CN109560164A - A kind of preparation method of wide range radiation detector absorbed layer - Google Patents
A kind of preparation method of wide range radiation detector absorbed layer Download PDFInfo
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- CN109560164A CN109560164A CN201710872180.6A CN201710872180A CN109560164A CN 109560164 A CN109560164 A CN 109560164A CN 201710872180 A CN201710872180 A CN 201710872180A CN 109560164 A CN109560164 A CN 109560164A
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- 230000005855 radiation Effects 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 53
- 238000009413 insulation Methods 0.000 claims abstract description 20
- 238000000576 coating method Methods 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims abstract description 18
- 238000005485 electric heating Methods 0.000 claims abstract description 18
- 239000006096 absorbing agent Substances 0.000 claims abstract description 5
- 239000000853 adhesive Substances 0.000 claims description 20
- 230000001070 adhesive effect Effects 0.000 claims description 20
- 238000001035 drying Methods 0.000 claims description 19
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 238000005507 spraying Methods 0.000 claims description 11
- 238000002310 reflectometry Methods 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 4
- 239000007921 spray Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229940067573 brown iron oxide Drugs 0.000 claims description 2
- 230000001680 brushing effect Effects 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 239000002048 multi walled nanotube Substances 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 230000007480 spreading Effects 0.000 claims description 2
- 238000003892 spreading Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000005439 thermosphere Substances 0.000 claims description 2
- 229920002521 macromolecule Polymers 0.000 claims 2
- 238000004026 adhesive bonding Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000007711 solidification Methods 0.000 claims 1
- 230000008023 solidification Effects 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 9
- 238000001514 detection method Methods 0.000 abstract description 5
- 229920001940 conductive polymer Polymers 0.000 abstract description 3
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 239000002861 polymer material Substances 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 10
- 238000011161 development Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000011358 absorbing material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000007592 spray painting technique Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Abstract
The present invention discloses a kind of preparation method of wide range radiation detector absorbed layer, belongs to terahertz detection technical field, and wide range radiation detector absorbed layer is followed successively by the main absorbed layer of Terahertz, electric heating layer, electric insulation layer, Terahertz reflecting layer from top layer to bottom.Wide range radiation detector absorber thickness controls between 0.2mm~0.5mm, the main absorbed layer of Terahertz is sprayed using 2-3 kind conductive polymer material, electric heating layer is high using electric heating coating resistance value stability, thickness is thin, hardness is high, thermally conductive, and there can be the material centainly absorbed to Terahertz, electric insulation layer is used to be isolated the base material of electric heating layer and detector hot end face, and Terahertz reflecting layer is sprayed at the another side of electric insulation layer.The absorbed layer of formation has higher hardness film characteristics, with the high characteristic of thermal conductivity, effectively increases the response speed of detector, and reducing environmental temperature fluctuation influences, and reduces absorbed layer heat loss, the stability of coating absorptivity is effectively ensured.
Description
Technical field
The invention belongs to terahertz detection technical field, it is related to from millimeter wave band to terahertz wave band and infrared, visible
The high thermal conductivity of optical band and the material of higher absorption rate, especially a kind of preparation side of wide range radiation detector absorbed layer
Method.
Background technique
Terahertz emission is the general designation of the electromagnetic radiation to a specific band, and frequency range is 0.1THz~10THz,
It is the special wave band between optics far infrared and microwave, between electronics and optics the two research fields, has both
There is the characteristic of optics and microwave.In recent years, have benefited from the development of ultrafast photoelectron technology and low scale semiconductor technology, be terahertz
Hereby wave band provides suitable light source and detection means, and Terahertz Science and Technology obtains development at full speed, make it was recognized that
Terahertz has very important academic and application value in various fields such as physics, chemistry, biology, medicine, material, astronomy,
Terahertz science and technology is set to become current one of forefront, the research field of hottest point in the world.
Although it has been recognized that the important scientific meaning of terahertz wave band, the wave band are still to need full-scale development
With the electromagnetic frequency window of research, still there is the factor for much restricting its development and application at present, terahertz signal Detection Techniques
Shortage is one of restraining factors.The problems such as this includes detectivity, bandwidth, response time and detector accuracy.Therefore
There is fast response time, the detector that high sensitivity, resolving power is enough, stability is strong will greatly push Terahertz Technology for development
Development.
The key of production terahertz emission detector is to find the material for having good absorption rate in terahertz wave band, and grind
Produce the measuring device of low uncertainty of measurement.Terahertz detector absorbed layer generally has following requirement: (1) THz wave
Section absorptivity is high (being better than 85%)；(2) low heat capacity, it is highly thermally conductive；(3) higher hardness film characteristics, to guarantee coating absorptivity
Stability；(4) good process repeatability and technology stability.Through experiments, it was found that the generally existing spectral absorption of Terahertz absorbing material
Property and the desired paradox of thermal characteristic, current selectable absorbing material is mainly graininess high-purity silicon carbide and 3M pitch-dark
Deng although certain organic material absorptivities are higher, poor thermal conductivity should not be used.Graininess high-purity silicon carbide is again with bulky grain
The absorptivity of shape is high, and coating entire in this way is thicker, is not only not easy the hot-fluid that the terahertz emission of absorption generates being transmitted to hot spy
It surveys on device, and is easy to generate more heat loss by radiation, conduction, convection current.Absorbing material does not require nothing more than high suction
Yield also requires have low thermal losses, and furthermore the adhesive of large grained high-purity silicon carbide is also to influence Terahertz absorption and heat
An important factor for conduction.Therefore the Terahertz that material cannot be pursued merely absorbs, it is also contemplated that heat loss after Terahertz absorption
Size.
Flat response can not be realized in broadband in view of single face absorber coatings, and because interference effect, reflectivity are with temperature
Degree variation and heat loss influence, and single face actual absorption rate stability is poor.According to the design feature of lumen type wide range radiation detector,
It can realize that the wide spectrum of Terahertz absorbs by multiple absorb of detector cavity；Therefore single face absorbed layer reflectivity and
Heat loss is controlled in (5-15) %, while absorbed layer will have the spy that absorbed layer thermal capacitance is low, thermal conductivity is high, performance is stable
Point.In conclusion the key of production lumen type wide range radiation detector is to prepare Terahertz absorptivity 85% or more but heat transfer
Property good and coating is thin, heat loss is low absorbing material.
Summary of the invention
The technical problem to be solved by the present invention is providing a kind of preparation method of wide range radiation detector absorbed layer, it is used for
The production of terahertz emission detector absorbed layer can effectively improve the Terahertz absorptivity of detector, have wide range radiation absorption
The characteristics of (from millimeter wave to THz wave and infrared band), highly thermally conductive, highly sensitive fast-response.
Technical scheme is as follows:
A kind of wide range radiation detector absorbed layer is followed successively by the main absorbed layer of Terahertz, electric heating layer, electricity from top layer to bottom
Insulating layer, Terahertz reflecting layer.
The main absorbed layer of Terahertz is sprayed using 2-3 kind conductive polymer material, to realize the reliable and stable of absorptivity and inhale
The wide spectral range of receipts；Using high temperature resistant, hardness is high, the coating jointing material of shallow layer can be achieved, and is formed containing the equal of binder
Even mixed coating.The main absorbed layer of Terahertz realizes that the electrical loss of Terahertz and dielectric loss absorb.
Electric heating layer is high using electric heating coating resistance value stability, thickness is thin, hardness is high, thermally conductive, and can have to Terahertz
The material centainly absorbed is used for realization.
Electric insulation layer is used to that the base material of electric heating layer and detector hot end face to be isolated, it is desirable that be electrically insulated, thickness is thin,
Hardness is high, thermally conductive good, and can have certain absorption to Terahertz.
Terahertz reflecting layer is sprayed at the another side of electric insulation layer, reflected terahertz hereby wave is used for, to improve the suction of absorbed layer
Yield.
For the response speed for improving detector, reducing environmental temperature fluctuation influences, and reduces absorbed layer heat loss, wide range radiation
Detector absorber thickness controls between 0.2mm~0.5mm.
Wide range radiation detector absorbed layer the preparation method is as follows:
Step 1: taking base material as the 3rd layer of electric insulation layer
Step 2: select resistance stability, hardness is higher, thermal conductivity is strong, THz wave reflectivity is low resistance slurry as
Electric heating layer material, is uniformly mixed material using adhesive, and the 2nd is formed in electric insulation layer one side by spraying method
Layer, then makes the 2nd layer to be solidificated on the 3rd layer by way of drying or drying；
Step 3: Terahertz absorptivity height to be selected, high temperature resistant, hardness are high, 2~3 kinds of high scores of film sample coating can be achieved
High molecular material is uniformly mixed using adhesive, uses the mixture containing adhesive as the main absorbed layer of Terahertz by sub- material
Material forms the 1st layer by spraying method on electric heating layer；
Step 4: the material of Terahertz reflectivity height, high temperature resistant, achievable film sample coating is selected, using adhesive by material
Material uniformly mixing, forms Terahertz reflector material.It is formed on base material (electric insulation layer) another side by spraying method
4th layer.Then made by way of drying or drying on the 4th layer of another side for being solidificated in the 3rd layer, completes preparation.
Electric insulation layer material described in above step can be the solid body of any shape of electrical isolation；Adhesive spray
Painting refers to spray gun spraying, spreading, brushing or sputtering；The sunning is to spontaneously dry, and is dried as electrical drying, electric heating
Drying temperature is 50 DEG C~150 DEG C.
The invention has the advantages that:
(1) this method preparation process is simple, can be painted on target object surface, is not necessarily to particular job environment
To control thicknesses of layers very well, and guarantee the uniformity and strong adhesive ability of film, there is very high output at low cost
Rate；
(2) formed absorbed layer have higher hardness film characteristics, receive layer general thickness be no more than 0.5mm, absorbed layer compared with
Thin and high with thermal conductivity characteristic, effectively increases the response speed of detector, and reducing environmental temperature fluctuation influences, and reduces
The stability of coating absorptivity is effectively ensured in absorbed layer heat loss；
(3) more reasonable based on absorption of the radiation detector of the absorbed layer to THz wave.Monolithic absorptivity is excessively high, radiation
It is absorbed concentrating on some temperature sensor, is unfavorable for the spatially uniform that detector realizes response.Absorbed layer Terahertz
Total absorptivity depend on absorptive rate of radiation and thermal absorptivity, when monolithic absorptivity control 85%~95%, pass through totally-enclosed chamber
Structure, which is realized repeatedly to absorb, is greatly reduced absorber thickness and thermal resistance, reduces heat loss, therefore have higher total absorptivity, together
When greatly improve detector response spatially uniform.
Detailed description of the invention
Fig. 1 wide range radiation detector absorbent layer structure schematic diagram.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.
A kind of wide range radiation detector absorbed layer is followed successively by Terahertz master from top layer to bottom as shown in Figure of description 1
Absorbed layer, electric heating layer, electric insulation layer, Terahertz reflecting layer.The main absorbed layer of Terahertz is sprayed using 2-3 kind conductive polymer material
It applies, with the wide spectral range realizing the reliable and stable of absorptivity and absorbing；Using high temperature resistant, hardness is high, shallow layer can be achieved
Coating jointing material forms the uniform mixed coating containing binder.Electric heating layer is high using electric heating coating resistance value stability, thick
It spends that thin, hardness is high, thermally conductive, and can have the material centainly absorbed to Terahertz；Electric insulation layer is for being isolated electric heating layer and detection
The base material in device hot end face；Terahertz reflecting layer is sprayed at the another side of electric insulation layer.Wide range radiation detector absorbs thickness
Degree control is between 0.2mm~0.5mm.
Embodiment
Wide range radiation detector absorbed layer the preparation method is as follows:
Step 1: selecting 0.3mm thickness, the 3rd layer of electric insulation layer is made as base material in the potsherd of 50mm × 50mm；
Step 2: selecting RD65724 resistance slurry, accounting 5%~30% selects 3M pitch-dark simultaneously as electric heating layer material
Curing agent or thermal conducting agent auxiliary material are added, accounting 70%~95% uniformly mixes, a certain in electric insulation layer by spraying method
The 2nd layer is formed on face, then makes the 2nd layer to be solidificated on the 3rd layer by way of drying or drying；
Step 3: the combination of modified multi-wall carbon nano-tube powder and four brown iron oxide of nanometer is selected, is each accounted for than 2.5%~15%,
Adhesive selects 3M pitch-dark and add curing agent or thermal conducting agent auxiliary material, accounting 70%~95%, using adhesive by high score
Sub- material uniformly mixes, and uses the mixture containing adhesive as the material of the main absorbed layer of Terahertz, is added by spraying method in electricity
The 1st layer is formed on thermosphere, then makes the 1st layer to be solidificated on the 2nd layer by way of drying or drying；
Step 4: selecting silver paste, accounting 5%~30% is used as film sample coating material, and adhesive is selected 3M pitch-dark and added
Curing agent or thermal conducting agent auxiliary material, accounting 70%~95% are uniformly mixed material using adhesive, form Terahertz reflection
Layer material forms the 4th layer by spraying method on electric insulation layer another side, the 4th is then made by way of drying or drying
Layer is solidificated on the 3rd layer of another side, completes preparation.
Embodiment described above is only that embodiments of the present invention are described, not to design of the invention and
Range is defined.Without departing from the design concept of the invention, ordinary people in the field is to technical solution of the present invention
The all variations and modifications made, should all drop into protection scope of the present invention, the scope of the present invention by appended claims and
It is not that above description limits, it is intended that all changes that come within the meaning and range of equivalency of the claims are included
In the present invention, any reference signs in the claims should not be construed as limiting the involved claims.
Claims (5)
1. a kind of preparation method of wide range radiation detector absorbed layer, wide range radiation detector absorbed layer from top layer to bottom successively
For the main absorbed layer of Terahertz, electric heating layer, electric insulation layer, Terahertz reflecting layer, it is characterised in that: the wide range radiation detector
Absorber thickness control between 0.2mm~0.5mm, the wide range radiation detector absorbed layer the preparation method is as follows:
Step 1: taking base material as the 3rd layer of electric insulation layer；
Step 2: selecting resistance stability, the resistance slurry that hardness is higher, thermal conductivity is strong, THz wave reflectivity is low adds as electricity
Thermosphere material, is uniformly mixed material using adhesive, and the 2nd layer is formed in electric insulation layer one side by spraying method, with
The 2nd layer is set to be solidificated on the 3rd layer by way of drying or drying afterwards；
Step 3: Terahertz absorptivity height to be selected, high temperature resistant, hardness are high, 2~3 kinds of macromolecule materials of film sample coating can be achieved
Material, is uniformly mixed high molecular material using adhesive, uses the mixture containing adhesive as the material of the main absorbed layer of Terahertz,
The 1st layer is formed on electric heating layer by spraying method, then makes the 1st layer to be solidificated in the 2nd layer by way of drying or drying
On；
Step 4: Terahertz reflectivity height, high temperature resistant, the material that film sample coating can be achieved are selected, it is using adhesive that material is equal
Even mixing forms Terahertz reflector material, forms the 4th layer on electric insulation layer another side by spraying method, then pass through
The mode of sunning or drying makes on the 4th layer of another side for being solidificated in the 3rd layer, completes preparation；
Electric insulation layer material described in above step can be the solid body of any shape of electrical isolation；Adhesive sprays
Refer to and uses spray gun spraying, spreading, brushing or sputtering；The sunning is to spontaneously dry, and is dried as electrical drying, electrical drying
Temperature is 50 DEG C~150 DEG C.
2. a kind of preparation method of wide range radiation detector absorbed layer according to claim 1, it is characterised in that: the electricity
Insulating layer selects the potsherd of 0.3mm thickness, 50mm × 50mm to be made as base material.
3. a kind of preparation method of wide range radiation detector absorbed layer according to claim 1, it is characterised in that: the electricity
Heating layer selects RD65724 resistance slurry, and accounting 5%~30% selects 3M pitch-dark and adds curing agent or thermal conducting agent auxiliary material
Material, accounting 70%~95% uniformly mix.
4. a kind of preparation method of wide range radiation detector absorbed layer according to claim 1, it is characterised in that: it is described too
The main absorbed layer of hertz selects the combination of modified multi-wall carbon nano-tube powder and four brown iron oxide of nanometer, each accounts for gluing than 2.5%~15%
Mixture selects 3M pitch-dark and add curing agent or thermal conducting agent auxiliary material, accounting 70%~95%, using adhesive by macromolecule
Material uniformly mixes.
5. a kind of preparation method of wide range radiation detector absorbed layer according to claim 1, it is characterised in that: it is described too
Silver paste is selected in hertz reflecting layer, and accounting 5%~30% is used as film sample coating material, and adhesive selects 3M pitch-dark and adds solidification
Agent or thermal conducting agent auxiliary material, accounting 70%~95% are uniformly mixed material using adhesive.
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| CN201710872180.6A CN109560164B (en) | 2017-09-25 | 2017-09-25 | Preparation method of absorption layer of wide-spectrum radiation detector |
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| CN201710872180.6A CN109560164B (en) | 2017-09-25 | 2017-09-25 | Preparation method of absorption layer of wide-spectrum radiation detector |
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| CN112420852A (en) * | 2020-11-28 | 2021-02-26 | 郑州大学 | Two-dimensional material photodetector and preparation method thereof |
| CN113333257A (en) * | 2021-06-09 | 2021-09-03 | 中国电子科技集团公司第四十一研究所 | Preparation method of terahertz blackbody radiation surface |
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