CN110289323B - Solar cell and preparation method thereof - Google Patents
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- CN110289323B CN110289323B CN201910506514.7A CN201910506514A CN110289323B CN 110289323 B CN110289323 B CN 110289323B CN 201910506514 A CN201910506514 A CN 201910506514A CN 110289323 B CN110289323 B CN 110289323B
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 230000031700 light absorption Effects 0.000 claims abstract description 98
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims description 17
- 230000005540 biological transmission Effects 0.000 claims description 16
- 238000003384 imaging method Methods 0.000 claims description 16
- 239000011810 insulating material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 3
- 230000007704 transition Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a solar cell and a preparation method thereof. The solar cell comprises a first transparent electrode layer, a first light absorption layer, a reflection electrode layer, a second light absorption layer and a second transparent electrode layer which are sequentially stacked on a transparent substrate, wherein a first cell structure is formed among the first transparent electrode layer, the first light absorption layer and the reflection electrode layer, and a second cell structure is formed among the reflection electrode layer, the second light absorption layer and the second transparent electrode layer. The solar cell is applied to the self-luminous equipment, so that light rays reflected back to the self-luminous equipment can be reduced, the influence on the self-luminous equipment is reduced, the light ray utilization rate can be improved, and the generated energy is increased.
Description
Technical Field
The invention relates to the field of solar cells, in particular to a solar cell and a preparation method thereof.
Background
With the maturity of solar cell technology, more and more self-luminous devices begin to use solar cells as protective cover plates. The solar cell includes a front electrode, a light absorbing layer, and a back electrode, which are sequentially stacked, and the back electrode facing the self-light emitting device is made of a metal material and has a high reflectance. Regardless of whether the light emitting area of the self-luminous device is covered or not, the back electrode reflects light emitted by the self-luminous device, so that normal use of the self-luminous device is affected, for example, the solar cell is attached to the front of the display device, so that the back electrode reflects light emitted by the display device, and further interferes a display picture, for example, the solar cell is arranged in front of the photoelectric sensing device, so that the back electrode can reflect light emitted by the light emitter back, and further a sensing effect of the light receiver is affected.
Disclosure of Invention
In order to solve the defects of the prior art, the invention provides a solar cell which is applied to a self-luminous device, can reduce light rays reflected back to the self-luminous device, lightens the influence on the self-luminous device, can improve the utilization rate of the light rays and increases the power generation amount.
The invention also provides a preparation method of the solar cell.
The technical problem to be solved by the invention is realized by the following technical scheme:
a solar cell comprises a first transparent electrode layer, a first light absorption layer, a reflection electrode layer, a second light absorption layer and a second transparent electrode layer which are sequentially stacked on a transparent substrate, wherein a first cell structure is formed among the first transparent electrode layer, the first light absorption layer and the reflection electrode layer, and a second cell structure is formed among the reflection electrode layer, the second light absorption layer and the second transparent electrode layer.
Further, the first transparent electrode layer serves as a front electrode layer of the first cell structure, the second transparent electrode layer serves as a front electrode layer of the second cell structure, and the reflective electrode layer serves as a common back electrode layer of the first cell structure and the second cell structure.
Furthermore, the display device is provided with a light-transmitting area and a non-light-transmitting area, and the first transparent electrode layer, the first light absorption layer, the reflection electrode layer, the second light absorption layer and the second transparent electrode layer at least cover the non-light-transmitting area.
Furthermore, the solar cell is of a full-transparent type, and the first transparent electrode layer, the first light absorption layer, the reflection electrode layer, the second light absorption layer and the second transparent electrode layer only cover the non-light-transmitting area.
Further, the solar cell is semi-transparent, and the first transparent electrode layer, the first light absorption layer, the reflective electrode layer, the second light absorption layer and the second transparent electrode layer cover the light transmission region and the non-light transmission region simultaneously, wherein the first light absorption layer comprises at least one first light absorption line in the light transmission region, the reflective electrode layer comprises at least one reflective electrode line in the light transmission region, and the second light absorption layer comprises at least one second light absorption line in the light transmission region; the first light absorption lines, the reflection electrode lines and the second light absorption lines are overlapped together in a one-to-one correspondence mode to form at least one grid line.
Further, the whole surface of the first transparent electrode layer covers the light-transmitting area, or the first transparent electrode layer includes at least one first transparent electrode line in the light-transmitting area, and the first transparent electrode line, the first light absorption line, the reflection electrode line and the second light absorption line are overlapped together in a one-to-one correspondence manner to form a part of the grid line.
Further, the second transparent electrode layer includes at least one second transparent electrode line in the light-transmitting region, and the second transparent electrode line, the first light absorption line, the reflection electrode line and the second light absorption line are overlapped together in a one-to-one correspondence to form a part of the grid line.
Further, the light-transmitting area is filled with a transparent insulating material in a blank area except for the grid line.
Further, the whole surface of the second transparent electrode layer covers the light-transmitting area, or the second transparent electrode layer includes at least one second transparent electrode line in the light-transmitting area, and the second transparent electrode line, the first light absorption line, the reflection electrode line and the second light absorption line are overlapped together in a one-to-one correspondence manner to form a part of the grid line.
A method of fabricating a solar cell, comprising:
sequentially forming a first transparent electrode film and a first light absorption film on a transparent substrate, and then sequentially etching and imaging the first light absorption film and the first transparent electrode film to sequentially form a first light absorption layer and a first transparent electrode layer;
forming a reflection electrode film, and then etching and imaging the reflection electrode film to form a reflection electrode layer;
and sequentially forming a second light absorption film and a second transparent electrode film, and then sequentially etching and imaging the second transparent electrode film and the second light absorption film to sequentially form a second transparent electrode layer and a second light absorption layer.
The invention has the following beneficial effects: the solar cell is provided with the two-layer cell structure, when the solar cell is applied to a self-luminous device to be used as a protective cover plate, the first transparent electrode layer faces the outside, the second transparent electrode layer faces the self-luminous device, light rays emitted by the self-luminous device can be absorbed by the second light absorption layer and converted into electric energy, light rays reflected back to the self-luminous device can be reduced, the influence on the self-luminous device is reduced, the light ray utilization rate can be improved, and the generating capacity is increased.
Drawings
Fig. 1 is a schematic view of a fully transparent solar cell provided by the present invention;
FIG. 2 is a schematic view of a semi-permeable solar cell provided by the present invention;
FIG. 3 is a cross-sectional view A-A of the fully transparent solar cell shown in FIG. 1 or the semi-transparent solar cell shown in FIG. 2;
FIG. 4 is a cross-sectional view B-B of the semi-permeable solar cell shown in FIG. 2;
FIG. 5 is a cross-sectional view taken along line B-B of the semi-permeable solar cell shown in FIG. 2;
fig. 6 is a schematic diagram of a binding site of a solar cell provided by the present invention;
FIG. 7 is a block diagram illustrating steps of a method for fabricating a solar cell according to the present invention;
fig. 8 is a schematic view of a solar cell provided by the present invention after a reflective electrode is formed;
fig. 9 is a schematic diagram of a solar cell provided by the present invention after etching and imaging a reflective electrode.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and examples.
Example one
As shown in fig. 1 to 3, a solar cell includes a first transparent electrode layer 2, a first light absorbing layer 3, a reflective electrode layer 4, a second light absorbing layer 5, and a second transparent electrode layer 6, which are sequentially stacked on a transparent substrate 1, wherein a first cell structure is formed among the first transparent electrode layer 2, the first light absorbing layer 3, and the reflective electrode layer 4, and a second cell structure is formed among the reflective electrode layer 4, the second light absorbing layer 5, and the second transparent electrode layer 6.
The solar cell is provided with the two-layer cell structure, when the solar cell is applied to a self-luminous device to be used as a protective cover plate, the first transparent electrode layer 2 faces the outside, the second transparent electrode layer 6 faces the self-luminous device, and light rays emitted by the self-luminous device can be absorbed by the second light absorption layer 5 and converted into electric energy, so that the light rays reflected back to the self-luminous device can be reduced, the influence on the self-luminous device is reduced, the light ray utilization rate can be improved, and the generated energy is increased.
Wherein the first transparent electrode layer 2 serves as a front electrode layer of the first cell structure, the second transparent electrode layer 6 serves as a front electrode layer of the second cell structure, and the reflective electrode layer 4 serves as a common back electrode layer of the first cell structure and the second cell structure.
The solar cell has a light-transmitting region a corresponding to a light-emitting region of the self-light-emitting device, such as a display region of a display device or an emission-receiving region of a photo-sensing device, and a non-light-transmitting region b corresponding to a bezel region of the self-light-emitting device.
The first transparent electrode layer 2, the first light absorption layer 3, the reflective electrode layer 4, the second light absorption layer 5 and the second transparent electrode layer 6 at least cover the non-light-transmitting area b.
As shown in fig. 1, in one embodiment, the solar cell is a full-transparent type, and the first transparent electrode layer 2, the first light absorbing layer 3, the reflective electrode layer 4, the second light absorbing layer 5 and the second transparent electrode layer 6 are only covered on the non-light-transmitting region b.
When the display device has side light leakage in its frame region, or when light emitted from the light emitter of the photo-sensing device is scattered to its frame region, the light emitted from the light emitting device is irradiated onto the non-light-transmitting region b of the solar cell from its frame region, and then absorbed by the second light absorbing layer 5 on the non-light-transmitting region b and converted into electric energy.
In another embodiment, as shown in fig. 2, the solar cell is a semi-transparent type, and the first transparent electrode layer 2, the first light absorbing layer 3, the reflective electrode layer 4, the second light absorbing layer 5 and the second transparent electrode layer 6 are simultaneously covered on the light transmitting area a and the non-light transmitting area b, wherein as shown in fig. 4 and 5, the first light absorbing layer 3 includes at least one first light absorbing line 31 in the light transmitting area a, the reflective electrode layer 4 includes at least one reflective electrode line 41 in the light transmitting area a, and the second light absorbing layer 5 includes at least one second light absorbing line 51 in the light transmitting area a; the first light absorption lines 31, the reflective electrode lines 41 and the second light absorption lines 51 are overlapped together in a one-to-one correspondence to form at least one grid line c.
The first transparent electrode layer 2 and/or the second transparent electrode layer 6 may entirely cover the light-transmitting area a as shown in fig. 4, or may respectively include at least one first transparent electrode line 21 and/or at least one second transparent electrode line 61 in the light-transmitting area a as shown in fig. 5, and the first transparent electrode line 21 and/or the second transparent electrode line 61, the first light-absorbing line 31, the reflective electrode line 41, and the second light-absorbing line 51 are overlapped together in a one-to-one correspondence manner to form a part of the grid line c.
As shown in fig. 4, if the entire surface of the second transparent electrode layer 6 covers the transparent area a, the transparent area a is filled with a transparent insulating material 8 in a blank area except for the grid lines c, so as to insulate and isolate the second transparent electrode layer 6 from the first transparent electrode layer 2 and the reflective electrode layer 4, respectively.
In the solar cell, the first transparent electrode layer 2, the first light absorption layer 3 and the reflective electrode layer 4 extend to cover the light transmission region a, so that the power generation area can be increased, and the power generation amount can be improved. However, the light emitted from the light emitting device will irradiate onto the light transmitting area a of the solar cell from the light emitting area and then be reflected by the reflective electrode layer 4 on the light transmitting area a, so the solar cell will also extend and cover the second light absorbing layer 5 and the second transparent electrode layer 6 onto the light transmitting area a, and the second light absorbing layer 5 can absorb and convert the light emitted from the light emitting device into electric energy, thereby reducing the light reflected back to the light emitting device, alleviating the influence on the light emitting device, improving the light utilization rate, and increasing the power generation amount.
When the solar cell is manufactured, the purpose of adjusting the transmittance of the light-transmitting area a can be achieved by controlling the line width of the grid lines c.
Preferably, the light-transmitting area a has a plurality of grid lines c, and the grid lines c are parallel to each other.
Finally, the solar cell further comprises a transparent insulating layer 7 laminated on the second transparent electrode layer 6 for protecting the circuits on the solar cell. It should be noted that the transparent insulating layer 7 and the transparent insulating material 8 filled in the light-transmitting area a are not necessarily fabricated in the same layer, if the entire second transparent electrode layer 6 covers the light-transmitting area a, the transparent insulating layer 7 and the transparent insulating material 8 are fabricated in different layers, and if the second transparent electrode layer 6 forms a part of the grid line c in the light-transmitting area a in the form of the second transparent electrode line 61, the transparent insulating layer 7 and the transparent insulating material 8 may be fabricated in the last layer.
The non-light-transmitting area b is provided with a binding position for binding the FPC. As shown in fig. 6, in the binding position, the second transparent electrode layer 6 is led out from the through hole of the transparent insulating layer 7 through an anode lead 10, the anode lead 10 is routed to the first transparent electrode layer 2 and is located on the PIN structure 22 of the binding position, and forms an anode PIN together with the PIN structure 22 in a manner of forming an electrical connection with the PIN structure 22 in a stacking manner, preferably, a transition electrode 43 is further stacked between the PIN structure 22 and the anode lead 10, the transition electrode 43 forms an electrical connection, and the transition electrode 43 also forms a part of the anode PIN. The intermediate electrode 43 and the reflective electrode layer 4 are formed in the same layer, and the cathode PIN 42 of the reflective electrode layer 4 is exposed from the second light absorbing layer 5, the second transparent electrode layer 6 and the transparent insulating layer 7.
Meanwhile, the outer side of the edge of the first light absorption layer 3 is also provided with an insulating layer 9 so as to insulate and isolate the reflecting electrode layer 4 and the first transparent electrode layer 2 in the manufacturing process of the solar cell; the insulating layer 9 covers the first transparent electrode layer 2 at the binding site and is located between the first light absorbing layer 3 and the transition electrode 43.
The material of the anode lead 10 can be transparent or opaque, and is preferably a low-resistivity material, so as to reduce the overall resistance of the solar cell; preferably, the resistivity of the material of the anode lead 10 is lower than the resistivity of the material of the first transparent electrode layer 2 and the second transparent electrode layer 6.
Example two
As shown in fig. 7, a method for manufacturing a solar cell according to the first embodiment includes:
step 1: sequentially forming a first transparent electrode film and a first light absorption film on a transparent substrate 1, then sequentially etching and imaging the first light absorption film and the first transparent electrode film, and sequentially forming a first light absorption layer 3 and a first transparent electrode layer 2, wherein the first transparent electrode layer 2 comprises a PIN structure 22 located on a binding site, and the PIN structure 22 is exposed by the first light absorption layer 3;
step 2: forming an insulating film, then etching and imaging the insulating film to form an insulating layer 9, wherein the insulating layer 9 covers the first transparent electrode layer 2 bound to the position and exposes the PIN structure 22;
and step 3: forming a reflection electrode film, and then etching and imaging the reflection electrode film to form a reflection electrode layer 4, wherein the reflection electrode layer 4 comprises a cathode PIN 42 and a transition electrode 43 which are located on binding positions, and the transition electrode 43 is laminated on the PIN structure 22 and is electrically connected with the PIN structure 22;
and 4, step 4: sequentially forming a second light absorption film and a second transparent electrode film, and then sequentially etching and imaging the second transparent electrode film and the second light absorption film to sequentially form a second transparent electrode layer 6 and a second light absorption layer 5, wherein the cathode PIN 42 and the transition electrode 43 are exposed by the second transparent electrode layer 6 and the second light absorption layer 5;
and 5: forming a transparent insulating film, then performing etching imaging on the transparent insulating film to form a transparent insulating layer 7, wherein the cathode PIN 42 and the transition electrode 43 are exposed out of the transparent insulating layer 7, and a through hole for exposing the second transparent electrode layer 6 is formed in the second transparent electrode layer 6;
step 6: forming a wiring film, then performing etching imaging on the wiring film to form an anode lead 10, leading out the second transparent electrode layer 6 from the through hole of the transparent insulating layer 7 by the anode lead 10, laminating the wiring on the transition electrode 43 to form electrical connection with the transition electrode 43, and forming an anode PIN by the anode lead 10, the transition electrode 43 and the PIN structure 22.
In the preparation method, when the reflective electrode film is formed, as shown in fig. 8, the reflective electrode film 40 is separated from the first transparent electrode layer 2 by the insulating layer 9, after the reflective electrode layer 4 is etched and imaged, as shown in fig. 9, the reflective electrode layer 4 is completely disconnected from the first transparent electrode layer 2, the transition electrode 43 and the reflective electrode layer 4 are simultaneously manufactured, the PIN structure 22 of the first transparent electrode layer 2 can be led out and protected, and the overall resistance is reduced; the second light absorption film and the second transparent electrode film are continuously formed, and the second transparent electrode layer 6 and the second light absorption layer 5 are formed by etching in sequence, so that the second transparent electrode film is prevented from being in contact with the first transparent electrode layer 2 for conduction when being formed.
The above-mentioned embodiments only express the embodiments of the present invention, and the description is more specific and detailed, but not understood as the limitation of the patent scope of the present invention, but all the technical solutions obtained by using the equivalent substitution or the equivalent transformation should fall within the protection scope of the present invention.
Claims (14)
1. A solar cell, characterized by: the solar cell comprises a first transparent electrode layer, a first light absorption layer, a reflection electrode layer, a second light absorption layer and a second transparent electrode layer which are sequentially laminated on a transparent substrate, wherein a first cell structure is formed among the first transparent electrode layer, the first light absorption layer and the reflection electrode layer, and a second cell structure is formed among the reflection electrode layer, the second light absorption layer and the second transparent electrode layer;
the solar cell is semi-transparent, is provided with a light-transmitting area and a non-light-transmitting area, and is applied to display equipment, wherein the light-transmitting area corresponds to a display area of the display equipment, and the non-light-transmitting area corresponds to a frame area of the display equipment;
the first transparent electrode layer, the first light absorption layer, the reflective electrode layer, the second light absorption layer and the second transparent electrode layer cover the light transmission area and the non-light transmission area simultaneously, wherein the first light absorption layer comprises at least one first light absorption line in the light transmission area, the reflective electrode layer comprises at least one reflective electrode line in the light transmission area, and the second light absorption layer comprises at least one second light absorption line in the light transmission area; the first light absorption lines, the reflection electrode lines and the second light absorption lines are overlapped together in a one-to-one correspondence mode to form at least one grid line.
2. The solar cell of claim 1, wherein: the first transparent electrode layer is used as a front electrode layer of the first cell structure, the second transparent electrode layer is used as a front electrode layer of the second cell structure, and the reflective electrode layer is used as a common back electrode layer of the first cell structure and the second cell structure.
3. The solar cell of claim 1, wherein: the whole surface of the first transparent electrode layer covers the light-transmitting area, or the first transparent electrode layer comprises at least one first transparent electrode line in the light-transmitting area, and the first transparent electrode line, the first light absorption lines, the reflection electrode line and the second light absorption lines are overlapped together in a one-to-one correspondence mode to form a part of the grid lines.
4. The solar cell according to claim 1 or 3, characterized in that: the second transparent electrode layer comprises at least one second transparent electrode line in the light-transmitting area, and the second transparent electrode line, the first light absorption lines, the reflection electrode line and the second light absorption lines are overlapped together in a one-to-one correspondence mode to form a part of the grid lines.
5. The solar cell of claim 1, wherein: the transparent area is filled with a transparent insulating material in the blank area except the grid line.
6. The solar cell of claim 5, wherein: the whole surface of the second transparent electrode layer covers the light-transmitting area, or the second transparent electrode layer comprises at least one second transparent electrode line in the light-transmitting area, and the second transparent electrode line, the first light absorption lines, the reflection electrode line and the second light absorption lines are overlapped together in a one-to-one correspondence mode to form a part of the grid lines.
7. The method of manufacturing a solar cell according to claim 1, comprising:
sequentially forming a first transparent electrode film and a first light absorption film on a transparent substrate, and then sequentially etching and imaging the first light absorption film and the first transparent electrode film to sequentially form a first light absorption layer and a first transparent electrode layer;
forming a reflection electrode film, and then etching and imaging the reflection electrode film to form a reflection electrode layer;
and sequentially forming a second light absorption film and a second transparent electrode film, and then sequentially etching and imaging the second transparent electrode film and the second light absorption film to sequentially form a second transparent electrode layer and a second light absorption layer.
8. A solar cell, characterized by: the solar cell comprises a first transparent electrode layer, a first light absorption layer, a reflection electrode layer, a second light absorption layer and a second transparent electrode layer which are sequentially laminated on a transparent substrate, wherein a first cell structure is formed among the first transparent electrode layer, the first light absorption layer and the reflection electrode layer, and a second cell structure is formed among the reflection electrode layer, the second light absorption layer and the second transparent electrode layer;
the solar cell is semi-transparent, is provided with a light-transmitting area and a non-light-transmitting area, and is applied to photoelectric sensing equipment, wherein the light-transmitting area corresponds to an emission and receiving area of the photoelectric sensing equipment, and the non-light-transmitting area corresponds to a frame area of the photoelectric sensing equipment;
the first transparent electrode layer, the first light absorption layer, the reflective electrode layer, the second light absorption layer and the second transparent electrode layer cover the light transmission area and the non-light transmission area simultaneously, wherein the first light absorption layer comprises at least one first light absorption line in the light transmission area, the reflective electrode layer comprises at least one reflective electrode line in the light transmission area, and the second light absorption layer comprises at least one second light absorption line in the light transmission area; the first light absorption lines, the reflection electrode lines and the second light absorption lines are overlapped together in a one-to-one correspondence mode to form at least one grid line.
9. The solar cell of claim 8, wherein: the first transparent electrode layer is used as a front electrode layer of the first cell structure, the second transparent electrode layer is used as a front electrode layer of the second cell structure, and the reflective electrode layer is used as a common back electrode layer of the first cell structure and the second cell structure.
10. The solar cell of claim 8, wherein: the whole surface of the first transparent electrode layer covers the light-transmitting area, or the first transparent electrode layer comprises at least one first transparent electrode line in the light-transmitting area, and the first transparent electrode line, the first light absorption lines, the reflection electrode line and the second light absorption lines are overlapped together in a one-to-one correspondence mode to form a part of the grid lines.
11. The solar cell according to claim 8 or 10, characterized in that: the second transparent electrode layer comprises at least one second transparent electrode line in the light-transmitting area, and the second transparent electrode line, the first light absorption lines, the reflection electrode line and the second light absorption lines are overlapped together in a one-to-one correspondence mode to form a part of the grid lines.
12. The solar cell of claim 8, wherein: the transparent area is filled with a transparent insulating material in the blank area except the grid line.
13. The solar cell of claim 12, wherein: the whole surface of the second transparent electrode layer covers the light-transmitting area, or the second transparent electrode layer comprises at least one second transparent electrode line in the light-transmitting area, and the second transparent electrode line, the first light absorption lines, the reflection electrode line and the second light absorption lines are overlapped together in a one-to-one correspondence mode to form a part of the grid lines.
14. The method for manufacturing a solar cell according to claim 8, comprising:
sequentially forming a first transparent electrode film and a first light absorption film on a transparent substrate, and then sequentially etching and imaging the first light absorption film and the first transparent electrode film to sequentially form a first light absorption layer and a first transparent electrode layer;
forming a reflection electrode film, and then etching and imaging the reflection electrode film to form a reflection electrode layer;
and sequentially forming a second light absorption film and a second transparent electrode film, and then sequentially etching and imaging the second transparent electrode film and the second light absorption film to sequentially form a second transparent electrode layer and a second light absorption layer.
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| CN103872153B (en) * | 2014-03-19 | 2016-07-06 | 中国科学技术大学 | A kind of tandem solar cell using metal micro-nanostructure as target |
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