CN103872153B - A kind of tandem solar cell using metal micro-nanostructure as target - Google Patents
A kind of tandem solar cell using metal micro-nanostructure as target Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 76
- 239000002184 metal Substances 0.000 title claims abstract description 76
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 67
- 239000010410 layer Substances 0.000 claims abstract description 163
- 239000000463 material Substances 0.000 claims abstract description 38
- 239000007943 implant Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims description 11
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 3
- 239000013081 microcrystal Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 13
- 230000031700 light absorption Effects 0.000 abstract description 4
- 238000002835 absorbance Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 8
- 239000003623 enhancer Substances 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 230000002708 enhancing effect Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000002082 metal nanoparticle Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000004941 influx Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000005945 translocation Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a kind of tandem solar cell using metal micro-nanostructure as target, it is characterized in that: tandem solar cell includes absorbed layer, lower absorbed layer, metal micro-nanostructure layer and implant, metal micro-nanostructure layer is arranged between absorbed layer and lower absorbed layer, and implant is filled in the space of metal micro-nanostructure layer.Short-wave photons, using metal micro-nanostructure layer as the target of tandem solar cell, is optionally reflected back upper absorbed layer by the present invention, longer-wave photons is transmitted to lower absorbed layer simultaneously, and can be improved the light absorption in levels by multiple resonance mode effect；And target has separated upper absorbed layer and lower absorbed layer, levels material selects no longer to be subject to the restriction of Lattice Matching；Also without making tunnel knot between levels, decrease the voltage drop caused at tunnel knot.
Description
Technical field
The present invention relates to a kind of tandem solar cell.
Background technology
Along with increasing the weight of of energy crisis, Renewable Energy Development has become inevitable trend.Wherein solar energy is distributed widely due to it, obtains the concern of height.For making solaode obtain large-scale practical application, most important is exactly improve solar battery efficiency.Tandem solar cell is paid close attention to widely because its advantage in raising overall power efficiency obtains.Tandem solar cell is composed in series by the semi-conducting material of multiple different energy gaps；Wherein the semi-conducting material of broad stopband is positioned at upper strata, absorbs the photon of shorter wavelength, and the semi-conducting material of low energy gap is positioned at lower floor, absorbs the photon of longer wavelength.Tandem solar cell can take into account big open-circuit voltage and wide Absorber Bandwidth simultaneously, utilizes the sunlight of wide range in maximum efficiency.In tandem solar cell, the relatively crucial selection haveing a problem in that levels material, should consider forbidden band size, and the problem considering Lattice Matching again also must reach currents match between the levels of series connection.Between the levels of series connection, in addition it is also necessary to one layer of tunnel knot, and also can not be ignored in the voltage drop of tunnel junctions and the power of consumption.
The light that metal micro-nanostructure is widely used in thin-film solar cells and comes in enhanced film material absorbs.The surface phasmon excited in metal micro-nanostructure, is strengthened by near field and strong scattering process, by light local in relatively thin absorbing layer of thin film solar cell, it is possible to obtain big absorption efficiency in less volume.Local surface phasmon in metal nanoparticle and the surface plasma wave in metallic film, metal grating are obtained for substantial amounts of concern and application.
The light that metal micro-nanostructure is also used in tandem solar cell strengthen in tandem solar cell absorbs.As tandem solar cell hearth electrode is made reflective contact metal grating, or metal nanoparticle is dispersed in inside battery.But report before is all utilize the Localized field enhancement of metal micro-nanostructure or strong scattering process；And utilize the metal micro-nanostructure selectivity at different wave length place to pass through, reflect, using metal micro-nanostructure as tandem solar cell target, it is not reported.
Summary of the invention
The present invention is for avoiding the weak point existing for above-mentioned prior art, it is provided that a kind of tandem solar cell using metal micro-nanostructure as target, to improving the efficiency of light absorption of entirety；Avoid the impact of the problems such as levels material lattice coupling, currents match, tunnel knot so that material selects, structural design can more diversified liberalization.
This invention address that technical problem, adopt the following technical scheme that
The present invention is using metal micro-nanostructure as the tandem solar cell of target, its construction features is in that: described tandem solar cell includes absorbed layer, lower absorbed layer, metal micro-nanostructure layer and implant, described metal micro-nanostructure layer is arranged between absorbed layer and lower absorbed layer, and described implant is filled in the space of metal micro-nanostructure layer.
Tandem solar cell of the present invention, its construction features is in that: described tandem solar cell also includes contact layer and/or lower contact layer, and described upper contact layer is arranged between absorbed layer and metal micro-nanostructure layer；Described lower contact layer is arranged between lower absorbed layer and metal micro-nanostructure layer.
The mode that is electrically connected between described upper absorbed layer and described lower absorbed layer is serial or parallel connection.
Described metal micro-nanostructure layer is metal perforated board (metallichole-array) structure, metal grating structure or particle array structure；Described metal micro-nanostructure can be cycle or the structure of arrangement aperiodic.
The size of described metal micro-nanostructure layer (includes thickness and the lateral dimension of metal micro-nanostructure layer, when being metal perforated board such as metal micro-nanostructure, including width and the cycle in hole；When being metal nanoparticle array such as metal micro-nanostructure, including diameter and the intergranular distance of granule) for 10nm to 10 μm；The material that described metal micro-nanostructure layer adopts is gold, silver, platinum, aluminum, tungsten or copper.
Described upper absorbed layer is single layer of semiconductor layer or is added by multi-lager semiconductor stacking；
Described lower absorbed layer is single layer of semiconductor layer or is added by multi-lager semiconductor stacking.
Described upper absorbed layer is thin-film material or body block of material；
Described lower absorbed layer is thin-film material or body block of material.
Described upper absorbed layer and lower absorbed layer are with non-crystalline silicon (a-Si), microcrystal silicon (μ c-Si), polysilicon (p-Si), monocrystal silicon (c-Si), GaAs (GaAs), aluminum gallium arsenide (GaAlAs), indium phosphide (InP), cadmium sulfide (CdS), cadmium telluride (CdTe), CIS (CuInSe2), CIGS (CuInxGa(1-x)Se2, CIGS) or poly (3-hexylthiophene) (P3HT)/6,6-phenylC61-butyricacidmethylester (PCBM) be material.Described upper absorbed layer is different with lower absorbed layer material.(upper absorbed layer absorbs short-wave photons, lower absorbed layer absorbs longer-wave photons, and the energy gap of the material therefore going up absorbed layer is more wider than lower floor energy gap)
Described upper contact layer and described lower contact layer are with SiO2, tin indium oxide (ITO), fluorine-doped tin oxide (FTO) or zinc oxide (ZnO) be material；Described implant is with air, SiO2, tin indium oxide (ITO), fluorine-doped tin oxide (FTO) or zinc oxide (ZnO) be material；
The material of described upper contact layer, described lower contact layer and described implant three can be the same or different.
Described tandem solar cell also includes top electrode, back electrode, lead-in wire and/or encapsulating structure.
Metal micro-nanostructure layer can show different resonance effect (such as waveguiding effect at different wave length place, surface phasmon effect etc.), short-wave photons can be reflected back upper absorbed layer, longer-wave photons is transmitted to lower absorbed layer simultaneously, and the light absorption in levels can be improved by multiple resonance effect.Utilize the metal micro-nanostructure layer can serial or parallel connection as the target of tandem solar cell, upper absorbed layer and lower absorbed layer, it is also possible to as independent battery output, thus general power is no longer by the restriction of currents match.And target has separated upper and lower absorbed layer, levels material selects no longer to be subject to the restriction of Lattice Matching；Also without making tunnel knot between levels, decrease the voltage drop caused at tunnel knot.
Metal micro-nanostructure layer can at Visible-to-Near InfaRed wave band excitating surface phasmon, it is also possible to there are other resonance modes such as waveguide mode, thus showing the response characteristic that wavelength selects.By adjustment structure parameter, short wavelength photons can be reflected back the upper absorbed layer of tandem solar cell by metal micro-nanostructure layer；Simultaneously by the effect of the multiple resonance mechanism such as surface phasmon, waveguide mode, longer-wave photons is transmitted to and local is at the lower absorbed layer of tandem solar cell.In common tandem solar cell, due to the incomplete absorption of upper absorbed layer, always some short-wave photons is transmitted to lower absorbed layer and is absorbed by lower absorbed layer.Owing to the forbidden band of lower absorbed layer is narrower, this partial photonic can only produce less open-circuit voltage.And in the structure that the present invention proposes, metal micro-nanostructure layer can regard a selective filter as, and short-wave photons is more limited in upper absorbed layer, thus improving the absorbance of upper absorbed layer and overall energy efficiency.And by the effect of the resonance mechanism such as surface phasmon, waveguide mode, the longer-wave photons being transmitted to lower absorbed layer can obtain Localized field enhancement, thus the absorbance of lower absorbed layer is also strengthened.
Resonance mode is all very sensitive to material, structural parameters, media environment.When being applied to different solaodes (such as different absorbing materials, different-thickness), can passing through to regulate the structural parameters of metal micro-nanostructure, implant etc., thus regulating the overall structure response to spectrum, reaching to optimize the purpose of whole efficiency.
Compared with the prior art, beneficial effects of the present invention is embodied in:
The present invention is using metal micro-nanostructure layer as the target of tandem solar cell, short-wave photons is optionally reflected back upper absorbed layer by metal micro-nanostructure layer, longer-wave photons is transmitted to lower absorbed layer simultaneously, and the light absorption in levels can be improved by multiple resonance mode effect；Utilize metal micro-nanostructure as the target of tandem solar cell, upper absorbed layer and lower absorbed layer can serial or parallel connection, thus general power is no longer by the restriction of currents match；And target has separated upper absorbed layer and lower absorbed layer, levels material selects no longer to be subject to the restriction of Lattice Matching；Also without making tunnel knot between levels, decrease the voltage drop caused at tunnel knot.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention；
Fig. 2 is the schematic diagram of the another kind of version of the present invention；
Fig. 3 is circuit and the light path schematic diagram of tandem solar cell: (a) is the tandem solar cell of conventional planar structure；B tandem solar cell that () is present configuration；
Fig. 4 is the structural representation of the embodiment of the present invention 1: (a) is overall structure schematic diagram；B () is the schematic diagram of metal micro-nanostructure layer in the present embodiment；
Fig. 5 is the optical characteristics of the tandem solar cell prepared by the embodiment of the present invention 1: (a) enters upper absorbed layer (T for transmissiont) and lower absorbed layer (Tb) absorbance；B () is the absorbance of upper absorbed layer, (c) is the absorbance of lower absorbed layer, and the structure of (b) embodiment corresponding to (c) chain lines, solid black lines correspondence does not have the planar structure of metal micro-nanostructure；
Fig. 6 is the relation schematic diagram of the structural parameters of Ag micro structure and power enhancer in the embodiment of the present invention 1: (a) is the relation schematic diagram in hole cycle Yu power enhancer；B () is the relation schematic diagram of width Yu power enhancer；C () is the relation schematic diagram of plate thickness Yu power enhancer；
Fig. 7 is the structural representation of the embodiment of the present invention 2: (a) is overall structure schematic diagram；B () is the schematic diagram of metal micro-nanostructure layer in the present embodiment；
Fig. 8 is the optical characteristics of the tandem solar cell prepared by the embodiment of the present invention 2: (a) is the absorbance of upper absorbed layer；B () is the absorbance of lower absorbed layer；A the structure of () the present embodiment corresponding to (b) chain lines, solid black lines correspondence does not have the planar structure of metal micro-nanostructure；
Number in the figure: absorbed layer on 1；Contact layer on 2；3 implants；4 metal micro-nanostructure layers；5 times contact layers；6 times absorbed layers；7 back electrodes.
Specific embodiment
Below in conjunction with accompanying drawing and example, the invention will be further described.
Fig. 1 is the structural representation of tandem solar cell of the present invention, as can be seen from the figure, the tandem solar cell of the present invention includes absorbed layer 1, lower absorbed layer 6, metal micro-nanostructure layer 4 and implant 3, metal micro-nanostructure layer 4 is arranged between absorbed layer 1 and lower absorbed layer 6, and implant 3 is filled in the space of metal micro-nanostructure layer 4.As in figure 2 it is shown, as required, the tandem solar cell of the present invention is also possible that contact layer 2 and/or lower contact layer 5, and upper contact layer 2 is arranged between absorbed layer 1 and metal micro-nanostructure layer 4；Lower contact layer 5 is arranged between lower absorbed layer 2 and metal micro-nanostructure layer 4.Optical constant according to layers of material, if optical constant difference is relatively big, need to add contact layer to reach optical impedance coupling.Or when levels lattice does not mate, also need to add contact layer to connect bi-material.
Fig. 3 is the electrical and optical principle schematic of tandem solar cell.Wherein (a) is conventional planar structure tandem solar cell；B tandem solar cell that () is present configuration.In the tandem solar cell of conventional planar structure, due to the incomplete absorption on upper strata, part short-wave photons is inevitably transmitted to lower floor and is absorbed by lower floor.The short-wave photons that this part absorbs in lower floor is compared to the short-wave photons absorbed by upper strata, and the open-circuit voltage of generation is less, have impact on overall efficiency.And owing to photovoltaic material is all less at infrared absorptance, longer-wave photons is relatively low at lower floor's absorbance.In the tandem solar cell of the present invention, metal micro-nanostructure is placed between levels, there is selective filter function.Short-wave photons is reflected back upper strata by this metal micro-nanostructure, and more short-wave photons absorbs on upper strata；Longer-wave photons is transmitted to lower floor simultaneously, and by the combined effect of the multiple Resonance Mechanism such as surface phasmon, waveguide mode, strengthens the longer-wave photons absorption in lower floor.Therefore the light of levels absorbs and can be strengthened.
For series connection between the tandem solar cell levels of conventional planar structure, Gu aggregate efficiency is by the restriction of currents match.And between each pn-junction, tunnel knot need to be made to carry out the conduction of carrier.And in the tandem solar cell of the present invention, owing to metal micro-nanostructure individually can be drawn as target, can connect between levels can also be in parallel, it is also possible to as independent battery output, aggregate efficiency is no longer by the impact of currents match.Metal micro-nanostructure has separated levels, and centre is also no longer necessary to tunnel knot, reduces technology difficulty, it also avoid the tunnel junctions voltage drop impact on overall efficiency.And owing to metal micro-nanostructure has separated levels, the selection of levels absorbing material is no longer limited by Lattice Matching, material selects more flexible, it is possible to the factors such as more consideration absorption spectra.
Embodiment 1
As shown in Figure 4 (a), on the present embodiment, absorbed layer 1 selects PCBM, energy gap 1.9ev, thick 100nm；Metal micro-nanostructure 4 is with Ag for material；Implant 3 selects ITO；Lower contact layer 5 selects ITO, and thickness is 10nm；Lower absorbed layer 6 selects inorganic material CuInxGa(1-x)Se2, CuInxGa(1-x)Se2, its energy gap is changed between 1.0-1.7ev with In component, selects x=0.4 in the present embodiment, and corresponding energy gap is 1.1ev, thick 100nm；
Fig. 4 (b) is the detail view of Ag micro-nano structure, and it adopts square aperture array structure, and structural parameters are period p=300nm, hole width w=150nm, hickness of metal plate tm=10nm, this structure is isotropism, and the response of each polarization direction is identical.
The finite element results for electromagnetic field of the optical property of the present embodiment tandem solar cell is as shown in Figure 5.Fig. 5 (a) enters upper absorbed layer and the absorbance of lower absorbed layer for transmission, shortwave (<650nm) photon is had stronger stop by visible metal perforated board, transmission can not enter lower floor, and for long wave (>650nm), due to abnormal transmission (extraordinaryopticaltransmission, EOT) effect, absorbance is close to 1.
Absorbing respectively in absorbed layer, lower absorbed layer on the present embodiment, (b, shown in c) such as Fig. 5.In the result of planar structure such as figure shown in solid black lines, as a comparison.Visible in upper absorbed layer absorbed spectral limit, light absorbs AtopAll obtain enhancing.For lower absorbed layer, short-wave photons is reflected back toward absorbed layer, therefore the absorption of shortwave is suppressed；But at long wave, absorb AbottomObtain the enhancing of wide range.
For quantifying the enhancing that light is absorbed by present configuration, define power enhancer.Considering that the photon energy of different wave length photon is different, it is assumed that each wavelength internal quantum efficiency is 1, open-circuit voltage is proportional to energy gap, the general power of one arbitrary unit of definition
Wherein I is solar spectrum, and h is planck constant, and c is the light velocity in vacuum, EgFor energy gap.Then power enhancer EpowerThe ratio of the general power being defined as in the present invention structure and producing and general power produced by planar structure.At this under definition, in embodiment one, power enhancer is 15.5.
For the structure of the present invention, regulating the geometric parameter of metal micro-nanostructure, the optical property of adjustable structure, thus also having adjustment to overall enhancing.Also by the optimization to micro-nano structure geometric parameter, optimize the reinforced effects of entirety.(a, b, c) respectively to the period p of Ag micro-nano structure, hole width w and plate thickness t for Fig. 6mScanning, the change of power enhancer.At p=260nm, w=150nm, tmWhen=50nm, lower floor ITO contact layer 10nm, it is possible to obtain the power enhancing of 25%.Absorbed layer and the thickness of lower absorbed layer, contact layer thickness, contact layer and implant material in change, also can affect optical property and the reinforced effects of entirety.
Embodiment 2
As shown in Figure 7 (a), on the present embodiment, absorbed layer 1 selects non-crystalline silicon (amorphoussilicon, a-Si, energy gap 1.7ev), thick 100nm；Metal micro-nanostructure 4 is with Ag for material；Implant 3 selects ITO；Upper contact layer 2 and lower contact layer 5 select ITO, and thickness is 20nm；Lower absorbed layer 6 selects microcrystal silicon (micro-crystallinesilicon, μ c-Si, energy gap 1.1ev), thick 150nm；Back electrode 7 is Ag substrate, thickness 100nm；
As shown in Figure 7 (b) shows, the metal micro-nanostructure layer 4 of the present embodiment selects square aperture array structure,
Its structural parameters are period p=300nm, hole width w=150nm, hickness of metal plate tm=50nm.Si material is the most ripe photovoltaic material, and therefore a-Si/ μ c-Si tandem solar cell obtains and pays close attention to widely.The problem one affecting a-Si/ μ c-Si battery efficiency is the light-induced degradation of a-Si, have impact on absorbed layer and the currents match of lower absorbed layer；Two is that μ c-Si is very weak in infrared absorption, for reaching considerable INFRARED ABSORPTION, it usually needs the μ c-Si layer that a few micrometers is thick, and a-Si upper strata has only to hundred ran.In the present embodiment, between upper absorbed layer and lower absorbed layer, add the metal perforated board of last layer square hole array, strengthen, because it has, the effect absorbed, therefore lower absorber thickness is chosen for 150nm.
The absorbent properties of this structure are as shown in Figure 8.For upper absorbed layer, the metal perforated board reflection to short-wave photons, enhance the short-wave photons absorption at upper absorbed layer.For lower absorbed layer, the effect of influx and translocation becomes apparent from, and wherein can reach the enhancing of 15 times at 810nm place influx and translocation.It is 30% that overall efficiency strengthens.
Claims (8)
1. one kind using metal micro-nanostructure as the tandem solar cell of target, it is characterized in that: described tandem solar cell includes absorbed layer (1), lower absorbed layer (6), metal micro-nanostructure layer (4) and implant (3), described metal micro-nanostructure layer (4) is arranged between absorbed layer (1) and lower absorbed layer (6), and described implant (3) is filled in the space of metal micro-nanostructure layer (4)；
Described tandem solar cell also includes contact layer (2) and/or lower contact layer (5), and described upper contact layer (2) is arranged between absorbed layer (1) and metal micro-nanostructure layer (4)；Described lower contact layer (5) is arranged between lower absorbed layer (6) and metal micro-nanostructure layer (4)；
Described metal micro-nanostructure layer (4) is metal perforated board structure, metal grating structure or particle array structure.
2. tandem solar cell according to claim 1, it is characterised in that: the mode that is electrically connected between described upper absorbed layer (1) and described lower absorbed layer (6) is serial or parallel connection.
3. tandem solar cell according to claim 1, it is characterised in that: described metal micro-nanostructure layer (4) is of a size of 10nm to 10 μm；The material that described metal micro-nanostructure layer (4) adopts is gold, silver, platinum, aluminum, tungsten or copper.
4. tandem solar cell according to claim 1, it is characterised in that:
Described upper absorbed layer (1) adds for single layer of semiconductor layer or by multi-lager semiconductor stacking；
Described lower absorbed layer (6) adds for single layer of semiconductor layer or by multi-lager semiconductor stacking.
5. tandem solar cell according to claim 1, it is characterised in that:
Described upper absorbed layer (1) is thin-film material or body block of material；
Described lower absorbed layer (6) is thin-film material or body block of material.
6. tandem solar cell according to claim 1, it is characterized in that: described upper absorbed layer and lower absorbed layer with non-crystalline silicon, microcrystal silicon, polysilicon, monocrystal silicon, GaAs, aluminum gallium arsenide, indium phosphide, cadmium sulfide, cadmium telluride, CIS, CIGS or poly (3-hexylthiophene) (P3HT)/6,6-phenylC61-butyricacidmethylester for material；
Described upper absorbed layer is different with lower absorbed layer material.
7. tandem solar cell according to claim 1, it is characterised in that: described upper contact layer (2) and described lower contact layer (5) are with SiO2, tin indium oxide, fluorine-doped tin oxide or zinc oxide be material；
Described implant (3) is with air, SiO2, tin indium oxide, fluorine-doped tin oxide or zinc oxide be material；
Described upper contact layer (2), described lower contact layer (5) and described implant (3) material are identical or different.
8. tandem solar cell according to claim 1, it is characterised in that: described tandem solar cell also includes top electrode, back electrode, lead-in wire and/or encapsulating structure.
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| CN106601830A (en) * | 2016-12-27 | 2017-04-26 | 张四清 | High-efficiency solar energy utilization system |
| CN109586042B (en) * | 2018-12-03 | 2020-08-28 | 中国科学技术大学 | Wave absorber and preparation method thereof |
| CN110289323B (en) * | 2019-06-12 | 2021-04-30 | 信利半导体有限公司 | Solar cell and preparation method thereof |
| CN112103271B (en) * | 2020-09-08 | 2022-09-27 | 常州大学 | Double-sided light-receiving laminated solar cell module and preparation method thereof |
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| CN101635316A (en) * | 2008-07-24 | 2010-01-27 | 财团法人工业技术研究院 | Laminated film photovoltaic device with plasmon structure and application thereof |
| CN101820010A (en) * | 2009-12-24 | 2010-09-01 | 江苏华创光电科技有限公司 | Solar cell with one-dimensional array nano-structure and preparation method thereof |
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| CN101635316A (en) * | 2008-07-24 | 2010-01-27 | 财团法人工业技术研究院 | Laminated film photovoltaic device with plasmon structure and application thereof |
| CN101820010A (en) * | 2009-12-24 | 2010-09-01 | 江苏华创光电科技有限公司 | Solar cell with one-dimensional array nano-structure and preparation method thereof |
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