CN109599645A - On piece second-order bandpass filter and Radio-Frequency Wireless Communication equipment - Google Patents
On piece second-order bandpass filter and Radio-Frequency Wireless Communication equipment Download PDFInfo
- Publication number
- CN109599645A CN109599645A CN201811502783.8A CN201811502783A CN109599645A CN 109599645 A CN109599645 A CN 109599645A CN 201811502783 A CN201811502783 A CN 201811502783A CN 109599645 A CN109599645 A CN 109599645A
- Authority
- CN
- China
- Prior art keywords
- metallic vias
- opening
- layer
- metal layer
- resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004891 communication Methods 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 99
- 239000002184 metal Substances 0.000 claims abstract description 99
- 238000005452 bending Methods 0.000 claims description 13
- 238000012545 processing Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 230000003542 behavioural effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000012995 silicone-based technology Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/2039—Galvanic coupling between Input/Output
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
The invention discloses a kind of on piece second-order bandpass filter and Radio-Frequency Wireless Communication equipment, the filter includes the first metal layer set gradually from top to bottom, second metal layer, plates capacitance layer and third metal layer, it is connected between the second metal layer and plates capacitance layer by metallic vias, the first metal layer is equipped with the first resonator, second resonator, first feed port and the second feed port, first resonator and the second resonator are symmetrical arranged, first feed port and the second feed port are symmetrical arranged, first feed port, first resonator, second resonator and the second feed port are sequentially connected；The Radio-Frequency Wireless Communication equipment includes above-mentioned filter.Filter of the invention has many advantages, such as small in size, handling ease, easy processing, is easy to integrated with other devices, can meet the requirement of modern communication systems well.
Description
Technical field
The present invention relates to a kind of filter, especially a kind of on piece second-order bandpass filter and Radio-Frequency Wireless Communication equipment,
Belong to wireless communication field.
Background technique
Microwave filter is the essential device of transmitting terminal and receiving end in Modern Communication System, it plays separation to signal
Effect, allows useful signal is as zero-decrement as possible to pass through, the decaying as big as possible to useless signal inhibits it to pass through.With
The development of wireless communication technique, the frequency band between signal is more and more narrow, and the size of various communication apparatus is smaller and smaller, this is just to filtering
More stringent requirements are proposed for the specification of device, reliability and size.Microstrip filter has high frequency selectivity, undershoot
Damage, power capacity is big, performance is stables, small size, the advantages that being easily integrated and with very high application value.
Currently, the design of the monolithic integrated microwave circuit (MMIC) of the 5th generation (5G) communication for Millimeter Wave Applications is
Step into a new era.Traditionally, the high-performance MMIC including passive device and active device is mainly in III/V technology
Implement, such as GaAs (GaAs).In recent years, some breakthroughs have been used for more realizing that these equipment are based on cost-effectiveness
Silicon-based technologies.Different passive devices, bandpass filter may is that one of them most indispensable equipment.Therefore extensive phase
Work is closed to deliver in the literature.The high-performance on piece BPF (Berkeley Packet Filter, bandpass filter) of design is
One extremely complex problem task, this is related to several design trade-offs.One of Basic Design challenge is how to weigh insertion
Loss, stopband attenuation and size this three.It substantially " is damaged " as silicon substrate, from the perspective of design, maximum limit
It is as compact as possible that the most effectual way that degree ground reduces insertion loss is to maintain optimum state design.
The 1980's IBM is to improve Si material and Ge is added, and to increase the speed of electron stream, reduces energy consumption and improves function
Can, it is unexpected successfully to combine Si and Ge.And after announcing that SiGe marches toward the mass production stage from 98 years IBM, over nearly two, three years,
SiGe has become one of the wireless communication IC process technique being most taken seriously.
From the point of view of material property, SiGe high frequency characteristics is good, and material safety is good, and thermal conductivity is good, and processing procedure is mature, whole
Right height, the tool advantage that cost is relatively low, in other words, SiGe not only can directly utilize the existing 200mm silicon wafer process of semiconductor, reach
To high integration, economic scale is created accordingly, the high speed characteristics for the GaAs that also matches in excellence or beauty.With the investment of the big factory of recent IDM, SiGe
Technology gradually cutoff frequency (fT) and breakdown voltage (Breakdown voltage) it is too low the problems such as improved and increasingly
It is practical.
SiGe had both possessed integrated level, yield and the cost advantage of silicon technology, but also with the 3rd to the 5th based semiconductor (such as arsenic
The advantages of gallium (GaAs) and indium phosphide (InP) are in terms of speed.As long as increase metal and dielectric stack reduce parasitic capacitance and
Inductance, so that it may which high quality passive component is integrated using SiGe semiconductor technology.In addition, by control it is Ge-doped can also designer
Part with temperature Behavioral change.SiGe BiCMOS technique technology is almost gone with silicon semiconductor super large-scale integration (VLSI)
All new technologies in industry are compatible, including insulator silicon (SOI) technology and channel isolation technology.
Summary of the invention
The purpose of the present invention is to solve the defects of the above-mentioned prior art, provide a kind of on piece second order bandpass filtering
Device, the filter have many advantages, such as small in size, handling ease, easy processing, are easy to integrated with other devices, can meet well
The requirement of modern communication systems.
Another object of the present invention is to provide a kind of Radio-Frequency Wireless Communication equipment.
The purpose of the present invention can be reached by adopting the following technical scheme that:
On piece second-order bandpass filter, including the first metal layer, second metal layer, the pole plate electricity set gradually from top to bottom
Hold layer and third metal layer, is connected between the second metal layer and plates capacitance layer by metallic vias, first gold medal
Belong to layer and is equipped with the first resonator, the second resonator, the first feed port and the second feed port, first resonator and the
Two resonators are symmetrical arranged, and first feed port and the second feed port are symmetrical arranged, the first feed port, the first resonance
Device, the second resonator and the second feed port are sequentially connected.
Further, first resonator and the second resonator include bending ground connection microstrip line and wherein side is opened
The rectangular ring microstrip line of mouth, the inside for bending ground connection microstrip line and extending to rectangular ring microstrip line from opening, and with
The other side of rectangular ring microstrip line connects.
Further, be additionally provided on the first metal layer both-side opening first opening earth shield ring, described first
Resonator and the second resonator are symmetricly set in the first opening earth shield ring, first feed port and the second feed end
Mouth is symmetricly set at the both-side opening of the first opening earth shield ring.
Further, the second metal layer is equipped with the first sheet metal, the second sheet metal and both-side opening second are opened
Mouth earth shield ring, first sheet metal and the second sheet metal are symmetricly set on the both-side opening of the second opening earth shield ring
Place, and the first sheet metal and the second sheet metal pass through metallic vias respectively and connect with plates capacitance layer.
Further, the plates capacitance layer be equipped with the first plates capacitance, the second plates capacitance and both-side opening the
Three opening earth shield rings, first plates capacitance and the second plates capacitance are symmetricly set on third opening earth shield ring
At both-side opening, and the first plates capacitance and the second plates capacitance pass through metallic vias respectively and connect with second metal layer.
Further, the 4th opening that the third metal layer is equipped with the first floor, the second floor and both-side opening connects
Ground shading ring, first floor and the second floor are symmetrical arranged, and the first floor and the second floor connect with the 4th opening respectively
It is connected at the both-side opening of ground shading ring.
Further, the first metallic vias layer, first gold medal are equipped between the first metal layer and second metal layer
Belong to the 5th opening earth shield ring that via layer is equipped with the first metallic vias, the second metallic vias and both-side opening, described the
One metallic vias and the second metallic vias are symmetricly set at the both-side opening of the 5th opening earth shield ring, and the first metal mistake
Hole and the second metallic vias are connect with second metal layer respectively.
Further, the second metallic vias layer, the second metal mistake are equipped between the second metal layer and third metal layer
Aperture layer is equipped with the 6th opening earth shield ring of both-side opening.
Further, it states and is equipped with third metallic vias layer, the third metal between second metal layer and plates capacitance layer
Via layer is equipped with the 7th opening earth shield ring of third metallic vias, the 4th metallic vias and both-side opening, the third
Metallic vias and the 4th metallic vias be symmetricly set on the 7th opening earth shield ring both-side opening at, third metallic vias and
The upper end of 4th metallic vias is connect with second metal layer, the lower end and plates capacitance of third metallic vias and the 4th metallic vias
Layer connection.
Further, it is 50 ohm of feed line structures that first feed port and the second feed port, which are all made of characteristic impedance,
At.
Another object of the present invention can be reached by adopting the following technical scheme that:
Radio-Frequency Wireless Communication equipment, including radio frequency chip, the radio frequency chip are equipped with above-mentioned on piece second order band logical and filter
Wave device.
The present invention have compared with the existing technology it is following the utility model has the advantages that
1, on piece second-order bandpass filter of the invention is designed based on 0.13umSiGe technique, using the first metal layer,
The multilayered structure that second metal layer, plates capacitance layer and third metal layer are constituted, wherein the first metal layer is equipped with and is sequentially connected
The first feed port, the first resonator, the second resonator and the second feed port, can by change resonator size come
Change the centre frequency of filter；In addition, by each metal layer cabling, in conjunction with distributed transmission line and chip manufacture technique
Advantage, has that size is small, structure is simple, it is integrated with other devices to be easy to, and has the advantages that good frequency selects, due to can
Substantially to reduce the size of filter, the Radio-Frequency Wireless Communication equipment increasingly minimized can be more adapted to.
2, two resonators on the first metal layer of on piece second-order bandpass filter of the invention all have bending ground connection
Microstrip line can increase the equivalent inductance of two resonators, while each layer structure has opening earth shield ring, can increase two
The equivalent capacity of a resonator further realizes the miniaturization of two resonators.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the on piece second-order bandpass filter of the embodiment of the present invention 1.
Fig. 2 is the first metal layer structural schematic diagram of the on piece second-order bandpass filter of the embodiment of the present invention 1.
Fig. 3 is the second metal layer structural schematic diagram of the on piece second-order bandpass filter of the embodiment of the present invention 1.
Fig. 4 is the plates capacitance schematic diagram of a layer structure of the on piece second-order bandpass filter of the embodiment of the present invention 1.
Fig. 5 is the third metal-layer structure schematic diagram of the on piece second-order bandpass filter of the embodiment of the present invention 1.
Fig. 6 is the first metallic vias schematic diagram of a layer structure of the on piece second-order bandpass filter of the embodiment of the present invention 1.
Fig. 7 is the second metallic vias schematic diagram of a layer structure of the on piece second-order bandpass filter of the embodiment of the present invention 1.
Fig. 8 is the third metallic vias schematic diagram of a layer structure of the on piece second-order bandpass filter of the embodiment of the present invention 1.
Fig. 9 is the Electromagnetic Simulation curve of the on piece second-order bandpass filter frequency response of the embodiment of the present invention 1.
Wherein, 1- the first metal layer, the first resonator of 101-, the bending ground connection microstrip line of 1011- first, the first square of 1012-
Shape ring-type microstrip line, the second resonator of 102-, the bending ground connection microstrip line of 1021- second, 1022- the second rectangular ring microstrip line,
The first feed port of 103-, the second feed port of 104-, 105- first are open earth shield ring, 2- second metal layer, 201- the
One sheet metal, the second sheet metal of 202-, the opening earth shield ring of 203- second, 3- plates capacitance layer, the first plates capacitance of 301-,
The second plates capacitance of 302-, 303- third opening earth shield ring, 4- third metal layer, the first floor 401-, the second ground 402-
Plate, the opening earth shield ring of 403- the 4th, 5- the first metallic vias layer, the first metallic vias of 501-, the second metallic vias of 502-,
The opening earth shield ring of 503- the 5th, 6- the second metallic vias layer, the opening earth shield ring of 601- the 6th, 7- third metallic vias
Layer, 701- third metallic vias, the 4th metallic vias of 702-, the opening earth shield ring of 703- the 7th.
Specific embodiment
Present invention will now be described in further detail with reference to the embodiments and the accompanying drawings, but embodiments of the present invention are unlimited
In this.
Embodiment 1:
As shown in FIG. 1 to FIG. 8, a kind of on piece second-order bandpass filter is present embodiments provided, which is multilayer knot
Structure comprising the first metal layer (Topmetal2 layers) 1, second metal layer (Topmetal1 layers) 2, plates capacitance layer (MIM layers) 3
With third metal layer (Metal5 layers) 4, the first metal layer 1, second metal layer 2, plates capacitance layer 3 and third metal layer 4 are from upper
It is set gradually under.
As depicted in figs. 1 and 2, the first metal layer 1 is equipped with the first resonator 101, the second resonator 102, first
Feed port 103 and the second feed port 104, the first feed port 103, the first resonator 101, the second resonator 102 and
Two feed ports 104 are sequentially connected, wherein the first resonator 101 and the second resonator 102 are symmetrical arranged, the first feed port
103 and second feed port 104 be symmetrical arranged, the first feed port 103 and the second feed port 104 are all made of characteristic impedance and are
50 ohm of feed lines are constituted.
Further, the first resonator 101 is identical with the structure of the second resonator 102, and the first resonator 101 includes first
Bending ground connection microstrip line 1011 and wherein the first rectangular ring microstrip line 1012 of a side opening, the first bending ground connection microstrip line
1011 extend to the inside of the first rectangular ring microstrip line 1012 from opening, and another with the first rectangular ring microstrip line 1012
Side connection, the first bending ground connection microstrip line 1011 can increase the equivalent capacity of the first resonator 101；Second resonator 102
It is grounded microstrip line 1021 and wherein the second rectangular ring microstrip line 1022 of a side opening including the second bending, the second bending connects
Ground microstrip line 1021 extends to the inside of the second rectangular ring microstrip line 1022 from opening, and with the second rectangular ring microstrip line
1022 other side connection, the second bending ground connection microstrip line 1021 can increase the equivalent capacity of the second resonator 102.
In order to increase the equivalent capacity of the first resonator 101 and the second resonator 102, is additionally provided on the first metal layer 1
One opening earth shield ring 105, the both-side opening of the first opening earth shield ring 105, from the point of view of Fig. 2, the first opening is connect
The upper and lower both-side opening of ground shading ring 105, the first resonator 101 and the second resonator 102 are symmetricly set on the first opening ground connection
In shading ring 105, the first feed port 103 and the second feed port 104 are symmetricly set on the first opening earth shield ring 105
At both-side opening.
As shown in figure 3, the second metal layer 2 is equipped with the first sheet metal 201, the second sheet metal 202 and the second opening
Earth shield ring 203, the first sheet metal 201 and the second sheet metal 202 are connect by metallic vias with plates capacitance layer 3 respectively,
The both-side opening of second opening earth shield ring 203, from the point of view of Fig. 3, upper and lower the two of the second opening earth shield ring 203
Side opening, the first sheet metal 201 and the second sheet metal 202 are symmetricly set on the both-side opening of the second opening earth shield ring 203
Place.
As shown in figure 4, the plates capacitance layer 3 is equipped with the first plates capacitance 301, the second plates capacitance 302 and third
Be open earth shield ring 303, the both-side opening of third opening earth shield ring 303, from the point of view of Fig. 4, third opening ground connection
The upper and lower both-side opening of shading ring 303, the first plates capacitance 301 and the second plates capacitance 302 are symmetricly set on third opening and connect
At the both-side opening of ground shading ring 303.
As shown in figure 5, the third metal layer 4 is equipped with the first floor 401, the second floor 402 and the 4th opening ground connection
Shading ring 403, the both-side opening of the 4th opening earth shield ring 403, from the point of view of Fig. 5, the 4th opening earth shield ring 403
Upper and lower both-side opening, the first floor 401 and the second floor 402 are symmetrical arranged, and the two of the 4th opening earth shield ring 403
It is connected at side opening.
Further, the first metallic vias layer (Topvia2 layers) 5 are equipped between the first metal layer 1 and second metal layer 2,
As shown in fig. 6, the first metallic vias layer 5 is equipped with the first metallic vias 501, the second metallic vias 502 and the 5th opening ground connection
Shading ring 503, the first metallic vias 501 are connect with the first sheet metal 201, and the second metallic vias 502 and the second sheet metal 202 connect
Connect, the 5th opening earth shield ring 503 both-side opening, from the point of view of Fig. 6, the 5th opening earth shield ring 503 it is upper and lower
Both-side opening, the first metallic vias 501 and the second metallic vias 502 are symmetricly set on the two of the 5th opening earth shield ring 503
At side opening.
Further, the second metallic vias layer (Topvia1 layers) 6 are equipped between second metal layer 2 and third metal layer 3,
As shown in fig. 7, the second metallic vias layer 6 is equipped with the 6th opening earth shield ring 601, the 6th opening earth shield ring 601
Both-side opening, from the point of view of Fig. 7, the upper and lower both-side opening of the 6th opening earth shield ring 601.
Further, it is equipped with third metallic vias layer (Vmim layers) 7 between second metal layer 2 and plates capacitance layer 3, such as schemes
Shown in 8, third metallic vias layer 7 is equipped with third metallic vias 701, the 4th metallic vias 702 and the 7th opening earth shield
Ring 703, the both-side opening of the 7th opening earth shield ring 703, from the point of view of Fig. 8, the 7th opening earth shield ring 703
Upper and lower both-side opening, third metallic vias 701 and the 4th metallic vias 702 are symmetricly set on the 7th opening earth shield ring 703
Both-side opening at, the upper end of third metallic vias 701 is connect with the first sheet metal 201, the lower end of third metallic vias 701 with
The connection of first plates capacitance 301, the upper end of the 4th metallic vias 702 are connect with the second sheet metal 202, the 4th metallic vias 702
Lower end connect with the second plates capacitance 302.
In the present embodiment, metal material that the first metal layer 1, second metal layer 2 and third metal layer 4 use can be for
Any one of aluminium, iron, tin, copper, silver, gold and platinum, or can be any one alloy of aluminium, iron, tin, copper, silver, gold and platinum.
The Electromagnetic Simulation curve of the filter freguency response of the present embodiment is as shown in figure 9, S11 indicates the first feed end in figure
The return loss of mouth, S21 indicate that the positive transmission coefficient of the first feed port to the second feed port, S12 indicate the second feed
Port to the first feed port reverse transfer coefficient, S22 indicate the second feed port return loss, can be seen in figure
Arrive, in the frequency range of 30GHz~55GHz, | S11 | value all in -10dB hereinafter, simultaneously there are two apparent resonance point, together
Sample, in the frequency range, | S22 | value all in -10dB hereinafter, simultaneously there are two apparent resonance points.
Embodiment 2:
A kind of Radio-Frequency Wireless Communication equipment is present embodiments provided, which can be mobile phone, tablet computer etc. comprising
Radio frequency chip, the radio frequency chip are equipped with the on piece second-order bandpass filter of embodiment 1.
In conclusion on piece second-order bandpass filter of the invention is designed based on 0.13umSiGe technique, using first
The multilayered structure that metal layer, second metal layer, plates capacitance layer and third metal layer are constituted, wherein the first metal layer be equipped with according to
The first feed port, the first resonator, the second resonator and the second feed port of secondary connection, can be by changing resonator
Size changes the centre frequency of filter；In addition, by each metal layer cabling, in conjunction with distributed transmission line and chip manufacture
The advantages of technique, have that size is small, structure is simple, it is integrated with other devices to be easy to, and have the advantages that good frequency selects,
Due to can substantially reduce the size of filter, the Radio-Frequency Wireless Communication equipment increasingly minimized can be more adapted to.
The above, only the invention patent preferred embodiment, but the scope of protection of the patent of the present invention is not limited to
This, anyone skilled in the art is in the range disclosed in the invention patent, according to the present invention the skill of patent
Art scheme and its inventive concept are subject to equivalent substitution or change, belong to the scope of protection of the patent of the present invention.
Claims (10)
1. on piece second-order bandpass filter, it is characterised in that: including the first metal layer, the second metal set gradually from top to bottom
Layer, plates capacitance layer and third metal layer are connected between the second metal layer and plates capacitance layer by metallic vias, institute
The first metal layer is stated equipped with the first resonator, the second resonator, the first feed port and the second feed port, described first is humorous
Vibration device and the second resonator are symmetrical arranged, and first feed port and the second feed port are symmetrical arranged, the first feed port,
First resonator, the second resonator and the second feed port are sequentially connected.
2. on piece second-order bandpass filter according to claim 1, it is characterised in that: first resonator and second humorous
Vibration device includes bending ground connection microstrip line and the wherein rectangular ring microstrip line of a side opening, the bending ground connection microstrip line from
Opening extends to the inside of rectangular ring microstrip line, and connect with the other side of rectangular ring microstrip line.
3. on piece second-order bandpass filter according to claim 1, it is characterised in that: be additionally provided on the first metal layer
First opening earth shield ring of both-side opening, first resonator and the second resonator are symmetricly set on the first opening ground connection
In shading ring, first feed port and the second feed port are symmetricly set on the both-side opening of the first opening earth shield ring
Place.
4. on piece second-order bandpass filter according to claim 1, it is characterised in that: the second metal layer is equipped with the
Second opening earth shield ring of one sheet metal, the second sheet metal and both-side opening, first sheet metal and the second sheet metal
It is symmetricly set at the both-side opening of the second opening earth shield ring, and the first sheet metal and the second sheet metal pass through metal respectively
Via hole is connect with plates capacitance layer.
5. on piece second-order bandpass filter according to claim 1, it is characterised in that: the plates capacitance layer is equipped with the
The third opening earth shield ring of one plates capacitance, the second plates capacitance and both-side opening, first plates capacitance and second
Plates capacitance is symmetricly set at the both-side opening of third opening earth shield ring, and the first plates capacitance and the second plates capacitance
It is connect respectively by metallic vias with second metal layer.
6. on piece second-order bandpass filter according to claim 1, it is characterised in that: the third metal layer is equipped with the
The 4th opening earth shield ring on one floor, the second floor and both-side opening, first floor and the second floor are symmetrical arranged,
And first floor and the second floor connect respectively at the both-side opening of the 4th opening earth shield ring.
7. on piece second-order bandpass filter according to claim 1-6, it is characterised in that: the first metal layer
The first metallic vias layer is equipped between second metal layer, the first metallic vias layer is equipped with the first metallic vias, second
5th opening earth shield ring of metallic vias and both-side opening, first metallic vias and the second metallic vias are symmetrical arranged
The 5th opening earth shield ring both-side opening at, and the first metallic vias and the second metallic vias respectively with second metal layer
Connection.
8. on piece second-order bandpass filter according to claim 1-6, it is characterised in that: the second metal layer
The second metallic vias layer is equipped between third metal layer, the second metallic vias layer is equipped with the 6th opening ground connection of both-side opening
Shading ring.
9. on piece second-order bandpass filter according to claim 1-6, it is characterised in that: the second metal layer
Third metallic vias layer is equipped between plates capacitance layer, the third metallic vias layer is equipped with third metallic vias, the 4th
7th opening earth shield ring of metallic vias and both-side opening, the third metallic vias and the 4th metallic vias are symmetrical arranged
At the both-side opening of the 7th opening earth shield ring, the upper end and second metal layer of third metallic vias and the 4th metallic vias
The lower end of connection, third metallic vias and the 4th metallic vias is connect with plates capacitance layer.
10. Radio-Frequency Wireless Communication equipment, including radio frequency chip, it is characterised in that: the radio frequency chip is equipped with claim 1-9
Described in any item on piece second-order bandpass filters.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811502783.8A CN109599645B (en) | 2018-12-10 | 2018-12-10 | On-chip second-order band-pass filter and radio frequency wireless communication device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811502783.8A CN109599645B (en) | 2018-12-10 | 2018-12-10 | On-chip second-order band-pass filter and radio frequency wireless communication device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109599645A true CN109599645A (en) | 2019-04-09 |
| CN109599645B CN109599645B (en) | 2023-11-03 |
Family
ID=65962186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811502783.8A Active CN109599645B (en) | 2018-12-10 | 2018-12-10 | On-chip second-order band-pass filter and radio frequency wireless communication device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109599645B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533939A (en) * | 2009-04-09 | 2009-09-16 | 山西大学 | Collaboratively designed double frequency-band antenna-filter device |
| CN103378387A (en) * | 2013-07-02 | 2013-10-30 | 华南理工大学 | Wide-stop-band LTCC band-pass filter based on frequency selectivity coupling technology |
| CN206564310U (en) * | 2016-10-24 | 2017-10-17 | 华南理工大学 | A kind of LTCC balanced type bandpass filters coupled based on multifrequency |
-
2018
- 2018-12-10 CN CN201811502783.8A patent/CN109599645B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533939A (en) * | 2009-04-09 | 2009-09-16 | 山西大学 | Collaboratively designed double frequency-band antenna-filter device |
| CN103378387A (en) * | 2013-07-02 | 2013-10-30 | 华南理工大学 | Wide-stop-band LTCC band-pass filter based on frequency selectivity coupling technology |
| CN206564310U (en) * | 2016-10-24 | 2017-10-17 | 华南理工大学 | A kind of LTCC balanced type bandpass filters coupled based on multifrequency |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109599645B (en) | 2023-11-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI531108B (en) | A duplexer and a circuit structure of the same and a radio frequency transceiver device | |
| CN102208903B (en) | Semiconductor devices and forming method thereof | |
| KR101721703B1 (en) | Semiconductor device and method of forming rf fem with lc filter and ipd filter over substrate | |
| US20140253262A1 (en) | Rf choke device for integrated circuits | |
| US20090219908A1 (en) | Method and system for processing signals via diplexers embedded in an integrated circuit package | |
| CN111540712B (en) | Integrated device manufacturing method and related product | |
| CN110676287A (en) | Monolithic integrated radio frequency device, preparation method and integrated circuit system | |
| CN108631036B (en) | Single-chip orthogonal 3dB directional coupler | |
| CN115459725A (en) | Miniaturized band-pass filter and radio frequency front-end circuit | |
| CN209282362U (en) | Modified on piece second-order bandpass filter and Radio-Frequency Wireless Communication equipment | |
| CN209282361U (en) | On piece second-order bandpass filter and Radio-Frequency Wireless Communication equipment | |
| CN106230388B (en) | High-noise suppression SHF band low-noise amplifier module | |
| CN109585987A (en) | Modified on piece second-order bandpass filter and Radio-Frequency Wireless Communication equipment | |
| EP4325722A2 (en) | Semiconductor device, communication apparatus, and producing method thereof | |
| CN109599645A (en) | On piece second-order bandpass filter and Radio-Frequency Wireless Communication equipment | |
| CN115799787B (en) | LTCC band-pass filter with high suppression degree | |
| US7262674B2 (en) | Bandpass filter having first and second serially coupled collection of filter components for providing upper and lower rejection notches | |
| CN109150130A (en) | A kind of inductive type bandpass filter | |
| CN115603014B (en) | LTCC-based high-selectivity high-inhibition-degree single-pole double-throw filter switch | |
| CN114374369A (en) | Low temperature co-fired ceramic (LTCC) process-based duplexer with low-frequency transmission zero point | |
| CN102142612B (en) | Miniaturized on-chip antenna capable of resisting harmonic waves | |
| Lu et al. | Miniature 60‐GHz‐band bandpass filter with 2.55‐dB insertion‐loss using standard 0.13 μm CMOS technology | |
| Zhang et al. | A study of dual-mode bandpass filter integrated in BGA package for single-chip RF transceivers | |
| CN205564932U (en) | Novel super broadband band -pass filter of LTCC | |
| CN220963708U (en) | Silicon-based GaN wide-stopband high-selectivity millimeter wave on-chip filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |