CN109599645B - On-chip second-order band-pass filter and radio frequency wireless communication device - Google Patents
On-chip second-order band-pass filter and radio frequency wireless communication device Download PDFInfo
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- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
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- 229910052737 gold Inorganic materials 0.000 description 2
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- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
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- 239000010703 silicon Substances 0.000 description 2
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/201—Filters for transverse electromagnetic waves
- H01P1/203—Strip line filters
- H01P1/2039—Galvanic coupling between Input/Output
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Abstract
The invention discloses an on-chip second-order band-pass filter and radio frequency wireless communication equipment, wherein the filter comprises a first metal layer, a second metal layer, a polar plate capacitor layer and a third metal layer which are sequentially arranged from top to bottom, the second metal layer is connected with the polar plate capacitor layer through a metal via hole, a first resonator, a second resonator, a first feed port and a second feed port are arranged on the first metal layer, the first resonator and the second resonator are symmetrically arranged, the first feed port and the second feed port are symmetrically arranged, and the first feed port, the first resonator, the second resonator and the second feed port are sequentially connected; the radio frequency wireless communication device comprises the filter. The filter has the advantages of small volume, easy processing, easy integration with other devices and the like, and can well meet the requirements of modern communication systems.
Description
Technical Field
The invention relates to a filter, in particular to an on-chip second-order band-pass filter and radio frequency wireless communication equipment, and belongs to the field of wireless communication.
Background
The microwave filter is an indispensable device for a transmitting end and a receiving end in a modern communication system, and has a separation function on signals, so that useful signals pass through without attenuation as much as possible, and useless signals are restrained from passing through by attenuation as much as possible. With the development of wireless communication technology, the frequency bands between signals are narrower and the sizes of various communication devices are smaller, which puts higher demands on the specifications, reliability and size of the filter. The microstrip filter has the advantages of high frequency selectivity, low insertion loss, large power capacity, stable performance, small size, easy integration and the like, and has high application value.
Currently, the design of Monolithic Microwave Integrated Circuits (MMICs) for fifth generation (5G) communications for millimeter wave applications is moving into a new era. Traditionally, high performance MMICs, including passive and active devices, are implemented primarily in III/V technology, such as gallium arsenide (GaAs). In recent years, some breakthroughs have been used to more fully implement cost-effective silicon-based technologies for these devices. Different passive devices, bandpass filters are perhaps the most indispensable ones. Thus, extensive related work has been published in the literature. The design of a high performance on-chip BPF (Berkeley Packet Filter, bandpass filter) is a very complex problem task, which involves several design tradeoffs. One of the fundamental design challenges is how to trade-off the insertion loss, stop band attenuation, and size. As silicon substrates are "lossy" in nature, the most effective way to minimize insertion loss from a design standpoint is to keep the best mode design as compact as possible.
IBM in the 1980 s added Ge to improve Si materials to increase the velocity of electron flow, reduce energy consumption and improve functionality, but has unexpectedly succeeded in combining Si and Ge. In recent two or three years, after IBM has announced the SiGe miclike mass production stage, siGe has become one of the most important wireless communication IC process technologies.
In terms of material characteristics, siGe has good high-frequency characteristics, good material safety, good thermal conductivity, mature process, high integration degree and low cost, in other words, siGe can directly utilize the existing 200mm wafer process of a semiconductor to achieve high integration degree, thereby creating economic scale and high-speed characteristics of GaAs. With the recent investment of IDM factories, siGe technology has been increasingly put to practical use with improvements in terms of cutoff frequency (fT) and breakdown voltage (Breakdown voltage) being too low.
SiGe has both the integration, yield and cost advantages of silicon technology and the speed advantages of class 3 to 5 semiconductors such as gallium arsenide (GaAs) and indium phosphide (InP).
Disclosure of Invention
The invention aims to solve the defects in the prior art, and provides an on-chip second-order band-pass filter which has the advantages of small size, easiness in processing, easiness in integration with other devices and the like, and can well meet the requirements of a modern communication system.
It is another object of the present invention to provide a radio frequency wireless communication device.
The aim of the invention can be achieved by adopting the following technical scheme:
the second-order band-pass filter comprises a first metal layer, a second metal layer, a polar plate capacitor layer and a third metal layer which are sequentially arranged from top to bottom, wherein the second metal layer is connected with the polar plate capacitor layer through a metal via hole, a first resonator, a second resonator, a first feed port and a second feed port are arranged on the first metal layer, the first resonator and the second resonator are symmetrically arranged, the first feed port and the second feed port are symmetrically arranged, and the first feed port, the first resonator, the second resonator and the second feed port are sequentially connected.
Further, the first resonator and the second resonator each include a folded grounding microstrip line and a rectangular annular microstrip line with one side opened, and the folded grounding microstrip line extends from the opening to the inside of the rectangular annular microstrip line and is connected with the other side of the rectangular annular microstrip line.
Further, the first metal layer is further provided with a first opening grounding shielding ring with two openings at two sides, the first resonator and the second resonator are symmetrically arranged in the first opening grounding shielding ring, and the first feed port and the second feed port are symmetrically arranged at two openings at the two sides of the first opening grounding shielding ring.
Further, the second metal layer is provided with a first metal sheet, a second metal sheet and second opening grounding shielding rings with openings on two sides, the first metal sheet and the second metal sheet are symmetrically arranged at the openings on two sides of the second opening grounding shielding rings, and the first metal sheet and the second metal sheet are respectively connected with the polar plate capacitor layer through metal through holes.
Further, a first electrode plate capacitor, a second electrode plate capacitor and third opening grounding shielding rings with openings on two sides are arranged on the electrode plate capacitor layer, the first electrode plate capacitor and the second electrode plate capacitor are symmetrically arranged at openings on two sides of the third opening grounding shielding rings, and the first electrode plate capacitor and the second electrode plate capacitor are respectively connected with the second metal layer through metal through holes.
Further, the third metal layer is provided with a first floor, a second floor and fourth opening grounding shielding rings with openings at two sides, the first floor and the second floor are symmetrically arranged, and the first floor and the second floor are respectively connected with the openings at two sides of the fourth opening grounding shielding rings.
Further, a first metal via layer is arranged between the first metal layer and the second metal layer, a first metal via, a second metal via and a fifth opening grounding shielding ring with two openings on two sides are arranged on the first metal via layer, the first metal via and the second metal via are symmetrically arranged at two openings on two sides of the fifth opening grounding shielding ring, and the first metal via and the second metal via are respectively connected with the second metal layer.
Further, a second metal via layer is arranged between the second metal layer and the third metal layer, and a sixth opening grounding shielding ring with openings at two sides is arranged on the second metal via layer.
Further, a third metal via layer is arranged between the second metal layer and the polar plate capacitance layer, a third metal via, a fourth metal via and seventh open-ended grounding shielding rings on two sides are arranged on the third metal via layer, the third metal via and the fourth metal via are symmetrically arranged at two open sides of the seventh open-ended grounding shielding rings, the upper ends of the third metal via and the fourth metal via are connected with the second metal layer, and the lower ends of the third metal via and the fourth metal via are connected with the polar plate capacitance layer.
Further, the first feed port and the second feed port are both formed by adopting a 50 ohm feeder with characteristic impedance.
The other object of the invention can be achieved by adopting the following technical scheme:
the radio frequency wireless communication device comprises a radio frequency chip, wherein the radio frequency chip is provided with the on-chip second-order band-pass filter.
Compared with the prior art, the invention has the following beneficial effects:
1. the on-chip second-order band-pass filter is designed based on a 0.13um SiGe process, adopts a multilayer structure formed by a first metal layer, a second metal layer, a polar plate capacitor layer and a third metal layer, wherein a first feed port, a first resonator, a second resonator and a second feed port which are sequentially connected are arranged on the first metal layer, and the center frequency of the filter can be changed by changing the size of the resonator; in addition, through the wiring of each metal layer, the advantages of combining the distributed transmission line and the chip processing technology are provided, the device has the advantages of small size, simple structure, easy integration with other devices and good frequency selection, and the device can be more suitable for increasingly miniaturized radio frequency wireless communication equipment due to the fact that the size of the filter can be greatly reduced.
2. The two resonators on the first metal layer of the on-chip second-order band-pass filter are provided with the bent grounding microstrip lines, so that the equivalent inductance of the two resonators can be increased, and meanwhile, each layer of structure is provided with the open grounding shielding ring, so that the equivalent capacitance of the two resonators can be increased, and the miniaturization of the two resonators is further realized.
Drawings
Fig. 1 is a schematic diagram of an on-chip second order bandpass filter according to embodiment 1 of the invention.
Fig. 2 is a schematic diagram of a first metal layer structure of an on-chip second order bandpass filter according to embodiment 1 of the invention.
Fig. 3 is a schematic diagram of a second metal layer structure of an on-chip second order bandpass filter according to embodiment 1 of the invention.
Fig. 4 is a schematic diagram of a plate capacitor layer structure of an on-chip second-order bandpass filter according to embodiment 1 of the invention.
Fig. 5 is a schematic diagram of a third metal layer structure of an on-chip second-order bandpass filter according to embodiment 1 of the invention.
Fig. 6 is a schematic diagram of a first metal via layer structure of an on-chip second order bandpass filter according to embodiment 1 of the invention.
Fig. 7 is a schematic diagram of a second metal via layer structure of an on-chip second order bandpass filter according to embodiment 1 of the invention.
Fig. 8 is a schematic diagram of a third metal via layer structure of an on-chip second order bandpass filter according to embodiment 1 of the invention.
Fig. 9 is an electromagnetic simulation curve of the frequency response of the on-chip second order bandpass filter according to embodiment 1 of the invention.
The antenna comprises a first metal layer, a first resonator, a 1011-first bent grounding microstrip line, a 1012-first rectangular annular microstrip line, a second resonator, a 1021-second bent grounding microstrip line, a 1022-second rectangular annular microstrip line, a 103-first feed port, a 104-second feed port, a 105-first open grounding shielding ring, a 2-second metal layer, a 201-first metal sheet, a 202-second metal sheet, a 203-second open grounding shielding ring, a 3-polar plate capacitor layer, a 301-first polar plate capacitor, a 302-second polar plate capacitor, a 303-third open grounding shielding ring, a 4-third metal layer, a 401-first floor, a 402-second floor, a 403-fourth open grounding shielding ring, a 5-first metal via layer, a 501-first metal via, a 502-second metal via, a 503-fifth open grounding shielding ring, a 6-second metal via layer, a 601-sixth open grounding shielding ring, a 7-third metal via, a 403-fourth open grounding shielding ring, a 702-fourth metal via, a seven-opening grounding ring and a 703-fourth metal via.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but embodiments of the present invention are not limited thereto.
Example 1:
as shown in fig. 1 to 8, the present embodiment provides an on-chip second order band-pass filter, which has a multilayer structure and includes a first Metal layer (topm Metal2 layer) 1, a second Metal layer (topm Metal1 layer) 2, a plate capacitor layer (MIM layer) 3, and a third Metal layer (Metal 5 layer) 4, where the first Metal layer 1, the second Metal layer 2, the plate capacitor layer 3, and the third Metal layer 4 are sequentially disposed from top to bottom.
As shown in fig. 1 and fig. 2, the first metal layer 1 is provided with a first resonator 101, a second resonator 102, a first feeding port 103 and a second feeding port 104, and the first feeding port 103, the first resonator 101, the second resonator 102 and the second feeding port 104 are sequentially connected, where the first resonator 101 and the second resonator 102 are symmetrically arranged, the first feeding port 103 and the second feeding port 104 are symmetrically arranged, and the first feeding port 103 and the second feeding port 104 are both formed by adopting a feeder line with a characteristic impedance of 50 ohms.
Further, the first resonator 101 and the second resonator 102 have the same structure, the first resonator 101 includes a first folded grounding microstrip line 1011 and a first rectangular annular microstrip line 1012 with one side opened, the first folded grounding microstrip line 1011 extends from the opening to the inside of the first rectangular annular microstrip line 1012 and is connected to the other side of the first rectangular annular microstrip line 1012, and the first folded grounding microstrip line 1011 can increase the equivalent capacitance of the first resonator 101; the second resonator 102 includes a second folded grounding microstrip 1021 and a second rectangular loop microstrip 1022 with one side thereof opened, the second folded grounding microstrip 1021 extending from the opening to the inside of the second rectangular loop microstrip 1022 and being connected to the other side of the second rectangular loop 1022, the second folded grounding microstrip 1021 increasing the equivalent capacitance of the second resonator 102.
In order to increase the equivalent capacitance of the first resonator 101 and the second resonator 102, the first metal layer 1 is further provided with a first open-ended ground shielding ring 105, two sides of the first open-ended ground shielding ring 105 are open, from the perspective of fig. 2, the upper side and the lower side of the first open-ended ground shielding ring 105 are open, the first resonator 101 and the second resonator 102 are symmetrically arranged in the first open-ended ground shielding ring 105, and the first feed port 103 and the second feed port 104 are symmetrically arranged at the two side openings of the first open-ended ground shielding ring 105.
As shown in fig. 3, the second metal layer 2 is provided with a first metal sheet 201, a second metal sheet 202 and a second open-end grounding shielding ring 203, the first metal sheet 201 and the second metal sheet 202 are respectively connected with the electrode plate capacitor layer 3 through metal vias, two sides of the second open-end grounding shielding ring 203 are open, from the perspective of fig. 3, the upper and lower sides of the second open-end grounding shielding ring 203 are open, and the first metal sheet 201 and the second metal sheet 202 are symmetrically arranged at two sides of the second open-end grounding shielding ring 203.
As shown in fig. 4, the plate capacitor layer 3 is provided with a first plate capacitor 301, a second plate capacitor 302 and a third open-end grounding shielding ring 303, two sides of the third open-end grounding shielding ring 303 are open, and from the perspective of fig. 4, the upper and lower sides of the third open-end grounding shielding ring 303 are open, and the first plate capacitor 301 and the second plate capacitor 302 are symmetrically arranged at two side openings of the third open-end grounding shielding ring 303.
As shown in fig. 5, the third metal layer 4 is provided with a first floor 401, a second floor 402 and a fourth open-ended ground shield ring 403, two sides of the fourth open-ended ground shield ring 403 are open, from the perspective of fig. 5, two upper and lower sides of the fourth open-ended ground shield ring 403 are open, the first floor 401 and the second floor 402 are symmetrically arranged, and two side openings of the fourth open-ended ground shield ring 403 are connected.
Further, a first metal via layer (Topvia 2 layer) 5 is disposed between the first metal layer 1 and the second metal layer 2, as shown in fig. 6, a first metal via 501, a second metal via 502 and a fifth opening ground shield ring 503 are disposed on the first metal via layer 5, the first metal via 501 is connected with the first metal sheet 201, the second metal via 502 is connected with the second metal sheet 202, two sides of the fifth opening ground shield ring 503 are opened, from the perspective of fig. 6, the upper and lower sides of the fifth opening ground shield ring 503 are opened, and the first metal via 501 and the second metal via 502 are symmetrically disposed at two sides of the fifth opening ground shield ring 503.
Further, a second metal via layer (Topvia 1 layer) 6 is disposed between the second metal layer 2 and the third metal layer 3, as shown in fig. 7, a sixth open ground shield ring 601 is disposed on the second metal via layer 6, and two sides of the sixth open ground shield ring 601 are open, and from the perspective of fig. 7, the upper and lower sides of the sixth open ground shield ring 601 are open.
Further, a third metal via layer (Vmim layer) 7 is disposed between the second metal layer 2 and the plate capacitor layer 3, as shown in fig. 8, a third metal via 701, a fourth metal via 702 and a seventh open ground shield ring 703 are disposed on the third metal via layer 7, two sides of the seventh open ground shield ring 703 are open, from the perspective of fig. 8, the upper and lower sides of the seventh open ground shield ring 703 are open, the third metal via 701 and the fourth metal via 702 are symmetrically disposed at two side openings of the seventh open ground shield ring 703, the upper end of the third metal via 701 is connected with the first metal sheet 201, the lower end of the third metal via 701 is connected with the first plate capacitor 301, the upper end of the fourth metal via 702 is connected with the second metal sheet 202, and the lower end of the fourth metal via 702 is connected with the second plate capacitor 302.
In this embodiment, the metal materials used for the first metal layer 1, the second metal layer 2, and the third metal layer 4 may be any one of aluminum, iron, tin, copper, silver, gold, and platinum, or may be an alloy of any one of aluminum, iron, tin, copper, silver, gold, and platinum.
The electromagnetic simulation curve of the frequency response of the filter of this embodiment is shown in fig. 9, where S11 represents the return loss of the first feeding port, S21 represents the forward transmission coefficient from the first feeding port to the second feeding port, S12 represents the reverse transmission coefficient from the second feeding port to the first feeding port, and S22 represents the return loss of the second feeding port, and it can be seen that in the frequency range of 30GHz to 55GHz, the values of |s11| are all below-10 dB, and there are two distinct resonance points, and similarly, in the frequency range, the values of |s22| are all below-10 dB, and there are two distinct resonance points.
Example 2:
the embodiment provides a radio frequency wireless communication device, which may be a mobile phone, a tablet computer, etc., and includes a radio frequency chip, where the radio frequency chip is provided with an on-chip second-order band-pass filter of embodiment 1.
In summary, the on-chip second-order band-pass filter is designed based on the 0.13um sige technology, and adopts a multi-layer structure composed of a first metal layer, a second metal layer, a polar plate capacitor layer and a third metal layer, wherein a first feed port, a first resonator, a second resonator and a second feed port which are sequentially connected are arranged on the first metal layer, and the center frequency of the filter can be changed by changing the size of the resonator; in addition, through the wiring of each metal layer, the advantages of combining the distributed transmission line and the chip processing technology are provided, the device has the advantages of small size, simple structure, easy integration with other devices and good frequency selection, and the device can be more suitable for increasingly miniaturized radio frequency wireless communication equipment due to the fact that the size of the filter can be greatly reduced.
The above-mentioned embodiments are only preferred embodiments of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can make equivalent substitutions or modifications according to the technical solution and the inventive concept of the present invention within the scope of the present invention disclosed in the present invention patent, and all those skilled in the art belong to the protection scope of the present invention.
Claims (8)
1. On-chip second order band-pass filter, its characterized in that: the device comprises a first metal layer, a second metal layer, a polar plate capacitor layer and a third metal layer which are sequentially arranged from top to bottom, wherein the second metal layer is connected with the polar plate capacitor layer through a metal via hole, a first resonator, a second resonator, a first feed port and a second feed port are arranged on the first metal layer, the first resonator and the second resonator are symmetrically arranged, the first feed port and the second feed port are symmetrically arranged, and the first feed port, the first resonator, the second resonator and the second feed port are sequentially connected;
the first resonator and the second resonator both comprise a bent grounding microstrip line and a rectangular annular microstrip line with one side open, and the bent grounding microstrip line extends from the opening to the inside of the rectangular annular microstrip line and is connected with the other side of the rectangular annular microstrip line;
the first metal layer is also provided with a first open grounding shielding ring with two open sides, the first resonator and the second resonator are symmetrically arranged in the first open grounding shielding ring, and the first feed port and the second feed port are symmetrically arranged at the two open sides of the first open grounding shielding ring; the second metal layer is provided with a second opening grounding shielding ring with openings at two sides, the polar plate capacitor layer is provided with a third opening grounding shielding ring with openings at two sides, and the third metal layer is provided with a fourth opening grounding shielding ring with openings at two sides.
2. An on-chip second order bandpass filter according to claim 1, characterized in that: the first metal sheet and the second metal sheet are symmetrically arranged at openings on two sides of the second opening grounding shielding ring and are respectively connected with the polar plate capacitor layer through metal through holes.
3. An on-chip second order bandpass filter according to claim 1, characterized in that: the electrode plate capacitor layer is also provided with a first electrode plate capacitor and a second electrode plate capacitor, the first electrode plate capacitor and the second electrode plate capacitor are symmetrically arranged at openings on two sides of the third opening grounding shielding ring, and the first electrode plate capacitor and the second electrode plate capacitor are respectively connected with the second metal layer through metal through holes.
4. An on-chip second order bandpass filter according to claim 1, characterized in that: the third metal layer is also provided with a first floor and a second floor which are symmetrically arranged, and the first floor and the second floor are respectively connected with openings on two sides of the fourth grounding shielding ring.
5. An on-chip second order bandpass filter according to any one of claims 1-4 wherein: the first metal via hole layer is arranged between the first metal layer and the second metal layer, the first metal via hole layer is provided with a first metal via hole, a second metal via hole and fifth opening grounding shielding rings with openings on two sides, the first metal via hole and the second metal via hole are symmetrically arranged at openings on two sides of the fifth opening grounding shielding rings, and the first metal via hole and the second metal via hole are respectively connected with the second metal layer.
6. An on-chip second order bandpass filter according to any one of claims 1-4 wherein: and a second metal via layer is arranged between the second metal layer and the third metal layer, and a sixth opening grounding shielding ring with openings at two sides is arranged on the second metal via layer.
7. An on-chip second order bandpass filter according to any one of claims 1-4 wherein: the third metal via hole layer is arranged between the second metal layer and the polar plate capacitance layer, a seventh opening grounding shielding ring with a third metal via hole, a fourth metal via hole and two openings on two sides is arranged on the third metal via hole layer, the third metal via hole and the fourth metal via hole are symmetrically arranged at two openings on two sides of the seventh opening grounding shielding ring, the upper ends of the third metal via hole and the fourth metal via hole are connected with the second metal layer, and the lower ends of the third metal via hole and the fourth metal via hole are connected with the polar plate capacitance layer.
8. Radio frequency wireless communication equipment, including radio frequency chip, its characterized in that: an on-chip second order band pass filter as claimed in any one of claims 1 to 7 provided on said radio frequency chip.
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| CN206564310U (en) * | 2016-10-24 | 2017-10-17 | 华南理工大学 | A kind of LTCC balanced type bandpass filters coupled based on multifrequency |
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2018
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533939A (en) * | 2009-04-09 | 2009-09-16 | 山西大学 | Collaboratively designed double frequency-band antenna-filter device |
| CN103378387A (en) * | 2013-07-02 | 2013-10-30 | 华南理工大学 | Wide-stop-band LTCC band-pass filter based on frequency selectivity coupling technology |
| CN206564310U (en) * | 2016-10-24 | 2017-10-17 | 华南理工大学 | A kind of LTCC balanced type bandpass filters coupled based on multifrequency |
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