CN108664071A - A kind of low-power consumption temperature compensated current source circuit for electronic tag - Google Patents
A kind of low-power consumption temperature compensated current source circuit for electronic tag Download PDFInfo
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- CN108664071A CN108664071A CN201710215928.5A CN201710215928A CN108664071A CN 108664071 A CN108664071 A CN 108664071A CN 201710215928 A CN201710215928 A CN 201710215928A CN 108664071 A CN108664071 A CN 108664071A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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- Physics & Mathematics (AREA)
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- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Amplifiers (AREA)
Abstract
The present invention provides a kind of low-power consumption temperature compensated current source circuit, it is characterized in that, transistor unit including generating a positive temperature current, with the temperature control unit for generating negative temperature compensation, one end of the current source generation unit connects one end of the temperature control unit, realizes the zero-temperature coefficient of electric current output.The low-power consumption temperature-compensation method that the present invention designs can reach the good temperature characteristics of label current source under the conditions of extremely low power dissipation, can fully meet the application demand of electronic tag.
Description
Technical field
The invention belongs to radio frequency analog identification technology fields, are related to the low-power consumption technique for temperature compensation of passive electronic label.
Background technology
With popularizing for Internet of Things, electronic tag is able to extensive use, and high-performance, the label requirements of low-power consumption are increasingly prominent
Go out.Traditional mentality of designing cannot meet application demand.Wherein under low-power consumption the current source temperature characteristic of electronic tag at
For urgent problem to be solved.
The performance quality of label directly determines the performance table of the size of its application range, especially label at different temperatures
It is existing particularly important.How abstract factory has a great problem that good performance becomes current design at different temperatures.
Traditional technique for temperature compensation can no longer meet requirement due to the limitation of power consumption in label design aspect.Current source is with reference to work
For a most important part in Analog Circuit Design, power consumption control and chip performance are played a crucial role.
The Current Voltage structure of traditional temperature-compensating as shown in Figure 1 realizes output electricity by the way of triode and amplifier
The temperature-compensating of stream and voltage.Triode and amplifier, which are required to larger power consumption, could realize good temperature-compensating, for nothing
The electronic tag in source cannot be satisfied requirement.
The design implementation feature of present invention combination electronic label chip provides corresponding whole implementation.
Invention content
The present invention is to solve problems set forth above, provides a kind of low-power consumption temperature-compensated current for electronic tag
Source circuit can provide the current source of low-power consumption temperature-compensating for electronic tag, reach electronic tag under the conditions of extremely low power dissipation
The good temperature characteristics of current source.
The present invention proposes a kind of low-power consumption temperature compensated current source circuit, which is characterized in that including generating a positive temperature
The current source of electric current generates unit, and generates the temperature control unit of negative temperature compensation, the current source generates one end of unit
One end of the temperature control unit is connected, realizes the zero-temperature coefficient of electric current output.
The temperature control unit include an at least diode D1, electric current input diode cells D 1 generate one with
The voltage value of temperature change.
The temperature control unit further includes a transistor M6, described in the voltage value control that the diode cells D 1 generates
The grid of transistor M6, the resistance value by regulating and controlling transistor M6 realize negative temperature coefficient.
One end of the diode D1 connects the grid of the transistor M6, the other end of the diode D1
Connect low-voltage, the drain electrode of the transistor M6 is one end of the temperature control unit, and the source electrode of the transistor M6 connects described
Low-voltage.
The temperature compensated current source circuit is PMOS output circuit structures, and the transistor M6 is PMOS transistor, institute
The one end for stating diode D1 is anode, and the other end of the diode D1 is cathode；Or, the temperature-compensated current
Source circuit is NMOS output circuit structures, and the transistor M6 is NMOS transistor, and one end of the diode D1 is negative
The other end of pole, the diode D1 is anode.
The temperature control unit further includes a partial pressure unit, a termination high voltage of the partial pressure unit, another termination
One end of the diode D1.
The partial pressure unit is that the source electrode of transistor M1, the transistor M1 connect high voltage, the drain electrode of the transistor M1
Connect one end of the diode D1.
It includes transistor M2, transistor M3, transistor M4, transistor M5 and resistance unit that the current source, which generates unit,
R1, transistor M2 and transistor M3 constitute the first current mirror, and transistor M4, transistor M5 constitute the second current mirror, resistance unit
One end of R1 is connect with the source of transistor M4, and the other end of resistance unit R1 connects one end of the temperature control unit, brilliant
Body pipe M2, transistor M3 source electrode connect high voltage, the drain electrode of transistor M4 connects the drain electrode of transistor M2, and the drain electrode of transistor M5 connects
The source electrode of the drain electrode of transistor M3, transistor M5 connects low-voltage.
Power end of the source electrode and grid of the transistor M1 as the temperature compensated current source circuit draws zero-temperature coefficient
The output current of coefficient.
The partial pressure unit is resistance, the current source generate unit include transistor M2, transistor M3, transistor M4,
Transistor M5 and resistance unit R1, transistor M2 and transistor M3 constitute the first current mirror, and transistor M4, transistor M5 constitute the
One end of two current mirrors, resistance unit R1 is connect with the source of transistor M4, and the other end of resistance unit R1 connects the temperature
One end of control unit, transistor M2, transistor M3 source electrode connect high voltage, the drain electrode of transistor M4 connects the leakage of transistor M2
Pole, the drain electrode of transistor M5 connect the drain electrode of transistor M3, and the source electrode of transistor M5 connects low-voltage, the source electrode of the transistor M2 and
Power end of the grid as the temperature compensated current source circuit, draws the output current of zero-temperature coefficient.
Description of the drawings
Fig. 1 shows traditional temperature-compensated current potential circuit schematic diagrames.
Fig. 2A indicates low-power consumption temperature compensated current source PMOS circuit diagrams according to an embodiment of the invention；Fig. 2 B
Indicate low-power consumption temperature compensated current source NMOS circuit schematic diagram according to an embodiment of the invention.
Fig. 3 indicates current temperature compensation principle schematic diagram according to an embodiment of the invention.
Specific implementation mode
The present invention is directed to the technique for temperature compensation of current source, proposes relevant design thinking.Key during being implemented in combination with
Technology point, provides detailed description.
Passive RF electronic tag itself does not have power supply, and the required energy that works derives from electromagnetic field Space Coupling, radio frequency electrical
The AC energy in space is changed into the DC power supply of chip operation needs by structure designs such as rectification amplitude limits by road, to activate core
Piece internal circuit completes the communication between label and card machine.Label is by the variation of radio-frequency pulse into the demodulation sum number of line command
According to transmission, instruction is received by the cooperation of analog module and digital module and completes data storage, transmission or other operations.Label returns
The mode for returning data is the impedance by controlling antennal interface, changes the reflectance factor of antenna by impedance variations, to carrier wave
Signal completes modulation.Whole work process needs the transmitted in both directions of external electromagnetic field supply energy completion communication data.
Since the energy of passive electronic label derives from electromagnetic field Space Coupling, and pass through impedance in communication process
The transmission of data is completed in variation, and the energy acceptance of label is very limited, needs to carry out the analogy and digital circuit of label comprehensive
Low power dissipation design, to meet the performance requirement of various application scenarios.
The present invention provides a kind of low-power consumption temperature compensated current source circuits for electronic tag, in conjunction with electronic tag core
In piece design the characteristics of low-power consumption, small area, the detailed settlement project of a current source of the low-power consumption with temperature-compensating is given.
Passive electronic label mainly obtains energy by the coupling of space electric field or electromagnetic field, so traditional generation electric current
The circuit structure in source is most of to may not apply to the field since power consumption is excessive.According to one embodiment of present invention, it uses
A kind of circuit structure of simplest five pipe unit generates a basic current source, as M2~M5 in Fig. 2A and R1 is constituted
Structure (M2 '~M5 ' is similar with R1 ' in Fig. 2 B).Wherein transistor M2, M3 constitutes PMOS current mirrors, and transistor M4, M5 are constituted
NMOS current mirrors, resistance R1 are connect with the source of transistor M4, adjust the working condition of transistor M4 devices.Pass through reasonable selection
Device size can obtain the current source of a positive temperature coefficient.In view of the application characteristic of low-power consumption in electronic tag, in electricity
Resistance R1 needs to pay special attention to in the relative size selection of transistor M4, M5.The connection knot that transistor M5 devices pass through diode
Structure, i.e. the grid leak short circuit of MOS, source ground connection ensure that the grid voltage at the ends transistor M4 within the scope of very high current is basically unchanged.
Resistance R1 ensures crystal by way of resistive degeneration with the source of transistor M5 difference controlling transistor M4 devices and grid end
The electric current that pipe M4 devices flow through maintains a stationary value.The grid of transistor M7 is connect with the grid of transistor M1, transistor
It is zero-temperature coefficient that the drain electrode of M7, which provides the output current I, the output current I generated,.
PMOS output currents and NMOS output current two ways, two kinds of structures are set forth in Fig. 2A and Fig. 2 B
To reach ideal temperature compensation characteristic.
Fig. 2A indicates low-power consumption temperature compensated current source circuit diagram according to an embodiment of the invention, is in figure
PMOS output current modes.Circuit is electric current outflow in PMOS output current modes.
Fig. 2 B indicate low-power consumption temperature compensated current source circuit diagram according to an embodiment of the invention, are in figure
NMOS output current modes.Circuit is that electric current flows into NMOS output current modes.
As shown in Figure 2 A, transistor M2, M3, M4, M5 and resistance R1 together constitutes a basic current source and generates list
Member；Transistor M1, diode D1 and transistor M6 constitute a temperature control unit；One is generated by two-part cooperation
Ideal PMOS output current source circuit of the low-power consumption with temperature-compensating.NMOS electric current export structures are similar therewith.Such as Fig. 2 B institutes
Show, transistor M2 ', M3 ', M4 ', M5 ' and resistance R1 ' together constitute a basic current source and generate unit；Transistor
M1 ', diode D1 ' and transistor M6 ' constitute a temperature control unit；One is generated by two-part cooperation preferably
NMOS output current source circuit of the low-power consumption with temperature-compensating.
It is illustrated in the PMOS output current modes of Fig. 2A as an example below.
Transistor M2 and transistor M3 constitutes current mirror and ensures that two branch currents maintain fixed proportion, transistor M5 to adopt
With the structure of NMOS grid leak short circuits, controlling transistor M4 grid voltages pass through transistor M4 and electricity in a smaller range
R1 cooperation control electric currents are hindered in a smaller range.
Transistor M1 provides electric current by the electric current of mirrored transistor M2 for diode D1, ensures the normal works of diode D1
Make.Transistor M6 grids are connected with the anode of diode D1, jointly control the temperature characterisitic of transistor M6, and cooperation current source generates
Unit obtains the current source output of an ideal temperature.
Electric current inputs a diode D1 and generates a voltage value varied with temperature.The diode structure can be integrated
Any type of structure with diode characteristic generated in circuit technology.Such as two poles of pn-junction, npn, pnp and MOS device
Pipe connection etc..The grid for the voltage value control MOS device that diode generates, the resistance value by regulating and controlling metal-oxide-semiconductor realize current source
Negative temperature characteristic.The resistance of metal-oxide-semiconductor realizes the zero-temperature coefficient of electric current with traditional resistor form collective effect in series or in parallel
Characteristic.The negative temperature coefficient voltage control metal-oxide-semiconductor grid that diode generates forms the resistance of positive temperature coefficient, coordinates five pipe units
Structure forms the electric current of a negative temperature coefficient, the final zero-temperature coefficient for realizing overall output electric current I.The present invention passes through electricity
The innovative electric current for realizing negative temperature characteristic of different temperatures characteristic conversion between piezo-resistive-electric current, and cleverly with
Original positive temperature coefficient electric current complementation obtains the electric current of zero-temperature coefficient.By to above by crystal known to circuit structural analysis
The current source that the five pipe unit structures that pipe M2~M5 and resistance R1 are constituted generate is the current source of a positive temperature coefficient.It is terrible
To the electric current output of an ideal zero-temperature coefficient, it would be desirable to increase the adjusting parameter of a negative temperature coefficient so that electric current is defeated
Go out with temperature-resistant.We increase transistor M1, diode D1 and the parts transistor M6 for realizing this partial function thus.
The grid end of transistor M1 is connect with the ends transistor M2, M3, constitutes current mirror, a stable electric current is provided for diode D1.
The anode of diode D1 devices is connect with the grid end of transistor M6 devices, for generating a controllable voltage varied with temperature,
The drain terminal of transistor M6 devices is connected with resistance R1, source ground connection.The grid voltage of transistor M6 devices becomes with temperature in this way
Change the resistance variations for controlling M6, which connects with resistance R1 codetermines the source voltage terminal range of transistor M4, compensation
The electric current variation with temperature of generation obtains the current source of an ideal zero-temperature coefficient variation.Fig. 3 gives current temperature compensation
The schematic diagram of principle is generated within the temperature range of -40~85 DEG C by five pipe units that transistor M2~M5 and resistance R1 are constituted
The current curve of one positive temperature coefficient.One subzero temperature is generated by the part that transistor M1, diode D1 and transistor M6 are constituted
Spend the current curve of coefficient.The variation tendency for reasonably selecting two curves carries out electric current summation, obtains in entire temperature range
The curve that electric current is basically unchanged.
Electric current source generating circuit power consumption is very low, and current source does not vary with temperature, and can be very good to be applied to low-power consumption, band temperature
Spend the electric current application environment of compensation.The low-power consumption temperature-compensation method that the present invention designs can reach mark under the conditions of extremely low power dissipation
The good temperature characteristics for signing current source, meet traditional chip design technology, and cost of implementation is low, and configuration is flexible, power consumption is extremely low, can
Fully to meet the application demand of electronic tag.
The basic principles, main features and advantages of the present invention have been shown and described above.The technology of the industry
For personnel it should be appreciated that the present invention is not limited by examples detailed above, described in examples detailed above and specification is to illustrate the present invention
Principle, various changes and improvements may be made to the invention without departing from the spirit and scope of the present invention, these variation and
Improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention is by appended claims and its is equal
Object defines.
Claims (10)
1. a kind of temperature compensated current source circuit, which is characterized in that the current source including generating a positive temperature current generates single
Member, and the temperature control unit of negative temperature compensation is generated, one end connection temperature control that the current source generates unit is single
The zero-temperature coefficient of electric current output is realized in one end of member.
2. temperature compensated current source circuit as shown in claim 1, which is characterized in that the temperature control unit includes at least
One diode D1, electric current input diode cells D 1 generate a voltage value varied with temperature.
3. the temperature compensated current source circuit as shown in claim 2, which is characterized in that the temperature control unit further includes one
Transistor M6, the voltage value that the diode cells D 1 generates control the grid of the transistor M6, by regulating and controlling transistor M6
Resistance value realize negative temperature coefficient.
4. temperature compensated current source circuit as stated in claim 3, which is characterized in that one end of the diode D1 connects
The grid of the transistor M6 is connect, the drain electrode of another termination low-voltage of the diode D1, the transistor M6 is institute
One end of temperature control unit is stated, the source electrode of the transistor M6 connects the low-voltage.
5. the temperature compensated current source circuit as shown in claim 4, which is characterized in that the temperature compensated current source circuit is
PMOS output circuit structures, the transistor M6 are PMOS transistor, and one end of the diode D1 is positive, described two
The other end of pole pipe cells D 1 is cathode；Or, the temperature compensated current source circuit is NMOS output circuit structures, the crystal
Pipe M6 is NMOS transistor, and one end of the diode D1 is cathode, and the other end of the diode D1 is anode.
6. the temperature compensated current source circuit as shown in claim 4, which is characterized in that the temperature control unit further includes one
Partial pressure unit, a termination high voltage of the partial pressure unit, one end of another termination diode D1.
7. the temperature compensated current source circuit as shown in claim 6, which is characterized in that the partial pressure unit is transistor M1,
The source electrode of the transistor M1 connects high voltage, and the drain electrode of the transistor M1 connects one end of the diode D1.
8. the temperature compensated current source circuit as shown in claim 7, which is characterized in that it includes crystalline substance that the current source, which generates unit,
Body pipe M2, transistor M3, transistor M4, transistor M5 and resistance unit R1, transistor M2 and transistor M3 constitute the first electric current
Mirror, transistor M4, transistor M5 constitute the second current mirror, and one end of resistance unit R1 is connect with the source of transistor M4, resistance
The other end of unit R 1 connects one end of the temperature control unit, transistor M2, transistor M3 source electrode connect high voltage, crystal
The drain electrode of pipe M4 connects the drain electrode of transistor M2, and the drain electrode of transistor M5 connects the drain electrode of transistor M3, and the source electrode of transistor M5 connects low
Voltage.
9. the temperature compensated current source circuit as shown in claim 7, which is characterized in that the source electrode and grid of the transistor M1
As the power end of the temperature compensated current source circuit, the output current of zero-temperature coefficient is drawn.
10. the temperature compensated current source circuit as shown in claim 6, which is characterized in that the partial pressure unit is resistance, described
It includes transistor M2, transistor M3, transistor M4, transistor M5 and resistance unit R1 that current source, which generates unit, transistor M2 and
Transistor M3 constitutes the first current mirror, and transistor M4, transistor M5 constitute the second current mirror, one end of resistance unit R1 and crystal
The source of pipe M4 connects, and the other end of resistance unit R1 connects one end of the temperature control unit, transistor M2, transistor M3
Source electrode connect high voltage, the drain electrode of transistor M4 connects the drain electrode of transistor M2, and the drain electrode of transistor M5 connects the drain electrode of transistor M3,
The source electrode of transistor M5 connects low-voltage, the electricity of the source electrode and grid of the transistor M2 as the temperature compensated current source circuit
Source draws the output current of zero-temperature coefficient.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710215928.5A CN108664071A (en) | 2017-04-01 | 2017-04-01 | A kind of low-power consumption temperature compensated current source circuit for electronic tag |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710215928.5A CN108664071A (en) | 2017-04-01 | 2017-04-01 | A kind of low-power consumption temperature compensated current source circuit for electronic tag |
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| Publication Number | Publication Date |
|---|---|
| CN108664071A true CN108664071A (en) | 2018-10-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710215928.5A Withdrawn CN108664071A (en) | 2017-04-01 | 2017-04-01 | A kind of low-power consumption temperature compensated current source circuit for electronic tag |
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| CN (1) | CN108664071A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109582076A (en) * | 2019-01-09 | 2019-04-05 | 上海晟矽微电子股份有限公司 | Reference current source |
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| CN101178610A (en) * | 2007-12-05 | 2008-05-14 | 西安标新电子科技有限责任公司 | Circuit outputting adjustable positive and negative or zero-temperature coefficient electrical current and voltage reference |
| CN102385411A (en) * | 2011-09-22 | 2012-03-21 | 钜泉光电科技(上海)股份有限公司 | Reference current generating circuit |
| CN105022441A (en) * | 2014-04-30 | 2015-11-04 | 中国科学院声学研究所 | Temperature-independent current reference |
| CN105824348A (en) * | 2016-05-12 | 2016-08-03 | 中国电子科技集团公司第二十四研究所 | Reference-voltage circuit |
| CN105892545A (en) * | 2016-06-13 | 2016-08-24 | 西安电子科技大学昆山创新研究院 | Voltage conversion circuit |
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2017
- 2017-04-01 CN CN201710215928.5A patent/CN108664071A/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101178610A (en) * | 2007-12-05 | 2008-05-14 | 西安标新电子科技有限责任公司 | Circuit outputting adjustable positive and negative or zero-temperature coefficient electrical current and voltage reference |
| CN102385411A (en) * | 2011-09-22 | 2012-03-21 | 钜泉光电科技(上海)股份有限公司 | Reference current generating circuit |
| CN105022441A (en) * | 2014-04-30 | 2015-11-04 | 中国科学院声学研究所 | Temperature-independent current reference |
| CN105824348A (en) * | 2016-05-12 | 2016-08-03 | 中国电子科技集团公司第二十四研究所 | Reference-voltage circuit |
| CN105892545A (en) * | 2016-06-13 | 2016-08-24 | 西安电子科技大学昆山创新研究院 | Voltage conversion circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109582076A (en) * | 2019-01-09 | 2019-04-05 | 上海晟矽微电子股份有限公司 | Reference current source |
| CN109582076B (en) * | 2019-01-09 | 2023-10-24 | 上海晟矽微电子股份有限公司 | Reference current source |
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Effective date of registration: 20190905 Address after: 610015 China (Sichuan) Free Trade Pilot Zone, Chengdu City, Sichuan Province Applicant after: Sichuan Huada Hengxin Technology Co., Ltd. Address before: Room 303-304, Block A, 112 Liangxiu Road, Shanghai Pudong New Area Free Trade Pilot Area, 2000 Applicant before: HUADA SEMICONDUCTOR CO., LTD. |
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Application publication date: 20181016 |