CN109543288A - Based on the high power radiation source design method for being mutated topological state - Google Patents
Based on the high power radiation source design method for being mutated topological state Download PDFInfo
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- 238000013461 design Methods 0.000 title claims abstract description 44
- 230000005855 radiation Effects 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052582 BN Inorganic materials 0.000 claims abstract description 14
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000005466 cherenkov radiation Effects 0.000 claims abstract description 10
- 238000005516 engineering process Methods 0.000 claims description 10
- 239000006185 dispersion Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 239000000284 extract Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 239000002245 particle Substances 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004422 calculation algorithm Methods 0.000 description 1
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- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
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Abstract
Based on the high power radiation source design method for being mutated topological state, pass through the material component and thickness of Frequency Design differing dielectric constant, device output radiation characteristic is designed in the topological state catastrophe point of material, specific steps: S1, a kind of irradiation device structure for supporting to be mutated topological state is designed, it is divided into graphene layer/three layers of boron nitride layer/metallic aluminum, wherein graphene layer is dielectric property in extreme ultraviolet, and metallic aluminum realizes metallic character；The thickness design of S2, irradiation device structure；S3, radiation field intensity and electronic flight distance design, the Cerenkov radiation wave vector direction of topological state catastrophe point is along the direction of propagation, and the direction of energy flow of electromagnetic wave is vertical with wave vector direction, and realization electron energy, which maximizes, to be extracted.The present invention is mutated to realize high power microwave radiation using material topology state；On the basis of realizing radiation using low electron energy, adjustable narrow-band high-power output is realized, to form the design of high power regulable center frequency radiation-emitting chip and develop.
Description
Technical field
The present invention relates to high-power pulsed ion beams design fields, and in particular to a kind of based on the high power spoke for being mutated topological state
Penetrate source design method.
Background technique
When charged particle passes through dielectric with certain speed threshold value, the electromagnetic radiation that driving medium issues, which is referred to as, cuts human relations
Section husband radiation.The generation of Cerenkov radiation needs charged particle speed to be more than phase velocity of the electromagnetic wave in medium.Tradition
Generating Cerenkov radiation to need electron energy is about several hundred keV.Radiation source under this high voltage demands is whether from peace
Entirely, cost or stability are all difficult to meet practical application condition.
Electron energy needed for generating Cerenkov radiation for reduction, Massachusetts Institute Technology Marin Soljacic et al.
It discloses using high-order Smith-Purcell effect and realizes low electron energy radiation, electron energy 4keV is limited to partly lead
Body processing technology, it is 400 nanometers that output wavelength is most short；Liu Shenggang academician etc. discloses Cherenkov's surface plasmons method
Realize miniature radiation source, 500 nanometers of output wavelength, required electron energy is 15keV；Xiao Long et al. discloses hyperbolic Meta Materials
Middle Cerenkov radiation device design method, it is electric around low energy electrons by being extracted using the big wave vector in hyperbolic Meta Materials
Magnetic energy.But the design of hyperbolic Meta Materials is dependent on the metal of the frequency range and the intrinsic electromagnetic property of dielectric material, in Terahertz, pole
The frequency ranges such as deep ultraviolet there is no the design method in extreme ultraviolet frequency range high power radiation source currently without corresponding material system at present
And the relevant technologies.Radiant power spectrum is wider simultaneously, and in practical application, unifrequency electromagnetic radiation power spectral density is lower, in radiation
Frequency of heart cannot regulate and control, and greatly limit the application of extreme ultraviolet radiation source.
High power radiation source device is the nucleus module of High Power Microwave System, and traditional devices use electrovacuum correlation skill
Art.For electric vacuum technology, frequency is higher, and difficulty of processing is bigger, and device radiation efficiency is lower.The dielectric constant of conventional media
Dispersion curve is " ECC Type ", as shown in Figure 1.In hyperbolic Meta Materials, dielectric constant dispersion curve is illustrated in figure 2
" hyperbolic-type ".For the current problem for lacking novel high-frequency, high-power electromagnetic wave radiation device, high power extreme ultraviolet spoke is carried out
It penetrates the design in source, develop, find a method and realize that dispersion curve is changed into the topology of " hyperbolic-type " by " ECC Type "
The state that state mutates designs device radiation characteristic, is respectively changed into Fig. 2 " hyperbolic by " ECC Type " positive in Fig. 1
Line style " bears " ECC Type " in Fig. 1 and is changed into Fig. 2 " hyperbolic-type ".
Summary of the invention
The technical problem to be solved by the present invention is to certain frequency range cannot be reached by being limited to dielectric constant for traditional material
Deficiency is provided a kind of high power radiation source design method based on the topological state of mutation, is mutated using material topology state to realize height
Power microwave radiation；On the basis of realizing radiation using low electron energy, adjustable narrow-band high-power output is realized, to be formed
The design of high power regulable center frequency radiation-emitting chip and development.
Used technical solution is the present invention to solve above-mentioned technical problem:
Based on the high power radiation source design method for being mutated topological state, pass through the material group of Frequency Design differing dielectric constant
Divide and thickness realizes the state that dispersion curve is mutated by the topological state that " ECC Type " is changed into " hyperbolic-type ", in material
The topological state catastrophe point of material designs device output radiation characteristic, specifically comprises the following steps:
S1, a kind of irradiation device structure for supporting to be mutated topological state is designed, which is divided into graphene layer/nitrogen
Change three layers of boron layer/metallic aluminum, wherein graphene layer is dielectric property in extreme ultraviolet, and metallic aluminum realizes metallic character；
The thickness design of S2, irradiation device structure, the number of plies, the thickness foundation of boron nitride layer and metallic aluminum of graphene layer
Formula (1), (2) are determined:
εy=εz=m εg+nεd+(1-m-n)εm (2)
Wherein εgFor graphene dielectric constant, εdFor boron nitride dielectric constant, εmFor dielectric constant of metal, m, n are respectively stone
Thickness proportion shared by black alkene layer and boron nitride layer, εx、εy、εzThe respectively equivalent dielectric of irradiation device structure in the X, Y, Z direction
Constant, design calculates effective dielectric constant ε on the basis of formula (1), (2)x、εy、εz；
S3, radiation field intensity and electronic flight distance design, the Cerenkov radiation wave vector direction of topological state catastrophe point is along biography
Direction is broadcast, the direction of energy flow of electromagnetic wave is vertical with wave vector direction, it realizes that electron energy maximizes and extracts, while being coupled to medium
In electromagnetic energy be radiated to outside structural body with lowest loss and (subtract as far as possible while maximizing and extracting electromagnetic energy around electronics
It is small since there are caused losses to influence for metal imaginary part).
According to the above scheme, in the step S1, graphene dielectric constant realizes dynamic regulation by applied voltage.
According to the above scheme, in the step S2, graphene layer is with a thickness of 1 nanometer, and boron nitride layer thickness is 3-5 nanometers, gold
Belonging to aluminum layer thickness is 5-10 nanometers.
According to the above scheme, it in the step S3, by electronics ambient energy density integral, obtains under the irradiation device structure
Using the electron energy of 1keV, electromagenetic wave radiation power density is up to 2 × 1012W/cm2, relative to radiant power in hyperbolic Meta Materials
Density promotes an order of magnitude.
According to the above scheme, it is complete to pass through standard semiconductor micro-nano technology technique for all preparation processing technologys in high power radiation source
At structural body, which is worked on chip, (can reduce cost while reducing and radiating Source size, have large scale quantities production capacity
Power).
Compared with the prior art, the invention has the following beneficial effects:
1, present invention firstly discloses theories and design that device output characteristics is designed in the topological state catastrophe point of material
Scheme, and analytic explanation is carried out in principle and characteristic of the extreme ultraviolet frequency range to the device, device output power is from emulation than existing
There is highest index (hyperbolic Meta Materials) high an order of magnitude；
2, the present invention makes the wave vector direction of electromagnetic wave and direction of energy flow hang down by the selection of special structure design and material
Directly, herein in special circumstances, it realizes that electron energy maximizes to extract while being coupled to the electromagnetic energy in medium with lowest loss
It is radiated to outside structural body；
3, the present invention uses semiconductor micro-nano processing technology, and structural body (scatterer) is worked on chip, is expected to micro-
Type high power microwave weapon, efficient remote-wireless energy transmission etc. are generated as the field of carrier using electromagnetic wave energy source and are widely answered
With making electromagnetic field is more efficient to be transmitted to far field.
Detailed description of the invention
Fig. 1 is traditional material dispersion curve " elliptical arch " figure；
Fig. 2 is hyperbolic Meta Materials " hyperbolic-type " figure；
Fig. 3 is that the present invention is based on the high power radiation source schematic diagrames for being mutated topological state；
Fig. 4 is for the present invention as wavelength shift effective dielectric constant becomes " hyperbolic-type " schematic diagram from " elliptical arch "；
Fig. 5 is topological state sudden change region schematic diagram in Fig. 4, and Dark grey is topological state sudden change region；
Fig. 6 is that obtain output wavelength be 111 nano electromagnetic ideographs to simulation calculation；
Fig. 7 is that obtain output center wavelength be 174 nano electromagnetic ideographs for emulation.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.
Core technology approach of the present invention is exactly by the material component and thickness in specific Frequency Design differing dielectric constant
Degree realization dispersion curve designs device by the state that the topological state that " ECC Type " is changed into " hyperbolic-type " mutates
Radiation characteristic.It is changed into Fig. 2 " hyperbolic-type " by " ECC Type " positive in Fig. 1 respectively, " ECC Type " is born in Fig. 1 and is turned
Become in Fig. 2 " hyperbolic-type ".Based on this mentality of designing, lack novel high-frequency, high-power electromagnetic wave radiation device for current
Problem, carry out high power extreme ultraviolet radiation source design, develop.
The present invention is illustrated so that centre frequency is extreme ultraviolet frequency range miniaturized radiation source as an example, specific device architecture such as Fig. 3
It is shown.Based on the high power radiation source design method for being mutated topological state, specifically comprise the following steps:
S1, the irradiation device structure design for being mutated topological state, the irradiation device structure is supported to be divided into graphene layer/boron nitride
Three layers of layer/metallic aluminum, wherein graphene layer is dielectric property in extreme ultraviolet, passes through applied voltage, the dielectric constant of graphene
Realize dynamic regulation；Metallic aluminum realizes metallic character；
The thickness design of S2, irradiation device structure, the number of plies, the thickness foundation of boron nitride layer and metallic aluminum of graphene layer
Formula (1), (2) are determined, and for graphene layer with a thickness of 1 nanometer, boron nitride layer thickness is 3-5 nanometers, metallic aluminum with a thickness of
5-10 nanometers (such as graphene 1nm, boron nitride 4nm, metallic aluminium 5nm, then thickness proportion m=0.1 shared by graphene layer, nitrogenizes
0.5) thickness proportion n=0.4 shared by boron layer, thickness proportion shared by metallic aluminum are；It designs and calculates on the basis of formula (1), (2)
Effective dielectric constant εx、εy、εz, as shown in figure 4, wherein A ' point is device projected working point, corresponding design radiation center wavelength is
100 nanometers and 170 nanometers, as shown in Figure 5；
S3, radiation field intensity and electronic flight distance design, the Cerenkov radiation wave vector direction of topological state catastrophe point is along biography
Direction is broadcast, the direction of energy flow of electromagnetic wave is vertical with wave vector direction, i.e., direction of energy flow realizes electron energy perpendicular to the direction of propagation
It maximizes and extracts, while being coupled to the electromagnetic energy in medium and being radiated to outside structural body with lowest loss.
Technical key point of the present invention includes: (1) based on the irradiation device design principle method and technique way for being mutated topological state
Diameter；(2) it is mutated the high-power output characteristic of the irradiation device of topological state；(3) it is mutated the wave vector of the irradiation device of topological state, can flow
Vector regulates and controls method.Based on the above theoretical analysis and calculation as a result, being calculated using Particle-in-Cell (PIC-FDTD) algorithm
Electromagnetic radiation characteristic in this configuration, calculated result are as shown in Figure 6 and Figure 7.It is not both topological state with traditional Cerenkov radiation
The Cerenkov radiation wave vector direction of catastrophe point is along the direction of propagation, and direction of energy flow is perpendicular to the direction of propagation.By by electromagnetic wave
Direction of energy flow is vertical with wave vector direction, is can reduce as far as possible while maximizing and extracting electromagnetic energy around electronics due to metal
There are caused losses to influence for imaginary part, to realize that the maximization of electromagnetic energy around electronics is extracted.Pass through electronics ambient energy
Density integral obtains the electron energy for utilizing 1keV under such configuration, and electromagenetic wave radiation power density is up to 2 × 1012W/cm2,
An order of magnitude is promoted relative to radiosity in hyperbolic Meta Materials.
The present invention is not limited to the applications listed in the specification and the embodiments, and is come for those skilled in the art
It says, various corresponding changes and modification can be made according to the present invention, and all these corresponding changes and modification belong to this hair
Bright scope of protection of the claims.
Claims (5)
1. based on the high power radiation source design method for being mutated topological state, which is characterized in that normal by Frequency Design different dielectric
Several material components and thickness realize that dispersion curve is mutated by the topological state that " ECC Type " is changed into " hyperbolic-type "
State, design device output radiation characteristic in the topological state catastrophe point of material, specifically comprise the following steps:
S1, a kind of irradiation device structure for supporting to be mutated topological state is designed, which is divided into graphene layer/boron nitride
Three layers of layer/metallic aluminum, wherein graphene layer is dielectric property in extreme ultraviolet, and metallic aluminum realizes metallic character；
The thickness design of S2, irradiation device structure, the thickness of the number of plies of graphene layer, boron nitride layer and metallic aluminum is according to formula
(1), (2) are determined:
εy=εz=m εg+nεd+(1-m-n)εm (2)
Wherein εgFor graphene dielectric constant, εdFor boron nitride dielectric constant, εmFor dielectric constant of metal, m, n are respectively graphene
Thickness proportion shared by layer and boron nitride layer, εx、εy、εzThe respectively equivalent dielectric of irradiation device structure in the X, Y, Z direction is normal
Number, design calculates effective dielectric constant ε on the basis of formula (1), (2)x、εy、εz；
S3, radiation field intensity and electronic flight distance design, the Cerenkov radiation wave vector direction of topological state catastrophe point is along propagation side
To, the direction of energy flow of electromagnetic wave is vertical with wave vector direction, it realizes that electron energy maximizes and extracts, while being coupled in medium
Electromagnetic energy is radiated to outside structural body with lowest loss.
2. as described in claim 1 based on the high power radiation source design method for being mutated topological state, it is characterised in that: the step
In rapid S1, graphene dielectric constant realizes dynamic regulation by applied voltage.
3. as described in claim 1 based on the high power radiation source design method for being mutated topological state, it is characterised in that: the step
In rapid S2, graphene layer is with a thickness of 1 nanometer, and boron nitride layer thickness is 3-5 nanometers, and metallic aluminum is with a thickness of 5-10 nanometers.
4. as described in claim 1 based on the high power radiation source design method for being mutated topological state, it is characterised in that: the step
In rapid S3, by electronics ambient energy density integral, the electron energy that 1keV is utilized under the irradiation device structure, electromagnetic wave are obtained
Radiosity is up to 2 × 1012W/cm2, an order of magnitude is promoted relative to radiosity in hyperbolic Meta Materials.
5. as described in claim 1 based on the high power radiation source design method for being mutated topological state, it is characterised in that: high power
All preparation processing technologys of radiation source pass through the completion of standard semiconductor micro-nano technology technique, and structural body is worked on chip.
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| CN109586042A (en) * | 2018-12-03 | 2019-04-05 | 中国科学技术大学 | A kind of wave absorbing device and preparation method thereof |
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| CN1870206A (en) * | 2004-12-29 | 2006-11-29 | 电灯专利信托有限公司 | Process for producing a radiation source, and radiation source |
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| LONG XIAO等: "Tunable Extremely Ultra-Violet Emitter Based on Threshold-Less Cherenkov Radiation", 《2018 PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM (PIERS-TOYAMA)》 * |
Cited By (2)
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| CN109586042A (en) * | 2018-12-03 | 2019-04-05 | 中国科学技术大学 | A kind of wave absorbing device and preparation method thereof |
| CN109586042B (en) * | 2018-12-03 | 2020-08-28 | 中国科学技术大学 | A kind of wave absorber and preparation method thereof |
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