CN109590820A - The processing method of superhard laser crystal surface roughness - Google Patents
The processing method of superhard laser crystal surface roughness Download PDFInfo
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- CN109590820A CN109590820A CN201910000512.0A CN201910000512A CN109590820A CN 109590820 A CN109590820 A CN 109590820A CN 201910000512 A CN201910000512 A CN 201910000512A CN 109590820 A CN109590820 A CN 109590820A
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- surface roughness
- polishing
- superhard
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- abrasive material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
A kind of superhard laser crystal surface roughness processing method, this method include that grinding, rough polishing and accurate ring are thrown.The method of the present invention grinds the stock removal of stage each process, fundamentally removes subsurface defect by the detection of abrasive size, strict control；Auxiliary agent is polished by being added, polishing fluid is set to obtain dispersion and lubrication more evenly, to effectively control the generation of surface/subsurface defect, the surface roughness for substantially increasing superhard laser crystal is that two, 125mm × 6mm × 6mm and 133mm × 33mm × 3mm Nd:YAG crystal big surface roughness reach 0.3nm for specification.
Description
Technical field
The present invention relates to laser crystals, and field, especially a kind of processing side of superhard laser crystal surface roughness is cold worked
Method.
Background technique
As the core work element of high-power strip laser, slab laser crystal element has high transparency, uniformly
Superior optics, the both mechanically and thermally characteristics such as refractive index, low laser threshold, impact resistance, be still it is current it is most important, using most
Extensive solid-state laser operation material, is largely used in military affairs, scientific research, medical treatment and industrial laser, is needing high power, height
The occasions such as energy, switch and mode-locked ultrashort pulse laser, even more preferred working-laser material.
Slab laser crystal pro cessing precision directly influences the output beam quality of laser, as slab laser exports
The continuous promotion of power requirement, the geometric dimension of required lath is increasing, and difficulty of processing and quality requirement are also higher and higher.It is right
In typical hard crisp difficult worked crystal, such as Nd:YAG crystal, Mohs' hardness reaches 8.5, the elastic limit and intensity of this kind of material
The limit is very close, and rupture failure will occur when the load that material is born is slightly exceeding elastic limit, and finished surface holds
It is also easy to produce micro-crack and pit, seriously affects its surface quality and performance.Its crystal structure category carbuncle type, be in nature only
Inferior to diamond, the third-largest hard brittle material of cubic boron nitride, therefore it is more more tired than general optical material to process this crystal
It is difficult.
For the high surface roughness optical manufacturing of superhard laser crystal material, current reported processing method both at home and abroad
It is to select diamond or alumina powder abrasive material to carry out using polished dies such as pitch, polyurethane or pure tins on lapping and buffing machine mostly
Hand polish or uniaxial machine polishing.Since superhard crystal and processing auxiliary material Mohs' hardness are 8 or more, are grinding and polishing
Surface and subsurface defect are easily generated in the process, and are difficult to remove.Existing various processes still can not be fully solved
The high surface roughness of slab crystal element effectively controls, and realizes that the high surface roughness processing and manufacturing of the class component is still relatively difficult.
Summary of the invention
The object of the present invention is to provide a kind of processing method of superhard laser crystal surface roughness, this method passes through abrasive material
The detection of partial size, strict control grind the stock removal of stage each process, fundamentally remove subsurface defect；It is polished by being added
Auxiliary agent makes polishing fluid obtain dispersion and lubrication more evenly, to effectively control the generation of surface/subsurface defect, mentions significantly
The high surface roughness of superhard laser crystal, realizes the high surface roughness processing of superhard laser crystal.
Technical solution of the invention is as follows:
A kind of superhard laser crystal surface roughness processing method, it is characterized in that method includes the following steps:
1) partial size of four kinds of specification abrasive materials of detection grinding, records 180#/240#/320#/500# abrasive material maximum particle diameter；
2) use 180# abrasive material, crystal element is ground using uniaxial machine, remove 1-2mm, then respectively with 240#,
320#, 500# abrasive material successively grind crystal element, and the removal amount of rear one of abrasive lapping is at least preceding one of abrasive material most
Large-sized 2 times, after 500# abrasive lapping, ultrasonic cleaning, using contact pin type contourgraph detecting element surface, if surface is thick
Rugosity is less than 20nm, then enters the next step；If surface roughness is greater than 20nm, continue grind with 500# abrasive material straight
It is less than 20nm to surface roughness；
3) the polishing auxiliary agent of 1~5% volume ratio is added in polishing fluid, ultrasonic mixing constitutes mixed polishing solution uniformly with right
Crystal element is polished, and is carried out fast polishing to crystal element first with uniaxial machine, is detected after ultrasonic cleaning, until surface
Roughness is less than 10nm, then carries out accurate annular polishing to crystal element using glass polishing machine, detects after ultrasonic cleaning, until table
Surface roughness is less than 0.3nm.
4) completion of processing.
Abradant abrasive material includes silicon carbide, diamond dust, boron carbide in the step 1) and step 2)；
Polishing fluid is aluminum oxide polishing powder, diadust in the step 3), and median is respectively less than 1 micron；Polishing
Auxiliary agent is sodium dichromate；
Technical effect of the invention is as follows:
The present invention is ground the stock removal of stage each process, is fundamentally removed by the detection of abrasive size, strict control
Subsurface defect；By be added polish auxiliary agent, so that polishing fluid is obtained dispersion and lubrication more evenly, thus effectively control surface/
The generation of subsurface defect substantially increases the surface roughness of superhard laser crystal, is 128mm × 6mm × 6mm for specification
And two, 133mm × 33mm × 3mm Nd:YAG crystal big surface roughness are less than 0.3nm.
Specific embodiment
It elaborates, but should not be limited the scope of the invention with this to the present invention below.
Embodiment 1
A kind of superhard laser crystal surface roughness processing method, the present embodiment processing object are that specification is 128mm × 6mm
× 6mm Nd:YAG slab crystal, it is desirable that the big surface roughness of 128mm × 6mm is less than 0.3nm, and this method includes the following steps:
1) partial size of four kinds of specification silicon carbide of detection grinding, records 180#/240#/320#/500# silicon carbide maximum
Partial size, 100 μm of 180# silicon carbide maximum particle diameter, 70 μm of 240# silicon carbide maximum particle diameter, 50 μm of 320# silicon carbide maximum particle diameter,
25 μm of 500# silicon carbide partial size；
2) crystal element is ground using uniaxial machine, after removing 1mm using 180# silicon carbide, using 240# silicon carbide
Grinding removal 0.3mm, grinds removal 0.2mm using 320# silicon carbide, grinds removal 0.15mm using 500# silicon carbide, ultrasound is clear
It washes, using contact pin type contourgraph detecting element surface, if surface roughness is less than 20nm, enters the next step；If surface
Roughness is greater than 20nm, then continues to carry out grinding with 500# silicon carbide until surface roughness is less than 20nm；
3) sodium dichromate of 2% volume ratio, ultrasonic mixing are added in the alumina polishing solution to median less than 1 micron
Mixed polishing solution is uniformly constituted, fast polishing is carried out to crystal element first with uniaxial machine, is detected after ultrasonic cleaning, until table
Surface roughness is less than 10nm, then carries out accurate annular polishing to crystal element using glass polishing machine, detects after ultrasonic cleaning, until
Surface roughness is less than 0.3nm；
4) completion of processing.
Embodiment 2
A kind of superhard laser crystal surface roughness processing method, the present embodiment processing object be specification be 133mm ×
33mm × 3mm Nd:YAG slab crystal, it is desirable that the big surface roughness of 133mm × 33mm is less than 0.3nm, and this method includes following
Step:
1) partial size of four kinds of specification boron carbides of detection grinding, records 180#/240#/320#/500# boron carbide maximum
Partial size, 80 μm of 180# boron carbide maximum particle diameter, 63 μm of 240# boron carbide maximum particle diameter, 45 μm of 320# boron carbide maximum particle diameter,
20 μm of 500# boron carbide partial size；
2) crystal element is ground using uniaxial machine, after removing 2mm using 180# boron carbide, using 240# boron carbide
Grinding removal 0.3mm, removes 0.2mm using 320# carbonization abrading with boron, removes 0.15mm using 500# carbonization abrading with boron, ultrasound is clear
It washes, using contact pin type contourgraph detecting element surface, if surface roughness is less than 20nm, enters the next step；If surface
Roughness is greater than 20nm, then continues to carry out grinding with 500# silicon carbide until surface roughness is less than 20nm；
3) sodium dichromate of 3% volume ratio is added in the diadust polishing fluid to median less than 1 micron, ultrasound
It is uniformly mixed and constitutes mixed polishing solution, fast polishing is carried out to crystal element first with uniaxial machine, is detected after ultrasonic cleaning, directly
It is less than 10nm to surface roughness, accurate annular polishing then is carried out to crystal element using glass polishing machine, is detected after ultrasonic cleaning,
Until surface roughness is less than 0.3nm；
4) completion of processing.
Test of many times shows: detection of the present invention by abrasive size, the stock removal of strict control grinding stage each process,
Fundamentally remove subsurface defect；Auxiliary agent is polished by being added, so that polishing fluid is obtained dispersion and lubrication more evenly, to have
Effect control surface/subsurface defect generation, substantially increases the surface roughness of superhard laser crystal, is for specification
The surface roughness in two, 125mm × 6mm × 6mm and 133mm × 33mm × 3mm Nd:YAG crystal big faces is respectively less than 0.3nm.
Claims (3)
1. a kind of superhard laser crystal surface roughness processing method, it is characterised in that method includes the following steps:
1) partial size of four kinds of specification abrasive materials of detection grinding, records 180#/240#/320#/500# abrasive material maximum particle diameter；
2) use 180# abrasive material, crystal element is ground using uniaxial machine, remove 1-2mm, then respectively with 240#,
320#, 500# abrasive material successively grind crystal element, and the removal amount of rear one of abrasive lapping is at least preceding one of abrasive material most
Large-sized 2 times, after 500# abrasive lapping, ultrasonic cleaning, using contact pin type contourgraph detecting element surface, if surface is thick
Rugosity is less than 20nm, then enters the next step；If surface roughness is greater than 20nm, continue grind with 500# abrasive material straight
It is less than 20nm to surface roughness；
3) the polishing auxiliary agent of 1~5% volume ratio is added in polishing fluid, ultrasonic mixing uniformly constitutes mixed polishing solution to crystal
Element is polished, and is carried out fast polishing to crystal element first with uniaxial machine, is detected after ultrasonic cleaning, until rough surface
Degree is less than 10nm, then carries out accurate annular polishing to crystal element using glass polishing machine, detects after ultrasonic cleaning, until surface is thick
Rugosity is less than 0.3nm.
2. superhard laser crystal surface roughness processing method according to claim 1, which is characterized in that the step 1)
It is silicon carbide, diamond dust or boron carbide with abrasive material abradant in step 2).
3. superhard laser crystal surface roughness processing method according to claim 1 or 2, which is characterized in that the step
It is rapid 3) in polishing fluid be aluminum oxide polishing powder polishing fluid or diadust polishing fluid, median is respectively less than 1 micron；Described
Polishing auxiliary agent is sodium dichromate.
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| CN201910000512.0A CN109590820B (en) | 2019-01-02 | 2019-01-02 | Method for processing surface roughness of superhard laser crystal |
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| CN201910000512.0A CN109590820B (en) | 2019-01-02 | 2019-01-02 | Method for processing surface roughness of superhard laser crystal |
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| CN109590820B CN109590820B (en) | 2021-07-06 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110183972A (en) * | 2019-07-02 | 2019-08-30 | 成都东骏激光股份有限公司 | A kind of acid polishing slurry and its application in the YAG series material for obtaining super-smooth surface |
| CN110977622A (en) * | 2019-12-13 | 2020-04-10 | 大连理工大学 | Control method for multipoint variable-position automatic dropping of polishing solution |
| CN113878411A (en) * | 2021-11-12 | 2022-01-04 | 陕西金信天钛材料科技有限公司 | Positioning fixture for rotary polishing of R surface of sliding blade of compressor and polishing method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1579706A (en) * | 2003-08-08 | 2005-02-16 | 花王株式会社 | Substrate for magnetic disc |
| US20080194183A1 (en) * | 2007-02-08 | 2008-08-14 | Sony Corporation | Planarization polishing method and method for manufacturing semiconductor device |
| CN101249625A (en) * | 2008-03-21 | 2008-08-27 | 中国科学院上海光学精密机械研究所 | Laser glass mechanical chemical polishing method |
| CN101423746A (en) * | 2007-10-29 | 2009-05-06 | 花王株式会社 | Polishing composition for hard disk substrate |
| CN101981665A (en) * | 2008-03-24 | 2011-02-23 | 株式会社Adeka | Colloidal silica with modified surface and polishing composition for CMP containing the same |
| CN103231302A (en) * | 2013-04-12 | 2013-08-07 | 同济大学 | Method for obtaining super-smooth surface low-sub-surface-damage crystal |
| CN108818157A (en) * | 2018-06-20 | 2018-11-16 | 天津大学 | A kind of Nd:GGG crystrallographic plane optical element high-efficiency low-damage processing method |
-
2019
- 2019-01-02 CN CN201910000512.0A patent/CN109590820B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1579706A (en) * | 2003-08-08 | 2005-02-16 | 花王株式会社 | Substrate for magnetic disc |
| US20080194183A1 (en) * | 2007-02-08 | 2008-08-14 | Sony Corporation | Planarization polishing method and method for manufacturing semiconductor device |
| CN101423746A (en) * | 2007-10-29 | 2009-05-06 | 花王株式会社 | Polishing composition for hard disk substrate |
| CN101249625A (en) * | 2008-03-21 | 2008-08-27 | 中国科学院上海光学精密机械研究所 | Laser glass mechanical chemical polishing method |
| CN101981665A (en) * | 2008-03-24 | 2011-02-23 | 株式会社Adeka | Colloidal silica with modified surface and polishing composition for CMP containing the same |
| CN103231302A (en) * | 2013-04-12 | 2013-08-07 | 同济大学 | Method for obtaining super-smooth surface low-sub-surface-damage crystal |
| CN108818157A (en) * | 2018-06-20 | 2018-11-16 | 天津大学 | A kind of Nd:GGG crystrallographic plane optical element high-efficiency low-damage processing method |
Non-Patent Citations (1)
| Title |
|---|
| 沈冯峰 等: "Yb∶LuScO3晶体的超精密光学加工及其激光性能", 《光学精密工程》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110183972A (en) * | 2019-07-02 | 2019-08-30 | 成都东骏激光股份有限公司 | A kind of acid polishing slurry and its application in the YAG series material for obtaining super-smooth surface |
| CN110183972B (en) * | 2019-07-02 | 2021-02-02 | 成都东骏激光股份有限公司 | Acidic polishing solution and application thereof in obtaining YAG series materials with ultra-smooth surfaces |
| CN110977622A (en) * | 2019-12-13 | 2020-04-10 | 大连理工大学 | Control method for multipoint variable-position automatic dropping of polishing solution |
| CN110977622B (en) * | 2019-12-13 | 2021-04-02 | 大连理工大学 | Control method for multipoint variable-position automatic dropping of polishing solution |
| CN113878411A (en) * | 2021-11-12 | 2022-01-04 | 陕西金信天钛材料科技有限公司 | Positioning fixture for rotary polishing of R surface of sliding blade of compressor and polishing method thereof |
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| CN109590820B (en) | 2021-07-06 |
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