CN109560051A - The manufacturing method of heat-radiating substrate, device and heat-radiating substrate - Google Patents
The manufacturing method of heat-radiating substrate, device and heat-radiating substrate Download PDFInfo
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- CN109560051A CN109560051A CN201811414148.4A CN201811414148A CN109560051A CN 109560051 A CN109560051 A CN 109560051A CN 201811414148 A CN201811414148 A CN 201811414148A CN 109560051 A CN109560051 A CN 109560051A
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- heat
- radiating substrate
- inorganic layer
- substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
Abstract
The present invention provides the manufacturing method of a kind of heat-radiating substrate, device and heat-radiating substrate, its heat-radiating substrate has the one side of substrate and lamination in the substrate using aluminum or aluminum alloy as principal component and the heat-conducting layer with insulating properties, and the heat-conducting layer has inorganic layer, which contains filler using aluminium oxide as principal component and using phosphate glass as the adhesive of principal component.Warpage of the present invention is small and insulating properties and thermal diffusivity are excellent.
Description
Related divisional application
Present patent application is entitled " heat-radiating substrate, device and the heat-radiating substrate application No. is 201610518471.0
The divisional application of the application for a patent for invention of manufacturing method ", the applying date of original application are on July 4th, 2016.
Technical field
The present invention relates to the manufacturing methods of a kind of heat-radiating substrate, device (device) and heat-radiating substrate.
Background technique
In recent years, with the high power of electronic component, the heat generated from electronic component increases.Such as high brightness shines
Diode (Light Emitting Diode, LED) locally generates high temperature, thus causes luminous efficiency to reduce, luminescent color becomes
Change, element deterioration etc..Therefore, industry seeks expeditiously to disperse the heat.Now well-known is following heat-radiating substrate, this is dissipated
Hot substrate is for the requirement, by making the substrate surface of excellent thermal conductivity contain adhesive (binder) and filler
(filler), the envelope with insulating properties and thermal conductivity is formed, the coolants such as substrate side and cold sink (fin) are connect
Touching, contacts envelope side and electronic component etc., thus improves radiating efficiency.
As the substrate, aluminium oxide (alumina) etc. ceramics (ceramic) substrate, aluminium (aluminum) can be enumerated
Equal metal bases etc..It is 25W/mK although aluminium oxide thermal conductivity is high in these, radiating efficiency is excellent, its price is high, and
And poor in processability, it is difficult to manufacture the substrate of thin form.On the other hand, metal base is lower than aluminium oxide in terms of cost.Especially
Aluminium is excellent in terms of thermal conductivity and is light weight, and excellent in workability, so being used as such substrate mostly.
In addition, as the envelope, it is desirable that the additive amount of the excellent thermal conductivity and filler of adhesive and filler is enough
It is more.In addition, having the load for causing the radiating efficiency of heat-radiating substrate to reduce because of envelope in the case where the average thickness of the envelope is big
Sorrow, it is therefore desirable to the average thickness of envelope be made to be thinned to the degree that can ensure insulating properties.
As described adhesive, the widely known resin for having epoxy (epoxy), polyimides (polyimide) etc..It is such
The thermal conductivity of resin is usually 0.1W/mK or so.In addition, silica (silica), oxidation can be enumerated as the filler
Aluminium, silicon nitride, boron nitride etc..The thermal conductivity of the silica is 1W/mK or so, and the thermal conductivity of aluminium oxide is 25W/mK or so.
In addition, the thermal conductivity of silicon nitride and boron nitride is higher.Thermal conductivity of the thermal conductivity of these fillers due to being higher than adhesive, so logical
It crosses and is mixed with resin, can be improved the thermal conductivity of envelope.It is more with regard to thermal conductivity for excellent and inexpensive aspect in these
Use aluminium oxide.
It as the concrete example of such heat-radiating substrate, such as can enumerate: will include bisphenol-A (bisphenol A) type ring oxygen
Mixture lamination circuit substrate made of metal base of resin and inorganic filling material is (referring to Japanese Patent Laid-Open 6-
No. 44824 bulletins), by the laminations such as the epoxy resin containing inorganic hollow powder metallic substrates circuit base made of metal base
Plate (referring to Japanese Patent Laid-Open 2009-129801 bulletin) etc..
But there are following unfavorable conditions for such heat-radiating substrate: since it uses the Organic envelope of epoxy resin etc., institute
It is low with heat resistance, such as be not suitable for using under the hot environment more than 200 DEG C, envelope is furthermore formed by by epoxy resin etc.
It is easy by water penetration, because being used for a long time under moist environment, can be powered to the resin of envelope and occur and be carbonized, thus cause
Envelope is easy deterioration.
For the unfavorable condition, by will have the filler of thermal conductivity to mix to form the envelope with inorganic material,
The heat-radiating substrate for being suitble to use under high temperature environment or under moist environment can be obtained.However, the inorganic material of such heat-radiating substrate
Material ductility is inferior to epoxy resin etc., therefore envelope is easy to produce pin hole (pinhole) or hole.In addition, in envelope surface meeting
The bumps formed by filler are generated, the thickness uniformity of envelope is thus caused to be easily reduced.These results cause the exhausted of envelope
Edge is easily reduced.
Therefore, design goes out the heat-radiating substrate that lamination on a metal plate has the vitreous inorganics nitride layer such as enamel.As this
Kind heat-radiating substrate, such as can enumerate and be formed with the heat-radiating substrate of enamel layer (referring to Japanese Patent Laid-Open in metal wicking surface
1-110789 bulletin and Japanese Patent Laid-Open 2006-344693 bulletin) etc..
However, the existing heat-radiating substrate due to by roasting form the inorganic layers such as enamel, so because of made of metal
Shunk caused by the poor or roasting with inorganic layer of the coefficient of thermal expansion of substrate and inorganic layer etc., and produce heat-radiating substrate
Raw warpage.The warpage is particularly evident on the aluminium base of flexible relative.Thus, it becomes difficult to by coolants such as cold sinks
Or the heaters such as electronic component are touched with heat-radiating substrate, as a result there is the unfavorable condition that the thermal diffusivity of heat-radiating substrate reduces.
The unfavorable condition can be by the warpage of mitigation heat-radiating substrate to eliminate, but which kind of degree reduced about by warpage
Sufficient radiating efficiency can be obtained, index is not yet established.Accordingly, there exist following unfavorable conditions: in order to reduce heat-radiating substrate
Warpage and carry out overprocessing, thus cause the manufacturing cost of heat-radiating substrate to increase, on the other hand, the reduction of warpage do not fill
Point, as a result cause radiating efficiency and insufficient.
[existing technical literature]
[patent document]
[patent document 1] Japanese Patent Laid-Open 6-44824 bulletin
[patent document 2] Japanese Patent Laid-Open 2009-129801 bulletin
[patent document 3] Japanese Patent Laid-Open 1-110789 bulletin
[patent document 4] Japanese Patent Laid-Open 2006-344693 bulletin
Summary of the invention
[the invention project to be solved]
The present invention is completed based on the situation, its purpose is to provide a kind of warpages small, insulating properties and thermal diffusivity
Excellent heat-radiating substrate, have the heat-radiating substrate device and the heat-radiating substrate manufacturing method.
[means to solve the problem]
The invention completed in order to solve the problem is following heat-radiating substrate, which has with aluminum or aluminum alloy
The one side of substrate and lamination in the substrate as principal component and the heat-conducting layer with insulating properties, and the heat-conducting layer has
Inorganic layer, the inorganic layer contain filler using aluminium oxide as principal component and using phosphate glasses as the bonding of principal component
Agent.
In addition, the present invention is following heat-radiating substrate, which has lamination in the one side of the inorganic layer and with silicon
Coating of the oxide as principal component, and the average thickness of the inorganic layer is 30 μm or more and 200 μm hereinafter, the painting
Layer average thickness be 0.5 μm or more and 30 μm hereinafter, the median partial size of the filler in the inorganic layer be 5 μm or more and
100 μm hereinafter, the content ratio of the filler is 30 mass % or more and 78 mass % or less.
About the heat-radiating substrate, substrate is using aluminum or aluminum alloy as principal component, and inorganic layer has a certain range of thickness
Furthermore degree contains filler using aluminium oxide as principal component and using phosphate glass as the adhesive of principal component, thus makes base
The excellent thermal conductivity of material and heat-conducting layer.In addition, the median partial size (median of the filler in the inorganic layer
Particle size) and content ratio be a certain range, thus, it is possible to easily realize the thermal conductivity of heat-conducting layer and strong simultaneously
Degree.In addition, the heat resistance of such heat-conducting layer is more excellent compared with the existing heat-conducting layer containing resin.In addition, the heat-radiating substrate
Since the bumps formed by filler in inorganic layer are filled by the coating of a certain range thickness, so the heat-radiating substrate
The thickness uniformity improves.In addition, the excellent coating of insulating properties is possible to immerse the inside of the small cracking on inorganic layer surface etc..
As a result insulating properties can be improved in the case where not damaging the thermal diffusivity of the heat-radiating substrate.In addition, the inorganic layer can be held
The temperature received is 450 DEG C~480 DEG C or so lower than filler and the softening point of adhesive, but the principal component as the coating
The heat resisting temperature of Si oxide is more than 1000 DEG C.Therefore, by having the heat-radiating substrate using Si oxide as principal component
The heat resistance of coating, the heat-radiating substrate further increases.
The coating is preferably using the noncrystal as main body of Si oxide.The noncrystal of Si oxide can be by lower than work
Price for the silica of the crystalline solid of Si oxide obtains, therefore can reduce cost spent by the formation of coating.Separately
Outside, Si oxide is noncrystal due to high-fire resistance, so can be improved the heat resistance of heat-conducting layer.
Another invention completed in order to solve the problem is following heat-radiating substrate, which has with aluminium or aluminium
Substrate and lamination one side in the substrate of the alloy as principal component and the heat-conducting layer with insulating properties, and the heat-conducting layer
Have an inorganic layer for containing the adhesive using phosphate glass as principal component, the maximum gauge difference of the inorganic layer relative to
The ratio of maximum width is 0.6% or less.
About the heat-radiating substrate, substrate is using aluminum or aluminum alloy as principal component, and inorganic layer contains with phosphate glass
Adhesive of the glass as principal component, thus makes the excellent thermal conductivity of substrate and heat-conducting layer.In addition, being led with existing containing resin
Thermosphere is compared, and the heat resistance of heat-conducting layer is more excellent.In addition, as indicate amount of warpage index, using maximum gauge difference relative to
The ratio of maximum width, and the ratio is the upper limit hereinafter, connecing as a result, in the substrate side for making the heat-radiating substrate with coolant
In the case where touching, contacting the heaters such as inorganic layer side and electronic component, heat can be effectively improved and dissipated from heater to this
The mobile efficiency and heat of hot substrate are from the heat-radiating substrate to the mobile efficiency of coolant.It as a result can be by necessary minimum
The warpage of limit reduces processing, greatly improves the thermal diffusivity of the heat-radiating substrate.
Another invention completed in order to solve the problem is the device for having the heat-radiating substrate.The device is due to tool
The standby heat-radiating substrate, so thermal diffusivity is excellent.
The another invention completed in order to solve the problem is the manufacturing method of heat-radiating substrate, is that manufacture has with aluminium
Or aluminium alloy is as the one side of substrate and lamination in the substrate of principal component and the heat-radiating substrate of the heat-conducting layer with insulating properties
Method, it is characterised in that include the following steps: coating and calcination steps, contain in the coated on one side of the substrate and made with aluminium oxide
It as the inorganic layer composition of the binder particles of principal component and is roasted for the filler of principal component and using phosphate glass
It burns；And coating and drying steps, the coated on one side of the inorganic layer formed after the coating and calcination steps is with siloxanes
(siloxane) compound as principal component coating composition and be dried；The average thickness of the inorganic layer is 30
μm or more and 200 μm hereinafter, the coating average thickness be 0.5 μm or more and 30 μm hereinafter, filling out in the inorganic layer
The median partial size of material is 5 μm or more and 100 μm hereinafter, the content of filler is 30 mass % or more and 78 mass % or less.
In the manufacturing method of the heat-radiating substrate, by making the principal component aluminum or aluminum alloy of substrate, and it is easy to carry out base
The processing of material.In addition, by by the filler using aluminium oxide as principal component and using phosphate glass as the adhesive of principal component
Particle is coated on the one side of substrate and is roasted, and can be easy and certainly be formed the inorganic matter of insulating properties and excellent thermal conductivity
Layer.In addition, simultaneously by the coating composition in the coated on one side of inorganic layer using silicone compounds as principal component thereafter
Be dried, the silicone compounds such as polymerize, thus, it is possible to be easy and certainly will be using Si oxide as principal component
Coating be formed in the one side of inorganic layer.
The preferred oxyalkylsiloxane of silicone compounds (alkoxyl siloxane), its oligomer (oligomer)
Or the polysiloxanes using the oxyalkylsiloxane.It is these compounds by the silicone compounds, is capable of forming intensity
And the coating that insulating properties is excellent.
The another invention completed in order to solve the problem is the manufacturing method of heat-radiating substrate, is that manufacture has with aluminium
Or aluminium alloy is as the one side of substrate and lamination in the substrate of principal component and the heat-radiating substrate of the heat-conducting layer with insulating properties
Method, characterized by comprising: coating and calcination steps contain in the coated on one side of the substrate using phosphate glass as master
The inorganic matter that the inorganic layer of the binder particles of ingredient composition is simultaneously roasted, and formed after the coating and calcination steps
The maximum gauge difference of layer is 0.6% or less relative to the ratio of maximum width.
According to the manufacturing method, it can be easy and certainly obtain ratio of the maximum gauge difference relative to maximum width
For 0.6% heat-radiating substrate below.
Herein, so-called " principal component " or " main body " refer to most ingredients in terms of quality criteria (for example, 50 mass % with
On).About " maximum width ", refer to the longest axis in the case where under heat-radiating substrate vertical view being round or oval, in substrate or
Heat-radiating substrate refers to longest diagonal line in the case where overlooking as polygon." maximum gauge is poor " refers to thick and most thin portion
The difference of the thickness divided." ratio of the maximum gauge difference relative to maximum width " is that the maximum width of heat-radiating substrate is being set as L
(mm), in the case that maximum gauge difference is set as X (mm), opposite amount of warpage is set as B (%), based on calculated by formula below (1)
Value." median partial size ", which refers to, becomes volume aggregate-value in the size distribution acquired by laser (laser) diffraction scattering method
50% partial size.
B=(X/L) × 100 (1)
[invention effect]
As mentioned above, heat-radiating substrate of the invention is excellent in terms of insulating properties and thermal diffusivity.In addition, dress of the invention
It sets due to having the heat-radiating substrate, so insulating properties and thermal diffusivity are excellent.In addition, the manufacturing method of heat-radiating substrate of the invention
Insulating properties and the excellent heat-radiating substrate of thermal diffusivity can be obtained.Therefore, the heat-radiating substrate and device can be suitably used for small
The electronic component that type direction is developed.
As mentioned above, as a result heat-radiating substrate of the invention causes excellent in terms of radiating efficiency because reducing warpage.
In addition, the device of the invention is due to having the heat-radiating substrate, so radiating efficiency is excellent.In addition, heat-radiating substrate of the invention
Manufacturing method can be easy and certainly obtain the heat-radiating substrate.Therefore, the heat-radiating substrate and device can be used suitably
In the electronic component developed to miniaturization.
Specific embodiment
Hereinafter, being illustrated to the embodiment of the manufacturing method of heat-radiating substrate of the invention, device and heat-radiating substrate.
[heat-radiating substrate]
The heat-radiating substrate mainly has substrate and lamination in the one side of the substrate and with the heat-conducting layer of insulating properties.
< substrate >
Substrate is using aluminum or aluminum alloy as principal component, and in a face lamination heat-conducting layer.
In the case where the principal component of substrate is aluminium alloy, the content of magnesium of the preferably aluminium alloy is few.Specifically, it is preferable that
Aluminium alloy other than 5000 series of JIS-H4000 (2014) defined or 6000 series.In this way, few by using content of magnesium
Aluminium alloy can reduce removing of the inorganic layer from substrate as substrate.
In addition, as the aluminum or aluminum alloy, the aluminium alloy of 3000 series of more preferable JIS-H4000 (2014) defined.
In addition, substrate in addition to aluminium and aluminium alloy, also may include such as copper, iron, these alloy.Herein, aluminium is led
Heating rate is 200W/mK~250W/mK or so, and the thermal conductivity of copper is 350W/mK~400W/mK or so, and the thermal conductivity of iron is 80W/
MK or so.Therefore, by adding copper, it can be improved the thermal conductivity of substrate.In addition, copper and iron are firmer than aluminium, so by adding
Add copper, iron or these alloy, can be improved the intensity of substrate.
The lower limit of average thickness as substrate, preferably 0.1mm, more preferable 0.5mm.On the other hand, as described average
The upper limit of thickness, preferably 5mm, more preferable 4mm.If the average thickness is less than the lower limit, there is the strong of the heat-radiating substrate
Spend reduced worry., whereas if the average thickness is more than the upper limit, then it is difficult to for the heat-radiating substrate being used for through small-sized
The worry of the e-machine of change.
< heat-conducting layer >
Heat-conducting layer is one side of the direct lamination in substrate, and has inorganic layer.In addition, heat-conducting layer can also also have painting
Layer.
The heat-conducting layer can only lamination substrate one side, can also with lamination on two sides, but preferably only lamination one side.
In general, the thermal conductivity of aluminium is better than phosphoric acid glass, so the face of the side of the non-lamination heat-conducting layer by making the heat-radiating substrate and cooling
The radiating efficiency of material, the heat-radiating substrate further increases.
(inorganic layer)
Inorganic layer is layer of the direct lamination in the one side of the substrate.It, can be to the heat dissipation base by the inorganic layer
Plate assigns insulating properties.In addition, the inorganic layer, which has in using phosphate glass as the adhesive of principal component, is dispersed with filler
Structure.Inorganic layer has insulating properties and high-termal conductivity as a result,.
The lower limit of average thickness as inorganic layer is 30 μm, preferably 50 μm.On the other hand, as the average thickness
The upper limit of degree is 200 μm, preferably 150 μm, more preferable 100 μm.If the average thickness is less than the lower limit, there have to be easy
The defects of generating the pin hole in inorganic layer, the worry for causing the insulating properties of inorganic layer to reduce., whereas if the average thickness
Degree is more than the upper limit, then the thermal resistance of organic/inorganic substance layer increases, the worry for causing the thermal diffusivity of the heat-radiating substrate to reduce.
In addition, 1.5 times or more and 10 times or less of the median partial size of the preferably following fillers of the average thickness of inorganic layer
Thickness.In this way, by the way that the median partial size of the average thickness of inorganic layer and filler is set as the range, it can be with Gao Shui
Insulating properties and thermal conductivity flat while that realize inorganic layer.
In addition, in the case where inorganic layer contains following fillers, the middle position of the average thickness preferred filler of inorganic layer
1.5 times or more and 10 times of thickness below of number partial size.In this way, by by the median of the average thickness of inorganic layer and filler
Partial size is set as the range, and the insulating properties and thermal conductivity of inorganic layer can be realized simultaneously with high level.
(adhesive)
Adhesive is using phosphate glass as principal component.In addition, being glued in the case where inorganic layer contains following fillers
Mixture can fill the gap of filler.
The phosphate glass preferably fusing point is lower than the metal of the principal component as the substrate.In this way, passing through phosphate glass
The fusing point of glass is lower than the fusing point of the metal, can be readily formed inorganic layer by following methods.Specifically, for example existing
In the case that the principal component of the substrate is aluminium, since the fusing point of aluminium is 660 DEG C or so, so the fusing point of phosphate glass is preferred
450 DEG C or more and 580 DEG C or less.
In addition, the thermal conductivity of the phosphate glass is generally greater than epoxy resin etc..Therefore, with the tree of existing heat-radiating substrate
Rouge layer is compared, and the radiating efficiency of the inorganic layer is more excellent.Specifically, the thermal conductivity of usually resin is 0.1W/mK or so,
The thermal conductivity of phosphate glass is 1.0W/mK or so.
(filler)
Filler is dispersed in inorganic layer, and improves the thermal conductivity of inorganic layer.If each particle of filler not with its
His particle contact and be dispersed in inorganic layer, then the thermal conductivity of organic/inorganic substance layer becomes difficult to the worry improved, therefore, filler
Each particle be preferably in contact with each other.
The filler is using aluminium oxide as principal component.In this way, the principal component aluminium oxide by making filler, can reduce
The cost of filler.In addition, by making the principal component aluminium oxide of filler, and the thermal conductivity of inorganic layer is improved, the bonding of this external cause
The adhesion of agent and filler improves, and the intensity of inorganic layer improves.
The filler than alumina, can also contain amorphous silicon oxide, crystalloid silica, aluminium nitride, nitridation
Silicon etc..
In addition, as filler, the preferred thermal conductivity filler that is higher than described adhesive.It is same in the thermal conductivity and adhesive of filler
Etc. degree or lower than in the case where adhesive, even if addition filler, the thermal conductivity of inorganic layer will not improve.
The lower limit of median partial size as the filler is 5 μm, preferably 10 μm.On the other hand, as the median
The upper limit of partial size is 100 μm, preferably 50 μm, more preferable 30 μm.If the median partial size is less than the lower limit, fill out
Each particle of material becomes difficult to contact, the worry that the thermal conductivity of inorganic layer is difficult to improve., whereas if the median partial size
More than the upper limit, then has and be difficult to become blocked up load by the worry or inorganic layer of following rubbing methods formation inorganic layer
Sorrow.
The lower limit of content ratio as the filler in the inorganic layer, be 30 mass %, preferably 35 mass %,
More preferable 40 mass %.On the other hand, the upper limit as the content ratio, preferably 85 mass %, more preferable 80 mass %, into
And it is preferred that 75 mass %.If the content ratio is less than the lower limit, the load that the thermal conductivity of organic/inorganic substance layer is difficult to improve
Sorrow., whereas if the content ratio is more than the upper limit, then has because of the mutual low adhesion of filler, cause to be difficult to form nothing
The worry of machine nitride layer.
(coating)
Coating is one side of the lamination in inorganic layer, by filling the bumps formed by the filler in inorganic layer, is made
The thickness uniformity of inorganic layer improves, and improves the insulating properties of the heat-radiating substrate.
In addition, the heat-radiating substrate is that the heaters such as the face of inorganic layer side and e-machine is usually made to contact, make substrate side
Face contact and use with coolant.In this case, the most surface of inorganic layer is directly exposed to the heater of high temperature, temperature
The substrate side spent towards inorganic layer gradually decreases, and the temperature for contacting side with coolant of substrate becomes minimum.In this way, the heat dissipation
The temperature of substrate become it is highest be inorganic layer side most surface near, therefore, pass through the most surface shape in the inorganic layer
At coating, the most surface of the high coating coated inorganic layer of heat resistance, to improve the heat resistance of the heat-radiating substrate.
In addition, the phosphate glass of the principal component as adhesive in inorganic layer is slightly worse in terms of water resistance, alkali gold
Belong to ingredient to be possible to flow out from phosphate glass, but by being able to suppress the alkali metal component with coating coated inorganic layer
Outflow.
The principal component of coating is Si oxide.As the Si oxide, such as crystalloid silica, noncrystal can be enumerated
Quartz glass etc., it is preferably noncrystal in these.The non-crystal thermal conductivity is usually 1.0W/mK or so, and described inorganic
The phosphate glass as adhesive principal component in nitride layer is same degree, therefore is used as coating, energy by using noncrystal
Enough inhibit the reduction of the thermal diffusivity of the heat-radiating substrate.
The principal component of coating is also silicon nitride, epoxy resin or acrylic resin sometimes.In these, preferably silica and
Silicon nitride, more preferable amorphous silicon oxide and the silicon nitride with poly- silicon azane (polysilazane) structure.
The lower limit of average thickness as coating is 0.5 μm, preferably 5 μm, more preferable 10 μm.On the other hand, as described
The upper limit of average thickness, preferably 50 μm, more preferable 40 μm, and then preferably 30 μm.If the average thickness is less than the lower limit,
The then filling in gaps such as pin hole in organic/inorganic substance layer and insufficient, leads to the insufficient worry of the insulating properties of the heat-radiating substrate.
, whereas if the average thickness is more than the upper limit, then there is coating to play a role as thermal insulation layer, lead to the heat-radiating substrate
The worry that the worry or coating that thermal diffusivity reduces crack.
The upper limit of the maximum gauge difference of the inorganic layer as the heat-radiating substrate relative to the ratio of maximum width be
0.6%, preferably 0.4%, more preferable 0.35%, and then preferably 0.25%.If the ratio is more than the upper limit, there is this to dissipate
The adhesion of hot substrate and heater or coolant reduces, and the thermal diffusivity of the heat-radiating substrate is caused to become difficult to the load improved
Sorrow.
As the lower limit of the maximum width, preferably 1.5cm, more preferable 2cm.On the other hand, as the maximum width
The upper limit, preferably 30cm, more preferable 25cm, and then preferred 20cm.If the maximum width is less than the lower limit, there is this to dissipate
Hot substrate becomes too small, and thermal diffusivity becomes difficult to the worry improved., whereas if the maximum width is more than the upper limit, then
There is the absolute value of the warpage of the heat-radiating substrate to become larger, is difficult to increased worry with the contiguity area of heater or coolant.
< advantage >
In the heat-radiating substrate, by making substrate using aluminum or aluminum alloy as principal component, and inorganic layer contains to aoxidize
Aluminium keeps the thermal conductivity of substrate and heat-conducting layer excellent as the filler of principal component and using phosphate glass as the adhesive of principal component
It is different.In addition, the heat resistance of heat-conducting layer is more excellent compared with the existing heat-conducting layer containing resin.In addition, the heat-radiating substrate due to
The concave-convex coated filling formed by filler in inorganic layer, so the thickness uniformity of the heat-radiating substrate improves.As a result
The insulating properties of the heat-radiating substrate improves.In addition, the temperature that the inorganic layer can be born is lower than the softening point of filler and adhesive,
It is 450 DEG C~480 DEG C or so, but the heat resisting temperature of the Si oxide of the principal component as the coating is more than 1000 DEG C.Therefore,
Have the coating using Si oxide as principal component by the heat-radiating substrate, and further increases the heat resistance of the heat-radiating substrate.
In addition, by using maximum gauge difference relative to maximum width ratio as the index for indicating amount of warpage, and make the ratio
The upper limit with coolant hereinafter, and contacting in the substrate side for making the heat-radiating substrate, making inorganic layer side and electronic component etc.
Heater contact in the case where, can effectively improve heat from heater to the mobile efficiency of the heat-radiating substrate and heat from this
Mobile efficiency of the heat-radiating substrate to coolant.As a result processing can be reduced by necessary minimal warpage, greatly improved
The thermal diffusivity of the heat-radiating substrate.
[device]
The device has the heat-radiating substrate.The heaters such as e-machine are disposed in the heat dissipation base specifically, can enumerate
Coolant is disposed in device made of the substrate side of the heat-radiating substrate by the heat-conducting layer side of plate.As the coolant, such as
Heat conduction members such as water cooling plant, air-cooling apparatus, cold sink etc. can be enumerated.
< advantage >
The device is due to having the heat-radiating substrate, so insulating properties and thermal diffusivity are excellent.
[manufacturing method of heat-radiating substrate]
The manufacturing method of the heat-radiating substrate mainly includes the following steps: coating and calcination steps, in the one side of the substrate
Coating contains filler using aluminium oxide as principal component and using phosphate glass as the inorganic matter of the binder particles of principal component
Layer composition is simultaneously roasted (inorganic layer forming step)；And coating and drying steps, after the coating and calcination steps
Simultaneously (coating is dried in coating composition of the coated on one side of the inorganic layer of formation using silicone compounds as principal component
Forming step).
Another manufacturing method of the heat-radiating substrate is to manufacture the substrate and lamination having using aluminum or aluminum alloy as principal component
The substrate one side and with insulating properties heat-conducting layer heat-radiating substrate method, and mainly include the following steps: coating and
Calcination steps contain the inorganic layer of the binder particles using phosphate glass as principal component in the coated on one side of the substrate
With composition and roasted (inorganic layer forming step).
In addition, the manufacturing method preferably in addition to the step, includes correction also after the inorganic layer forming step
The step of warpage of heat-radiating substrate (rectification step).In addition, the manufacturing method can also be included in the coating and calcination steps
Coating composition of the coated on one side of the inorganic layer formed afterwards using silicone compounds as principal component is simultaneously dried
Step (coating forming step).
About by manufacturing method heat-radiating substrate obtained, the maximum gauge difference of inorganic layer is relative to maximum width
Ratio is 0.6% or less.
< inorganic layer forming step >
In inorganic layer forming step, inorganic layer is formed in the one side of substrate.This step for example, pass through phosphoric acid
The crushing of salt glass and (binder particles preparation step) the step of prepare binder particles pass through the binder particles and filler
Mixing and (inorganic layer composition preparation step), coated inorganic nitride layer group the step of prepare inorganic layer composition
The step of closing object (application step) and the step of roasted to the inorganic layer being coated with composition (calcination steps).
(binder particles preparation step)
In binder particles preparation step, such as ball mill (pot mill), jet pulverizer (jet are used
The pulverizers such as mill), are crushed to required size for phosphoric acid glass, and obtain binder particles.
The lower limit of median partial size as described adhesive particle, preferably 2.5 μm, more preferable 3 μm, and then preferably 5 μm.
On the other hand, the upper limit as the median partial size, preferably 100 μm, more preferable 80 μm, and then preferably 50 μm.If described
Median partial size is less than the lower limit, then has the phosphate glass melted by the heating after coating not fully extended, cause
The worry that the uniformity of inorganic layer reduces., whereas if the median partial size is more than the upper limit, then there are binder particles
Worry not sufficiently mixed with filler, causing the uniformity of inorganic layer to reduce.
(inorganic layer composition preparation step)
In inorganic layer in composition preparation step, described adhesive particle can be directly used as to inorganic layer group
Object is closed, inorganic layer group can also be prepared and being mixed described adhesive particle with filler, water or water solvent
Close object.
It as the water solvent, such as can enumerate: methanol (methanol), ethyl alcohol (ethanol), normal propyl alcohol
(propanol), the aliphatic lower alcohol of the linear chain or branched chains such as 2- propyl alcohol or the tert-butyl alcohol (tert-Butyl alcohol)；
The aromatic alcohols such as benzylalcohol (benzyl alcohol) or 2- phenylethanol (2-phenyl ethanol)；
Propylene glycol (propylene glycol), ethylene glycol (ethylene glycol), diethylene glycol, triethylene glycol, four
The polyethylene glycol such as ethylene glycol, PEG200, PEG400；
The polypropylene glycols such as dipropylene glycol, tripropylene glycol；
The polyalcohols such as 1,3 butylene glycol, 2,3- butanediol, 1,4- butanediol, 1,5- pentanediol, hexylene glycol；
Glycol monoethyl ether (ethylene glycol monomethyl ether), ethylene glycol monoethyl ether, ethylene glycol two
Methyl ether, ethylene glycol diethyl ether, 3- methyl -3- methoxybutanol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol
Dimethyl ether, diethylene glycol diethyl ether, triethylene glycol monomethyl ether, Triethylene glycol ethyl ether, triethylene glycol dimethyl ether, triethylene glycol two
Ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, ethylene glycol monomethyl ether acetate, ethylene glycol monoethylether acetate etc. are more
The alkyl ether derivative of first alcohol；
Lower ketones such as acetone (acetone) etc..
In the case where the inorganic layer composition contains water or water solvent, as inorganic layer composition
The lower limit of solid component concentration, preferably 40 mass %, more preferable 50 mass %.On the other hand, as the solid component concentration
The upper limit, preferably 70 mass %, more preferable 65 mass %.If the solid component concentration is less than the lower limit, have because applying
Roasting after cloth and the thickness of inorganic layer is greatly reduced, it is difficult to obtain the worry of the inorganic layer of required thickness, or roasting
The time is expended, the worry for causing the manufacture efficiency of the heat-radiating substrate to reduce., whereas if the solid component concentration is more than described
The upper limit then has the worry for being difficult to equably coated inorganic nitride layer composition.
(application step)
In application step, the inorganic layer is coated on to the one side of substrate with composition, forms film.As the painting
Cloth method, such as coating machine (coater) coating, spraying (spray) coating, printing coating can be enumerated etc..In these, just
It can easily and evenly be coated with for the viewpoint of the inorganic layer composition, preferably spraying coating and printing coating.
In the case where the inorganic layer includes water or water solvent with composition, preferably it is being coated with the inorganic layer
After forming film with composition, makes the dried coating film and remove solvent.As the lower limit of the drying temperature, preferably 15 DEG C,
More preferable 20 DEG C.On the other hand, the upper limit as the drying temperature, preferably 100 DEG C, more preferable 90 DEG C.If the drying
Temperature is less than the lower limit, then has dry consuming time, the worry for causing the manufacture efficiency of the heat-radiating substrate to reduce.Conversely, such as
Drying temperature described in fruit is more than the upper limit, then the binder particles melting in organic/inorganic substance layer composition, it is difficult to be formed equal
The worry of even inorganic layer.
As the lower limit of the drying time, preferably 10 minutes, more preferable 30 minutes.On the other hand, as the drying
The upper limit of time, preferably 600 minutes, more preferable 300 minutes.If the drying time is less than the lower limit, have not from nothing
Water removal or water solvent are fully removed in the film of machine nitride layer composition, are difficult to be formed because of remaining solvent uniform inorganic
The worry of nitride layer., whereas if the drying time is more than the upper limit, then the load for thering is the manufacture efficiency of the heat-radiating substrate to reduce
Sorrow.
(calcination steps)
In calcination steps, by the roasting film, the binder particles in film are melted, and forms inorganic matter
Layer.
As the lower limit of the maturing temperature, preferably 430 DEG C, more preferable 450 DEG C.On the other hand, as the roasting temperature
The upper limit of degree, preferably 580 DEG C, more preferable 550 DEG C.If the maturing temperature is less than the lower limit, have in the film
The worry that binder particles do not melt fully., whereas if the maturing temperature is more than the upper limit, then have in the film
Filler melting, and the worry of the inorganic layer with sufficient thermal conductivity can not be formed.
As the lower limit of the calcining time, preferably 5 minutes, more preferable 10 minutes, and then preferably 15 minutes, particularly preferably
20 minutes.On the other hand, the upper limit as the calcining time, preferably 1 hour, more preferable 50 minutes.If when the roasting
Between be less than the lower limit, then the worry for thering are the binder particles in the film not melt fully., whereas if the roasting
Time is more than the upper limit, then the worry for having the manufacture efficiency of the heat-radiating substrate to reduce.
< coating forming step >
In coating forming step, the one side of the inorganic layer formed in the inorganic layer forming step, which is formed, to be applied
Layer.This step for example mainly includes the one side that the coating composition containing silicone compounds is coated on to inorganic layer
Step (application step) and the step (drying steps) for keeping the coating composition after coating dry.
(application step)
In application step, film is formed and coating composition to be coated on to the one side of inorganic layer.In coating
Be using Si oxide as principal component in the case where, the coating composition mainly contains silicone compounds.
The silicone compounds are the compounds with siloxanes key, it is possible to have the substituent groups such as alkyl (alkyl).
As the silicone compounds, preferably oxyalkylsiloxane, its oligomer or the polysiloxanes using the oxyalkylsiloxane.Make
For the oxyalkylsiloxane, for example, the oxyalkylsiloxanes oligomer such as can enumerate alkoxy disiloxane, have it is three-dimensional netted
The alkoxy polysiloxane etc. of structure.Herein, so-called " siloxane oligomer " refers to that 2~100 or so siloxanyl monomers are poly-
Oligomer made of conjunction.
In addition, at least part of the oxyalkylsiloxane preferably its hydrogen atom is substituted with a substituent.As the substitution
Base, optimizing alkyl and phenyl, more preferable methyl and phenyl.
In addition, the coating composition can also contain solvent.As the solvent, such as the water and water can be enumerated
Series solvent and nonpolar solvent.
It as the nonpolar solvent, such as can enumerate: hexane (hexane), heptane (heptane), octane
(octane), the chain types hydrocarbon solvent such as pentane (pentane), the ester ring type hydrocarbons solvent such as hexamethylene, benzene (benzene), toluene
(toluene), aromatic hydrocarbon solvents such as dimethylbenzene (xylene) etc..In these, optimization aromatic hydrocarbon solvent, more preferable toluene
And dimethylbenzene.
In the case where the coating composition also contains solvent, solid component concentration as coating composition
Lower limit, preferably 15 mass %, more preferable 20 mass %, and then preferably 25 mass %.On the other hand, dense as the solid component
The upper limit of degree, preferably 75 mass %, more preferable 65 mass %, and then preferably 60 mass %.If the solid component concentration is small
In the lower limit, then has when coating composition is coated on inorganic layer, enter to the small cracking on inorganic layer surface etc.
Inside silicone compound object amount reduction tendency.Therefore, there is immersion degree of the coating in described small cracking etc. not
Sufficiently, the worry that will not be sufficiently improved by the insulating properties improvement effect that coating obtains., whereas if the solid component concentration is super
The upper limit is crossed, then has the worry for being difficult to that coating composition is uniformly coated to inorganic layer surface.
As the coating composition to be coated on to the coating method of inorganic layer, for example, can enumerate using hairbrush,
The rubbing method of coating machine etc. is capable of the bumps of expeditiously content inorganic filling layer according to these methods.On the other hand, vacuum is steamed
Plating method or sputter (sputtering) method have coating composition to the bumps formed by filler or the pin hole of inorganic layer etc.
The worry that the infiltration in gap becomes inadequate.Therefore, rubbing method is used in the manufacturing method of the heat-radiating substrate.
(drying steps)
In drying steps, make the dried coating film formed in the application step.By in atmospheric pressure to the film
It is dried, and oxyalkylsiloxane, its oligomer or the hydrolysis using the polysiloxanes of the oxyalkylsiloxane is utilized to generate
Si oxide, to form coating.
As it is described dry when temperature lower limit, preferably 15 DEG C, more preferable 20 DEG C.On the other hand, as the drying
The upper limit of temperature, preferably 200 DEG C, more preferable 180 DEG C.If the drying temperature is less than the lower limit, having not formed has
The worry of the coating of sufficient intensity., whereas if the drying temperature is more than that the upper limit, then organic/inorganic substance layer or substrate are damaged
Worry.
In addition, the lower limit as the drying time, preferably 1 hour, more preferable 2 hours, and then preferably 5 hours.It is another
Aspect, as the upper limit of the drying time, preferably 48 hours, more preferable 36 hours.If the drying time is less than described
Lower limit then has the worry of the not formed coating with sufficient intensity., whereas if the drying time is more than the upper limit, then
The worry for thering is the manufacture efficiency of the heat-radiating substrate to reduce.
Alternatively, it is also possible to by being ground etc. after forming very thick coating to the surface of the coating, and adjust coating
Average thickness, thus formed needed for average thickness coating.In the case where forming coating by such method, can become
It is easy to be finely adjusted the average thickness of coating, is furthermore easy to improve the surface smoothness of coating, is easy to play and be obtained by coating
The improvement effect of the insulating properties obtained.
< advantage >
In the manufacturing method of the heat-radiating substrate, by making the principal component aluminum or aluminum alloy of substrate, progress is become easy
The processing of substrate.In addition, by by the filler using aluminium oxide as principal component and using phosphate glass as the bonding of principal component
Agent particle is coated on the one side of substrate and is roasted, and can be easy and certainly be formed the inorganic of insulating properties and excellent thermal conductivity
Nitride layer.In addition, passing through the coating composition in the coated on one side of inorganic layer using silicone compounds as principal component thereafter
And be dried, the silicone compounds such as it polymerize, thus, it is possible to be easy and certainly formed in the one side of inorganic layer
Using Si oxide as the coating of principal component.
< rectification step >
In rectification step, the warpage of heat-radiating substrate is reduced.
As apparatus for correcting used in this step, such as pressurizing device can be enumerated.As the pressurizing device, such as can
To use the known method of plate pressurizing device, hot pressing (hot press) device, micro concavo-convex processing unit (plant) etc., but having can not
The worry or inorganic layer and substrate of the abundant warpage for reducing heat-radiating substrate deform and damaged worry, therefore preferably makes
With dedicated flatness correcting device.
Herein, inventors have found that the maximum gauge difference of heat-radiating substrate can be set as relative to the ratio of maximum width
State warpage index.Such as the aluminium base for length 50mm, width 50mm, average thickness 2mm, maximum width become 50 × 1.41
=70.5mm.Herein, when the one side in the substrate forms 100 μm of average thickness of inorganic layer, and the maximum thickness of inorganic layer
When degree difference becomes 1.2mm, warpage becomes 1.2 70.5 × 100=1.7% of ÷.The radiating efficiency of the heat-radiating substrate is poor, it is desirable to reduce
The processing of warpage, therefore the processing for reducing warpage is verified using various apparatus for correcting.
Firstly, as the apparatus for correcting, using having multiple rollers (roller) and heat-radiating substrate passes through processing therebetween
Device, as a result inorganic layer cracks.
In addition, using the case where plate pressurizing device by clamping heat-radiating substrate above and below plate is as the apparatus for correcting
Under, warpage seems reduction in pressure process, but if reducing pressure, then a possibility that warpage recovery is big.Such as to having
In the case that the heat-radiating substrate of the size and warpage carries out plate pressurization, the maximum gauge difference of the inorganic layer after pressurization becomes
1.0mm, warpage become 1.4%, and the reduction of warpage is simultaneously insufficient.
In addition, the heat of heating and the plate clamping by carbon (carbon) system is carried out at 200 DEG C while using pressurization
In the case that pressure device is as the apparatus for correcting, also in the same manner as plate pressurization, the maximum of the inorganic layer after pressurization
Thickness difference becomes 1.0mm, and warpage becomes 1.4%, and the reduction of warpage is simultaneously insufficient.
In addition, in forming multiple small protrusions using at least one side plate in top panel and lower panel and being pressed against its protrusion
In the case that the micro concavo-convex device that heat-radiating substrate pressurizes is as the apparatus for correcting, make because of the part contacted with protrusion
Inorganic layer cracks or substrate surface generates big recess.
In contrast, in the case where using following dedicated flatness correcting devices as the apparatus for correcting, it is inorganic
Nitride layer is not likely to produce crackle, in addition, warpage is also substantially reduced.
As the flatness correcting device, such as the pressurization part and pressurization that has and can pressurize to metal plate can be enumerated
The device of platform.About the device, the pressurization platform has the annular section for abutting metal plate in opposite surface, and the pressurization part is right
It is hemispherical multiple raised that into surface side, the inside of at least described annular section, which has front end,.
In addition, the pressurization part of the flatness correcting device has basal disc and tune for the multiple protrusion is arranged
The mechanism of the projecting height of whole the multiple protrusion, as long as improving projecting height to the protrusion in the annular section
Degree.In this way, by becoming larger rising height towards the central portion of the pressurization part, can be bigger to warpage dissipate
Hot substrate central portion applies stronger pressure, and can expeditiously reduce the warpage of the heat-radiating substrate.
In addition, the buffering sheet material such as resin sheet is preferably arranged in pressurization between the pressurization part and the heat-radiating substrate.
Thereby, it is possible to more reliably prevent the breakage of the inorganic layer of the heat-radiating substrate.As the resin sheet, preferably silicone
(silicone) system and teflon (Teflon) (registered trademark) system.In addition it is also possible in addition to the buffering sheet material, also in institute
The outer surface lamination resin layer of the front end of protrusion is stated, or the outer surface lamination resin layer in the front end of the protrusion carrys out generation
For the buffering sheet material.By the way that there are such resin layers, the broken of the inorganic layer of the heat-radiating substrate also can be more reliably prevented
Damage.
In addition, the flatness correcting device be preferably formed with pressurization platform on pressurize the heat-radiating substrate it is big
Small matched spot-facing (counter bore).Specifically, spot-facing can be listed below: formed with pressurization platform central portion into
The size in the face direction of the heat-radiating substrate of row pressurization and the concave segment difference of thickness matching, and then formed in segment difference than the segment difference
The hole of a small circle.Thereby, it is possible to be further reduced the breakage of inorganic layer caused by due to the heat-radiating substrate is over-pressurized etc..
< advantage >
According to the manufacturing method, it can be easy and certainly obtain ratio of the maximum gauge difference relative to maximum width
For 0.6% heat-radiating substrate below.
[other embodiments]
The heat-radiating substrate can carry out rectification step after its formation such as the embodiment and be made to correct warpage
It makes, can also be manufactured whiles adjusting the thickness etc. of inorganic layer in such a way that warpage reduces.In this case, it is not necessarily to
Warpage is adjusted after fabrication.
In addition, the coating can carry out lamination after the rectification step.In this way, by being applied in correction warpage back-set bed
Layer, can be by generated fine crack on coating content inorganic filling layer, so as to expeditiously improve the heat-radiating substrate
Insulating properties.
[other embodiments]
The manufacturing method of the heat-radiating substrate, device and heat-radiating substrate is not limited to the embodiment.
The heat-radiating substrate can also have the substrate or inorganic layer of multilayer in a thickness direction.In addition, in this case,
The substrate of multilayer or the composition of inorganic layer can be different.In this way, different substrate or inorganic layer are formed by having multilayer,
The various characteristics of the heat-radiating substrate can suitably be adjusted.
Similarly, which can also have the coating of multilayer in a thickness direction, but coating is preferably as above
It is relatively thin, therefore preferably only 1 layer.
[embodiment]
Hereinafter, illustrating the present invention in further detail by embodiment, but the present invention is not limited to these embodiments.
[embodiment 1]
The manufacture > of < heat-radiating substrate
It, will be as the aluminium sheet of substrate (industrial pure 1050, average thickness 2mm) using pleating (shirring) processing machine
It is cut into length 50mm, width 50mm, and utilizes mild detergent clean the surface.
Secondly, using ball mill, by as the low melting point phosphate glass fragment (flake) of phosphate glass, (Japan is rich
" VQ0028 " of Rett (Nippon Frit) company) it is crushed in such a way that median partial size becomes 20 μm, obtain adhesive
Particle.Into the binder particles, alumina packing (the Showa electricity as filler is mixed in a manner of becoming 50:50 using mass ratio
" the round alumina AS-30 " of work company, 20 μm of median partial size).Water is added into the mixture, and is stirred, thus
Prepare inorganic layer composition.The solid component concentration of the inorganic layer composition is 60 mass %.
Secondly, using jet pulverizer, by low melting point phosphate glass fragment (Japanese Fu Ruite (Nippon Frit)
" VQ0028 " of company) it is crushed in such a way that median partial size becomes 5 μm, obtain binder particles.To the adhesive grain
Water is added in son, and is stirred, and inorganic layer composition is thus prepared.The solid component of the inorganic layer composition is dense
Degree is 60 mass %.
Using spray gun (" G151 " of A Naisite rock field (Anest Iwata) company), by the inorganic layer of the preparation
Substrate surface mist is sprayed 5 seconds with composition, heat drying 30 minutes at 60 DEG C in drying oven.Thereafter, 480 in electric furnace
It is roasted 30 minutes at DEG C, and forms 80 μm of average thickness of inorganic layer.Thereafter, it is roasted 30 minutes at 450 DEG C in electric furnace, from
And acquisition is formed with the heat-radiating substrate of 100 μm of average thickness of inorganic layer.
After the cooling of the laminate of the inorganic layer and substrate, using hairbrush, by silicone compounds, (SHIN-ETSU HANTOTAI's chemistry is public
" KR400 " of department) it is coated on the surface of inorganic layer, extra compound is removed using scraper (Squeegee).Then, will
The laminate is put into vacuum drying oven be de-gassed after, under atmospheric pressure, dry 24 hours at 25 DEG C.As a result, in inorganic layer
Surface form 10 μm of average thickness of coating, and obtain heat-radiating substrate.
The expanded central in the face of the heat-radiating substrate and generate warpage, the difference of the thickness of the thickness and peripheral portion of central portion is
1.2mm.For the heat-radiating substrate, the maximum width of heat-radiating substrate is set as L (mm), maximum gauge difference is set as X (mm), is based on formula
(1) opposite amount of warpage B (%) is found out.
B=(X/L) × 100 ... (1)
Herein, L is 50 × 1.41=70.5mm, X 1.2mm, so B becomes 1.7%.
Herein, the average thickness of inorganic layer is the whirlpool using Brigit Fischer (Schmidt) instrument (Fischer instruments) company
Electric current film thickness gauge " MMS3AM ") it is measured, the average thickness of coating is that (Hitachi's electric power solves using scanning electron microscope
" S4000 " of scheme (Hitachi Power Solutions) company) it is measured.
[embodiment 2 and 3]
Temperature when by the type of used silicone compounds and drying when forming coating is set as table 1 such as and remembers
It carries, in addition to this, obtains heat-radiating substrate in the same manner as example 1.
[embodiment 4~10 and comparative example 1~6]
By the type of binder particles and median partial size, the median partial size of filler and additive amount, inorganic layer it is flat
Equal thickness, silicone compounds type and there is uncoated or average thickness to be set as described in Table 1, in addition to this, with
The identical mode of embodiment 1 obtains heat-radiating substrate.In addition, "-" indicates that heat-radiating substrate does not have coating in table 1.
(binder particles)
A-1: phosphate glass (" VQ0028 " of Japanese Fu Ruite (Nippon Frit) company)
A-2: pyrex (Guan Gu natural sciences company " 4521 ")
(silicone compounds)
B-1: " KR400 " of chemical company, SHIN-ETSU HANTOTAI (is liquid under room temperature through methyl substituted oxyalkylsiloxane oligomer
Body)
B-2: " KR251 " of chemical company, SHIN-ETSU HANTOTAI is (through methyl substituted alkoxy polysiloxane, solid component concentration 20
Quality % (catalogue (catalog) value))
B-3: (alkoxy polysiloxane replaced through methyl and phenyl, solid component are dense by " KR255 " of chemical company, SHIN-ETSU HANTOTAI
Degree is 50 mass % (Directory Value))
[table 1]
[evaluation]
According to sequence below, the heat-radiating substrate of Examples and Comparative Examples is evaluated.
The crackle > of < inorganic layer and coating
The surface of the coating behind surface and lamination coating for the inorganic layer before lamination coating carries out naked eyes sight respectively
It examines, crackle is evaluated according to benchmark below.In evaluation below, A is qualification.
A: it does not crack.
B: it cracks.
C: cracking, and the bumps of clearly visible layer surface.
The minimum proof voltage > of <
For the heat-radiating substrate of Examples and Comparative Examples, disruptive test the instrument (" GPT- of gwinstek (INSTEK) company is used
9802 ", direct current (direct current, DC) mode), by positive terminal, (stainless steel (stainless) of diameter 15mm is made
Spheric electrode) it is connected to heat-conducting layer side, negative terminal is connected to substrate side.Thereafter, slowly apply DC voltage, measure respectively
5 are in the voltage when electric current for flowing through 1mA or more, and minimum therein is set as minimum proof voltage.According to benchmark pair below
The minimum proof voltage is evaluated.In evaluation below, A is qualification.
A:500V or more
B: less than 500V
[table 2]
As shown in table 2, the crackle of each layer of the heat-radiating substrate of embodiment and minimum proof voltage are excellent, and insulating properties is excellent.
Especially with embodiment 1, the average grain diameter of binder particles of the silicone oligomers, that is, KR400 as coating of low relative molecular
It is average grain diameter for 3 μm, filler is 20 μm and the average thickness of inorganic layer is 80 μm or more embodiment 2, embodiment 3, real
It applies example 5 and embodiment 6 and the silicone compounds (B-3) that solid component concentration is 25 mass % or more is used to form coating
Embodiment 10 it is more excellent in terms of minimum proof voltage.
On the other hand, in comparative example 1, comparative example 2 of the average thickness less than 30 μm of inorganic layer, nothing for not having filler
The average thickness of machine nitride layer is more than that 200 μm of comparative example 3, the average thickness of the coating comparative example 4, the filler that are more than 30 μm are averaged
Comparative example 5 of the partial size less than 5 μm, filler content ratio be more than that inorganic layer or coating generate in the comparative example 6 of 78 mass %
Crackle, in addition, minimum proof voltage is relatively low, poor insulativity.
[embodiment 1A]
Using dedicated flatness correcting device, warpage correction is carried out to the heat-radiating substrate according to sequence below.
As the flatness correcting device, filled using the flatness correcting for having flat pressurization part and the platform that pressurizes
It sets.In the central part of the pressurization part, the hemispherical protrusion that front end is radius 2.6mm is matched so that the interval 7mm is clathrate
If 7 × 7.In the protrusion, 1 of bosom portion is 0.5mm higher than the protrusion of peripheral portion, in 3 × 3 protrusions of central part, removes
8 other than 1 of bosom portion are 0.3mm higher than the protrusion of peripheral portion.
In addition, by forming the hole of diameter 46mm in the center of the pressurization platform, and the heat dissipation base is loaded on the hole
Plate, and contact the part periphery about 2mm of heat-radiating substrate with pressurization platform, thus keep heat-radiating substrate.
Heat-radiating substrate is clamped by the pressurization part and pressurization platform, is pressurizeed from the two sides of heat-radiating substrate, thus correction heat dissipation
The warpage of substrate.Herein, it is based on the formula (1), opposite amount of warpage B is found out to the heat-radiating substrate after correction.L and phase before correction
It together, is 70.5mm, the X in embodiment 1A is 0.095mm, so the B of embodiment 1A becomes 0.13%.
[embodiment 2A~5A and comparative example 4A and 5A]
Pressure when by presser unit and pressurization is set as the value recorded in table 3, in addition to this, with identical with embodiment 1A
Mode corrects the warpage of heat-radiating substrate.Amount of warpage after correction and the opposite amount of warpage acquired based on the formula (1) are shown in table
3。
Herein, in embodiment 5A and comparative example 5A, since the thickness of the central part of heat-radiating substrate becomes smaller than peripheral portion
Thickness, so X is " thickness-central part thickness of peripheral portion ".
[comparative example 1A]
As correcting unit, use plate hand operated press (" the Hand Press1-312-01 " of sub- prosperous (AS ONE) company of speed)
Instead of the dedicated flatness correcting device, pressurize under conditions of moulding pressure 15kg to heat-radiating substrate.After pressurization,
Opposite amount of warpage is found out based on the formula (1).
[comparative example 2A]
As correcting unit, using described in hot press (" High-multi 5000 " of electric wave industrial group, Fuji) replacement
Dedicated flatness correcting device, to heat dissipation under conditions of environmental pressure 0.2MPa, 300 DEG C of pressed temperature, moulding pressure 1t
Substrate pressurizes.After pressurization, cooling heat-radiating substrate finds out opposite amount of warpage based on the formula (1).
[comparative example 3A]
Warpage in comparative example 3A, when directly retaining to form inorganic layer without correction.
< evaluates >
Thermal resistance is measured according to heat-radiating substrate of the sequence below to the Examples and Comparative Examples.Firstly, preparation is on one side
The aluminium block (block) of 100mm, and by it in continuous circulation to keep in 18 DEG C of water dipping to depth 75mm.Then, it is radiating
On the face of the substrate side of substrate, heat-conducting cream (grease) (chemical company, SHIN-ETSU HANTOTAI is coated in a manner of becoming average thickness 0.08mm
" G747 ", thermal conductivity 0.9W/mK), heat-radiating substrate is adhered to the aluminium block using the heat-conducting cream.Thereafter, in heat-radiating substrate
Inorganic layer side face, by become average thickness 0.08mm in a manner of adhere to the heat-conducting cream, using the heat-conducting cream will radiate
Substrate and heater (heater) (the AIN ceramic heater of the subsidiary thermocouple of Ban Kou electric heating company, length 25mm, width
25mm, height 2.5mm) bonding.Apply the load of 5N from heater side to the laminate of the heater, heat-radiating substrate and aluminium block,
And each part is adhered each other, then by the installation of TC to aluminium block, to obtain the laminate of subsidiary heat-radiating substrate.
It is powered by the heater of the laminate to the subsidiary heat-radiating substrate, and heats heater.In heater
Measurement aluminium block surface temperature A (DEG C), heater body temperature H (DEG C) and heater power P at the time of the temperature in portion becomes 50 DEG C
(W), the thermal resistance R (DEG C/W) of heat-radiating substrate is calculated based on following formula (2).By the thermal resistance one of the heat-radiating substrate of Examples and Comparative Examples
And it is shown in table 3.
R=(H-A)/P ... (2)
[table 3]
As shown in table 3, it is proportionally reduced in the thermal resistance of heat-radiating substrate and opposite amount of warpage, and opposite amount of warpage is
In 0.6% embodiment below, thermal resistance becomes 1 DEG C/W or less.It is especially 0.25% embodiment 1A below with respect to amount of warpage
And in 2A, thermal resistance is 0.5 DEG C/W hereinafter, the thermal diffusivity of heat-radiating substrate is excellent.
On the other hand, in the comparative example that opposite amount of warpage is more than 0.6%, thermal resistance is higher, the thermal diffusivity of heat-radiating substrate
It is insufficient.Though comparative example 1A and comparative example 2A especially with existing pressuring machine and using dedicated appliance but
In the low comparative example 4A of moulding pressure, opposite amount of warpage is big, shows the high thermal resistance same with the comparative example 3A that does not correct.
[industrial utilizability]
From the description above, heat-radiating substrate of the invention is excellent in terms of insulating properties and thermal diffusivity.In addition, dress of the invention
It sets due to having the heat-radiating substrate, so insulating properties and thermal diffusivity are excellent.In addition, the manufacturing method of heat-radiating substrate of the invention
Insulating properties and the excellent heat-radiating substrate of thermal diffusivity can be obtained.Therefore, the heat-radiating substrate and device can properly use in
The electronic product of miniaturization development.
Claims (10)
1. a kind of heat-radiating substrate has the substrate using aluminum or aluminum alloy as principal component,
One side of the lamination in the substrate and the heat-conducting layer with insulating properties, it is characterised in that:
The heat-conducting layer has an inorganic layer, and the inorganic layer contains filler using aluminium oxide as principal component and with phosphate
Adhesive of the glass as principal component.
2. heat-radiating substrate according to claim 1, it is characterised in that: be also equipped with lamination in the one side of the inorganic layer and
Using Si oxide as the coating of principal component, and
The average thickness of the inorganic layer is 30 μm or more and 200 μm hereinafter, the average thickness of the coating is 0.5 μm or more
And 30 μm hereinafter,
The median partial size of filler in the inorganic layer is 5 μm or more and 100 μm hereinafter, the content of the filler is 30 matter
Measure % or more and 78 mass % or less.
3. heat-radiating substrate according to claim 2, it is characterised in that: the coating is with the noncrystal of the Si oxide
As main body.
4. heat-radiating substrate according to claim 1, it is characterised in that: the maximum gauge difference of the inorganic layer is relative to most
The ratio of big width is 0.6% or less.
5. heat-radiating substrate according to claim 4, it is characterised in that: the average thickness of the inorganic layer is 10 μm or more
And 200 μm or less.
6. heat-radiating substrate according to claim 2, it is characterised in that: be also equipped with lamination in the one side of the inorganic layer and
Using Si oxide, silicon nitride, epoxy resin or acrylic resin as the coating of principal component.
7. a kind of device, it is characterised in that: have heat-radiating substrate according to any one of claim 1 to 6.
8. a kind of manufacturing method of heat-radiating substrate according to claim 1, be manufacture have using aluminum or aluminum alloy as
The method of the heat-radiating substrate of one side of the substrate and lamination of principal component in the substrate and the heat-conducting layer with insulating properties, it is special
Sign is to include the following steps:
Coating and calcination steps contain filler using aluminium oxide as principal component in the coated on one side of the substrate and with phosphate
Glass as the binder particles of principal component inorganic layer composition and roasted；And
Coating and drying steps, the coated on one side of the inorganic layer formed after the coating and calcination steps is with silicone compound
Object as principal component coating composition and be dried.
9. the manufacturing method of heat-radiating substrate according to claim 8, it is characterised in that: the silicone compounds are alcoxyl
Radical siloxane, its oligomer or the polysiloxanes using the oxyalkylsiloxane.
10. a kind of manufacturing method of heat-radiating substrate according to claim 4, be manufacture have using aluminum or aluminum alloy as
The method of the heat-radiating substrate of one side of the substrate and lamination of principal component in the substrate and the heat-conducting layer with insulating properties, it is special
Sign is to include the following steps:
Coating and calcination steps, contain the binder particles using phosphate glass as principal component in the coated on one side of the substrate
Inorganic layer composition and roasted.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015143169A JP6517103B2 (en) | 2015-07-17 | 2015-07-17 | Heat dissipation substrate, device and method of manufacturing heat dissipation substrate |
| JP2015-143168 | 2015-07-17 | ||
| JP2015143168A JP2017028018A (en) | 2015-07-17 | 2015-07-17 | Heat dissipation substrate, device and manufacturing method for heat dissipation substrate |
| JP2015-143169 | 2015-07-17 | ||
| CN201610518471.0A CN106356343A (en) | 2015-07-17 | 2016-07-04 | Heat dissipation substrate, heat dissipation device, and manufacturing method of heat dissipation substrate |
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| CN201610518471.0A Division CN106356343A (en) | 2015-07-17 | 2016-07-04 | Heat dissipation substrate, heat dissipation device, and manufacturing method of heat dissipation substrate |
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| CN201610518471.0A Pending CN106356343A (en) | 2015-07-17 | 2016-07-04 | Heat dissipation substrate, heat dissipation device, and manufacturing method of heat dissipation substrate |
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| CN108878627B (en) * | 2017-05-09 | 2020-05-01 | 中国科学院化学研究所 | LED substrate and preparation method and application thereof |
| KR102191613B1 (en) * | 2017-09-15 | 2020-12-15 | 주식회사 엘지화학 | Composite material |
| KR102191614B1 (en) * | 2017-09-15 | 2020-12-15 | 주식회사 엘지화학 | Composite material |
| CN109256449A (en) * | 2018-09-20 | 2019-01-22 | 湖南源创高科工业技术有限公司 | A kind of LED substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101050356A (en) * | 2006-04-05 | 2007-10-10 | 富准精密工业(深圳)有限公司 | Composition object of heat conducting polusiloxane, and electronic component combination of using the composition object |
| US20100009203A1 (en) * | 2008-07-09 | 2010-01-14 | Yoshikazu Nageno | Insulation layer and method for producing thereof |
| JP2012222106A (en) * | 2011-04-07 | 2012-11-12 | Jsr Corp | Heat transfer member, laminate, and electronic component |
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| JP3361573B2 (en) * | 1993-08-04 | 2003-01-07 | 日本山村硝子株式会社 | Low temperature fired substrate composition and low temperature fired substrate obtained therefrom |
| TW200520670A (en) * | 2003-12-10 | 2005-06-16 | Univ Feng Chia | Integrated heat dissipation substrate and method for producing the same |
| US20050228097A1 (en) * | 2004-03-30 | 2005-10-13 | General Electric Company | Thermally conductive compositions and methods of making thereof |
| JP2009129801A (en) * | 2007-11-27 | 2009-06-11 | Denki Kagaku Kogyo Kk | Metal-based circuit board |
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2016
- 2016-07-04 CN CN201811414148.4A patent/CN109560051A/en active Pending
- 2016-07-04 CN CN201610518471.0A patent/CN106356343A/en active Pending
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101050356A (en) * | 2006-04-05 | 2007-10-10 | 富准精密工业(深圳)有限公司 | Composition object of heat conducting polusiloxane, and electronic component combination of using the composition object |
| US20100009203A1 (en) * | 2008-07-09 | 2010-01-14 | Yoshikazu Nageno | Insulation layer and method for producing thereof |
| JP2012222106A (en) * | 2011-04-07 | 2012-11-12 | Jsr Corp | Heat transfer member, laminate, and electronic component |
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| TW201705556A (en) | 2017-02-01 |
| TWI613843B (en) | 2018-02-01 |
| CN106356343A (en) | 2017-01-25 |
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