CN102739174A - Trans-conductance amplifier, resistor, inductor and filter - Google Patents

Abstract

The invention discloses a trans-conductance amplifier, a resistor, an inductor and a filter. The trans-conductance amplifier consists of two groups of sub trans-conductance amplifiers, wherein one group of sub trans-conductance amplifiers consists of a first P-channel metal oxide semiconductor (PMOS) tube M1, a second PMOS tube, a third PMOS tube, a fourth PMOS tube, a fifth N-channel metal oxide semiconductor (NMOS) tube, a sixth NMOS tube, a ninth NMOS tube, a tenth NMOS tube, an eleventh NMOS tube, a twelfth NMOS tube, a fifteenth NMOS tube, a sixteenth NMOS tube, a seventeenth NMOS tube and an eighteenth NMOS tube; the second group of sub trans-conductance amplifiers consists of a seventh NMOS tube, an eighth NMOS tube, a thirteenth NMOS tube, a fourteenth NMOS tube, a nineteenth NMOS tube and a twentieth NMOS tube; and output ends of the two groups of amplifiers are in cross connection, so the third harmonic of a first sub trans-conductance amplifier can be eliminated in a current subtraction mode, the low power consumption and high linearity of the trans-conductance amplifier are realized, the resistor and the inductor are simulated by the trans-conductance amplifier, and low power consumption and high linearity can be realized by a circuit which consists of the resistor and/or the inductor.

Description

A kind of trsanscondutance amplifier, resistance, inductance and filter

Technical field

The application relates to circuit field, relates in particular to a kind of trsanscondutance amplifier, resistance, inductance and filter.

Background technology

Along with the communication technology; Especially the develop rapidly of mobile communication technology and computing technique; As a key modules in the modern receiver especially zero intermediate frequency receiver, mutual conductance-electric capacity (Gm-C) active filter can carry out the Filtering Processing of signal after frequency mixer, for back grade variable gain amplifier provides scattering frequency spectrum less signal; Can be effectively at variable gain amplifier (VGA; Variable Gain Amplifier), analog/digital converter (ADC, Analog-to-Digital Converter) preliminary treatment signal before, can prevent the variable gain amplifier of back level again because out of band signal is excessive and saturated.

In the mobile digital video broadcast system, be positioned at the Gm-C filter of receiver intermediate-frequency section, need to handle bigger input signal, require filter under the very low situation of power consumption, to guarantee higher linearity.

Summary of the invention

In view of this, the technical problem that the application will solve is, a kind of trsanscondutance amplifier, resistance, inductance and filter are provided, and can make filter under the very low situation of power consumption, guarantee higher linearity.

For this reason, the application embodiment adopts following technical scheme:

A kind of trsanscondutance amplifier comprises:

The grid of the grid of the one PMOS pipe and the 2nd PMOS pipe connects the positive bias voltage end of trsanscondutance amplifier;

The grid of the 3rd PMOS pipe is connected with the grid of the 4th PMOS pipe, and connects the common-mode feedback voltage end of trsanscondutance amplifier;

The drain electrode of the drain electrode of the source electrode of the source electrode of the source electrode of the source electrode of the one PMOS pipe, the 2nd PMOS pipe, the 3rd PMOS pipe, the 4th PMOS pipe, the 9th NMOS pipe and the tenth NMOS pipe connects the power voltage terminal of trsanscondutance amplifier;

The drain electrode of the one PMOS pipe connects the drain electrode of the grid and the 11 NMOS pipe of the 9th NMOS pipe respectively; The drain electrode of the 3rd PMOS pipe is connected the negative output of trsanscondutance amplifier with the drain electrode of the 5th NMOS pipe; The drain electrode of the 4th PMOS pipe is connected the positive output end of trsanscondutance amplifier with the drain electrode of the 6th NMOS pipe;

The drain electrode of the 2nd PMOS pipe connects the drain electrode of the grid and the 12 NMOS pipe of the tenth NMOS pipe respectively; The drain and gate of the grid of the source electrode of the source electrode of the 5th NMOS pipe, the tenth NMOS pipe, the 16 NMOS pipe, the 18 NMOS pipe connects; The grid of the grid of the source electrode of the source electrode of the 6th NMOS pipe, the 9th NMOS pipe, the 15 NMOS pipe, the 17 NMOS pipe is connected with drain electrode;

The source electrode of the 11 NMOS pipe connects the drain electrode of the 15 NMOS pipe; The source electrode of the 12 NMOS pipe connects the drain electrode of the 16 NMOS pipe;

The source electrode of the source electrode of the source electrode of the source electrode of the 15 NMOS pipe, the 16 NMOS pipe, the 17 NMOS pipe and the 18 NMOS pipe connects;

The grid of the grid of the 11 NMOS pipe and the 5th NMOS pipe all connects the normal phase input end of trsanscondutance amplifier; The grid of the grid of the 6th NMOS pipe and the 12 NMOS pipe all connects the negative-phase input of trsanscondutance amplifier.

Also comprise:

The drain electrode of the drain electrode of the 7th NMOS pipe and the 8th NMOS pipe is connected with the source electrode of PMOS pipe; The grid of the 7th NMOS pipe connects the normal phase input end of trsanscondutance amplifier; The grid of the 8th NMOS pipe connects the negative-phase input of trsanscondutance amplifier; The source electrode of the 7th NMOS pipe connects the drain electrode of the grid and the 19 NMOS pipe of the 13 NMOS pipe respectively; The source electrode of the 8th NMOS pipe connects the drain electrode of the grid and the 20 NMOS pipe of the 14 NMOS pipe respectively;

The grid of the grid of the 19 NMOS pipe and the 20 NMOS pipe all connects the negative bias voltage end of trsanscondutance amplifier;

The drain electrode of the 13 NMOS pipe connects the drain electrode of the 5th NMOS pipe; The drain electrode of the 14 NMOS pipe connects the drain electrode of the 6th NMOS pipe; The source electrode of the source electrode of the source electrode of the source electrode of the 13 NMOS pipe, the 14 NMOS pipe, the 19 NMOS pipe and the 20 NMOS pipe all connects the source electrode of the 15 NMOS pipe.

Also comprise:

The source electrode of the source electrode of the 21 PMOS pipe and the 22 PMOS pipe connects the supply voltage input of trsanscondutance amplifier; The grid of the 21 PMOS pipe is connected with the grid of the 22 PMOS pipe;

The drain electrode of the 21 PMOS pipe connects the common-mode feedback voltage end of trsanscondutance amplifier; And; Connect the grid that the 21 PMOS manages through first resistance and first electric capacity, and, the drain electrode of the 23 NMOS pipe and the drain electrode of the 24 NMOS pipe connected respectively;

The drain electrode of the 22 PMOS pipe connects the grid of the 22 PMOS pipe, the drain electrode of the 25 NMOS pipe and the drain electrode of the 26 NMOS pipe;

The grid of the 23 NMOS pipe connects the positive output end of trsanscondutance amplifier, and the grid of the 24 NMOS pipe is connected reference voltage end with the grid of the 25 NMOS pipe; The grid of the 26 NMOS pipe connects the negative output of trsanscondutance amplifier;

The drain electrode of the source electrode of the source electrode of the 23 NMOS pipe, the 24 NMOS pipe, the 27 NMOS pipe connects; The drain electrode of the source electrode of the source electrode of the 25 NMOS pipe, the 26 NMOS pipe, the 28 NMOS pipe connects;

The grid of the 27 NMOS pipe is connected negative bias voltage end with the grid of the 28 NMOS pipe; The source ground of the source electrode of the 27 NMOS pipe and the 28 NMOS pipe.

A kind of resistance comprises claim 1 or 2 described trsanscondutance amplifiers, wherein,

The negative output of trsanscondutance amplifier is connected with the common-mode feedback voltage end of trsanscondutance amplifier;

The positive output end of trsanscondutance amplifier is connected with the negative-phase input of trsanscondutance amplifier, and the tie point of this connection is as first end of resistance;

The negative-phase input of trsanscondutance amplifier is as second end of resistance.

A kind of resistance comprises the described trsanscondutance amplifier of claim 3, wherein,

The normal phase input end of trsanscondutance amplifier is connected with the negative output of trsanscondutance amplifier, and the tie point of this connection is as first end of said resistance;

The negative-phase input of trsanscondutance amplifier is connected with the positive output end of trsanscondutance amplifier, and the tie point of this connection is as second end of said resistance.

A kind of resistance comprises two claims 1 or 2 described trsanscondutance amplifiers, is respectively first trsanscondutance amplifier and second trsanscondutance amplifier, wherein,

The negative output of first trsanscondutance amplifier is connected with the common-mode feedback voltage end of first trsanscondutance amplifier; The negative output of second trsanscondutance amplifier is connected with the common-mode feedback voltage end of second trsanscondutance amplifier;

The positive output end of first trsanscondutance amplifier is as first end of resistance, and the normal phase input end of first trsanscondutance amplifier is as second end of resistance;

The positive output end of the normal phase input end of the positive output end of first trsanscondutance amplifier, second trsanscondutance amplifier and second trsanscondutance amplifier interconnects; The negative-phase input of the normal phase input end of the positive output end of the negative-phase input of second trsanscondutance amplifier, second trsanscondutance amplifier, first trsanscondutance amplifier, first trsanscondutance amplifier interconnects.

A kind of inductance comprises two claims 1 or 2 described trsanscondutance amplifiers, is respectively first trsanscondutance amplifier and second trsanscondutance amplifier, wherein,

The negative output of first trsanscondutance amplifier is connected with the common-mode feedback voltage end of first trsanscondutance amplifier; The negative output of second trsanscondutance amplifier is connected with the common-mode feedback voltage end of second trsanscondutance amplifier;

First end of inductance passes through second capacity earth, and is connected with the positive output end of first trsanscondutance amplifier, the normal phase input end of second trsanscondutance amplifier respectively; Second end of inductance is connected with the normal phase input end of first trsanscondutance amplifier, the positive output end of second trsanscondutance amplifier respectively;

The negative-phase input ground connection of first trsanscondutance amplifier, the negative-phase input ground connection of second trsanscondutance amplifier.

A kind of filter comprises said trsanscondutance amplifier, and/or, said resistance, and/or, said inductance.

Technique effect analysis for technique scheme is following:

The application's trsanscondutance amplifier adopts two groups of sub-trsanscondutance amplifiers to constitute; Wherein one group of sub-trsanscondutance amplifier is made up of PMOS pipe M1, the 2nd PMOS pipe, the 3rd PMOS pipe, the 4th PMOS pipe, the 5th NMOS pipe, the 6th NMOS pipe, the 9th NMOS pipe to the 12 NMOS pipe, the 15 NMOS pipe to the 18 NMOS pipe; Second group of sub-trsanscondutance amplifier by the 7th NMOS manage, the 8th NMOS pipe, the 13 NMOS pipe, the 14 NMOS pipe, the 19 NMOS pipe, the 20 NMOS pipe form; The output interconnection of two groups of amplifiers; The main span that second group of sub-trsanscondutance amplifier is first group of sub-trsanscondutance amplifier is led and is managed the three order harmonics items that an opposite in sign is provided to managing the 5th NMOS pipe with the 6th NMOS; Thereby the mode that can utilize current subtraction is eliminated the cubic term harmonic wave of the first sub-trsanscondutance amplifier, thereby realizes the low-power consumption high linearity of the said trsanscondutance amplifier of the application; And then the filter that comprises said trsanscondutance amplifier also can obtain higher linearity under situation low in energy consumption.

Description of drawings

Fig. 1 is the application's trsanscondutance amplifier first embodiment sketch map;

Fig. 2 is the application's trsanscondutance amplifier second embodiment sketch map;

Fig. 3 is the application's common mode feedback circuit structural representation;

Fig. 4 is the application's resistance first embodiment sketch map;

Fig. 5 is the application's resistance second embodiment sketch map;

Fig. 6 is the first embodiment sketch map of the application's inductance;

Fig. 7 is the application's resistance the 3rd embodiment sketch map;

Fig. 8 is a kind of 7 rank elliptic filter structural representations of the application;

Fig. 9 is that the application Fig. 2 trsanscondutance amplifier nonlinear effect is eliminated principle schematic.

Embodiment

Below, be described with reference to the accompanying drawings the realization of the application's trsanscondutance amplifier, resistance, inductance and filter.

Fig. 1 is the application's trsanscondutance amplifier structural representation, and is of Fig. 1, and this trsanscondutance amplifier comprises:

The grid of the grid of the one PMOS pipe M1 and the 2nd PMOS pipe M2 connects the positive bias voltage end VBIASP of trsanscondutance amplifier;

The grid of the 3rd PMOS pipe M3 is connected with the grid of the 4th PMOS pipe M4, and connects the common-mode feedback voltage end VCMFB of trsanscondutance amplifier;

The drain electrode of the drain electrode of the source electrode of the source electrode of the source electrode of the source electrode of the one PMOS pipe M1, the 2nd PMOS pipe M2, the 3rd PMOS pipe M3, the 4th PMOS pipe M4, the 9th NMOS pipe M9 and the tenth NMOS pipe M10 connects power voltage terminal VC;

The drain electrode of the one PMOS pipe M1 connects the drain electrode of grid and the 11 NMOS pipe M11 of the 9th NMOS pipe M9 respectively; The drain electrode of the 2nd PMOS pipe M2 connects the drain electrode of grid and the 12 NMOS pipe M12 of the tenth NMOS pipe M10 respectively; The drain electrode of the 3rd PMOS pipe M3 is connected the negative output VOUTN of trsanscondutance amplifier with the drain electrode of the 5th NMOS pipe M5; The drain electrode of the 4th PMOS pipe M4 is connected the positive output end VOUTP of trsanscondutance amplifier with the drain electrode of the 6th NMOS pipe M6;

The drain and gate of the grid of the source electrode of the source electrode of the 5th NMOS pipe M5, the tenth NMOS pipe M10, the 16 NMOS pipe M16, the 18 NMOS pipe M18 connects; The grid of the grid of the source electrode of the source electrode of the 6th NMOS pipe M6, the 9th NMOS pipe M9, the 15 NMOS pipe M15, the 17 NMOS pipe M17 is connected with drain electrode;

The source electrode of the 11 NMOS pipe M11 connects the drain electrode of the 15 NMOS pipe M15; The source electrode of the 12 NMOS pipe M12 connects the drain electrode of the 16 NMOS pipe M16;

The source electrode of the source electrode of the source electrode of the source electrode of the 15 NMOS pipe M15, the 16 NMOS pipe M16, the 17 NMOS pipe M17 and the 18 NMOS pipe M18 connects;

The grid of the grid of the 11 NMOS pipe M11 and the 5th NMOS pipe M5 all connects the normal phase input end VINP of trsanscondutance amplifier; The grid of the grid of the 6th NMOS pipe M6 and the 12 NMOS pipe M12 all connects the negative-phase input VINN of trsanscondutance amplifier.

Transconductance amplifier circuit shown in Figure 1; The 9th NMOS pipe M9, the 11 NMOS pipe M11, the 15 NMOS pipe M15, the 17 NMOS pipe M17 form a local feedback loop; Can realize the tracking of the 9th NMOS pipe M9 with less power consumption to normal phase input end VINP input voltage signal; And then, make the 5th NMOS manage the grid of M5 and the voltage V of source class through the interconnection that the 5th NMOS pipe M5 and the 6th NMOS manage M6 _GS5Keep stable, so realized constant transconductance; Same; The tenth NMOS pipe M10, the 12 NMOS pipe M12, the 16 NMOS pipe M16, the 18 NMOS pipe M18 form a local feedback loop; Can realize the tracking of the tenth NMOS pipe M10 with less power consumption to negative-phase input VINN institute input voltage signal; And then, make the 6th NMOS manage the grid of M6 and the voltage V of source class through the interconnection that the 5th NMOS pipe M5 and the 6th NMOS manage M6 _GS6Keep stable, realized constant transconductance; In addition; The source class of the source class of the 9th NMOS pipe M9 and the tenth NMOS pipe M10 is the low-resistance point; Can be so that the signal code that produces through two local feedback loops very big (being that processing signals is very capable); Source class low-resistance point through the 9th NMOS pipe M9 is transferred to the 6th NMOS pipe M6; Perhaps the source class low-resistance point through the tenth NMOS pipe M10 is transferred to the 5th NMOS pipe M5, lets local feedback loop keep constant to grid and the voltage between the source class of the 5th NMOS pipe M5 and the 6th NMOS pipe M6 like this, also can utilize limited power consumption to come the enhancing signal disposal ability to greatest extent.

In practical application; Can the size of the 5th NMOS pipe M5 and the 6th NMOS pipe M6 be provided with much larger than the size of the 9th NMOS pipe M9 and the tenth NMOS pipe M10; Thereby make that the source class resistance of the 5th NMOS pipe M5 that sees at the source class low-resistance point of the 9th NMOS pipe M9 and the source class low-resistance point of the tenth NMOS pipe M10 and the 6th NMOS pipe M6 is minimum, lead that the 5th NMOS manages M5 and the 6th NMOS manages M6 to managing thereby the signal code that local feedback loop produces is transferred to main span.

Fig. 2 is the application's trsanscondutance amplifier second embodiment, and with respect to trsanscondutance amplifier shown in Figure 1, trsanscondutance amplifier shown in Figure 2 also comprises:

The drain electrode of the drain electrode of the 7th NMOS pipe M7 and the 8th NMOS pipe M8 is connected with the source electrode of PMOS pipe M1; The grid of the 7th NMOS pipe M7 connects the normal phase input end VINP of trsanscondutance amplifier; The grid of the 8th NMOS pipe M8 connects the negative-phase input VINN of trsanscondutance amplifier; The source electrode of the 7th NMOS pipe M7 connects the drain electrode of grid and the 19 NMOS pipe M19 of the 13 NMOS pipe M13 respectively; The source electrode of the 8th NMOS pipe M8 connects the drain electrode of grid and the 20 NMOS pipe M20 of the 14 NMOS pipe M14 respectively;

The grid of the grid of the 19 NMOS pipe M19 and the 20 NMOS pipe M20 all connects the negative bias voltage end VBIASN of trsanscondutance amplifier;

The drain electrode of the 13 NMOS pipe M13 connects the drain electrode of the 5th NMOS pipe M5; The drain electrode of the 14 NMOS pipe M14 connects the drain electrode of the 6th NMOS pipe M6; The source electrode of the source electrode of the source electrode of the source electrode of the 13 NMOS pipe M13, the 14 NMOS pipe M14, the 19 NMOS pipe M19 and the 20 NMOS pipe M20 all connects the source electrode of the 15 NMOS pipe M15.

Trsanscondutance amplifier shown in Figure 2 adopts two groups of sub-trsanscondutance amplifiers to constitute; Wherein one group of sub-trsanscondutance amplifier is made up of PMOS pipe M1, the 2nd PMOS pipe, the 3rd PMOS pipe, the 4th PMOS pipe, the 5th NMOS pipe, the 6th NMOS pipe, the 9th NMOS pipe to the 12 NMOS pipe, the 15 NMOS pipe to the 18 NMOS pipe; Second group of sub-trsanscondutance amplifier by the 7th NMOS manage, the 8th NMOS pipe, the 13 NMOS pipe, the 14 NMOS pipe, the 19 NMOS pipe, the 20 NMOS pipe form; The output interconnection of two groups of amplifiers; The main span that second group of sub-trsanscondutance amplifier is first group of sub-trsanscondutance amplifier is led and is managed the three order harmonics items that an opposite in sign is provided to managing the 5th NMOS pipe with the 6th NMOS; Thereby the mode that can utilize current subtraction is eliminated the cubic term harmonic wave of the first sub-trsanscondutance amplifier, thereby realizes the low-power consumption high linearity of the said trsanscondutance amplifier of the application; And then the filter that comprises said trsanscondutance amplifier also can obtain higher linearity under situation low in energy consumption.

Fig. 1 or trsanscondutance amplifier shown in Figure 2 are in the practical application scene; When needing trsanscondutance amplifier to realize the single-ended output of both-end input; Then the negative output of trsanscondutance amplifier can be connected with the common-mode feedback voltage end VCMFB of trsanscondutance amplifier, realizes that the both-end of trsanscondutance amplifier is imported single-ended output.

Perhaps; In the practical application scene; When needing trsanscondutance amplifier to realize the output of both-end input both-end, generally need control, also promptly the voltage of the common-mode feedback voltage end VCMFB of trsanscondutance amplifier controlled the common mode electrical level of Fig. 1 or trsanscondutance amplifier shown in Figure 2; At this moment; Fig. 1 or trsanscondutance amplifier shown in Figure 2 may further include common mode feedback circuit as shown in Figure 3, combine to constitute the 3rd example structure of the application's trsanscondutance amplifier with the common mode feedback circuit of Fig. 3 by Fig. 1, are made up of the 4th example structure of the application's trsanscondutance amplifier the common mode feedback circuit structure of Fig. 2 and Fig. 3.As shown in Figure 3, said common mode feedback circuit comprises:

The source electrode of the source electrode of the 21 PMOS pipe M21 and the 22 PMOS pipe M22 connects the supply voltage input VC of trsanscondutance amplifier; The grid of the 21 PMOS pipe M21 is connected with the grid of the 22 PMOS pipe M22;

The drain electrode of the 21 PMOS pipe M21 connects the common-mode feedback voltage end VCMFB of trsanscondutance amplifier; And; The grid that connects the 21 PMOS pipe M21 through first resistance R 1 and first capacitor C 1; And, connect the drain electrode of the 23 NMOS pipe M23 and the drain electrode of the 24 NMOS pipe M24 respectively;

The drain electrode of the grid of the drain electrode of the 22 PMOS pipe M22, the 22 PMOS pipe M22, the 25 NMOS pipe M25 and the drain electrode of the 26 NMOS pipe connect;

The grid of the 23 NMOS pipe M23 connects the positive output end VOUTP of trsanscondutance amplifier, and the grid of the 24 NMOS pipe M24 is connected reference voltage end VREF with the grid of the 25 NMOS pipe M25; The grid of the 26 NMOS pipe M26 connects the negative output VOUTN of trsanscondutance amplifier;

The drain electrode of the source electrode of the source electrode of the 23 NMOS pipe M23, the 24 NMOS pipe M24, the 27 NMOS pipe M27 connects; The drain electrode of the source electrode of the source electrode of the 25 NMOS pipe M25, the 26 NMOS pipe M26, the 28 NMOS pipe M28 connects;

The grid of the 27 NMOS pipe M27 is connected negative bias voltage end VBIASN with the grid of the 28 NMOS pipe M28; The source ground of the source electrode of the 27 NMOS pipe M27 and the 28 NMOS pipe M28.

Said first resistance R 1 can realize through passive resistance, can realize that through said first resistance R 1 and first capacitor C 1 zero limit separates, thus the common-mode stability of lifting common mode feedback circuit and transconductance amplifier circuit.

Trsanscondutance amplifier for above-mentioned the application embodiment:

General; The bias current of positive bias voltage end VBIASP and the input of negative bias voltage end VBIASN two ends or the value and the needed bias voltage of its place branch road or current related of bias voltage; Concrete voltage or current values can be confirmed according to applied environment in practical application, not limit here.

General, can import the voltage of a certain fixed value for reference voltage end VREF, concrete voltage value can be confirmed according to applied environment in practical application, not limit here.

Supply voltage input VC generally connects the power supply of trsanscondutance amplifier, is used to each device power supply in the trsanscondutance amplifier.

Wherein, in practical application, when need using resistance or inductance in the filter, can use the trsanscondutance amplifier of above-mentioned the application embodiment to carry out the simulation of resistance or inductance.

Concrete, use both-end to import in the application scenarios of trsanscondutance amplifier of single-ended output at needs, can pass through Fig. 1 or trsanscondutance amplifier artifical resistance or inductance shown in Figure 2, make that resistance and the inductance in the circuit becomes active device from passive device; Trsanscondutance amplifier like Fig. 4 and the Fig. 1 of being shown in Figure 5 or Fig. 2 is simulated the electric resistance structure sketch map that obtains, and the trsanscondutance amplifier that is illustrated in figure 6 as Fig. 1 or Fig. 2 is simulated the induction structure sketch map that obtains;

In the application scenarios of the trsanscondutance amplifier that needs use both-end input both-end is exported, can be through trsanscondutance amplifier artifical resistance or the inductance of aforementioned the 3rd embodiment or the 4th embodiment; The trsanscondutance amplifier that is illustrated in figure 7 as aforementioned the 3rd embodiment or the 4th embodiment is simulated the electric resistance structure sketch map that obtains.

As shown in Figure 4, the electric resistance structure that the trsanscondutance amplifier simulation obtains comprises:

Trsanscondutance amplifier gm, said trsanscondutance amplifier gm can use Fig. 1 or trsanscondutance amplifier structure shown in Figure 2 to realize;

In addition, this resistance also comprises:

The negative output of trsanscondutance amplifier gm is connected (not shown) with the common-mode feedback voltage end of trsanscondutance amplifier gm;

The positive output end of trsanscondutance amplifier gm is connected with the negative-phase input of trsanscondutance amplifier gm, and the tie point of this connection is as first end of resistance;

The negative-phase input of trsanscondutance amplifier gm is as second end of resistance.

Wherein, this resistance can be used as earth resistance or floating earth resistance, and an end ground connection is arranged in first end of resistance described in Fig. 4 and second end, and when the other end connected other devices, this resistance was earth resistance; When first end of resistance all was connected other devices with second end, this resistance was floating earth resistance.

In the resistance shown in Figure 4; Only carry out the simulation of resistance through the trsanscondutance amplifier of the application embodiment; In order to make trsanscondutance amplifier simulate the more approaching actual resistance of performance of the resistance that obtains; In practical application, can also realize the simulation of resistance through two Fig. 1 or trsanscondutance amplifier shown in Figure 2, as shown in Figure 5, this electric resistance structure comprises:

Two Fig. 1 or trsanscondutance amplifier shown in Figure 2 are set two trsanscondutance amplifiers and are respectively the first trsanscondutance amplifier gm11 and the second trsanscondutance amplifier gm12, wherein,

The negative output of the first trsanscondutance amplifier gm11 is connected with the common-mode feedback voltage end of the first trsanscondutance amplifier gm11; The negative output of the second trsanscondutance amplifier gm12 is connected with the common-mode feedback voltage end of the second trsanscondutance amplifier gm12;

The positive output end of the first trsanscondutance amplifier gm11 is as first end of resistance, and the normal phase input end of the first trsanscondutance amplifier gm11 is as second end of resistance;

The positive output end of the normal phase input end of the positive output end of the first trsanscondutance amplifier gm11, the second trsanscondutance amplifier gm12 and the second trsanscondutance amplifier gm12 interconnects; The negative-phase input of the normal phase input end of the positive output end of the negative-phase input of the second trsanscondutance amplifier gm12, the second trsanscondutance amplifier gm12, the first trsanscondutance amplifier gm11, the first trsanscondutance amplifier gm11 interconnects.

Fig. 6 is the inductance that Fig. 1 or trsanscondutance amplifier simulation shown in Figure 2 obtain, and as shown in Figure 6, this inductance comprises:

Trsanscondutance amplifier shown in two Fig. 1 or Fig. 2 is respectively the first trsanscondutance amplifier gm11 and the second trsanscondutance amplifier gm12, wherein,

The negative output of the first trsanscondutance amplifier gm11 is connected with the common-mode feedback voltage end of the first trsanscondutance amplifier gm11; The negative output of the second trsanscondutance amplifier gm12 is connected with the common-mode feedback voltage end of the second trsanscondutance amplifier gm12;

First end of said inductance passes through second capacitor C, 2 ground connection, and is connected with the positive output end of the first trsanscondutance amplifier gm11, the normal phase input end of the second trsanscondutance amplifier gm12 respectively; Second end of inductance is connected with the normal phase input end of the first trsanscondutance amplifier gm11, the positive output end of the second trsanscondutance amplifier gm12 respectively;

The negative-phase input ground connection of the first trsanscondutance amplifier gm11, the negative-phase input ground connection of the second trsanscondutance amplifier gm12.

Fig. 7 is the resistance sketch map that the trsanscondutance amplifier simulation obtains, and comprising:

Trsanscondutance amplifier gm, this trsanscondutance amplifier can be realized through the trsanscondutance amplifier of the application the 3rd embodiment or the 4th embodiment;

This resistance also comprises:

The normal phase input end of trsanscondutance amplifier gm is connected with the negative output of trsanscondutance amplifier gm, and the tie point of this connection is as first end of said resistance;

The negative-phase input of trsanscondutance amplifier gm is connected with the positive output end of trsanscondutance amplifier gm, and the tie point of this connection is as second end of said resistance.

Above Fig. 4 ~ resistance and inductance shown in Figure 7 is active device; In practical application, can correspondingly replace passive resistance and inductance; For example in 7 rank elliptic filter structures shown in Figure 8, promptly can use Fig. 4 or Fig. 5 or resistance shown in Figure 7 to realize resistance R 1 and R2 among Fig. 8, and not use passive resistance; Use the inductance among Fig. 6 to realize inductance L 2, L3, L4 among Fig. 8, and do not use passive inductance.Because the low-power consumption high linearity of trsanscondutance amplifier wherein; Therefore; Guaranteed by the said resistance of said trsanscondutance amplifier realization and the low-power consumption and the high linearity of inductance; And then with respect to the filter that uses passive resistance and/or inductance, the characteristics such as cut-off frequency, the linearity that comprise the filter of said resistance and/inductance make that not with the influence of factors such as temperature, process corner filter power consumption is low and the linearity is high.

Certainly, filter shown in Figure 8 is merely for example, and the application's resistance and inductance can also be applied to other filters, even in other the circuit structure that comprises resistance and/or inductance, can reduce the power consumption of these circuit equally, improves the linearity.

At last, the operation principle for the trsanscondutance amplifier shown in Fig. 1 and Fig. 2 describes:

The trsanscondutance amplifier that Fig. 1 is made up of to the 18 NMOS pipe PMOS pipe M1, the 2nd PMOS pipe, the 3rd PMOS pipe, the 4th PMOS pipe, the 5th NMOS pipe, the 6th NMOS pipe, the 9th NMOS pipe to the 12 NMOS pipe, the 15 NMOS pipe; Fig. 2 has increased the subthreshold value pipe transconductance amplifier circuit of being made up of the 7th NMOS pipe, the 8th NMOS pipe, the 13 NMOS pipe, the 14 NMOS pipe, the 19 NMOS pipe, the 20 NMOS pipe that is particularly suitable for low pressure applications on the basis of Fig. 1; Thereby make Fig. 2 form by two groups of sub-trsanscondutance amplifiers; One group of sub-trsanscondutance amplifier is made up of PMOS pipe M1, the 2nd PMOS pipe, the 3rd PMOS pipe, the 4th PMOS pipe, the 5th NMOS pipe, the 6th NMOS pipe, the 9th NMOS pipe to the 12 NMOS pipe, the 15 NMOS pipe to the 18 NMOS pipe, second group of sub-trsanscondutance amplifier by the 7th NMOS manage, the 8th NMOS pipe, the 13 NMOS pipe, the 14 NMOS pipe, the 19 NMOS are managed, the 20 NMOS manages and forms.The main span that second group of sub-trsanscondutance amplifier is first group of sub-trsanscondutance amplifier is led and is managed the three order harmonics items that an opposite in sign is provided to managing the 5th NMOS pipe with the 6th NMOS; Thereby the mode that can utilize current subtraction is eliminated the cubic term harmonic wave of the first sub-trsanscondutance amplifier, thereby realizes the low-power consumption high linearity of the said trsanscondutance amplifier of the application

Wherein, the 9th NMOS pipe, the 11 NMOS pipe, the 15 NMOS pipe, the 17 NMOS manage as the input signal detection circuit, give the 5th NMOS the source class voltage that pipe changes with input voltage; The tenth NMOS pipe, the 12 NMOS pipe, the 16 NMOS pipe, the 18 NMOS manage as the input signal detection circuit, give the 6th NMOS the source class voltage that pipe changes with input voltage.And the 7th NMOS pipe and the 19 NMOS pipe, the 8th NMOS pipe and the 20 NMOS pipe are regulated the common mode electrical level of the common-mode feedback voltage end input of trsanscondutance amplifier respectively as a simple source follower, make the 13 NMOS pipe and the 14 NMOS pipe be operated in sub-threshold region respectively.

In addition; The 5th NMOS pipe M5, the 6th NMOS pipe M6 lead amplifier tube as main span; The 9th NMOS pipe M9, the tenth NMOS pipe M10, the 11 NMOS pipe M11, the 12 NMOS pipe M12, the 15 NMOS pipe M15, the 16 NMOS pipe M16, the 17 NMOS pipe M17, the 18 NMOS pipe M18 be as surveying the feedback circuit that input signal changes, and makes the grid of the 11 NMOS pipe M11 and the voltage difference V between the source electrode _GS11And the grid of the 12 NMOS pipe M12 and the voltage difference V between the source electrode _GS12Keep constant; Thereby the source class that lets the 11 NMOS pipe M11 and the 12 NMOS manage M12 is followed the variation of input signal and is changed; So cross-coupled the 5th NMOS pipe M5, the 6th NMOS pipe M6 carry out the electric current and voltage conversion according to the variation of input signal fully; And the electric current that flows through the 5th NMOS pipe M5, the 6th NMOS pipe M6 changes along with the variation of input signal, is similar to the amplifier tube of AB class work.And the 7th NMOS pipe M7 and the 8th NMOS pipe M8 are as source follower; The 19 NMOS pipe M19 is that the 7th NMOS pipe M7 provides current offset;, the 19 NMOS pipe M19 is that the 7th NMOS pipe M7 provides current offset; The 20 NMOS pipe M20 is that the 8th NMOS pipe M8 provides current offset, and the 13 NMOS pipe M13 and the 14 NMOS pipe M14 are operated in sub-threshold region.

For the metal-oxide-semiconductor that is operated in the saturation region, leakage current can be expressed as

$I_{D,\mathrm{sat}}=\frac{u_n{C}_{\mathrm{ox}}\frac{W}{L}{(V_{\mathrm{GS}}-V_{\mathrm{thn}})}^2}{2[1+\mathrm{\θ}(V_{\mathrm{GS}}-V_{\mathrm{thn}})]}(1+\mathrm{\λ}{V}_{\mathrm{DS}})---\left(1\right)$

Wherein, W/L is the breadth length ratio of metal-oxide-semiconductor, C _OxBe the oxide layer electric capacity of unit channel area, u _nBe the field mobility, θ is the mobility decay factor, V _ThnBe the threshold voltage of NMOS pipe, λ is the metal-oxide-semiconductor output impedance factor; V _DSThe drain electrode of expression metal-oxide-semiconductor and the voltage difference between the source electrode; V _GSThe grid of expression metal-oxide-semiconductor and the voltage difference between the source electrode.

Consider the nonlinear effect of saturation region metal-oxide-semiconductor, the output current of trsanscondutance amplifier can use the Taylor series expansion to do

I _o=I _outp-I _outn=a ₁V _in+a ₃V _in ³+a ₅V _in ⁵+a ₇V _in ⁷+… (2)

Wherein, I _OutpThe output current of the positive output end of expression trsanscondutance amplifier; I _OutnThe output current of the negative output of expression trsanscondutance amplifier.V _InThe voltage signal of the input input of expression trsanscondutance amplifier.

Can derive the triple-frequency harmonics item thus is:

$a_{3,\mathrm{sat}}=-\frac{u_n{C}_{\mathrm{ox}}\left(\frac{W}{L}\right)\mathrm{\θ}}{32{[1+\mathrm{\θ}(V_{\mathrm{cm}}-V_{\mathrm{thn}})]}^4}---\left(3\right)$

In like manner for the metal-oxide-semiconductor of sub-threshold region work, its leakage current is expressed as:

$I_{D,\mathrm{subthershold}}=I_o\frac{W}{L}{e}^{(V_{\mathrm{GS}}/\mathrm{\ξ}{V}_T)}(1-e^{(-V_{\mathrm{DS}}/V_T)})---\left(4\right)$

V _TThe thermal voltage of expression metal-oxide-semiconductor, its concrete numerical value is relevant with the technology of metal-oxide-semiconductor; ξ representes the sub-threshold slope factor (Subthreshold Slope factor), and it is sub-threshold region thermal voltage V _TFitting coefficient, its concrete numerical value is also relevant with the technology of metal-oxide-semiconductor.

Leakage current in the formula (4) can be got according to the Taylor series expansion equally:

$a_{3,\mathrm{sub}}=\frac{I_0}{24{\left(\mathrm{\ξ}{V}_T\right)}^3}\left(\frac{W}{L}\right)e^{(V_{\mathrm{cm}}/\mathrm{\ξ}{V}_T)}---\left(5\right)$

Can know according to formula (4), for same input term signal, three rank item opposite in signs of three rank items of saturation region metal-oxide-semiconductor and subthreshold value metal-oxide-semiconductor, the dimension scale that therefore can regulate saturation region metal-oxide-semiconductor and subthreshold value pipe realizes:

a _3,sat+βa _{3,subthreshold}=0 (6)

Wherein β is the gain of source follower.

In general the input-output characteristic of trsanscondutance amplifier can be approximated to be:

I _out=g _m1V _inp+g _m2V _inp ²+g _m3V _inp ³+g _m4V _inp ⁴+… (7)

g _MiThe i rank high order mutual conductance item coefficient of expression trsanscondutance amplifier, i is a natural number.In practical application, need elimination or reduce all the high-order nonlinear components outside the single order fundamental component as far as possible.

Therefore, the electric current of the positive output end of first sub-trsanscondutance amplifier Gm1 output is among Fig. 2:

I _outp,1=g _m1,1V _inp+g _m2,1V _inp ²+g _m3,1V _inp ³+g _m4,1V _inp ⁴+…；

The electric current of the negative output output of the first sub-trsanscondutance amplifier Gm1 is:

I _outn,1=g _m1，1V _inn+g _m2,1V _inn ²+g _m3,1V _inn ³+g _m4,1V _inn ⁴+…；

The electric current of the positive output end output of the second sub-trsanscondutance amplifier Gm2 is:

I _outp,2=g _m1,2V _inp+g _m2,2V _inp ²+g _m3,2V _inp ³+g _m4,2V _inp ⁴+…；

The electric current of the negative output output of the second sub-trsanscondutance amplifier Gm2 is:

I _outn,2=g _m1,2V _inn+g _m2,2V _inn ²+g _m3,2V _inn ³+g _m4,2V _inn ⁴+…；

Wherein, g _{Mi, j}Represent j sub-trsanscondutance amplifier Gm _jOutput current in i rank high order mutual conductance item coefficient.G for example _M4,2Represent the 4th rank high order mutual conductance item coefficient in the output current of the second sub-trsanscondutance amplifier Gm2.In addition, V _InpThe forward input voltage of representing sub-trsanscondutance amplifier; V _InnThe negative sense input voltage of representing sub-trsanscondutance amplifier.

Therefore; As shown in Figure 9; When circuit shown in Figure 2 adopted the cross-coupled structure of two sub-trsanscondutance amplifier gm1 and gm2 output, the output item of two sub-trsanscondutance amplifiers was intersected and is sued for peace, and the odd item that two sub-trsanscondutance amplifiers have distinct symbols just is cancelled a part; Therefore the non-linear of trsanscondutance amplifier shown in Figure 2 can be reduced, thereby makes trsanscondutance amplifier shown in Figure 2 obtain higher linearity.Under the ideal situation, the output current I of trsanscondutance amplifier shown in Figure 2 _Out=(g _M1,1-g _M1,2) (V _Inp-V _Inn).

The trsanscondutance amplifier of the application embodiment; Transconductance amplifier circuit and asymmetric subthreshold value pipe trsanscondutance amplifier cross-couplings by negative feedback structure form; Can be under sub-micron and deep-submicron CMOS process condition; Realize the very high linearity and constant transconductance scope with lower power consumption condition, its linearity and constant transconductance scope are very little with changes in environmental conditions such as supply voltage, temperature, process corner.

The trsanscondutance amplifier of the application embodiment and/or resistance and/or inductance can be applicable in the various existing circuit, and filter especially is for example in the Gm-C filter, to satisfy the high requirement of the receiver system linearity; In addition, said trsanscondutance amplifier can also be applied to satisfy both requirements to high linearity in transmission of mobile video signal and the switched-capacitor circuit.

By the trsanscondutance amplifier that common mode feedback circuit shown in Figure 3 combines Fig. 1 or Fig. 2 to form, its stability is higher, and is very suitable for frequency applications;

In addition, the trsanscondutance amplifier of the application embodiment can adapt to lower supply voltage under deep sub-micron CMOS standard process, meet current low voltage CMOS trend.

The above only is the application's a preferred implementation; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the application's principle; Can also make some improvement and retouching, these improvement and retouching also should be regarded as the application's protection range.

Claims (8)

1. a trsanscondutance amplifier is characterized in that, comprising:

The grid of the grid of the one PMOS pipe and the 2nd PMOS pipe connects the positive bias voltage end of trsanscondutance amplifier;

The grid of the 3rd PMOS pipe is connected with the grid of the 4th PMOS pipe, and connects the common-mode feedback voltage end of trsanscondutance amplifier;

The drain electrode of the drain electrode of the source electrode of the source electrode of the source electrode of the source electrode of the one PMOS pipe, the 2nd PMOS pipe, the 3rd PMOS pipe, the 4th PMOS pipe, the 9th NMOS pipe and the tenth NMOS pipe connects the power voltage terminal of trsanscondutance amplifier;

The drain electrode of the one PMOS pipe connects the drain electrode of the grid and the 11 NMOS pipe of the 9th NMOS pipe respectively; The drain electrode of the 3rd PMOS pipe is connected the negative output of trsanscondutance amplifier with the drain electrode of the 5th NMOS pipe; The drain electrode of the 4th PMOS pipe is connected the positive output end of trsanscondutance amplifier with the drain electrode of the 6th NMOS pipe;

The drain electrode of the 2nd PMOS pipe connects the drain electrode of the grid and the 12 NMOS pipe of the tenth NMOS pipe respectively; The drain and gate of the grid of the source electrode of the source electrode of the 5th NMOS pipe, the tenth NMOS pipe, the 16 NMOS pipe, the 18 NMOS pipe connects; The grid of the grid of the source electrode of the source electrode of the 6th NMOS pipe, the 9th NMOS pipe, the 15 NMOS pipe, the 17 NMOS pipe is connected with drain electrode;

The source electrode of the 11 NMOS pipe connects the drain electrode of the 15 NMOS pipe; The source electrode of the 12 NMOS pipe connects the drain electrode of the 16 NMOS pipe;

The source electrode of the source electrode of the source electrode of the source electrode of the 15 NMOS pipe, the 16 NMOS pipe, the 17 NMOS pipe and the 18 NMOS pipe connects;

The grid of the grid of the 11 NMOS pipe and the 5th NMOS pipe all connects the normal phase input end of trsanscondutance amplifier; The grid of the grid of the 6th NMOS pipe and the 12 NMOS pipe all connects the negative-phase input of trsanscondutance amplifier.

2. trsanscondutance amplifier according to claim 1 is characterized in that, also comprises:

The drain electrode of the drain electrode of the 7th NMOS pipe and the 8th NMOS pipe is connected with the source electrode of PMOS pipe; The grid of the 7th NMOS pipe connects the normal phase input end of trsanscondutance amplifier; The grid of the 8th NMOS pipe connects the negative-phase input of trsanscondutance amplifier; The source electrode of the 7th NMOS pipe connects the drain electrode of the grid and the 19 NMOS pipe of the 13 NMOS pipe respectively; The source electrode of the 8th NMOS pipe connects the drain electrode of the grid and the 20 NMOS pipe of the 14 NMOS pipe respectively;

The grid of the grid of the 19 NMOS pipe and the 20 NMOS pipe all connects the negative bias voltage end of trsanscondutance amplifier;

The drain electrode of the 13 NMOS pipe connects the drain electrode of the 5th NMOS pipe; The drain electrode of the 14 NMOS pipe connects the drain electrode of the 6th NMOS pipe; The source electrode of the source electrode of the source electrode of the source electrode of the 13 NMOS pipe, the 14 NMOS pipe, the 19 NMOS pipe and the 20 NMOS pipe all connects the source electrode of the 15 NMOS pipe.

3. trsanscondutance amplifier according to claim 1 and 2 is characterized in that, also comprises:

The source electrode of the source electrode of the 21 PMOS pipe and the 22 PMOS pipe connects the supply voltage input of trsanscondutance amplifier; The grid of the 21 PMOS pipe is connected with the grid of the 22 PMOS pipe;

The drain electrode of the 21 PMOS pipe connects the common-mode feedback voltage end of trsanscondutance amplifier; And; Connect the grid that the 21 PMOS manages through first resistance and first electric capacity, and, the drain electrode of the 23 NMOS pipe and the drain electrode of the 24 NMOS pipe connected respectively;

The drain electrode of the 22 PMOS pipe connects the grid of the 22 PMOS pipe, the drain electrode of the 25 NMOS pipe and the drain electrode of the 26 NMOS pipe;

The grid of the 23 NMOS pipe connects the positive output end of trsanscondutance amplifier, and the grid of the 24 NMOS pipe is connected reference voltage end with the grid of the 25 NMOS pipe; The grid of the 26 NMOS pipe connects the negative output of trsanscondutance amplifier;

The drain electrode of the source electrode of the source electrode of the 23 NMOS pipe, the 24 NMOS pipe, the 27 NMOS pipe connects; The drain electrode of the source electrode of the source electrode of the 25 NMOS pipe, the 26 NMOS pipe, the 28 NMOS pipe connects;

The grid of the 27 NMOS pipe is connected negative bias voltage end with the grid of the 28 NMOS pipe; The source ground of the source electrode of the 27 NMOS pipe and the 28 NMOS pipe.

4. a resistance is characterized in that, comprises claim 1 or 2 described trsanscondutance amplifiers, wherein,

The negative output of trsanscondutance amplifier is connected with the common-mode feedback voltage end of trsanscondutance amplifier;

The positive output end of trsanscondutance amplifier is connected with the negative-phase input of trsanscondutance amplifier, and the tie point of this connection is as first end of resistance;

The negative-phase input of trsanscondutance amplifier is as second end of resistance.

5. a resistance is characterized in that, comprises the described trsanscondutance amplifier of claim 3, wherein,

The normal phase input end of trsanscondutance amplifier is connected with the negative output of trsanscondutance amplifier, and the tie point of this connection is as first end of said resistance;

The negative-phase input of trsanscondutance amplifier is connected with the positive output end of trsanscondutance amplifier, and the tie point of this connection is as second end of said resistance.

6. a resistance is characterized in that, comprises two claims 1 or 2 described trsanscondutance amplifiers, is respectively first trsanscondutance amplifier and second trsanscondutance amplifier, wherein,

The negative output of first trsanscondutance amplifier is connected with the common-mode feedback voltage end of first trsanscondutance amplifier; The negative output of second trsanscondutance amplifier is connected with the common-mode feedback voltage end of second trsanscondutance amplifier;

The positive output end of first trsanscondutance amplifier is as first end of resistance, and the normal phase input end of first trsanscondutance amplifier is as second end of resistance;

The positive output end of the normal phase input end of the positive output end of first trsanscondutance amplifier, second trsanscondutance amplifier and second trsanscondutance amplifier interconnects; The negative-phase input of the normal phase input end of the positive output end of the negative-phase input of second trsanscondutance amplifier, second trsanscondutance amplifier, first trsanscondutance amplifier, first trsanscondutance amplifier interconnects.

7. an inductance is characterized in that, comprises two claims 1 or 2 described trsanscondutance amplifiers, is respectively first trsanscondutance amplifier and second trsanscondutance amplifier, wherein,

The negative output of first trsanscondutance amplifier is connected with the common-mode feedback voltage end of first trsanscondutance amplifier; The negative output of second trsanscondutance amplifier is connected with the common-mode feedback voltage end of second trsanscondutance amplifier;

First end of inductance passes through second capacity earth, and is connected with the positive output end of first trsanscondutance amplifier, the normal phase input end of second trsanscondutance amplifier respectively; Second end of inductance is connected with the normal phase input end of first trsanscondutance amplifier, the positive output end of second trsanscondutance amplifier respectively;

The negative-phase input ground connection of first trsanscondutance amplifier, the negative-phase input ground connection of second trsanscondutance amplifier.

8. a filter is characterized in that, comprises each described trsanscondutance amplifier of claim 1 to 3, and/or, each described resistance of claim 4 to 6, and/or, the described inductance of claim 7.

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