CN1428675A - Voltage reference source provided circuit - Google Patents
Voltage reference source provided circuit Download PDFInfo
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- CN1428675A CN1428675A CN 01144047 CN01144047A CN1428675A CN 1428675 A CN1428675 A CN 1428675A CN 01144047 CN01144047 CN 01144047 CN 01144047 A CN01144047 A CN 01144047A CN 1428675 A CN1428675 A CN 1428675A
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Abstract
The present invention provides a voltage reference source circuit, including a first resistor element, a second resistor element and a MOS element, in which the MOS element is series-connected between first resistor element and second resistor element, and the grid of MOS element is connected with drain of MOS element. In said invention the MOS element can be a NMOS element, and the drain of the NMOS element is electrically connected with second resistor element, the source of MOS element is electrically connected with first resistor element, and the base body of NMOS element can be electrically connected with source, also can be electrically connected with a grounding end. Besides, MOS element also can be a PMOS element, the source of PMOS element is electrically connected with second resistor element, and the base body of PMOS element can be electrically connected with source, also can be electrically connected with a voltage source.
Description
Technical field
The present invention is about a kind of Voltage Reference power circuit, particularly about a kind of based on a metal oxide semiconductor transistor (MOS), and can under different temperatures, provide the Voltage Reference source circuit in stable voltage reference source.
Background technology
In integrated circuit, according to the needs in the design, often need a plurality of operating voltage to drive other element, for example, the operating voltage of some element is 3.3 volts, and the operating voltage of some element is 2.6 volts.
Yet generally speaking, the voltage that feeds same semi-conductor chip is fixing voltage, so, a plurality of elements in the internal circuit of driven semi-conductor chip then need the existence of reference voltage source, so that will adjust to required magnitude of voltage by the voltage of each element.For example, when the voltage that feeds semi-conductor chip is 5 volts, and the operating voltage of the element that is driven is when being 2.6 volts, and then 5 volts voltage need be adjusted into 2.6 volts with voltage through 2.4 volts reference voltage, so that this element of driven.
In known technology, one of the most frequently used circuit that is used as voltage reference source of bipolar junction transistor (BJT).Yet for the IC circuit designers, the reference voltage that BJT provided is not easy to adjust, for example, if 2.4 volts reference voltage is provided, the 4 groups of BJT that 0.6 volt reference voltages source is provided that then need to connect can obtain 2.6 volts operating voltage at last.
In addition, because semi-conductor chip can produce heat energy when operation, therefore, can improve the temperature of semi-conductor chip, and when the temperature variation of semi-conductor chip, the reference voltage that BJT provided is understood Yin Wendu and is changed, and for example, BJT can provide 0.6 volt reference voltage when Celsius 20 spend, but, after semi-conductor chip moved a period of time, its temperature was 60 degree Celsius, so the BJT in the semi-conductor chip can't provide 0.6 volt reference voltage, therefore, when 5 volts voltage of input, after through 4 groups of BJT, can't obtain 2.6 volts stable operating voltage.Therefore, possibly of the element in the semi-conductor chip can't operate as normal.
As mentioned above, how providing a kind of and can have the Voltage Reference source circuit of stable voltage reference source under different temperatures, is a current big problem really.
Brief summary of the invention
Purpose of the present invention provide a kind of can be under different temperatures, the Voltage Reference source circuit of stable voltage reference source is provided.
Feature of the present invention is when utilizing the MOS element to impose a specific voltage under different temperatures, electric current by the MOS element can be kept certain value, in other words, when the electric current by the MOS element was a particular value, the reference voltage that the MOS element is provided was a fixed value.
In order to achieve the above object, Voltage Reference source circuit according to the present invention comprises one first resistive element, one second resistive element and a MOS element.In the present invention, the MOS element connected in series is between first resistive element and second resistive element, and the grid of MOS element (gate) is electrically connected to the drain electrode (drain) of MOS element.
In the present invention, the MOS element can be a NMOS element, and the drain electrode of NMOS element is electrically connected to second resistive element, the source electrode of MOS element (source) is electrically connected to first resistive element, and the matrix of NMOS element (bulk) can be electrically connected to its source electrode, can also be electrically connected to an earth terminal.
Shown in Figure 1A, it represents the circuit diagram of a NMOS element, wherein, the grid 121 of NMOS element is electrically connected to the drain electrode 122 of NMOS element, and the matrix 124 of NMOS element is electrically connected to the source electrode 123 of NMOS element, when the matrix 124 of NMOS element during with source electrode 123 ground connection, with a voltage source V
DDFrom the drain electrode of NMOS element input, then under the operating conditions of different temperatures (20 ℃～85 ℃), V
DDWith the electric current I that flows through the NMOS element
CPRelation shown in Figure 1B.Learn that from Figure 1B (20 ℃～85 ℃) work as I under all temperature conditions
CPBe 1.036E-4 ampere-hour, V
DDBe fixed as 1.2 volts of (V of this moment
DDBe called V
CP).Conclude from Figure 1B and learn, under condition of different temperatures, the NMOS element has fixing V
CP
Shown in Fig. 2 A, if utilize the NMOS element to provide stable voltage reference source for the basis, the electric current of the NMOS element of must will flowing through is fixed as I
CPTherefore, in voltage source V
DDAnd one second resistance R 2 is set, between the drain electrode of NMOS element so that the electric current of the NMOS element of will flowing through is adjusted into I
CP
In addition, for different reference voltages can be provided to the drain electrode of NMOS element, so, the source electrode of NMOS element is electrically connected to one first resistance R 1, so that the reference voltage level of the reference voltage source that is provided is provided.
As mentioned above, when voltage source voltage be V
DD, be V at the reference voltage that drain electrode provided of NMOS element
REFThe time, REF is made as I with electric current I
CP, the reference voltage of NMOS element is V relatively
CP, at this moment, the value of first resistance R 1 and second resistance R 2 can be represented by formula (1) and formula (2):
R1＝(V
REF-V
CP)/I
CP (1)
R2＝(V
DD-V
REF)/I
CP (2)
Shown in Fig. 2 B, it represents the resistance value and the reference voltage V of first resistance R 1
REFRelation and the resistance value and the reference voltage V of second resistance R 2
REFRelation.
In addition, in the present invention, the MOS element can be a PMOS element, and the source electrode of PMOS element is electrically connected to second resistive element, drain electrode is electrically connected to first resistive element, and the matrix of PMOS element can be electrically connected to source electrode, can also be electrically connected to a voltage source (V
DD).
In sum, the present invention utilizes the MOS element by a specific currents time, the reference voltage that the MOS element is provided is a definite value, and does not vary with temperature and the characteristic that changes, therefore, the MOS element is cooperated first resistance and second resistance, so that utilize second resistance to set the electric current that passes through the MOS element, first resistance is provided by the reference voltage of the reference voltage source that is provided, so, the present invention can provide stable reference voltage source under different temperatures.
Description of drawings
Figure 1A is a circuit diagram, the circuit diagram of expression NMOS element;
Figure 1B is a coordinate figure, the circuit characteristic of NMOS element under different temperatures shown in expression Figure 1A;
Fig. 2 A is a circuit diagram, represents that voltage reference source according to the preferred embodiment of the invention provides the circuit diagram of circuit;
Fig. 2 B is a coordinate figure, the circuit characteristic of first resistive element shown in the presentation graphs 2A and second resistive element;
Fig. 2 C is a circuit diagram, and expression another voltage reference source according to the preferred embodiment of the invention provides the circuit diagram of circuit;
Fig. 3 is a coordinate figure, and the voltage reference source shown in the presentation graphs 2A provides the circuit characteristic of circuit;
Fig. 4 A is a circuit diagram, and expression another voltage reference source according to the preferred embodiment of the invention provides the circuit diagram of circuit;
Fig. 4 B is a circuit diagram, and expression another voltage reference source according to the preferred embodiment of the invention provides the circuit diagram of circuit.
Reference numeral illustrates the matrix 50 internal circuit R1 first resistive element R2 second resistive element of source electrode 124 ' PMOS element of drain electrode 123 ' PMOS element of grid 122 ' PMOS element of matrix 12 ' PMOS element 121 ' PMOS element of source electrode 124 NMOS elements of drain electrode 123 NMOS elements of the grid 122 NMOS elements of 12 NMOS elements, 121 NMOS elements
Embodiment
Hereinafter with reference to relevant drawings, Voltage Reference source circuit according to the preferred embodiment of the invention is described, wherein components identical will be illustrated with identical reference marks.
Shown in Fig. 2 A, Voltage Reference source circuit according to one preferred embodiment of the present invention comprises one second resistive element R2, one first resistive element R1 and a NMOS element 12.In the present embodiment, NMOS element 12 is one or four end member spares, it has a grid (gate) 121, drain electrode (drain) 122, one source pole (source) 123 and a matrix (bulk) 124, the grid 121 of NMOS element 12 is electrically connected to the drain electrode 122 of NMOS element 12, and the drain electrode 122 of NMOS element 12 is electrically connected to the end of the second resistive element R2, and the drain electrode 122 of NMOS element 12 also provides a reference voltage V
REFGive an internal circuit 50, in addition, the source electrode 123 of NMOS element 12 is electrically connected to the matrix 124 of NMOS element 12, and the source electrode 123 of NMOS element 12 is electrically connected to the end of the first resistive element R1; In addition, the other end of the second resistive element R2 is electrically connected to a voltage source V
DD, and the other end ground connection of the first resistive element R1.In the present embodiment, the voltage source V that is provided
DDVoltage be 3.3V, and required reference voltage V
REFBe 2V, and the V of the NMOS element 12 of Voltage Reference source circuit according to the preferred embodiment of the invention
CPBe 1.2V, and its I
CPBe the 1.036E-4 ampere, the resistance value of utilizing formula (1) and formula (2) and above-mentioned data can try to achieve the second resistive element R2 and the first resistive element R1 is respectively 12548 ohm and 7722 ohm.
As mentioned above, in the Voltage Reference source circuit of the preferred embodiment of the present invention, because the resistance value of the second resistive element R2 is 12548 ohm, the resistance value of the first resistive element R1 is 7722 ohm, therefore, the Voltage Reference source circuit of the preferred embodiment of the present invention can be under different temperatures (40 ℃～125 ℃), the reference voltage source that provides reference voltage to stabilize to 2V, as shown in Figure 3.
Shown in Fig. 2 C, the reference voltage source circuit of another preferred embodiment comprises one second resistive element R2, one first resistive element R1 and a NMOS element 12 according to the present invention.In the present embodiment, NMOS element 12 is one or four end member spares, it has a grid 121, a drain electrode 122, one source pole 123 and a matrix 124, the grid 121 of NMOS element 12 is electrically connected to the drain electrode 122 of NMOS element 12, and the drain electrode 122 of NMOS element 12 is electrically connected to the end of the second resistive element R2, and the drain electrode 122 of NMOS element 12 also provides a reference voltage V
REFGive an internal circuit 50, in addition, matrix 124 ground connection of NMOS element 12, and the source electrode 123 of NMOS element 12 is electrically connected to the end of the first resistive element R1; In addition, the other end of the second resistive element R2 is electrically connected to a voltage source V
DD, and the other end ground connection of the first resistive element R1.
Shown in Fig. 4 A, according to the present invention the reference voltage source circuit of another preferred embodiment comprise one second resistive element R2, one first resistive element R1 and a PMOS element 12 '.In the present embodiment, PMOS element 12 ' be one or four end member spares, its have a grid 121 ', one drain electrode 122 ', one source pole 123 ' and a matrix 124 ', PMOS element 12 ' grid 121 ' be electrically connected to PMOS element 12 ' drain electrode 122 ', and PMOS element 12 ' drain electrode 122 ' the be electrically connected to end of the first resistive element R1, in addition, PMOS element 12 ' matrix 124 ' be electrically connected to PMOS element 12 ' source electrode 123 ', and PMOS element 12 ' source electrode 123 ' be electrically connected to the end of the second resistive element R2, and PMOS element 12 ' source electrode 123 ' also provide a reference voltage V
REFGive an internal circuit 50; In addition, the other end of the second resistive element R2 is electrically connected to a voltage source V
DD, and the other end ground connection of the first resistive element R1.
Shown in Fig. 4 B, according to the present invention the reference voltage source circuit of another preferred embodiment comprise one second resistive element R2, one first resistive element R1 and a PMOS element 12 '.In the present embodiment, PMOS element 12 ' be one or four end member spares, its have a grid 121 ', a drain electrode 122 ', one source pole a 123 ' and matrix 124 ', PMOS element 12 ' grid 121 ' be electrically connected to PMOS element 12 ' drain electrode 122 ', and PMOS element 12 ' drain electrode 122 ' the be electrically connected to end of the first resistive element R1, in addition, PMOS element 12 ' matrix 124 ' a be electrically connected to voltage source V
DD, and PMOS element 12 ' source electrode 123 ' be electrically connected to the end of the second resistive element R2, and PMOS element 12 ' source electrode 123 ' also provide a reference voltage V
REFGive an internal circuit 50; In addition, the other end of the second resistive element R2 is electrically connected to a voltage source V
DD, and the other end ground connection of the first resistive element R1.
As mentioned above, the reference voltage V of reference voltage source circuit according to the preferred embodiment of the invention
REFCan change according to the demand of internal circuit 50, and reference voltage V
REFResistance value by second resistance R 2 and first resistance R 1 is determined that therefore, the resistance value that changes second resistance R 2 and first resistance R 1 can change reference voltage V
REFTo the required magnitude of voltage of internal circuit 50.For example, the resistance value of second resistance R 2 is set at 17375 ohm, the resistance value of first resistance R 1 is set at 2895 ohm, then reference voltage V
REFMagnitude of voltage be 1.5V.
In addition, the NMOS element of reference voltage source circuit or PMOS element can have another V according to the preferred embodiment of the invention
CPWith I
CPTherefore, as the V of NMOS element
CPBe 0.75V, I
CPBe the 4.5E-6 ampere-hour, the resistance value of second resistance R 2 is set at 288889 ohm, the resistance value of first resistance R 1 is set at 277778 ohm, then reference voltage V
REFMagnitude of voltage be 2V.
Because the present invention utilizes the characteristic of MOS element, in other words, the MOS element is by a specific currents time, and the reference voltage that the MOS element is provided is a definite value, and do not vary with temperature and change, so, when the present invention cooperates first resistance and second resistance, utilize second resistance to set the electric current that passes through the MOS element, first resistance is provided by the reference voltage of the reference voltage source that is provided, therefore, the present invention can provide stable reference voltage source under different temperatures.
The above only is an illustrative, but not is restrictive.Anyly do not break away from spirit of the present invention and category, and, all should be included in the accompanying Claim its equivalent modifications of carrying out or change.
Claims (7)
1. a voltage reference source provides circuit, comprises:
One first resistive element;
One second resistive element; And
One MOS element, it is connected electrically between this first resistive element and this second resistive element, and the grid of this MOS element is electrically connected to the drain electrode of this MOS element.
2. voltage reference source as claimed in claim 1 provides circuit, wherein
This MOS element is a NMOS element, and the drain electrode of this element is electrically connected to this second resistive element, and its source electrode is electrically connected to this first resistive element.
3. voltage reference source as claimed in claim 2 provides circuit, wherein
The matrix of this MOS element is electrically connected to this source electrode.
4. voltage reference source as claimed in claim 2 provides circuit, wherein
The matrix of this MOS element is electrically connected to an earth terminal.
5. voltage reference source as claimed in claim 1 provides circuit, wherein
This MOS element is a PMOS element, and the source electrode of this element is electrically connected to this second resistive element, and its drain electrode is electrically connected to this first resistive element.
6. voltage reference source as claimed in claim 5 provides circuit, wherein
The matrix of this MOS element is electrically connected to this source electrode.
7. voltage reference source as claimed in claim 5 provides circuit, wherein
The matrix of this MOS element is electrically connected to a voltage source (V
DD).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011440473A CN1180327C (en) | 2001-12-28 | 2001-12-28 | Voltage reference source provided circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011440473A CN1180327C (en) | 2001-12-28 | 2001-12-28 | Voltage reference source provided circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1428675A true CN1428675A (en) | 2003-07-09 |
| CN1180327C CN1180327C (en) | 2004-12-15 |
Family
ID=4677295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011440473A Expired - Fee Related CN1180327C (en) | 2001-12-28 | 2001-12-28 | Voltage reference source provided circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1180327C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100432887C (en) * | 2005-06-16 | 2008-11-12 | 中兴通讯股份有限公司 | Voltage reference source device |
| CN109582076A (en) * | 2019-01-09 | 2019-04-05 | 上海晟矽微电子股份有限公司 | Reference current source |
-
2001
- 2001-12-28 CN CNB011440473A patent/CN1180327C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100432887C (en) * | 2005-06-16 | 2008-11-12 | 中兴通讯股份有限公司 | Voltage reference source device |
| CN109582076A (en) * | 2019-01-09 | 2019-04-05 | 上海晟矽微电子股份有限公司 | Reference current source |
| CN109582076B (en) * | 2019-01-09 | 2023-10-24 | 上海晟矽微电子股份有限公司 | Reference current source |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1180327C (en) | 2004-12-15 |
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