CN108878627B - LED substrate and preparation method and application thereof - Google Patents
LED substrate and preparation method and application thereof Download PDFInfo
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- CN108878627B CN108878627B CN201710320975.6A CN201710320975A CN108878627B CN 108878627 B CN108878627 B CN 108878627B CN 201710320975 A CN201710320975 A CN 201710320975A CN 108878627 B CN108878627 B CN 108878627B
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to the technical field of LEDs, and discloses an LED substrate, a preparation method and application thereof, wherein the LED substrate comprises a metal layer, a printing function adjusting layer, a printing conductive layer and a protective layer which are sequentially stacked from bottom to top; also disclosed is a method for preparing the LED substrate, which comprises the following steps: (1) providing a metal substrate as a metal layer, and optionally forming an oxide layer on the metal substrate; (2) forming a printing function adjusting layer on the plate obtained in the step (1), and then carrying out first heat treatment; (3) forming a printing conductive layer on the printing function adjusting layer subjected to the heat treatment by printing, and then performing a second heat treatment; (4) and forming a protective layer on the heat-treated printed conductive layer. The LED substrate has the advantages of good heat dissipation performance, simple preparation process and environmental friendliness.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to an LED substrate and a preparation method and application thereof.
Background
The great progress of the LED technology in the 90 s of the 20 th century has LED to the wider and wider application of LEDs, such as LED illumination. Although the LED lighting has the advantages of energy saving, safety, long service life, fast response, etc., the application thereof is still limited to a certain extent, mainly because the heat dissipation performance of the LED substrate is not good, for example, a high-power LED generally has a low light conversion efficiency, which is only 15-20%, a large amount of heat is generated in the application process, and the heat needs to be rapidly LED out from the substrate and the heat sink, so that the LED can be guaranteed to maintain a reasonable working temperature. This puts more demands on the LED substrate.
The LED substrate commonly used in the market at present mainly comprises four layers: a metal layer, a thermally conductive insulating layer, a conductive layer, and a protective layer (also referred to as a solder resist and character layer). The heat-conducting insulating layer has the greatest influence on the performance of the LED substrate, the existing heat-conducting insulating layer is mainly formed by bonding and mixing epoxy resin, polyolefin resin or polyimide resin with inorganic material particle fillers such as aluminum oxide and aluminum nitride, and the resin or high polymer material has the defects of low heat dissipation due to low heat conductivity although having good insulating and bonding curing effects, so that the application of the LED substrate is greatly limited; on the other hand, the conductive layer of the conventional substrate is mainly manufactured by a conventional process for etching copper, and a series of process steps such as film formation, exposure, development, etching, elution and the like are required, and the process is commonly referred to as a subtractive process in the field, and a large amount of acid and the like are often required in the processes, so that the conventional process has the problems of chemical pollution and complex whole process flow and poor heat dissipation effect. Therefore, there is a need for an improved LED substrate fabrication process.
Disclosure of Invention
The invention aims to solve the problems of poor heat dissipation performance of an LED substrate, complex preparation process of the substrate and environmental pollution in the prior art, and provides the LED substrate, the preparation method and the application thereof.
In order to achieve the above object, the present invention provides an LED substrate, wherein the LED substrate includes a metal layer, a printing function adjusting layer, a printing conductive layer, and a protective layer, which are sequentially stacked from bottom to top.
The invention also provides a method for preparing the LED substrate, which comprises the following steps:
(1) providing a metal substrate as a metal layer, and optionally forming an oxide layer on the metal substrate;
(2) forming a printing function adjusting layer on the plate obtained in the step (1), and then carrying out first heat treatment;
(3) forming a printing conductive layer on the printing function adjusting layer subjected to the heat treatment by printing, and then performing a second heat treatment;
(4) and forming a protective layer on the heat-treated printed conductive layer.
The invention also provides an application of the LED substrate as a base material for illumination.
According to the LED substrate, the printing function adjusting layer is formed on the surface of the metal layer in a mode of printing the high-heat-conductivity inorganic material, the printing function adjusting layer can meet the basic insulating property of the LED substrate, and can meet the requirements of temperature resistance stability and wettability of printing ink during printing, so that the printing ink cannot be infiltrated to the metal surface during printing, and the quality and the use safety of the LED substrate are guaranteed; in addition, the high-thermal-conductivity inorganic material is used for replacing resin or high polymer material with poor heat conductivity, so that the heat dissipation of the LED is facilitated, the heat dissipation performance of the LED substrate is effectively improved, and the service life of the LED is prolonged.
According to the preparation method of the LED substrate, the printing conductive layer is formed in a printing mode, a series of process steps of film forming, exposure, development, etching, elution and the like are not needed, the method can be called as an addition process, only the conductive layer is printed on the substrate, and the method is simple and convenient in process steps, small in environmental pollution, energy-saving and environment-friendly.
Additional features and advantages of the invention will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic structural diagram of an LED substrate according to the present invention.
Description of the reference numerals
1 Metal layer 2 oxide layer
3 printing function regulating layer 4 printing conductive layer
5 protective layer
Detailed Description
The following describes in detail specific embodiments of the present invention. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
The endpoints of the ranges and any values disclosed herein are not limited to the precise range or value, and such ranges or values should be understood to encompass values close to those ranges or values. For ranges of values, between the endpoints of each of the ranges and the individual points, and between the individual points may be combined with each other to give one or more new ranges of values, and these ranges of values should be considered as specifically disclosed herein.
The invention provides an LED substrate, which comprises a metal layer 1, a printing function adjusting layer 3, a printing conductive layer 4 and a protective layer 5 which are sequentially stacked from bottom to top as shown in figure 1.
Preferably, the LED substrate further includes an oxide layer 2 between the metal layer 1 and the print function adjusting layer 3. The oxide layer 2 may be an oxide film having a nano-scale or micro-scale pore structure grown in situ on the surface of the metal layer 1. The oxide film can prevent the phenomenon of upper layer and metal layer slippage caused by the excessively smooth metal surface, and can remarkably enhance the binding force between the metal layer 1 and the printing function adjusting layer 3.
In the present invention, the material of the oxide layer 2 may be any oxide grown in situ on the metal layer 1, such as one or more of aluminum oxide, silicon oxide, titanium oxide and magnesium oxide. The oxide layer 2 can also function as a partial base insulator, and therefore the thickness of the print function adjusting layer 3 can be reduced accordingly.
Preferably, the thickness of the oxide layer 2 is 50nm to 50 μm, preferably 10 to 50 μm, and more preferably 15 to 35 μm.
In the present invention, the material of the metal layer 1 may be various metal plates, such as aluminum plate, copper plate, iron plate, stainless steel plate, zinc plate or aluminum alloy plate, which are conventional in the art. In order to achieve physical properties of high thermal conductivity and light density and lower manufacturing cost, preferably, the metal layer 1 is made of an aluminum plate or an aluminum alloy plate.
In the present invention, the material of the printing function adjusting layer 3 may be a high thermal conductive organic material or a high thermal conductive inorganic material. Since the organic material is inferior to the inorganic material in heat transfer performance, in order to form the printing function adjusting layer 3 with good heat transfer performance, it is preferable that the printing function adjusting layer 3 is made of a high heat conductive inorganic material. In order to make the print-function adjustment layer 3 resistant to high temperature, it is preferable that the high thermal conductive inorganic material is an inorganic oxide, and more preferably, the high thermal conductive inorganic material is three or more of an oxide of phosphorus, an oxide of boron, an oxide of silicon, an oxide of vanadium, an oxide of bismuth, an oxide of barium, an oxide of copper, an oxide of zinc, an oxide of calcium, an oxide of potassium, and an oxide of sodium.
Preferably, the high thermal conductive inorganic material is three or more of an oxide of phosphorus, an oxide of boron, an oxide of silicon, an oxide of vanadium, an oxide of barium, and an oxide of zinc.
In the present invention, in the inorganic oxide containing at least three of the above oxides, the print function adjusting layer can withstand high temperatures by adjusting the mixing ratio thereof. In a preferred case, the composition and mixing ratio of the inorganic oxides are, for example: 40 to 70 wt% of an oxide of phosphorus, 10 to 30 wt% of an oxide of boron and 20 to 30 wt% of an oxide of silicon; 50 to 70 wt% of an oxide of phosphorus, 20 to 30 wt% of an oxide of vanadium and 10 to 20 wt% of an oxide of barium; 50 to 75 wt% boron oxide, 15 to 25 wt% barium oxide, and 10 to 25 wt% zinc oxide; 40 to 70% by weight of an oxide of silicon, 10 to 30% by weight of an oxide of barium and 20 to 30% by weight of an oxide of zinc; 40 to 65 wt% of an oxide of phosphorus, 20 to 40 wt% of an oxide of vanadium and 15 to 20 wt% of an oxide of zinc; 40 to 70 wt% of phosphorus oxide, 10 to 30 wt% of vanadium oxide and 20 to 30 wt% of zinc oxide.
Preferably, the thickness of the printing function adjusting layer 3 is 20 to 220 μm, preferably 30 to 200 μm, and more preferably 50 to 150 μm.
The sum of the thicknesses of the printing function adjusting layer 3 and the oxide layer 2 may be 10 μm or more, preferably 30 μm or more, more preferably 50 μm or more, still more preferably 80 μm or more, and most preferably 100-.
In the present invention, the printed conductive layer 4 may be formed of a mixture containing silver powder, resin, and glass frit.
The silver powder is preferably contained in an amount of 40 to 98 wt%, preferably 50 to 95 wt%, more preferably 60 to 90 wt%, based on the total weight of the mixture, and may be, for example, 60 wt%, 62 wt%, 65 wt%, 68 wt%, 70 wt%, 73 wt%, 75 wt%, 78 wt%, 80 wt%, 82 wt%, 85 wt%, 87 wt%, 90 wt%, or any value within a range defined by any two of these values.
In the present invention, the content of the resin is 1 to 25% by weight, preferably 2.5 to 20% by weight, more preferably 5 to 15% by weight, based on the total weight of the mixture, and may be, for example, 5% by weight, 6% by weight, 7% by weight, 8% by weight, 9% by weight, 10% by weight, 11% by weight, 12% by weight, 13% by weight, 14% by weight, 15% by weight, or any value in the range of any two of these values.
In the present invention, the content of the glass frit is 1 to 35% by weight, preferably 2.5 to 30% by weight, more preferably 5 to 25% by weight, based on the total weight of the mixture, and may be, for example, 5% by weight, 8% by weight, 10% by weight, 12% by weight, 15% by weight, 17% by weight, 20% by weight, 22% by weight, 25% by weight, or any two of these values.
In the present invention, the silver powder may be a nano silver powder or a micro silver powder. In the using process, in the case of preparing the printed conductive layer 4 by using a screen printing method, preferably, micron silver powder with relatively low price is selected; in the case of using an inkjet method to prepare the printed conductive layer 4, it is preferable to use nano silver powder.
In the present invention, the resin may be a resin conventional in the art, and may be, for example, polymethacrylate, ethylcellulose, nitrocellulose, polyethylene glycol, polyvinyl alcohol, polyvinylpyrrolidone, or the like. The resin can increase viscosity and leveling property in the printing process, so that the ink can be leveled uniformly on a printing stock and presents enough luster.
In the invention, the glass powder can be glass powder which is conventional in the field, for example, the glass powder can be low-melting-point glass powder, and the melting point of the glass powder can be 250-580 ℃.
Preferably, the thickness of the printed conductive layer 4 may be 10 to 120 μm, preferably 10 to 100 μm, and more preferably 25 to 50 μm.
In the present invention, the protective layer 5 serves to reduce the contact between the printed conductive layer 4 on the surface of the substrate and air, and to protect the substrate. The protective layer 5 may be formed of a material conventional in the art. Preferably, the protective layer 5 is formed of solder resist ink and character ink.
The invention also provides a method for preparing the LED substrate, which comprises the following steps:
(1) providing a metal substrate as a metal layer 1 and optionally forming an oxide layer 2 on the metal substrate;
(2) forming a printing function adjusting layer 3 on the plate obtained in the step (1), and then carrying out first heat treatment;
(3) forming a printed conductive layer 4 by printing on the heat-treated printing function adjusting layer 3, and then performing a second heat treatment;
(4) a protective layer 5 is formed on the heat-treated printed conductive layer 4.
According to the method of the present invention, in the step (1), the method of forming the oxide layer 2 may be one selected from the group consisting of a micro-arc oxidation method, an anodic oxidation method, an acid-base etching method, a hot water method, and a sol-gel method.
In the preferable case, the aluminum plate or the aluminum alloy plate is selected by a micro-arc oxidation method or an anodic oxidation method.
In the case of using a copper plate, a zinc plate, or a stainless steel plate, it is preferable to use a sol-gel method.
In the case of using an iron plate, preferably, an acid-base etching method or a solvent-gel method is used.
According to the method of the present invention, in the step (2), the method of forming the printing function adjusting layer 3 may be one selected from a spray coating method, a spin coating method, a brush coating method, a blade coating method, and a screen printing method. In order to enable the printing function adjusting layer 3 to have the effects of uniformity and good flatness, the method of forming the printing function adjusting layer 3 is preferably a screen printing method.
According to the method of the present invention, in the step (2), the operating conditions of the first heat treatment are not particularly limited so that the print-function adjusting layer 3 can be formed flatly. Preferably, the operating conditions of the first heat treatment include: the temperature is 400-600 ℃ and the time is 5-180 min, preferably 450-570 ℃ and the time is 15-40 min.
According to the method of the present invention, in the step (3), the method of forming the printed conductive layer 4 may be performed according to a printing method that is conventional in the art. Preferably, the method of forming the printed conductive layer 4 is an inkjet printing method or a screen printing method.
According to the method of the present invention, in the step (3), the operating conditions of the second heat treatment are not particularly limited so as to be able to cure the printed conductive layer 4. Preferably, the operating conditions of the second heat treatment comprise: the temperature is 300-500 ℃ and the time is 5-60 min, preferably, the temperature is 350-480 ℃ and the time is 10-30 min.
In a preferable case, in order to prevent the print-function adjusting layer 3 from softening, the first heat treatment temperature in step (2) is higher than the second heat treatment temperature in step (3).
In the present invention, each of the heat treatments in step (2) and step (3) may be carried out in an apparatus conventional in the art. In one embodiment, the first heat treatment process of step (2) and the second heat treatment process of step (3) are both performed in a muffle furnace.
According to the method of the present invention, in the step (4), the method of forming the protective layer 5 may be performed by an operation method that is conventional in the art. Preferably, the method of forming the protective layer 5 is a screen printing method.
According to the method of the present invention, the metal layer 1 may be subjected to a cleaning or polishing process before the oxide layer 2 or the print function adjusting layer 3 is formed on the metal layer 1. Specifically, the metal layer 1 plate may be cleaned using deionized water, ethanol, or acetone. The polishing treatment may be carried out according to a method conventionally used in the art.
The invention also provides an application of the LED substrate as a base material for illumination.
The present invention will be described in further detail by way of examples, but the scope of the present invention is not limited thereto.
Examples 1 to 8 are provided to illustrate the LED substrate and the method for manufacturing the same according to the present invention.
Example 1
Preparing an LED substrate as shown in fig. 1: an aluminum plate having a rectangular shape of 10cm × 20cm in size was prepared as the metal layer 1, the aluminum plate was washed with deionized water, and then placed in an anodic oxidation bath containing an oxalic acid solution (concentration of 0.2mol/L) for anodic oxidation treatment in a 10 ℃ thermostat bath for 240min to form an oxide layer 2 having a thickness of 20 μm.
5g of a mixture containing 60 wt% of phosphorus oxide, 20 wt% of boron oxide and 20 wt% of silicon oxide was printed with the functional adjustment layer material by a screen printing method, and then placed in a muffle furnace and heated at 500 ℃ for 40min to form a printed functional adjustment layer 3 having a thickness of 100 μm.
4g of a mixture containing 75% by weight of silver powder having a particle diameter of 3 μm, 10% by weight of polymethacrylate (number average molecular weight of 8000) and 15% by weight of low-melting glass frit (melting point of 300 ℃ C.) was printed with a conductive layer material by a screen printing method, and then placed in a muffle furnace and heated at 420 ℃ for 30min to form a printed conductive layer 4 having a thickness of 40 μm.
The protective layer 5 is formed on the surface of the printed conductive layer 4 by screen printing using solder resist ink and character ink.
The LED substrate shown in FIG. 1 was obtained, and the thermal conductivity of the LED substrate was measured to be 10W/m.K according to ASTM D5470 steady-state heat flow method.
Example 2
Preparing an LED substrate as shown in fig. 1: preparing a rectangular aluminum alloy sheet having dimensions of 10cm × 20cm as a metal layer 1, polishing the aluminum alloy sheet, and then subjecting the aluminum alloy sheet to a condition containing Na3PO4Performing micro-arc oxidation treatment in a temperature-controlled micro-arc oxidation tank with NaOH electrolyte (concentration of 10.0/2.0g/L) at a current density of 10.5A/dm2This is followed for 30min to form an oxide layer 2 of 15 μm thickness.
7.5g of a mixture containing 60% by weight of an oxide of phosphorus, 30% by weight of an oxide of vanadium and 10% by weight of an oxide of barium was printed with a functional adjustment layer material by a screen printing method, and then placed in a muffle furnace and heated at 450 ℃ for 25 minutes to form a printed functional adjustment layer 3 having a thickness of 150 μm.
5g of a mixture containing 10% by weight of silver nanoparticles (particle diameter of 30nm), 15% by weight of polyvinylpyrrolidone resin (number average molecular weight of 5000) and 75% by weight of ethanol was used for printing the conductive layer material by the inkjet printing method, and then placed in a muffle furnace and heated at 350 ℃ for 30min to form a printed conductive layer 4 having a thickness of 50 μm.
The protective layer 5 is formed on the surface of the printed conductive layer 4 by screen printing using solder resist ink and character ink.
The LED substrate shown in FIG. 1 was obtained and examined by the examination method of example 1, and the thermal conductivity of the LED substrate was found to be 8.5W/m.K.
Example 3
Preparing an LED substrate as shown in fig. 1: a rectangular aluminum plate having a size of 10cm by 20cm was prepared as the metal layer 1, the aluminum plate was washed with an ethanol solvent, and then placed in a bath containing Na3PO4The micro-arc oxidation treatment is carried out in a temperature-controlled micro-arc oxidation tank device of NaOH electrolyte (the concentration is 10.0/2.0g/L) at the current density of 10.5A/dm2This is followed for 90min to form an oxide layer 2 of 35 μm thickness.
2.5g of a mixture containing 55% by weight of boron oxide, 25% by weight of barium oxide and 20% by weight of zinc oxide was printed with the functional adjustment layer material by screen printing, and then placed in a muffle furnace and heated at 570 ℃ for 35min to form a printed functional adjustment layer 3 of 50 μm thickness.
2.5g of a mixture containing 30 wt% of silver nanopowder, 20 wt% of polyvinylpyrrolidone and 50 wt% of ethanol was printed with the conductive layer material by ink-jet printing, and then placed in a muffle furnace and heated at 480 ℃ for 15min to form a printed conductive layer 4 having a thickness of 25 μm.
The protective layer 5 is formed on the surface of the printed conductive layer 4 by screen printing using solder resist ink and character ink.
The LED substrate shown in FIG. 1 was obtained and tested by the testing method of example 1, and the thermal conductivity of the LED substrate was found to be 13W/m.K.
Example 4
Preparing an LED substrate as shown in fig. 1: a rectangular copper plate having a size of 10cm × 20cm was prepared as the metal layer 1, the copper plate was washed with an ethanol solvent, and then immersed in a silica sol solution to be sol-gel treated for 5min to form an oxide layer 2 having a thickness of 10 μm.
3.5g of a mixture containing 50% by weight of an oxide of silicon, 30% by weight of an oxide of barium and 20% by weight of an oxide of zinc was sprayed with a functional adjustment layer material by a spray method, and then placed in a muffle furnace and heated at 550 ℃ for 40min to form a printed functional adjustment layer 3 having a thickness of 70 μm.
4g of a mixture containing 70 wt% of a silver powder having a micron size, 10 wt% of ethyl cellulose and 20 wt% of a glass powder having a low melting point was printed with a conductive layer material by a screen printing method, and then placed in a muffle furnace and heated at 450 ℃ for 25min to form a printed conductive layer 4 having a thickness of 40 μm.
The protective layer 5 is formed on the surface of the printed conductive layer 4 by screen printing using solder resist ink and character ink.
The LED substrate shown in FIG. 1 was obtained and tested by the testing method of example 1, and the thermal conductivity of the LED substrate was found to be 12W/m.K.
Example 5
Preparing an LED substrate as shown in fig. 1: preparing a rectangular iron plate with the size of 10cm multiplied by 20cm as a metal layer 1, washing the iron plate by using deionized water, and then putting the iron plate into a concentrated nitric acid solution to carry out acid-base corrosion treatment for 10min so as to form an oxide layer 2 with the thickness of 50 nm.
1.5g of a mixture containing 40 wt% of an oxide of phosphorus, 40 wt% of an oxide of vanadium and 20 wt% of an oxide of zinc was coated with a functional adjustment layer material by a spin coating method, and then placed in a muffle furnace and heated at 600 ℃ for 15min to form a printed functional adjustment layer 3 having a thickness of 30 μm.
1g of a mixture containing 95 wt% of silver nanopowder, 2.5 wt% of polyethylene glycol and 2.5 wt% of low melting point glass frit was printed with a conductive layer material by screen printing, and then placed in a muffle furnace and heated at 500 ℃ for 10min to form a printed conductive layer 4 having a thickness of 10 μm.
The protective layer 5 is formed on the surface of the printed conductive layer 4 by screen printing using solder resist ink and character ink.
The LED substrate shown in FIG. 1 was obtained and examined by the examination method of example 1, and the thermal conductivity of the LED substrate was found to be 20W/m.K.
Example 6
Preparing an LED substrate as shown in fig. 1: a rectangular aluminum plate having a size of 10cm × 20cm was prepared as the metal layer 1, the aluminum plate was washed with deionized water, and then the iron plate was put into hot water at 75 ℃ for hot water treatment for 25min to form an oxide layer 2 having a thickness of 200 nm.
10g of a mixture containing 40 wt% of an oxide of phosphorus, 30 wt% of an oxide of vanadium and 30 wt% of an oxide of zinc was applied to the functional adjustment layer material by a brush coating method, and then placed in a muffle furnace and heated at 400 ℃ for 180min to form a printing function adjustment layer 3 having a thickness of 200 μm.
10g of a mixture containing 50 wt% of silver nanopowder, 20 wt% of nitrocellulose and 30 wt% of low melting point glass frit was printed with a conductive layer material by screen printing, and then placed in a muffle furnace and heated at 300 ℃ for 60min to form a printed conductive layer 4 having a thickness of 100 μm.
The protective layer 5 is formed on the surface of the printed conductive layer 4 by screen printing using solder resist ink and character ink.
The LED substrate shown in FIG. 1 was obtained and tested by the testing method of example 1, and the thermal conductivity of the LED substrate was found to be 10W/m.K.
Example 7
Preparing an LED substrate as shown in fig. 1: a rectangular stainless steel plate having a size of 10cm × 20cm was prepared as the metal layer 1, the stainless steel plate was cleaned using an ethanol solvent, and then immersed in a silica sol solution to be sol-gel treated for 5min to form an oxide layer 2 having a thickness of 10 μm.
1.5g of a mixture containing 40 wt% of an oxide of phosphorus, 40 wt% of an oxide of vanadium and 20 wt% of an oxide of zinc was coated with a functional adjustment layer material by a spin coating method, and then placed in a muffle furnace and heated at 600 ℃ for 5 minutes to form a printed functional adjustment layer 3 having a thickness of 30 μm.
1g of a mixture containing 95 wt% of silver nanopowder, 2.5 wt% of polyvinyl alcohol and 2.5 wt% of low melting point glass frit was printed with a conductive layer material by screen printing, and then placed in a muffle furnace and heated at 500 ℃ for 5min to form a printed conductive layer 4 having a thickness of 10 μm.
The protective layer 5 is formed on the surface of the printed conductive layer 4 by screen printing using solder resist ink and character ink.
The LED substrate shown in FIG. 1 was obtained and examined by the examination method of example 1, and the thermal conductivity of the LED substrate was found to be 20W/m.K.
Example 8
The LED substrate obtained was examined by the examination method of example 1, except that the oxide layer was not formed, and the thermal conductivity was measured to be 15W/m.K.
Comparative example 1
The thermally conductive insulating layer is formed using a conventional LED substrate, i.e., using a conventional epoxy-bonded alumina particle method, and the conductive layer is formed using a conventional etching method. The thermal conductivity was measured to be 1W/m.K.
Comparative example 2
A printing function adjusting layer was formed at 420 ℃ according to the method of example 1, except that no oxide layer was formed, and 75 wt% of a silver powder having a diameter of micrometers and 25 wt% of a glass frit having a low melting point were used. The substrate has no insulating property and cannot meet the basic requirements of the LED substrate.
Comparative example 3
The method of example 1 was followed except that no oxide layer was formed and only a micron silver powder was used to form a printed conductive layer at 420 ℃. The substrate has no insulating property and cannot meet the basic requirements of the LED substrate.
Comparative example 4
The method of embodiment 1 is followed, except that an oxide layer is not formed, and a conductive layer is formed by a conventional etching method. The method needs to sputter metal nickel or chromium as an intermediate layer and then electroplate to form thicker copper foil, and has complex process and high cost.
It is understood from the data of comparative examples 1 to 8 and comparative examples 1 to 4 that the heat dissipation property of the LED substrate is improved by using the high thermal conductive inorganic material in the process of forming the printing function adjusting layer, and the heat dissipation property can be 8.5W/m · K or more.
The preferred embodiments of the present invention have been described above in detail, but the present invention is not limited thereto. Within the scope of the technical idea of the invention, many simple modifications can be made to the technical solution of the invention, including combinations of various technical features in any other suitable way, and these simple modifications and combinations should also be regarded as the disclosure of the invention, and all fall within the scope of the invention.
Claims (17)
1. The LED substrate is characterized by comprising a metal layer (1), a printing function adjusting layer (3), a printing conductive layer (4) and a protective layer (5) which are sequentially stacked from bottom to top;
the printing function adjusting layer (3) is made of a high-heat-conductivity inorganic material;
the high heat-conducting inorganic material is three or more than three of oxides of phosphorus, boron, silicon, vanadium, bismuth, barium, copper, zinc, calcium, potassium and sodium.
2. The LED substrate according to claim 1, further comprising an oxide layer (2) between the metal layer (1) and the print function adjusting layer (3).
3. The LED substrate according to claim 2, wherein the oxide layer (2) is made of one or more of aluminum oxide, silicon oxide, titanium oxide and magnesium oxide.
4. The LED substrate according to any one of claims 1 to 3, wherein the metal layer (1) is made of aluminum, copper, iron, stainless steel, zinc or aluminum alloy.
5. The LED substrate according to any of claims 1-3, wherein the printed conductive layer (4) is formed from a mixture comprising silver powder, resin and glass frit.
6. The LED substrate according to any of claims 1-3, wherein the protective layer (5) is formed from solder resist ink and character ink.
7. A method of preparing the LED substrate of any one of claims 1-6, comprising the steps of:
(1) providing a metal substrate as a metal layer (1);
(2) forming a printing function adjusting layer (3) on the plate obtained in the step (1), and then carrying out first heat treatment;
(3) forming a printed conductive layer (4) by printing on the heat-treated printing function adjusting layer (3), and then performing a second heat treatment;
(4) a protective layer (5) is formed on the thermally treated printed conductive layer (4).
8. The method according to claim 7, wherein in step (1) an oxide layer (2) is formed on the metal substrate.
9. The method according to claim 8, wherein, in the step (1), the method of forming the oxide layer (2) is selected from one of a micro-arc oxidation method, an anodic oxidation method, an acid-base etching method, a hot water method, and a sol-gel method.
10. The method according to claim 7, wherein in the step (2), the method of forming the print-function adjusting layer (3) is one selected from a spray method, a spin coating method, a brush coating method, a blade coating method, and a screen printing method.
11. The method of claim 7, wherein, in step (2), the operating conditions of the first thermal treatment comprise: the temperature is 400-600 ℃, and the time is 5-180 min.
12. The method of claim 11, wherein the operating conditions of the first thermal treatment comprise: the temperature is 450-570 ℃, and the time is 15-40 min.
13. The method according to claim 7, wherein, in the step (3), the method of forming the printed conductive layer (4) is an inkjet printing method or a screen printing method.
14. The method of claim 7, wherein, in step (3), the operating conditions of the second heat treatment comprise: the temperature is 300-500 ℃ and the time is 5-60 min.
15. The method of claim 14, wherein the operating conditions of the second thermal treatment comprise: the temperature is 350-480 ℃, and the time is 10-30 min.
16. The method according to claim 7, wherein, in the step (4), the method of forming the protective layer (5) is a screen printing method.
17. Use of the LED substrate according to any one of claims 1 to 6 as a base material for lighting.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200828613A (en) * | 2006-12-18 | 2008-07-01 | Delta Electronics Inc | Electroluminescent module |
| CN101287335A (en) * | 2007-04-12 | 2008-10-15 | 环宇真空科技股份有限公司 | Highly heat conductive circuit base board |
| KR20100070820A (en) * | 2008-12-18 | 2010-06-28 | 전자부품연구원 | Resonant cavity light emitting diode package with improved heat emission efficiency and method of manufacturing the same |
| CN102881813A (en) * | 2012-09-27 | 2013-01-16 | 广东宏泰照明科技有限公司 | Radiator panel manufacture method |
| CN104813493A (en) * | 2012-11-27 | 2015-07-29 | 西铁城电子株式会社 | Mounting substrate and light emitting apparatus using mounting substrate |
| CN104981094A (en) * | 2014-04-08 | 2015-10-14 | 佳胜科技股份有限公司 | Composite substrate and porous insulating layer for high frequency applications |
| JP2016115745A (en) * | 2014-12-12 | 2016-06-23 | 東芝ライテック株式会社 | Substrate for light-emitting device and light-emitting device |
| CN106356343A (en) * | 2015-07-17 | 2017-01-25 | 株式会社神户制钢所 | Heat dissipation substrate, heat dissipation device, and manufacturing method of heat dissipation substrate |
-
2017
- 2017-05-09 CN CN201710320975.6A patent/CN108878627B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200828613A (en) * | 2006-12-18 | 2008-07-01 | Delta Electronics Inc | Electroluminescent module |
| CN101287335A (en) * | 2007-04-12 | 2008-10-15 | 环宇真空科技股份有限公司 | Highly heat conductive circuit base board |
| KR20100070820A (en) * | 2008-12-18 | 2010-06-28 | 전자부품연구원 | Resonant cavity light emitting diode package with improved heat emission efficiency and method of manufacturing the same |
| CN102881813A (en) * | 2012-09-27 | 2013-01-16 | 广东宏泰照明科技有限公司 | Radiator panel manufacture method |
| CN104813493A (en) * | 2012-11-27 | 2015-07-29 | 西铁城电子株式会社 | Mounting substrate and light emitting apparatus using mounting substrate |
| CN104981094A (en) * | 2014-04-08 | 2015-10-14 | 佳胜科技股份有限公司 | Composite substrate and porous insulating layer for high frequency applications |
| JP2016115745A (en) * | 2014-12-12 | 2016-06-23 | 東芝ライテック株式会社 | Substrate for light-emitting device and light-emitting device |
| CN106356343A (en) * | 2015-07-17 | 2017-01-25 | 株式会社神户制钢所 | Heat dissipation substrate, heat dissipation device, and manufacturing method of heat dissipation substrate |
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