CN109571784A - A method of improving indium antimonide cut crystal product qualified rate - Google Patents
A method of improving indium antimonide cut crystal product qualified rate Download PDFInfo
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- CN109571784A CN109571784A CN201811444473.5A CN201811444473A CN109571784A CN 109571784 A CN109571784 A CN 109571784A CN 201811444473 A CN201811444473 A CN 201811444473A CN 109571784 A CN109571784 A CN 109571784A
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- indium antimonide
- crystal ingot
- viscose glue
- cut
- slicing machine
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/042—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with blades or wires mounted in a reciprocating frame
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
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- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention relates to a kind of methods for improving indium antimonide cut crystal product qualified rate, belong to optoelectronic materials technology.The method places indium antimonide crystal ingot to be cut by the base in multi-wire slicing machine, indium antimonide crystal ingot surrounding is lived with the complete enclosing of baffle, only it is open above, viscose glue is added from opening, to viscose glue full of indium antimonide crystal ingot and the gap between baffle and until viscose glue upper surface and indium antimonide crystal ingot are highly equal, the adhesive all standing in indium antimonide crystal ingot surface, placement are fully cured to viscose glue, and indium antimonide crystal ingot is fixed on the base of multi-wire slicing machine；Indium antimonide crystal ingot is cut with the cutting speed of 4mm/h~5mm/h with the steel wire that multi-wire slicing machine diameter is 0.08mm~0.16mm；Indium antimonide crystal ingot and base are put into togerther in the container for filling cold water, viscose glue softening is heated to, the indium antimonide wafer of well cutting is taken out from base.The method can be such that yield rate greatly improves, and number of wafers increases by 30% or more, reduce labour, improve economic benefit.
Description
Technical field
The present invention relates to a kind of methods for improving indium antimonide cut crystal product qualified rate, belong to photoelectric material technology neck
Domain.
Background technique
Indium antimonide (InSb) is group Ⅲ-Ⅴ compound semiconductor, it has the characteristics that low energy gap width and high mobility.Table
1 lists the fundamental characteristics of indium antimonide materials.Indium antimonide materials have higher sensitivity in infrared band, are a kind of suitable for making
The material of medium-wave infrared photodetector, hall device and magnetoresistive element.With the infrared photoelectric detector of its preparation in recent years
Infra-red tracing system, infrared camera, thermal infrared imager, automatic controller, gas analyzer and in terms of
It is widely applied.
The fundamental characteristics of 1 indium antimonide materials of table
The quantum efficiency of infrared detector and the infrared-sensitive material of selection are closely related, and indium antimonide is in (3~5) mu m waveband
With very high quantum efficiency, in addition indium antimonide possesses low cost and the stable advantage of performance on preparing infrared detector, because
This due to infrared detector of indium antimonide with it in the important application of military aspect and in the bright prospects of civilian aspect, it is more and more
Country and mechanism start to notice the unique property of InSb and its application prospect in infrared detector field, cause more next
More extensive concern；Western countries have carried out numerous studies and have been had made great progress in terms of indium antimonide materials and detector.
Insb Single Crystals growth in currently available technology is mainly using conventional Czochralski (cutting krousky) method
Growth, this is a kind of important means for preparing semiconductor bulk single crystal materials.This method can not be constrained by crucible and be grown brilliant
The outer dimension of body, crystal may be selected in a certain range, meanwhile, prepared crystal has higher integrality.
The equipment that Czochralski method grows monocrystalline mainly includes heater, quartz ampoule, crucible and lifting rod, and heater is to placement
The quartz ampoule region of crucible is heated, and the polycrystalline material inside crucible is melted, and is inserted into seed crystal in melt by lifting rod, then
Seed crystal is slowly lifted again, new crystal is constantly grown in seed crystal lower part, is filled with inside quartz ampoule during crystal growth
Protective gas.
Indium antimonide crystal as infrared detector material needs the lossless mill for being first oriented slice and chip before use
Throw two processes.Slice, the machinery of indium antimonide materials are oriented to indium antimonide body crystalline substance using inner circle cutting machine in the prior art
Intensity is low, for reduce sliver rate, inner circle be sliced when wafer thickness selection at least will in 1.2mm or more, cut with a thickness of
0.75mm.The use of inner circle machine-cut piece is to influence piece thickness substantially thinned maximum restraining factors, leads to that piece rate is low, benefit is low.
Multi-wire slicing machine is small with slice curvature (BOW), angularity (Warp) is small, the depth of parallelism (Tarp) is good, thickness is public
The advantages such as difference is small, slice loss is small, roughness is small, piece rate is high, production capacity is high and production efficiency is high.Modern precision control technology
Application ensure its reliability there has also been abundant, be scale cutting and the inevitable choice for improving production efficiency, and just gradually
Replace traditional cutting modes such as saw blade, grinding wheel and inner circle cutting, is widely used to the hard brittle materials such as semiconductor
Cutting.
Due to the physical chemistry and metallurgy characteristic of indium antimonide materials, so that the preparation of high quality indium antimonide crystal is relatively more tired
Difficulty is still a global problem till now, causes its cost high, meets two inches of antimony of service performance
Indium wafer material price every is at 5000 yuan or more.Currently, being more than 2000 to produce qualified indium antimonide wafer per year, based on this
The calculating for carrying out two kinds of cutting mode benefits and loss aspect is compared.Assuming that the thickness requirement of final indium antimonide wafer is current
0.75mm, if being sliced using inner circle cutting machine, under conditions of tolerable sliver rate, the feed thickness of cutting is 1.2mm (knife
Stitch 0.35mm), and if only need 0.9mm (using line footpath 0.12mm) using multi-wire slicing machine feed thickness, thus can calculate inner circle
The material multi-wire slicing machine of cutting machine-cut 30 can cut 40.2000 are cut using inner circle cutting machine, if using multifibres instead
Cutting machine can then cut out 2666, can have more piece 666, this is also not counted in the part that inner circle slice fragmentation is lost more.So can
Calculate the chip value=666 × 5000 yuan=3330000 yuan=333 compared to multi-wire slicing annual inner circle cutting loss at present
(Wan Yuan) therefore, multi-wire slicing machine replaces present inner circle cutting machine to carry out indium antimonide crystal slice, will bring huge cost
It saves, and significantly improves the most effective approach of chip piece rate, necessity is self-evident.
But due to the physicochemical characteristics of indium antimonide materials, when being cut using multi-wire slicing machine-cut, if not selecting to close
Its bottom is only fixed on the base of cutting machine using conventional method and is cut by suitable equipment and cutting condition by indium antimonide materials
It cuts, fragment problems is easily occurring, yield rate is lower, therefore a kind of urgently raising yield rate, reduces breakage rate or eliminates breakage rate
Method.
Summary of the invention
In order to improve the yield rate of indium antimonide crystal ingot cut crystal, the purpose of the present invention is to provide a kind of raising indium antimonides
The method of cut crystal product qualified rate.
To achieve the purpose of the present invention, following technical scheme is provided.
A method of indium antimonide cut crystal product qualified rate is improved, the method comprises the following steps:
(1) indium antimonide crystal ingot to be cut is placed in the base of multi-wire slicing machine, by indium antimonide crystal ingot surrounding baffle
Complete enclosing is lived, and is only open above, and viscose glue is added from opening, until viscose glue is full of the gap between indium antimonide crystal ingot and baffle
And until viscose glue upper surface is equal with indium antimonide crystal ingot height, guarantee the adhesive all standing in indium antimonide crystal ingot surface, places to viscous
Glue is fully cured, and indium antimonide crystal ingot is fixed on the base of multi-wire slicing machine；
(2) with the steel wire that multi-wire slicing machine diameter (Ф) is 0.08mm~0.16mm with the cutting speed of 4mm/h~5mm/h
Indium antimonide crystal ingot is cut；
(3) after the completion of the cutting of indium antimonide crystal ingot, indium antimonide crystal ingot and base is put into togerther in the container for filling cold water, added
Heat to viscose glue softens, and the indium antimonide wafer of well cutting is taken out from base.
Wherein, the Q-FC-3HA curing agent and Q-FC-3RA host agent that the viscose glue is produced by Japanese daily use chemicals Jinggong Co., Ltd
Composition, it is ready-to-use；It is that 1:1 is uniformly mixed according to volume ratio to be made.
The barrier material is intensity, rigidity less than or equal to the material for solidifying viscose glue, to avoid multi-wire slicing machine is influenced
Cutting；It is preferred that the baffle is polyvinyl chloride (PVC) resin material.
It is preferred that the multi-wire slicing machine is the multi-wire slicing machine of the MWS-610SD of Gao Niao company, Japan.
Beneficial effect
1. the present invention provides a kind of method for improving indium antimonide cut crystal product qualified rate, the method passes through selection
Multi-wire slicing machine substitutes traditional inner circle cutting machine cutting indium antimonide crystal ingot, and the past uses piece Ф 50mm indium antimonide of inner circle cutting machine
Crystal ingot took around for 2 week, can be completed, be greatly improved work efficiency with multi-wire slicing machine eight hours now；
2. the present invention provides a kind of method for improving indium antimonide cut crystal product qualified rate, the method passes through to more
Wire gauge, cutting speed, the fixed form of indium antimonide crystal ingot and the fixed material of silk cutting machine carry out creative work, obtain
A kind of cutting method that can greatly improve finished product, the method make finished product number of wafers increase by 30% or more, reduce labor
Power improves economic benefit.
Specific embodiment
Specific embodiment is described in detail the present invention below, but not as the restriction to the invention patent.
Embodiment 1
A method of indium antimonide cut crystal product qualified rate is improved, the method comprises the following steps:
(1) diameter to be cut is placed in the base of the MWS-610SD multi-wire slicing machine of Japanese Gao Niao company
(Ф) is the indium antimonide crystal ingot of 50mm, and indium antimonide crystal ingot surrounding is lived with the complete enclosing of baffle, the baffle is sticked to viscose glue
On base, cuboid framework structure is formed, is only open above, viscose glue is added from opening, until viscose glue is full of indium antimonide crystal ingot
Until gap and viscose glue upper surface between baffle are equal with indium antimonide crystal ingot height, guarantee that crystal ingot surface is adhesive and cover entirely
Lid, placement are fully cured to viscose glue, and indium antimonide crystal ingot is fixed on the base of multi-wire slicing machine；
The baffle is 100mm × 70mm × 10mm by 2 block specifications according to the diameter and length of the indium antimonide crystal ingot
Baffle and 2 block specifications are 70mm × 70mm × 10mm baffle composition；Barrier material is polyvinyl chloride resin material.
The viscose glue be Japanese daily use chemicals Jinggong Co., Ltd production Q-FC-3HA curing agent and Q-FC-3RA host agent according to
Volume ratio, which is that the allotment of 1:1 glass bar is uniformly mixed, to be made, ready-to-use.
(2) indium antimonide crystal ingot is cut with the cutting speed of 5mm/h with the steel wire that multi-wire slicing machine diameter is 0.15mm
It cuts；
(3) after the completion of the cutting of indium antimonide crystal ingot, indium antimonide crystal ingot and base are put into togerther to the stainless steel face for filling cold water
In basin, is softened with one hour of electromagnetic oven heating to viscose glue, the indium antimonide wafer of well cutting is taken out one by one from base,
Cutting obtains indium antimonide wafer 50 altogether, and every complete, breakage rate zero.
Embodiment 2
A method of indium antimonide cut crystal product qualified rate is improved, the method comprises the following steps:
(1) same to embodiment step (1)；
(2) indium antimonide crystal ingot is cut with the cutting speed of 4mm/h with the steel wire that multi-wire slicing machine diameter is 0.08mm
It cuts；
(3) with 1 step of embodiment (3), cutting obtains indium antimonide wafer 50 altogether, and every complete, breakage rate zero.
Comparative example 1
A kind of method of indium antimonide crystal ingot cut crystal, the method comprises the following steps:
Viscose glue is 502 glue, and electricity consumption stove heating makes 502 gum softenings after the completion of slice, remaining step is the same as embodiment 1；It will cutting
Good indium antimonide wafer takes out one by one from base, and cutting obtains complete indium antimonide wafer 41 altogether, 10 damaged,
Breakage rate is 19%.
Comparative example 2
A kind of method of indium antimonide crystal ingot cut crystal, the method comprises the following steps:
Indium antimonide crystal ingot bottom is fixed on the base of multi-wire slicing machine with viscose glue, is around not provided with baffle, viscose glue is
502 glue, electricity consumption stove heating makes 502 gum softenings after the completion of slice, remaining step is the same as embodiment 1；By the indium antimonide wafer of well cutting
It is taken out one by one from base, wafer breakage rate is 19.6%.
Claims (5)
1. a kind of method for improving indium antimonide cut crystal product qualified rate, it is characterised in that: the method comprises the following steps:
(1) indium antimonide crystal ingot to be cut is placed in the base of multi-wire slicing machine, indium antimonide crystal ingot surrounding baffle is complete
Enclosing is lived, and is only open above, and viscose glue is added from opening, until viscose glue is full of the gap between indium antimonide crystal ingot and baffle and glues
Until glue upper surface is equal with indium antimonide crystal ingot height, the adhesive all standing in indium antimonide crystal ingot surface is placed completely solid to viscose glue
Change, indium antimonide crystal ingot is fixed on the base of multi-wire slicing machine；
(2) steel wire for being 0.08mm~0.16mm with multi-wire slicing machine diameter is with the cutting speed of 4mm/h~5mm/h to indium antimonide
Crystal ingot is cut；
(3) after the completion of the cutting of indium antimonide crystal ingot, indium antimonide crystal ingot and base is put into togerther in the container for filling cold water, are heated to
Viscose glue softening, the indium antimonide wafer of well cutting is taken out from base；
Wherein, the Q-FC-3HA curing agent and Q-FC-3RA host agent group that the viscose glue is produced by Japanese daily use chemicals Jinggong Co., Ltd
At；The barrier material is intensity, rigidity less than or equal to the material for solidifying viscose glue.
2. a kind of method for improving indium antimonide cut crystal product qualified rate according to claim 1, it is characterised in that: institute
It is 1:1 that Q-FC-3HA curing agent and Q-FC-3RA host agent that viscose glue is produced by Japanese daily use chemicals Jinggong Co., Ltd, which are stated, according to volume ratio
It is uniformly mixed and is made.
3. a kind of method for improving indium antimonide cut crystal product qualified rate according to claim 1 or 2, feature exist
In: the baffle is polyvinyl chloride resin material.
4. a kind of method for improving indium antimonide cut crystal product qualified rate according to claim 1 or 2, feature exist
In: the multi-wire slicing machine is the multi-wire slicing machine of the MWS-610SD of Gao Niao company, Japan.
5. a kind of method for improving indium antimonide cut crystal product qualified rate according to claim 3, it is characterised in that: institute
State the multi-wire slicing machine for the MWS-610SD that multi-wire slicing machine is Gao Niao company, Japan.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811444473.5A CN109571784B (en) | 2018-11-29 | 2018-11-29 | Method for improving qualified rate of indium antimonide cut wafer finished product |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811444473.5A CN109571784B (en) | 2018-11-29 | 2018-11-29 | Method for improving qualified rate of indium antimonide cut wafer finished product |
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| CN109571784A true CN109571784A (en) | 2019-04-05 |
| CN109571784B CN109571784B (en) | 2021-01-19 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007063559A1 (en) * | 2005-11-29 | 2007-06-07 | Pellegrini Meccanica S.P.A. | Multiple wire machine for cutting stone materials |
| EP2162638A2 (en) * | 2007-05-25 | 2010-03-17 | Simec S.P.A. | Device for tensioning flexible annular members and tensioning assembly comprising such device |
| CN102059748A (en) * | 2010-12-13 | 2011-05-18 | 天津市环欧半导体材料技术有限公司 | Process for cutting silicon chip by using steel wire with diameter of 0.11 millimeter |
| CN103522432A (en) * | 2013-10-28 | 2014-01-22 | 江西赛维Ldk太阳能高科技有限公司 | Silicon briquette cutting method and device |
| CN105575856A (en) * | 2015-12-23 | 2016-05-11 | 中国电子科技集团公司第十一研究所 | Device for carrying out circle-cutting and chamfering on InSb |
| CN107116712A (en) * | 2017-05-26 | 2017-09-01 | 杨凌美畅新材料有限公司 | A kind of method for electroplating diamond wire high efficiency cutting silicon chip |
-
2018
- 2018-11-29 CN CN201811444473.5A patent/CN109571784B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007063559A1 (en) * | 2005-11-29 | 2007-06-07 | Pellegrini Meccanica S.P.A. | Multiple wire machine for cutting stone materials |
| EP2162638A2 (en) * | 2007-05-25 | 2010-03-17 | Simec S.P.A. | Device for tensioning flexible annular members and tensioning assembly comprising such device |
| CN102059748A (en) * | 2010-12-13 | 2011-05-18 | 天津市环欧半导体材料技术有限公司 | Process for cutting silicon chip by using steel wire with diameter of 0.11 millimeter |
| CN103522432A (en) * | 2013-10-28 | 2014-01-22 | 江西赛维Ldk太阳能高科技有限公司 | Silicon briquette cutting method and device |
| CN105575856A (en) * | 2015-12-23 | 2016-05-11 | 中国电子科技集团公司第十一研究所 | Device for carrying out circle-cutting and chamfering on InSb |
| CN107116712A (en) * | 2017-05-26 | 2017-09-01 | 杨凌美畅新材料有限公司 | A kind of method for electroplating diamond wire high efficiency cutting silicon chip |
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| CN109571784B (en) | 2021-01-19 |
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Address after: No.31 Jiaochang East Road, Kunming, Yunnan 650223 Patentee after: Yunnan Kunwu Xinyue Photoelectric Technology Co.,Ltd. Address before: No.31 Jiaochang East Road, Kunming, Yunnan 650223 Patentee before: YUNNAN BEIFANG KUNWU PHOTOELECTRIC TECHNOLOGY DEVELOPMENT CO.,LTD. |
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