CN109586042B - Wave absorber and preparation method thereof - Google Patents

Wave absorber and preparation method thereof Download PDF

Info

Publication number
CN109586042B
CN109586042B CN201811465647.6A CN201811465647A CN109586042B CN 109586042 B CN109586042 B CN 109586042B CN 201811465647 A CN201811465647 A CN 201811465647A CN 109586042 B CN109586042 B CN 109586042B
Authority
CN
China
Prior art keywords
layer
metal
graphene
metal grating
grating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811465647.6A
Other languages
Chinese (zh)
Other versions
CN109586042A (en
Inventor
陆亚林
黄秋萍
赵毅
林晓霞
何泓川
杨萌萌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Science and Technology of China USTC
Original Assignee
University of Science and Technology of China USTC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Science and Technology of China USTC filed Critical University of Science and Technology of China USTC
Priority to CN201811465647.6A priority Critical patent/CN109586042B/en
Publication of CN109586042A publication Critical patent/CN109586042A/en
Application granted granted Critical
Publication of CN109586042B publication Critical patent/CN109586042B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q17/00Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
    • H01Q17/007Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems with means for controlling the absorption
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices

Abstract

The invention provides a wave absorber and a preparation method thereof, and the wave absorber comprises a substrate, and a first metal electrode, a first metal grating layer, a first medium layer, a graphene hyperbolic layer, a second medium layer and a second metal grating layer which are sequentially arranged on the substrate; the graphene hyperbolic layer comprises a plurality of graphene layers and a third medium layer which are alternately arranged; the second metal grating layer and the first metal grating layer are both two-dimensional square periodic arrays, and the period of the second metal grating layer is different from that of the first metal grating layer. The first metal grating layer and the second metal grating layer respectively provide wave vector compensation, surface plasmons of the graphene hyperbolic layer are excited, and incident electromagnetic waves are localized in the graphene hyperbolic layer with high loss, so that the electromagnetic waves with certain wavelengths can be completely absorbed. In addition, because the periods of the first metal grating layer and the second metal grating layer are different, two plasmon waves with different wavelengths can be excited, and further perfect absorption of double wavelengths can be realized.

Description

Wave absorber and preparation method thereof
Technical Field
The invention relates to the technical field of wave absorbers, in particular to a wave absorber and a preparation method thereof.
Background
A Perfect Absorber (PMA) is a device that can completely absorb electromagnetic waves. Because the metamaterial has extraordinary physical properties which are not possessed by natural materials, and the perfect wave absorber designed by utilizing the metamaterial has the advantages of high absorptivity, thin thickness and the like, the perfect wave absorber made of the metamaterial has attracted extensive attention of people.
In order to solve the problem of fixed absorption peak of the early metamaterial perfect wave absorber, researchers design some perfect wave absorbers based on active control materials such as graphene, vanadium dioxide and the like. Since graphene has excellent photoelectric characteristics and the fermi level can be controlled by chemical doping, gate voltage and other modes, a perfect wave absorber prepared by using the graphene material is widely applied.
However, in the current perfect wave absorber based on graphene materials, the used graphene is only a single layer or a few layers of graphene thin films or graphene micro-nano structure arrays, which results in a low electromagnetic wave absorption rate of the perfect wave absorber.
Disclosure of Invention
In view of this, the invention provides a wave absorber and a preparation method thereof, so as to solve the problem of low electromagnetic wave absorption rate of the existing wave absorber.
In order to achieve the purpose, the invention provides the following technical scheme:
a wave absorber comprises a substrate, and a first metal electrode, a first metal grating layer, a first medium layer, a graphene hyperbolic layer, a second medium layer and a second metal grating layer which are sequentially arranged on the substrate;
the graphene hyperbolic layer comprises a plurality of graphene layers and a third medium layer which are alternately arranged;
the second metal grating layer and the first metal grating layer are both two-dimensional square periodic arrays, and the period of the second metal grating layer is different from that of the first metal grating layer.
Optionally, the device further comprises a second metal electrode and a voltage control circuit;
the second metal electrode wraps the side face of the graphene hyperbolic layer;
and the voltage control circuit is connected with the first metal electrode and the second metal electrode and is used for changing the absorption peak of the wave absorber through voltage regulation.
Optionally, the number of graphene layers and the third medium layer is greater than or equal to 3 and less than or equal to 20.
Optionally, a period of the first metal grating layer is twice a period of the second metal grating layer.
Optionally, the period of the first metal grating layer is 500nm-50 μm;
the period of the second metal grating layer is 500nm-50 μm.
Optionally, the material of the dielectric layer includes silicon dioxide, aluminum oxide, polyimide resin and magnesium fluoride.
Optionally, the material of the first metal grating layer comprises gold, silver, platinum, aluminum and copper;
the material of the second metal grating layer comprises gold, silver, platinum, aluminum and copper;
the material of the first metal electrode and the second metal electrode includes gold, silver, platinum, aluminum, and copper.
A method of making a wave absorber, comprising:
providing a substrate;
forming a first metal layer on the substrate, and partially etching the first metal layer to form a first metal electrode and a first metal grating layer on the surface of the first metal electrode, wherein the first metal grating layer is a two-dimensional square periodic array;
forming a first medium layer on the surface of the first metal grating layer;
forming a graphene hyperbolic layer on the surface of the first dielectric layer, wherein the graphene hyperbolic layer comprises a plurality of graphene layers and a third dielectric layer which are alternately arranged;
forming a second dielectric layer on the surface of the graphene hyperbolic layer;
and forming a second metal layer on the surface of the second medium layer, and etching the second metal layer to form a second metal grating layer, wherein the second metal grating layer is a two-dimensional square periodic array, and the period of the second metal grating layer is different from that of the first metal grating layer.
Optionally, the method further comprises:
forming a second metal electrode wrapping the graphene hyperbolic layer;
and forming a voltage control circuit connected with the first metal electrode and the second metal electrode so as to change the absorption peak of the wave absorber through voltage regulation.
Optionally, the forming of the graphene hyperbolic layer on the surface of the first dielectric layer includes:
and transferring the graphene layer and depositing the third medium layer by adopting a PMMA technology.
Compared with the prior art, the technical scheme provided by the invention has the following advantages:
according to the wave absorber and the preparation method thereof provided by the invention, the first metal grating layer and the second metal grating layer respectively provide wave vector compensation to excite the surface plasmon of the graphene hyperbolic layer and localize the incident electromagnetic wave in the graphene hyperbolic layer with high loss, so that the electromagnetic wave with certain wavelength can be completely absorbed, and the electromagnetic wave absorption rate of the wave absorber is higher. In addition, because the periods of the first metal grating layer and the second metal grating layer are different, two plasmon waves with different wavelengths can be excited, so that perfect absorption of double wavelengths can be realized, and the electromagnetic wave absorption rate of the wave absorber is further improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a wave absorber provided in an embodiment of the present invention;
fig. 2 is a top view of a first metal grating layer according to an embodiment of the present invention;
fig. 3 is a top view of a second metal grating layer according to an embodiment of the present invention;
fig. 4 is a schematic structural parameter diagram of a wave absorber provided in an embodiment of the present invention;
FIG. 5 is a diagram illustrating the results of electromagnetic finite element analysis of a wave absorber provided in an embodiment of the present invention;
FIG. 6 is a schematic diagram of an absorption peak of the wave absorber according to the embodiment of the present invention;
fig. 7 is a flowchart of a method for manufacturing a wave absorber according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, so that the above is the core idea of the present invention, and the above objects, features and advantages of the present invention can be more clearly understood. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a wave absorber for absorbing electromagnetic waves, which is applied to the technical fields of radars, photoelectric detection and the like. As shown in fig. 1, the wave absorber provided in the embodiment of the present invention includes a substrate 10, and a first metal electrode 11, a first metal grating layer 12, a first dielectric layer 13, a graphene hyperbolic layer 14, a second dielectric layer 15, and a second metal grating layer 16, which are sequentially located on the substrate 10.
The graphene hyperbolic layer 14 includes a plurality of graphene layers 140 and a third dielectric layer 141 alternately arranged in multiple layers. Optionally, the graphene layer 140 is N-type doped graphene, P-type doped graphene, or intrinsic graphene. The second metal grating layer 16 and the first metal grating layer 12 are both two-dimensional square periodic arrays, and the period of the second metal grating layer 16 is different from that of the first metal grating layer 12.
In the embodiment of the present invention, the first metal grating layer 12 and the second metal grating layer 16 respectively provide wave vector compensation, excite the surface plasmon of the graphene hyperbolic layer 14, and localize the incident electromagnetic wave in the graphene hyperbolic layer 14 with high loss, so that the electromagnetic wave with certain wavelength can be completely absorbed, and the absorption rate of the wave absorber is high. In addition, because the periods of the first metal grating layer 12 and the second metal grating layer 16 are different, two plasmon waves with different wavelengths can be excited, so that perfect absorption of dual wavelengths can be realized, and the electromagnetic wave absorption rate of the wave absorber is further improved.
Further, the wave absorber provided by the embodiment of the present invention further includes a second metal electrode and a voltage control circuit (not shown in the figure). The second metal electrode wraps the side face of the graphene hyperbolic layer 14; the voltage control circuit is connected with the first metal electrode 11 and the second metal electrode and is used for changing the absorption peak of the wave absorber through voltage regulation. Alternatively, the voltage control circuit includes a voltage source and a control circuit, and the like.
Since the characteristics of the graphene hyperbolic layer 14 are also changed when the fermi level of the graphene is changed, the surface plasmon resonance peaks excited by the first metal grating layer and the second metal grating layer are also changed, that is, the position of the absorption peak of the wave absorber is also changed. Since the fermi level (corresponding conductance) of the graphene can be adjusted by the external voltage, in the embodiment of the invention, the external voltage of the graphene hyperbolic layer 14 is changed by the voltage control circuit, so that the absorption peak of the wave absorber is changed along with the modulation of the external voltage, and the wave absorber can absorb electromagnetic waves with different wavelengths. In addition, the graphene hyperbolic layer 14 comprises two materials, namely graphene and a dielectric layer, so that the graphene hyperbolic layer 14 has the characteristics of a hyperbolic material, and effective modulation of an absorption peak of the wave absorber can be obtained through micro change of a graphene Fermi level, so that the modulation sensitivity of the wave absorber is high.
Optionally, the number of the graphene layers 140 and the third dielectric layers 141 is greater than or equal to 3 and less than or equal to 20, for example, the graphene hyperbolic layers 14 include 8 graphene layers 140 and 8 third dielectric layers 141, and the graphene layers 140 and the third dielectric layers 141 are alternately arranged in a direction perpendicular to the substrate 10, so that the wave absorber has a high absorption rate, and the thickness of the wave absorber is also thin, which is convenient for the application of the wave absorber in various fields.
Optionally, the period of the first metal grating layer 12 is 500nm-50 μm; the period of the second metal grating layer 16 is 500nm-50 μm. Optionally, the period of the first metal grating layer 12 is twice the period of the second metal grating layer 16. As shown in fig. 2, the first metal grating layer 12 is an array arranged in 2 rows and 2 columns, as shown in fig. 3, the second metal grating layer 16 is an array arranged in 4 rows and 4 columns, and the period of the first metal grating layer 12 shown in fig. 2 is twice as long as that of the second metal grating layer 16 shown in fig. 3. It should be noted that the periphery of the grating in the first metal grating layer 12 is filled with a dielectric layer to form a flat surface, so as to deposit the first dielectric layer 13 on the first metal grating layer 12.
Since the absorption peak of the wave absorber is sensitive to the material and the structural parameters of the wave absorber, the absorption effect of the wave absorber can be optimized by calculating and adjusting the structural parameters of the wave absorber, such as adjusting the periods of the first metal grating layer 12 and the second metal grating layer 16.
In addition, the material of the dielectric layer in the embodiment of the present invention includes, but is not limited to, silicon dioxide, aluminum oxide, polyimide resin, and magnesium fluoride. The material of the first metal grating layer 12 includes, but is not limited to, gold, silver, platinum, aluminum or copper; the material of the second metal grating layer 16 includes, but is not limited to, gold, silver, platinum, aluminum, or copper. The material of the first metal electrode 11 and the second metal electrode includes, but is not limited to, gold, silver, platinum, aluminum, or copper.
In one embodiment of the present invention, as shown in fig. 4, w1 ═ 200nm, h1 ═ 100nm, P2 ═ 400nm, t1 ═ 40nm, t2 ═ 40nm, w2 ═ 400nm, h2 ═ 700nm, t3 ═ 10m, and P1 ═ 800 nm. The period of the first metal grating layer 12 is twice the period of the second metal grating layer 16. The number of layers of the graphene layer 140 and the third medium layer 141 in the graphene hyperbolic layer 14 is 8, the thickness of the third medium layer 141 is 10nm, and the thickness of the graphene layer 140 is 0.5 nm. In the structure, the refractive index of all media is set to be 1.25, the metal materials used for the metal grating layer and the metal electrode are Au, the fermi level of graphene is set to be 0.3eV, and the result of electromagnetic finite element analysis is shown in fig. 5, wherein fig. 5(a) is a schematic diagram of absorption peaks of two infrared bands passing through a wave absorber, and the absorption rate of the absorption peak is close to 1; FIG. 5(b) is a schematic diagram reflecting the effect of the size of the graphene Fermi level on the absorption peak; FIGS. 5(c) and 5(d) are schematic diagrams reflecting the effect of the thickness of the third dielectric layer 141 on the absorption peak; 5(e) is a schematic diagram reflecting the influence of the number of graphene layers 140/third medium layers 141 in the graphene hyperbolic layer 14 on an absorption peak; fig. 5(f) is a schematic diagram showing the influence of the period size of the metal grating layer in the wave absorbing device on the absorption peak, where the period ratio of the second metal grating layer 16 to the first metal grating layer 12 is fixed to 1: the figure changes the cycle size of the whole unit. It can be seen that the structural parameters of the wave absorber play a decisive role in the absorption peak, and the absorption peak can be regulated and controlled by changing the Fermi level of the graphene, so that the active regulation and control effect is achieved. Fig. 6 is a schematic diagram of an absorption peak of the wave absorber provided in the embodiment of the present invention, which can achieve a relatively good absorption effect between 0 ° and 70 °.
The embodiment of the present invention further provides a method for manufacturing a wave absorber, as shown in fig. 7, the method includes:
s101: providing a substrate;
s102: forming a first metal layer on a substrate, and partially etching the first metal layer to form a first metal electrode and a first metal grating layer positioned on the surface of the first metal electrode, wherein the first metal grating layer is a two-dimensional square periodic array;
s103: forming a first medium layer on the surface of the first metal grating layer;
s104: forming a graphene hyperbolic layer on the surface of the first dielectric layer, wherein the graphene hyperbolic layer comprises a plurality of graphene layers and a third dielectric layer which are alternately arranged;
s105: forming a second dielectric layer on the surface of the graphene hyperbolic layer;
s106: and forming a second metal layer on the surface of the second medium layer, and etching the second metal layer to form a second metal grating layer, wherein the second metal grating layer is a two-dimensional square periodic array, and the period of the second metal grating layer is different from that of the first metal grating layer.
Wherein, forming the graphene hyperbolic layer on the surface of the first dielectric layer comprises:
and transferring the graphene layer by adopting a PMMA technology and depositing a third medium layer.
Specifically, after providing a substrate, forming a first metal layer on the substrate, forming a photoresist on the surface of the first metal layer, performing exposure and development, forming a first mask, and then performing partial etching on the first metal layer to form a first metal electrode and a grating array located on the surface of the first metal electrode, where optionally, the grating array is a two-dimensional square periodic array as shown in fig. 2. And after removing the first mask, forming a second mask covering the grating arrays, and then depositing a dielectric layer to fill the gaps among the grating arrays with the dielectric layer, thereby forming the first metal grating layer with a flat surface.
And then, depositing a first medium layer on the surface of the first metal grating layer, forming a graphene hyperbolic layer on the surface of the first medium layer, wherein a graphene layer can be transferred onto the substrate by adopting a PMMA (poly methyl methacrylate) technology, and depositing a third medium layer on the graphene layer. Then, depositing a second dielectric layer on the surface of the graphene hyperbolic layer, depositing a second metal layer on the surface of the second dielectric layer, and etching the second metal layer to form a second grating array, i.e. a second metal grating layer, where the second metal grating layer is a two-dimensional square periodic array as shown in fig. 3, and the period of the second metal grating layer is different from that of the first metal grating layer.
In the embodiment of the invention, the first metal grating layer and the second metal grating layer respectively provide wave vector compensation to excite the surface plasmon of the graphene hyperbolic layer and locally locate the incident electromagnetic wave in the graphene hyperbolic layer with high loss, so that the electromagnetic wave with certain wavelength can be completely absorbed, and the absorption rate of the wave absorber is higher. In addition, because the periods of the first metal grating layer and the second metal grating layer are different, two plasmon waves with different wavelengths can be excited, so that perfect absorption of double wavelengths can be realized, and the electromagnetic wave absorption rate of the wave absorber is further improved.
Further, the preparation method of the wave absorber provided by the embodiment of the invention further comprises the following steps:
forming a second metal electrode wrapping the graphene hyperbolic layer;
and forming a voltage control circuit connected with the first metal electrode and the second metal electrode so as to change the absorption peak of the wave absorber through voltage regulation.
When the fermi level of the graphene is changed, the characteristics of the graphene hyperbolic layer are also changed, so that the surface plasmon resonance peak excited by the first metal grating layer and the second metal grating layer is also changed, that is, the position of the absorption peak of the wave absorber is also changed. Since the fermi level (corresponding conductance) of the graphene can be adjusted by the external voltage, the embodiment of the invention changes the external voltage of the hyperbolic graphene layer through the voltage control circuit, so that the absorption peak of the wave absorber is changed along with the modulation of the external voltage, and the wave absorber can absorb electromagnetic waves with different wavelengths. In addition, the graphene hyperbolic layer comprises two materials, namely graphene and a medium layer, so that the graphene hyperbolic layer has the characteristics of a hyperbolic material, the micro-change of the Fermi level of the graphene can obtain effective modulation of an absorption peak of the wave absorber, and the modulation sensitivity of the wave absorber is high.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (8)

1. A wave absorber is characterized by comprising a substrate, a first metal electrode, a first metal grating layer, a first medium layer, a graphene hyperbolic layer, a second medium layer and a second metal grating layer, wherein the first metal electrode, the first metal grating layer, the first medium layer, the graphene hyperbolic layer, the second medium layer and the second metal grating layer are sequentially arranged on the substrate;
the graphene hyperbolic layer comprises a plurality of graphene layers and a third medium layer which are alternately arranged;
the second metal grating layer and the first metal grating layer are both two-dimensional square periodic arrays, and the period of the second metal grating layer is different from that of the first metal grating layer;
the device also comprises a second metal electrode and a voltage control circuit;
the second metal electrode wraps the side face of the graphene hyperbolic layer;
and the voltage control circuit is connected with the first metal electrode and the second metal electrode and is used for changing the absorption peak of the wave absorber through voltage regulation.
2. The wave absorber of claim 1, wherein the number of layers of the graphene layer and the third medium layer is greater than or equal to 3 and less than or equal to 20.
3. The wave absorber of claim 1, wherein the period of the first metal grating layer is twice the period of the second metal grating layer.
4. The wave absorber according to claim 1, wherein the period of the first metal grating layer is 500nm-50 μm;
the period of the second metal grating layer is 500nm-50 μm.
5. The wave absorber of claim 1, wherein the dielectric layer is made of silicon dioxide, aluminum oxide, polyimide resin or magnesium fluoride.
6. The wave absorber according to claim 1, wherein the material of the first metal grating layer is gold, silver, platinum, aluminum or copper;
the second metal grating layer is made of gold, silver, platinum, aluminum or copper;
the first metal electrode and the second metal electrode are made of gold, silver, platinum, aluminum or copper.
7. A method for manufacturing a wave absorber is characterized by comprising the following steps:
providing a substrate;
forming a first metal layer on the substrate, and partially etching the first metal layer to form a first metal electrode and a first metal grating layer on the surface of the first metal electrode, wherein the first metal grating layer is a two-dimensional square periodic array;
forming a first medium layer on the surface of the first metal grating layer;
forming a graphene hyperbolic layer on the surface of the first dielectric layer, wherein the graphene hyperbolic layer comprises a plurality of graphene layers and a third dielectric layer which are alternately arranged;
forming a second dielectric layer on the surface of the graphene hyperbolic layer;
forming a second metal layer on the surface of the second medium layer, and etching the second metal layer to form a second metal grating layer, wherein the second metal grating layer is a two-dimensional square periodic array, and the period of the second metal grating layer is different from that of the first metal grating layer;
forming a second metal electrode wrapping the graphene hyperbolic layer;
and forming a voltage control circuit connected with the first metal electrode and the second metal electrode so as to change the absorption peak of the wave absorber through voltage regulation.
8. The method of claim 7, wherein forming the graphene hyperbolic layer on the surface of the first dielectric layer comprises:
and transferring the graphene layer and depositing the third medium layer by adopting a PMMA technology.
CN201811465647.6A 2018-12-03 2018-12-03 Wave absorber and preparation method thereof Active CN109586042B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811465647.6A CN109586042B (en) 2018-12-03 2018-12-03 Wave absorber and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811465647.6A CN109586042B (en) 2018-12-03 2018-12-03 Wave absorber and preparation method thereof

Publications (2)

Publication Number Publication Date
CN109586042A CN109586042A (en) 2019-04-05
CN109586042B true CN109586042B (en) 2020-08-28

Family

ID=65926414

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811465647.6A Active CN109586042B (en) 2018-12-03 2018-12-03 Wave absorber and preparation method thereof

Country Status (1)

Country Link
CN (1) CN109586042B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111682319A (en) * 2020-04-14 2020-09-18 中国计量大学 Design method of novel broadband tunable coding super surface based on metal-graphene
CN116818704B (en) * 2023-03-09 2024-02-02 苏州荣视软件技术有限公司 High-precision full-automatic detection method, equipment and medium for semiconductor flaw AI

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1463631A1 (en) * 2001-12-20 2004-10-06 Flex Products, Inc. Achromatic multilayer diffractive pigments and foils
CN103594792A (en) * 2013-11-21 2014-02-19 中国科学院上海微系统与信息技术研究所 Manufacturing method of antenna device with combination between hyperbolic dielectric and graphenenanoribbon
CN107452844A (en) * 2017-07-21 2017-12-08 中国工程物理研究院电子工程研究所 The high frequency quantum dot single-photon source of hyperbolic Meta Materials composite grating enhancing
CN107479296A (en) * 2017-08-14 2017-12-15 安徽大学 Infrared narrow-band absorbers during one kind is tunable
CN108363126A (en) * 2018-02-24 2018-08-03 南京信息工程大学 A kind of unrelated wide angle graphene absorber of polarization
CN109543288A (en) * 2018-11-16 2019-03-29 中国舰船研究设计中心 Based on the high power radiation source design method for being mutated topological state

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103117316B (en) * 2013-01-30 2015-08-05 中国科学院苏州纳米技术与纳米仿生研究所 Based on the grapheme transistor of metamaterial structure, photo-detector and application thereof
CN104570402B (en) * 2013-10-12 2018-05-29 中国科学院苏州纳米技术与纳米仿生研究所 Spatial light modulator based on metamaterial structure and preparation method thereof
CN103776790B (en) * 2014-02-25 2016-03-23 重庆大学 A kind of infrared spectrum based on graphene nano antenna strengthens and detection method and device
CN103872153B (en) * 2014-03-19 2016-07-06 中国科学技术大学 A kind of tandem solar cell using metal micro-nanostructure as target
CN105572865A (en) * 2016-01-25 2016-05-11 中国科学院上海光学精密机械研究所 Spectrum selective absorber based on single-layer graphene and Bragg grating
CN106025572B (en) * 2016-05-26 2018-07-17 华北水利水电大学 Graphene ultra wide band wave absorbing device based on local aperiodic structure
CN107579354B (en) * 2017-08-11 2019-10-22 中国科学技术大学 Based on double fiber ring resonator structure, changeable wideband THz wave perfect absorber
CN207689699U (en) * 2018-01-19 2018-08-03 中国计量大学 A kind of double frequency-band Terahertz wave absorbing device based on band and continuous layer graphene
CN208173803U (en) * 2018-05-15 2018-11-30 中国计量大学 Terahertz wave absorbing device that a kind of broadband based on graphene and Meta Materials is adjustable

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1463631A1 (en) * 2001-12-20 2004-10-06 Flex Products, Inc. Achromatic multilayer diffractive pigments and foils
CN103594792A (en) * 2013-11-21 2014-02-19 中国科学院上海微系统与信息技术研究所 Manufacturing method of antenna device with combination between hyperbolic dielectric and graphenenanoribbon
CN107452844A (en) * 2017-07-21 2017-12-08 中国工程物理研究院电子工程研究所 The high frequency quantum dot single-photon source of hyperbolic Meta Materials composite grating enhancing
CN107479296A (en) * 2017-08-14 2017-12-15 安徽大学 Infrared narrow-band absorbers during one kind is tunable
CN108363126A (en) * 2018-02-24 2018-08-03 南京信息工程大学 A kind of unrelated wide angle graphene absorber of polarization
CN109543288A (en) * 2018-11-16 2019-03-29 中国舰船研究设计中心 Based on the high power radiation source design method for being mutated topological state

Also Published As

Publication number Publication date
CN109586042A (en) 2019-04-05

Similar Documents

Publication Publication Date Title
Bhattacharya et al. Beyond 30% conversion efficiency in silicon solar cells: a numerical demonstration
Han et al. Toward the Lambertian limit of light trapping in thin nanostructured silicon solar cells
Jang et al. Multifunctional graphene optoelectronic devices capable of detecting and storing photonic signals
US11011655B2 (en) Three-dimensional conductive electrode for solar cell
US9444002B2 (en) Graphene transistor optical detector based on metamaterial structure and application thereof
CN109586042B (en) Wave absorber and preparation method thereof
JP5642704B2 (en) Photodetector with very thin semiconductor region
CN113432725B (en) Infrared detector with multilayer structure based on CMOS (complementary Metal oxide semiconductor) process
JP2007531277A (en) High response high bandwidth metal-semiconductor-metal photoelectric device
CN107978871A (en) Polarization based on graphene multiple resonant structures does not depend on broadband Terahertz wave absorbing device
US20130087707A1 (en) Infrared thermal detector and method of manufacturing the same
CN112255715A (en) Method for realizing broadband light absorption enhancement based on ultrathin metal film and wave absorbing device
KR102568796B1 (en) Optical modulating device and apparatus including the same
Bora et al. Plasmonic black metals in resonant nanocavities
KR20170068372A (en) Meta device
CN111525272B (en) Broadband terahertz wave absorber based on three-dart-shaped graphene
Li et al. Vertical Ge–Si nanowires with suspended graphene top contacts as dynamically tunable multispectral photodetectors
CN113782621A (en) Plasmon enhanced tellurium-cadmium-mercury microcavity infrared detector and preparation method thereof
CN110943138A (en) Colloidal quantum dot infrared focal plane array based on interference enhancement structure and preparation method
Đorđević et al. Metasurface colloidal quantum dot photodetectors
Elshorbagy et al. Funneling and guiding effects in ultrathin aSi-H solar cells using one-dimensional dielectric subwavelength gratings
Farhat et al. Plasmonically enhanced Schottky photovoltaic devices
CN107544103B (en) Dual-band terahertz wave absorber based on graphene
Jalali Impact of one-dimensional photonic crystal back reflector in thin-film c-Si solar cells on efficiency: Impact of one-dimensional photonic crystal
KR101936466B1 (en) Vertical Nano-structured Photodetector and Method of Forming the same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant