CN111225166A - High-dynamic-range image sensor reading circuit and method - Google Patents
High-dynamic-range image sensor reading circuit and method Download PDFInfo
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- CN111225166A CN111225166A CN202010136381.1A CN202010136381A CN111225166A CN 111225166 A CN111225166 A CN 111225166A CN 202010136381 A CN202010136381 A CN 202010136381A CN 111225166 A CN111225166 A CN 111225166A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/53—Control of the integration time
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
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Abstract
The invention discloses an image sensor reading circuit with a high dynamic range, wherein the inverting input end of an operational amplifier is connected with one ends of a switch S2, a switch S3 and a capacitor C1, the other end of the capacitor C1 is connected with one end of a switch S4, the other end of a switch S2 is connected with one end of a switch S6, the other end of the switch S3 is simultaneously connected with the other end of a switch S4, one end of a switch S5, a control end of a counter and the output end of the operational amplifier, the other end of the switch S5 is connected with one end of a capacitor C2 and the other end of the switch S6, and the other end of a capacitor C2 is connected with; the inverting input of the operational amplifier is connected to the output of the pixel cell through the row select switch S1. The image sensor reading circuit and the reading method with the high dynamic range can effectively improve the dynamic range of the image sensor and can effectively reduce the area of a chip.
Description
Technical Field
The invention relates to the field of image sensors, in particular to a high-dynamic-range image sensor reading circuit and a high-dynamic-range image sensor reading method.
Background
With the continuous development of semiconductor technology, CMOS image sensors have become ubiquitous. The CMOS image sensor has been widely used in various industries such as industrial control, traffic security, consumer electronics, aerospace, etc., and the development of science and technology also puts forward more and higher requirements for the image sensor, such as high speed, high dynamic range, high signal-to-noise ratio, etc. The high dynamic imaging has wide application requirements in the fields of traffic security and scientific research.
Generally, methods for implementing a high dynamic image in a CMOS image sensor include the following two methods: (1) the traditional pixel circuit carries out long-short exposure control and signal splicing in the later period, but the control method is complex, complex digital calculation is needed, and the power consumption of a chip is increased; (2) the logarithmic pixel unit is adopted, and the signal voltage output by the framework and the illumination intensity are in logarithmic relation, so that a high dynamic image is obtained, but the pixel consistency is not high, and the realization difficulty is high. Therefore, new methods for improving the dynamic range of the image sensor are needed.
In addition, in the readout circuit of the image sensor in the prior art, the pixel signal needs to be sampled first, and then analog-to-digital conversion is performed on the sampled pixel signal to read out the digital value of the pixel signal. The operational amplifiers are needed in the sampling and analog-to-digital conversion processes, in order to enable the reading circuit to be smoothly and orderly carried out, the two operational amplifiers are sequentially arranged in the reading circuit, and the operational amplifiers used in the analog-to-digital conversion are connected to the counter to count. The structure of the reading circuit in the prior art is complicated, which is not beneficial to the improvement of the integration level of the reading circuit of the image sensor and the reduction of the area of a chip.
Disclosure of Invention
The invention aims to provide a reading circuit and a reading method of an image sensor with a high dynamic range, which can effectively improve the dynamic range of the image sensor and effectively reduce the area of a chip.
In order to achieve the purpose, the invention adopts the following technical scheme: a high dynamic range image sensor readout circuit comprises a pixel unit, an operational amplifier, a row selection switch S1, a switch S2, a switch S3, a switch S4, a switch S5, a switch S6, a capacitor C1, a capacitor C2 and a counter; the inverting input end of the operational amplifier is connected with one ends of a switch S2, a switch S3 and a capacitor C1, the other end of the capacitor C1 is connected with one end of a switch S4, the other end of the switch S2 is connected with one end of a switch S6, the other end of the switch S3 is simultaneously connected with the other end of the switch S4, one end of a switch S5, the control end of the counter and the output end of the operational amplifier, the other end of the switch S5 is connected with one end of a capacitor C2 and the other end of a switch S6, and the other end of the capacitor C2 is connected with the negative electrode of a power; the inverting input of the operational amplifier is connected to the output of the pixel cell through a row select switch S1.
Further, a non-inverting input terminal of the operational amplifier inputs a reference signal.
Further, the reference signal includes a fixed reference voltage and a ramp voltage.
Further, the pixel unit comprises a photodiode, wherein the anode of the photodiode is connected with the negative electrode of the power supply, and the cathode of the photodiode is connected with the row selection switch S1.
Furthermore, the pixel units are located in a pixel array, the output ends of the same row of pixel units in the pixel array are respectively connected with one ends of different row selection switches, and the other ends of the different row selection switches are connected with the inverting input end of the operational amplifier.
A method for pixel signal readout by a high dynamic range image sensor readout circuit, comprising the steps of:
s01: the switch S3 and the switch S5 are turned on, the row selection switch S1, the switch S2, the switch S4 and the switch S6 are turned off, and the operation is carried outResetting the operational amplifier, wherein a fixed reference voltage V is input to a non-inverting input terminal of the operational amplifierREFAnd the voltage of the inverting input end, the voltage of the non-inverting input end and the voltage of the output end of the operational amplifier are all equal to VREF；
S02: the row selection switch S1, the switch S4 and the switch S5 are turned on, the switch S2, the switch S3 and the switch S6 are turned off, the readout circuit integrates the pixel signal output by the pixel unit, and at the moment, the fixed reference voltage V is input to the non-inverting input end of the operational amplifierREF；
S03: the switch S2 and the switch S6 are turned on, the row selection switch S1, the switch S3, the switch S4 and the switch S5 are turned off, and the non-inverting input end of the operational amplifier is connected with the ramp voltage VRAMP(ii) a The readout circuit performs analog-to-digital conversion on the pixel signal to obtain a digital value of the pixel signal.
Further, in step S03, when the switch S2 and the switch S6 are turned on and the row selection switch S1, the switch S3, the switch S4 and the switch S5 are turned off, the counter starts counting, the ramp voltage changes with a fixed slope, when the ramp voltage is equal to the pixel signal, the operational amplifier is inverted, the comparator output end signal jumps to stop counting, and the count value generated by the counter is the digital value of the pixel signal.
Further, the readout circuit performs correlated double sampling on the pixel array, and step S03 includes reset pixel signal readout and exposure pixel signal readout.
The invention has the beneficial effects that: the readout circuit can effectively improve the dynamic range of the image sensor by flexibly adjusting the pixel signal integration time, and can effectively reduce the area of a chip where the readout circuit is located by realizing the pixel signal integration and the analog-to-digital conversion by using the same operational amplifier.
Drawings
FIG. 1 is a high dynamic range image sensor readout circuit in accordance with the present invention;
FIG. 2 is a timing diagram illustrating the operation of the readout circuit of the image sensor according to the present invention;
FIG. 3 is a detailed diagram of the image sensor readout circuit of step S01 according to the present invention;
FIG. 4 is a detailed diagram of the image sensor readout circuit of step S02 according to the present invention;
fig. 5 is a detailed diagram of the image sensor readout circuit of step S03 according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings.
The invention provides a high dynamic range image sensor reading circuit which is used for reading pixel signals, and the read pixel signals are digital values. As shown in fig. 1, the readout circuit of the present invention includes a pixel unit, an operational amplifier, a row selection switch S1, a switch S2, a switch S3, a switch S4, a switch S5, a switch S6, a capacitor C1, a capacitor C2, and a counter; the inverting input end of the operational amplifier is connected with one end of the switch S2, the switch S3 and the capacitor C1, and is used as a node N1; the other end of the capacitor C1 is connected with one end of a switch S4, the other end of the switch S2 is connected with one end of a switch S6, the other end of the switch S3 is simultaneously connected with the other end of a switch S4, one end of a switch S5, the control end of the counter and the output end of the operational amplifier, the other end of the switch S5 is connected with one end of the capacitor C2 and the other end of the switch S6, and the other end of the capacitor C2 is connected with the negative pole of the power supply; the inverting input of the operational amplifier is connected to the output of the pixel cell through the row select switch S1. The non-inverting input end of the operational amplifier inputs a reference signal VRAMP, wherein the reference signal VRAMP comprises a fixed reference voltage and a ramp voltage.
With reference to fig. 1, a plurality of pixel units form a pixel array, the connection relationship between each pixel unit in the pixel array and the readout circuit can be determined according to the specific readout mode of the pixel array, when the pixel array performs pixel signal readout in a column readout mode, the pixel units in the same column in the pixel array are connected to the same readout circuit, and the connection relationship of the readout circuit is described in detail below by taking only one pixel unit in the column readout circuit as an example. The output end of the pixel unit is connected to the inverting input end of the operational amplifier through the row selection switch S1; specifically, the pixel unit includes a photodiode, wherein an output terminal of the pixel unit is connected to one end of the row selection switch S1, the other end of the row selection switch S1 is connected to an inverting input terminal of the operational amplifier, an anode of the photodiode is connected to a negative electrode of the power supply, and a cathode of the photodiode is connected to one end of the row selection switch S1. In fig. 1, the pixel units are located in a pixel array, the output ends of the same row of pixel units in the pixel array are respectively connected with one ends of different row selection switches, and the other ends of the different row selection switches are connected with the inverting input end of an operational amplifier; that is, the photodiode and row select switch S1 of FIG. 1 may be connected as a repeating unit at node N1, combined into a column-level signal processing image sensor.
As shown in fig. 2-5, the method for reading out pixel signals by the image sensor readout circuit with high dynamic range provided by the present invention includes the following steps:
s01: as shown in fig. 3, the switch S3 and the switch S5 are turned on, the row selection switch S1, the switch S2, the switch S4 and the switch S6 are turned off, the operational amplifier is reset, and the fixed reference voltage V is input to the non-inverting input terminal of the operational amplifierREFAnd the voltage of the inverting input end, the voltage of the non-inverting input end and the voltage of the output end of the operational amplifier are all equal to VREF；
S02: as shown in fig. 4, the row selection switch S1, the switch S4 and the switch S5 are turned on, the switch S2, the switch S3 and the switch S6 are turned off, and the readout circuit integrates the pixel signal output by the pixel unit, and at this time, the non-inverting input terminal of the operational amplifier inputs the fixed reference voltage VREF. In the integration process, the dynamic range of the image sensor can be improved as long as the time of the integration process is increased. Specifically increasing the time of the integration process may be accomplished by controlling the specific times at which the row select switch S1, switch S4, and switch S5 are turned on. The specific dynamic range of the image sensor can be flexibly set according to the process condition and the application environment of the image sensor. Specifically, integrating the pixel signal means integrating the photocurrent generated by the photodiode in the pixel unit.
S03: as shown in fig. 5, the switchS2 and the switch S6 are turned on, the row selection switch S1, the switch S3, the switch S4 and the switch S5 are turned off, and the non-inverting input end of the operational amplifier is connected with the ramp voltage VRAMP(ii) a The ramp voltage can be generated by a ramp generator in the prior art, and the readout circuit performs analog-to-digital conversion on the pixel signal to obtain a digital value of the pixel signal. Specifically, when the switch S2 and the switch S6 are turned on, and the row selection switch S1, the switch S3, the switch S4 and the switch S5 are turned off, the counter starts counting, the ramp voltage changes with a fixed slope, when the ramp unit and the pixel signal are equal, the ramp unit and the pixel signal form an intersection in fig. 5, the operational amplifier is turned over at the intersection, the output end signal of the comparator jumps to stop counting by the counter, and the count value generated by the counter is the digital value of the pixel signal. In the invention, all the pixel signals after analog-to-digital conversion are digital pixel signals, namely digital values corresponding to the pixel signals output by the pixel units.
The operational amplifier used in the analog-to-digital conversion in the step is the same as the operational amplifier used in the pixel signal integration in the step S02, and compared with the structure in the prior art in which the sampling and the analog-to-digital conversion respectively use the corresponding operational amplifiers, the structure in the invention can effectively reduce the chip area. In the invention, the image sensor readout circuit can sample and read out the pixel signals by adopting a correlated double sampling mode or other sampling modes in the prior art, when the readout circuit performs correlated double sampling on the pixel array, the step S03 includes reset pixel signal readout and exposure pixel signal readout, and the methods of reset pixel signal readout and exposure pixel signal readout are both the methods in the step S03. The related double sampling can eliminate the interference of reset noise, has the inhibiting effect on low-frequency noise, can obviously improve the signal-to-noise ratio and improve the signal detection precision. Because the pixel signal output by each pixel unit contains both photosensitive signal and reset pulse voltage signal, if the output pixel signal is sampled at the integration start time and the integration end time of the photoelectric signal (within a pixel signal output period, two sampling pulses are generated, two levels of the output signal are respectively sampled, namely, one time is to sample the reset signal level, and the other time is to sample the exposure signal level), and the sampling time interval is held well for two times, so that the noise voltage difference of the two times of sampling is almost the same, and the two sampling values are subtracted, thereby basically eliminating the interference of reset noise and obtaining the actual effective amplitude of the exposure signal level.
The readout circuit can effectively improve the dynamic range of the image sensor by flexibly adjusting the pixel signal integration time, and can effectively reduce the area of a chip where the readout circuit is located by realizing the pixel signal integration and the analog-to-digital conversion by the same operational amplifier.
The above description is only a preferred embodiment of the present invention, and the embodiment is not intended to limit the scope of the present invention, so that all equivalent structural changes made by using the contents of the specification and the drawings of the present invention should be included in the scope of the appended claims.
Claims (8)
1. The image sensor reading circuit with high dynamic range is characterized by comprising a pixel unit, an operational amplifier, a row selection switch S1, a switch S2, a switch S3, a switch S4, a switch S5, a switch S6, a capacitor C1, a capacitor C2 and a counter; the inverting input end of the operational amplifier is connected with one ends of a switch S2, a switch S3 and a capacitor C1, the other end of the capacitor C1 is connected with one end of a switch S4, the other end of the switch S2 is connected with one end of a switch S6, the other end of the switch S3 is simultaneously connected with the other end of the switch S4, one end of a switch S5, the control end of the counter and the output end of the operational amplifier, the other end of the switch S5 is connected with one end of a capacitor C2 and the other end of a switch S6, and the other end of the capacitor C2 is connected with the negative electrode of a power; the inverting input of the operational amplifier is connected to the output of the pixel cell through a row select switch S1.
2. The high dynamic range image sensor readout circuit of claim 1, wherein a reference signal is input to a non-inverting input of the operational amplifier.
3. A high dynamic range image sensor readout circuit as in claim 2 wherein the reference signal comprises a fixed reference voltage and a ramp voltage.
4. A high dynamic range image sensor readout circuit as in claim 1 wherein the pixel cell comprises a photodiode, the anode of the photodiode is connected to the negative terminal of the power supply, and the cathode of the photodiode is connected to the row select switch S1.
5. The readout circuit of claim 1, wherein the pixel units are located in a pixel array, the output terminals of the same column of pixel units in the pixel array are respectively connected to one ends of different row selection switches, and the other ends of the different row selection switches are connected to the inverting input terminal of the operational amplifier.
6. A method for pixel signal readout by a high dynamic range image sensor readout circuit, comprising the steps of:
s01: the switch S3 and the switch S5 are turned on, the row selection switch S1, the switch S2, the switch S4 and the switch S6 are turned off, the operational amplifier is reset, and at the moment, the fixed reference voltage V is input into the non-inverting input end of the operational amplifierREFAnd the voltage of the inverting input end, the voltage of the non-inverting input end and the voltage of the output end of the operational amplifier are all equal to VREF；
S02: the row selection switch S1, the switch S4 and the switch S5 are turned on, the switch S2, the switch S3 and the switch S6 are turned off, the readout circuit integrates the pixel signal output by the pixel unit, and at the moment, the fixed reference voltage V is input to the non-inverting input end of the operational amplifierREF；
S03: the switch S2 and the switch S6 are turned on, the row selection switch S1, the switch S3, the switch S4 and the switch S5 are turned off, and the non-inverting input end of the operational amplifier is connected with the ramp voltage VRAMP(ii) a The readout circuit performs analog-to-digital conversion on the pixel signal to obtain a digital value of the pixel signal.
7. The method according to claim 6, wherein in step S03, when the switch S2 and the switch S6 are turned on and the row selection switch S1, the switch S3, the switch S4 and the switch S5 are turned off, the counter starts counting, the ramp voltage changes with a fixed slope, when the ramp voltage is equal to the pixel signal, the operational amplifier is turned over, the comparator output signal jumps to stop counting, and the count value generated by the counter is the digital value of the pixel signal.
8. A method for pixel signal readout as claimed in claim 6 wherein said readout circuit performs correlated double sampling of the pixel array, then step S03 includes reset pixel signal readout and exposure pixel signal readout.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022066A (en) * | 2011-09-23 | 2013-04-03 | 三星电子株式会社 | Image sensor and x-ray image sensing module including the same |
| WO2013124928A1 (en) * | 2012-02-22 | 2013-08-29 | 旭化成エレクトロニクス株式会社 | Digital/analog converter and method for controlling same |
| US20150296163A1 (en) * | 2014-04-11 | 2015-10-15 | Canon Kabushiki Kaisha | Image capturing apparatus and image capturing system |
| CN106921838A (en) * | 2017-02-09 | 2017-07-04 | 天津大学 | Cmos image sensor row level ADC with mixing CDS |
| US20180063450A1 (en) * | 2016-09-01 | 2018-03-01 | Renesas Electronics Corporation | Image pickup device |
| CN109541706A (en) * | 2018-12-19 | 2019-03-29 | 地太科特电子制造(北京)有限公司 | A kind of detection circuit and ray detector |
| CN109587420A (en) * | 2018-11-09 | 2019-04-05 | 上海集成电路研发中心有限公司 | A kind of imaging sensor high-precision reading circuit structure and working sequence control method |
| CN109587419A (en) * | 2018-11-06 | 2019-04-05 | 上海集成电路研发中心有限公司 | A kind of imaging sensor low-power consumption reading circuit structure and working sequence control method |
| CN110351500A (en) * | 2019-07-09 | 2019-10-18 | 西安微电子技术研究所 | A kind of cmos image sensor reading circuit of two kinds of exposure modes of compatibility |
-
2020
- 2020-03-02 CN CN202010136381.1A patent/CN111225166B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022066A (en) * | 2011-09-23 | 2013-04-03 | 三星电子株式会社 | Image sensor and x-ray image sensing module including the same |
| WO2013124928A1 (en) * | 2012-02-22 | 2013-08-29 | 旭化成エレクトロニクス株式会社 | Digital/analog converter and method for controlling same |
| US20150296163A1 (en) * | 2014-04-11 | 2015-10-15 | Canon Kabushiki Kaisha | Image capturing apparatus and image capturing system |
| US20180063450A1 (en) * | 2016-09-01 | 2018-03-01 | Renesas Electronics Corporation | Image pickup device |
| CN106921838A (en) * | 2017-02-09 | 2017-07-04 | 天津大学 | Cmos image sensor row level ADC with mixing CDS |
| CN109587419A (en) * | 2018-11-06 | 2019-04-05 | 上海集成电路研发中心有限公司 | A kind of imaging sensor low-power consumption reading circuit structure and working sequence control method |
| CN109587420A (en) * | 2018-11-09 | 2019-04-05 | 上海集成电路研发中心有限公司 | A kind of imaging sensor high-precision reading circuit structure and working sequence control method |
| CN109541706A (en) * | 2018-12-19 | 2019-03-29 | 地太科特电子制造(北京)有限公司 | A kind of detection circuit and ray detector |
| CN110351500A (en) * | 2019-07-09 | 2019-10-18 | 西安微电子技术研究所 | A kind of cmos image sensor reading circuit of two kinds of exposure modes of compatibility |
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