through a second metalized through hole (15) and is connected with the front end of the first terminal open-circuit branch (16);
the first terminal open-circuit branch (16) is divided into two sections, and comprises a fifth section (1601) and a sixth section (1602), wherein the fifth section (1601) is connected with a fifth coupling microstrip line strip (14) and is orthogonal to the fifth section, and the sixth section (1602) is orthogonal to the fifth section (1601); the fourth coupling microstrip line strip (13) is connected with the rear end of the fourth section (1102) and is orthogonal to the fourth section (1102), the sixth coupling microstrip line strip (17) is close to and parallel to the fourth coupling microstrip line strip (13), the tail end of the sixth coupling microstrip line strip (17) is in short circuit with the metal ground plate (2) through a third metalized via hole (18) and is connected with the front end of the second terminal open-circuit branch (19), the second terminal open-circuit branch (19) is divided into two sections including a seventh section (1901) and an eighth section (1902), the seventh section (1901) is connected with the sixth coupling microstrip line strip (17) and is orthogonal to the sixth section (1902), and the eighth section (1902) is orthogonal to the seventh section (1901).
9. The high selectivity three-passband power division filter according to claim 1, wherein:
the isolation resistor (9) is bridged at the rear end of the first coupling microstrip line strip (7) and the rear end of the second coupling microstrip line strip (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010193920.5A CN111416182B (en) | 2020-03-19 | 2020-03-19 | High-selectivity three-passband power division filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010193920.5A CN111416182B (en) | 2020-03-19 | 2020-03-19 | High-selectivity three-passband power division filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111416182A true CN111416182A (en) | 2020-07-14 |
| CN111416182B CN111416182B (en) | 2021-07-30 |
Family
ID=71493114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010193920.5A Active CN111416182B (en) | 2020-03-19 | 2020-03-19 | High-selectivity three-passband power division filter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111416182B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112290184A (en) * | 2020-09-30 | 2021-01-29 | 中国航空工业集团公司雷华电子技术研究所 | Broadband power combiner with filtering characteristic |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070001787A1 (en) * | 2005-07-04 | 2007-01-04 | Hiroyuki Kayano | Filter circuit device and radio communication apparatus using the same |
| US20090160575A1 (en) * | 2007-12-21 | 2009-06-25 | Alexandre Dupuy | Power Combiners and Dividers Based on Composite Right and Left Handed Metamaterial Structures |
| CN105098303A (en) * | 2015-08-25 | 2015-11-25 | 华南理工大学 | Power divider with double-band filter function |
| CN106935948A (en) * | 2017-02-10 | 2017-07-07 | 深圳大学 | A kind of work(filter-divider |
| CN107275740A (en) * | 2017-05-31 | 2017-10-20 | 南京邮电大学 | It is a kind of that there is the dual-frequency power divider for transmitting null character |
| CN108417938A (en) * | 2018-04-26 | 2018-08-17 | 电子科技大学 | A kind of micro-strip model filters power splitter |
-
2020
- 2020-03-19 CN CN202010193920.5A patent/CN111416182B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070001787A1 (en) * | 2005-07-04 | 2007-01-04 | Hiroyuki Kayano | Filter circuit device and radio communication apparatus using the same |
| US20090160575A1 (en) * | 2007-12-21 | 2009-06-25 | Alexandre Dupuy | Power Combiners and Dividers Based on Composite Right and Left Handed Metamaterial Structures |
| CN105098303A (en) * | 2015-08-25 | 2015-11-25 | 华南理工大学 | Power divider with double-band filter function |
| CN106935948A (en) * | 2017-02-10 | 2017-07-07 | 深圳大学 | A kind of work(filter-divider |
| CN107275740A (en) * | 2017-05-31 | 2017-10-20 | 南京邮电大学 | It is a kind of that there is the dual-frequency power divider for transmitting null character |
| CN108417938A (en) * | 2018-04-26 | 2018-08-17 | 电子科技大学 | A kind of micro-strip model filters power splitter |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112290184A (en) * | 2020-09-30 | 2021-01-29 | 中国航空工业集团公司雷华电子技术研究所 | Broadband power combiner with filtering characteristic |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111416182B (en) | 2021-07-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106602200A (en) | Micro-strip power dividing filter | |
| CN110429363B (en) | Three-passband power division filter based on multimode Y-shaped resonator | |
| CN109066039B (en) | Novel microstrip power division duplexer | |
| JP3304724B2 (en) | Dual mode filter | |
| CN106935948A (en) | A kind of work(filter-divider | |
| CN109273807B (en) | Novel high-performance broadband four-power-division filter | |
| CN110474138B (en) | Reconfigurable power division filter | |
| CN111384534B (en) | Three-way band-pass power division filter | |
| CN104795614A (en) | Broad-stopband electrically-tunable dual-frequency band-pass filter | |
| CN111416183B (en) | Novel single-passband filter coupler adopting double-layer circular patches | |
| CN110380168B (en) | Unbalanced-to-balanced dual-broadband power division filter | |
| CN114284673B (en) | Substrate integrated waveguide dual-band filtering balun | |
| CN109326855B (en) | Novel broadband four-power division filter | |
| CN109193087B (en) | Novel high-performance dual-passband four-power-division filter | |
| CN111416182B (en) | High-selectivity three-passband power division filter | |
| CN111613857B (en) | Double-passband filtering coupler adopting double-layer slotted circular patch | |
| CN108682926B (en) | High-selectivity dual-passband power division filter | |
| CN105826640A (en) | Multi-mode resonator based dual-mode balun bandpass filter | |
| CN111384535B (en) | Double-passband power division filter | |
| CN114512779B (en) | High-selectivity broadband LTCC (low temperature co-fired ceramic) filtering power divider integrated chip | |
| CN113964467B (en) | Balance-unbalanced type in-phase filtering power divider based on three-wire coupling | |
| CN111613856B (en) | Double-passband balance filter adopting double-layer circular patch | |
| CN112133992B (en) | Filtering power divider with high out-of-band rejection and full-band absorption functions | |
| CN212434808U (en) | Filter structure and filter | |
| CN111682292B (en) | Four-way power division filter based on four-mode resonator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |