CN109582076B - Reference current source - Google Patents

Reference current source Download PDF

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Publication number
CN109582076B
CN109582076B CN201910019520.XA CN201910019520A CN109582076B CN 109582076 B CN109582076 B CN 109582076B CN 201910019520 A CN201910019520 A CN 201910019520A CN 109582076 B CN109582076 B CN 109582076B
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transistor
voltage
electrically connected
resistor
reference current
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CN109582076A (en
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王鹏
张广振
蔡杰杰
罗鹏
杨晓
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Shanghai Sinomcu Microelectronics Co ltd
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Shanghai Sinomcu Microelectronics Co ltd
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

The present disclosure relates to a reference current source comprising: the temperature-changing resistor module is used for providing a resistor which changes along with temperature, and a first end of the temperature-changing resistor module is electrically connected to a first voltage; the first end of the first transistor is electrically connected with the second voltage, the second end of the first transistor is electrically connected with the first voltage, the third end of the first transistor is electrically connected with the second end of the variable temperature resistance module, and the first end of the first transistor is used for outputting reference current according to the resistance of the variable temperature resistance module. According to the reference current source, the temperature-dependent resistor is generated through the temperature-dependent resistor module, and the first transistor outputs the reference current with zero temperature coefficient by utilizing the temperature-dependent resistor. The reference current source obtained through the method has the advantages of high output reference current precision and stable operation.

Description

Reference current source
Technical Field
The present disclosure relates to the field of integrated circuit technologies, and in particular, to a reference current source.
Background
Reference current sources refer to high precision, low temperature coefficient current sources used in analog integrated circuits as current references for other circuits. The current source is used as a key circuit unit of the analog integrated circuit and widely applied to an operational amplifier, an A/D converter and a D/A converter.
However, the reference current source in the prior art often outputs a reference current with low precision due to the influence of factors such as working voltage, temperature and the like, so that the precision and stability of the whole integrated circuit system are directly influenced.
Therefore, it is highly demanded to provide a stable reference current source which is high in accuracy and is not affected by an operating voltage, a temperature, or the like.
Disclosure of Invention
In view of this, the present disclosure proposes a reference current source including:
the temperature-changing resistor module is used for providing a resistor which changes along with temperature, and a first end of the temperature-changing resistor module is electrically connected to a first voltage;
a first transistor, a first end of the first transistor is electrically connected with a second voltage, a second end of the first transistor is electrically connected with the first voltage, a third end of the first transistor is electrically connected with a second end of the temperature-changing resistor module,
the first end of the first transistor is used for outputting reference current according to the resistance of the temperature-changing resistance module.
In one possible implementation, the reference current source further includes:
a second transistor, a first end of which is electrically connected to the second voltage, and a second end of which is electrically connected to a third end;
a third transistor, a first end and a second end of the third transistor are electrically connected to the second end and the third end of the second transistor, and a third end of the third transistor is electrically connected to the first voltage;
wherein the temperature-changing resistor module comprises a fourth transistor, the first end of the fourth transistor is electrically connected with the third end of the first transistor, the second end of the fourth transistor is electrically connected with the first end and the second end of the third transistor, the third end of the fourth transistor is electrically connected with the first voltage,
wherein the second voltage is greater than the first voltage.
In one possible implementation, the reference current source further includes:
a fifth transistor having a first terminal electrically connected to the second voltage and a second terminal electrically connected to a third terminal and the first terminal of the first transistor;
wherein a first end of the fifth transistor is used for outputting the reference current;
the first end of the first transistor is electrically connected to the second voltage through the fifth transistor.
In one possible implementation, the second terminal of the fourth transistor receives a control voltage output by the first terminal of the third transistor, the control voltage causing the fourth transistor to operate in a linear region, wherein the fourth transistor is an equivalent resistance that varies with the control voltage when the fourth transistor operates in the linear region.
In one possible implementation, the control voltage is expressed as:
wherein V is BIAS For controlling voltage +.>For the aspect ratio of said second transistor, -/->V being the aspect ratio of the third transistor Tna1 V being the threshold voltage of the second transistor Tn1 Is a threshold voltage of the third transistor, wherein a value of the control voltage varies with a variation in temperature.
In one possible implementation manner, the resistance value of the resistance of the temperature-varying resistance module is expressed as:
wherein R is the resistance value of the resistor, mu is the mobility of the fourth transistor, C OXn2 For the oxide capacitance between the gate and the channel of the unit area of the fourth transistor,v being the aspect ratio of the fourth transistor BIAS For the control voltage, V Tn2 Is the threshold voltage of the fourth transistor.
In one possible implementation, the first transistor and the second transistor are depletion type NMOS transistors, and the third transistor and the fourth transistor are enhancement type NMOS transistors.
In one possible implementation, the first voltage is used as a reference ground of the reference current source, and the second voltage is used as an operating voltage of the reference current source.
In one possible implementation, the temperature-varying resistance module includes:
a first resistor, wherein a first end of the first resistor is electrically connected to a third end of the first transistor;
and the first end of the second resistor is electrically connected with the second end of the first resistor, and the second end of the second resistor is electrically connected with the first voltage.
In one possible implementation, the first resistor is a positive temperature coefficient resistor and the second resistor is a negative temperature coefficient resistor.
According to the reference current source, the temperature-dependent resistor is generated through the temperature-dependent resistor module, and the first transistor outputs the reference current with zero temperature coefficient by utilizing the temperature-dependent resistor. The reference current source obtained through the method has the advantages of high output reference current precision and stable operation.
Other features and aspects of the present disclosure will become apparent from the following detailed description of exemplary embodiments, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate exemplary embodiments, features and aspects of the present disclosure and together with the description, serve to explain the principles of the disclosure.
Fig. 1 shows a schematic diagram of a reference current source according to an embodiment of the present disclosure.
Fig. 2 shows a schematic diagram of a reference current source according to an embodiment of the present disclosure.
Fig. 3 shows a schematic diagram of a reference current source according to an embodiment of the present disclosure.
Detailed Description
Various exemplary embodiments, features and aspects of the disclosure will be described in detail below with reference to the drawings. In the drawings, like reference numbers indicate identical or functionally similar elements. Although various aspects of the embodiments are illustrated in the accompanying drawings, the drawings are not necessarily drawn to scale unless specifically indicated.
The word "exemplary" is used herein to mean "serving as an example, embodiment, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments.
In addition, numerous specific details are set forth in the following detailed description in order to provide a better understanding of the present disclosure. It will be understood by those skilled in the art that the present disclosure may be practiced without some of these specific details. In some instances, methods, means, elements, and circuits well known to those skilled in the art have not been described in detail in order not to obscure the present disclosure.
Referring to fig. 1, fig. 1 shows a schematic diagram of a reference current source according to an embodiment of the present disclosure.
If 1 is shown, the current source comprises:
a temperature-variable resistor module 10 for providing a temperature-variable resistor, a first end of the temperature-variable resistor module 10 being electrically connected to a first voltage V 1 ；
First transistor Q 1 The first transistor Q 1 Is electrically connected to the second voltage V 2 A second end electrically connected to the first voltage V 1 A third terminal electrically connected to the second terminal of the temperature-varying resistor module 10, wherein the first transistor Q 1 For outputting a reference current I according to the resistance of the temperature-varying resistance module 10 REF 。
According to the reference current source, the temperature-dependent resistor is generated through the temperature-dependent resistor module, and the first transistor outputs the reference current with zero temperature coefficient by utilizing the temperature-dependent resistor. The reference current source obtained through the method has the advantages of high output reference current precision and stable operation.
Referring to fig. 2, fig. 2 shows a schematic diagram of a reference current source according to an embodiment of the present disclosure.
As shown in fig. 2, the current source further includes:
second transistor Q 2 The second transistor Q 2 Is electrically connected to the second voltage V 2 The second end is electrically connected to the third end;
third transistor Q 3 The third transistor Q 3 Is electrically connected to the second transistor Q 2 A third terminal of the third transistor is electrically connected to the first voltage V 1 。
In one possible embodiment, the temperature change resistor module 10 may include a fourth transistor Q 4 The fourth transistor Q 4 Is electrically connected to the first transistor Q 1 A second end electrically connected to the third transistor Q 3 A third terminal electrically connected to the first voltage V 1 Wherein the fourth transistor Q 4 A third terminal of (a) can be used as a first terminal of the temperature-variable resistor module 10, and a fourth transistor Q 4 May be used as the second end of the temperature-varying resistor module 10. The temperature-varying resistor module 10 may further include a third end, such as a fourth transistor Q 4 Is provided.
In one possible embodiment, the second voltage V 2 Greater than the first voltage V 1 Wherein the first voltage V 1 Reference ground V as the reference current source SS The second voltage V 2 Can be used as the working voltage of the reference current source (such as V DD ). It should be noted that the first voltage V 1 Second voltage V 2 The voltage value of (2) may be set according to actual conditions, and the present disclosure is not limited.
In one possible implementation, as shown in fig. 2, the reference current source may further include:
fifth transistor Q 5 The fifth transistor Q 5 Is electrically connected to the second voltage V 2 A second terminal electrically connected to the third terminal and the first transistor Q 1 Is a first end of (2);
wherein the fifth transistor Q 5 For outputting the reference current I REF ；
Wherein the first transistor Q 1 Through the fifth transistor Q 5 Electrically connected to the second voltage V 2 。
In one possible embodiment, the first transistor Q 1 The second transistor Q 2 The third transistor and the fourth transistor are enhancement NMOS transistors, and the fifth transistor Q is a depletion NMOS transistor 5 Is an enhanced PMOS transistor.
The MOS transistor is a metal-oxide-semiconductor field effect transistor or a metal-insulator-semiconductor field effect transistor. The source and drain of the MOS transistor can be exchanged, and in most cases, the two regions are identical, and even the two ends are exchanged, the performance of the device is not affected. Wherein, the NMOS tube (N-Metal-Oxide-Semiconductor) is mainly conductive by electrons, and the PMOS tube (P-Metal-Oxide-Semiconductor) is mainly conductive by holes.
The impurity concentration doped into the channel can be changed in the manufacturing process of the depletion type transistor, so that the channel still exists even if the grid electrode of the MOSFET is not electrified. If it is desired to close the channel, a negative voltage must be applied to the gate.
In one possible embodiment, the first transistor Q 1 The first terminal, the second terminal and the third terminal of the transistor are respectively the first transistor Q 1 A drain, a gate and a source.
In one possible embodiment, the second transistor Q 2 The first terminal, the second terminal and the third terminal of the transistor are respectively the second transistor Q 2 A drain, a gate and a source.
In one possible embodiment, the third transistor Q 3 The first terminal, the second terminal and the third terminal of the transistor are respectively the third transistor Q 3 A drain, a gate and a source of (a).
In a possible embodiment, the fourth transistor Q 4 The first terminal, the second terminal and the third terminal of the transistor are respectively the fourth transistor Q 4 Is of (2)A pole, a gate and a source.
In a possible embodiment, the fifth transistor Q 5 The first end, the second end and the third end of the crystal are respectively the fifth crystal Q 5 Source, gate and drain of the tube.
In one possible implementation, the second transistor Q 2 Third transistor Q 3 Can be used for controlling the fourth transistor Q 4 Is not in the operating state.
In the present embodiment, the fourth transistor Q 4 Receiving the third transistor Q 3 Control voltage V output from the first end of (2) BIAS The control voltage V BIAS So that the fourth transistor Q 4 Operating in the linear region, wherein, in the fourth transistor Q 4 Operating in the linear region, the fourth crystal Q 4 The tube is connected with the control voltage V BIAS A varying equivalent resistance.
In one possible embodiment, the control voltage V may be obtained by BIAS ：
First, due to flowing through the second transistor Q 2 Third transistor Q 3 Is the current I of (2) 1 Equal, the current I can be obtained 1 The following are provided:
wherein mu na1 For the second transistor Q 2 Mobility of C OXna1 For the second transistor Q 2 Oxide layer capacitance between gate and channel per unit area, +.>V being the aspect ratio of the second transistor GSna1 For the second transistor Q 2 Voltage between gate and source, V Tna1 For the second transistor Q 2 Is [ mu ] and is equal to the threshold voltage of n1 Is a third transistor Q 3 Mobility of C OXn1 Is a third transistor Q 3 Oxidation between gate and channel per unit area of (a)Layer capacitance->V being the aspect ratio of the third transistor GSn1 Is a third transistor Q 3 V is the voltage between the gate and the source Tn1 Is a third transistor Q 3 Wherein the dimension of the gate in the source and drain directions in the transistor is referred to as the length L and the dimension of the gate in the vertical direction is referred to as the width W.
Second, due to V GSna1 ＝0，V GS ＝V BIAS And a second transistor Q 2 Is set at a threshold voltage V of Tna1 Is negative, according to current I 1 The formula of (2) can be used to obtain the control voltage V BIAS The method comprises the following steps:
wherein the threshold voltage V Tn1 Is a negative temperature coefficient, |V Tna1 I is the threshold voltage V Tna1 Is the absolute value of (c).
It can be seen that by varying the second transistor Q 2 Third transistor Q 3 The width-to-length ratio of the voltage regulator can obtain the control voltage which changes along with the temperature.
It should be appreciated that the second transistor Q 2 Third transistor Q 3 The aspect ratio of (c) may be selected according to actual needs, and the disclosure is not limited thereto.
It should be understood that in the present embodiment, the second transistor Q 2 Third transistor Q 3 Can be used as control voltage V BIAS The generation circuit of (a) is provided outside the temperature-varying resistor module 10, and in other embodiments, the second transistor Q 2 Third transistor Q 3 May also be provided in the temperature change resistor module 10, and the present disclosure is not limited.
In the fourth transistor Q 4 In stable operation, the fourth transistor Q 4 Operating in the linear region when the fourth transistor Q 4 Operating in the linear region, the fourth transistor Q 4 Can be regarded as an equivalent resistance, i.e. the temperature changeThe resistance module 10 provides a temperature dependent resistance.
In one possible embodiment, the resistance value of the resistance of the temperature-variable resistance module 10 is expressed as:
wherein R is the resistance value, mu, of the resistor n2 For the fourth transistor Q 4 Mobility of C OXn2 For the fourth transistor Q 4 Oxide layer capacitance between gate and channel per unit area, +.>For the fourth transistor Q 4 Ratio of width to length, V BIAS For the control voltage, V Tn2 For the fourth transistor Q 4 Is set at a threshold voltage of (a).
In the above formula, due to the fourth transistor Q 4 Is a mobility mu of (a) n2 Threshold voltage V Tn2 The trend with temperature is fixed, so by controlling the voltage V BIAS Can obtain a controlled voltage V BIAS A controlled resistance adjustable with temperature.
In one possible embodiment, the reference current I is output by a reference current source REF A reference current that is zero temperature coefficient, the reference current being:
wherein I is REF Mu, the value of the reference current na2 For the first transistor Q 1 Mobility of C OXna2 For the first transistor Q 1 Oxide capacitance between gate and channel per unit area, V Tna2 For the first transistor Q 1 Is set at a threshold voltage of (a).
In the above formula, due to the first transistor Q 1 Is a mobility mu of (a) na2 Threshold voltage V Tna2 The trend of the change with temperature is fixed, so by controlling the trend of the change with temperature of the resistance R, the mobility mu can be controlled na2 Threshold voltage V Tna2 To compensate for the variation in (c) so that a zero temperature coefficient reference current can be obtained. At the same time from the reference current I REF As can be seen from the formula of (1), the reference current I REF With a first voltage V 1 And/or a second voltage V 2 Irrelevant, not follow the first voltage V 1 And/or a second voltage V 2 And thus, the reference current IREF has stable characteristics.
From the above derivation, by selecting the second transistor Q with proper aspect ratio 2 Third transistor Q 3 Can obtain a control voltage V which varies with temperature BIAS Selecting a fourth transistor Q with a proper width-to-length ratio 4 According to the control voltage V BIAS Can obtain a resistor R which can be adjusted along with the change of temperature, and select a first transistor Q with proper width-to-length ratio 1 From the resistor R, a zero temperature coefficient reference current V can be obtained REF . The reference current obtained by the mode has high precision, is not influenced by working voltage and temperature, and is relatively stable.
Referring to fig. 3, fig. 3 shows a schematic diagram of a reference current source according to an embodiment of the present disclosure.
As shown in fig. 3, the temperature-variable resistor module 10 may further include:
a first resistor 101, a first end of the first resistor 101 is electrically connected to the first transistor Q 1 Is a third terminal of (2);
a second resistor 102, wherein a first end of the second resistor 102 is electrically connected to a second end of the first resistor, and a second end of the second resistor is electrically connected to the first voltage V 1 。
In one possible implementation, the first resistor 101 is a positive temperature coefficient resistor and the second resistor 102 is a negative temperature coefficient resistor.
In this embodiment, the first end of the first resistor 101 may be used as the second end of the temperature varying resistor module 10, and the second end of the second resistor 102 may be used as the first end of the temperature varying resistor module 10.
An equivalent resistance with temperature variation can be obtained by the first resistor 101 with positive temperature coefficient and the second resistor 102 with negative temperature real number, namely, the temperature-dependent resistor (series connection of the first resistor 101 and the second resistor 102) provided by the temperature-variable resistor module 10 can be used for compensating the first transistor Q 1 Mobility and temperature coefficient of the first transistor Q 1 From the equivalent resistor R, a reference current I can be obtained REF ：
Wherein R is resistance changing with temperature, V GSna2 For the first transistor Q 1 From the voltage between gate and source, from the reference current I REF As can be seen from the formula of (1), by selecting a first transistor Q of suitable aspect ratio 1 The reference current I with zero temperature coefficient can be obtained REF 。
It should be understood that in the present embodiment, the resistance of the temperature-varying resistance module 10 is formed by connecting the first resistor 101 and the second resistor 102 in series, and in other embodiments, the temperature-varying resistance module 10 may include a different number of resistance networks, which may be a series network, a parallel network, or a combination thereof, and other forms, as long as the resistance network can achieve an equivalent resistance that varies with temperature, and the disclosure is not limited.
The foregoing description of the embodiments of the present disclosure has been presented for purposes of illustration and description, and is not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the various embodiments described. The terminology used herein was chosen in order to best explain the principles of the embodiments, the practical application, or the technical improvement of the technology in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.

Claims (6)

1. A reference current source, the reference current source comprising:
the temperature-changing resistor module is used for providing a resistor which changes along with temperature, and a first end of the temperature-changing resistor module is electrically connected to a first voltage;
a first transistor, a first end of the first transistor is electrically connected with a second voltage, a second end of the first transistor is electrically connected with the first voltage, a third end of the first transistor is electrically connected with a second end of the temperature-changing resistor module,
wherein the first end of the first transistor is used for outputting reference current according to the resistance of the temperature-changing resistance module,
the reference current source further comprises:
a second transistor, a first end of which is electrically connected to the second voltage, and a second end of which is electrically connected to a third end;
a third transistor, a first end and a second end of the third transistor are electrically connected to the second end and the third end of the second transistor, and a third end of the third transistor is electrically connected to the first voltage;
wherein the temperature-changing resistor module comprises a fourth transistor, the first end of the fourth transistor is electrically connected with the third end of the first transistor, the second end of the fourth transistor is electrically connected with the first end and the second end of the third transistor, the third end of the fourth transistor is electrically connected with the first voltage,
the first voltage is used as the reference ground of the reference current source, the second voltage is used as the working voltage of the reference current source, the second voltage is larger than the first voltage, the second end of the fourth transistor receives the control voltage output by the first end of the third transistor, the control voltage enables the fourth transistor to work in a linear region, and when the fourth transistor works in the linear region, the fourth transistor is an equivalent resistance changing along with the control voltage, and the control voltage is expressed as:
wherein->For controlling voltage +.>For the aspect ratio of said second transistor, -/->For the aspect ratio of said third transistor,/->For the threshold voltage of the second transistor, < >>Is a threshold voltage of the third transistor, wherein a value of the control voltage varies with a variation in temperature.
2. The reference current source of claim 1, further comprising:
a fifth transistor having a first terminal electrically connected to the second voltage and a second terminal electrically connected to a third terminal and the first terminal of the first transistor;
wherein a first end of the fifth transistor is used for outputting the reference current;
the first end of the first transistor is electrically connected to the second voltage through the fifth transistor.
3. The reference current source of claim 1, wherein the resistance of the temperature change resistance module is represented as:
，
wherein R is the resistance value of the resistor,for the mobility of the fourth transistor, < >>For the oxide layer capacitance between the gate and the channel of the unit area of the fourth transistor +.>For the aspect ratio of said fourth transistor, +.>For the control voltage, +.>Is the threshold voltage of the fourth transistor.
4. The reference current source of claim 1, wherein the first transistor and the second transistor are depletion NMOS transistors, and the third transistor and the fourth transistor are enhancement NMOS transistors.
5. The reference current source of claim 1, wherein the temperature change resistor module comprises:
a first resistor, wherein a first end of the first resistor is electrically connected to a third end of the first transistor;
and the first end of the second resistor is electrically connected with the second end of the first resistor, and the second end of the second resistor is electrically connected with the first voltage.
6. The reference current source of claim 5, wherein the first resistor is a positive temperature coefficient resistor and the second resistor is a negative temperature coefficient resistor.
CN201910019520.XA 2019-01-09 2019-01-09 Reference current source Active CN109582076B (en)

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Publication number Priority date Publication date Assignee Title
US3793522A (en) * 1970-09-30 1974-02-19 Philips Corp Temperature compensating circuits for photo-conductive cells
US5146152A (en) * 1991-06-12 1992-09-08 Samsung Electronics Co., Ltd. Circuit for generating internal supply voltage
US5315230A (en) * 1992-09-03 1994-05-24 United Memories, Inc. Temperature compensated voltage reference for low and wide voltage ranges
CN1428675A (en) * 2001-12-28 2003-07-09 旺宏电子股份有限公司 Voltage reference source provided circuit
CN101609346A (en) * 2008-06-17 2009-12-23 瑞鼎科技股份有限公司 Current source circuit
JP2011091759A (en) * 2009-10-26 2011-05-06 Seiko Epson Corp Current source, amplifier circuit, electronic circuit, integrated circuit device and electronic apparatus
CN104135277A (en) * 2014-07-25 2014-11-05 深圳大学 An on-chip reference clock generation circuit and method thereof
CN105824348A (en) * 2016-05-12 2016-08-03 中国电子科技集团公司第二十四研究所 Reference-voltage circuit
CN108664071A (en) * 2017-04-01 2018-10-16 华大半导体有限公司 A kind of low-power consumption temperature compensated current source circuit for electronic tag
CN108664070A (en) * 2017-04-01 2018-10-16 华大半导体有限公司 Low-power consumption temperature compensated current source circuit

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