CN109596965A - A method of judging the avalanche photodide APD optimum operating voltage of 10G EPON - Google Patents
A method of judging the avalanche photodide APD optimum operating voltage of 10G EPON Download PDFInfo
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- CN109596965A CN109596965A CN201910043471.3A CN201910043471A CN109596965A CN 109596965 A CN109596965 A CN 109596965A CN 201910043471 A CN201910043471 A CN 201910043471A CN 109596965 A CN109596965 A CN 109596965A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
- G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
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Abstract
The invention discloses a kind of methods of avalanche photodide APD optimum operating voltage for judging 10G EPON, comprising the following steps: S1: obtains the breakdown reverse voltage V of APD according to the RSSI under the test data of BOSA or no light conditionbr；S2: one initial value working bias voltage of setting, fixed input optical power is selected, the current bit error rate or number of bit errors are tested by the preset duration, working bias voltage retest is increased with the step value stepping of setting later, at least 3 points of test, until the bit error rate or number of bit errors increase；S3: it is x, bit error rate y with working bias voltage, solves quadratic equation with one unknown y=ax2+ bx+c obtains tri- coefficients of a, b, c；S4: according to tri- coefficients of obtained a, b, c, extreme value is calculatedObtain corresponding APD DAC；S5: doing sensitivity test using APD DAC value, and if qualification passes through, update is into APDDAC LUK after corresponding temperature value in the APD DAC of Current Temperatures and APD DAC LUK table is subtracted each other and translate, as unqualified, fails.
Description
Technical field
The present invention relates to photodiode field more particularly to a kind of avalanche photodide APD for judging 10G EPON
The method of optimum operating voltage.
Background technique
APD is that performance boost is carried out on the basis of PIN photodiode, compares PIN photodiode, is added again after I layers
One layer of P-type material.When voltage is lower, most of voltage falls in the area PN+, and when voltage increases, width of depletion region increases, directly
The voltage that PN+ is tied just stops when being lower than avalanche breakdown voltage 5%~10%.I floor is light absorption area, and photon generates photoelectricity herein
Stream, the area PN+ be avalanche region, photoelectric current enter after high electric field effect under ionization by collision, generate secondary voids electronics pair, secondary sky
Cave again may ionization by collision again, in this way there may be tens or several hundred new hole-electron pairs, i.e. so-called times of synergy
It answers.
This structure of APD causes it to have higher sensitivity than PIN photodiode, but circuit is also more complicated, needs
Want additional high drive.Usual APD has an optimum operating voltage, smaller less than this operating voltage multiplication factor M, sensitivity
It is lower；Greater than this operating voltage, noise also amplifies while multiplication factor becomes larger, and signal-to-noise ratio is lower, and sensitivity can also decline.It is logical
Often, operating voltage, such as less than breakdown reverse voltage 3V or 0.9 times of breakdown reverse voltage are empirically set, but in special circumstances
Need to find optimal sensitive point, however there are certain deviations for empirical value and optimum value, can not be used as optimum operating voltage.
Summary of the invention
To solve the above-mentioned problems, the present invention proposes a kind of best work of avalanche photodide APD for judging 10G EPON
Make the method for voltage, which comprises the following steps: S1: according to the RSSI under the test data of BOSA or no light condition
Obtain the breakdown reverse voltage V of APDbr；S2: one initial value working bias voltage of setting selects fixed input optical power, holds by preset
Continuous the time test current bit error rate or number of bit errors, increase working bias voltage retest later with the step value stepping of setting, most
3 points are tested less, until the bit error rate or number of bit errors increase；S3: being x, the bit error rate y, Xie Yiyuan with working bias voltage
Quadratic equation y=ax2+ bx+c obtains tri- coefficients of a, b, c；S4: according to tri- coefficients of obtained a, b, c, extreme value is calculatedObtain corresponding APD DAC；S5: doing sensitivity test using APD DAC value, if qualification passes through, by Current Temperatures
APD DAC and APD DAC LUK table in corresponding temperature value subtract each other and translate after update into APDDAC LUK, as unqualified
Then fail.When being tested using driving chip, APD DAC quantization can be used and be added in working bias voltage on APD, value and voltage
It is worth proportional, passing through the different DAC value of setting can control the variable quantity of working bias voltage x.
Further, the initial value working bias voltage is Vbr- 4V, the duration are 5s, and the step value is 0.5V.According to
RSSI under no light condition obtains the breakdown reverse voltage V of APDbr, comprising the following steps: (1) use an initial bias voltage as
The operating voltage of APD need to guarantee to all APD, V0< Vbr, RX input light is set as 0, tests current RSSI, judge ID
Whether 10 μ As are reached, and such as RSSI of current circuit uses 1:1 current mirror, need to only judge the electric current for flowing into driving chip RSSI pin
Whether more than 10 μ A, operating voltage at this time is Vbr；(2) it alternatively, for specific driving chip, is defined in specifications
1LSB=0.03125 μ A/bit, then need to only judge whether RSSI ADC (F0/F1h) is greater than 0140h, if RSSI ADC
Less than 0140h, operating voltage is increased with fixed step value, until RSSI ADC reaches 0140h, work at this time is electric
Pressure is Vbr.The breakdown reverse voltage V of APD is obtained according to the test data of BOSAbr, comprising the following steps: (1) it will with AIV
The APD V of BOSAbrOccurrence, which is measured, to be come, and is imported into database；(2) V in database is called directly when debuggingbr。
Further, select the method for fixed input optical power are as follows: according to APD under different input optical powers number of bit errors or mistake
The variation tendency of code rate, select within the shorter testing time can the larger bit error rate of outlet or input optical power when number of bit errors make
For fixed input optical power.
Further, the step S2 includes following sub-step: S21: setting VmixWith VmaxIt is full as variation range bound
Sufficient Vmix<Vop<Vmax<Vbr；S22: under the conditions of fixed input optical power, bit error rate when test job voltage value is V_mix or
Number of bit errors；S23: start to increase the bias value retest bit error rate or number of bit errors by fixed value, until the bit error rate or error code count
Now increase, at least tests 3 times.In addition, if less than 3 bit error rates of the test point of step S2 increase, initial value is worked
Bias repeats step 2 after reducing 1V.
The beneficial effects of the present invention are: the present invention proposes the avalanche photodide APD of judgement 10G EPON a kind of most
The method of good operating voltage can directly and efficiently obtain the optimum operating voltage of APD in 10GEPON, guarantee that optical device has
Optimum sensitivity.
Detailed description of the invention
Fig. 1 is the method flow diagram for judging the avalanche photodide APD optimum operating voltage of 10G EPON；
Fig. 2 be when input optical power is arranged excessive with the relationship of bias Vr；
Fig. 3 is the number of bit errors tested under the 10GEPON difference bit error rate 1 second；
Fig. 4 is a kind of optical device variation tendency of number of bit errors or the bit error rate under different input optical powers；
Fig. 5 is the corresponding error rate BER of different bias Vr；
Fig. 6 is that lowest bit error rate and original value are set.
Specific embodiment
It is with reference to the accompanying drawing and specific real in order to make those skilled in the art more fully understand technical solution of the present invention
Applying example, the present invention is described in further detail.
A method of judging the avalanche photodide APD optimum operating voltage of 10G EPON, comprising the following steps:
S1: the breakdown reverse voltage V of APD is obtained according to the RSSI under the test data of BOSA or no light conditionbr；S2: at the beginning of setting one
Be worth working bias voltage, select fixed input optical power, the current bit error rate or number of bit errors are tested by the preset duration, later with
The step value stepping of setting increases working bias voltage retest, 3 points is at least tested, until the bit error rate or number of bit errors increase
Until；S3: it is x, bit error rate y with working bias voltage, solves quadratic equation with one unknown y=ax2+ bx+c obtains tri- coefficients of a, b, c；
S4: according to tri- coefficients of obtained a, b, c, extreme value is calculatedObtain corresponding APD DAC；S5: APD DAC value is utilized
Do sensitivity test, if qualification passes through, corresponding temperature value in the APD DAC of Current Temperatures and APD DAC LUK table is subtracted each other and
It updates after translation into APDDAC LUK, as unqualified, fails.When being tested using driving chip, APD DAC can be used
Quantization is added in working bias voltage on APD, and value is proportional with voltage value, can control work inclined by setting different DAC values
Press the variable quantity of x.
In general, actual measurement is to test APD dark current under unglazed input condition to be approximately considered this as ID >=10uA
When bias be Vbr.Use an initial bias voltage as the operating voltage of APD, V is guaranteed to all APDop<Vbr.RX is defeated
Enter light and be set as 0, test current RSSI, judges whether to reach 10 μ A.If the RSSI of the present embodiment uses 1:1 current mirror, only
The electric current for flowing into driving chip RSSI pin need to be judged whether more than 10 μ A.The definition of driving chip used in the present embodiment
1LSB=0.03125 μ A/bit, therefore need to only judge whether RSSI ADC (F0/F1h) is greater than 0140h.In addition, there are also a kind of
Method is first with AIV by the APDV of BOSAbrOccurrence measure, imported into database, when debugging calls directly database
In Vbr.The V that such method obtainsbrMay be deviated with true value because the test environment temperature of BOSA and light cat can
Can be inconsistent, but because BOSA and light cat are all room temperature tests, error is smaller, obtains VbrIt is intended merely to obtain a upper limit model
It encloses, it is not required that very high accuracy.
Input optical power need to select desired value, it is excessive or it is too small cannot all find right value, as shown in Fig. 2, input light function
Rate setting is excessive, and leading to the bit error rate between A~B point is all 0, is unable to find it correctly optimum sensitivity.Input optical power setting is too small,
The bit error rate that then will lead under each bias Vr is all very big, and the size of the bit error rate cannot be distinguished.
10GEPON receiving velocity is 10Gbps, tests 1 second number of bit errors as shown in figure 3, minimum error code under each bit error rate
Rate is set as 1*10-8~1*10-7Left and right, then running 5S has 500~5000 error codes, being capable of outlet within the shorter testing time
The larger bit error rate or number of bit errors.The variation tendency of number of bit errors or the bit error rate, selection under different input optical powers according to optical device
Within the shorter testing time can the larger bit error rate of outlet or input optical power when number of bit errors as fixed input optical power.Such as
Fig. 4 be certain optical device variation tendency of number of bit errors or the bit error rate under different input optical powers, it is known that select -31dBm as
Fixed input optical power is tested, and can reach the bit error rate is 1*10-8~1*10-7Left and right.
Under the conditions of fixed input optical power, the relationship of error rate BER and bias Vr is tested, comprising the following steps: setting
VmixWith VmaxAs variation range bound, meet Vmix<Vop<Vmax<Vbr；Under the conditions of fixed input optical power, work is tested
Making voltage value is VmixWhen the bit error rate or number of bit errors；Start by fixed value such as 0.5V increase the bias value retest bit error rate or
Number of bit errors is at least tested 3 times until the bit error rate or number of bit errors increase；When testing time is less than 3, the bit error rate or error code
Existing increase is counted, by VmixS32 is repeated after reducing 1V.Obtain the data of error rate BER and bias Vr as shown in Figure 5.
Further, optimum operating voltage V is calculated according to obtained dataop, different with approximate One- place 2-th Order function representation
The corresponding error rate BER of bias Vr, as shown in Figure 6.Establish One- place 2-th Order function model y=ax2+ bx+c, by the data obtained
Operating voltage value is as X-coordinate, and the bit error rate or number of bit errors are as Y-coordinate；The value of a, b and c are calculated according to the data obtained；Y is most
Dot is extreme point, at this time its derivative be 0, i.e. 2ax+b=0, thenThe x value of extreme point coordinate is found out, as most preferably
Operating voltage Vop.Specific calculating process can optimize according to the actual situation, as coefficient is too small lead to loss of significance if can be counted in centre
Diminution is amplified during calculating.
The above disclosure is only the preferred embodiments of the present invention, cannot limit the right model of the present invention with this certainly
It encloses, therefore equivalent changes made in accordance with the claims of the present invention, is still within the scope of the present invention.
Claims (9)
1. it is a kind of judge 10G EPON avalanche photodide APD optimum operating voltage method, which is characterized in that including with
Lower step:
S1: the breakdown reverse voltage V of APD is obtained according to the RSSI under the test data of BOSA or no light conditionbr；
S2: one initial value working bias voltage of setting selects fixed input optical power, current error code is tested by the preset duration
Rate or number of bit errors increase working bias voltage retest later with the step value stepping of setting, 3 points are at least tested, until error code
Until increasing occur in rate or number of bit errors；；
S3: it is x, bit error rate y with working bias voltage, solves quadratic equation with one unknown y=ax2+ bx+c obtains tri- coefficients of a, b, c；
S4: according to tri- coefficients of obtained a, b, c, extreme value x=-b/2a is calculated, corresponding APD DAC is obtained；
S5: doing sensitivity test using APD DAC value, if qualification passes through, by the APD DAC of Current Temperatures and APD DAC LUK
It updates after corresponding temperature value is subtracted each other and translated in table into APD DAC LUK, as unqualified, fails.
2. a kind of side of avalanche photodide APD optimum operating voltage for judging 10G EPON according to claim 1
Method, which is characterized in that the initial value working bias voltage is Vbr-4V。
3. a kind of side of avalanche photodide APD optimum operating voltage for judging 10G EPON according to claim 1
Method, which is characterized in that the duration is 5s.
4. a kind of side of avalanche photodide APD optimum operating voltage for judging 10G EPON according to claim 1
Method, which is characterized in that the step value is 0.5V.
5. a kind of side of avalanche photodide APD optimum operating voltage for judging 10G EPON according to claim 1
Method, which is characterized in that the breakdown reverse voltage V of APD is obtained according to the RSSI under no light conditionbr, comprising the following steps:
(1) an initial bias voltage V is used0As the operating voltage of APD, need to guarantee to all APD, V0< Vbr, RX input light
It is set as 0, current RSSI is tested, judges IDWhether 10 μ As are reached, and such as RSSI of current circuit uses 1:1 current mirror, only needs
Whether the electric current for flowing into driving chip RSSI pin is judged more than 10 μ A, and operating voltage at this time is Vbr；
(2) alternatively, for specific driving chip, 1LSB=0.03125 μ A/bit is defined in specifications, then need to only judge RSSI
Whether ADC (F0/F1h) is greater than 0140h, if RSSI ADC is less than 0140h, increases work electricity with fixed step value
Pressure, until RSSI ADC reaches 0140h, operating voltage at this time is Vbr。
6. a kind of side of avalanche photodide APD optimum operating voltage for judging 10G EPON according to claim 1
Method, which is characterized in that the breakdown reverse voltage V of APD is obtained according to the test data of BOSAbr, comprising the following steps:
(1) with AIV by the APD V of BOSAbrOccurrence, which is measured, to be come, and is imported into database；
(2) V in database is called directly when debuggingbr。
7. a kind of side of avalanche photodide APD optimum operating voltage for judging 10G EPON according to claim 1
Method, which is characterized in that the method for selecting fixed input optical power are as follows: according to APD under different input optical powers number of bit errors or mistake
The variation tendency of code rate, select within the shorter testing time can the larger bit error rate of outlet or input optical power when number of bit errors make
For fixed input optical power.
8. a kind of side of avalanche photodide APD optimum operating voltage for judging 10G EPON according to claim 1
Method, which is characterized in that the step S2 includes following sub-step:
S21: setting VmixWith VmaxAs variation range bound, meet Vmix<Vop<Vmax<Vbr；
S22: under the conditions of fixed input optical power, test job voltage value is VmixWhen the bit error rate or number of bit errors；
S23: start to increase the bias value retest bit error rate or number of bit errors by fixed value, until the bit error rate or number of bit errors increase
Greatly, it at least tests 3 times.
9. a kind of side of avalanche photodide APD optimum operating voltage for judging 10G EPON according to claim 1
Method, which is characterized in that if less than 3 bit error rates of the test point of step S2 increase, initial value working bias voltage is reduced into 1V
Step 2 is repeated afterwards.
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| CN110488174A (en) * | 2019-08-26 | 2019-11-22 | 上海禾赛光电科技有限公司 | The breakdown voltage of photodiode is tested |
| CN111385023A (en) * | 2020-03-02 | 2020-07-07 | 成都优博创通信技术股份有限公司 | Optical module debugging device and debugging method |
| CN111398669A (en) * | 2020-04-13 | 2020-07-10 | 武汉光谷信息光电子创新中心有限公司 | Working voltage testing method, device, equipment and storage medium |
| CN112461506A (en) * | 2021-01-28 | 2021-03-09 | 深圳市迅特通信技术股份有限公司 | Automatic test circuit for multipath APD and PIN light receiving device |
| CN112865863A (en) * | 2020-12-31 | 2021-05-28 | 武汉欣向宜电子技术有限公司 | Multi-channel optical modem debugging and testing system and debugging and testing method thereof |
| CN113358992A (en) * | 2021-05-12 | 2021-09-07 | 武汉光谷量子技术有限公司 | Method for acquiring critical parameters of avalanche diode |
| CN114050864A (en) * | 2021-11-11 | 2022-02-15 | 四川天邑康和通信股份有限公司 | XGSPON optical module-based rapid debugging method for optical indexes of receiving and transmitting end |
| CN114389686A (en) * | 2022-01-11 | 2022-04-22 | 微网优联科技(成都)有限公司 | Calculation system and method for BOSA APD lookup table |
| CN114384392A (en) * | 2022-03-24 | 2022-04-22 | 成都明夷电子科技有限公司 | Method for rapidly debugging APD bias voltage in optical module production |
| CN114814517A (en) * | 2022-06-27 | 2022-07-29 | 杭州宇称电子技术有限公司 | Method for measuring SPAD single-point avalanche voltage in chip and application thereof |
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| CN111385023A (en) * | 2020-03-02 | 2020-07-07 | 成都优博创通信技术股份有限公司 | Optical module debugging device and debugging method |
| CN111398669A (en) * | 2020-04-13 | 2020-07-10 | 武汉光谷信息光电子创新中心有限公司 | Working voltage testing method, device, equipment and storage medium |
| CN112865863A (en) * | 2020-12-31 | 2021-05-28 | 武汉欣向宜电子技术有限公司 | Multi-channel optical modem debugging and testing system and debugging and testing method thereof |
| CN112461506A (en) * | 2021-01-28 | 2021-03-09 | 深圳市迅特通信技术股份有限公司 | Automatic test circuit for multipath APD and PIN light receiving device |
| CN112461506B (en) * | 2021-01-28 | 2021-06-08 | 深圳市迅特通信技术股份有限公司 | Automatic test circuit for multipath APD and PIN light receiving device |
| CN113358992A (en) * | 2021-05-12 | 2021-09-07 | 武汉光谷量子技术有限公司 | Method for acquiring critical parameters of avalanche diode |
| CN114050864A (en) * | 2021-11-11 | 2022-02-15 | 四川天邑康和通信股份有限公司 | XGSPON optical module-based rapid debugging method for optical indexes of receiving and transmitting end |
| CN114050864B (en) * | 2021-11-11 | 2022-11-18 | 四川天邑康和通信股份有限公司 | XGSPON optical module-based rapid debugging method for optical indexes of receiving and transmitting end |
| CN114389686A (en) * | 2022-01-11 | 2022-04-22 | 微网优联科技(成都)有限公司 | Calculation system and method for BOSA APD lookup table |
| CN114389686B (en) * | 2022-01-11 | 2024-05-03 | 微网优联科技(成都)有限公司 | Computing system and method for BOSA APD lookup table |
| CN114384392A (en) * | 2022-03-24 | 2022-04-22 | 成都明夷电子科技有限公司 | Method for rapidly debugging APD bias voltage in optical module production |
| CN114384392B (en) * | 2022-03-24 | 2022-06-14 | 成都明夷电子科技有限公司 | Method for rapidly debugging APD bias voltage in optical module production |
| CN114814517A (en) * | 2022-06-27 | 2022-07-29 | 杭州宇称电子技术有限公司 | Method for measuring SPAD single-point avalanche voltage in chip and application thereof |
| CN114814517B (en) * | 2022-06-27 | 2022-09-13 | 杭州宇称电子技术有限公司 | Method for measuring SPAD single-point avalanche voltage in chip and application thereof |
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