CN109545940A - It is a kind of to carry on the back out light red light chips and preparation method thereof - Google Patents
It is a kind of to carry on the back out light red light chips and preparation method thereof Download PDFInfo
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- CN109545940A CN109545940A CN201811406142.2A CN201811406142A CN109545940A CN 109545940 A CN109545940 A CN 109545940A CN 201811406142 A CN201811406142 A CN 201811406142A CN 109545940 A CN109545940 A CN 109545940A
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- 238000002360 preparation method Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 56
- 239000010980 sapphire Substances 0.000 claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 claims abstract description 32
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 22
- 238000004528 spin coating Methods 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 9
- 238000000227 grinding Methods 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000007731 hot pressing Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910009815 Ti3O5 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The present invention relates to chip manufacturing technical fields, it specifically discloses and a kind of carries on the back out light red light chips, wherein, the light red light chips of carrying on the back out include: sapphire substrate, transparent bonded layer, light emitting epitaxial layer and electrode, one surface of the sapphire substrate is connect by the transparent bonded layer with a surface of the light emitting epitaxial layer, the surface away from the sapphire substrate of the light emitting epitaxial layer connects the electrode, the light emitting epitaxial layer can issue feux rouges, and the feux rouges that the light emitting epitaxial layer issues can be projected through the transparent bonded layer by the sapphire substrate.The invention also discloses a kind of production methods for carrying on the back out light red light chips.It is provided by the invention carry on the back out light red light chips and pass through will issue the light emitting epitaxial layer of feux rouges and be bonded with sapphire substrate by transparent bonded layer, the feux rouges that light emitting epitaxial layer issues can be projected through transparent bonded layer by sapphire substrate, it thus obtains and carries on the back out light red light chips, realize the flip-chip packaged of red light chips.
Description
Technical field
The present invention relates to chip manufacturing technical field more particularly to a kind of carry on the back out light red light chips and carry on the back out light red light chips
Production method.
Background technique
Red-light LED because of epitaxial growth on gaas substrates the reason of, can only use vertical structure scheme, be gone out by upper surface
Light, reversed polarity feux rouges are transferred to epitaxial thin-film layer in silicon or germanium substrate, and brightness has a promotion by a relatively large margin, but according to
It is so that light is gone out by upper surface.
As the indoor display screen matrix spacing of maturation and high definition of GaN base blue green light flip chip technology (fct) is smaller and smaller,
When below Pith 0.6mm, traditional bonding wire packaging technology can not be used, and Flip-Chip Using is imperative.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, provides and a kind of carry on the back out light red light chips
And the production method for carrying on the back out light red light chips, to solve the problems of the prior art.
As the first aspect of the invention, provides and a kind of carry on the back out light red light chips, wherein is described to carry on the back out light red light chips
It include: sapphire substrate, transparent bonded layer, light emitting epitaxial layer and electrode, a surface of the sapphire substrate passes through described
Bright bonded layer is connect with a surface of the light emitting epitaxial layer, the surface away from the sapphire substrate of the light emitting epitaxial layer
The electrode is connected, the light emitting epitaxial layer can issue feux rouges, and the feux rouges that the light emitting epitaxial layer issues can penetrate institute
Transparent bonded layer is stated to be projected by the sapphire substrate.
Preferably, the light red light chips of carrying on the back out further include reflective isolating layer, and the reflective isolating layer is arranged in the hair
The side of light epitaxial layer and the light emitting epitaxial layer deviate from the surface of the sapphire substrate.
Preferably, the electrode includes positive electrode and negative electrode.
Preferably, the light emitting epitaxial layer include N-AlGaInP layers, MQW quantum well layer and P-GaP layers, the MQW quantum
Well layer is positioned at described between N-AlGaInP layers and P-GaP layer, and described P-GaP layers connect with the transparent bonded layer, the positive electricity
Pole is connect through the N-AlGaInP layers and MQW quantum well layer with described P-GaP layers, described N-AlGaInP layers and the negative electricity
Pole connection.
As the second aspect of the present invention, a kind of production method for carrying on the back out light red light chips is provided, wherein described to carry on the back out light
The production method of red light chips includes:
GaAs substrate is provided, grows light emitting epitaxial layer on the GaAs substrate；
Sapphire substrate is provided, transparent bonded layer is coated on the sapphire substrate；
The sapphire substrates are bonded by the transparent bonded layer with the light emitting epitaxial layer；
Remove the GaAs substrate；
Electrode pad is made, the electrode pad is connect with the light emitting epitaxial layer；
Cutting, acquisition is independent to carry on the back out light red light chips.
Preferably, the production method for carrying on the back out light red light chips further includes the steps that in the production electrode pad advance
Capable:
Reflection is made on the surface of the side of the light emitting epitaxial layer and the light emitting epitaxial layer away from the sapphire substrate
Insulating layer.
Preferably, the offer GaAs substrate, growing light emitting epitaxial layer on the GaAs substrate includes:
GaAs substrate is provided；
N-AlGaInP layers, MQW quantum well layer and P-GaP layers are successively grown on the GaAs substrate.
It is preferably, described that transparent bonded layer is coated on the sapphire substrate includes the spin coating on the sapphire substrate
BCB is bonded glue, and the revolving speed of spin coating, between 2000 revs/min ~ 4000 revs/min, the thickness of the BCB bonding glue of spin coating is 5
Between um ~ 10um.
Preferably, described that the sapphire substrates are passed through into the transparent bonded layer and the light emitting epitaxial layer key including logical
It crosses vacuum hotpressing bonding apparatus and is bonded the transparent bonded layer with the light emitting epitaxial layer.
Preferably, the production method for carrying on the back out light red light chips further include the steps that carrying out before the cutting by institute
It states sapphire substrate to be ground, and the thickness of the sapphire substrate after grinding is between 100 um ~ 150um.
It is provided by the invention to carry on the back out light red light chips, by the light emitting epitaxial layer and sapphire substrate that will issue feux rouges
It is bonded by transparent bonded layer, the feux rouges that light emitting epitaxial layer issues can be penetrated through transparent bonded layer by sapphire substrate
Out, it thus obtains and carries on the back out light red light chips, realize the flip-chip packaged of red light chips.
Detailed description of the invention
The drawings are intended to provide a further understanding of the invention, and constitutes part of specification, with following tool
Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is the structural schematic diagram provided by the invention for carrying on the back out light red light chips.
Fig. 2 is the flow chart of the production method provided by the invention for carrying on the back out light red light chips.
Fig. 3 is the structural schematic diagram of the specific embodiment provided by the invention for carrying on the back out light red light chips.
Fig. 4 is single device pattern schematic diagram after light emitting epitaxial layer provided by the invention etching.
Fig. 5 be it is provided by the invention it is P-GaP layers exposed after single device pattern schematic diagram.
Fig. 6 is the single device pattern signal after N-AlGaInP layers of metal strip of production provided by the invention and P-GaP layers
Figure.
Fig. 7 is single device pattern schematic diagram after vapor deposition reflective isolating layer provided by the invention.
Fig. 8 is single device pattern schematic diagram after production electrode provided by the invention.
Specific embodiment
Below in conjunction with attached drawing, detailed description of the preferred embodiments.It should be understood that this place is retouched
The specific embodiment stated is merely to illustrate and explain the present invention, and is not intended to restrict the invention.
As the first aspect of the invention, provides and a kind of carry on the back out light red light chips, wherein as shown in Figure 1, described carry on the back out
Light red light chips include: sapphire substrate 110, transparent bonded layer 120, light emitting epitaxial layer 130 and electrode 140, the sapphire
One surface of substrate 110 is connect by the transparent bonded layer 120 with a surface of the light emitting epitaxial layer 130, described to shine
The surface away from the sapphire substrate 110 of epitaxial layer 130 connects the electrode 140, and the light emitting epitaxial layer 130 can be sent out
Feux rouges out, and the feux rouges that the light emitting epitaxial layer 130 issues can be through the transparent bonded layer 120 by the sapphire substrate
110 project.
It is provided by the invention to carry on the back out light red light chips, by the light emitting epitaxial layer and sapphire substrate that will issue feux rouges
It is bonded by transparent bonded layer, the feux rouges that light emitting epitaxial layer issues can be penetrated through transparent bonded layer by sapphire substrate
Out, it thus obtains and carries on the back out light red light chips, realize the flip-chip packaged of red light chips.
Specifically, the light red light chips of carrying on the back out further include reflective isolating layer 150, and the setting of reflective isolating layer 150 exists
The side of the light emitting epitaxial layer 130 and the light emitting epitaxial layer 130 deviate from the surface of the sapphire substrate 110.
It is understood that realizing by setting reflective isolating layer and being only capable of leading to by the feux rouges that light emitting epitaxial layer 130 issues
The injection of sapphire substrate 110 is crossed, feux rouges is avoided and is leaked out from other directions.
Specifically, the electrode 140 includes positive electrode 141 and negative electrode 142.
Specifically, the light emitting epitaxial layer 130 includes N-AlGaInP layer 131, MQW quantum well layer 132 and P-GaP layers
133, the MQW quantum well layer 132 between the N-AlGaInP layer 131 and P-GaP layer 133, the P-GaP layer 133 with
The transparent bonded layer 120 connects, and the positive electrode 141 is through the N-AlGaInP layer 131 and MQW quantum well layer 132 and institute
The connection of P-GaP layer 133 is stated, the N-AlGaInP layer 131 is connect with the negative electrode 142.
As the second aspect of the invention, a kind of production method for carrying on the back out light red light chips is provided, wherein such as Fig. 2 institute
Show, the production method for carrying on the back out light red light chips includes:
S110, GaAs substrate is provided, grows light emitting epitaxial layer on the GaAs substrate；
S120, sapphire substrate is provided, transparent bonded layer is coated on the sapphire substrate；
S130, the sapphire substrates are bonded by the transparent bonded layer with the light emitting epitaxial layer；
S140, the removal GaAs substrate；
S150, production electrode pad, the electrode pad are connect with the light emitting epitaxial layer；
S160, cutting, acquisition is independent to carry on the back out light red light chips.
The production method provided by the invention for carrying on the back out light red light chips, by will issue the light emitting epitaxial layer of feux rouges with
Sapphire substrate is bonded by transparent bonded layer, and the feux rouges that light emitting epitaxial layer issues can be through transparent bonded layer by blue precious
Ground mass plate projects, thus obtains and carry on the back out light red light chips, realizes the flip-chip packaged of red light chips, and back provided by the invention
The production method simple process of light red light chips out, it is easy to accomplish.
Specifically, the production method for carrying on the back out light red light chips further includes the steps that in the production electrode pad advance
Capable:
Reflection is made on the surface of the side of the light emitting epitaxial layer and the light emitting epitaxial layer away from the sapphire substrate
Insulating layer.
It is understood that realizing by setting reflective isolating layer and being only capable of leading to by the feux rouges that light emitting epitaxial layer 130 issues
The injection of sapphire substrate 110 is crossed, feux rouges is avoided and is leaked out from other directions.
Specifically, the offer GaAs substrate, growing light emitting epitaxial layer on the GaAs substrate includes:
GaAs substrate is provided；
N-AlGaInP layers, MQW quantum well layer and P-GaP layers are successively grown on the GaAs substrate.
It is specifically, described that transparent bonded layer is coated on the sapphire substrate includes the spin coating on the sapphire substrate
BCB is bonded glue, and the revolving speed of spin coating, between 2000 revs/min ~ 4000 revs/min, the thickness of the BCB bonding glue of spin coating is 5
Between um ~ 10um.
Specifically, described that the sapphire substrates are passed through into the transparent bonded layer and the light emitting epitaxial layer key including logical
It crosses vacuum hotpressing bonding apparatus and is bonded the transparent bonded layer with the light emitting epitaxial layer.
Specifically, the production method for carrying on the back out light red light chips further include the steps that carrying out before the cutting by institute
It states sapphire substrate to be ground, and the thickness of the sapphire substrate after grinding is between 100 um ~ 150um.
It is carried out below with reference to process of the Fig. 3 to Fig. 8 to the production method provided by the invention for carrying on the back out light red light chips detailed
Explanation.
Step 1: as shown in figure 3, successively growing N-AlGaInP layer 131, MQW amount on gaas substrates using MOCVD device
Sub- trap 132 and P-GaP layer 133.It should be noted that temperature and In, Al in the growth course for passing through change MQW Quantum Well 132
Component can change emission wavelength；
Step 2: spin coating BCB is bonded glue on sapphire substrate 110, revolving speed: 2000 ~ 4000 revs/min, obtaining 5 ~ 10um thickness
It is bonded glue film, that is, forms transparent bonded layer 120；
Step 3: vacuum hotpressing bonding apparatus is utilized, in temperature: 250 ~ 300 DEG C, vacuum < 3E-5, pressure: 500 ~ 2000N, when
Between 3 ~ 10min, complete being bonded for sapphire substrate 110 and GaAs light emitting epitaxial layer 130；
Step 4: utilizing wet etching solution (HCL:HNO3:H2O=2:1:1), GaAS substrate is removed, the hair of bonding is retained
Light epitaxial layer 130；
Step 5: utilizing thick film positive photoresist photoresist mask technique, make the photoresist mask layer of 8 ~ 10um, and pass through ICP plasma
Etching technics etches the light emitting epitaxial layer structure outside masked areas completely, forms single device pattern as shown in Figure 4；
Step 6: utilizing positive photoresist photoresist mask technique, make the photoresist mask layer of 3 ~ 4um, and pass through ICP plasma etching
Technique etches the light emitting epitaxial layer structure outside masked areas, and exposure 133 region of P-GaP layer forms as shown in Figure 5 single
Device pattern；
Step 7: as shown in fig. 6, making P-GaP layers of metal extension item and N-AlGaInP using negative photoresist mask technique
Layer metal extends item, and passes through electron beam evaporation equipment, successively evaporated metal layer: Cr/Al/Pt/Au/Pt, wherein Au thickness degree
Not less than 1um；
Step 8: as shown in fig. 7, DBR reflective isolating layer is deposited in whole face, wherein the reflective isolating using electron beam evaporation equipment
Layer structure is the alternating structure with 29 ~ 48 layers of SiO2/Ti3O5, recycles thick film photolithography glue mask technique, makes via etch
Mask layer is etched the DBR reflective isolating layer of unmasked areas using ICP lithographic technique, the metal layer of exposure contact layer；
Step 9: as shown in figure 8, chip positive electrode 141 and 142 figure of negative electrode are made using negative photoresist mask technique,
And chip positive electrode 141 and negative electrode 142 are made by electron beam evaporation equipment, metal layer is followed successively by Cr/Al/Ti/Ni/Au,
Wherein Au thickness degree is not less than 1um；
Step 10: using grinding wheel, sapphire substrate is thinned to 100 ~ 150um by thinned, diamond grinding fluid grinding technique；
Step 11: utilizing 1064nm picosecond laser cutting technique, wafer is cut, formation is independent to carry on the back out light red light chips
Device.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of carry on the back out light red light chips, which is characterized in that the light red light chips of carrying on the back out include: sapphire substrate, transparent key
It closes layer, light emitting epitaxial layer and electrode, a surface of the sapphire substrate and passes through the transparent bonded layer and the luminous extension
The surface connection of layer, the surface away from the sapphire substrate of the light emitting epitaxial layer connects the electrode, described to shine
Epitaxial layer can issue feux rouges, and the feux rouges that the light emitting epitaxial layer issues can be through the transparent bonded layer by described blue precious
Ground mass plate projects.
2. according to claim 1 carry on the back out light red light chips, which is characterized in that the light red light chips of carrying on the back out further include anti-
Insulating layer is penetrated, the side of the light emitting epitaxial layer is arranged in the reflective isolating layer and the light emitting epitaxial layer deviates from the blue treasured
The surface of ground mass plate.
3. according to claim 1 or 2 carry on the back out light red light chips, which is characterized in that the electrode includes positive electrode and bears
Electrode.
4. according to claim 3 carry on the back out light red light chips, which is characterized in that the light emitting epitaxial layer includes N-
AlGaInP layers, MQW quantum well layer and P-GaP layers, the MQW quantum well layer are located at described N-AlGaInP layers and P-GaP layer
Between, described P-GaP layers connect with the transparent bonded layer, and the positive electrode is through described N-AlGaInP layers and MQW quantum well layer
It is connect with described P-GaP layers, described N-AlGaInP layers connect with the negative electrode.
5. a kind of production method for carrying on the back out light red light chips, which is characterized in that the production method packet for carrying on the back out light red light chips
It includes:
GaAs substrate is provided, grows light emitting epitaxial layer on the GaAs substrate；
Sapphire substrate is provided, transparent bonded layer is coated on the sapphire substrate；
The sapphire substrates are bonded by the transparent bonded layer with the light emitting epitaxial layer；
Remove the GaAs substrate；
Electrode pad is made, the electrode pad is connect with the light emitting epitaxial layer；
Cutting, acquisition is independent to carry on the back out light red light chips.
6. the production method according to claim 5 for carrying on the back out light red light chips, which is characterized in that described to carry on the back out light feux rouges core
The production method of piece further includes the steps that carrying out before the production electrode pad:
Reflection is made on the surface of the side of the light emitting epitaxial layer and the light emitting epitaxial layer away from the sapphire substrate
Insulating layer.
7. the production method according to claim 5 for carrying on the back out light red light chips, which is characterized in that the offer GaAs lining
Bottom, growing light emitting epitaxial layer on the GaAs substrate includes:
GaAs substrate is provided；
N-AlGaInP layers, MQW quantum well layer and P-GaP layers are successively grown on the GaAs substrate.
8. the production method according to claim 5 for carrying on the back out light red light chips, which is characterized in that described in the sapphire
Coated on substrate transparent bonded layer include on the sapphire substrate spin coating BCB be bonded glue, and the revolving speed of spin coating 2000 turns/
Minute ~ 4000 revs/min between, the thickness of the BCB of spin coating bonding glue is between 5 um ~ 10um.
9. the production method according to claim 8 for carrying on the back out light red light chips, which is characterized in that described by the sapphire
Substrate includes passing through vacuum hotpressing bonding apparatus for the transparent key by the transparent bonded layer and the light emitting epitaxial layer key
Layer is closed to be bonded with the light emitting epitaxial layer.
10. carrying on the back out the production method of light red light chips according to any one of claim 5 to 9, which is characterized in that institute
That states that the production method for carrying on the back out light red light chips further includes the steps that carrying out before the cutting carries out the sapphire substrate
Grinding, and the thickness of the sapphire substrate after grinding is between 100 um ~ 150um.
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Cited By (6)
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| CN111403569A (en) * | 2020-03-30 | 2020-07-10 | 创维液晶器件(深圳)有限公司 | Flip-chip L ED and preparation method thereof |
| CN111540817A (en) * | 2020-05-19 | 2020-08-14 | 錼创显示科技股份有限公司 | Micro light-emitting diode chip |
| CN112968080A (en) * | 2020-08-18 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Red light LED chip and preparation method thereof |
| WO2022000474A1 (en) * | 2020-07-03 | 2022-01-06 | 天津三安光电有限公司 | Semiconductor light-emitting element |
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| CN116053368A (en) * | 2023-04-03 | 2023-05-02 | 南昌凯捷半导体科技有限公司 | Red light LED chip with ZnO sacrificial layer and manufacturing method thereof |
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| CN112968080A (en) * | 2020-08-18 | 2021-06-15 | 重庆康佳光电技术研究院有限公司 | Red light LED chip and preparation method thereof |
| CN112968080B (en) * | 2020-08-18 | 2022-03-01 | 重庆康佳光电技术研究院有限公司 | Red light LED chip and preparation method thereof |
| CN116053368A (en) * | 2023-04-03 | 2023-05-02 | 南昌凯捷半导体科技有限公司 | Red light LED chip with ZnO sacrificial layer and manufacturing method thereof |
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