CN109541706A - A kind of detection circuit and ray detector - Google Patents
A kind of detection circuit and ray detector Download PDFInfo
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- CN109541706A CN109541706A CN201811559387.9A CN201811559387A CN109541706A CN 109541706 A CN109541706 A CN 109541706A CN 201811559387 A CN201811559387 A CN 201811559387A CN 109541706 A CN109541706 A CN 109541706A
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Abstract
This application discloses a kind of detection circuit and ray detectors；Above-mentioned detection circuit includes: photodiode and front-end amplifier；Front-end amplifier includes: the first operational amplifier, first switch, second switch and first capacitor；Two connecting pins of first switch are separately connected the inverting input terminal and output end of the first operational amplifier, and the both ends of first capacitor are separately connected the inverting input terminal and output end of the first operational amplifier；Two connecting pins of second switch are separately connected the inverting input terminal of the first operational amplifier and the anode of photodiode；The cathode of photodiode is grounded；The non-inverting input terminal of first operational amplifier is grounded；In first switch conducting, second switch is disconnected；When first switch disconnects, second switch conducting.
Description
Technical field
This application involves but be not limited to weak current signal detection technique field, espespecially a kind of detection circuit and X-ray detection X
Device.
Background technique
Currently, photoelectric detective circuit has been applied to multiple fields, photoelectric detective circuit can by optical signal through amplification at
Electric signal output is converted to after reason.However, current photoelectric detective circuit is largely affected there are biggish noise jamming
The treatment effect of follow-up system.
Summary of the invention
The embodiment of the present application provides a kind of detection circuit and ray detector, can reduce the noise of front-end amplifier.
On the one hand, the embodiment of the present application provides a kind of detection circuit, comprising: photodiode and front-end amplifier；Before
Holding amplifier includes: the first operational amplifier, first switch, second switch and first capacitor；Two connections of first switch
End is separately connected the inverting input terminal and output end of the first operational amplifier, and the both ends of first capacitor are separately connected the first operation and put
The inverting input terminal and output end of big device；Two connecting pins of second switch are separately connected the anti-phase input of the first operational amplifier
The anode at end and photodiode；The cathode of photodiode is grounded；The non-inverting input terminal of first operational amplifier is grounded；?
When one switch conduction, second switch is disconnected；When first switch disconnects, second switch conducting.
On the other hand, the embodiment of the present application provides a kind of ray detector, including detection circuit as described above.
On the other hand, the embodiment of the present application provides a kind of detection circuit, comprising: photodiode and front-end amplifier；
Front-end amplifier include: second operational amplifier, the second capacitor, third capacitor, third switch, the 4th switch, the 5th switch with
And the 6th switch；The anode of photodiode is connected to the inverting input terminal of second operational amplifier；The cathode of photodiode
Ground connection；The non-inverting input terminal of second operational amplifier is grounded；Two connecting pins of third switch are separately connected the second operation amplifier
The inverting input terminal of device and one end of third capacitor, the output end of the other end connection second operational amplifier of third capacitor, the
Two connecting pins of four switches are separately connected the both ends of third capacitor；Two connecting pins of the 5th switch are separately connected the second operation
One end of the inverting input terminal of amplifier and the second capacitor, the output of the other end connection second operational amplifier of the second capacitor
Two connecting pins at end, the 6th switch are separately connected the both ends of the second capacitor；The capacitance of third capacitor is less than a quarter
The capacitance of second capacitor；In third switch and six switch conductions, the 4th switch and the 5th switch are disconnected；In the 4th switch
When with five switch conductions, third switch and the 6th switch are disconnected.
On the other hand, the embodiment of the present application provides a kind of ray detector, including detection circuit as described above.
The embodiment of the present application is by being arranged the first switch controlled by reset signal and by the inversion signal control of reset signal
The second switch of system reduces the noise of front-end amplifier.Alternatively, the embodiment of the present application passes through the second capacitor of setting and third electricity
Hold, and control the second capacitor and third capacitor respectively by two groups of switches, to reduce the noise of front-end amplifier.
Other features and advantage will illustrate in the following description, also, partly become from specification
It obtains it is clear that being understood and implementing the application.The purpose of the application and other advantages can be by specifications, right
Specifically noted structure is achieved and obtained in claim and attached drawing.
Detailed description of the invention
Attached drawing is used to provide to further understand technical scheme, and constitutes part of specification, with this
The embodiment of application is used to explain the technical solution of the application together, does not constitute the limitation to technical scheme.
Fig. 1 is a kind of schematic diagram of traditional detection circuit；
Fig. 2 is a kind of schematic diagram of detection circuit provided by the embodiments of the present application；
Fig. 3 is the schematic diagram of another detection circuit provided by the embodiments of the present application；
Fig. 4 is a kind of exemplary diagram of ray detector provided by the embodiments of the present application.
Specific embodiment
Embodiments herein is described in detail below in conjunction with attached drawing.It should be noted that in the feelings not conflicted
Under condition, the features in the embodiments and the embodiments of the present application can mutual any combination.
Fig. 1 is a kind of schematic diagram of traditional detection circuit.As shown in Figure 1, detection circuit include photodiode (PD,
) and front-end amplifier Photo-Diode；Wherein, front-end amplifier includes operational amplifier, reset switch S and feedback electricity
Hold Cf；The anode of photodiode is connected to the inverting input terminal of operational amplifier, the cathode ground connection of photodiode.Operation is put
The non-inverting input terminal ground connection of big device.Two connecting pins of reset switch S are separately connected the inverting input terminal of operational amplifier and defeated
Outlet, the input terminal of control terminal connection reset signal (RSTA) of reset switch S.Feedback capacity CfBoth ends be separately connected operation
The inverting input terminal and output end of amplifier.In other words, reset switch S and feedback capacity CfIt is parallel-connected to operational amplifier
Inverting input terminal and output end.
Wherein, when RSTA is high level, reset switch S conducting, feedback capacity CfThe charge of upper accumulation is released；When
When RSTA is low level, reset switch S is disconnected, and the electric current on photodiode is in feedback capacity CfUpper integral.
In detection circuit shown in Fig. 1, when RSTA is during high level resets, operational amplifier work is negative anti-in unit
Feedback state, closed-loop bandwidth is maximum, and the noise vn of operational amplifier is embodied on the parasitic capacitance CPD of photodiode (PD)；When
When RSTA is low level, the noise vn of operational amplifier will be sampled by parasitic capacitance CPD and will be transferred on feedback capacity Cf, then
The noise voltage of the output end (Vo) of operational amplifier will become:
Wherein, CPDFor the capacitance of the parasitic capacitance of photodiode；CfFor the capacitance of feedback capacity；vnIt is put for operation
The noise of big device.
Above-mentioned noise voltage can be sampled by subsequent analog-digital converter and relevant signal processing system, thus after influencing
The treatment effect of continuous system.Detection circuit shown in FIG. 1 has following two: (1) operational amplifier work is negative in unit
Closed loop noise v when feedbacknIt is very big；(2) noise voltage of the output end of operational amplifier can be also amplified, especially in CPDWith
CfRatio it is very big when.
Fig. 2 is a kind of schematic diagram of detection circuit provided by the embodiments of the present application.As shown in Fig. 2, provided in this embodiment
Detection circuit includes: photodiode (PD) and front-end amplifier；Front-end amplifier include: the first operational amplifier OPA1,
First switch S1, second switch S2And first capacitor Cf1；First switch S1Two connecting pins be separately connected the first operation amplifier
The inverting input terminal and output end of device OPA1, first capacitor Cf1Both ends be separately connected the first operational amplifier OPA1 reverse phase it is defeated
Enter end and output end；Second switch S2Two connecting pins be separately connected the inverting input terminal and light of the first operational amplifier OPA1
The anode of electric diode；The cathode of photodiode is grounded；The non-inverting input terminal of first operational amplifier OPA1 is grounded；First
Switch S1When conducting, second switch S2It disconnects；In first switch S1When disconnection, second switch S2Conducting.The present embodiment is for photoelectricity
The type of diode does not limit.
In one exemplary embodiment, when reset signal is high level, first switch S1Conducting, second switch S2It disconnects；
When reset signal is low level, first switch S1It disconnects, second switch S2Conducting.
In one exemplary embodiment, detection circuit may include first input end and the second input terminal, wherein first is defeated
Enter and terminate into reset signal, the second input terminal accesses the inversion signal of reset signal.First switch S1Control terminal can connect
First input end, second switch S2Control terminal can connect the second input terminal.However, the application does not limit this.
In one exemplary embodiment, detection circuit may include an input terminal and a NOT gate, one end of NOT gate
The input terminal is connected, the other end connects second switch S2Control terminal；First switch S1Control terminal connect the input terminal；Wherein,
The input terminal accesses reset signal, and reset signal is divided into two-way, wherein all the way by obtaining the anti-of reset signal after NOT gate
Reset signal is transmitted to first switch S by phase signals, another way1Control terminal.
In one exemplary embodiment, first switch S1Control terminal when receiving high level, first switch S1Two companies
Meet end conducting, first switch S1Control terminal when receiving low level, first switch S1Two connecting pins disconnect；Second switch
S2Control terminal when receiving high level, second switch S2Two connecting pins conducting, second switch S2Control terminal receive it is low
When level, second switch S2Two connecting pins disconnect.However, the application does not limit this.In other embodiments, may be used
With the conducting switched by low level control.
In one exemplary embodiment, reset signal can be pulse signal.However, the application does not limit this.
Compared to detection circuit shown in FIG. 1, detection circuit shown in Fig. 2 increases an inversion signal by RSTAThe second switch S of control2.In this way, when RSTA is high level, the noise v of the first operational amplifier OPA1nOnly
Parasitic capacitance C can be stored inpIn (i.e. the parasitic capacitance of the input terminal of the first operational amplifier OPA1, Fig. 2 in do not show).
When RSTA is low level, front-end amplifier is in integrating state, the noise v of the first above-mentioned operational amplifier OPA1nIt can quilt
It is transferred to output end, then the noise voltage of the output end of the first operational amplifier will become:
Wherein, CPFor the capacitance of parasitic capacitance；Cf1For the capacitance of first capacitor；vnFor the first operational amplifier OPA1
Noise.Due to Cp< < Cf1, therefore, this partial noise can be ignored.
But RSTA be low level when, the noise and second switch S of the first operational amplifier OPA12Noise vniIt can deposit
Store up the parasitic capacitance C in photodiodePDOn, and it is transferred to the first operational amplifier OPA1's in integrating state next time
Output end, then the noise voltage of the output end of the first operational amplifier OPA1 will become:
Wherein, CPDFor the capacitance of the parasitic capacitance of photodiode；Cf1For the capacitance of first capacitor；vniIt is first
The noise and second switch S of operational amplifier OPA12Noise.
Wherein, in integrating state front-end amplifier closed-loop bandwidth are as follows:
Wherein, GBW is the gain bandwidth product of the first operational amplifier OPA1.Therefore, it is based on Fig. 1 and Fig. 2, using identical
Operational amplifier in the case of, vni< < vn, so that the noise using front-end amplifier shown in Fig. 2 output will be much smaller than figure
The noise of the output of front-end amplifier shown in 1.
Fig. 3 is the schematic diagram of another detection circuit provided by the embodiments of the present application.As shown in figure 3, the present embodiment provides
Detection circuit include: photodiode (PD) and front-end amplifier；Front-end amplifier includes: second operational amplifier
OPA2, the second capacitor Cf2, third capacitor CfD, third switch S3, the 4th switch S4, the 5th switch S5And the 6th switch S6.This Shen
Please the type of photodiode is not limited.
Wherein, the anode of photodiode is connected to the inverting input terminal of second operational amplifier OPA2；Photodiode
Cathode ground connection；The non-inverting input terminal of second operational amplifier OPA2 is grounded；Third switch S3Two connecting pins be separately connected
The inverting input terminal and third capacitor C of second operational amplifier OPA2fDOne end, third capacitor CfDThe other end connection second
The output end of operational amplifier OPA2, the 4th switch S4Two connecting pins be separately connected third capacitor CfDBoth ends；5th opens
Close S5Two connecting pins be separately connected the inverting input terminal and the second capacitor C of second operational amplifier OPA2f2One end, second
Capacitor Cf2The other end connection second operational amplifier OPA2 output end, the 6th switch S6Two connecting pins be separately connected
Two capacitor Cf2Both ends；In third switch S3With the 6th switch S6When conducting, the 4th switch S4With the 5th switch S5It disconnects；?
Four switch S4With the 5th switch S5When conducting, third switch S3With the 6th switch S6It disconnects.
Wherein, third capacitor CfDCapacitance be less than a quarter the second capacitor Cf2Capacitance.For example, third is electric
Hold CfDCapacitance can be 0.25 pico farad (pF), the second capacitor Cf2The value range of capacitance can be 1 to 32 pico farad
(pF).However, the application does not limit this.
In one exemplary embodiment, detection circuit may include third input terminal and the 4th input terminal, wherein third is defeated
Enter and terminate into reset signal, the 4th input terminal accesses the inversion signal of reset signal.Third switch S3Control terminal and the 6th open
Close S6Control terminal can connect third input terminal, the 4th switch S4Control terminal and the 5th switch S5Control terminal can connect
4th input terminal.However, the application does not limit this.
In one exemplary embodiment, detection circuit may include an input terminal and a NOT gate, one end of NOT gate
The input terminal is connected, the other end is separately connected the 4th switch S4Control terminal and the 5th switch S5Control terminal；Third switch S3's
Control terminal and the 6th switch S6Control terminal can connect the input terminal；Wherein, which accesses reset signal, and will reset
Signal is divided into two-way, wherein reset signal is transmitted to by another way all the way by obtaining the inversion signal of reset signal after NOT gate
Third switch S3Control terminal and the 6th switch S6Control terminal.
In one exemplary embodiment, when reset signal is high level, third switch S3With the 6th switch S6Conducting, the
Four switch S4With the 5th switch S5It disconnects；When reset signal is low level, third switch S3With the 6th switch S6It disconnects, the 4th
Switch S4With the 5th switch S5Conducting.
In one exemplary embodiment, third switch S3Control terminal two connecting pins conductings when receiving high level；The
Six switch S6Control terminal two connecting pins conductings when receiving high level；Third switch S3Control terminal when receiving low level
Two connecting pins disconnect；6th switch S6Control terminal disconnect two connecting pins when receiving low level；4th switch S4Control
Two connecting pin conductings when termination receives high level；5th switch S5Control terminal lead two connecting pins when receiving high level
It is logical；4th switch S4Control terminal disconnect two connecting pins when receiving low level；5th switch S5Control terminal receive low electricity
Usually two connecting pins disconnect.However, the application does not limit this.In other embodiments, low level control can also be passed through
Make the conducting of each switch.
In one exemplary embodiment, reset signal can be pulse signal.However, the application does not limit this.
Wherein, the 4th switch S in detection circuit shown in Fig. 34When closure, third capacitor C can be resettedfD, the 6th opens
Close S6When closure, the second capacitor C can be resettedf2。
As shown in figure 3, introducing third capacitor in detection circuit provided in this embodiment in order to further decrease noise
CfD, as pseudo- integrating capacitor, and guarantee CfD< < Cf2。
Wherein, when RSTA is high level, third switch S3With the 6th switch S6Closure, the 4th switch S4With the 5th switch
S5It disconnects, front-end amplifier is in pseudo- integrating state；When RSTA is low level, the 4th switch S4With the 5th switch S5Closure, the
Three switch S3With the 6th switch S6It disconnects, front-end amplifier is in real integrating state.In this way, which pseudo- integral can only occur
State is stored in the parasitic capacitance C of photodiodePDOn noise voltage vndThe second operation amplifier is transferred in real integral
The output end of device OPA2, then the noise voltage of the output end of second operational amplifier OPA2 will become:
Wherein, CPDFor the capacitance of the parasitic capacitance of photodiode；Cf2For the capacitance of the second capacitor；vndFor puppet product
The noise voltage stored when isloation state.
Wherein, due to the closed-loop bandwidth of the front-end amplifier under pseudo- integrating state are as follows:
Wherein, GBW is the gain bandwidth product of second operational amplifier OPA2.Therefore, it is based on Fig. 2 and Fig. 3, using identical
Operational amplifier in the case of, vnd< < vni, to be much smaller than using the noise that front-end amplifier shown in Fig. 3 exports
The noise exported using front-end amplifier shown in Fig. 2.
Fig. 4 is a kind of exemplary diagram of ray detector provided by the embodiments of the present application.In the present example embodiment, ray
Detector may include: the front-end amplifier (FE, Front End), modulus of at least one photodiode, at least one channel
Converter (ADC, Analog-to-Digital Converter) and data acquisition module.Wherein, when the number of photodiode
Mesh be it is multiple, when the number of front-end amplifier is multiple, multiple photodiodes can form photodiode linear array, preceding
End amplifier is connected with photodiode one-to-one correspondence.
Wherein, front-end amplifier is used to the current signal that photodiode exports being converted into analog voltage signal, and more
The output time division multiplexing of the front-end amplifier in channel is connected to the ADC of high speed, and ADC is used to analog voltage signal being converted into number
Word signal, data acquisition module are transferred on computer for acquiring digital signal, and after carrying out preliminary treatment to digital signal.
Wherein, the circuit structure of front-end amplifier can be as shown in Figure 2 or Figure 3.However, the application does not limit this.
In one exemplary embodiment, when the front-end amplifier in Fig. 4 is as shown in Figure 2, in front-end amplifier first
The input terminal of the output end connection ADC of operational amplifier, the input terminal of the output end connection data acquisition module of ADC.
In one exemplary embodiment, when the front-end amplifier in Fig. 4 is as shown in Figure 3, in front-end amplifier second
The input terminal of the output end connection ADC of operational amplifier, the input terminal of the output end connection data acquisition module of ADC.
In an application example, ray detector provided in this embodiment be can be applied in the rays safety detection apparatus of X-ray, use
In reading X-ray and obtain the detection image of X-ray.Wherein, it by using Fig. 2 or front-end amplifier shown in Fig. 3, can drop
The noise of low front-end amplifier improves the dynamic range of rays safety detection apparatus, reduces the accumulated dose of x-ray source, to reduce entire peace
Examine the radiation protection grade of equipment；Alternatively, entire rays safety detection apparatus can be improved in the case where not reducing the accumulated dose of x-ray source
Detection accuracy and resolution ratio.
Claims (10)
1. a kind of detection circuit characterized by comprising photodiode and front-end amplifier；
The front-end amplifier includes: the first operational amplifier, first switch, second switch and first capacitor；
Two connecting pins of the first switch are separately connected the inverting input terminal and output end of first operational amplifier, institute
The both ends for stating first capacitor are separately connected the inverting input terminal and output end of first operational amplifier；The second switch
Two connecting pins are separately connected the inverting input terminal of first operational amplifier and the anode of the photodiode；The light
The cathode of electric diode is grounded；The non-inverting input terminal of first operational amplifier is grounded；
In first switch conducting, the second switch is disconnected；When the first switch disconnects, the second switch is led
It is logical.
2. detection circuit according to claim 1, which is characterized in that when reset signal is high level, described first is opened
Conducting is closed, the second switch disconnects；When the reset signal is low level, the first switch is disconnected, and described second opens
Close conducting.
3. detection circuit according to claim 1, which is characterized in that the number of the photodiode be it is multiple, it is described
The number of front-end amplifier be it is multiple, the front-end amplifier and photodiode one-to-one correspondence are connected.
4. detection circuit according to claim 1, which is characterized in that the detection circuit further include: analog-digital converter and
Data acquisition module；
The output end of first operational amplifier connects the input terminal of the analog-digital converter, the output of the analog-digital converter
End connects the input terminal of the data acquisition module.
5. a kind of ray detector, which is characterized in that including detection circuit according to any one of claims 1 to 4.
6. a kind of detection circuit characterized by comprising photodiode and front-end amplifier；
The front-end amplifier includes: second operational amplifier, the second capacitor, third capacitor, third switch, the 4th switch, the
Five switches and the 6th switch；
The anode of the photodiode is connected to the inverting input terminal of the second operational amplifier；The photodiode
Cathode ground connection；The non-inverting input terminal of the second operational amplifier is grounded；
Two connecting pins of the third switch are separately connected the inverting input terminal and the third of the second operational amplifier
One end of capacitor, the other end of the third capacitor connect the output end of the second operational amplifier, the 4th switch
Two connecting pins are separately connected the both ends of the third capacitor；
Two connecting pins of the 5th switch are separately connected the inverting input terminal and described second of the second operational amplifier
One end of capacitor, the other end of second capacitor connect the output end of the second operational amplifier, the 6th switch
Two connecting pins are separately connected the both ends of second capacitor；
The capacitance of the third capacitor is less than the capacitance of second capacitor of a quarter；
In third switch and six switch conductions, the 4th switch and the 5th switch are disconnected；In the 4th switch
When with five switch conductions, the third switch and the 6th switch are disconnected.
7. detection circuit according to claim 6, which is characterized in that when reset signal is high level, the third is opened
It closes and the 6th switch conduction, the 4th switch and the 5th switch disconnects；When the reset signal is low level, the third
Switch and the 6th switch disconnect, the 4th switch and the 5th switch conduction.
8. detection circuit according to claim 6, which is characterized in that the number of the photodiode be it is multiple, it is described
The number of front-end amplifier be it is multiple, the front-end amplifier and photodiode one-to-one correspondence are connected.
9. detection circuit according to claim 6, which is characterized in that the detection circuit further include: analog-digital converter and
Data acquisition module；
The output end of the second operational amplifier connects the input terminal of the analog-digital converter, the output of the analog-digital converter
End connects the input terminal of the data acquisition module.
10. a kind of ray detector, which is characterized in that including the detection circuit as described in any one of claim 6 to 9.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111225166A (en) * | 2020-03-02 | 2020-06-02 | 上海集成电路研发中心有限公司 | High-dynamic-range image sensor reading circuit and method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101512306A (en) * | 2006-09-06 | 2009-08-19 | 浜松光子学株式会社 | Photodetector |
| JP2010011216A (en) * | 2008-06-27 | 2010-01-14 | Panasonic Corp | Light-receiving amplifier |
| CN102460961A (en) * | 2009-06-22 | 2012-05-16 | 浜松光子学株式会社 | Integrating circuit and light-detection device |
| CN102506903A (en) * | 2011-10-18 | 2012-06-20 | 山东华翼微电子技术有限责任公司 | Photoelectric detection circuit |
| US20150206600A1 (en) * | 2014-01-21 | 2015-07-23 | Aeroflex Colorado Springs Inc. | Low-noise low-distortion signal acquisition circuit and method with reduced area utilization |
| US20150268360A1 (en) * | 2014-03-20 | 2015-09-24 | Texas Instruments Incorporated | Multi-sampling in x-ray receiver for noise reduction |
| CN105282460A (en) * | 2015-10-22 | 2016-01-27 | 天津大学 | Enhanced dynamic range reading method and circuit having offset cancellation |
| CN107710740A (en) * | 2015-07-13 | 2018-02-16 | 夏普株式会社 | Radiation detector |
-
2018
- 2018-12-19 CN CN201811559387.9A patent/CN109541706B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101512306A (en) * | 2006-09-06 | 2009-08-19 | 浜松光子学株式会社 | Photodetector |
| JP2010011216A (en) * | 2008-06-27 | 2010-01-14 | Panasonic Corp | Light-receiving amplifier |
| CN102460961A (en) * | 2009-06-22 | 2012-05-16 | 浜松光子学株式会社 | Integrating circuit and light-detection device |
| CN102506903A (en) * | 2011-10-18 | 2012-06-20 | 山东华翼微电子技术有限责任公司 | Photoelectric detection circuit |
| US20150206600A1 (en) * | 2014-01-21 | 2015-07-23 | Aeroflex Colorado Springs Inc. | Low-noise low-distortion signal acquisition circuit and method with reduced area utilization |
| US20150268360A1 (en) * | 2014-03-20 | 2015-09-24 | Texas Instruments Incorporated | Multi-sampling in x-ray receiver for noise reduction |
| US20180180559A1 (en) * | 2014-03-20 | 2018-06-28 | Texas Instruments Incorporated | Multi-sampling in x-ray receiver for noise reduction |
| CN107710740A (en) * | 2015-07-13 | 2018-02-16 | 夏普株式会社 | Radiation detector |
| CN105282460A (en) * | 2015-10-22 | 2016-01-27 | 天津大学 | Enhanced dynamic range reading method and circuit having offset cancellation |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111225166A (en) * | 2020-03-02 | 2020-06-02 | 上海集成电路研发中心有限公司 | High-dynamic-range image sensor reading circuit and method |
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| CN109541706B (en) | 2020-11-10 |
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