CN109571784B - Method for improving qualified rate of indium antimonide cut wafer finished product - Google Patents
Method for improving qualified rate of indium antimonide cut wafer finished product Download PDFInfo
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- CN109571784B CN109571784B CN201811444473.5A CN201811444473A CN109571784B CN 109571784 B CN109571784 B CN 109571784B CN 201811444473 A CN201811444473 A CN 201811444473A CN 109571784 B CN109571784 B CN 109571784B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/042—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with blades or wires mounted in a reciprocating frame
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
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Abstract
The invention relates to a method for improving the qualification rate of an indium antimonide cut wafer finished product, and belongs to the technical field of photoelectric materials. Placing an indium antimonide crystal ingot to be cut on a machine base of a multi-wire cutting machine, completely blocking the periphery of the indium antimonide crystal ingot by a baffle, only opening the upper part of the indium antimonide crystal ingot, adding viscose from the opening until the viscose is filled in a gap between the indium antimonide crystal ingot and the baffle and the upper surface of the viscose is equal to the height of the indium antimonide crystal ingot, completely covering the surface of the indium antimonide crystal ingot by the viscose, placing the indium antimonide crystal ingot until the viscose is completely solidified, and fixing the indium antimonide crystal ingot on the machine base of the multi-wire cutting machine; cutting the indium antimonide crystal ingot by a steel wire with the diameter of 0.08 mm-0.16 mm of a multi-wire cutting machine at the cutting speed of 4 mm/h-5 mm/h; and putting the indium antimonide crystal ingot and the stand into a container filled with cold water, heating until the viscose is softened, and taking the cut indium antimonide wafer out of the stand. The method can greatly improve the yield, increase the number of wafers by more than 30 percent, reduce labor force and improve economic benefit.
Description
Technical Field
The invention relates to a method for improving the qualification rate of an indium antimonide cut wafer finished product, and belongs to the technical field of photoelectric materials.
Background
Indium antimonide (InSb) is a iii-v group compound semiconductor, and has characteristics of narrow band gap width, high mobility, and the like. Table 1 lists the basic characteristics of the indium antimonide material. The indium antimonide material has higher sensitivity in the infrared band, and is a material suitable for manufacturing medium-wave infrared photoelectric detectors, Hall devices and magnetoresistive elements. In recent years, infrared photodetectors manufactured by using the infrared photoelectric detector are widely applied to infrared tracking systems, infrared cameras, infrared thermal imagers, automatic controllers, gas analyzers, infrared thermometers and the like.
TABLE 1 basic characteristics of indium antimonide materials
The quantum efficiency of the infrared detector is closely related to the selected infrared sensitive material, indium antimonide has very high quantum efficiency in a (3-5) mu m wave band, and indium antimonide has the advantages of low cost and stable performance in the preparation of the infrared detector, so more and more countries and organizations begin to pay attention to the unique property of InSb and the application prospect thereof in the field of infrared detectors due to the important application of the indium antimonide in the military and the wide prospect thereof in the civil field, and the attention is drawn more and more; the western countries have made a lot of research and progress in indium antimonide materials and detectors.
Currently, the indium antimonide single crystal growth in the prior art mainly adopts the conventional Czochralski (Czochralski) method, which is an important means for preparing semiconductor bulk single crystal materials. The method can grow crystal without being restricted by a crucible, the external dimension of the crystal can be selected in a certain range, and simultaneously, the prepared crystal has higher integrity. The device for growing the single crystal by the Czochralski method mainly comprises a heater, a quartz tube, a crucible and a lifting rod, wherein the heater heats a quartz tube area where the crucible is placed to melt polycrystalline materials in the crucible, a seed crystal is inserted into the melt through the lifting rod, then the seed crystal is slowly lifted, a new crystal continuously grows at the lower part of the seed crystal, and protective gas is filled in the quartz tube in the process of growing the single crystal.
The indium antimonide crystal used as the material of the infrared detector needs to be subjected to two processes of directional slicing and nondestructive grinding and polishing of a wafer before use. In the prior art, an internal cutting machine is used for directionally slicing indium antimonide crystals, the mechanical strength of an indium antimonide material is low, the thickness of a wafer is selected to be at least more than 1.2mm during internal slicing for reducing the splitting rate, and the cut thickness is 0.75 mm. The use of the inner circular machine for slicing is the biggest restriction factor influencing the great reduction of the slice thickness, so that the slice yield is low and the benefit is low.
The multi-wire cutting machine has the advantages of small bending degree of slice (BOW), small warping degree (Warp), good parallelism (Tarp), small thickness tolerance, small slice loss, small roughness, high slice yield, high productivity, high production efficiency and the like. The application of modern precise control technology ensures the reliability of the cutting tool to be fully guaranteed, is a necessary choice for large-scale cutting and production efficiency improvement, gradually replaces traditional cutting modes such as a saw blade, a grinding wheel and inner circle cutting, and is widely applied to cutting of hard and brittle materials such as semiconductors.
Due to the physicochemical and metallurgical characteristics of the indium antimonide material, the preparation of high-quality indium antimonide crystals is difficult, and the preparation is still a worldwide problem so far, so that the cost is high, and the price of two-inch indium antimonide wafer materials meeting the use performance is more than 5000 yuan per wafer. Currently, the annual production of qualified indium antimonide wafers exceeds 2000, and on this basis, two cutting methods are compared in terms of efficiency and loss. Assuming that the thickness requirements of the final indium antimonide wafer are all 0.75mm at present, if an inner circle cutting machine is used for cutting, the cutting feed thickness is 1.2mm (the knife gap is 0.35mm) under the condition of tolerable splitting rate, and if a multi-wire cutting machine is used, the cutting feed thickness is only 0.9mm (the wire diameter is 0.12mm), so that 40 pieces of material cut by the inner circle cutting machine into 30 pieces can be cut by the multi-wire cutting machine. Even if an inner circle cutting machine is used for cutting 2000 pieces, 2666 pieces can be cut out if a multi-wire cutting machine is used, 666 pieces can be added, and the part which is lost due to the breakage of the inner circle cutting piece is not counted. Therefore, compared with the current wafer value lost by the round cutting of the multi-wire cutting machine every year, the value of 666 multiplied by 5000 yuan which is 3330000 yuan which is 333 yuan can be calculated, so that the multi-wire cutting machine replaces the current round cutting machine to cut the indium antimonide crystal, huge cost saving is brought, and the multi-wire cutting machine is the most effective way for increasing the wafer yield by times, and the necessity is not clear.
However, due to the physicochemical characteristics of the indium antimonide material, when a multi-wire cutting machine is used for cutting, if appropriate equipment and cutting conditions are not selected, and the bottom of the indium antimonide material is only fixed on a base of the cutting machine by a conventional method for cutting, the problem of chipping is easily caused, and the yield is low, so a method for improving the yield, reducing the breakage rate or eliminating the breakage rate is urgently needed.
Disclosure of Invention
In order to improve the yield of the indium antimonide crystal ingot cut wafer, the invention aims to provide a method for improving the yield of the finished indium antimonide cut wafer.
In order to achieve the purpose of the invention, the following technical scheme is provided.
A method for improving the qualification rate of indium antimonide cut wafer finished products comprises the following steps:
(1) placing an indium antimonide crystal ingot to be cut on a machine base of a multi-wire cutting machine, completely blocking the periphery of the indium antimonide crystal ingot by a baffle, opening the periphery of the indium antimonide crystal ingot only at the upper part, adding viscose from the opening until the viscose is filled in a gap between the indium antimonide crystal ingot and the baffle and the upper surface of the viscose is equal to the height of the indium antimonide crystal ingot, ensuring that the surface of the indium antimonide crystal ingot is completely covered by the viscose, placing the indium antimonide crystal ingot until the viscose is completely cured, and fixing the indium antimonide crystal ingot on the machine base of the multi;
(2) cutting the indium antimonide crystal ingot by a steel wire with the diameter (phi) of 0.08-0.16 mm of a multi-wire cutting machine at the cutting speed of 4-5 mm/h;
(3) and after the indium antimonide crystal ingot is cut, putting the indium antimonide crystal ingot and the stand into a container filled with cold water, heating until the viscose is softened, and taking the cut indium antimonide wafer out of the stand.
Wherein the viscose consists of a Q-FC-3HA hardener and a Q-FC-3RA main agent which are produced by Nippon Nissan chemical industry Co., Ltd, and the viscose is prepared for use; uniformly mixing according to the volume ratio of 1: 1.
The baffle plate is made of a material with the strength and rigidity less than or equal to those of a solidified viscose, so that the cutting of the multi-wire cutting machine is prevented from being influenced; preferably, the baffle is a polyvinyl chloride (PVC) resin material.
Preferably, the multi-wire cutter is a MWS-610SD multi-wire cutter of Hippocampus bird company, Japan.
Advantageous effects
1. The invention provides a method for improving the qualification rate of indium antimonide cut wafer finished products, which is characterized in that a multi-wire cutting machine is selected to replace the traditional inner circle cutting machine to cut indium antimonide crystal ingots, one phi 50mm indium antimonide crystal ingot of the inner circle cutting machine needs about 2 weeks in the past, the process can be finished by the multi-wire cutting machine within eight hours at present, and the working efficiency is greatly improved;
2. the invention provides a method for improving the qualification rate of finished products of indium antimonide cut wafers, which can greatly improve the finished products by creatively working the specification of steel wires, the cutting speed, the fixing mode of indium antimonide crystal ingots and fixing materials of a multi-wire cutting machine, and can increase the number of finished wafers by more than 30%, reduce labor force and improve economic benefits.
Detailed Description
The following specific examples are provided to illustrate the invention, but are not intended to limit the scope of the invention.
Example 1
A method for improving the qualification rate of indium antimonide cut wafer finished products comprises the following steps:
(1) placing an indium antimonide crystal ingot with the diameter (phi) of 50mm to be cut on a machine base of an MWS-610SD multi-wire cutting machine of a Nippon bird company, completely blocking the periphery of the indium antimonide crystal ingot by using a baffle, adhering the baffle on the machine base by using viscose to form a cuboid frame structure, only opening the upper part of the cuboid frame structure, adding the viscose from the opening until the viscose is filled in a gap between the indium antimonide crystal ingot and the baffle and the upper surface of the viscose is equal to the height of the indium antimonide crystal ingot, ensuring that the surface of the crystal ingot is completely covered by the viscose, placing the crystal ingot until the viscose is completely solidified, and fixing the indium antimonide crystal ingot on the machine base of the multi-wire;
the baffle consists of 2 baffles with the specification of 100mm multiplied by 70mm multiplied by 10mm and 2 baffles with the specification of 70mm multiplied by 10mm according to the diameter and the length of the indium antimonide crystal ingot; the baffle plate is made of PVC resin.
The viscose is prepared by uniformly mixing a Q-FC-3HA hardening agent and a Q-FC-3RA main agent which are produced by Japan chemical industry Seiko corporation according to the volume ratio of 1:1 by using a glass rod, and is used immediately after being prepared.
(2) Cutting the indium antimonide crystal ingot by a steel wire with the diameter of 0.15mm of a multi-wire cutting machine at the cutting speed of 5 mm/h;
(3) and after the indium antimonide crystal ingot is cut, putting the indium antimonide crystal ingot and the machine base into a stainless steel washbasin filled with cold water, heating for one hour by using an induction cooker until the viscose is softened, taking the cut indium antimonide wafers out of the machine base one by one, and cutting together to obtain 50 indium antimonide wafers, wherein each indium antimonide wafer is complete, and the breakage rate is zero.
Example 2
A method for improving the qualification rate of indium antimonide cut wafer finished products comprises the following steps:
(1) the same as the step (1) of the example;
(2) cutting the indium antimonide crystal ingot by a steel wire with the diameter of 0.08mm of a multi-wire cutting machine at the cutting speed of 4 mm/h;
(3) in the same way as the step (3) of example 1, 50 indium antimonide wafers were obtained by co-dicing, each wafer was complete and the breakage rate was zero.
Comparative example 1
A method of slicing a wafer from an indium antimonide ingot, the method comprising the steps of:
the viscose glue is 502 glue, the 502 glue is softened by heating with an electric furnace after slicing, and the rest steps are the same as the example 1; and taking the cut indium antimonide wafers out of the machine base one by one, and cutting the indium antimonide wafers to obtain 41 complete indium antimonide wafers with 10 damaged wafers and 19 percent of damage rate.
Comparative example 2
A method of slicing a wafer from an indium antimonide ingot, the method comprising the steps of:
fixing the bottom of the indium antimonide crystal ingot on a machine base of a multi-wire cutting machine by using viscose, wherein baffles are not arranged around the indium antimonide crystal ingot, the viscose is 502 glue, heating the indium antimonide crystal ingot by using an electric furnace after slicing is finished to soften the 502 glue, and the rest steps are the same as those of the embodiment 1; and taking out the cut indium antimonide wafers one by one from the machine base, wherein the breakage rate of the wafers is 19.6%.
Claims (5)
1. A method for improving the qualification rate of indium antimonide cut wafer finished products is characterized in that: the method comprises the following steps:
(1) placing an indium antimonide crystal ingot to be cut on a machine base of a multi-wire cutting machine, completely blocking the periphery of the indium antimonide crystal ingot by a baffle, only opening the upper part of the indium antimonide crystal ingot, adding viscose from the opening until the viscose is filled in a gap between the indium antimonide crystal ingot and the baffle and the upper surface of the viscose is equal to the height of the indium antimonide crystal ingot, completely covering the surface of the indium antimonide crystal ingot by the viscose, placing the indium antimonide crystal ingot until the viscose is completely solidified, and fixing the indium antimonide crystal ingot on the machine base of the multi-wire cutting machine;
(2) cutting the indium antimonide crystal ingot by a steel wire with the diameter of 0.08 mm-0.16 mm of a multi-wire cutting machine at the cutting speed of 4 mm/h-5 mm/h;
(3) after the indium antimonide crystal ingot is cut, putting the indium antimonide crystal ingot and the stand into a container filled with cold water, heating until the viscose is softened, and taking out the cut indium antimonide wafer from the stand;
wherein the viscose consists of a Q-FC-3HA hardener and a Q-FC-3RA main agent which are produced by Nippon Nissan chemical industry Co., Ltd; the baffle plate is made of a material with the strength and rigidity less than or equal to those of solidified viscose glue.
2. The method for improving the qualification rate of the indium antimonide cut wafer finished product according to claim 1, wherein the method comprises the following steps: the viscose is prepared by uniformly mixing a Q-FC-3HA hardening agent and a Q-FC-3RA main agent which are produced by Japan chemical industry Seiko, and the volume ratio of the hardening agent to the Q-FC-3RA main agent is 1: 1.
3. The method for improving the qualification rate of the indium antimonide cut wafer finished product according to claim 1 or 2, wherein the method comprises the following steps: the baffle is made of PVC resin material.
4. The method for improving the qualification rate of the indium antimonide cut wafer finished product according to claim 1 or 2, wherein the method comprises the following steps: the multi-wire cutter is a MWS-610SD multi-wire cutter of Nippon Gaoyou company.
5. The method for improving the qualification rate of the indium antimonide cut wafer finished product according to claim 3, wherein the method comprises the following steps: the multi-wire cutter is a MWS-610SD multi-wire cutter of Nippon Gaoyou company.
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| WO2007063559A1 (en) * | 2005-11-29 | 2007-06-07 | Pellegrini Meccanica S.P.A. | Multiple wire machine for cutting stone materials |
| EP2162638A2 (en) * | 2007-05-25 | 2010-03-17 | Simec S.P.A. | Device for tensioning flexible annular members and tensioning assembly comprising such device |
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| CN103522432A (en) * | 2013-10-28 | 2014-01-22 | 江西赛维Ldk太阳能高科技有限公司 | Silicon briquette cutting method and device |
| CN105575856A (en) * | 2015-12-23 | 2016-05-11 | 中国电子科技集团公司第十一研究所 | Device for carrying out circle-cutting and chamfering on InSb |
| CN107116712A (en) * | 2017-05-26 | 2017-09-01 | 杨凌美畅新材料有限公司 | A kind of method for electroplating diamond wire high efficiency cutting silicon chip |
-
2018
- 2018-11-29 CN CN201811444473.5A patent/CN109571784B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007063559A1 (en) * | 2005-11-29 | 2007-06-07 | Pellegrini Meccanica S.P.A. | Multiple wire machine for cutting stone materials |
| EP2162638A2 (en) * | 2007-05-25 | 2010-03-17 | Simec S.P.A. | Device for tensioning flexible annular members and tensioning assembly comprising such device |
| CN102059748A (en) * | 2010-12-13 | 2011-05-18 | 天津市环欧半导体材料技术有限公司 | Process for cutting silicon chip by using steel wire with diameter of 0.11 millimeter |
| CN103522432A (en) * | 2013-10-28 | 2014-01-22 | 江西赛维Ldk太阳能高科技有限公司 | Silicon briquette cutting method and device |
| CN105575856A (en) * | 2015-12-23 | 2016-05-11 | 中国电子科技集团公司第十一研究所 | Device for carrying out circle-cutting and chamfering on InSb |
| CN107116712A (en) * | 2017-05-26 | 2017-09-01 | 杨凌美畅新材料有限公司 | A kind of method for electroplating diamond wire high efficiency cutting silicon chip |
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Address after: No.31 Jiaochang East Road, Kunming, Yunnan 650223 Patentee after: Yunnan Kunwu Xinyue Photoelectric Technology Co.,Ltd. Address before: No.31 Jiaochang East Road, Kunming, Yunnan 650223 Patentee before: YUNNAN BEIFANG KUNWU PHOTOELECTRIC TECHNOLOGY DEVELOPMENT CO.,LTD. |
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