CN107765452B - Electric tuning vanadium dioxide phase change mid-infrared modulator and mid-infrared wireless communication system - Google Patents
Electric tuning vanadium dioxide phase change mid-infrared modulator and mid-infrared wireless communication system Download PDFInfo
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- CN107765452B CN107765452B CN201710890276.5A CN201710890276A CN107765452B CN 107765452 B CN107765452 B CN 107765452B CN 201710890276 A CN201710890276 A CN 201710890276A CN 107765452 B CN107765452 B CN 107765452B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0327—Operation of the cell; Circuit arrangements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
Abstract
The invention belongs to the technical field of photoelectrons, and discloses an electrically tuned vanadium dioxide phase change intermediate infrared modulator and an intermediate infrared wireless communication system, which are of a multilayer film structure and take vanadium dioxide as an electric control phase change material; in the multilayer film structure, the lowest layer is a copper layer, the uppermost layer is a gold finger electrode and a receiving antenna, the vanadium dioxide layer is arranged in the middle of the medium infrared modulator, and a silicon dioxide layer is arranged between the vanadium dioxide layer and the copper layer. The invention realizes the modulation of infrared light reflectivity in 25.5THz under the excitation voltage of 2.4 volts, and the modulation depth is 30 percent; meanwhile, the modulation of the resonance frequency is realized, and the modulation range is 3.5%. The medium infrared modulator is of a layered structure, is based on a vanadium oxide material with mature process, is simple to manufacture and low in cost, realizes the modulation of medium infrared light under lower working voltage, and has important significance for promoting the practicability of the medium infrared modulator.
Description
Technical Field
The invention belongs to the technical field of photoelectrons, and particularly relates to an electrically-tuned vanadium dioxide phase change intermediate infrared modulator and an intermediate infrared wireless communication system.
Background
The mid-infrared (wavelength 3-30 microns) is an important spectrum resource in electromagnetic spectrum, and the wave band with the wavelength 3-30 microns has unique characteristics of strong molecular characteristic absorption, heat body radiation, an atmosphere transparent window and the like, so that the mid-infrared technology has wide application prospects in the fields of wireless broadband communication, high-sensitivity substance detection, atmosphere pollution monitoring, molecular spectrum research, nondestructive medical diagnosis, target detection, satellite remote sensing and the like. The modulator is a key device in a mid-infrared technology system, and particularly has important application value in the fields of mid-infrared wireless communication, high-sensitivity molecule detection and the like.
Due to the lack of suitable photoelectric materials, the development of efficient and compact mid-infrared modulators has been a bottleneck problem in the mid-infrared technology field. One implementation scheme in the prior art is an acousto-optic modulator based on a Ge acousto-optic material, and the device is large in size, the modulation rate is limited by MHz magnitude, and the requirements of practical application cannot be met. In addition, graphene-based mid-infrared modulators are also currently reported. Although the currently reported graphene modulator has a modulation depth of up to 95% and a modulation rate of 20GHz, the operating voltage of the graphene modulator is up to more than 20V, and meanwhile, since the graphene material belongs to a new material appearing in the last decade, the preparation process is expensive, the repeatability is poor, and the stability and the high cost of the device performance limit the application development of the graphene modulator.
In summary, the problems of the prior art are as follows: because of the lack of mature photoelectric materials in the mid-infrared band, the current mid-infrared modulators generally have the problems of high working voltage, large volume, complex preparation technology, high cost and poor stability, and restrict the practical application of the mid-infrared modulation technology.
Disclosure of Invention
Aiming at the problems in the prior art, the invention creatively takes a vanadium dioxide phase change material as a mid-infrared modulation material, and invents a mid-infrared modulator based on the vanadium oxide phase change material. Vanadium oxide is a mature material with simple process, low cost and over 60 years history, and its conventional application is infrared detector. The invention creatively uses the vanadium oxide for modulating the mid-infrared wave, and realizes the mid-infrared modulator with low cost, small volume and high efficiency.
The invention is realized in such a way that the infrared modulator in the phase change of the electrically tuned vanadium dioxide is of a multilayer film structure, and the vanadium dioxide is used as an electric control phase change material;
in the multilayer film structure, the lowest layer is a copper layer, the uppermost layer is a gold finger electrode, the vanadium dioxide layer is arranged in the middle of the medium infrared modulator, and the silicon dioxide layer is arranged between the vanadium dioxide layer and the copper layer. The gold finger electrode on the uppermost layer serves as an electrode and also serves as an antenna for receiving mid-infrared light, and the voltage loading mode and the function of collecting infrared light by the antenna are ingeniously combined in the same structure.
Further, the copper layer has a thickness of 300 nm; the thickness of the silicon dioxide layer is 100 nm; the thickness of the vanadium dioxide layer is 250 nm; the thickness of the gold interdigital electrode is 150 nm.
Furthermore, the metal strip width of the metal strip array of the gold interdigital electrode is 2.5 μm, the length of the metal strip is 3.8mm, the distance between adjacent metal strips is 4.5 μm, and the size of the whole array is 4.0mm multiplied by 4.0 mm.
Another object of the present invention is to provide a mid-infrared modulator plasma antenna using the mid-infrared modulator for electrically tuning vanadium dioxide phase transition, wherein the mid-infrared modulator plasma antenna is a metal strip array of gold interdigital electrodes.
The invention also aims to provide a mid-infrared wireless communication system using the mid-infrared modulator for electrically tuning the phase change of vanadium dioxide.
Another object of the present invention is to provide a highly sensitive molecular detection system using the mid-infrared modulator for electrically tuning the phase transition of vanadium dioxide.
According to the invention, through structural design and parameter optimization of the device, the modulation effect that the frequency modulation range is 3.5% in the middle infrared band, the modulation depth is 30% and the working voltage is lower than 3V is realized. Compared with the prior art, the invention has the advantages that the working voltage is lower by more than 10 times, and simultaneously, the invention has the advantages of simple preparation technology, low cost, small volume and stable performance due to the adoption of the vanadium oxide film material with mature process, and can promote the practical development of the medium infrared modulator.
Drawings
FIG. 1 is a schematic structural diagram of an infrared modulator in phase transition of electrically tuned vanadium dioxide according to an embodiment of the present invention;
in the figure: 1. a copper layer; 2. a silicon dioxide layer; 3. a vanadium dioxide layer; 4. gold interdigital electrode.
Fig. 2 is a schematic structural diagram of an implementation of a gold finger antenna according to an embodiment of the present invention.
Fig. 3 is an amplitude modulation characteristic diagram of the mid-infrared modulator during the voltage rising process according to the embodiment of the present invention.
Fig. 4 is an amplitude modulation characteristic diagram of the mid-infrared modulator during voltage drop according to the embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In such a modulator integrated with an optical antenna, the optical antenna can control the amplitude, phase or polarization of mid-infrared waves based on the principle of plasmon resonance; in order to realize the controllability of control, vanadium dioxide with phase change characteristics is introduced into the modulator as a functional material, and the modulation characteristics are realized. Vanadium dioxide is a transition metal oxide with phase transition characteristics, reversible insulation-metal transition can occur at about 68 ℃, the resistivity of the vanadium dioxide changes by about 4 orders of magnitude, and the phase transition is induced mainly by heat, electricity and light.
The following detailed description of the principles of the invention is provided in connection with the accompanying drawings.
As shown in fig. 1, an infrared modulator for electrically tuning vanadium dioxide phase transition provided in an embodiment of the present invention includes: copper layer 1, silicon dioxide layer 2, vanadium dioxide layer 3, gold interdigital electrode 4.
The multilayer structure of the medium infrared modulator sequentially comprises a copper layer 1, a silicon dioxide layer 2, a vanadium dioxide layer 3 and a gold interdigital electrode 4 from bottom to top.
The thickness of each layer structure of the medium infrared modulator is 150nm of copper, 100nm of silicon dioxide, 250nm of vanadium dioxide and 150nm of gold interdigital electrodes from bottom to top in sequence.
The specific structure of the top interdigital metal strip array of the medium infrared modulator is shown in fig. 4: the width of the metal strips is 2.5 mu m, the length of the metal strips is 3.8mm, the distance between adjacent metal strips is 4.5 mu m, and the size of the whole array is 4.0mm multiplied by 4.0 mm.
The medium infrared modulator provided by the embodiment of the invention is of a multilayer film structure, and vanadium dioxide is used as an electric control phase change material.
An embodiment of a gold finger antenna according to an embodiment of the present invention is shown in fig. 2.
The street deterioration test will be described in detail below with respect to the effect of the present invention.
The performance of the mid-infrared modulator in the embodiment of the present invention is tested, fig. 3 and 4 show the amplitude modulation characteristics of the mid-infrared modulator during the voltage rising and falling processes, respectively, and the modulation characteristics in the reflection mode are measured by a fourier transform infrared spectrometer. The invention relates to an infrared modulator in phase change of electrically tuned vanadium dioxide, which is based on the plasma resonance principle of an optical antenna. When no voltage is applied, the vanadium dioxide is in an insulating state, the resonance of the antenna is strongest, and the modulator has high absorption characteristic at a position of 25.5 THz; when a voltage is applied to the gold finger electrode, the vanadium dioxide is transformed to a metal state with the increase of the voltage, and the dielectric function and the conductivity of the vanadium dioxide are changed, so that the resonance of the antenna is weakened, and the absorption of the modulator is reduced. When the voltage is raised to 2.4 volts, the vanadium dioxide is fully converted to the metallic state, at which point the resonance of the antenna is at a minimum, rendering the modulator highly reflective at 25.5 THz. When the voltage is reduced, the vanadium dioxide is converted from a metal state to an insulation state, and the resonance of the antenna is gradually strengthened; when the voltage drops to 0 volts, the resonance of the antenna returns to its maximum, at which point the modulator exhibits an initial high absorption characteristic at 25.5 THz. In the whole test process, the reflection signal of the black body light source covering the frequency of 20-30THz passing through the gold-plated mirror surface is taken as a background signal, the reflection signal passing through the modulator sample is taken as an actual signal, and the actual signal is divided by the background signal to obtain the reflectivity characteristic. The modulation of infrared light reflectivity in 25.5THz is realized before and after the phase change of vanadium dioxide from an insulating state to a metal state through voltage control, and the modulation depth is 30%; meanwhile, the modulation of the resonance frequency is realized, and the modulation range is 3.5%. Meanwhile, the mid-infrared modulator is of a layered structure, is simple to manufacture and low in cost, realizes the modulation of mid-infrared light under a lower working voltage, and has important significance for promoting the practicability of the mid-infrared modulator.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (4)
1. The infrared modulator in phase change of the electrically tuned vanadium dioxide is characterized in that the infrared modulator in phase change of the electrically tuned vanadium dioxide is of a multilayer film structure, and the vanadium dioxide is used as an electric control phase change material;
the bottom layer of the multilayer film structure is a copper layer, the top layer of the multilayer film structure is a gold finger electrode and a receiving antenna, a vanadium dioxide layer is arranged in the middle of the medium infrared modulator, and a silicon dioxide layer is arranged between the vanadium dioxide layer and the copper layer;
the thickness of the copper layer is 300 nm; the thickness of the silicon dioxide layer is 100 nm; the thickness of the vanadium dioxide layer is 250 nm; the thickness of the gold interdigital electrode is 150 nm;
the metal strip width of the metal strip array of the gold interdigital electrode is 2.5 mu m, the length of the metal strip is 3.8mm, the distance between adjacent metal strips is 4.5 mu m, and the size of the whole array is 4.0mm multiplied by 4.0 mm.
2. A mid-infrared modulator plasma antenna using the mid-infrared modulator for electrically tuning the phase change of vanadium dioxide of claim 1, wherein the mid-infrared modulator plasma antenna is an array of metal strips of gold interdigitated electrodes.
3. A mid-infrared wireless communication system using the mid-infrared modulator for electrically tuning the phase change of vanadium dioxide of claim 1.
4. A highly sensitive molecular detection system using the mid-infrared modulator for electrically tuning the phase transition of vanadium dioxide as claimed in claim 1.
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| CN107765452B true CN107765452B (en) | 2020-01-21 |
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Citations (4)
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|---|---|---|---|---|
| CN203277643U (en) * | 2013-04-10 | 2013-11-06 | 西安理工大学 | Array type photo-conductive antenna structure |
| WO2014171992A3 (en) * | 2013-01-30 | 2015-01-15 | The Trustees Of Columbia University In The City Of New York | System, method and computer-accessible medium for depth of field imaging for three-dimensional sensing |
| CN105137619A (en) * | 2015-10-09 | 2015-12-09 | 电子科技大学 | Mid-infrared modulator of broadband |
| CN205430649U (en) * | 2015-04-24 | 2016-08-03 | 深圳烯旺新材料科技股份有限公司 | Transparent electric heat membrane of low -voltage, high temperature electric heat piece |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014171992A3 (en) * | 2013-01-30 | 2015-01-15 | The Trustees Of Columbia University In The City Of New York | System, method and computer-accessible medium for depth of field imaging for three-dimensional sensing |
| CN203277643U (en) * | 2013-04-10 | 2013-11-06 | 西安理工大学 | Array type photo-conductive antenna structure |
| CN205430649U (en) * | 2015-04-24 | 2016-08-03 | 深圳烯旺新材料科技股份有限公司 | Transparent electric heat membrane of low -voltage, high temperature electric heat piece |
| CN105137619A (en) * | 2015-10-09 | 2015-12-09 | 电子科技大学 | Mid-infrared modulator of broadband |
Non-Patent Citations (1)
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| Tunable mid-infrared patch antennas based on VO2 phase transition;Zhe Li etc.;《Journal of Modern Optics》;20170410;正文第2、4部分，图1 * |
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