CN109585685A - Light takes out structure, its production method and luminescent device - Google Patents
Light takes out structure, its production method and luminescent device Download PDFInfo
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- CN109585685A CN109585685A CN201811498138.3A CN201811498138A CN109585685A CN 109585685 A CN109585685 A CN 109585685A CN 201811498138 A CN201811498138 A CN 201811498138A CN 109585685 A CN109585685 A CN 109585685A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The present invention provides a kind of light to take out structure, its production method and luminescent device.Wherein, production method is the following steps are included: provide substrate；Using the first solution, wet process makes the first film layer in substrate, wherein the first solution includes materials A and solvent B；First film layer is dried, first film layer with porous structure is formed, the first film layer with porous structure is that light takes out structure.By in substrate wet process form the film layer of random porous structure, or, structure is taken out using the light that random male-type is further arranged in the random porous structure, such light takes out structure and not only facilitates the light emitting angle uniformity for improving and promoting luminescent device, and also advantageously improves the light efficiency of luminescent device.
Description
Technical field
The present invention relates to light emitting diode fields, take out structure, its production method in particular to a kind of light and shine
Device.
Background technique
Organic Light Emitting Diode (OLED) passes through nearly development in 30 years, achieves on developing material and device structure design
Abundant achievement, OLED is being shown, extensive commercialization is especially had begun in high-end smartphones, lighting area is due to price and longevity
The reason of life etc., market has not yet been formed, but no matter for showing or illuminating, the efficiency of OLED device is all to be improved,
It is limited by device layer structure feature, the lower photon generated of electric current driving only about 20% can smoothly break through injection device
It is captured by human eye, remaining photon all dissipates in device inside, and heat not only wastes electric energy, also influences device lifetime.In recent years
Come, the light emitting diode with quantum dots (QLED) to attract attention by the features such as wide colour gamut, high brightness also layer structure, to
Realize commercialization, it is equally very crucial to improve device efficiency to take out technology by effective light.
Different according to the device portions of modifying interface, light takes out technology and is divided into outer light taking-up technology and interior light taking-up technology.
Wherein, outer light takes out technology mainly by modifying outer substrate surface, inhibits boundary using scattering or convergent beam principle
Face total reflection.Common method has roughing in surface, microlens array, patterned surface film and surface scattering dielectric layer etc..This
A little external structures can only couple the light for sinking into substrate mode.Interior light takes out technology and can then extract such as ITO- organic layer waveguide mode
With the light of surface plasma base meta schema.Outer light takes out technology because of simple process, and can independently process with organic layer and wide
It is general to be applied.And interior light taking-up is related to device inside structure, regulation is relative complex, but the taking-up of interior light can obtain higher device
Part improved efficiency.
But either outer light take out or in light take out, the interface that the prior art is modified mostly use greatly the modes such as photoetching into
Row production realizes that light takes out, though device efficiency can be improved, involves great expense, and due to its regular structure, causes pair
Angle uniformity has no to improve, regardless of being display or lighting area, the consistency of colour developing is all of crucial importance.
Summary of the invention
The main purpose of the present invention is to provide a kind of light to take out structure, its production method and luminescent device, existing to solve
There is the light in technology to take out structure and is difficult to the problem of improving the light-emitting angle uniformity of corresponding device.
To achieve the goals above, according to an aspect of the invention, there is provided a kind of light take out structure production method,
The production method is the following steps are included: provide substrate；Using the first solution, wet process makes the first film layer in substrate, wherein the
One solution includes materials A and solvent B；First film layer is dried, first film layer with porous structure is formed, is had porous
First film layer of structure is that light takes out structure.
Further, after formation has the step of the first film layer of porous structure, production method further include: more having
Material C is set in the first film layer of pore structure, forms the second film layer, part of material C is arranged by porous structure in substrate
On；And the first film layer of removal and the second film layer being arranged on the first film surface, reservation are located at the material C shape in substrate
At bulge-structure, bulge-structure is that light takes out structure.
Further, the thickness of the first film layer be greater than the second film layer thickness, the first film layer with a thickness of 10nm~10 μm.
Further, the first film layer is removed by the way of solvent washing or adhesive tape removing and be arranged in the first film surface
On the second film layer；Preferably, solvent washing is rinsed using the good solvent of the first film layer.
Further, substrate is functional film layer, electrode layer or non-functional carrier；Preferably, functional membrane layer choosing
From in hole injection layer, hole transmission layer, luminescent layer, electron injecting layer, electron transfer layer, hole blocking layer and electronic barrier layer
Any one；Preferably, non-functional carrier is transparent substrate.
Further, solvent B includes the first boiling point solvent, and the first boiling point solvent, which is selected from boiling point and is 80 DEG C~300 DEG C, to be had
One of solvent is a variety of.
Further, solvent B further includes second boiling point solvent, and it is 60 DEG C~120 DEG C that second boiling point solvent, which is selected from boiling point,
One of organic solvent is a variety of；Preferably, the volume ratio of the first boiling point solvent and second boiling point solvent is 95:5 in solvent B
~5:95.
Further, fusing point >=15 DEG C of the first boiling point solvent.
Further, materials A is selected from one of following material or a variety of: high molecular material, oxide nanocrystalline, nanometer
Silver wire, silver ink water, inorganic particulate matter, optic-solidified adhesive water composition, heat-curable glue water composition and collosol and gel.
Further, materials A is selected from one of high molecular material or a variety of, and the molecular weight of high molecular material is not less than
1000, and glass transition temperature Tg≥80℃。
Further, material C is selected from one of following material or a variety of: metal oxide, nitride, nitrogen oxidation are closed
Object, fluoride and metal.
According to the second aspect of the application, a kind of light taking-up structure is provided, which takes out structure using any of the above-described
Kind production method is made.
According in terms of the third of the application, providing a kind of bottom emitting luminescent device, bottom emitting luminescent device include by
Under the supreme non-functional carrier set gradually, semitransparent electrode layer, functional film layer and reflection electrode layer, wherein functional
Film layer includes multiple sub-functionality film layers, and bottom emitting luminescent device further includes that light takes out structure, and light takes out structure positioned at non-functional
Property carrier, semitransparent electrode layer, between two layers of arbitrary neighborhood of functional film layer and reflection electrode layer, or be located at functionality
Between the adjacent sub-functionality film layer of any two of film layer, or positioned at the separate semitransparent electrode layer of non-functional carrier
A side surface on, light take out structure be above-mentioned light take out structure.
Further, light taking-up structure is located at semitransparent electrode layer to any interlayer between reflection electrode layer, and light takes out
The refraction index value of structure is 1.5~2；Alternatively, light takes out structure between non-functional carrier and semitransparent electrode layer,
The refraction index value that light takes out structure is 1.5~1.8；Alternatively, light, which takes out structure, is located at the separate semi-transparent of non-functional carrier
On one side surface of prescribed electrode layer, the refraction index value that light takes out structure is 1~1.5.
According to the 4th of the application the aspect, provide a kind of top emission light-emitting device, top emission light-emitting device include by
Under the supreme non-functional carrier set gradually, reflection electrode layer, functional film layer, semitransparent electrode layer and encapsulated layer, top
Emission light-emitting device further includes that light takes out structure, wherein functional film layer includes multiple sub-functionality film layers, light takes out structure bit
Between any of the above adjacent two layers, it is that above-mentioned light takes out structure that light, which takes out structure,.
Further, encapsulated layer is encapsulation cover plate or film；Preferably, light takes out structure and is located at semitransparent electrode layer to anti-
It penetrates between two layers of arbitrary neighborhood between electrode layer, the refraction index value that light takes out structure is 1.5~2；Alternatively, light takes out structure
Between encapsulated layer and semitransparent electrode, the refraction index value that light takes out structure is 1~1.8.
Apply the technical scheme of the present invention, by substrate wet process form the film layer of random porous structure, alternatively,
Structure is taken out using the light that random male-type is further arranged in the random porous structure, such light takes out structure not
It only helps to improve the light emitting angle uniformity for promoting luminescent device, and also advantageously improves the light efficiency of luminescent device.
Detailed description of the invention
The accompanying drawings constituting a part of this application is used to provide further understanding of the present invention, and of the invention shows
Examples and descriptions thereof are used to explain the present invention for meaning property, does not constitute improper limitations of the present invention.In the accompanying drawings:
Fig. 1 shows the luminous efficiency of the luminescent device of embodiment according to the present invention 1-5 and comparative example 1 and 2 with angle
The comparison result figure of variation.
Specific embodiment
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.Below in conjunction with embodiment, the present invention will be described in detail.
Term is explained:
Functional film layer, the function in functional high molecule material are to play hole injection, hole for device
The film layer or high molecular material of the functions such as transmission, electron injection, electron-transport, luminous, electronic blocking.
Refraction index, the refraction index in the application is not necessarily referring to the refraction index value of bulk material, but the light formed takes
Refraction index value after structure is integrally converted out.For example, the first film layer Hole (air refraction index is 1) and materials A (itself
Refraction index is 1.5) volume ratio 1:1, then the refraction index value of the first film layer is approximately 1.25 at this time.About blend films
Effective refraction index value n of layerEffectivelyApproximate calculation can be done with following formula: nEffectively=f*n1+(1-f)*n2, wherein f is material 1
Volume fraction, the refraction index of material itself are n1；(1-f) is the volume fraction of material 2, and the refraction index of material itself is n2。
The light as used by existing luminescent device, which takes out technology and cannot achieve light-emitting angle, to be kept uniform asking
Topic in a kind of typical embodiment of the application, provides a kind of production side of light taking-up structure to improve this status
Method, the production method is the following steps are included: provide substrate；Using the first solution, wet process makes the first film layer in substrate；To
One film layer is dried, and forms first film layer with porous structure, and the first film layer with porous structure is that light takes out knot
Structure；Wherein, the first solution includes materials A and solvent B.
The production method that above-mentioned light takes out structure, by using the solution of materials A in substrate wet process formed it is random
The film layer of porous structure, this light takes out structure and not only facilitates the angle uniformity for promoting light, and also advantageously improves institute
The light efficiency of the luminescent device of application.
Above-mentioned that first film layer is dried, formation had in the step of the first film layer of porous structure, and dry is specific
Mode is unlimited, is including but not limited to dried by the way of quickly heating or vacuumizing, so that solvent B volatilizees.
Above-mentioned production method is due to being wet process production, and solvent volatilizees the first solution after the drying, is formed random porous
The light of shape takes out structure, and when being subsequently applied in luminescent device, the light for belonging to concave takes out structure.It can improve light efficiency
The angle uniformity of light is promoted simultaneously, and preparation process is simple.
Further, the light of convex, which takes out structure, also may be implemented identical effect.In order to meet wider photophore
The preparation demand of part, in a kind of preferred embodiment, formed it is described there is the step of the first film layer of porous structure after, on
It is further comprising the steps of to state production method: material C is set in the first film layer with porous structure, forms the second film layer,
Middle part material C is arranged in substrate by porous structure；And the second film on the first film layer of removal and the first film surface
Layer retains the material C being located in substrate and forms bulge-structure, which is that light takes out structure, belongs to the light of convex
Take out structure.
In above preferred embodiment, since the first film layer is porous structure, when material C is set on it, the material C of part
It is contacted by porous structure with basal layer, after the second film layer in the first film layer to be removed and the first film surface, with substrate
The light that the C-material of layer contact setting forms convex on the base layer takes out structure.
During the light of above-mentioned convex takes out structure fabrication, the specific thickness of the first film layer and the second film layer does not do special limit
It is fixed, leak down from the porous structure of the first film layer as long as can be realized material C, and in removal, the first film layer can connect
The removal of the second film layer of band is clean.In a kind of preferred embodiment, the thickness of the first film layer is greater than the thickness of the second film layer,
First film layer with a thickness of 10nm~10 μm.The thickness of first film layer is greater than the second film layer conducive to subsequent removing removal.
During the light of above-mentioned convex takes out structure fabrication, the thickness of the second film layer is conducive to subsequent less than the first film layer
The second film layer in first film layer and the first film surface is stripped clean.It is located at appointing for device when the light of the convex takes out structure
When between the functional film layer of meaning two or between electrode layer nand function carrier, since the thickness of each functional film layer only has several receive
Rice arrives nanometers up to a hundred, and the thickness of electrode layer is also only tens of to arrive several hundred nanometers, therefore the thickness of the light taking-up structure of convex is (corresponding
The thickness of second film layer) also within this range, in case biggish fluctuating causes the uneven of other function thicknesses of layers；And work as
The light of the convex takes out structure and is located at other positions, is such as located at the side of the separate device functionality film layer of non-functional carrier
When, thickness can be hundreds of nanometers to a few micrometers, this time, which takes out biggish fluctuating in structure, will not influence each function of device
Property film layer uniformity the light that goes out of device is equally obviously improved and since its size is suitable with the wavelength of light.First film
The selection of the thickness range of layer equally follows mentioned above principle.
Using the first solution in the step of wet process in substrate makes the first film layer, substrate can be divided into functional film
Layer, electrode layer and non-functional carrier.Functional film layer can be selected from hole injection layer, hole transmission layer, luminescent layer, electronics
Any one in implanted layer, electron transfer layer, hole blocking layer and electronic barrier layer；And non-functional carrier, Ke Yixuan
Self-induced transparency substrate, preferably glass or thin polymer film.And the specific method that wet process forms the first film layer includes but not limited to
Spin coating, inkjet printing, slot coated, spraying and coining in any one.
It is above-mentioned that material C is set in the first film layer with porous structure, in the step of forming the second film layer, material is set
The concrete mode of C is unlimited, can be sedimentation, such as CVD (chemical vapor deposition) or PVD (physical vapour deposition (PVD)).
The second film layer in above-mentioned the first film layer of removal and the first film surface, formed convex light take out structure the step of
In, specific removing method can be solvent washing or adhesive tape removing.Preferably, solvent washing is using the good of above-mentioned first film layer
Solvent is rinsed；It should be noted that above-mentioned good solvent should be poor solvent for base material, it will not be to substrate
It damages.
Above-mentioned solvent B is different and different according to the type of materials A, and materials A is dissolved by solvent B.A kind of or more
In kind embodiment, solvent B includes the first boiling point solvent, and the first boiling point solvent is selected from the organic solvent that boiling point is 80 DEG C~300 DEG C
One of or it is a variety of；When the first boiling point solvent boiling point within the above range when, must in wet film after forming a film under conventional wet lay process
Surely contain a certain amount of first boiling point solvent, at this point, it is wet to handle this with the mode of rapidly dry (be such as heated at high temperature or vacuumize)
When film, the first boiling point solvent can be escaped out of film rapidly in wet film, hole be formed, to obtain first film with porous structure
Layer.Preferably, the first boiling point solvent can choose aromatic hydrocarbons, esters, ethers, alcohols and the alcohol ether of boiling point within the above range
Equal organic solvents.
Above-mentioned solvent B can also include that second boiling point is molten on the basis of containing the first boiling point solvent according to actual needs
Agent, second boiling point solvent are selected from one of organic solvent that boiling point is 60 DEG C~120 DEG C or a variety of；Preferably, in solvent B
The volume ratio of first boiling point solvent and second boiling point solvent is 95:5~5:95, more preferably 1:9~8:2.Due to second boiling point
Solvent boiling point is lower, preferentially quickly volatilizees in water-laid film, and system viscosity, which rises rapidly, makes wet film more early be formed, at this point, the
One boiling point solvent is slow due to volatilizing, remained in wet film it is more, equally can be with after the wet film is handled in the way of rapidly drying
Obtain first film layer with porous structure.Specifically, the organic solvent that boiling point is 60 DEG C~120 DEG C includes but are not limited to just
Hexane, hexamethylene, acetone, tetrahydrofuran, toluene and ethyl alcohol etc..
In a kind of preferred embodiment, the fusing point of the first boiling point solvent is more than or equal to 15 DEG C.First is made in wet process
When film layer, under normal circumstances, the relatively low second boiling point solvent preferential volatilization of boiling point；In certain embodiments, second boiling point
Solvent is identical as the boiling point of the first boiling point solvent, and (or the boiling point of second boiling point solvent is higher than the first boiling point solvent, but respectively still exists
In respective boiling spread), and the two volatility is close, while gradually volatilizing.Above-mentioned two situations can all cause the body of solvent B
Be temperature reduction, since the fusing point of the first boiling point solvent is higher, when system temperature drop to it is remaining in its freezing point or wet film
When second boiling point quantity of solvent is not enough to that it is maintained to be distributed in solvent B with liquid state, the solidification of the first boiling point solvent is precipitated.It is subsequent this
The first boiling point solvent solidified a bit is rapidly removed, originally by the region " being emptied " that " solid-state " first boiling point solvent occupies,
Hole is formd in first film layer.Therefore there is different size, the first film layer of quantity and the porous structure of distribution, can lead to
The combination (combination including variety classes or volume) of different the first boiling point solvent and second boiling point solvent is overregulated to obtain.
In one or more embodiments, materials A is selected from one of following material or a variety of: high molecular material, oxidation
Object is nanocrystalline, nano-silver thread, silver ink water, inorganic particulate matter, optic-solidified adhesive water composition, heat-curable glue water composition and colloidal sol
It is solidifying.
In the preparation step of above-mentioned the first film layer (i.e. the light of concave takes out structure) with porous structure, materials A includes
But one of it is not limited to following material or a variety of: high molecular material, oxide nanocrystalline, nano-silver thread, silver ink water, inorganic particulate
Grain object, optic-solidified adhesive water composition, heat-curable glue water composition and collosol and gel.Wherein, high molecular material is functional high score
Sub- material or non-functional high molecular material；In some embodiments, functional high molecule material is selected from polyvinylcarbazole
(PVK), one in poly- (9,9- dioctyl fluorene-CO-N- (4- butyl phenyl) diphenylamines) (TFB), polyvinylpyrrolidone (PVP)
Kind is a variety of, and non-functional high molecular material is selected from polymethyl methacrylate (PMMA), polystyrene (PS), poly- terephthaldehyde
One of sour glycol ester (PET), polycarbonate (PC), polyimides (PI), polyurethane (PU), polyvinyl chloride (PVC) or
It is a variety of.Above-mentioned inorganic particulate matter in oxide particle, nitride particles, oxynitrides particle and fluoride particles one
Kind is a variety of；In some embodiments, the partial size of inorganic particulate matter is 3nm~400nm.It should be noted that above-mentioned photocuring
The selection of glue composition or heat-curable glue water composition is resistant to other subsequent film layer systems of device after only needing to consider solidification
Heating temperature during work, deformation occurs or xanthochromia.
In above-described embodiment, oxide nanocrystalline is that partial size is different from the difference of inorganic particulate matter.Light takes out structure and sets
It sets in the different location of luminescent device, the Particle size requirements of selection are different.When light takes out structure setting in the functional membrane of device
It is preferable to use oxide nanocrystalline when layer adjacent position, partial size is generally in a few nanometers to tens of nanometers, for example, in electron-transport
The light that concave is arranged between layer and luminescent layer takes out structure, and materials A can choose zinc oxide nanocrystalline, to the first of wet process preparation
Film layer is dried rear above-mentioned material A (zinc oxide nanocrystalline) as light and takes out structure reservation in the devices, both plays in this way
The effect of the angle uniformity of light is promoted, and has played the certain effect of the second electron transfer layer, and will not be risen because of its bring
Fu Du and the uniformity for significantly affecting device other function film layer.When light takes out structure setting non-conterminous with functional film layer
Position when it is preferable to use inorganic particulate matter, relatively large partial size is suitable with the wavelength that luminescent layer shines, the scattering to light
Ability is strong, and the effect of improving extraction efficiency and angle uniformity equally may be implemented.
Function in above-mentioned functional high molecule material or non-functional high molecular material is the Neng Gouqi for device
The functions such as inject, transmit to hole.
In further embodiments, materials A is selected from one of non-functional high molecular material or a variety of, above-mentioned macromolecule
The molecular weight of material is not less than 1000, and glass transition temperature Tg≥80℃.Further, material C is in following material
It is one or more: metal oxide, nitride, oxynitrides, fluoride and metal.
It is above-mentioned formed convex light take out structure the step of in, materials A in non-functional high molecular material one
Kind is a variety of, and the molecular weight of above-mentioned high molecular material is not less than 1000, and glass transition temperature Tg>=80 DEG C, control vitrifying
Transition temperature Tg>=80 DEG C are in order to ensure when the second film layer is arranged, the porous structure pattern of the first film layer can be kept, no
Can deformation occurs due to slightly heated, hole cannot be passed through so as to cause the second film material and be deposited in substrate.
Above-mentioned material C can take out the subsequent position being intended in the devices of structure according to the light of the protrusion and rationally be selected
It selects.In a kind of preferred embodiment, material C is selected from one of following material or a variety of: metal oxide, nitride, nitrogen
Oxygen compound, fluoride and metal.It is highly preferred that material is selected from molybdenum oxide (MoO3), nickel oxide (NiO), zinc oxide (ZnO),
Aluminium oxide (Al2O3), indium tin oxide tin indium oxide (ITO), silica (SiO2), AZO (zinc oxide aluminum), titanium dioxide
(TiO2), silicon nitride (Si3N4), silver one of (Ag) and aluminium (Al) or a variety of.It should be noted that material C is to lifter
The contribution of part light-out effect is derived from its bulge-structure pattern itself, which changes the direction of propagation of light, increases
Light is spilled over to the ratio of air, thus increase light extraction efficiency, and since its is not of uniform size, distribution is different, random arrangement benefit
In the luminous angle uniformity of improvement device.
In second of the application typical embodiment, a kind of light taking-up structure is provided, which takes out structure and use
Any of the above-described kind of production method is made.Using the present processes, not only preparation method is simple, but also is formed by light and takes
Structure is random porous structure out, facilitates the angle uniformity for promoting light.In addition, the present processes can be according to actually answering
With demand, the light that can both prepare convex takes out structure, and the light that can also prepare concave takes out structure, and the application
Light takes out the applied widely of structure, can use in multiple positions of device, for example can be used as a part of substrate, or
A part of electrode of substrate is perhaps made in substrate back or can be used as a functional layer of device inside.
In the application in the third typical embodiment, a kind of bottom emitting luminescent device, bottom emitting photophore are provided
Part includes the non-functional carrier, semitransparent electrode layer, functional film layer that light takes out structure, and sets gradually from the bottom to top
And reflection electrode layer, wherein functional film layer includes multiple sub-functionality film layers, which takes out structure and is located at non-functional load
Body, semitransparent electrode layer, between two layers of arbitrary neighborhood of functional film layer and reflection electrode layer, or positioned at functional film layer
Between any two sub-functionality film layer, or a side surface of the separate semitransparent electrode layer positioned at non-functional carrier
On, wherein light takes out structure and is that any of the above-described kind of light takes out structure, can also be with either the light of above-mentioned concave takes out structure
It is the light taking-up structure of above-mentioned convex.
Further, pattern (the referred to light taking-up knot of the light taking-up structure of spill or convex of structure is taken out according to light
Structure), setting position, the difference using material in the devices, the light because obtained from take out structure have different refraction indexs,
Facilitate the light-emitting angle uniformity of promotion bottom emitting luminescent device.It has a wide range of application, and can be set to the above-mentioned more of device
A position.
In certain preferred embodiments, light takes out structure and is located at semitransparent electrode layer to any between reflection electrode layer
Between two layers, i.e., light takes out structure and can be located between semitransparent electrode and functional film layer, or is located at any two subfunction
Property film layer between, or be located between functional film layer and reflection electrode layer, the refractive power of structure taken out positioned at the light of above-mentioned position
Index value is 1.5~2.In one or more embodiments, the light of concave is taken out into structure setting in semitransparent electrode layer to anti-
Any between electrode layer is penetrated between two layers, materials A can be selected from various functional high molecule materials or oxide nanocrystalline,
Or the electrode layer materials such as nano-silver thread, silver paste, ITO (collosol and gel), wherein functional high molecule material and oxidate nano
Crystalline substance has hereinbefore explained that details are not described herein again.In one or more embodiments, by the light of convex take out structure setting in
Semitransparent electrode layer to any between reflection electrode layer between two layers, materials A in non-functional high molecular material one
Kind is a variety of, and the molecular weight of above-mentioned high molecular material is not less than 1000, and glass transition temperature Tg >=80 DEG C；Material C is selected from
Metal oxide, such as molybdenum oxide, nickel oxide, zinc oxide, above-mentioned material C are arranged using the method for CVD or PVD, after processing
The light for foring convex takes out structure, according to its specific location in the devices, while can play hole injection or electronics biography
Defeated equal function affects.
And in certain preferred embodiments, light take out structure be located at non-functional carrier and semitransparent electrode layer it
Between, the refraction index value that light takes out structure is 1.5~1.8, in the position between setting light take out structure and need to control refractive power and refer to
Numerical value the reason of above range be general non-functional carrier refraction index 1.5 or so, the refractive power of semitransparent electrode refers to
Number is 1.8, and the refraction index that light takes out structure is conducive to improve the transmitance of light between the two, and since light takes out structure
With nonplanarity, it can effectively change the light direction of propagation, destruction interference and reflecting electrode and function inside suppression device
The surface plasmon modes light loss at the interface of energy property film layer, to increase light extraction efficiency.
In one or more embodiments, the light of concave is taken out into structure setting in non-functional carrier and translucent electricity
Between the layer of pole, materials A can be selected from above-mentioned non-functional high molecular material, inorganic particulate matter, optic-solidified adhesive water composition and heat
One of solidified glue composition or a variety of mixing.In one or more embodiments, the light of convex is taken out into structure setting
Between non-functional carrier and semitransparent electrode layer, materials A is selected from one of non-functional high molecular material or a variety of,
Material C can then be selected from one of metal oxide, nitride, oxynitrides and fluoride or a variety of.
In certain preferred embodiments, light taking-up structure is located at the separate semitransparent electrode layer of non-functional carrier
On one side surface, the refraction index value that light takes out structure is 1~1.5.In the separate semitransparent electrode layer of non-functional carrier
A side surface on setting light take out structure when, be equivalent to light take out structure between non-functional carrier and air, it is non-
The refraction index of functional vector is generally 1.5 or so, and the refraction index of air is 1 or so, and light takes out the refraction index of structure
It is conducive to improve the transmitance of light between the two.
In the 4th kind of the application typical embodiment, a kind of top emission light-emitting device is provided, which shines
Device includes that light takes out structure, and the non-functional carrier, reflection electrode layer, the functional membrane that set gradually from the bottom to top
Layer, semitransparent electrode layer and encapsulated layer, wherein functional film layer includes multiple sub-functionality film layers, light, which takes out structure, to be located at
Between any of the above adjacent two layers, and it is that above-mentioned light takes out structure that light, which takes out structure,.
Two layers of above-mentioned arbitrary neighborhood includes between two layers of arbitrary neighborhood of multiple sub-functionality film layers.Using the application's
The top emission light-emitting device that above-mentioned light takes out structure has the advantages that light emitting angle uniformity.
Above-mentioned encapsulated layer uses existing encapsulating structure.In a kind of preferred embodiment, encapsulated layer is cap
Plate or film.Film herein refers to film used in the common thin film encapsulation processes of luminescent device, is organic and nothing
The structure that machine stacks, not single polymers.
For the light emitting angle uniformity for further increasing top emission light-emitting device, in a kind of preferred embodiment, light is taken
Structure is located at semitransparent electrode layer between two layers of arbitrary neighborhood between reflection electrode layer out, i.e., light takes out structure and can be located at
Between semitransparent electrode layer and functional film layer, perhaps between any two sub-functionalities film layer or positioned at functional membrane
Between layer and reflection electrode layer, the refraction index value that the light positioned at above-mentioned position takes out structure is 1.5~2.The preferred embodiment
Middle light takes out the selection of the material of structure, takes out structure with light in bottom emitting luminescent device and is located at semitransparent electrode layer to reflecting electricity
The case where between any two layers between the layer of pole, is identical, therefore repeats no more.
In another preferred embodiment, light takes out structure between encapsulated layer and semitransparent electrode, and light takes out knot
The refraction index value of structure is 1~1.8.In another preferred embodiment, light take out structure be located at non-functional carrier and
Between reflection electrode layer, since reflection electrode layer can reflect light, light takes out structure not through light, therefore takes out and tie to light
The refraction index value of structure is not required.
Further illustrate the beneficial effect of the application below in conjunction with specific embodiments.
Embodiment 1
The light of concave takes out structure and is applied to bottom emitting luminescent device:
The N-Methyl pyrrolidone solution of 1wt% polyimides is spun on to the nothing of 0.7mm thickness with the condition of 2500rpm
On alkali white glass, spin coating is finished, and is placed in vacuum oven (the desk-top vacuum oven of DZF), is dried in vacuo 60min at 150 DEG C,
It obtains light and takes out structure, DEKTAK XT type step instrument tests its pit depth about 25nm；
The radio-frequency sputtering 150nm (containing the mask plate drawn convenient for electrode) is provided on the glass that light takes out structure above-mentioned
After ITO (150W, Ar:48sccm), the successively toluene solution (film thickness of spin coating PEDOT:PSS (40nm, Heraeus E100), TFB
30nm), the ethanol solution (film thickness 50nm) of the octane solution (film thickness 30nm) of green quantum dot (CdSe/CdS) and ZnO nano crystalline substance
Afterwards, 100nm film thickness Ag is deposited, bottom emitting QLED device is obtained after encapsulation.
Embodiment 2
The light of convex takes out structure and is applied to bottom emitting luminescent device:
Granules of polystyrene is dissolved in methyl phenyl ethers anisole, the solution of 5%wt is configured to, with the revolving speed of 1500rpm in alkali-free
Substrate is transferred to radio-frequency sputtering cavity, in 150W after being dried in vacuo 30min at 100 DEG C by spin-coating film on white glass
1000s, target ITO are sputtered under the argon flow of 48sccm, sputtering finishes, and substrate is rinsed with tetrahydrofuran solvent, will be gathered
Styrene materials remove, and light is obtained after dry and takes out structure, it is about 50nm that step instrument, which measures raised highest point height,；
The radio-frequency sputtering 150nm (containing the mask plate drawn convenient for electrode) is provided on the substrate that light takes out structure above-mentioned
After ITO (150W, Ar:48sccm), the successively toluene solution (film thickness of spin coating PEDOT:PSS (40nm, Heraeus E100), TFB
30nm), the ethanol solution (film thickness 50nm) of the octane solution (film thickness 30nm) of green quantum dot (CdSe/CdS) and ZnO nano crystalline substance
Afterwards, 100nm film thickness Ag is deposited, bottom emitting QLED device is obtained after encapsulation.
Embodiment 3
The light of concave takes out structure and is applied to top emission light-emitting device:
The N-Methyl pyrrolidone solution of 1wt% polyimides is spun on to the nothing of 0.7mm thickness with the condition of 2500rpm
On alkali white glass, spin coating is finished, and is placed in vacuum oven (the desk-top vacuum oven of DZF), is dried in vacuo 60min at 150 DEG C,
It obtains light and takes out structure；
The successively radio-frequency sputtering (containing the mask plate drawn convenient for electrode) is provided on the glass that light takes out structure above-mentioned
100nm Ag (150W, Ar:48sccm) and 15nm ITO (150W, Ar:48sccm), then spin coating PEDOT:PSS (film thickness 40nm,
Heraeus E100), the toluene solution (film thickness 30nm) of TFB, green quantum dot (CdSe/CdS) octane solution (film thickness
30nm) and after the ethanol solution (50nm) of ZnO nano crystalline substance, 20nm film thickness Ag is deposited, top emitting QLED device is obtained after encapsulation.
Embodiment 4
The light of convex takes out structure and is applied to top emission light-emitting device:
Granules of polystyrene is dissolved in methyl phenyl ethers anisole, the solution of 5%wt is configured to, with the revolving speed of 1500rpm in alkali-free
Substrate is transferred to radio-frequency sputtering cavity, in 150W after being dried in vacuo 30min at 100 DEG C by spin-coating film on white glass
1000s, target ITO are sputtered under the argon flow of 48sccm, sputtering finishes, and substrate is rinsed with tetrahydrofuran solvent, will be gathered
Styrene materials remove, and light is obtained after dry and takes out structure；
The successively radio-frequency sputtering (containing the mask plate drawn convenient for electrode) is provided on the substrate that light takes out structure above-mentioned
100nm Ag (150W, Ar:48sccm) and 15nm ITO (150W, Ar:48sccm), then spin coating PEDOT:PSS (film thickness 40nm,
Heraeus E100), the toluene solution (film thickness 30nm) of TFB, green quantum dot (CdSe/CdS) octane solution (film thickness
30nm) and after the ethanol solution (film thickness 50nm) of ZnO, 20nm film thickness Ag is deposited, top emitting QLED device is obtained after encapsulation.
Embodiment 5-26 prepares with reference to above-described embodiment, and raw material used in each step of embodiment 1-26 is shown in Tables 1 and 2,
The preparation condition of each step is shown in Table 3.Wherein, embodiment 1 and 3 is that spill light takes out the making step of structure and the system of corresponding device
Standby step, embodiment 2 and 4 are the preparation step that convex light takes out structure and corresponding device.In embodiment 5-26, odd number embodiment
Structure is taken out for spill light, even number embodiment is that convex light takes out structure, and embodiment 5-16 is top emission light-emitting device, embodiment
17-26 is bottom emitting luminescent device.
It should be noted that in the production method of above-mentioned convex shape, using dissolved material A's early period when materials A removes
Solvent B (or other pairs of materials As solvable but insoluble to material C solvent) carries out elution or adhesive tape directly removes, in table no longer
Specified otherwise.
Table 1:
Table 2: raw materials used physical property in table 1
Table 3: the preparation condition of each embodiment
Further, since position of the bottom emitting substrate of glass far from each functional layer of device is an important setting concave, convex light
The position for taking out structure prior to all processing procedures, therefore is arranged following example 27 and 28 and (is shown in Table 4 in the manufacturing process of device
With table 5).
Embodiment 27 and 28 according to table 4 and 5 manufacturing conditions complete light take out structure production after, in the another of glass
Side successively makes transparent electrode, functional layer and reflecting electrode, is finally completed the production of bottom emitting device.
Table 4:
Table 5:
Comparative example 1
(contain the mask plate drawn convenient for electrode) on 0.7mm glass, radio-frequency sputtering 150nm ITO (150W, Ar:
After 48sccm), successively spin coating PEDOT:PSS (40nm, Heraeus E100), the toluene solution (30nm) of TFB, green quantum dot
(CdSe/CdS) after the ethanol solution (50nm) of octane solution (30nm) and ZnO, 100nm Ag is deposited, obtains after encapsulation and sends out on earth
Penetrate QLED device.
Comparative example 2
On 0.7mm glass (contain convenient for electrode draw mask plate), successively radio-frequency sputtering 100nm Ag (150W, Ar:
48sccm) and 15nm ITO (150W, Ar:48sccm), then the first of spin coating PEDOT:PSS (40nm, Heraeus E100), TFB
After the ethanol solution (50nm) of benzole soln (30nm), the octane solution (30nm) of green quantum dot (CdSe/CdS) and ZnO, vapor deposition
The Ag of 20nm thickness obtains top emitting QLED device after encapsulation.
Test:
To the luminescent device of above-mentioned comparative example 1,2 and embodiment 1-5 with PR670 (photo research) in 3mA/cm2
Current density under test the external quantum efficiency EQE (testing result is shown in Table 6) of device, camera lens is located at the front of device luminous zone
(define device at this time and be located at zero angle), by rotating platform, the angle with 10 ° of step adjuster part light-emitting surface and camera lens is
0-80 ° (at 90 ° lamp piece straight line approximate with camera lens, camera lens obviously can not focus light-emitting surface, so being unable to test), test
The light extraction efficiency of different angle obtains Fig. 1 after normalized.
Table 6:
| Number | External quantum efficiency EQE (%) |
| Comparative example 1 | 8.8 |
| Comparative example 2 | 7.5 |
| Embodiment 1 | 13.3 |
| Embodiment 2 | 14.1 |
| Embodiment 3 | 9.5 |
| Embodiment 4 | 9.7 |
| Embodiment 5 | 10.1 |
It will be seen from figure 1 that no matter in bottom emitting luminescent device or top emission light-emitting device adding the preparation of the application
Light that method obtains takes out structure, and with the variation of angle, efficiency downward trend slows down, i.e., the light of the application take out structure and its
Preparation method not only can effectively promote the illumination effect of device, and can also improve device different angle goes out light, reduce angle
Dependence.
In the top emission light-emitting device of above-described embodiment 6-16, the difference of the position of structure in the devices is taken out according to light,
The light male or female of the application takes out structure, can be set between substrate glasses and ito anode layer, also can be set
It between ito anode and hole injection layer, can also be arranged between electron transfer layer and reflection electrode layer, be arranged in these positions
When, light, which takes out structure, can directly improve the light that goes out of different angle, promotion light-emitting uniformity.
In the bottom emitting luminescent device of above-described embodiment 17-26, the difference of the position of structure in the devices is taken out according to light,
The light male or female of the application takes out structure, can be set between substrate glasses and reflection electrode layer, also can be set
Between reflection electrode layer and hole injection layer, it can also be arranged between electron transfer layer and semitransparent electrode layer, at these
When position is arranged, light, which takes out structure, can directly improve the light that goes out of different angle, promotion light-emitting uniformity.
In addition, either in bottom emitting luminescent device, or in top emission light-emitting device, light male or female is taken
Out structure can also be arranged between hole injection layer and hole transmission layer, between hole transmission layer and quantum dot light emitting layer and
Between quantum dot light emitting layer and electron transfer layer, when being arranged between these functional layers, the thickness that light takes out structure is opposite
It is smaller, though the influence to optical propagation direction is smaller, its improvement to the improvement of device light-out effect from interfacial contact, load
Flow the improvement of sub- injection efficiency and transmission performance.
It can be seen from the above description that the above embodiments of the present invention realized the following chievements: by base
Wet process forms the film layer of random porous structure on bottom, alternatively, being further arranged randomly using the random porous structure
The light of male-type then takes out structure, and the light emitting angle that such light taking-up structure not only facilitates promotion luminescent device is uniform
Property, and also advantageously improve the light efficiency of luminescent device.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (16)
1. the production method that a kind of light takes out structure, which is characterized in that the production method the following steps are included:
Substrate is provided；
Using the first solution, wet process makes the first film layer on the substrate, wherein first solution includes materials A and solvent
B；
First film layer is dried, first film layer with porous structure, first with porous structure are formed
Film layer is that the light takes out structure.
2. manufacturing method according to claim 1, which is characterized in that forming first film layer with porous structure
The step of after, the production method further include:
Material C is set in first film layer with porous structure, forms the second film layer, part of material C is logical
Cross the porous structure setting on the substrate；And
The second film layer for removing first film layer and being arranged on first film surface retains and is located in the substrate
The material C form bulge-structure, the bulge-structure is that the light takes out structure.
3. production method according to claim 2, which is characterized in that the thickness of first film layer is greater than second film
Layer thickness, first film layer with a thickness of 10nm~10 μm.
4. production method according to claim 2, which is characterized in that removed by the way of solvent washing or adhesive tape removing
First film layer and the second film layer being arranged on first film surface；Preferably, described in the solvent washing uses
The good solvent of first film layer is rinsed.
5. production method according to any one of claims 1 to 4, which is characterized in that the substrate is functional film layer, electrode
Layer or non-functional carrier；
Preferably, the functional membrane layer choosing is from hole injection layer, hole transmission layer, luminescent layer, electron injecting layer, electron-transport
Any one in layer, hole blocking layer and electronic barrier layer；
Preferably, the non-functional carrier is transparent substrate.
6. production method according to any one of claims 1 to 4, which is characterized in that the solvent B includes that the first boiling point is molten
Agent, first boiling point solvent are selected from one of organic solvent that boiling point is 80 DEG C~300 DEG C or a variety of.
7. production method according to claim 6, which is characterized in that the solvent B further includes second boiling point solvent, described
Second boiling point solvent is selected from one of organic solvent that boiling point is 60 DEG C~120 DEG C or a variety of；Preferably, in the solvent B
The volume ratio of first boiling point solvent and the second boiling point solvent is 95:5~5:95.
8. production method according to claim 6, which is characterized in that fusing point >=15 DEG C of first boiling point solvent.
9. manufacturing method according to claim 1, which is characterized in that the materials A be selected from one of following material or
It is a variety of: high molecular material, oxide nanocrystalline, nano-silver thread, silver ink water, inorganic particulate matter, optic-solidified adhesive water composition, thermosetting
Tensol composition and collosol and gel.
10. production method according to claim 2, which is characterized in that the materials A is selected from one of high molecular material
Or it is a variety of, the molecular weight of the high molecular material is not less than 1000, and glass transition temperature Tg≥80℃。
11. according to any production method of claim 2 or 10, which is characterized in that the material C is in following material
It is one or more: metal oxide, nitride, oxynitrides, fluoride and metal.
12. a kind of light takes out structure, which is characterized in that the light takes out structure using any system of claim 1 to 11
It is made as method.
13. a kind of bottom emitting luminescent device, the bottom emitting luminescent device include set gradually from the bottom to top it is non-functional
Carrier, semitransparent electrode layer, functional film layer and reflection electrode layer, wherein the functional membrane layer includes multiple sub-functionality films
Layer, the bottom emitting luminescent device further include that light takes out structure, and the light takes out structure and is located at the non-functional carrier, institute
Between two layers of arbitrary neighborhood for stating semitransparent electrode layer, the functional film layer and the reflection electrode layer, or it is located at described
Between the adjacent sub-functionality film layer of any two of functional film layer, or positioned at the remote of the non-functional carrier
On a side surface from the semitransparent electrode layer, which is characterized in that it is light described in claim 12 that the light, which takes out structure,
Take out structure.
14. bottom emitting luminescent device according to claim 13, which is characterized in that
The light takes out structure and is located at the semitransparent electrode layer to any interlayer between the reflection electrode layer, and the light takes
The refraction index value of structure is 1.5~2 out；
Alternatively, the light takes out structure between the non-functional carrier and the semitransparent electrode layer, the light is taken
The refraction index value of structure is 1.5~1.8 out；
Alternatively, the light takes out the side surface far from the semitransparent electrode layer that structure is located at the non-functional carrier
On, the refraction index value that the light takes out structure is 1~1.5.
15. a kind of top emission light-emitting device, the top emission light-emitting device include set gradually from the bottom to top it is non-functional
Carrier, reflection electrode layer, functional film layer, semitransparent electrode layer and encapsulated layer, the top emission light-emitting device further include that light takes
Structure out, wherein the functional membrane layer includes multiple sub-functionality film layers, it is adjacent that the light taking-up structure is located at any of the above
Between two layers, which is characterized in that it is that light described in claim 12 takes out structure that the light, which takes out structure,.
16. top emission light-emitting device according to claim 15, which is characterized in that the encapsulated layer is encapsulation cover plate or thin
Film；
Preferably, the light taking-up structure is located at the semitransparent electrode layer to the arbitrary neighborhood two between the reflection electrode layer
Between layer, the refraction index value that the light takes out structure is 1.5~2；
Alternatively, the light takes out structure between the encapsulated layer and the semitransparent electrode, the light takes out the folding of structure
Optical index value is 1~1.8.
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| CN109585685B (en) | 2021-06-01 |
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