CN105742510A - Organic electroluminescent device and manufacturing method thereof - Google Patents
Organic electroluminescent device and manufacturing method thereof Download PDFInfo
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- CN105742510A CN105742510A CN201410765364.9A CN201410765364A CN105742510A CN 105742510 A CN105742510 A CN 105742510A CN 201410765364 A CN201410765364 A CN 201410765364A CN 105742510 A CN105742510 A CN 105742510A
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Abstract
The invention relates to an organic electroluminescent device and a manufacturing method thereof. The device comprises a substrate and an organic electroluminescence unit arranged on the substrate, wherein the organic electroluminescence unit comprises a first electrode layer, an organic luminescent layer and a second electrode layer which are sequentially stacked, the first electrode layer is arranged on the substrate, and the first electrode layer comprises a low refractive index conductive material and high refractive index scattering particles doped in the low refractive index conductive material. According to the device, the first electrode layer employs the low refractive index conductive material doped with the high refractive index scattering particles, so refractive indexes of the layers realize mutual matching, and thereby light emitting efficiency is improved.
Description
Technical field
The present invention relates to field of organic electroluminescence, be specifically related to high organic electroluminescence device of a kind of smooth extraction efficiency and preparation method thereof.
Background technology
Through the development of nearly 30 years, (English full name is OrganicLightEmittingDevice to organic electroluminescence device, referred to as OLED) as illumination of future generation and Display Technique, have that colour gamut width, response be fast, wide viewing angle, pollution-free, high-contrast, the advantage such as planarization, in illumination and display, obtain a degree of application.Typical organic electroluminescence generally comprises transparency carrier, the first transparency electrode, the second electrode and is arranged on two interelectrode organic luminous layers.The refractive index of each layer respectively substrate 1.5, the first electrode 1.8, organic luminous layer 1.8, owing to the refractive index of substrate and the first electrode is not mated, light beam is totally reflected between the first electrode and substrate so that the light beam of generation is limited in device, so that device efficiency performance is low.
The method improving light extraction efficiency has following three kinds of modes: improve substrate light taking-up technology；Suppress ITO/ organic layer waveguide mode technology；Microcavity resonance technique (OLED light takes out side and arranges a translucent metal film).Improve substrate light and take out technology, especially it is coated with scattering layer (conductive layer) and recycles the light sinking in substrate waveguide pattern by scattering film (light taking-up film), substrate-air critical surface is made to occur the light of total reflection can change direction again from substrate injection by changing photon random orbit, thus improving total light extraction efficiency.
CN200510124370.7 reports by adding the additional floor height index layer of the diffraction grating layer being made up of high low-index material between substrate and the first electrode, changed the light path of total reflection light beam by optical grating diffraction, improve device light extraction efficiency.This scheme complicated process of preparation, implements difficulty.
CN102299266A includes substrate and the manufacture method of organic electroluminescence devices, including transparent substrates, has scattering layer at least side of transparent substrates, and described scattering layer is by TiO2、SiO2Or the nanoparticle of ZnO is constituted, the inner side of transparent substrates is connected with electrode.The refractive index of this scattering layer substrate is 1.5, bad with the refractive index match of organic luminous layer, and light loss is still relatively larger, additionally, this scheme complex manufacturing technology.
Summary of the invention
For this, to be solved by this invention is can not prepare refractive index between each layer by simple process to be mutually matched thus the problem that improves light extraction efficiency OLED, a kind of organic electroluminescence device is provided, what its first electrode layer adopted is low-refraction conductive material doping high index of refraction scattering particles, refractive index between each layer is made to be mutually matched, thus improve the light extraction efficiency of device, and preparation technology is simple.
The preparation method that the present invention also provides for above-mentioned organic electroluminescence device.
For solving above-mentioned technical problem, the technical solution used in the present invention is as follows:
A kind of organic electroluminescence device, including substrate, the organic electroluminescence cell being arranged on substrate, described organic electroluminescence cell includes stacking gradually the first electrode layer of setting, organic luminous layer and the second electrode lay, and described first electrode layer is arranged on the substrate；Described first electrode layer includes low-refraction conductive material and the high index of refraction scattering particles being entrained in described low-refraction conductive material.
Along away from described orientation substrate, the distributed density in described low-refraction conductive material of the high index of refraction scattering particles in described first electrode layer gradually rises.
Described high index of refraction scattering particles doping mass ratio in low-refraction conductive material is 0.01%-50%.
The refractive index of described first electrode layer is 1.4-1.8.
Described low-refraction conductive material is PEDOT:PSS.
High index of refraction scattering particles are the combination of a kind of or at least two in titanium dioxide, silicon oxide, magnesium oxide, zirconium oxide, zinc sulfide, titanium oxide, aluminium oxide, zinc oxide, silicon nitride.
The preparation method of a kind of organic electroluminescence device, comprises the steps:
S1, on substrate deposit low-refraction conductive material formed low-refraction conductive layer；
S2, forming doped layer on described low-refraction conductive layer, described doped layer includes low-refraction conductive material and the high index of refraction scattering particles being entrained in described low-refraction conductive material；
S3, toast described low-refraction conductive layer and described doped layer, form the first electrode layer；
S4, formation organic luminous layer and the second electrode lay, encapsulation on described first electrode layer, obtain OLED.
The particle diameter of described high index of refraction scattering particles is 0.05-2 μm.
The thickness of described low-refraction conductive layer is 50-2000nm, it is preferable that 100-800nm, and the thickness of described doped layer is 50-2000nm, it is preferable that 100-800nm.
The technique scheme of the present invention has the advantage that compared to existing technology
Organic electroluminescence device of the present invention, on substrate substrate, what the first electrode layer adopted is low-refraction conductive material doping high index of refraction scattering particles, and along away from described orientation substrate, described high index of refraction scattering particles distributed density in described low-refraction conductive material gradually rises, the refractive index making the first electrode layer is 1.4-1.8, makes refractive index between each layer be mutually matched, thus improve the light extraction efficiency of device.First electrode layer of the organic electroluminescence device of the present invention is provided with scattering particles, by scattered beam, decreases the generation of light total reflection, improve device light extraction efficiency, simplify processing technology, reduce device production cost.
Accompanying drawing explanation
In order to make present disclosure be more likely to be clearly understood, below according to specific embodiments of the invention and in conjunction with accompanying drawing, the present invention is further detailed explanation, wherein
Fig. 1 is the structural representation of device in organic electroluminescence device preparation flow of the present invention.
Fig. 2-1 to Fig. 2-4 is the preparation process schematic diagram of organic electroluminescence device of the present invention.
Fig. 3 is the optical path change figure of organic electroluminescence device of the present invention.
In figure, accompanying drawing labelling is expressed as: 1-substrate, 2-low-refraction conductive layer, 3-doped layer, 4-the first electrode layer, 5-organic luminous layer, 6-the second electrode lay.
Detailed description of the invention
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiments of the present invention are described in further detail.
The present invention can be embodied in many different forms, and should not be construed as limited to embodiment set forth herein.On the contrary, it is provided that these embodiments so that the disclosure will be thorough and complete, and the design of the present invention being fully conveyed to those skilled in the art, the present invention will only be defined by the appended claims.In the accompanying drawings, for clarity, the size in layer and region and relative size can be exaggerated.It should be appreciated that when being referred to as " formation " or " being arranged on " another element " going up " when element such as layer, region or substrate, this element can be arranged directly on another element described, or can also there is intermediary element.On the contrary, when element is referred to as on " being formed directly into " or " being set directly at " another element, it is absent from intermediary element.
The present invention provides a kind of organic electroluminescence device, as shown in Figure 1, a kind of organic electroluminescence device, including substrate 1, organic electroluminescence cell on substrate 1 is set, described organic electroluminescence cell includes stacking gradually the first electrode layer 4 of setting, organic luminous layer 5 and the second electrode lay 6, and described first electrode layer 4 is arranged on described substrate 1；Described first electrode layer 4 includes low-refraction conductive material and the high index of refraction scattering particles being entrained in described low-refraction conductive material.
Along away from described substrate 1 direction, the distributed density in described low-refraction conductive material of the high index of refraction scattering particles in described first electrode layer 4 gradually rises.
Described high index of refraction scattering particles doping mass ratio in low-refraction conductive material is 0.01%-50%.The refractive index of described first electrode layer 4 is 1.4-1.8.Low-refraction conductive material is PEDOT:PSS.Described high index of refraction scattering particles are the combination of a kind of or at least two in titanium dioxide, silicon oxide, magnesium oxide, zirconium oxide, zinc sulfide, titanium oxide, aluminium oxide, zinc oxide, silicon nitride.
The preparation method of a kind of described organic electroluminescence device, comprises the steps:
S1, on substrate 1 deposition low-refraction conductive material form low-refraction conductive layer 2；
S2, forming doped layer 3 on described low-refraction conductive layer 2, described doped layer 3 includes low-refraction conductive material and the high index of refraction scattering particles being entrained in described low-refraction conductive material；
S3, under 150-500 DEG C of condition, toast described low-refraction conductive layer 2 and described doped layer 3, form the first electrode layer 4；
S4, formation organic luminous layer 5 and the second electrode lay 6, encapsulation on described first electrode layer 4, obtain OLED.
The particle diameter of described high index of refraction scattering particles is 0.05-2 μm.The thickness of described low-refraction conductive layer 2 is 50-2000nm, it is preferable that 100-800nm, and the thickness of described doped layer 3 is 50-2000nm, it is preferable that 100-800nm.
Low-refraction conductive material of the present invention is PEDOT:PSS is the aqueous dispersion of a kind of intrinsic conducting polymer, and outward appearance is navy blue liquid.Chemically seeing on composition, it, based on poly-(vinyl dioxy thiophene phenol)/poly-(styrene sulfonic acid), is generally abbreviated as PEDOT/PSS.PEDOT/PSS is the complex of a kind of polymer.Its structure is as follows:
The PEDOT/PSS that the present invention adopts is purchased from Shanghai Heraeus Industrial Technology Materials Co., Ltd..
The index path of a kind of organic electroluminescence device of the present invention is as shown in Figure 3, first electrode layer 4 of the organic electroluminescence device of the present invention is provided with scattering particles, pass through scattered beam, decrease the generation of light total reflection, improve raising device light extraction efficiency, simplify processing technology, reduce device production cost.
The improvement of the present invention is in that the first electrode layer 4 have employed low-refraction conductive material and prepared by the high index of refraction scattering particles being entrained in described low-refraction conductive material, material and thickness that substrate 1, organic luminous layer 5 and the second electrode lay 6 adopt do not have particular/special requirement, being well known to those of ordinary skill in the art, the material of employing is also material commonly used in the art.Again repeat no more.
Embodiment 1
In the present embodiment, described high index of refraction scattering particles doping mass ratio in low-refraction conductive material is 0.01%.Low-refraction conductive material is PEDOT:PSS.Described high index of refraction scattering particles are titanium dioxide.
The preparation method of organic electroluminescence device (device 1), comprises the steps:
S1, on substrate 1 deposition low-refraction conductive material form low-refraction conductive layer 2；The thickness of described low-refraction conductive layer 2 is 50nm；
S2, forming doped layer 3 on described low-refraction conductive layer 2, described doped layer 3 includes low-refraction conductive material and the particle diameter being entrained in described low-refraction conductive material is 0.05-1 μm of high index of refraction scattering particles；The thickness of described doped layer 3 is 500nm；
S3, under 150 DEG C of conditions, toast described low-refraction conductive layer 2 and described doped layer 3, form the first electrode layer 4；
S4, formation organic luminous layer 5 and the second electrode lay 6, encapsulation on described first electrode layer 4, obtain OLED.
Embodiment 2
In the present embodiment, described high index of refraction scattering particles doping mass ratio in low-refraction conductive material is 50%.Low-refraction conductive material is PEDOT:PSS.Described high index of refraction scattering particles are silicon oxide.
The preparation method of a kind of described organic electroluminescence device, comprises the steps:
S1, on substrate 1 deposition low-refraction conductive material form low-refraction conductive layer 2；The thickness of described low-refraction conductive layer 2 is 500nm；
S2, forming doped layer 3 on described low-refraction conductive layer 2, described doped layer 3 includes low-refraction conductive material and the particle diameter being entrained in described low-refraction conductive material is 1-2 μm of high index of refraction scattering particles；The thickness of described doped layer 3 is 2000nm；
S3, under 200 DEG C of conditions, toast described low-refraction conductive layer 2 and described doped layer 3, form the first electrode layer 4；
S4, formation organic luminous layer 5 and the second electrode lay 6, encapsulation on described first electrode layer 4, obtain OLED.
Fig. 3 is the optical path change figure of device 1, owing to being provided with scattering particles in the first electrode layer 4, by scattered beam, decreases the generation of light total reflection, improves raising device light extraction efficiency, simplify processing technology, reduce device production cost.
Embodiment 3
In the present embodiment, described high index of refraction scattering particles doping mass ratio in low-refraction conductive material is 30%.Low-refraction conductive material is PEDOT:PSS.Described high index of refraction scattering particles are magnesium oxide.
The preparation method of a kind of described organic electroluminescence device, comprises the steps:
S1, on substrate 1 deposition low-refraction conductive material form low-refraction conductive layer 2；The thickness of described low-refraction conductive layer 2 is 2000nm；
S2, forming doped layer 3 on described low-refraction conductive layer 2, described doped layer 3 includes low-refraction conductive material and the particle diameter being entrained in described low-refraction conductive material is 0.1-1 μm of high index of refraction scattering particles；The thickness of described doped layer 3 is 2000nm；
S3, under 300 DEG C of conditions, toast described low-refraction conductive layer 2 and described doped layer 3, form the first electrode layer 4；
S4, formation organic luminous layer 5 and the second electrode lay 6, encapsulation on described first electrode layer 4, obtain OLED.
Embodiment 4
In the present embodiment, described high index of refraction scattering particles doping mass ratio in low-refraction conductive material is 15%.Low-refraction conductive material is PEDOT:PSS.Described high index of refraction scattering particles are zirconium oxide.
The preparation method of a kind of described organic electroluminescence device, comprises the steps:
S1, on substrate 1 deposition low-refraction conductive material form low-refraction conductive layer 2；The thickness of described low-refraction conductive layer 2 is 1000nm；
S2, forming doped layer 3 on described low-refraction conductive layer 2, described doped layer 3 includes low-refraction conductive material and the particle diameter being entrained in described low-refraction conductive material is 0.5-1.5 μm of high index of refraction scattering particles；The thickness of described doped layer 3 is 1500nm；
S3, under 500 DEG C of conditions, toast described low-refraction conductive layer 2 and described doped layer 3, form the first electrode layer 4；
S4, formation organic luminous layer 5 and the second electrode lay 6, encapsulation on described first electrode layer 4, obtain OLED.
Obviously, above-described embodiment is only for clearly demonstrating example, and is not the restriction to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here without also cannot all of embodiment be given exhaustive.And the apparent change thus extended out or variation are still among protection scope of the present invention.
Claims (10)
1. an organic electroluminescence device, including substrate (1), the organic electroluminescence cell being arranged on substrate, described organic electroluminescence cell includes stacking gradually first electrode layer (4) of setting, organic luminous layer (5) and the second electrode lay (6), and described first electrode layer is arranged on described substrate (1)；It is characterized in that, described first electrode layer (4) includes low-refraction conductive material and the high index of refraction scattering particles being entrained in described low-refraction conductive material.
2. organic electroluminescence device according to claim 1, it is characterized in that, along away from described substrate (1) direction, the distributed density in described low-refraction conductive material of the high index of refraction scattering particles in described first electrode layer (4) gradually rises.
3. organic electroluminescence device according to claim 1, it is characterised in that described high index of refraction scattering particles doping mass ratio in low-refraction conductive material is 0.01%-50%.
4. organic electroluminescence device according to claim 1, it is characterised in that the refractive index of described first electrode layer (4) is 1.4-1.8.
5. organic electroluminescence device according to claim 4, it is characterised in that described low-refraction conductive material is PEDOT:PSS.
6. organic electroluminescence device according to claim 1, it is characterized in that, high index of refraction scattering particles are the combination of a kind of or at least two in titanium dioxide, silicon oxide, magnesium oxide, zirconium oxide, zinc sulfide, titanium oxide, aluminium oxide, zinc oxide, silicon nitride.
7. the preparation method of an organic electroluminescence device, it is characterised in that comprise the steps:
S1, form low-refraction conductive layer (2) at substrate (1) upper deposition low-refraction conductive material；
S2, forming doped layer (3) on described low-refraction conductive layer (2), described doped layer (3) includes low-refraction conductive material and the high index of refraction scattering particles being entrained in described low-refraction conductive material；
S3, toast described low-refraction conductive layer (2) and described doped layer (3), form the first electrode layer (4)；
S4, on described first electrode layer (4), form organic luminous layer (5) and the second electrode lay (6), encapsulation, obtain OLED.
8. organic electroluminescence device according to claim 7, it is characterised in that the particle diameter of described high index of refraction scattering particles is 0.05-2 μm.
9. organic electroluminescence device according to claim 8, it is characterised in that the thickness of described low-refraction conductive layer (2) is 50-2000nm, and the thickness of described doped layer (3) is 50-2000nm.
10. organic electroluminescence device according to claim 9, it is characterised in that the thickness of described low-refraction conductive layer (2) is 100-800nm, and the thickness of described doped layer (3) is 100-800nm.
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| CN109244265A (en) * | 2017-07-11 | 2019-01-18 | 乐金显示有限公司 | Organic Light Emitting Diode and the method for manufacturing it |
| CN109390478A (en) * | 2017-08-07 | 2019-02-26 | 固安翌光科技有限公司 | A kind of organic electroluminescence device |
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Application publication date: 20160706 |