CN109580635B - 一种金刚石切割硅片片厚不均原因快速确定方法 - Google Patents

一种金刚石切割硅片片厚不均原因快速确定方法 Download PDF

Info

Publication number
CN109580635B
CN109580635B CN201811464720.8A CN201811464720A CN109580635B CN 109580635 B CN109580635 B CN 109580635B CN 201811464720 A CN201811464720 A CN 201811464720A CN 109580635 B CN109580635 B CN 109580635B
Authority
CN
China
Prior art keywords
thickness
silicon wafer
area
face
diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811464720.8A
Other languages
English (en)
Other versions
CN109580635A (zh
Inventor
张爱平
何晋康
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konca Solar Cell Co ltd
Original Assignee
Konca Solar Cell Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konca Solar Cell Co ltd filed Critical Konca Solar Cell Co ltd
Priority to CN201811464720.8A priority Critical patent/CN109580635B/zh
Publication of CN109580635A publication Critical patent/CN109580635A/zh
Application granted granted Critical
Publication of CN109580635B publication Critical patent/CN109580635B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8854—Grading and classifying of flaws
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

本发明公开了一种金刚石切割硅片片厚不均原因快速确定方法，其包括以下步骤：1)在整刀的硅片中随机挑选出单个硅片作为分析样品；2)将分析样品制备端面垂直固定在夹具上；3)通过电镜观察端面的片厚和原始表面形态区域，并测量片厚为H，原始表面形态区域的厚度为h1,若H﹥h1,则确定是因零位的位置移动引起的对刀硅片厚度不均。上述金刚石切割硅片片厚不均原因快速确定方法能够快速分析确定引起硅片厚度不均的原因，提高了异常处理效率，在一定程度上有利于生产效率的提高。

Description

一种金刚石切割硅片片厚不均原因快速确定方法
技术领域
本发明属于太阳能硅片切割技术，尤其是涉及一种金刚石切割硅片片厚不均原因快速确定方法。
背景技术
多线切割机应用金刚线实现了高速切割，切割进给速度可以提高到原来的2倍，并且采用水参与切割加少量的水基切割液，可回收再利用，环保而且能耗低，极大地降低切割成本，真正实现了高效环保生产。但金刚线切割过程经常引起的硅片厚度不均等异常问题，客户也经常投诉片厚不均问题。
造成切割硅片片厚不均的原因可能是因小锭端面与金刚线线网面存在倾斜角，初始切割时，小锭一端角出现先进入线网中被切割，即零位的位置移动。目前还没有因该原因造成硅片厚度不均的快速确定方法。
发明内容
本发明的目的在于提供一种金刚石切割硅片片厚不均原因快速确定方法，以解决现有技术中硅片厚度不均时无法快速确定造成原因的问题。
为达此目的，本发明采用以下技术方案：
一种金刚石切割硅片片厚不均原因快速确定方法，其包括以下步骤：
1)在整刀的硅片中随机挑选出单个硅片作为分析样品；
2)将分析样品制备端面垂直固定在夹具上；
3)通过电镜观察端面的片厚和原始表面形态区域，并测量片厚为H，原始表面形态区域的厚度为h1,若H﹥h1,则确定是因零位的位置移动引起的对刀硅片厚度不均。
特别地，所述步骤3)中原始表面形态区域的判别标准为：端面为倾斜的磨抛痕的区域。
特别地，所述步骤3)中还需通过电镜观察端面的损伤区域，并测量损伤区域的厚度为h2，h1+h2＝H。
特别地，所述步骤3)中损伤区域的判别标准为：端面为横向为犁痕的区域，该区域为钢线与硅锭形成的摩擦损伤。
本发明的有益效果为，与现有技术相比所述金刚石切割硅片片厚不均原因快速确定方法能够快速分析确定引起硅片厚度不均的原因，提高了异常处理效率，在一定程度上有利于生产效率的提高。
附图说明
图1是本发明具体实施方式提供的金刚石切割硅片片厚不均原因快速确定方法的硅片电镜的端面图。
具体实施方式
下面结合附图并通过具体实施方式来进一步说明本发明的技术方案。
请参阅图1所示，图1是本发明具体实施方式提供的金刚石切割硅片片厚不均原因快速确定方法的硅片电镜端面图。
本实施例中，一种金刚石切割硅片片厚不均原因快速确定方法，其包括以下步骤：
步骤一：在整刀的硅片中随机挑选出单个硅片作为分析样品；
步骤二：将分析样品制备端面垂直固定在夹具上；
步骤三：通过电镜观察端面的片厚和原始表面形态区域，并测量片厚为H＝176.6微米，原始表面形态区域的厚度为h1＝118.6微米,端面为倾斜的磨抛痕的区域为原始表面形态区域，端面为横向为犁痕的区域为损伤区域，除去原始表面形态区域其余区域为损伤区域，且损伤区域为钢线与硅锭形成的摩擦损伤，因H﹥h1,即存在则确定是因零位的位置移动引起的对刀硅片厚度不均。
以上实施例只是阐述了本发明的基本原理和特性，本发明不受上述事例限制，在不脱离本发明精神和范围的前提下，本发明还有各种变化和改变，这些变化和改变都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。

Claims (1)

1.一种金刚石切割硅片片厚不均原因快速确定方法，其特征在于，其包括以下步骤：
1)在整刀的硅片中随机挑选出单个硅片作为分析样品；
2)将分析样品制备端面垂直固定在夹具上；
3)通过电镜观察端面的片厚和原始表面形态区域，并测量片厚为H，原始表面形态区域的厚度为h1,端面为倾斜的磨抛痕的区域为原始表面形态区域，端面为横向为犁痕的区域为损伤区域，除去原始表面形态区域其余区域为损伤区域，且损伤区域为钢线与硅锭形成的摩擦损伤，因H﹥h1,即存在则确定是因零位的位置移动引起的对刀硅片厚度不均。
CN201811464720.8A 2018-12-03 2018-12-03 一种金刚石切割硅片片厚不均原因快速确定方法 Active CN109580635B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811464720.8A CN109580635B (zh) 2018-12-03 2018-12-03 一种金刚石切割硅片片厚不均原因快速确定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811464720.8A CN109580635B (zh) 2018-12-03 2018-12-03 一种金刚石切割硅片片厚不均原因快速确定方法

Publications (2)

Publication Number Publication Date
CN109580635A CN109580635A (zh) 2019-04-05
CN109580635B true CN109580635B (zh) 2021-05-18

Family

ID=65926729

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811464720.8A Active CN109580635B (zh) 2018-12-03 2018-12-03 一种金刚石切割硅片片厚不均原因快速确定方法

Country Status (1)

Country Link
CN (1) CN109580635B (zh)

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3117822B2 (ja) * 1992-11-13 2000-12-18 藤平 正道 微細加工方法及びこの方法で加工された加工物
JP3555972B2 (ja) * 1993-08-10 2004-08-18 昭和電工株式会社 磁気ディスクのテクスチャリング加工用組成物及びその製造方法
CN101692024B (zh) * 2009-10-28 2011-06-08 中国航空工业集团公司北京航空制造工程研究所 一种焊缝结构透射电镜试样的手工磨样工具
CN201844980U (zh) * 2010-08-31 2011-05-25 常州视觉龙机电设备有限公司 太阳能硅片的自动检测系统
CN202018275U (zh) * 2011-04-25 2011-10-26 上海神舟新能源发展有限公司 一种针对硅片来料性质的检测设备
CN102241081A (zh) * 2011-06-29 2011-11-16 浙江光益硅业科技有限公司 改善多线切割硅片入刀口处厚薄不均匀的方法及装置
CN202854045U (zh) * 2012-04-28 2013-04-03 新中合光电科技（保靖）有限公司 一种光纤快速连接器端面检查系统
JP5536143B2 (ja) * 2012-06-07 2014-07-02 ユニオンツール株式会社 切削工具用ダイヤモンド皮膜
KR102103712B1 (ko) * 2012-09-03 2020-04-23 히다찌긴조꾸가부시끼가이사 고경도 재료의 멀티 와이어 쏘에 의한 절단 방법
CN103521463B (zh) * 2013-10-29 2016-05-11 高佳太阳能股份有限公司 一种基于光致发光的太阳能硅片分选系统及方法
CN104142349A (zh) * 2014-07-28 2014-11-12 云南省机械研究设计院 一种检测外包装透明薄膜热封缺陷的方法
CN104900509B (zh) * 2015-06-04 2017-10-24 苏州晶牧光材料科技有限公司 金刚石线切割硅片的表面处理方法及制绒方法
CN104966683B (zh) * 2015-07-16 2018-10-16 麦斯克电子材料有限公司 一种采用断面切割腐蚀技术检测硅晶片体内微缺陷的方法
CN105699167B (zh) * 2016-01-26 2019-01-01 哈尔滨工业大学深圳研究生院 一种柔性薄膜脆断方法
CN106876298B (zh) * 2017-04-14 2023-04-25 常州亿晶光电科技有限公司 太阳能电池硅片弯曲度和翘曲度检测装置和检测方法
CN107063806A (zh) * 2017-05-31 2017-08-18 新疆八钢铁股份有限公司 能够快速查找钢板内部缺陷的制样方法
CN107543837B (zh) * 2017-08-25 2020-02-21 郑州磨料磨具磨削研究所有限公司 一种砂轮精磨后硅片损伤层的检测方法
CN107389412B (zh) * 2017-08-31 2019-10-22 山东农业大学 一种虾蟹类富水性组织的石蜡切片制作方法
CN108515458A (zh) * 2018-04-17 2018-09-11 重庆科技学院 一种电镜观察金属打磨夹具

Also Published As

Publication number Publication date
CN109580635A (zh) 2019-04-05

Similar Documents

Publication Publication Date Title
Gupta et al. Study on diamond wire wear, surface quality, and subsurface damage during multi-wire slicing of c-plane sapphire wafer
Chung et al. Depth of cut per abrasive in fixed diamond wire sawing
Liu et al. Subsurface crack damage in silicon wafers induced by resin bonded diamond wire sawing
CN101378002A (zh) 一种用于GaN外延的衬底的加工方法
CN102873770A (zh) 一种偏晶向籽晶的加工方法
Costa et al. Influence of single diamond wire sawing of photovoltaic monocrystalline silicon on the feed force, surface roughness and micro-crack depth
Dai et al. Effects of undeformed chip thickness on grinding temperature and burn-out in high-efficiency deep grinding of Inconel718 superalloys
Wang et al. Investigation of diamond wheel topography in Elliptical Ultrasonic Assisted Grinding (EUAG) of monocrystal sapphire using fractal analysis method
Huang et al. Effect of wire vibration on the materials loss in sapphire slicing with the fixed diamond wire
Meng et al. Mechanical behavior of diamond-sawn multi-crystalline silicon wafers and its improvement
Sekhar et al. The impact of silicon brick polishing on thin (120 μm) silicon wafer sawing yields and fracture strengths in diamond-wire sawing
Sopori et al. Characterizing damage on Si wafer surfaces cut by slurry and diamond wire sawing
CN104441281A (zh) 一种超薄硅片的切割方法
US8974216B2 (en) Device and method for mechanically texturing a silicon wafer intended to comprise a photovoltaic cell, and resulting silicon wafer
Liu et al. Analysis of sawing characteristics of fine diamond wire slicing multicrystalline silicon
CN103077916A (zh) 一种图像检测自动定位晶圆位置的方法
CN109580635B (zh) 一种金刚石切割硅片片厚不均原因快速确定方法
Guan et al. Non-contact grinding/thinning of silicon carbide wafer by pure EDM using a rotary cup wheel electrode
Xu et al. Influence of ingot rocking on the surface quality of multi-wire sawing monocrystalline silicon wafers
CN111638305B (zh) 一种用于确定单晶材料最优加工方向的方法
CN114638084B (zh) 一种基于图像处理的线锯切割单晶硅片全表面线粗糙度预测方法
Behm et al. Challenges of the wire saw wafering process
CN111640687B (zh) 一种单晶晶圆最优划片方向的确定方法
CN201535730U (zh) 一种制作薄膜试样的磨样夹
Banerjee et al. Phase and stress evolution of Si swarf in the diamond-coated wire sawing of Si ingots

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant