Preparation method of absorption layer of wide-spectrum radiation detector
Technical Field
The invention belongs to the technical field of terahertz detection, and relates to a material with high thermal conductivity and high absorptivity from a millimeter wave band to a terahertz wave band and infrared and visible light bands, in particular to a preparation method of an absorption layer of a wide-spectrum radiation detector.
Background
Terahertz radiation is a general term for electromagnetic radiation of a specific wavelength band, has a frequency range of 0.1THz to 10THz, is a special wavelength band between optical far infrared and microwave, is between the two research fields of electronics and optics, and has the characteristics of both optics and microwave. In recent years, due to the development of ultrafast photoelectron technology and low-scale semiconductor technology, a proper light source and detection means are provided for terahertz waveband, and terahertz science and technology are developed rapidly, so that people realize that terahertz has very important academic and application values in various fields such as physics, chemistry, biology, medicine, materials, astronomy and the like, and terahertz science and technology become one of the most advanced and hot research fields in the world at present.
Although people have recognized the important scientific significance of the terahertz waveband, the waveband is still an electromagnetic frequency window to be fully developed and researched, at present, a plurality of factors restricting the development and the application of the terahertz waveband still exist, and the lack of the terahertz signal detection technology is one of the restricting factors. This includes problems with detection sensitivity, bandwidth, response time, and detector accuracy. Therefore, development of a detector with high response speed, high sensitivity, sufficient resolution and strong stability can greatly promote the development of the terahertz technology.
The key to manufacturing terahertz radiation detectors is to find materials with good absorption rate in the terahertz waveband and develop measuring equipment with low measurement uncertainty. The absorption layer of the terahertz detector generally has the following requirements: (1) the absorption rate of the terahertz wave band is high (better than 85%); (2) low heat capacity, high thermal conductivity; (3) the film has the characteristics of higher hardness so as to ensure the stability of the absorptivity of the coating; (4) good process repeatability and process stability. Experiments show that the terahertz absorption material generally has the contradiction between the spectral absorption property and the thermal property requirement, the currently selected absorption materials are mainly granular high-purity silicon carbide, 3M black paint and the like, and certain organic materials have high absorption rate but poor thermal conductivity and are not suitable for use. The granular high-purity silicon carbide is high in large granular absorptivity, so that the whole coating is thick, heat flow generated by absorbed terahertz radiation is not easily conducted to a heat detector, and more heat loss is easily generated through radiation, conduction and convection. The absorption material is required to have high absorptivity and low heat loss, and in addition, the adhesive of large-particle high-purity silicon carbide is also an important factor influencing terahertz absorption and heat conduction. Therefore, the terahertz absorption of the material cannot be pursued simply, and the magnitude of the heat loss after the terahertz absorption is also considered.
In view of the fact that the single-surface absorption coating cannot realize flat response in a wide waveband, and the single-surface actual absorption rate stability is poor due to interference influence, the change of reflectivity along with temperature and heat loss influence. According to the structural characteristics of the cavity type wide-spectrum radiation detector, the terahertz wide-spectrum absorption can be realized through multiple absorption of the cavity of the detector; therefore, the reflectivity and heat loss of the single-surface absorption layer can be controlled to be (5-15)%, and the absorption layer has the characteristics of low heat capacity, high thermal conductivity and stable performance. In summary, the key to manufacturing the cavity-type wide-spectrum radiation detector is to prepare an absorption material with a terahertz absorption rate of more than 85%, good thermal conductivity, a thin coating and low heat loss.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the preparation method of the absorption layer of the wide-spectrum radiation detector is used for manufacturing the absorption layer of the terahertz radiation detector, can effectively improve the terahertz absorption rate of the detector, and has the characteristics of wide-spectrum radiation absorption (from millimeter waves to terahertz waves and infrared bands), high thermal conductivity, high sensitivity and quick response.
The technical scheme of the invention is as follows:
an absorption layer of a wide-spectrum radiation detector comprises a terahertz main absorption layer, an electric heating layer, an electric insulation layer and a terahertz reflection layer in sequence from a top layer to a bottom layer.
The terahertz main absorption layer is sprayed by 2-3 conductive polymer materials so as to realize the stability and reliability of the absorption rate and the wide spectrum range of the absorption; the coating adhesive material which is high temperature resistant and high in hardness and can realize a thin coating is adopted to form a uniform mixed coating containing the binder. The terahertz main absorption layer realizes the absorption of the electrical loss and the dielectric loss of terahertz.
The electric heating layer is made of a material which has high resistance stability, thin thickness, high hardness, heat conduction and certain absorption to terahertz and is used for magnitude reproduction.
The electric insulation layer is used for isolating the electric heating layer from a substrate material of a hot end face of the detector, and is required to be good in electric insulation, thin in thickness, high in hardness, good in heat conduction and capable of absorbing terahertz to a certain extent.
The terahertz reflecting layer is sprayed on the other surface of the electric insulating layer and is used for reflecting terahertz waves so as to improve the absorption rate of the absorbing layer.
In order to improve the response speed of the detector, reduce the influence of environmental temperature fluctuation and reduce the heat loss of the absorption layer, the thickness of the absorption layer of the broad-spectrum radiation detector is controlled between 0.2mm and 0.5 mm.
The preparation method of the absorption layer of the broad spectrum radiation detector comprises the following steps:
step 1: taking a substrate material as a 3 rd layer electric insulating layer
Step 2: selecting resistance paste with high resistance stability, high hardness, strong thermal conductivity and low terahertz wave reflectivity as an electric heating layer material, uniformly mixing the materials by adopting an adhesive, forming a 2 nd layer on one surface of an electric insulating layer in a spraying mode, and then solidifying the 2 nd layer on the 3 rd layer in a drying or baking mode;
and step 3: 2-3 high polymer materials which are high in terahertz absorption rate, high in high temperature resistance and high in hardness and can realize a film-like coating are selected to be used, the high polymer materials are uniformly mixed by adopting an adhesive, the mixture containing the adhesive is used as a material of a terahertz main absorption layer, and a layer 1 is formed on an electric heating layer in a spraying mode;
and 4, step 4: the material with high terahertz reflectivity and high temperature resistance and capable of realizing the film-like coating is selected, and the material is uniformly mixed by adopting an adhesive to form a terahertz reflecting layer material. And forming a 4 th layer on the other surface of the base material (the electric insulation layer) by spraying. And then the 4 th layer is solidified on the other side of the 3 rd layer by airing or drying, thereby completing the preparation.
The material of the electric insulating layer in the above step may be any shape of solid object that is electrically insulating; adhesive spraying refers to spraying, spreading, brushing or sputtering with a spray gun; the airing is natural drying, the drying is electric heating drying, and the electric heating drying temperature is 50-150 ℃.
The invention has the advantages that:
(1) the method has simple preparation process, can be directly sprayed on the surface of a target object, can well control the thickness of the film layer without special working environment, ensures the uniformity and strong adhesive capacity of the film, and has high yield at low cost;
(2) the formed absorption layer has the characteristic of a high-hardness film, the total thickness of the absorption layer is not more than 0.5mm, the absorption layer is thin and has the characteristic of high heat conductivity, the response speed of the detector is effectively improved, the influence of environmental temperature fluctuation is reduced, the heat loss of the absorption layer is reduced, and the stability of the absorption rate of the coating is effectively ensured;
(3) the radiation detector based on the absorption layer can absorb terahertz waves more reasonably. The single-chip absorption rate is too high, and radiation is intensively absorbed on a certain temperature sensor, so that the spatial uniformity of response of the detector is not facilitated. The terahertz total absorption rate of the absorption layer depends on the radiation absorption rate and the heat absorption rate, when the single-chip absorption rate is controlled to be 85% -95%, the thickness and the heat resistance of the absorption layer are greatly reduced through multiple times of absorption by the totally-closed cavity structure, the heat loss is reduced, the total absorption rate is higher, and the space uniformity of the response of the detector is greatly improved.
Drawings
FIG. 1 is a schematic diagram of an absorber layer structure of a broad spectrum radiation detector.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
An absorption layer of a wide-spectrum radiation detector is shown in figure 1 of the specification, and comprises a terahertz main absorption layer, an electric heating layer, an electric insulation layer and a terahertz reflection layer in sequence from a top layer to a bottom layer. The terahertz main absorption layer is sprayed by 2-3 conductive polymer materials so as to realize the stability and reliability of the absorption rate and the wide spectrum range of the absorption; the coating adhesive material which is high temperature resistant and high in hardness and can realize a thin coating is adopted to form a uniform mixed coating containing the binder. The electric heating layer is made of a material which has high resistance stability, thin thickness, high hardness, heat conduction and certain absorption to terahertz; the electric insulating layer is used for isolating the electric heating layer from the substrate material of the hot end face of the detector; the terahertz reflecting layer is sprayed on the other surface of the electric insulating layer. The thickness of the absorption layer of the broad spectrum radiation detector is controlled between 0.2mm and 0.5 mm.
Examples
The preparation method of the absorption layer of the broad spectrum radiation detector comprises the following steps:
step 1: a ceramic plate with the thickness of 0.3mm and the thickness of 50mm multiplied by 50mm is selected as a substrate material to prepare a 3 rd layer of electric insulation layer;
step 2: selecting RD65724 resistance paste with the proportion of 5-30 percent as an electric heating layer material, selecting 3M black paint, adding curing agent or heat conducting agent auxiliary material with the proportion of 70-95 percent, uniformly mixing, forming a 2 nd layer on one surface of the electric insulating layer in a spraying mode, and then curing the 2 nd layer on the 3 RD layer in a drying or baking mode;
and step 3: selecting a combination of modified multi-walled carbon nano powder and nano iron tetroxide powder, wherein the ratio of each of the modified multi-walled carbon nano powder to the nano iron tetroxide powder is 2.5-15%, selecting 3M black paint as an adhesive, adding a curing agent or a heat conducting agent auxiliary material, the ratio of the adhesive to the nano iron tetroxide powder is 70-95%, uniformly mixing high polymer materials by adopting the adhesive, using a mixture containing the adhesive as a material of a terahertz main absorption layer, forming a 1 st layer on an electric heating layer by a spraying mode, and then curing the 1 st layer on the 2 nd layer by a drying or baking mode;
and 4, step 4: selecting silver paste with the proportion of 5% -30% as a film-like coating material, selecting 3M black paint as an adhesive, adding a curing agent or a heat conducting agent auxiliary material with the proportion of 70% -95%, uniformly mixing the materials by using the adhesive to form a terahertz reflecting layer material, forming a 4 th layer on the other surface of the electric insulating layer in a spraying mode, and then curing the 4 th layer on the other surface of the 3 rd layer in a drying or baking mode to finish the preparation.
The above-described embodiments are merely illustrative of the embodiments of the present invention, and do not limit the spirit and scope of the present invention. Various modifications and improvements of the technical solution of the present invention, which may be made by a person skilled in the art without departing from the design concept of the present invention, are intended to fall within the scope of the present invention, which is defined by the appended claims rather than the above description, and all changes which fall within the meaning and range of equivalency of the claims are therefore intended to be embraced therein and any reference signs in the claims are not to be construed as limiting the claims concerned.