CN109557444A - The test method of wafer scale electronic building brick - Google Patents
The test method of wafer scale electronic building brick Download PDFInfo
- Publication number
- CN109557444A CN109557444A CN201710879888.4A CN201710879888A CN109557444A CN 109557444 A CN109557444 A CN 109557444A CN 201710879888 A CN201710879888 A CN 201710879888A CN 109557444 A CN109557444 A CN 109557444A
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- China
- Prior art keywords
- probe
- perforation
- wafer
- building brick
- electronic building
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
A kind of test method of wafer scale electronic building brick has multiple wafers for being electrically connected with contact portion suitable for testing one, and includes the preliminary step of one test device of a preparation and the detecting step that one is tested using the test device.The test device includes one with multiple probe cards for being spaced each other perforation parallel and in penetration state and multiple probes being respectively positioned in the perforation, and each perforation defines the axis extended along its axle center, and the probe is arranged along the axis respectively.Each perforation is the aperture in single size, and at least there are two the distances between the axis of adjacent perforated, equal to the spacing for being electrically connected with minimum adjacent the two in contact portion.When being tested, the portion in electrical contact contacts with the probe respectively and forms electrical connection.
Description
Technical field
The present invention relates to a kind of test methods, more particularly to a kind of test method of wafer scale electronic building brick.
Background technique
Electronic chip needs to carry out the test of every electrical property efficiency using test device, before assembling or shipment to ensure
The function of the electronic building brick is normal and can operate really.Currently in order to reducing body in response to the demand of electronic product in the market
Accumulating and improving precision is inevitable trend, therefore the density of electronic building brick and circuit on electronic chip joined together is all
It is higher and higher, or even electronic building brick spacing must be reached in 0.5 millimeter (mm) " wafer scale Scale Package below on processing procedure
(Wafer Level Chip Scale Package) ", is just accorded with the demands of the market really.And it is directed to wafer scale Scale Package
Electronic chip when being tested, also must be in response to being just able to detect institute really in test device and test method
The function of electronic chip is made.
Refering to fig. 1, it is a kind of existing test device 1, with pedestal 11 made of metal and multiple is set to this comprising one
Spring probe 12 in pedestal 11.It is electrically connected through the spring probe 12 with a test suite 100 formation, it can be electrically to lead
Whether logical, functional test is carried out to the test suite 100.Since the pedestal 11 is to utilize metal material pair made by metal
Shielding electromagnetic waves property can make shielding action of each spring probe 12 by the pedestal 11, prevent the spring probe
12 mutual interference, improve test performance whereby.
However, the pedestal 11 includes multiple for dividing in order to positively locate the spring probe 12 in the pedestal 11
The perforation 111 of the spring probe 12 is not accommodated, but each perforation 111 is to limit corresponding spring by radial width variation
Probe 12, and the width of the perforation 111 changes design, but also the spacing of the spring probe 12, must cooperate the perforation
The diameter of 111 widest portions is wide, can not further reduce, thus affects the test limits of the test device 1, it is difficult to match synthetic
The testing requirement of the electronic chip of circle grade Scale Package.
With additional reference to Fig. 2, when assembling each spring probe 12, because the width variation of each perforation 111 is set
Meter, it is more difficult to be processed wherein, therefore be usually that multiple dead rings 19 are first arranged on the spring probe 12, just by the bullet
Spring probe 12 is set in corresponding perforation 111.However, it is also contemplated that the survey of the electronic chip of cooperation wafer scale Scale Package
The scale of examination demand, the spring probe 12 and the perforation 111 certainly will be all fairly small, therefore is arranged the essence of the dead ring 19
Spy's industry is also relatively difficult to implement, and the technical level of related process thus improves, and also influences yield when manufacture.
Summary of the invention
The purpose of the present invention is to provide a kind of test sides of wafer scale electronic building brick for being able to cooperation precision measurement demand
Method.
The test method of wafer scale electronic building brick of the present invention, is surveyed suitable for being formed by electronic building brick to a wafer
There is a baseplate part and multiple be set on the baseplate part to be electrically connected with contact portion for examination, the wafer.It is described to be electrically connected with minimum in contact portion
Both adjacent spacing is less than or equal to 0.5 millimeter of wafer-level packaging scale, and the test method of the electronic building brick includes one pre-
The detecting step that the wafer is tested using the test device for the preliminary step of a test device and one.
In the preliminary step, which includes one with multiple perforation for being spaced each other in parallel and be in penetration state
Probe card and multiple probes being respectively positioned in the perforation.The probe card is made by metal material.Each perforation is fixed
One axis extended along its axle center of justice, the probe are arranged along the axis respectively, and each perforation is the hole in single size
Diameter, at least there are two the distances between the axis of adjacent perforated in the perforation, are electrically connected with minimum adjacent two in contact portion equal to described
The spacing of person.
In the detecting step, the wafer is tested using the test device, the portion in electrical contact respectively with institute
It states probe contact and forms electrical connection.
The object of the invention to solve the technical problems also can be used following technical measures and further realize.
Preferably, the test method of aforementioned wafer scale electronic building brick, wherein the axis of wantonly two adjacent perforated in the perforation
Between minimum range be less than or equal to 0.5 millimeter.
Preferably, the test method of aforementioned wafer scale electronic building brick, wherein the test device further includes multiple is respectively set
In the insulating layer for being used to position the probe in the perforation.
Preferably, the test method of aforementioned wafer scale electronic building brick, wherein each probe has a lateral circle surface, and
Two are located at the needle end part of opposite end, and each insulating layer is the complete lateral circle surface for coating corresponding probe, but is not coated
The needle end part.
Preferably, the test method of aforementioned wafer scale electronic building brick, wherein each probe has a lateral circle surface, and
Two are located at the needle end part of opposite end, each insulating layer is with the lateral circle surface localized contact of corresponding probe to position the spy
Needle, and make to form air gap between the probe and the probe card.
Preferably, the test method of aforementioned wafer scale electronic building brick, wherein the probe card has a upper pedestal and one
Lower base, the perforation are through the upper pedestal and the lower base.
Preferably, the test method of aforementioned wafer scale electronic building brick, wherein also there is the probe card one to be connected on this
The guide member of pedestal, the guide member and the upper pedestal surround out one for accommodating the accommodating space of the wafer jointly.
Beneficial effect of the invention is: because the probe card is with made by metal material, and each perforation is all
In the aperture of single size, therefore using the test device come when testing the wafer, as long as the wafer scale envelope that cooperation is described
Scale is filled, using the lesser test device in the aperture, by the design of the perforation, that is, is able to cooperate between shortening the probe
Distance carry out that scale is lesser accurate to be surveyed so that the probe is able to cooperate the scale for being electrically connected with contact portion of the wafer
Examination demand.
Detailed description of the invention
Fig. 1 is a cross-sectional view, illustrates an existing test device and the test limits of the test device；
The case where Fig. 2 is a schematic diagram, illustrates the wherein probe for assembling the test device；
Fig. 3 is a flow chart, illustrates an embodiment of the test method of wafer scale electronic building brick of the present invention；
Fig. 4 is a cross-sectional view, and auxiliary Fig. 3 illustrates the survey used in a preliminary step of the embodiment and a detecting step
Trial assembly is set；
The effect of Fig. 5 is a partial enlarged view, illustrates the embodiment；
Fig. 6 is a partial enlarged view, illustrates another state sample implementation of the test device；And
Fig. 7 is a cross-sectional view, illustrates the test device for being able to test the electronic building brick being partitioned on a wafer.
Specific embodiment
The following describes the present invention in detail with reference to the accompanying drawings and embodiments.
Refering to Fig. 3,4, an embodiment of the test method of wafer scale electronic building brick of the present invention is suitable for on a wafer 9
It is formed by electronic building brick to be tested, which has a baseplate part 91 and multiple electrical property being set on the baseplate part 91
Contact portion 92.It is described to be electrically connected in contact portion 92 minimum both adjacent spacing and be less than or equal to wafer-level packaging scale, and the crystalline substance
Circle grade package dimensions are 0.5 millimeter.The embodiment includes the preliminary step 31 and a use of a prepared test device 4
The detecting step 32 that the test device 4 tests the wafer 9.
In the preliminary step 31, which is spaced each other parallel and wearing in penetration state with multiple including one
The probe card 41 in hole 411, multiple probes 42 being respectively positioned in the perforation 411 and multiple it is respectively arranged at the perforation
It is used to position the insulating layer 43 of the probe 42 in 411.The probe card 41 has a upper pedestal 401 and a lower base
402, the perforation 411 is through the upper pedestal 401 and the lower base 402.Each perforation defines one and extends along its axle center
Axis L, the probe 42 respectively along the axis L be arranged.
Wherein, due to the aperture that each perforation 411 is in single size, therefore when adjacent perforated 411 is closely arranged, positioning
The spacing of the probe 42 in the perforation 411 is only no better than twice under the premise of hole wall can be thinned as far as possible
Pore radius, can effectively reduce the detection scale that the test device 4 is able to cooperate whereby.At least two in the perforation 411
Distance d between a 411 axis L of adjacent perforated, equal to the spacing for being electrically connected with minimum adjacent the two in contact portion 92, so that positioning
Probe 42 in the perforation 411 is able to be contacted really to be electrically connected with contact portion 92 described in the manufacture of wafer-level packaging scale.Cause
This, in order to cooperate wafer-level packaging scale, the minimum range in the perforation 411 between the axis L of wantonly two adjacent perforated 411 is less than
Equal to 0.5 millimeter, so that the smallest distance is also able to reach 0.5 millimeter of scale between adjacent probe 42.
In the detecting step 32, described on the wafer 9 is electrically connected with contact portion 92, is able to contact with the probe 42 respectively
And the wafer test substrate 5 for forming electrical connection, and being just electrically connected originally with the probe 42 with unification, it detects on the wafer 9
The function of being electrically connected with contact portion 92, it is ensured that it is good that described on the wafer 9, which is electrically connected with contact portion 92 to be formed by electronic building brick,
Product.It should be particularly noted that, since the probe card 41 of the test device 4 is made of to utilize pair of metal material with metal material
In shielding electromagnetic waves property, the case where interfering with each other when the probe 42 transmits electric signal can be reduced really, effectively improves this
The detection performance of test device 4.
Refering to Fig. 5 and cooperate Fig. 4, each probe 42 is located at the needle end of opposite end with a lateral circle surface 421 and two
Portion 422, and each insulating layer 43 is the complete lateral circle surface 421 for coating corresponding probe 42, but does not coat the needle end part 422.It is logical
The insulating layer 43 is crossed, the electric signal transmitted in each probe 42 can be completely cut off, electric signal is avoided to be made via with metal material
Probe card 41 and influence the electric signals of other probes 42.And the insulating layer 43 does not coat the needle end part 422, so that institute
It states probe 42 to remain to be electrically connected with contact portion 92 described in contact really, avoids the performance for influencing detection.It is worth illustrating, by
The design in single aperture is all presented in the perforation 411, therefore is conducive to before assembling the probe 42, in advance in the perforation
The insulating layer 43 is filled in 411, compared to it is as shown in Figure 2 be arranged the processing of multiple dead rings 19 for, can effectively letter
Change processing procedure, manufacturing yield is also with promotion.
In addition, general test device 4, the probe 42, which can be divided into, provides three kinds of power supply, transmitting signals, ground connection function
It can, that is to say, that in the probe 42, having at least one, at least one is grounded as the purposes of power supply is provided, remaining
Then as the transmitting of signal.Due to the probe 42 as ground connection purposes, need to directly be contacted with the probe card 41 to generate ground connection and make
With.And the probe 42 is for when providing power supply, then needing quite good insulation effect to occur to avoid the situation of short circuit, it is described
Insulating layer 43 can also coat completely provides the lateral circle surface 421 of the probe 42 of power supply, occurs to avoid the situation of short circuit.
Refering to Fig. 6, for another kenel of the test device 4, with the form shown as shown graphically in fig 5 the difference is that: it is each
Insulating layer 43 is and to make the probe 42 and the probe with 421 localized contact of lateral circle surface of corresponding probe 42 to position the probe 42
Air gap 8 is formed between card 41.The design as depicted in Fig. 6 remains to reach and shows design as shown graphically in fig 5 although being formed with air gap 8
Equivalent efficacy, in addition to this, the size of the air gap 8 can be used to adjust the impedance matching of each probe 42, through the probe card
41 each perforation 411 is essentially the design of the straight hole in single aperture, can more be easily adjusted the impedance of each probe 42
Match, adjustment acts and enables impedance matching more precisely and stable whereby, effectively improves the test performance of the test device 4.
Refering to Fig. 7, when needing to test the wafer stripping and slicing 9 ' for being divided into particular size, the spy of the test device 4
Needle card 41 further includes a guide member 409 being set on the upper pedestal 401, the kenel of the wafer stripping and slicing 9 ' is able to cooperate, with this
Upper pedestal 401 is around out one for carrying the accommodating space 400 of the baseplate part 91.When the size of the wafer stripping and slicing 9 ' is different
When, then the different guide member 409 of size can be replaced, the size of the accommodating space 400 is enable to cooperate wafer stripping and slicing 9 ' to be measured.
Since the probe 42 is directed towards the accommodating space 400, and position be respectively correspond it is described be electrically connected with contact portion 92, when the wafer is cut
Block 9 ' is placed in the accommodating space 400, then can impose press power to the wafer stripping and slicing 9 ' with unification compression module 6, it is ensured that institute
It states and is electrically connected with contact portion 92 and can contact the probe 42 really.
Claims (7)
1. a kind of test method of wafer scale electronic building brick, suitable for testing to being formed by electronic building brick on a wafer,
The wafer has a baseplate part and multiple contact portions that are electrically connected with being set on the baseplate part, described to be electrically connected with minimum in contact portion
Both adjacent spacing is less than or equal to 0.5 millimeter of wafer-level packaging scale；It is characterized by: the test method of the electronic building brick
Include:
One preliminary step, one test device of preparation, which, which includes one, has and multiple are spaced each other parallel and are in
The probe card of the perforation of penetration state and multiple probes being respectively positioned in the perforation, the probe card are with metal material institute
It is made, each perforation defines the axis extended along its axle center, and the probe is arranged along the axis respectively, each is worn
Hole is the aperture in single size, and at least there are two the distances between the axis of adjacent perforated in the perforation, is equal to the electrical property
The spacing of minimum adjacent the two in contact portion；And
One detecting step tests the wafer using the test device, the portion in electrical contact respectively with the probe
It contacts and forms electrical connection.
2. the test method of wafer scale electronic building brick according to claim 1, it is characterised in that: wantonly two is adjacent in the perforation
Minimum range between the axis of perforation is less than or equal to 0.5 millimeter.
3. the test method of wafer scale electronic building brick according to claim 1, it is characterised in that: the test device further includes more
A be respectively arranged in the perforation and the insulating layer for being used to position the probe.
4. the test method of wafer scale electronic building brick according to claim 3, it is characterised in that: each probe has one
Lateral circle surface and two are located at the needle end part of opposite end, and each insulating layer is the complete lateral circle surface for coating corresponding probe,
But the needle end part is not coated.
5. the test method of wafer scale electronic building brick according to claim 3, it is characterised in that: each probe has one
Lateral circle surface and two are located at the needle end part of opposite end, each insulating layer is the lateral circle surface localized contact with corresponding probe
To position the probe, and make to form air gap between the probe and the probe card.
6. the test method of wafer scale electronic building brick according to claim 1, it is characterised in that: the probe card has on one
Pedestal and a lower base, the perforation are through the upper pedestal and the lower base.
7. the test method of wafer scale electronic building brick according to claim 6, it is characterised in that: the probe card also has one
It is connected to the guide member of the upper pedestal, the guide member and the upper pedestal surround out an accommodating sky for accommodating the wafer jointly
Between.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710879888.4A CN109557444A (en) | 2017-09-26 | 2017-09-26 | The test method of wafer scale electronic building brick |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710879888.4A CN109557444A (en) | 2017-09-26 | 2017-09-26 | The test method of wafer scale electronic building brick |
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| Publication Number | Publication Date |
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| CN109557444A true CN109557444A (en) | 2019-04-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710879888.4A Pending CN109557444A (en) | 2017-09-26 | 2017-09-26 | The test method of wafer scale electronic building brick |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112305278A (en) * | 2020-10-09 | 2021-02-02 | 渭南高新区木王科技有限公司 | Preparation method of small-spacing test probe module |
| CN112305279A (en) * | 2020-10-09 | 2021-02-02 | 渭南高新区木王科技有限公司 | Booth is apart from test probe module |
| CN112698057A (en) * | 2019-10-23 | 2021-04-23 | 高天星 | Conduction device for electrical property test |
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| CN207263851U (en) * | 2017-09-26 | 2018-04-20 | 颖崴科技股份有限公司 | Electronic assembly test device and its system |
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Patent Citations (6)
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|---|---|---|---|---|
| CN101256201A (en) * | 2007-02-27 | 2008-09-03 | 南茂科技股份有限公司 | Probe head module group capable of detecting multiple positions |
| CN101431039A (en) * | 2007-11-08 | 2009-05-13 | 久元电子股份有限公司 | Wafer detection system |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112698057A (en) * | 2019-10-23 | 2021-04-23 | 高天星 | Conduction device for electrical property test |
| CN112305278A (en) * | 2020-10-09 | 2021-02-02 | 渭南高新区木王科技有限公司 | Preparation method of small-spacing test probe module |
| CN112305279A (en) * | 2020-10-09 | 2021-02-02 | 渭南高新区木王科技有限公司 | Booth is apart from test probe module |
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