CN109541706B - Detection circuit and ray detector - Google Patents
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- CN109541706B CN109541706B CN201811559387.9A CN201811559387A CN109541706B CN 109541706 B CN109541706 B CN 109541706B CN 201811559387 A CN201811559387 A CN 201811559387A CN 109541706 B CN109541706 B CN 109541706B
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Abstract
The application discloses a detection circuit and a ray detector; the detection circuit includes: a photodiode and a front-end amplifier; the front-end amplifier includes: the circuit comprises a first operational amplifier, a first switch, a second switch and a first capacitor; two connecting ends of the first switch are respectively connected with the inverting input end and the output end of the first operational amplifier, and two ends of the first capacitor are respectively connected with the inverting input end and the output end of the first operational amplifier; two connecting ends of the second switch are respectively connected with the inverting input end of the first operational amplifier and the anode of the photodiode; the cathode of the photodiode is grounded; the non-inverting input end of the first operational amplifier is grounded; when the first switch is turned on, the second switch is turned off; when the first switch is turned off, the second switch is turned on.
Description
Technical Field
The present application relates to but is not limited to the field of weak current signal detection technologies, and in particular, to a detection circuit and a radiation detector.
Background
At present, photoelectric detection circuits have been applied to a plurality of fields, and the photoelectric detection circuits can convert optical signals into electrical signals after amplification processing. However, the current photoelectric detection circuit has large noise interference, which greatly affects the processing effect of the subsequent system.
Disclosure of Invention
The embodiment of the application provides a detection circuit and a ray detector, which can reduce the noise of a front-end amplifier.
In one aspect, an embodiment of the present application provides a detection circuit, including: a photodiode and a front-end amplifier; the front-end amplifier includes: the circuit comprises a first operational amplifier, a first switch, a second switch and a first capacitor; two connecting ends of the first switch are respectively connected with the inverting input end and the output end of the first operational amplifier, and two ends of the first capacitor are respectively connected with the inverting input end and the output end of the first operational amplifier; two connecting ends of the second switch are respectively connected with the inverting input end of the first operational amplifier and the anode of the photodiode; the cathode of the photodiode is grounded; the non-inverting input end of the first operational amplifier is grounded; when the first switch is turned on, the second switch is turned off; when the first switch is turned off, the second switch is turned on.
In another aspect, the present application provides a radiation detector including the detection circuit as described above.
In another aspect, an embodiment of the present application provides a detection circuit, including: a photodiode and a front-end amplifier; the front-end amplifier includes: the second operational amplifier, the second capacitor, the third switch, the fourth switch, the fifth switch and the sixth switch; the anode of the photodiode is connected to the inverting input end of the second operational amplifier; the cathode of the photodiode is grounded; the non-inverting input end of the second operational amplifier is grounded; two connecting ends of the third switch are respectively connected with the inverting input end of the second operational amplifier and one end of the third capacitor, the other end of the third capacitor is connected with the output end of the second operational amplifier, and two connecting ends of the fourth switch are respectively connected with two ends of the third capacitor; two connecting ends of the fifth switch are respectively connected with the inverting input end of the second operational amplifier and one end of the second capacitor, the other end of the second capacitor is connected with the output end of the second operational amplifier, and two connecting ends of the sixth switch are respectively connected with two ends of the second capacitor; the capacitance value of the third capacitor is less than one fourth of the capacitance value of the second capacitor; when the third switch and the sixth switch are turned on, the fourth switch and the fifth switch are turned off; when the fourth switch and the fifth switch are turned on, the third switch and the sixth switch are turned off.
In another aspect, the present application provides a radiation detector including the detection circuit as described above.
The embodiment of the application reduces the noise of the front-end amplifier by arranging the first switch controlled by the reset signal and the second switch controlled by the inverted signal of the reset signal. Or, in the embodiment of the application, the second capacitor and the third capacitor are arranged, and the second capacitor and the third capacitor are respectively controlled by two groups of switches, so that noise of the front-end amplifier is reduced.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the application. The objectives and other advantages of the application may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the claimed subject matter and are incorporated in and constitute a part of this specification, illustrate embodiments of the subject matter and together with the description serve to explain the principles of the subject matter and not to limit the subject matter.
FIG. 1 is a schematic diagram of a conventional detection circuit;
fig. 2 is a schematic diagram of a detection circuit according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of another detection circuit provided in an embodiment of the present application;
fig. 4 is an exemplary diagram of a radiation detector provided in an embodiment of the present application.
Detailed Description
Embodiments of the present application will be described in detail below with reference to the accompanying drawings. It should be noted that the embodiments and features of the embodiments in the present application may be arbitrarily combined with each other without conflict.
Fig. 1 is a schematic diagram of a conventional detection circuit. As shown in fig. 1, the detection circuit includes a Photodiode (PD) and a front-end amplifier; wherein the front-end amplifier comprises an operational amplifier, a reset switch S and a feedback capacitor Cf(ii) a The positive pole of the photodiode is connected to the inverting input end of the operational amplifier, and the negative pole of the photodiode is grounded. The non-inverting input terminal of the operational amplifier is grounded. Two connecting ends of the reset switch S are respectively connected with the inverting input end and the output end of the operational amplifier, and the control end of the reset switch S is connected with the input end of a Reset Signal (RSTA). Feedback capacitance CfBoth ends of the operational amplifier are respectively connected with the inverting input end and the output end of the operational amplifier. In other words, the reset switch S and the feedback capacitor CfAnd the inverting input end and the output end of the operational amplifier are connected in parallel.
When RSTA is high level, the reset switch S is conducted, and the feedback capacitor C is connectedfThe accumulated charge is released; when RSTA is low, the reset switch S is off, and the current on the photodiode is in the feedback capacitor CfAnd (4) integrating.
In the detection circuit shown in fig. 1, when RSTA is in a high level reset period, the operational amplifier works in a unit negative feedback state, the closed loop bandwidth is the largest, and the noise vn of the operational amplifier is reflected on the parasitic capacitance CPD of the Photodiode (PD); when RSTA is low, the noise vn of the operational amplifier will be sampled by the parasitic capacitance CPD and transferred to the feedback capacitance Cf, and the noise voltage at the output (Vo) of the operational amplifier will become:
wherein, CPDA capacitance value that is a parasitic capacitance of the photodiode; cfIs the capacitance value of the feedback capacitor; v. ofnIs noise of the operational amplifier.
The noise voltage is sampled by the subsequent analog-to-digital converter and the related signal processing system, thereby affecting the processing effect of the subsequent system. The detection circuit shown in fig. 1 has two problems: (1) closed loop noise v of operational amplifier working in unit negative feedbacknIs very large; (2) the noise voltage at the output of the operational amplifier is also amplified, especially at CPDAnd CfWhen the ratio of (A) to (B) is large.
Fig. 2 is a schematic diagram of a detection circuit according to an embodiment of the present disclosure. As shown in fig. 2, the detection circuit provided in this embodiment includes: a Photodiode (PD) and a front-end amplifier; the front-end amplifier includes: a first operational amplifier OPA1, a first switch S1A second switch S2And a first capacitor Cf1(ii) a First switch S1Respectively connected to the inverting input and output of the first operational amplifier OPA1, a first capacitor Cf1Are respectively connected with the inverting input terminal and the output terminal of the first operational amplifier OPA 1; first, theTwo switches S2Are respectively connected with the inverting input end of the first operational amplifier OPA1 and the anode of the photodiode; the cathode of the photodiode is grounded; the non-inverting input of the first operational amplifier OPA1 is grounded; at the first switch S1When conducting, the second switch S2Disconnecting; at the first switch S1When disconnected, the second switch S2And conducting. The present embodiment is not limited to the type of photodiode.
In an exemplary embodiment, the first switch S is turned on when the reset signal is at a high level1On, the second switch S2Disconnecting; when the reset signal is at low level, the first switch S1Open, second switch S2And conducting.
In an exemplary embodiment, the detection circuit may include a first input terminal and a second input terminal, wherein the first input terminal is connected to the reset signal, and the second input terminal is connected to an inverted signal of the reset signal. First switch S1Can be connected with the first input end and the second switch S2May be connected to the second input terminal. However, this is not limited in this application.
In an exemplary embodiment, the detection circuit may include an input terminal and a not gate, one end of the not gate is connected to the input terminal, and the other end is connected to the second switch S2The control terminal of (1); first switch S1The control end of the input end is connected with the input end; the input end is connected with a reset signal and divides the reset signal into two paths, wherein one path obtains an inverted signal of the reset signal after passing through a NOT gate, and the other path transmits the reset signal to the first switch S1The control terminal of (1).
In an exemplary embodiment, the first switch S1When the control terminal of (2) receives a high level, the first switch S1Is conducted, a first switch S1When the control terminal receives a low level, the first switch S1The two connection ends are disconnected; a second switch S2When the control terminal of (2) receives a high level, the second switch S2Is conducted, and a second switch S2When the control terminal of (2) receives a low level, the second switch S2The two connections are disconnected. However, this is not limited in this application. In other embodiments, the switch may also be turned on by a low level control.
In an exemplary embodiment, the reset signal may be a pulse signal. However, this is not limited in this application.
Compared with the detection circuit shown in FIG. 1, the detection circuit shown in FIG. 2 adds an inverse signal of RSTAControlled second switch S2. Thus, when RSTA is high, the noise v of the first operational amplifier OPA1nWill only be stored in the parasitic capacitance Cp(i.e., parasitic capacitance at the input of the first operational amplifier OPA1, not shown in fig. 2). When RSTA is low, the front-end amplifier is in the integrating state, and the noise v of the first operational amplifier OPA1 is abovenWill be transferred to the output, the noise voltage at the output of the first operational amplifier will become:
wherein, CPA capacitance value which is a parasitic capacitance; cf1Is the capacitance value of the first capacitor; v. ofnIs the noise of the first operational amplifier OPA 1. Due to Cp<<Cf1Therefore, this part of the noise is negligible.
However, when RSTA is low, noise of the first operational amplifier OPA1 and the second switch S2Is generated by the noise vniParasitic capacitance C stored in the photodiodePDAnd is transferred to the output of the first operational amplifier OPA1 at the next integration state, the noise voltage at the output of the first operational amplifier OPA1 will become:
wherein, CPDA capacitance value that is a parasitic capacitance of the photodiode; cf1Is the capacitance value of the first capacitor; v. ofniNoise of the first operational amplifier OPA1 and the second switch S2The noise of (2).
Wherein, the closed loop bandwidth of the front-end amplifier in the integration state is:
where GBW is the gain-bandwidth product of the first operational amplifier OPA 1. Thus, based on fig. 1 and 2, v is the same operational amplifier usedni<<vnThus, the noise output by the front-end amplifier shown in fig. 2 is much less than the noise output by the front-end amplifier shown in fig. 1.
Fig. 3 is a schematic diagram of another detection circuit provided in an embodiment of the present application. As shown in fig. 3, the detection circuit provided in this embodiment includes: a Photodiode (PD) and a front-end amplifier; the front-end amplifier includes: second operational amplifier OPA2, second capacitor Cf2A third capacitor CfDAnd a third switch S3And a fourth switch S4The fifth switch S5And a sixth switch S6. The present application is not limited as to the type of photodiode.
Wherein the anode of the photodiode is connected to the inverting input terminal of the second operational amplifier OPA 2; the cathode of the photodiode is grounded; the non-inverting input of the second operational amplifier OPA2 is grounded; third switch S3Are connected to the inverting input terminal of the second operational amplifier OPA2 and the third capacitor C, respectivelyfDOne terminal of (C), a third capacitor CfDIs connected to the output of the second operational amplifier OPA2, a fourth switch S4Are respectively connected with a third capacitor CfDBoth ends of (a); fifth switch S5Are connected to the inverting input terminal of the second operational amplifier OPA2 and the second capacitor C, respectivelyf2One terminal of (C), a second capacitor Cf2Is connected to a second operational amplifier O at the other endOutput of PA2, sixth switch S6Two connecting ends of the first capacitor are respectively connected with a second capacitor Cf2Both ends of (a); in the third switch S3And a sixth switch S6When turned on, the fourth switch S4And a fifth switch S5Disconnecting; at the fourth switch S4And a fifth switch S5When turned on, the third switch S3And a sixth switch S6And (5) disconnecting.
Wherein the third capacitor CfDIs less than one fourth of the second capacitance Cf2The capacitance value of (2). For example, the third capacitor CfDMay have a capacitance value of 0.25 picofarad (pF), the second capacitor Cf2The capacitance value of (c) may range from 1 to 32 picofarads (pF). However, this is not limited in this application.
In an exemplary embodiment, the detection circuit may include a third input terminal and a fourth input terminal, wherein the third input terminal is connected to the reset signal, and the fourth input terminal is connected to the inverted signal of the reset signal. Third switch S3And a sixth switch S6Can be connected to the third input terminal, a fourth switch S4And a fifth switch S5May be connected to the fourth input terminal. However, this is not limited in this application.
In an exemplary embodiment, the detection circuit may include an input terminal and a not gate, one end of the not gate is connected to the input terminal, and the other end of the not gate is connected to the fourth switch S respectively4And a fifth switch S5The control terminal of (1); third switch S3And a sixth switch S6The control terminal of (a) can be connected to the input terminal; the input end is connected with a reset signal and divides the reset signal into two paths, wherein one path obtains an inverted signal of the reset signal after passing through a NOT gate, and the other path transmits the reset signal to a third switch S3And a sixth switch S6The control terminal of (1).
In an exemplary embodiment, the third switch S is turned on when the reset signal is at a high level3And a sixth switch S6On, the fourth switch S4And a fifth switch S5Disconnecting; when the reset signal is lowNormally, the third switch S3And a sixth switch S6Open, fourth switch S4And a fifth switch S5And conducting.
In an exemplary embodiment, the third switch S3When the control end receives a high level, the two connecting ends are conducted; sixth switch S6When the control end receives a high level, the two connecting ends are conducted; third switch S3When the control end receives low level, the two connecting ends are disconnected; sixth switch S6When the control end receives low level, the two connecting ends are disconnected; fourth switch S4When the control end receives a high level, the two connecting ends are conducted; fifth switch S5When the control end receives a high level, the two connecting ends are conducted; fourth switch S4When the control end receives low level, the two connecting ends are disconnected; fifth switch S5The two connection terminals are disconnected when the control terminal of the switch receives a low level. However, this is not limited in this application. In other embodiments, the conduction of each switch may also be controlled by a low level.
In an exemplary embodiment, the reset signal may be a pulse signal. However, this is not limited in this application.
Wherein, the fourth switch S in the detection circuit shown in FIG. 34When closed, the third capacitor C can be resetfDThe sixth switch S6When closed, the second capacitor C can be resetf2。
As shown in fig. 3, in the detection circuit provided in the present embodiment, a third capacitor C is introduced for further reducing noisefDAs pseudo-integrating capacitance, and ensure CfD<<Cf2。
Wherein, when RSTA is high level, the third switch S3And a sixth switch S6Closed, fourth switch S4And a fifth switch S5The front-end amplifier is in a pseudo-integral state when the front-end amplifier is disconnected; when RSTA is low, the fourth switch S4And a fifth switch S5Closed, third switch S3And a sixth switch S6And the front-end amplifier is switched off and is in a real integrating state. As a result, only pseudo-integral state memory occursParasitic capacitance C stored in photodiodePDVoltage v of noise onndTransferred to the output of the second operational amplifier OPA2 when truly integrating, the noise voltage at the output of the second operational amplifier OPA2 will become:
wherein, CPDA capacitance value that is a parasitic capacitance of the photodiode; cf2Is the capacitance value of the second capacitor; v. ofndIs the stored noise voltage in the pseudo-integral state.
The closed-loop bandwidth of the front-end amplifier in the pseudo-integral state is as follows:
where GBW is the gain-bandwidth product of the second operational amplifier OPA 2. Thus, based on fig. 2 and 3, v is the same operational amplifiernd<<vniThus, the noise output using the front-end amplifier shown in fig. 3 is much less than the noise output using the front-end amplifier shown in fig. 2.
Fig. 4 is an exemplary diagram of a radiation detector provided in an embodiment of the present application. In the present exemplary embodiment, the radiation detector may include: the device comprises at least one photodiode, at least one channel Front-End amplifier (FE), an Analog-to-Digital Converter (ADC) and a data acquisition module. When the number of the photodiodes is multiple and the number of the front-end amplifiers is multiple, the photodiodes can form a linear array, and the front-end amplifiers are connected with the photodiodes in a one-to-one correspondence manner.
The front-end amplifier is used for converting current signals output by the photodiode into analog voltage signals, the output time division multiplexing of the multichannel front-end amplifier is connected to the high-speed ADC, the ADC is used for converting the analog voltage signals into digital signals, and the data acquisition module is used for acquiring the digital signals and transmitting the digital signals to a computer after preliminary processing.
The circuit structure of the front-end amplifier can be as shown in fig. 2 or fig. 3. However, this is not limited in this application.
In an exemplary embodiment, when the front-end amplifier in fig. 4 is as shown in fig. 2, the output terminal of the first operational amplifier in the front-end amplifier is connected to the input terminal of the ADC, and the output terminal of the ADC is connected to the input terminal of the data acquisition module.
In an exemplary embodiment, when the front-end amplifier in fig. 4 is as shown in fig. 3, the output terminal of the second operational amplifier in the front-end amplifier is connected to the input terminal of the ADC, and the output terminal of the ADC is connected to the input terminal of the data acquisition module.
In an application example, the radiation detector provided by the embodiment can be applied to a security inspection device for X-rays, and is used for reading the X-rays and obtaining a detection image of the X-rays. By adopting the front-end amplifier shown in fig. 2 or fig. 3, the noise of the front-end amplifier can be reduced, the dynamic range of the security inspection equipment can be improved, and the total dose of the X-ray source can be reduced, so that the radiation protection level of the whole security inspection equipment can be reduced; or the detection precision and the resolution of the whole security check equipment can be improved under the condition of not reducing the total dose of the X-ray source.
Claims (5)
1. A detection circuit, comprising: a photodiode and a front-end amplifier;
the front-end amplifier includes: the second operational amplifier, the second capacitor, the third switch, the fourth switch, the fifth switch and the sixth switch;
the anode of the photodiode is connected to the inverting input end of the second operational amplifier; the cathode of the photodiode is grounded; the non-inverting input end of the second operational amplifier is grounded;
two connecting ends of the third switch are respectively connected with the inverting input end of the second operational amplifier and one end of the third capacitor, the other end of the third capacitor is connected with the output end of the second operational amplifier, and two connecting ends of the fourth switch are respectively connected with two ends of the third capacitor;
two connecting ends of the fifth switch are respectively connected with the inverting input end of the second operational amplifier and one end of the second capacitor, the other end of the second capacitor is connected with the output end of the second operational amplifier, and two connecting ends of the sixth switch are respectively connected with two ends of the second capacitor;
the capacitance value of the third capacitor is less than one fourth of the capacitance value of the second capacitor;
when the third switch and the sixth switch are turned on, the fourth switch and the fifth switch are turned off; and when the fourth switch and the fifth switch are turned on, the third switch and the sixth switch are turned off.
2. The detection circuit according to claim 1, wherein when the reset signal is at a high level, the third switch and the sixth switch are turned on, and the fourth switch and the fifth switch are turned off; when the reset signal is at a low level, the third switch and the sixth switch are turned off, and the fourth switch and the fifth switch are turned on.
3. The detection circuit of claim 1, wherein the number of the photodiodes is plural, the number of the front-end amplifiers is plural, and the front-end amplifiers and the photodiodes are connected in a one-to-one correspondence.
4. The detection circuit of claim 1, further comprising: the analog-to-digital converter and the data acquisition module;
the output end of the second operational amplifier is connected with the input end of the analog-to-digital converter, and the output end of the analog-to-digital converter is connected with the input end of the data acquisition module.
5. A radiation detector comprising a detection circuit according to any one of claims 1 to 4.
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JP2010011216A (en) * | 2008-06-27 | 2010-01-14 | Panasonic Corp | Light-receiving amplifier |
CN102460961A (en) * | 2009-06-22 | 2012-05-16 | 浜松光子学株式会社 | Integrating circuit and light-detection device |
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CN101512306A (en) * | 2006-09-06 | 2009-08-19 | 浜松光子学株式会社 | Photodetector |
JP2010011216A (en) * | 2008-06-27 | 2010-01-14 | Panasonic Corp | Light-receiving amplifier |
CN102460961A (en) * | 2009-06-22 | 2012-05-16 | 浜松光子学株式会社 | Integrating circuit and light-detection device |
CN102506903A (en) * | 2011-10-18 | 2012-06-20 | 山东华翼微电子技术有限责任公司 | Photoelectric detection circuit |
CN107710740A (en) * | 2015-07-13 | 2018-02-16 | 夏普株式会社 | Radiation detector |
CN105282460A (en) * | 2015-10-22 | 2016-01-27 | 天津大学 | Enhanced dynamic range reading method and circuit having offset cancellation |
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