CN109541316A - A kind of silicon waveguide Conductivity detection circuit based on locking enlarged structure - Google Patents
A kind of silicon waveguide Conductivity detection circuit based on locking enlarged structure Download PDFInfo
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- CN109541316A CN109541316A CN201811273030.4A CN201811273030A CN109541316A CN 109541316 A CN109541316 A CN 109541316A CN 201811273030 A CN201811273030 A CN 201811273030A CN 109541316 A CN109541316 A CN 109541316A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/08—Measuring resistance by measuring both voltage and current
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/38—Positive-feedback circuit arrangements without negative feedback
Abstract
The invention discloses a kind of silicon waveguide Conductivity detection circuits based on locking enlarged structure, including phase sensitive detector and bandpass filter, the output end of phase sensitive detector is connected with the input terminal of bandpass filter, phase sensitive detector includes first switch, second switch and trans-impedance amplifier, the clock end of first switch is connected with the inversion clock end of second switch and its connecting pin is the clock end of phase sensitive detector, for incoming clock signal, the inversion clock end of first switch is connected with the clock end of second switch and its connecting pin is the inversion clock end of phase sensitive detector, for accessing inverting clock signal, trans-impedance amplifier includes first resistor, second resistance, first capacitor and operational amplifier, advantage is influence of the current signal far from low-frequency flicker noise that can make to indicate silicon waveguide change information, to improve the resolution ratio of silicon waveguide conductance.
Description
Technical field
The present invention relates to a kind of silicon waveguide Conductivity detection circuits, more particularly, to a kind of silicon wave based on locking enlarged structure
Conduction leads detection circuit.
Background technique
The variation of optical device waveguide conductance changes with the variation of incident optical power, real using the variation of waveguide conductance
Existing optical power monitoring.Contactless integrated photon pops one's head in (Contactless Integrated Photonic Probe, CLIPP)
Detection technique achievees the purpose that noninvasive optical power detection using silicon waveguide itself as optical power monitor.
The existing silicon waveguide Conductivity detection circuit realized based on contactless photonic probe detection technique is using traditional
Locking phase enlarged structure is realized.In the silicon waveguide Conductivity detection circuit, the current signal of silicon waveguide conductance change information is indicated
Voltage signal is converted to by trans-impedance amplifier amplification, which with external modulation signal multiplication, completes frequency spectrum migration again,
Noise is filtered out finally by low-pass filter, the voltage signal of the expression conductance change information amplified.But existing silicon
Waveguide Conductivity detection circuit use it is traditional realized based on frequency for the lock-in amplifier structure of 0Hz, for mentioning in the structure
Take the low-pass filter of echo signal frequency be 0Hz place extraction target voltage signal, due to low-frequency flicker noise influence compared with
Greatly, so that the voltage signal precision of obtained expression conductance change information is not high, therefore, silicon waveguide conductance resolution ratio is not high.
Summary of the invention
Technical problem to be solved by the invention is to provide it is a kind of can to avoid the influence of low-frequency flicker noise, resolution ratio compared with
The high silicon waveguide Conductivity detection circuit based on locking enlarged structure.
The technical scheme of the invention to solve the technical problem is: a kind of silicon waveguide based on locking enlarged structure
Conductivity detection circuit, including phase sensitive detector and bandpass filter, the phase sensitive detector have input terminal, clock end, anti-
Phase clock end, the second offset side for accessing the second bias voltage, is used the first offset side for accessing the first bias voltage
It is described in third offset side, the 4th offset side and output end for accessing the 4th bias voltage of access third bias voltage
Bandpass filter there is input terminal and output end, the output end of the phase sensitive detector and the bandpass filter it is defeated
Enter end connection, the phase sensitive detector includes first switch, second switch and trans-impedance amplifier, the first switch and institute
The second switch stated is respectively provided with input, output end, clock end and inversion clock end, the clock end of the first switch and
The inversion clock end of the second switch connects and its connecting pin is the clock end of the phase sensitive detector, when for accessing
The inversion clock end of clock signal, the first switch is connected with the clock end of the second switch and its connecting pin is described
Phase sensitive detector inversion clock end, for accessing inverting clock signal, the trans-impedance amplifier includes first resistor,
Two resistance, first capacitor and operational amplifier, the operational amplifier have positive input terminal, negative input end, the first offset side,
Second offset side, third offset side, the 4th offset side and output end, one end of the first resistor and the operation amplifier
The positive input terminal of device connects and its connecting pin is the positive input terminal of the trans-impedance amplifier, the other end of the first resistor
Ground connection, one end of the second resistance connect with the negative input end of the operational amplifier and its connecting pin for it is described across
The negative input end of impedance amplifier, the other end of the second resistance, one end of the first capacitor and the operation are put
The output end of output end connection and its connecting pin for the trans-impedance amplifier of big device, another termination of the first capacitor
Ground, the first offset side of the operational amplifier are the first offset side of the trans-impedance amplifier, the operation amplifier
Second offset side of device is the second offset side of the trans-impedance amplifier, and the third offset side of the operational amplifier is institute
The third offset side for the trans-impedance amplifier stated, the 4th offset side of the operational amplifier are the of the trans-impedance amplifier
Four offset sides, the input terminal of the first switch is connected with the input terminal of the second switch and its connecting pin is described
The input terminal of phase sensitive detector, the output end of the first switch are connected with the positive input terminal of the trans-impedance amplifier, institute
The output end for the second switch stated is connected with the negative input end of the trans-impedance amplifier, the output end of the trans-impedance amplifier
For the output end of the phase sensitive detector, the first offset side of the trans-impedance amplifier is the of the phase sensitive detector
One offset side, the second offset side of the trans-impedance amplifier are the second offset side of the phase sensitive detector, it is described across
The third offset side of impedance amplifier is the third offset side of the phase sensitive detector, the 4th biasing of the trans-impedance amplifier
End is the 4th offset side of the phase sensitive detector.
The operational amplifier includes the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th MOS
Pipe, the 6th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor, the 9th metal-oxide-semiconductor, the tenth metal-oxide-semiconductor, the 11st metal-oxide-semiconductor, the 12nd metal-oxide-semiconductor,
13rd metal-oxide-semiconductor, the 14th metal-oxide-semiconductor, the 15th metal-oxide-semiconductor and the second capacitor, first metal-oxide-semiconductor, the 2nd MOS
Pipe, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor, the 9th metal-oxide-semiconductor, the tenth metal-oxide-semiconductor, the described the tenth
Four metal-oxide-semiconductors and the 15th metal-oxide-semiconductor are respectively p-type metal-oxide-semiconductor, the third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, described
The 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor, the 11st metal-oxide-semiconductor, the 12nd metal-oxide-semiconductor and the described the 13rd
Metal-oxide-semiconductor is respectively N-type metal-oxide-semiconductor；The grid of first metal-oxide-semiconductor is the negative input end of the operational amplifier, described
The source electrode of first metal-oxide-semiconductor, second metal-oxide-semiconductor source electrode connected with the drain electrode of the 15th metal-oxide-semiconductor, described first
The drain electrode of metal-oxide-semiconductor, the drain electrode of the third metal-oxide-semiconductor are connected with the source electrode of the 5th metal-oxide-semiconductor, second metal-oxide-semiconductor
Grid be the operational amplifier positive input terminal, the drain electrode of second metal-oxide-semiconductor, the leakage of the 4th metal-oxide-semiconductor
Pole is connected with the source electrode of the 6th metal-oxide-semiconductor, the source electrode of the third metal-oxide-semiconductor, the source electrode of the 4th metal-oxide-semiconductor, institute
The source grounding of the source electrode for the 11st metal-oxide-semiconductor stated, the source electrode of the 12nd metal-oxide-semiconductor and the 13rd metal-oxide-semiconductor,
The grid of the third metal-oxide-semiconductor is connected with the grid of the 4th metal-oxide-semiconductor and its connecting pin is the operational amplifier
The first offset side, the grid of the 5th metal-oxide-semiconductor is connected with the grid of the 6th metal-oxide-semiconductor and its connecting pin is described
Operational amplifier the second offset side, the drain electrode of the 5th metal-oxide-semiconductor, the drain electrode of the 7th metal-oxide-semiconductor, described
The grid of seven metal-oxide-semiconductors is connected with the grid of the 8th metal-oxide-semiconductor, the drain electrode of the 6th metal-oxide-semiconductor, the 8th MOS
The drain electrode of pipe, the grid of the 9th metal-oxide-semiconductor, the grid of the 14th metal-oxide-semiconductor and one end of second capacitor
Connection, the source electrode of the 7th metal-oxide-semiconductor, the source electrode of the 8th metal-oxide-semiconductor, the 9th metal-oxide-semiconductor source electrode, described
The source electrode of the source electrode of tenth metal-oxide-semiconductor, the source electrode of the 14th metal-oxide-semiconductor and the 15th metal-oxide-semiconductor connects power supply, described
The drain electrode of the 9th metal-oxide-semiconductor, the drain electrode of the 11st metal-oxide-semiconductor, the 11st metal-oxide-semiconductor grid and the described the tenth
The grid of two metal-oxide-semiconductors connects, and the grid of the tenth metal-oxide-semiconductor is the third offset side of the operational amplifier, described
The drain electrode of tenth metal-oxide-semiconductor, the drain electrode of the 12nd metal-oxide-semiconductor are connected with the grid of the 13rd metal-oxide-semiconductor, and described
The drain electrode of 13 metal-oxide-semiconductors, the drain electrode of the 14th metal-oxide-semiconductor are connected with the other end of second capacitor, and described
The grid of 15 metal-oxide-semiconductors is the 4th offset side of the operational amplifier.In the circuit, operational amplifier is folded using three-level
The output stage that formula cascode structure, the 13rd metal-oxide-semiconductor and the 14th metal-oxide-semiconductor are constituted uses push-pull configuration, and the 14th metal-oxide-semiconductor is same
Shi Zuowei feedforward transconductance grade, for improving gain bandwidth product, the second capacitor is as miller compensation capacitor, the 14th metal-oxide-semiconductor and
Two capacitor collective effects generate a Left half-plane zero point, guarantee the stability of entire operational amplifier.
The first switch includes the 16th metal-oxide-semiconductor and the 17th metal-oxide-semiconductor, and the 16th metal-oxide-semiconductor is N-type MOS
Pipe, the 17th metal-oxide-semiconductor are p-type metal-oxide-semiconductor, the drain electrode of the 16th metal-oxide-semiconductor and the leakage of the 17th metal-oxide-semiconductor
Pole connection and its connecting pin are the input terminal of the first switch, the source electrode and the described the tenth of the 16th metal-oxide-semiconductor
The source electrode of seven metal-oxide-semiconductors connects and its connecting pin is the output end of the first switch, and the grid of the 16th metal-oxide-semiconductor is
The clock end of the first switch, the grid of the 17th metal-oxide-semiconductor are the inversion clock end of the first switch, institute
The circuit structure for the second switch stated is identical as the circuit structure of the first switch.In the circuit, first switch tube and
Two switching tubes are all made of MOS to the form of pipe, it is possible to reduce channel charge injection improves detection accuracy.
The bandpass filter includes the identical bandpass filtering unit of three structures, third capacitor and the 4th capacitor, often
A bandpass filtering unit is respectively provided with positive input terminal, negative input end and output end, by bandpass filtering list described in three
Member is referred to as first band pass filtering unit, the second bandpass filtering unit and third bandpass filtering unit, first band logical
The positive input terminal of filter unit is grounded, the negative input end of the first band pass filtering unit, the second bandpass filtering list
Output end, the negative input end of the third bandpass filtering unit, one end of the 4th capacitor and the third of member
The output end of bandpass filtering unit connects and its connecting pin is the output end of the bandpass filter, the 4th capacitor
The other end ground connection, the output end of the first band pass filtering unit, the second bandpass filtering unit positive input terminal and
One end of the third capacitor connects, the other end ground connection of the third capacitor, the second bandpass filtering unit
Negative input end ground connection, the positive input terminal of the third bandpass filtering unit are the input terminal of the bandpass filter.The electricity
Lu Zhong, bandpass filtering cellular construction is equal to using trsanscondutance amplifier, real by two capacitors and three trsanscondutance amplifier structures
Existing bandpass filter, is easy to get high centre frequency, and it is integrated to be easy on piece simultaneously.
The bandpass filtering unit respectively includes the 18th metal-oxide-semiconductor, the 19th metal-oxide-semiconductor, the 20th metal-oxide-semiconductor, the
21 metal-oxide-semiconductors, the 22nd metal-oxide-semiconductor, the 23rd metal-oxide-semiconductor, the 24th metal-oxide-semiconductor, the 25th metal-oxide-semiconductor, the 26th
Metal-oxide-semiconductor, the 27th metal-oxide-semiconductor and DC source, the 18th metal-oxide-semiconductor, the 19th metal-oxide-semiconductor, the described the 20th
Four metal-oxide-semiconductors, the 25th metal-oxide-semiconductor, the 26th metal-oxide-semiconductor and the 27th metal-oxide-semiconductor are N-type
Metal-oxide-semiconductor, the 20th metal-oxide-semiconductor, the 21st metal-oxide-semiconductor, the 22nd metal-oxide-semiconductor and the described the 20th
Three metal-oxide-semiconductors are p-type metal-oxide-semiconductor；The grid of 18th metal-oxide-semiconductor is the negative input end of the bandpass filtering unit, institute
The source electrode for the 18th metal-oxide-semiconductor stated, the 19th metal-oxide-semiconductor source electrode connected with the drain electrode of the 26th metal-oxide-semiconductor,
The drain electrode of 18th metal-oxide-semiconductor, the drain electrode of the 20th metal-oxide-semiconductor, the grid of the 20th metal-oxide-semiconductor and described
The 22nd metal-oxide-semiconductor grid connection, the grid of the 19th metal-oxide-semiconductor is the negative input of the bandpass filtering unit
End, the drain electrode of the 19th metal-oxide-semiconductor, the drain electrode of the 21st metal-oxide-semiconductor, the 21st metal-oxide-semiconductor grid
Pole is connected with the grid of the 23rd metal-oxide-semiconductor, source electrode, the 21st metal-oxide-semiconductor of the 20th metal-oxide-semiconductor
Source electrode, the source electrode of the 22nd metal-oxide-semiconductor and the source electrode of the 23rd metal-oxide-semiconductor access power supply, it is described
The drain electrode of 22nd metal-oxide-semiconductor, the drain electrode of the 24th metal-oxide-semiconductor, the grid of the 24th metal-oxide-semiconductor and described
The 25th metal-oxide-semiconductor grid connection, the drain electrode of the 23rd metal-oxide-semiconductor and the leakage of the 25th metal-oxide-semiconductor
Pole connection, the source electrode of the 24th metal-oxide-semiconductor, the source electrode of the 26th metal-oxide-semiconductor, the 27th MOS
The source electrode of the source electrode of pipe and the 25th metal-oxide-semiconductor accesses power supply, the grid of the 26th metal-oxide-semiconductor, described
The drain electrode of grid, the 27th metal-oxide-semiconductor of the 27th metal-oxide-semiconductor connected with the DC source.In the circuit, band
Pass filtering unit is respectively by the 18th metal-oxide-semiconductor, the 19th metal-oxide-semiconductor, the 20th metal-oxide-semiconductor, the 21st metal-oxide-semiconductor, the 22nd MOS
Pipe, the 23rd metal-oxide-semiconductor, the 24th metal-oxide-semiconductor, the 25th metal-oxide-semiconductor, the 26th metal-oxide-semiconductor, the 27th metal-oxide-semiconductor and straight
The trsanscondutance amplifier that stream source is constituted is realized, controls trsanscondutance amplifier tail current size with reference to DC source Iref by input, thus
The transconductance value for changing trsanscondutance amplifier, can easily be accommodated the centre frequency and quality factor of bandpass filter.
Compared with the prior art, the advantages of the present invention are as follows constitute silicon waveguide electricity by phase sensitive detector and bandpass filter
Detection circuit is led, phase sensitive detector includes first switch, second switch and trans-impedance amplifier, and trans-impedance amplifier includes the first electricity
Resistance, second resistance, first capacitor and operational amplifier, second resistance are feedback resistance, and first resistor is used for operational amplifier
The ac current signal of positive input terminal be converted into voltage signal, first capacitor is output end load capacitance.Phase sensitive detector and
Bandpass filter is respectively to indicating that the current signal of silicon waveguide conductance variation carries out frequency shift and filtering processing, when input is from phase
When the current signal for indicating silicon waveguide variation of the input terminal input of responsive detectors is the positive half period of a cycle, first switch
It opens, second switch disconnects, and the positive half period of current signal passes through in the period, then amplifies through trans-impedance amplifier positive and converts
For voltage signal, and waveform remains unchanged；When current signal is the negative half-cycle of a cycle, second switch is opened, and first
Switch disconnects, and the negative half-cycle of current signal passes through in the period, is then converted into voltage letter through the amplification of trans-impedance amplifier reverse phase
Number, 180 ° of overturnings occur for waveform phase at this time, and the above process periodically carries out, and complete to examine the phase sensitivity of the current signal of input
Survey and amplification process, filter out noise finally by bandpass filter, and the electricity for indicating the variation of silicon waveguide conductance is extracted in high frequency treatment
Signal is pressed, thus target voltage signal can be made far from the influence of low-frequency flicker noise, to improve the resolution of silicon waveguide conductance
Rate.
Detailed description of the invention
Fig. 1 is the structural principle block diagram of the silicon waveguide Conductivity detection circuit of the invention based on locking enlarged structure；
Fig. 2 is the circuit of the trans-impedance amplifier of the silicon waveguide Conductivity detection circuit of the invention based on locking enlarged structure
Figure；
Fig. 3 is the circuit of the operational amplifier of the silicon waveguide Conductivity detection circuit of the invention based on locking enlarged structure
Figure；
Fig. 4 is the circuit diagram of the first switch of the silicon waveguide Conductivity detection circuit of the invention based on locking enlarged structure；
Fig. 5 is the circuit of the bandpass filter of the silicon waveguide Conductivity detection circuit of the invention based on locking enlarged structure
Figure；
Fig. 6 is the circuit of the bandpass filtering unit of the silicon waveguide Conductivity detection circuit of the invention based on locking enlarged structure
Figure；
Fig. 7 is the trans-impedance amplifier open loop amplitude-frequency of the silicon waveguide Conductivity detection circuit of the invention based on locking enlarged structure
Response and phase versus frequency response charac t figure；
Fig. 8 is the trans-impedance amplifier equivalent inpnt of the silicon waveguide Conductivity detection circuit of the invention based on locking enlarged structure
Reference noise power spectral density；
Fig. 9 is the waveform diagram of the clock signal of the silicon waveguide Conductivity detection circuit of the invention based on locking enlarged structure；
Figure 10 is the wave of the inverting clock signal of the silicon waveguide Conductivity detection circuit of the invention based on locking enlarged structure
Shape figure；
Figure 11 be it is of the invention based on locking enlarged structure the silicon waveguide detected of silicon waveguide Conductivity detection circuit etc.
Imitate circuit diagram；
Figure 12 (a) is the waveform of the electric current Ii of the input silicon waveguide detection circuit of the invention based on locking enlarged structure；
Figure 12 (b) is bandpass filter output voltage in the silicon waveguide detection circuit of the invention based on locking enlarged structure
The waveform of Vop and detection circuit output voltage Vout；
Figure 13 is detection circuit when considering the self noise of the silicon waveguide detection circuit of the invention based on locking enlarged structure
Output voltage Vout carries out DFT analysis chart；
Figure 14 be it is of the invention based on locking enlarged structure silicon waveguide Conductivity detection circuit output voltage change △ V with
Silicon waveguide conductance changes △ G (stepping 0.8pS) relational graph.
Specific embodiment
The present invention will be described in further detail below with reference to the embodiments of the drawings.
Embodiment one: shown in as shown in Figure 1, Figure 2, Fig. 9 and Figure 10, a kind of silicon waveguide Conductivity detection based on locking enlarged structure
Circuit, including phase sensitive detector and bandpass filter, phase sensitive detector have input terminal, clock end, inversion clock end, for connecing
Enter the first offset side of the first bias voltage, the second offset side for accessing the second bias voltage, for accessing third biasing
The third offset side of voltage, the 4th offset side and output end for accessing the 4th bias voltage, bandpass filter have input
End and output end, the output end of phase sensitive detector connected with the input terminal of bandpass filter, phase sensitive detector include first switch,
Second switch and trans-impedance amplifier, first switch and the second switch are respectively provided with input, output end, clock end and inversion clock
End, the clock end of first switch is connected with the inversion clock end of second switch and its connecting pin is the clock end of phase sensitive detector,
For incoming clock signal CK, the inversion clock end of first switch is connected with the clock end of second switch and its connecting pin is phase sensitivity
The inversion clock end of detector, for accessing inverting clock signalTrans-impedance amplifier includes first resistor R1, second resistance
R2, first capacitor C1 and operational amplifier, operational amplifier have positive input terminal, negative input end, the first offset side, the second biasing
End, third offset side, the 4th offset side and output end, one end of first resistor R1 connected with the positive input terminal of operational amplifier and
Its connecting pin is the positive input terminal of trans-impedance amplifier, the other end ground connection of first resistor R1, one end of second resistance R2 and operation
The negative input end of amplifier connects and its connecting pin is the negative input end of trans-impedance amplifier, the other end of second resistance R2, first
One end of capacitor C1 is connected with the output end of operational amplifier and its connecting pin is the output end of trans-impedance amplifier, first capacitor C1
Other end ground connection, the first offset side of operational amplifier is the first offset side of trans-impedance amplifier, the second of operational amplifier
Offset side is the second offset side of trans-impedance amplifier, and the third offset side of operational amplifier is that the third of trans-impedance amplifier biases
End, the 4th offset side of operational amplifier are the 4th offset side of trans-impedance amplifier, the input terminal and second switch of first switch
Input terminal connection and its connecting pin be phase sensitive detector input terminal, the output end of first switch and trans-impedance amplifier it is just defeated
Enter end connection, the output end of second switch is connected with the negative input end of trans-impedance amplifier, and the output end of trans-impedance amplifier is phase sensitivity
The output end of detector, the first offset side of trans-impedance amplifier are the first offset side of phase sensitive detector, the of trans-impedance amplifier
Two offset sides are the second offset side of phase sensitive detector, and the third offset side of trans-impedance amplifier is that the third of phase sensitive detector biases
End, the 4th offset side of trans-impedance amplifier are the 4th offset side of phase sensitive detector.
Embodiment two: the present embodiment is basically the same as the first embodiment, and difference is:
As shown in figure 3, operational amplifier includes the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, third metal-oxide-semiconductor in the present embodiment
M3, the 4th metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6, the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8, the 9th metal-oxide-semiconductor M9,
Ten metal-oxide-semiconductor M10, the 11st metal-oxide-semiconductor M11, the 12nd metal-oxide-semiconductor M12, the 13rd metal-oxide-semiconductor M13, the 14th metal-oxide-semiconductor M14, the 15th
Metal-oxide-semiconductor M15 and the second capacitor C2, the first metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2, the 7th metal-oxide-semiconductor M7, the 8th metal-oxide-semiconductor M8, the 9th MOS
Pipe M9, the tenth metal-oxide-semiconductor M10, the 14th metal-oxide-semiconductor M14 and the 15th metal-oxide-semiconductor M15 are respectively p-type metal-oxide-semiconductor, third metal-oxide-semiconductor M3,
Four metal-oxide-semiconductor M4, the 5th metal-oxide-semiconductor M5, the 6th metal-oxide-semiconductor M6, the 11st metal-oxide-semiconductor M11, the 12nd metal-oxide-semiconductor M12 and the 13rd metal-oxide-semiconductor
M13 is respectively N-type metal-oxide-semiconductor；The grid of first metal-oxide-semiconductor M1 be operational amplifier negative input end, the source electrode of the first metal-oxide-semiconductor M1,
The drain electrode connection of the source electrode of second metal-oxide-semiconductor M2 and the 15th metal-oxide-semiconductor M15, the drain electrode of the first metal-oxide-semiconductor M1, the leakage of third metal-oxide-semiconductor M3
Pole is connected with the source electrode of the 5th metal-oxide-semiconductor M5, and the grid of the second metal-oxide-semiconductor M2 is the positive input terminal of operational amplifier, the second metal-oxide-semiconductor M2
Drain electrode, the 4th metal-oxide-semiconductor M4 drain electrode connected with the source electrode of the 6th metal-oxide-semiconductor M6, source electrode, the 4th metal-oxide-semiconductor M4 of third metal-oxide-semiconductor M3
Source electrode, the 11st metal-oxide-semiconductor M11 source electrode, the source electrode of the 12nd metal-oxide-semiconductor M12 and the source grounding of the 13rd metal-oxide-semiconductor M13,
The grid of third metal-oxide-semiconductor M3 and the grid of the 4th metal-oxide-semiconductor M4 connect and its connecting pin is the first offset side of operational amplifier, the
The connection of the grid of the grid of five metal-oxide-semiconductor M5 and the 6th metal-oxide-semiconductor M6 and its connecting pin are the second offset side of operational amplifier, the 5th
The drain electrode of metal-oxide-semiconductor M5, the drain electrode of the 7th metal-oxide-semiconductor M7, the grid connection of the grid of the 7th metal-oxide-semiconductor M7 and the 8th metal-oxide-semiconductor M8, the 6th
The drain electrode of metal-oxide-semiconductor M6, the drain electrode of the 8th metal-oxide-semiconductor M8, the grid of the 9th metal-oxide-semiconductor M9, the 14th metal-oxide-semiconductor M14 grid and second
One end of capacitor C2 connects, the source electrode of the 7th metal-oxide-semiconductor M7, the source electrode of the 8th metal-oxide-semiconductor M8, the source electrode of the 9th metal-oxide-semiconductor M9, the tenth
The source electrode of the source electrode of metal-oxide-semiconductor M10, the source electrode of the 14th metal-oxide-semiconductor M14 and the 15th metal-oxide-semiconductor M15 meets power vd D, the 9th MOS
The drain electrode of pipe M9, the drain electrode of the 11st metal-oxide-semiconductor M11, the grid of the 11st metal-oxide-semiconductor M11 and the 12nd metal-oxide-semiconductor M12 grid connect
It connects, the grid of the tenth metal-oxide-semiconductor M10 is the third offset side of operational amplifier, the drain electrode of the tenth metal-oxide-semiconductor M10, the 12nd metal-oxide-semiconductor
The drain electrode of M12 is connected with the grid of the 13rd metal-oxide-semiconductor M13, the drain electrode of the 13rd metal-oxide-semiconductor M13, the drain electrode of the 14th metal-oxide-semiconductor M14
It is connected with the other end of the second capacitor C2, the grid of the 15th metal-oxide-semiconductor M15 is the 4th offset side of operational amplifier.
As shown in figure 4, in the present embodiment, first switch includes the 16th metal-oxide-semiconductor M16 and the 17th metal-oxide-semiconductor M17, the tenth
Six metal-oxide-semiconductor M16 are N-type metal-oxide-semiconductor, and the 17th metal-oxide-semiconductor M17 is p-type metal-oxide-semiconductor, the drain electrode of the 16th metal-oxide-semiconductor M16 and the 17th MOS
The input terminal of drain electrode connection and its connecting pin for first switch of pipe M17, the source electrode and the 17th metal-oxide-semiconductor of the 16th metal-oxide-semiconductor M16
The source electrode of M17 connects and its connecting pin is the output end of first switch, the grid of the 16th metal-oxide-semiconductor M16 be first switch when
The grid of Zhong Duan, the 17th metal-oxide-semiconductor M17 are the inversion clock end of first switch, the circuit structure and first switch of second switch
Circuit structure it is identical.
As shown in figure 5, bandpass filter includes the identical bandpass filtering unit of three structures, third electricity in the present embodiment
Hold C3 and the 4th capacitor C4, each bandpass filtering unit is respectively provided with positive input terminal, negative input end and output end, by three band logicals
Filter unit is referred to as first band pass filtering unit, the second bandpass filtering unit and third bandpass filtering unit, the first band logical
The positive input terminal of filter unit is grounded, the negative input end of first band pass filtering unit, the output end of the second bandpass filtering unit, the
The negative input end of three bandpass filtering units, one end of the 4th capacitor C4 are connected with the output end of third bandpass filtering unit and it connects
Connect the output end that end is bandpass filter, the other end ground connection of the 4th capacitor C4, the output end of first band pass filtering unit, second
The positive input terminal of bandpass filtering unit is connected with one end of third capacitor C3, the other end ground connection of third capacitor C3, the second band logical
The negative input end of filter unit is grounded, and the positive input terminal of third bandpass filtering unit is the input terminal of bandpass filter.
As shown in fig. 6, each bandpass filtering unit respectively includes the 18th metal-oxide-semiconductor M18, the 19th MOS in the present embodiment
Pipe M19, the 20th metal-oxide-semiconductor M20, the 21st metal-oxide-semiconductor M21, the 22nd metal-oxide-semiconductor M22, the 23rd metal-oxide-semiconductor M23, second
14 metal-oxide-semiconductor M24, the 25th metal-oxide-semiconductor M25, the 26th metal-oxide-semiconductor M26, the 27th metal-oxide-semiconductor M27 and DC source Iref,
18th metal-oxide-semiconductor M18, the 19th metal-oxide-semiconductor M19, the 24th metal-oxide-semiconductor M24, the 25th metal-oxide-semiconductor M25, the 26th metal-oxide-semiconductor
M26 and the 27th metal-oxide-semiconductor M27 is N-type metal-oxide-semiconductor, the 20th metal-oxide-semiconductor M20, the 21st metal-oxide-semiconductor M21, the 22nd MOS
Pipe M22 and the 23rd metal-oxide-semiconductor M23 is p-type metal-oxide-semiconductor；The grid of 18th metal-oxide-semiconductor M18 is that bearing for bandpass filtering unit is defeated
Entering end, the drain electrode of the source electrode of the 18th metal-oxide-semiconductor M18, the source electrode of the 19th metal-oxide-semiconductor M19 and the 26th metal-oxide-semiconductor M26 connects, the
The drain electrode of 18 metal-oxide-semiconductor M18, the drain electrode of the 20th metal-oxide-semiconductor M20, the 20th metal-oxide-semiconductor M20 grid and the 22nd metal-oxide-semiconductor
The grid of M22 connects, and the grid of the 19th metal-oxide-semiconductor M19 is the negative input end of bandpass filtering unit, the leakage of the 19th metal-oxide-semiconductor M19
Pole, the drain electrode of the 21st metal-oxide-semiconductor M21, the grid connection of the grid of the 21st metal-oxide-semiconductor M21 and the 23rd metal-oxide-semiconductor M23,
The source electrode of 20th metal-oxide-semiconductor M20, the source electrode of the 21st metal-oxide-semiconductor M21, the 22nd metal-oxide-semiconductor M22 source electrode and the 23rd
The source electrode of metal-oxide-semiconductor M23 accesses power vd D, the drain electrode of the 22nd metal-oxide-semiconductor M22, the drain electrode of the 24th metal-oxide-semiconductor M24,
The grid connection of the grid and the 25th metal-oxide-semiconductor M25 of 24 metal-oxide-semiconductor M24, the drain electrode and second of the 23rd metal-oxide-semiconductor M23
The drain electrode of 15 metal-oxide-semiconductor M25 connects, the source electrode of the 24th metal-oxide-semiconductor M24, the source electrode of the 26th metal-oxide-semiconductor M26, the 27th
The source electrode of the source electrode of metal-oxide-semiconductor M27 and the 25th metal-oxide-semiconductor M25 access power vd D, the grid of the 26th metal-oxide-semiconductor M26,
The drain electrode of the grid, the 27th metal-oxide-semiconductor M27 of 27 metal-oxide-semiconductor M27 is connected with DC source Iref.
The trans-impedance amplifier open loop amplitude-frequency response of silicon waveguide Conductivity detection circuit based on locking enlarged structure of the invention
With phase versus frequency response charac t as shown in fig. 7, known to analysis chart 7: in load capacitance C1When=3pF, the open-loop gain of trans-impedance amplifier
Bandwidth product is 200.8MHz, and phase margin is 66.8 °, while the gain margin of trans-impedance amplifier is 3.2dB, ensure that and puts across resistance
The stability of big device.
The trans-impedance amplifier equivalent inpnt reference of silicon waveguide Conductivity detection circuit based on locking enlarged structure of the invention
Noise power spectral density is as shown in figure 8, known to analysis chart 8: the input reference noise of trans-impedance amplifier is 13.8pA/Bandwidth
Interior RMS (Root Mean Square, RMS) noise is 14.2nA.
Silicon waveguide is detected using silicon waveguide Conductivity detection circuit of the invention, wherein detected silicon waveguide
Equivalent circuit diagram is as shown in figure 11, and it be frequency is the sine voltage signal that 1MHz amplitude is 1V that Vo, which is external source, in Figure 11,
C5 is for the coupled capacitor between two electrodes of detection, and C6 and C7 are two electrodes and the silicon dioxide layer that silicon waveguide surface covers
Between hand capacity, GWGIndicate the conductance of silicon waveguide.Input the silicon waveguide detection electricity of the invention based on locking enlarged structure
Shown in waveform such as Figure 12 (a) of the electric current Ii on road, bandpass filter output voltage Vop and of the invention based on locking enlarged structure
Silicon waveguide detection circuit output voltage Vout waveform such as Figure 12 (b) shown in.Consider of the invention based on locking enlarged structure
Silicon waveguide detection circuit self noise when, to it is of the invention based on locking enlarged structure silicon waveguide detection circuit output voltage
Vout carries out DFT analysis, as a result as shown in figure 13, it can be seen that harmonic component of the Vout waveform at 2MHz is 26mV.This hair
The output voltage of the bright silicon waveguide Conductivity detection circuit based on locking enlarged structure changes with silicon waveguide conductance variation relation such as
Shown in Figure 14, wherein the step-length of waveguide variation is 0.8pS.Known to analysis chart 14: when considering the self noise of detection circuit, Δ V
As the change of Δ G changes linearly, the ideal situation when self noise for not considering detection circuit is approached.In the work of 100MHz
In bandwidth, the resolution ratio that silicon waveguide Conductivity detection circuit of the invention detects silicon waveguide conductance is 0.8pS.
Claims (5)
1. a kind of silicon waveguide Conductivity detection circuit based on locking enlarged structure, including phase sensitive detector and bandpass filter, institute
The phase sensitive detector stated have input terminal, clock end, inversion clock end, the first offset side for accessing the first bias voltage,
For accessing the second offset side of the second bias voltage, the third offset side for accessing third bias voltage, for accessing the
The 4th offset side and output end of four bias voltages, the bandpass filter have input terminal and output end, the phase sensitivity
The output end of detector is connected with the input terminal of the bandpass filter, it is characterised in that the phase sensitive detector includes the
One switch, second switch and trans-impedance amplifier, the first switch and the second switch are respectively provided with input terminal, output
End, clock end and inversion clock end, the clock end of the first switch are connected with the inversion clock end of the second switch
And its connecting pin is the clock end of the phase sensitive detector, incoming clock signal is used for, when the reverse phase of the first switch
Zhong Duan is connected with the clock end of the second switch and its connecting pin is the inversion clock end of the phase sensitive detector, is used for
Inverting clock signal is accessed, the trans-impedance amplifier includes first resistor, second resistance, first capacitor and operational amplifier,
The operational amplifier has positive input terminal, negative input end, the first offset side, the second offset side, third offset side, the 4th partially
End and output end are set, one end of the first resistor is connected with the positive input terminal of the operational amplifier and its connecting pin is
The positive input terminal of the trans-impedance amplifier, the first resistor the other end ground connection, one end of the second resistance and
The negative input end of the operational amplifier connects and its connecting pin is the negative input end of the trans-impedance amplifier, and described the
The other end of two resistance, the first capacitor one end connected with the output end of the operational amplifier and its connecting pin is
The output end of the trans-impedance amplifier, the other end ground connection of the first capacitor, the first of the operational amplifier is partially
The first offset side that end is the trans-impedance amplifier is set, the second offset side of the operational amplifier is put to be described across resistance
Second offset side of big device, the third offset side of the operational amplifier are the third offset side of the trans-impedance amplifier,
4th offset side of the operational amplifier be the trans-impedance amplifier the 4th offset side, the first switch it is defeated
Enter end connected with the input terminal of the second switch and its connecting pin for the phase sensitive detector input terminal, described the
The output end of one switch is connected with the positive input terminal of the trans-impedance amplifier, the output end of the second switch and described
The negative input end of trans-impedance amplifier connects, and the output end of the trans-impedance amplifier is the output end of the phase sensitive detector,
First offset side of the trans-impedance amplifier is the first offset side of the phase sensitive detector, the trans-impedance amplifier
Second offset side is the second offset side of the phase sensitive detector, and the third offset side of the trans-impedance amplifier is described
The third offset side of phase sensitive detector, the 4th offset side of the trans-impedance amplifier be the phase sensitive detector the 4th partially
Set end.
2. a kind of silicon waveguide Conductivity detection circuit based on locking enlarged structure according to claim 1, it is characterised in that
The operational amplifier includes the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th MOS
Pipe, the 7th metal-oxide-semiconductor, the 8th metal-oxide-semiconductor, the 9th metal-oxide-semiconductor, the tenth metal-oxide-semiconductor, the 11st metal-oxide-semiconductor, the 12nd metal-oxide-semiconductor, the 13rd MOS
Pipe, the 14th metal-oxide-semiconductor, the 15th metal-oxide-semiconductor and the second capacitor, first metal-oxide-semiconductor, second metal-oxide-semiconductor, described
Seven metal-oxide-semiconductors, the 8th metal-oxide-semiconductor, the 9th metal-oxide-semiconductor, the tenth metal-oxide-semiconductor, the 14th metal-oxide-semiconductor and institute
The 15th metal-oxide-semiconductor stated is respectively p-type metal-oxide-semiconductor, the third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th MOS
Pipe, the 6th metal-oxide-semiconductor, the 11st metal-oxide-semiconductor, the 12nd metal-oxide-semiconductor and the 13rd metal-oxide-semiconductor difference
For N-type metal-oxide-semiconductor；
The grid of first metal-oxide-semiconductor be the operational amplifier negative input end, the source electrode of first metal-oxide-semiconductor,
The source electrode of second metal-oxide-semiconductor is connected with the drain electrode of the 15th metal-oxide-semiconductor, the drain electrode of first metal-oxide-semiconductor, described
The drain electrode of third metal-oxide-semiconductor connected with the source electrode of the 5th metal-oxide-semiconductor, the grid of second metal-oxide-semiconductor is the fortune
Calculate the positive input terminal of amplifier, the drain electrode of second metal-oxide-semiconductor, the drain electrode of the 4th metal-oxide-semiconductor and the 6th MOS
The source electrode of pipe connects, the source electrode of the third metal-oxide-semiconductor, the source electrode of the 4th metal-oxide-semiconductor, the 11st metal-oxide-semiconductor
The source grounding of source electrode, the source electrode of the 12nd metal-oxide-semiconductor and the 13rd metal-oxide-semiconductor, the third metal-oxide-semiconductor
Grid is connected with the grid of the 4th metal-oxide-semiconductor and its connecting pin is the first offset side of the operational amplifier, described
The grid of the 5th metal-oxide-semiconductor connected with the grid of the 6th metal-oxide-semiconductor and its connecting pin is the of the operational amplifier
Two offset sides, the drain electrode of the 5th metal-oxide-semiconductor, the drain electrode of the 7th metal-oxide-semiconductor, the 7th metal-oxide-semiconductor grid and
The grid of 8th metal-oxide-semiconductor connects, the drain electrode of the 6th metal-oxide-semiconductor, the drain electrode of the 8th metal-oxide-semiconductor, described
The grid of 9th metal-oxide-semiconductor, the 14th metal-oxide-semiconductor grid connected with one end of second capacitor, the described the 7th
The source of the source electrode of metal-oxide-semiconductor, the source electrode of the 8th metal-oxide-semiconductor, the source electrode of the 9th metal-oxide-semiconductor, the tenth metal-oxide-semiconductor
The source electrode of pole, the source electrode of the 14th metal-oxide-semiconductor and the 15th metal-oxide-semiconductor connects power supply, the 9th metal-oxide-semiconductor
Drain electrode, the drain electrode of the 11st metal-oxide-semiconductor, the grid of the 11st metal-oxide-semiconductor and the grid of the 12nd metal-oxide-semiconductor
Connection, the grid of the tenth metal-oxide-semiconductor are the third offset side of the operational amplifier, the leakage of the tenth metal-oxide-semiconductor
The drain electrode of pole, the 12nd metal-oxide-semiconductor is connected with the grid of the 13rd metal-oxide-semiconductor, the leakage of the 13rd metal-oxide-semiconductor
The drain electrode of pole, the 14th metal-oxide-semiconductor is connected with the other end of second capacitor, the grid of the 15th metal-oxide-semiconductor
Extremely the 4th offset side of the operational amplifier.
3. a kind of waveguide Conductivity detection circuit based on locking enlarged structure according to claim 1, it is characterised in that institute
The first switch stated includes the 16th metal-oxide-semiconductor and the 17th metal-oxide-semiconductor, and the 16th metal-oxide-semiconductor is N-type metal-oxide-semiconductor, and described the
17 metal-oxide-semiconductors are p-type metal-oxide-semiconductor, and the drain electrode of the 16th metal-oxide-semiconductor is connected with the drain electrode of the 17th metal-oxide-semiconductor and it
Connecting pin is the input terminal of the first switch, the source electrode of the 16th metal-oxide-semiconductor and the source of the 17th metal-oxide-semiconductor
Pole connection and its connecting pin are the output end of the first switch, and the grid of the 16th metal-oxide-semiconductor is described first
The clock end of switch, the grid of the 17th metal-oxide-semiconductor are the inversion clock end of the first switch, and described second opens
The circuit structure of pass is identical as the circuit structure of the first switch.
4. a kind of waveguide Conductivity detection circuit based on locking enlarged structure according to claim 1, it is characterised in that institute
The bandpass filter stated includes the identical bandpass filtering unit of three structures, third capacitor and the 4th capacitor, each band
Pass filtering unit is respectively provided with positive input terminal, negative input end and output end, and bandpass filtering unit described in three is referred to as
First band pass filtering unit, the second bandpass filtering unit and third bandpass filtering unit, the first band pass filtering unit
Positive input terminal ground connection, the negative input end of the first band pass filtering unit, the second bandpass filtering unit output end,
The negative input end of the third bandpass filtering unit, one end of the 4th capacitor and the third bandpass filtering unit
Output end connection and its connecting pin be the bandpass filter output end, the 4th capacitor the other end ground connection,
The positive input terminal and the third electricity of the output end of the first band pass filtering unit, the second bandpass filtering unit
One end of appearance connects, the other end ground connection of the third capacitor, the negative input end ground connection of the second bandpass filtering unit,
The positive input terminal of the third bandpass filtering unit is the input terminal of the bandpass filter.
5. a kind of waveguide Conductivity detection circuit based on locking enlarged structure according to claim 4, it is characterised in that every
A bandpass filtering unit respectively includes the 18th metal-oxide-semiconductor, the 19th metal-oxide-semiconductor, the 20th metal-oxide-semiconductor, the 21st MOS
Pipe, the 22nd metal-oxide-semiconductor, the 23rd metal-oxide-semiconductor, the 24th metal-oxide-semiconductor, the 25th metal-oxide-semiconductor, the 26th metal-oxide-semiconductor, second
17 metal-oxide-semiconductors and DC source, the 18th metal-oxide-semiconductor, the 19th metal-oxide-semiconductor, the 24th metal-oxide-semiconductor, institute
The 25th metal-oxide-semiconductor, the 26th metal-oxide-semiconductor and the 27th metal-oxide-semiconductor stated are N-type metal-oxide-semiconductor, described
20th metal-oxide-semiconductor, the 21st metal-oxide-semiconductor, the 22nd metal-oxide-semiconductor and the 23rd metal-oxide-semiconductor are P
Type metal-oxide-semiconductor；
The grid of 18th metal-oxide-semiconductor is the negative input end of the bandpass filtering unit, the 18th metal-oxide-semiconductor
Source electrode, the 19th metal-oxide-semiconductor source electrode connected with the drain electrode of the 26th metal-oxide-semiconductor, the 18th metal-oxide-semiconductor
Drain electrode, the drain electrode of the 20th metal-oxide-semiconductor, the grid of the 20th metal-oxide-semiconductor and the 22nd metal-oxide-semiconductor
Grid connection, the grid of the 19th metal-oxide-semiconductor are the negative input end of the bandpass filtering unit, the described the 19th
The drain electrode of metal-oxide-semiconductor, the drain electrode of the 21st metal-oxide-semiconductor, the 21st metal-oxide-semiconductor grid and the described the 20th
The grids of three metal-oxide-semiconductors connects, the source electrode of the 20th metal-oxide-semiconductor, the source electrode of the 21st metal-oxide-semiconductor, described the
The source electrode of the source electrode of 22 metal-oxide-semiconductors and the 23rd metal-oxide-semiconductor accesses power supply, the 22nd metal-oxide-semiconductor
Drain electrode, the drain electrode of the 24th metal-oxide-semiconductor, the 24th metal-oxide-semiconductor grid and the 25th metal-oxide-semiconductor
Grid connection, the drain electrode of the 23rd metal-oxide-semiconductor connects with the drain electrode of the 25th metal-oxide-semiconductor, described the
The source electrode of 24 metal-oxide-semiconductors, the source electrode of the 26th metal-oxide-semiconductor, the source electrode of the 27th metal-oxide-semiconductor and described
The source electrode of 25th metal-oxide-semiconductor accesses power supply, the grid of the 26th metal-oxide-semiconductor, the 27th metal-oxide-semiconductor
The drain electrode of grid, the 27th metal-oxide-semiconductor is connected with the DC source.
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