CN109536965A - Stripping tin agent and preparation method thereof for removing the bad tin coating of semiconductor package part - Google Patents
Stripping tin agent and preparation method thereof for removing the bad tin coating of semiconductor package part Download PDFInfo
- Publication number
- CN109536965A CN109536965A CN201811489161.6A CN201811489161A CN109536965A CN 109536965 A CN109536965 A CN 109536965A CN 201811489161 A CN201811489161 A CN 201811489161A CN 109536965 A CN109536965 A CN 109536965A
- Authority
- CN
- China
- Prior art keywords
- agent
- tin
- sodium
- parts
- semiconductor package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/40—Alkaline compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08H—DERIVATIVES OF NATURAL MACROMOLECULAR COMPOUNDS
- C08H6/00—Macromolecular compounds derived from lignin, e.g. tannins, humic acids
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Separation, Recovery Or Treatment Of Waste Materials Containing Plastics (AREA)
- Chemical And Physical Treatments For Wood And The Like (AREA)
Abstract
The present invention relates to a kind of stripping tin agent and preparation method thereof for removing the bad tin coating of semiconductor package part, and shell tin agent by including that the component of following weight percent is prepared: highly basic 20-45%, compound complex agent 3-8%, oxidant 0.1-0.4%, the organic inhibitor 0.2-0.6% of copper, surfactant 0.2-0.8%, stabilizer 0.1-0.5%, surplus are water；The compound complex agent includes following components and parts by weight content: 20-35 parts of modified sodium lignosulfonate, 10-15 parts of sodium gluconate, 6-12 parts of sodium potassium tartrate tetrahydrate, 5-8 parts of ethylenediamine tetraacetic methene sodium phosphate and 8-15 parts of coconut oil diethanol amide.Compared with prior art, the present invention shells tin agent without containing volatile materials such as fluoride, nitric acid, toxic gas containing nitrogen oxide will not be generated during strip, service life is long, can be completely stripped the bad tin coating of print circuit board surface, does not generate mud or amount of sludge very little substantially, and bottom is completely bright after strip, it is not easy to tarnish, quantity of wastewater effluent is seldom, and environmental pollution is small.
Description
Technical field
The invention belongs to the coats of metal to strip technical field, be related to a kind of stripping tin agent and preparation method thereof, more particularly, to
A kind of stripping tin agent and preparation method thereof for removing the bad tin coating of semiconductor package part.
Background technique
Currently, the update speed of electronic product is gradually accelerated, and conduct with the fast development of electronics and information industry
Important electronic component, (abbreviation of Printed Circuit Board, Chinese are printed circuit board to PCB, are also known as printed
Wiring board) be electronic component supporter, be electronic component electrical connection carrier.And in the actual production process of PCB
In, it is needed to adapt to weld attachment, capacitor, resistance and inductance thereon is all made of three layers of end electrode technology.Three layers of end electricity
Pole is made of three layers of electrode, be basal electrode layer (silver layer or layers of copper), intermediate electrode layer (nickel layer) and external electrode layer (tin layers or
Leypewter layer).Outermost layer electrotinning has a major impact Product jointing performance, electrical property and appearance.During tin plating not
It can avoid that some rejected products can be generated, climbed such as end tin layers weld failure, tin layers nigrescence, spot, product appearance and plate bad, tin
Product size tolerance caused by coating is partially thick is unqualified etc..If these rejected products directly scrapped, a kind of not still waste,
And production cost can be greatly increased.To reduce cost, it is necessary to rationally strip the tin layers on substandard product surface, then weigh
New plating is reprocessed as certified products use.
The method of conventional tin layers stripping mainly has chemical method and electrolysis method.Existing chemistry etching agent is mainly hydrogen peroxide
With the acidic aqueous solution of fluoride, domestic PC B corporate boss will use nitric acid-ferric nitrate system and nitric acid-alkyl sulfonic acid at present.
Since fluoride has the factors such as difficult very strong toxicity, waste water, etching insulating layer and dioxygen water unstable seldom at present
There is enterprise using the system etching agent.Nitric acid-nitric acid swage tin stripping liquid agent, concentration of nitric acid are generally 20~25%, have high speed
The features such as stripping tin, high-efficient and lasting, bright-copper-face, but due to the strong oxidizing property of nitric acid, the system is more serious to the corrosion of copper, is moving back
A large amount of oxides of nitrogen gas is generated during tin, and very big harm is brought to environment and site operation personnel.Nitric acid-alkane
The composition of base sulfonic acid type, the dosage form is similar with nitric acid type stripping tin liquor, the difference is that concentration of nitric acid is lower, is generally less than equal to
15%, reduce the harm to equipment and environment, but the addition of organic sulfonic acid improves its cost.Although and electrolysis method strip speed
Degree is very fast, but needs power source special, and disposable investment is big, and since workpiece shapes are different, electric force lines distribution is uneven, makes work
Each position coating strip speed difference of part is larger, is easy to cause local matrix corrosion, while the not applicable such as slice component of this method,
As the use of pcb board, therefore this method has greater limitations.It therefore is always tired for the stripping of slice component end tin layers
Disturb a problem of Surface Processing Industry.
Summary of the invention
It is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide a kind of stripping tin speed is fast, surely
It is qualitative good, only corrode tin layers, and shell tin completely and bottom is bright after shell, be not easy to tarnish, the feature of environmental protection it is good be used to remove
The stripping tin agent of the bad tin coating of semiconductor package part.
Another object of the present invention is just to provide above-mentioned for removing the stripping tin agent of the bad tin coating of semiconductor package part
Preparation method.
The purpose of the present invention can be achieved through the following technical solutions:
It is a kind of for removing the stripping tin agent of the bad tin coating of semiconductor package part, the stripping tin agent is by including following weight percent
Several components are prepared: highly basic 20-45%, compound complex agent 3-8%, oxidant 0.1-0.4%, copper organic inhibitor
0.2-0.6%, surfactant 0.2-0.8%, stabilizer 0.1-0.5%, surplus are water.
It with inorganic strong alkali is that 1:2-6 is mixed that the highly basic is organic alkali in mass ratio.
The organic alkali includes one of sodium methoxide, sodium ethoxide, potassium ethoxide, sodium tert-butoxide or quaternary ammonium base or several
Kind, the inorganic strong alkali includes one or more of sodium hydroxide, potassium hydroxide, potassamide or Sodamide.
The compound complex agent includes following components and parts by weight content: 20-35 parts of modified sodium lignosulfonate, grape
10-15 parts of sodium saccharate, 6-12 parts of sodium potassium tartrate tetrahydrate, 5-8 parts of ethylenediamine tetraacetic methene sodium phosphate and coconut oil diethanol amide 8-15
Part.
The preparation method of the modified sodium lignosulfonate the following steps are included:
Step (A): sodium lignin sulfonate powder is added to the water, and the water that mass concentration is 30-40% is made in stirring and dissolving
Hydroquinone is added in solution, and regulation system pH value is 8-10, is placed in variable frequency microwave reactor, regulation power 300-
1200W is warming up to 90-100 DEG C, reacts 0.5-1h；
Step (B): above-mentioned reaction solution is taken out from microwave reactor, epoxychloropropane and ethylenediamine is added, using normal pressure
Heating water bath adjusts temperature to 70-80 DEG C, is stirred to react 1-2h；
Step (C): it is cooled to 30-40 DEG C of addition phosphorous acid crystal, is uniformly mixed；
Step (D): after being cooled to 30-40 DEG C, being added dropwise formalin, react 2-4h after being then warming up to 80-100 DEG C, to
Modified sodium lignosulfonate is obtained after reaction.
The mass ratio of the sodium lignin sulfonate and hydroquinone, epoxychloropropane and ethylenediamine is 10:2-4:1-2:
1-1.5；
The mass ratio of the sodium lignin sulfonate and phosphorous acid crystal, formalin is 10:1.5-3:3-4；
The mass concentration of the formalin is 32-37%, and the formalin drips in 0.5h.
The oxidant includes one or both of tert-butyl hydroperoxide or hydrogen peroxide.
The organic inhibitor of the copper includes sulfamic acid, benzotriazole, carboxy benzotriazole, methyl benzo three
One or more of nitrogen azoles, hydroxy benzo triazole or pyrrolidones.
The surfactant includes one in polyethylene glycol, alkyl phenol polyoxyethylene ether or alkyl alcohol ethoxylates
Kind is several, and the stabilizer includes one or both of thiocarbamide or urea.
It is a kind of for remove the bad tin coating of semiconductor package part stripping tin agent preparation method, this method includes following step
It is rapid:
Step (1): it stocks up by the component of following weight percent:
Highly basic 20-45%, compound complex agent 3-8%, oxidant 0.1-0.4%, copper organic inhibitor 0.2-0.6%,
Surfactant 0.2-0.8%, stabilizer 0.1-0.5%, surplus are water；
Step (2): taking the water of 1/2-2/3 amount, sequentially adds highly basic, compound complex agent according to the ratio under agitation, fills
Divide and stir evenly, premixed liquid I is made；
Step (3): taking remaining water, sequentially add according to the ratio under agitation oxidant, copper organic inhibitor and
Stabilizer stirs, and premixed liquid II is made；
Step (4): premixed liquid II being added into premixed liquid I under agitation, is stirred well to uniformly, then according to the ratio
Surfactant is added, continues to be stirred until homogeneous.
The present invention shells tin agent in actual use, is first heated to 75-85 DEG C and maintains 75-85 DEG C stripping tin agent, will be to
The substrate of processing, which is placed in stripping tin agent, impregnates 20-30min, after the tin layers of substrate are removed, takes out, dry.
The present invention shells tin agent and uses alkaline system, with water (preferably deionized water) for solvent, without containing fluoride, nitric acid etc.
Volatile materials, compared to traditional acid system, present invention stripping tin agent corrosivity is smaller, the damage to electronic component pin
Less；There is in modified sodium lignosulfonate molecule great amount of hydroxy group and carboxyl, introduced ammonia in used compound complex agent
Also there are lone pair electrons pair on N, P atom of base and phosphonic acid base, there is stronger complexing power, with sodium gluconate, tartaric acid
Potassium sodium, ethylenediamine tetraacetic methene sodium phosphate and coconut oil diethanol amide can play mutual synergistic effect, can with shelled in treatment process
Sn (II) in tin agent forms strong complexing, and then greatly reduces free Sn (II), fundamentally inhibits the generation of mud；It adopts
Use tert-butyl hydroperoxide or hydrogen peroxide as oxidant, while guaranteeing good oxidation effect, excessive oxidant can
It is decomposed in strong basicity system and generates oxygen, be detached from stripping tin agent system in the form of bubbles；The organic inhibitor of used copper can
To play the role of bright ground layers of copper, stripping tin agent can be effectively suppressed, substrate layers of copper is corroded, and its glossy surface is kept to be not easy
It tarnishes；Used surfactant can significantly reduce surface tension, contact stripping tin agent preferably with substrate, to promote
Into the dissolution of tin layers；Used stabilizer, which is conducive to slow down Sn (II), is oxidized to Sn (IV), and then fundamentally inhibits to become silted up
The generation of mud.
Compared with prior art, the present invention shells tin agent system in alkalinity, does not contain the volatile materials such as fluoride, nitric acid,
Only there is effect to tin layers, other parent metal agent ceramic body no corrosions are acted on, will not be generated during strip toxic
Gas containing nitrogen oxide, stripping the tin agent service life it is long, the bad tin coating of print circuit board surface can be completely stripped, do not generated substantially
Mud or amount of sludge very little, and bottom is completely bright after strip, is not easy to tarnish, quantity of wastewater effluent is seldom, environmental pollution
It is small, it can effectively solve the problems, such as a large amount of ammonia nitrogen waste water processing and discharge brought by tradition stripping tin agent, there is society well
Economic benefit.
Specific embodiment
The present invention is described in detail combined with specific embodiments below.
Embodiment 1:
The present embodiment is used to remove the stripping tin agent of the bad tin coating of semiconductor package part, by including following weight percent
Component is prepared: highly basic 30%, compound complex agent 6%, oxidant 0.3%, the organic inhibitor 0.4% of copper, surface-active
Agent 0.3%, stabilizer 0.3%, surplus are water.
Wherein, it is that 1:4 is mixed, and organic alkali is the tert-butyl alcohol with inorganic strong alkali that highly basic is organic alkali in mass ratio
Sodium, inorganic strong alkali are sodium hydroxide.
Compound complex agent includes following components and parts by weight content: 28 parts of modified sodium lignosulfonate, sodium gluconate 12
Part, 8 parts of sodium potassium tartrate tetrahydrate, 6 parts of ethylenediamine tetraacetic methene sodium phosphate and 10 parts of coconut oil diethanol amide.
In the present embodiment modified sodium lignosulfonate preparation method the following steps are included:
Step (A): sodium lignin sulfonate powder is added to the water, stirring and dissolving be made mass concentration be 32% it is water-soluble
Hydroquinone is added in liquid, and regulation system pH value is 9, is placed in variable frequency microwave reactor, regulation power 800W is warming up to 95
DEG C, react 0.5h；
Step (B): above-mentioned reaction solution is taken out from microwave reactor, epoxychloropropane and ethylenediamine is added, using normal pressure
Heating water bath adjusts temperature to 72 DEG C, is stirred to react 2h；
Step (C): 35 DEG C of addition phosphorous acid crystals are cooled to, are uniformly mixed；
Step (D): after being cooled to 35 DEG C, formalin is added dropwise, 3h is reacted after being then warming up to 90 DEG C, to after reaction
Obtain modified sodium lignosulfonate.
Wherein, the mass ratio of sodium lignin sulfonate and hydroquinone, epoxychloropropane and ethylenediamine is 10:3:1:1；It is wooden
The mass ratio of plain sodium sulfonate and phosphorous acid crystal, formalin is 10:3:3；The mass concentration of formalin is 35%, and first
Aldehyde solution drips in 0.5h.
In the present embodiment, oxidant is hydrogen peroxide；The organic inhibitor of copper is pyrrolidones, and surfactant is poly- second
Glycol, stabilizer are urea.
The present embodiment is used to remove the preparation method of the stripping tin agent of the bad tin coating of semiconductor package part, including following step
It is rapid:
Step (1): it stocks up by the component of following weight percent:
Highly basic 30%, compound complex agent 6%, oxidant 0.3%, copper organic inhibitor 0.4%, surfactant
0.3%, stabilizer 0.3%, surplus are water；
Step (2): taking the water of 2/3 amount, sequentially adds highly basic, compound complex agent according to the ratio under agitation, sufficiently stirs
It mixes uniformly, premixed liquid I is made；
Step (3): taking remaining water, sequentially add according to the ratio under agitation oxidant, copper organic inhibitor and
Stabilizer stirs, and premixed liquid II is made；
Step (4): premixed liquid II being added into premixed liquid I under agitation, is stirred well to uniformly, then according to the ratio
Surfactant is added, continues to be stirred until homogeneous.
Embodiment 2:
The present embodiment is used to remove the stripping tin agent of the bad tin coating of semiconductor package part, by including following weight percent
Component is prepared: highly basic 36%, compound complex agent 5%, oxidant 0.2%, the organic inhibitor 0.5% of copper, surface-active
Agent 0.4%, stabilizer 0.4%, surplus are water.
Wherein, it is that 1:3 is mixed, and organic alkali is ethyl alcohol with inorganic strong alkali that highly basic is organic alkali in mass ratio
Potassium, inorganic strong alkali are potassium hydroxide.
Compound complex agent includes following components and parts by weight content: 32 parts of modified sodium lignosulfonate, sodium gluconate 10
Part, 7 parts of sodium potassium tartrate tetrahydrate, 5 parts of ethylenediamine tetraacetic methene sodium phosphate and 12 parts of coconut oil diethanol amide.
In the present embodiment modified sodium lignosulfonate preparation method the following steps are included:
Step (A): sodium lignin sulfonate powder is added to the water, stirring and dissolving be made mass concentration be 35% it is water-soluble
Hydroquinone is added in liquid, and regulation system pH value is 8, is placed in variable frequency microwave reactor, regulation power 1000W is warming up to
100 DEG C, react 0.5h；
Step (B): above-mentioned reaction solution is taken out from microwave reactor, epoxychloropropane and ethylenediamine is added, using normal pressure
Heating water bath adjusts temperature to 76 DEG C, is stirred to react 1.5h；
Step (C): 34 DEG C of addition phosphorous acid crystals are cooled to, are uniformly mixed；
Step (D): after being cooled to 34 DEG C, formalin is added dropwise, 2h is reacted after being then warming up to 100 DEG C, to the end of reacting
After obtain modified sodium lignosulfonate.
Wherein, the mass ratio of sodium lignin sulfonate and hydroquinone, epoxychloropropane and ethylenediamine is 10:2:1:1.2；Wood
The mass ratio of quality sodium sulfonate and phosphorous acid crystal, formalin is 10:2:3.5；The mass concentration of formalin is 32%, and
And formalin drips in 0.5h.
In the present embodiment, oxidant is hydrogen peroxide；The organic inhibitor of copper is hydroxy benzo triazole, surfactant
For alkyl phenol polyoxyethylene ether, stabilizer is thiocarbamide.
The present embodiment is used to remove the preparation method of the stripping tin agent of the bad tin coating of semiconductor package part, including following step
It is rapid:
Step (1): it stocks up by the component of following weight percent:
Highly basic 36%, compound complex agent 5%, oxidant 0.2%, copper organic inhibitor 0.5%, surfactant
0.4%, stabilizer 0.4%, surplus are water；
Step (2): taking the water of 2/3 amount, sequentially adds highly basic, compound complex agent according to the ratio under agitation, sufficiently stirs
It mixes uniformly, premixed liquid I is made；
Step (3): taking remaining water, sequentially add according to the ratio under agitation oxidant, copper organic inhibitor and
Stabilizer stirs, and premixed liquid II is made；
Step (4): premixed liquid II being added into premixed liquid I under agitation, is stirred well to uniformly, then according to the ratio
Surfactant is added, continues to be stirred until homogeneous.
Embodiment 3:
The present embodiment is used to remove the stripping tin agent of the bad tin coating of semiconductor package part, by including following weight percent
Component is prepared: highly basic 40%, compound complex agent 6%, oxidant 0.3%, the organic inhibitor 0.4% of copper, surface-active
Agent 0.7%, stabilizer 0.3%, surplus are water.
Wherein, it is that 1:5 is mixed, and organic alkali is ethyl alcohol with inorganic strong alkali that highly basic is organic alkali in mass ratio
Sodium, inorganic strong alkali are Sodamide.
Compound complex agent includes following components and parts by weight content: 34 parts of modified sodium lignosulfonate, sodium gluconate 14
Part, 6 parts of sodium potassium tartrate tetrahydrate, 7 parts of ethylenediamine tetraacetic methene sodium phosphate and 15 parts of coconut oil diethanol amide.
In the present embodiment modified sodium lignosulfonate preparation method the following steps are included:
Step (A): sodium lignin sulfonate powder is added to the water, stirring and dissolving be made mass concentration be 35% it is water-soluble
Hydroquinone is added in liquid, and regulation system pH value is 10, is placed in variable frequency microwave reactor, regulation power 600W is warming up to 90
DEG C, react 1h；
Step (B): above-mentioned reaction solution is taken out from microwave reactor, epoxychloropropane and ethylenediamine is added, using normal pressure
Heating water bath adjusts temperature to 76 DEG C, is stirred to react 1.5h；
Step (C): 32 DEG C of addition phosphorous acid crystals are cooled to, are uniformly mixed；
Step (D): after being cooled to 32 DEG C, formalin is added dropwise, 4h is reacted after being then warming up to 80 DEG C, to after reaction
Obtain modified sodium lignosulfonate.
Wherein, the mass ratio of sodium lignin sulfonate and hydroquinone, epoxychloropropane and ethylenediamine is 10:4:2:1.5；Wood
The mass ratio of quality sodium sulfonate and phosphorous acid crystal, formalin is 10:3:4；The mass concentration of formalin is 37%, and
Formalin drips in 0.5h.
In the present embodiment, oxidant is tert-butyl hydroperoxide；The organic inhibitor of copper is methyl benzotriazazole, surface
Activating agent is alkyl alcohol ethoxylates, and stabilizer is urea.
The present embodiment is used to remove the preparation method of the stripping tin agent of the bad tin coating of semiconductor package part, including following step
It is rapid:
Step (1): it stocks up by the component of following weight percent:
Highly basic 40%, compound complex agent 6%, oxidant 0.3%, copper organic inhibitor 0.4%, surfactant
0.7%, stabilizer 0.3%, surplus are water；
Step (2): taking the water of 2/3 amount, sequentially adds highly basic, compound complex agent according to the ratio under agitation, sufficiently stirs
It mixes uniformly, premixed liquid I is made；
Step (3): taking remaining water, sequentially add according to the ratio under agitation oxidant, copper organic inhibitor and
Stabilizer stirs, and premixed liquid II is made；
Step (4): premixed liquid II being added into premixed liquid I under agitation, is stirred well to uniformly, then according to the ratio
Surfactant is added, continues to be stirred until homogeneous.
Embodiment 4:
The present embodiment is used to remove the stripping tin agent of the bad tin coating of semiconductor package part, by including following weight percent
Component is prepared: highly basic 45%, compound complex agent 8%, oxidant 0.4%, the organic inhibitor 0.6% of copper, surface-active
Agent 0.8%, stabilizer 0.5%, surplus are water.
Wherein, it is that 1:6 is mixed, and organic alkali is sodium methoxide with inorganic strong alkali that highly basic is organic alkali in mass ratio
It is mixed in mass ratio for 1:1 with quaternary ammonium base, inorganic strong alkali is sodium hydroxide.
Compound complex agent includes following components and parts by weight content: 35 parts of modified sodium lignosulfonate, sodium gluconate 15
Part, 12 parts of sodium potassium tartrate tetrahydrate, 8 parts of ethylenediamine tetraacetic methene sodium phosphate and 15 parts of coconut oil diethanol amide.
In the present embodiment modified sodium lignosulfonate preparation method the following steps are included:
Step (A): sodium lignin sulfonate powder is added to the water, stirring and dissolving be made mass concentration be 30% it is water-soluble
Hydroquinone is added in liquid, and regulation system pH value is 8, is placed in variable frequency microwave reactor, regulation power 300W is warming up to 94
DEG C, react 1h；
Step (B): above-mentioned reaction solution is taken out from microwave reactor, epoxychloropropane and ethylenediamine is added, using normal pressure
Heating water bath adjusts temperature to 70 DEG C, is stirred to react 2h；
Step (C): 30 DEG C of addition phosphorous acid crystals are cooled to, are uniformly mixed；
Step (D): after being cooled to 30 DEG C, formalin is added dropwise, 3h is reacted after being then warming up to 88 DEG C, to after reaction
Obtain modified sodium lignosulfonate.
Wherein, the mass ratio of sodium lignin sulfonate and hydroquinone, epoxychloropropane and ethylenediamine is 10:2:1:1.2；Wood
The mass ratio of quality sodium sulfonate and phosphorous acid crystal, formalin is 10:1.5:3；The mass concentration of formalin is 37%, and
And formalin drips in 0.5h.
In the present embodiment, oxidant is tert-butyl hydroperoxide；The organic inhibitor of copper is carboxy benzotriazole, surface
Activating agent is polyethylene glycol, and stabilizer is urea.
The present embodiment is used to remove the preparation method of the stripping tin agent of the bad tin coating of semiconductor package part, including following step
It is rapid:
Step (1): it stocks up by the component of following weight percent:
Highly basic 45%, compound complex agent 8%, oxidant 0.4%, copper organic inhibitor 0.6%, surfactant
0.8%, stabilizer 0.5%, surplus are water；
Step (2): taking the water of 1/2 amount, sequentially adds highly basic, compound complex agent according to the ratio under agitation, sufficiently stirs
It mixes uniformly, premixed liquid I is made；
Step (3): taking remaining water, sequentially add according to the ratio under agitation oxidant, copper organic inhibitor and
Stabilizer stirs, and premixed liquid II is made；
Step (4): premixed liquid II being added into premixed liquid I under agitation, is stirred well to uniformly, then according to the ratio
Surfactant is added, continues to be stirred until homogeneous.
Embodiment 5:
The present embodiment is used to remove the stripping tin agent of the bad tin coating of semiconductor package part, by including following weight percent
Component is prepared: highly basic 20%, compound complex agent 3%, oxidant 0.1%, the organic inhibitor 0.2% of copper, surface-active
Agent 0.2%, stabilizer 0.1%, surplus are water.
Wherein, it is that 1:4 is mixed, and organic alkali is ethyl alcohol with inorganic strong alkali that highly basic is organic alkali in mass ratio
Potassium, it with potassamide is that 2:1 is mixed that inorganic strong alkali is potassium hydroxide in mass ratio.
Compound complex agent includes following components and parts by weight content: 20 parts of modified sodium lignosulfonate, sodium gluconate 10
Part, 6 parts of sodium potassium tartrate tetrahydrate, 5 parts of ethylenediamine tetraacetic methene sodium phosphate and 8 parts of coconut oil diethanol amide.
In the present embodiment modified sodium lignosulfonate preparation method the following steps are included:
Step (A): sodium lignin sulfonate powder is added to the water, stirring and dissolving be made mass concentration be 30% it is water-soluble
Hydroquinone is added in liquid, and regulation system pH value is 9.5, is placed in variable frequency microwave reactor, regulation power 900W is warming up to
98 DEG C, react 1h；
Step (B): above-mentioned reaction solution is taken out from microwave reactor, epoxychloropropane and ethylenediamine is added, using normal pressure
Heating water bath adjusts temperature to 78 DEG C, is stirred to react 2h；
Step (C): 40 DEG C of addition phosphorous acid crystals are cooled to, are uniformly mixed；
Step (D): after being cooled to 40 DEG C, formalin is added dropwise, 2.5h is reacted after being then warming up to 95 DEG C, to the end of reacting
After obtain modified sodium lignosulfonate.
Wherein, the mass ratio of sodium lignin sulfonate and hydroquinone, epoxychloropropane and ethylenediamine is 10:3:1.2:1；Wood
The mass ratio of quality sodium sulfonate and phosphorous acid crystal, formalin is 10:2:3.5；The mass concentration of formalin is 32%, and
And formalin drips in 0.5h.
In the present embodiment, oxidant is tert-butyl hydroperoxide；The organic inhibitor of copper is benzotriazole, surface-active
Agent is polyethylene glycol, and stabilizer is thiocarbamide.
The present embodiment is used to remove the preparation method of the stripping tin agent of the bad tin coating of semiconductor package part, including following step
It is rapid:
Step (1): it stocks up by the component of following weight percent:
Highly basic 20%, compound complex agent 3%, oxidant 0.1%, copper organic inhibitor 0.2%, surfactant
0.2%, stabilizer 0.1%, surplus are water；
Step (2): taking the water of 1/2 amount, sequentially adds highly basic, compound complex agent according to the ratio under agitation, sufficiently stirs
It mixes uniformly, premixed liquid I is made；
Step (3): taking remaining water, sequentially add according to the ratio under agitation oxidant, copper organic inhibitor and
Stabilizer stirs, and premixed liquid II is made；
Step (4): premixed liquid II being added into premixed liquid I under agitation, is stirred well to uniformly, then according to the ratio
Surfactant is added, continues to be stirred until homogeneous.
Embodiment 6:
The present embodiment is used to remove the stripping tin agent of the bad tin coating of semiconductor package part, by including following weight percent
Component is prepared: highly basic 28%, compound complex agent 5%, oxidant 0.2%, the organic inhibitor 0.3% of copper, surface-active
Agent 0.4%, stabilizer 0.2%, surplus are water.
Wherein, it is that 1:2 is mixed, and organic alkali is the tert-butyl alcohol with inorganic strong alkali that highly basic is organic alkali in mass ratio
Sodium, it with Sodamide is that 1:1 is mixed that inorganic strong alkali is sodium hydroxide in mass ratio.
Compound complex agent includes following components and parts by weight content: 32 parts of modified sodium lignosulfonate, sodium gluconate 13
Part, 8 parts of sodium potassium tartrate tetrahydrate, 6 parts of ethylenediamine tetraacetic methene sodium phosphate and 10 parts of coconut oil diethanol amide.
In the present embodiment modified sodium lignosulfonate preparation method the following steps are included:
Step (A): sodium lignin sulfonate powder is added to the water, stirring and dissolving be made mass concentration be 30% it is water-soluble
Hydroquinone is added in liquid, and regulation system pH value is 9.5, is placed in variable frequency microwave reactor, regulation power 1000W is warming up to
98 DEG C, react 1h；
Step (B): above-mentioned reaction solution is taken out from microwave reactor, epoxychloropropane and ethylenediamine is added, using normal pressure
Heating water bath adjusts temperature to 78 DEG C, is stirred to react 2h；
Step (C): 40 DEG C of addition phosphorous acid crystals are cooled to, are uniformly mixed；
Step (D): after being cooled to 40 DEG C, formalin is added dropwise, 2.5h is reacted after being then warming up to 95 DEG C, to the end of reacting
After obtain modified sodium lignosulfonate.
Wherein, the mass ratio of sodium lignin sulfonate and hydroquinone, epoxychloropropane and ethylenediamine is 10:3:1.2:1；Wood
The mass ratio of quality sodium sulfonate and phosphorous acid crystal, formalin is 10:2:3.5；The mass concentration of formalin is 32%, and
And formalin drips in 0.5h.
In the present embodiment, oxidant is tert-butyl hydroperoxide；The organic inhibitor of copper is sulfamic acid and hydroxy benzo
Triazole mixes in mass ratio for 1:3, and surfactant is alkyl phenol polyoxyethylene ether, and stabilizer is that thiocarbamide is pressed with urea
Mass ratio mixes for 1:1.
The present embodiment is used to remove the preparation method of the stripping tin agent of the bad tin coating of semiconductor package part, including following step
It is rapid:
Step (1): it stocks up by the component of following weight percent:
Highly basic 28%, compound complex agent 5%, oxidant 0.2%, copper organic inhibitor 0.3%, surfactant
0.4%, stabilizer 0.2%, surplus are water；
Step (2): taking the water of 2/3 amount, sequentially adds highly basic, compound complex agent according to the ratio under agitation, sufficiently stirs
It mixes uniformly, premixed liquid I is made；
Step (3): taking remaining water, sequentially add according to the ratio under agitation oxidant, copper organic inhibitor and
Stabilizer stirs, and premixed liquid II is made；
Step (4): premixed liquid II being added into premixed liquid I under agitation, is stirred well to uniformly, then according to the ratio
Surfactant is added, continues to be stirred until homogeneous.
Embodiment 7:
The present embodiment is used to remove the stripping tin agent of the bad tin coating of semiconductor package part, by including following weight percent
Component is prepared: highly basic 30%, compound complex agent 4%, oxidant 0.2%, the organic inhibitor 0.2% of copper, surface-active
Agent 0.3%, stabilizer 0.1%, surplus are water.
Wherein, it is that 1:2 is mixed, and organic alkali is quaternary ammonium with inorganic strong alkali that highly basic is organic alkali in mass ratio
Alkali, it with Sodamide is that 1:2 is mixed that inorganic strong alkali is sodium hydroxide in mass ratio.
Compound complex agent includes following components and parts by weight content: 34 parts of modified sodium lignosulfonate, sodium gluconate 10
Part, 6 parts of sodium potassium tartrate tetrahydrate, 7 parts of ethylenediamine tetraacetic methene sodium phosphate and 13 parts of coconut oil diethanol amide.
In the present embodiment modified sodium lignosulfonate preparation method the following steps are included:
Step (A): sodium lignin sulfonate powder is added to the water, stirring and dissolving be made mass concentration be 40% it is water-soluble
Hydroquinone is added in liquid, and regulation system pH value is 10, is placed in variable frequency microwave reactor, regulation power 1200W is warming up to
100 DEG C, react 1h；
Step (B): above-mentioned reaction solution is taken out from microwave reactor, epoxychloropropane and ethylenediamine is added, using normal pressure
Heating water bath adjusts temperature to 70 DEG C, is stirred to react 2h；
Step (C): 38 DEG C of addition phosphorous acid crystals are cooled to, are uniformly mixed；
Step (D): after being cooled to 38 DEG C, formalin is added dropwise, 3.5h is reacted after being then warming up to 87 DEG C, to the end of reacting
After obtain modified sodium lignosulfonate.
Wherein, the mass ratio of sodium lignin sulfonate and hydroquinone, epoxychloropropane and ethylenediamine is 10:3:2:1；It is wooden
The mass ratio of plain sodium sulfonate and phosphorous acid crystal, formalin is 10:2:3；The mass concentration of formalin is 36%, and first
Aldehyde solution drips in 0.5h.
In the present embodiment, oxidant is tert-butyl hydroperoxide；The organic inhibitor of copper is sulfamic acid, methyl benzo three
Nitrogen azoles mixes in mass ratio for 2:1:1 with hydroxy benzo triazole, and surfactant is alkyl phenol polyoxyethylene ether and gathers
Ethylene glycol mixes in mass ratio for 1:4, and it with urea is that 1:3 is mixed that stabilizer is thiocarbamide in mass ratio.
The present embodiment is used to remove the preparation method of the stripping tin agent of the bad tin coating of semiconductor package part, including following step
It is rapid:
Step (1): it stocks up by the component of following weight percent:
Highly basic 30%, compound complex agent 4%, oxidant 0.2%, copper organic inhibitor 0.2%, surfactant
0.3%, stabilizer 0.1%, surplus are water；
Step (2): taking the water of 2/3 amount, sequentially adds highly basic, compound complex agent according to the ratio under agitation, sufficiently stirs
It mixes uniformly, premixed liquid I is made；
Step (3): taking remaining water, sequentially add according to the ratio under agitation oxidant, copper organic inhibitor and
Stabilizer stirs, and premixed liquid II is made；
Step (4): premixed liquid II being added into premixed liquid I under agitation, is stirred well to uniformly, then according to the ratio
Surfactant is added, continues to be stirred until homogeneous.
Embodiment 8:
The present embodiment is used to remove the stripping tin agent of the bad tin coating of semiconductor package part, by including following weight percent
Component is prepared: highly basic 42%, compound complex agent 8%, oxidant 0.3%, the organic inhibitor 0.5% of copper, surface-active
Agent 0.6%, stabilizer 0.4%, surplus are water.
Wherein, it is that 1:5 is mixed, and organic alkali is quaternary ammonium with inorganic strong alkali that highly basic is organic alkali in mass ratio
Alkali, it with Sodamide is that 3:1 is mixed that inorganic strong alkali is sodium hydroxide in mass ratio.
Compound complex agent includes following components and parts by weight content: 28 parts of modified sodium lignosulfonate, sodium gluconate 12
Part, 10 parts of sodium potassium tartrate tetrahydrate, 6 parts of ethylenediamine tetraacetic methene sodium phosphate and 9 parts of coconut oil diethanol amide.
In the present embodiment modified sodium lignosulfonate preparation method the following steps are included:
Step (A): sodium lignin sulfonate powder is added to the water, stirring and dissolving be made mass concentration be 40% it is water-soluble
Hydroquinone is added in liquid, and regulation system pH value is 10, is placed in variable frequency microwave reactor, regulation power 1200W is warming up to
100 DEG C, react 1h；
Step (B): above-mentioned reaction solution is taken out from microwave reactor, epoxychloropropane and ethylenediamine is added, using normal pressure
Heating water bath adjusts temperature to 70 DEG C, is stirred to react 2h；
Step (C): 38 DEG C of addition phosphorous acid crystals are cooled to, are uniformly mixed；
Step (D): after being cooled to 38 DEG C, formalin is added dropwise, 3.5h is reacted after being then warming up to 87 DEG C, to the end of reacting
After obtain modified sodium lignosulfonate.
Wherein, the mass ratio of sodium lignin sulfonate and hydroquinone, epoxychloropropane and ethylenediamine is 10:3:2:1；It is wooden
The mass ratio of plain sodium sulfonate and phosphorous acid crystal, formalin is 10:2:3；The mass concentration of formalin is 36%, and first
Aldehyde solution drips in 0.5h.
In the present embodiment, oxidant is tert-butyl hydroperoxide；The organic inhibitor of copper is sulfamic acid, benzotriazole
It is mixed in mass ratio for 1:1:2 with hydroxy benzo triazole, surfactant is alkyl alcohol ethoxylates, alkyl phenol is poly-
Ethylene oxide ether mixes in mass ratio for 2:1:3 with polyethylene glycol, and it with urea is that 1:5 is mixed that stabilizer is thiocarbamide in mass ratio
It forms.
The present embodiment is used to remove the preparation method of the stripping tin agent of the bad tin coating of semiconductor package part, including following step
It is rapid:
Step (1): it stocks up by the component of following weight percent:
Highly basic 42%, compound complex agent 8%, oxidant 0.3%, copper organic inhibitor 0.5%, surfactant
0.6%, stabilizer 0.4%, surplus are water；
Step (2): taking the water of 2/3 amount, sequentially adds highly basic, compound complex agent according to the ratio under agitation, sufficiently stirs
It mixes uniformly, premixed liquid I is made；
Step (3): taking remaining water, sequentially add according to the ratio under agitation oxidant, copper organic inhibitor and
Stabilizer stirs, and premixed liquid II is made；
Step (4): premixed liquid II being added into premixed liquid I under agitation, is stirred well to uniformly, then according to the ratio
Surfactant is added, continues to be stirred until homogeneous.
Comparative example:
Certain commercially available stripping tin agent is formulated following (%)
Highly basic 20%,
Citrate 2%.
M-nitrobenzene sodium sulfonate 10%,
Surplus is water.
Experimental condition: at 10 centimetres of 10 cm x on copper sheet, plated thickness is 15 microns of leypewter layer (95%
Tin, 5% lead) it is used as tin sample to be moved back.The stripping tin agent of embodiment 1-8 and comparative example is heated to 80 DEG C and maintains 80 DEG C,
Tin sample to be moved back is placed in the above-mentioned stripping tin agent of 200mL.
Test result is as shown in table 1.
Table 1
The above description of the embodiments is intended to facilitate ordinary skill in the art to understand and use the invention.
Person skilled in the art obviously easily can make various modifications to these embodiments, and described herein general
Principle is applied in other embodiments without having to go through creative labor.Therefore, the present invention is not limited to the above embodiments, ability
Field technique personnel announcement according to the present invention, improvement and modification made without departing from the scope of the present invention all should be of the invention
Within protection scope.
Claims (10)
1. a kind of for removing the stripping tin agent of the bad tin coating of semiconductor package part, which is characterized in that the stripping tin agent by include with
The component of lower weight percent is prepared: highly basic 20-45%, compound complex agent 3-8%, oxidant 0.1-0.4%, copper have
Machine corrosion inhibiter 0.2-0.6%, surfactant 0.2-0.8%, stabilizer 0.1-0.5%, surplus are water.
2. according to claim 1 a kind of for removing the stripping tin agent of the bad tin coating of semiconductor package part, feature exists
It is organic alkali in, the highly basic with inorganic strong alkali is in mass ratio that 1:2-6 is mixed.
3. according to claim 2 a kind of for removing the stripping tin agent of the bad tin coating of semiconductor package part, feature exists
In, the organic alkali include one or more of sodium methoxide, sodium ethoxide, potassium ethoxide, sodium tert-butoxide or quaternary ammonium base, it is described
Inorganic strong alkali include one or more of sodium hydroxide, potassium hydroxide, potassamide or Sodamide.
4. according to claim 1 a kind of for removing the stripping tin agent of the bad tin coating of semiconductor package part, feature exists
In the compound complex agent includes following components and parts by weight content: 20-35 parts of modified sodium lignosulfonate, gluconic acid
10-15 parts of sodium, 6-12 parts of sodium potassium tartrate tetrahydrate, 5-8 parts of ethylenediamine tetraacetic methene sodium phosphate and 8-15 parts of coconut oil diethanol amide.
5. according to claim 4 a kind of for removing the stripping tin agent of the bad tin coating of semiconductor package part, feature exists
In, the modified sodium lignosulfonate preparation method the following steps are included:
Step (A): sodium lignin sulfonate powder is added to the water, and the aqueous solution that mass concentration is 30-40% is made in stirring and dissolving,
Hydroquinone is added, regulation system pH value is 8-10, is placed in variable frequency microwave reactor, regulation power 300-1200W, is heated up
To 90-100 DEG C, 0.5-1h is reacted；
Step (B): above-mentioned reaction solution is taken out from microwave reactor, epoxychloropropane and ethylenediamine is added, using normal pressure water-bath
Heating adjusts temperature to 70-80 DEG C, is stirred to react 1-2h；
Step (C): it is cooled to 30-40 DEG C of addition phosphorous acid crystal, is uniformly mixed；
Step (D): after being cooled to 30-40 DEG C, formalin is added dropwise, 2-4h is reacted after being then warming up to 80-100 DEG C, wait react
After obtain modified sodium lignosulfonate.
6. according to claim 5 a kind of for removing the stripping tin agent of the bad tin coating of semiconductor package part, feature exists
In the mass ratio of the sodium lignin sulfonate and hydroquinone, epoxychloropropane and ethylenediamine is 10:2-4:1-2:1-1.5；
The mass ratio of the sodium lignin sulfonate and phosphorous acid crystal, formalin is 10:1.5-3:3-4；
The mass concentration of the formalin is 32-37%, and the formalin drips in 0.5h.
7. according to claim 1 a kind of for removing the stripping tin agent of the bad tin coating of semiconductor package part, feature exists
In the oxidant includes one or both of tert-butyl hydroperoxide or hydrogen peroxide.
8. according to claim 1 a kind of for removing the stripping tin agent of the bad tin coating of semiconductor package part, feature exists
In, the organic inhibitor of the copper include sulfamic acid, benzotriazole, carboxy benzotriazole, methyl benzotriazazole,
One or more of hydroxy benzo triazole or pyrrolidones.
9. according to claim 1 a kind of for removing the stripping tin agent of the bad tin coating of semiconductor package part, feature exists
In, the surfactant include one of polyethylene glycol, alkyl phenol polyoxyethylene ether or alkyl alcohol ethoxylates or
Several, the stabilizer includes one or both of thiocarbamide or urea.
10. it is a kind of as described in claim 1 for removing the preparation method of the stripping tin agent of the bad tin coating of semiconductor package part,
It is characterized in that, method includes the following steps:
Step (1): it stocks up by the component of following weight percent:
Highly basic 20-45%, compound complex agent 3-8%, oxidant 0.1-0.4%, the organic inhibitor 0.2-0.6% of copper, surface
Activating agent 0.2-0.8%, stabilizer 0.1-0.5%, surplus are water；
Step (2): taking the water of 1/2-2/3 amount, sequentially adds highly basic, compound complex agent according to the ratio under agitation, sufficiently stirs
It mixes uniformly, premixed liquid I is made；
Step (3): taking remaining water, sequentially adds oxidant, the organic inhibitor of copper and stabilization according to the ratio under agitation
Agent stirs, and premixed liquid II is made；
Step (4): premixed liquid II being added into premixed liquid I under agitation, is stirred well to uniformly, then be added according to the ratio
Surfactant continues to be stirred until homogeneous.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811489161.6A CN109536965B (en) | 2018-12-06 | 2018-12-06 | Tin stripping agent for removing poor tin coating of semiconductor packaging part and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811489161.6A CN109536965B (en) | 2018-12-06 | 2018-12-06 | Tin stripping agent for removing poor tin coating of semiconductor packaging part and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109536965A true CN109536965A (en) | 2019-03-29 |
| CN109536965B CN109536965B (en) | 2021-03-26 |
Family
ID=65853071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811489161.6A Active CN109536965B (en) | 2018-12-06 | 2018-12-06 | Tin stripping agent for removing poor tin coating of semiconductor packaging part and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109536965B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110093639A (en) * | 2019-04-22 | 2019-08-06 | 深圳市泓达环境科技有限公司 | A kind of shield tin additive and etching solution |
| CN113675166A (en) * | 2021-09-18 | 2021-11-19 | 江苏芯德半导体科技有限公司 | Passive element for fan-out type packaging, preparation method thereof and fan-out type packaging method |
| CN114351145A (en) * | 2021-12-30 | 2022-04-15 | 华南理工大学 | Tin and copper stripping liquid additive for hanger and preparation method and application thereof |
| CN116583026A (en) * | 2023-07-13 | 2023-08-11 | 深圳市板明科技股份有限公司 | Tin stripping method for IC carrier plate and application thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3604792A1 (en) * | 1986-02-15 | 1987-08-20 | Helmuth Supik | Process for the production of tin-free objects by deep-drawing or ironing tinned sheet iron |
| CN101748410A (en) * | 2008-12-11 | 2010-06-23 | 长沙铂鲨环保设备有限公司 | Metal-dissolving solution |
| CN101903988A (en) * | 2007-12-21 | 2010-12-01 | 和光纯药工业株式会社 | Etching agent, etching method and liquid for preparing etching agent |
| CN103429789A (en) * | 2011-03-22 | 2013-12-04 | 安美特德国有限公司 | Process for etching recessed structure filled with tin or tin alloy |
| CN104060269A (en) * | 2014-05-29 | 2014-09-24 | 深圳振华富电子有限公司 | Tin-stripping agent, preparation method of tin-stripping agent and tin-stripping method |
| CN104558633A (en) * | 2015-01-08 | 2015-04-29 | 华南理工大学 | Modified sodium lignin sulfonate chelating agent containing phosphonic acid group and preparation method thereof |
| CN105624681A (en) * | 2016-03-11 | 2016-06-01 | 中南大学 | Method for wet separation of electronic components in discarded printed circuit board and tin stripping agent |
-
2018
- 2018-12-06 CN CN201811489161.6A patent/CN109536965B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3604792A1 (en) * | 1986-02-15 | 1987-08-20 | Helmuth Supik | Process for the production of tin-free objects by deep-drawing or ironing tinned sheet iron |
| CN101903988A (en) * | 2007-12-21 | 2010-12-01 | 和光纯药工业株式会社 | Etching agent, etching method and liquid for preparing etching agent |
| CN101748410A (en) * | 2008-12-11 | 2010-06-23 | 长沙铂鲨环保设备有限公司 | Metal-dissolving solution |
| CN103429789A (en) * | 2011-03-22 | 2013-12-04 | 安美特德国有限公司 | Process for etching recessed structure filled with tin or tin alloy |
| CN104060269A (en) * | 2014-05-29 | 2014-09-24 | 深圳振华富电子有限公司 | Tin-stripping agent, preparation method of tin-stripping agent and tin-stripping method |
| CN104558633A (en) * | 2015-01-08 | 2015-04-29 | 华南理工大学 | Modified sodium lignin sulfonate chelating agent containing phosphonic acid group and preparation method thereof |
| CN105624681A (en) * | 2016-03-11 | 2016-06-01 | 中南大学 | Method for wet separation of electronic components in discarded printed circuit board and tin stripping agent |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110093639A (en) * | 2019-04-22 | 2019-08-06 | 深圳市泓达环境科技有限公司 | A kind of shield tin additive and etching solution |
| CN113675166A (en) * | 2021-09-18 | 2021-11-19 | 江苏芯德半导体科技有限公司 | Passive element for fan-out type packaging, preparation method thereof and fan-out type packaging method |
| CN114351145A (en) * | 2021-12-30 | 2022-04-15 | 华南理工大学 | Tin and copper stripping liquid additive for hanger and preparation method and application thereof |
| CN114351145B (en) * | 2021-12-30 | 2023-02-03 | 华南理工大学 | Tin and copper stripping liquid additive for hanger and preparation method and application thereof |
| CN116583026A (en) * | 2023-07-13 | 2023-08-11 | 深圳市板明科技股份有限公司 | Tin stripping method for IC carrier plate and application thereof |
| CN116583026B (en) * | 2023-07-13 | 2023-09-08 | 深圳市板明科技股份有限公司 | Tin stripping method for IC carrier plate and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109536965B (en) | 2021-03-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109536965A (en) | Stripping tin agent and preparation method thereof for removing the bad tin coating of semiconductor package part | |
| CN105714298B (en) | It is a kind of based on sulfuric acid-molysite system etching agent and preparation method thereof | |
| CN101962776A (en) | Solder stripping agent and preparation method thereof | |
| CN103866324B (en) | Selectivity tin etching solution | |
| CN105862042A (en) | Nickel stripping solution and preparation method and application thereof | |
| CN111826645A (en) | Browning liquid for inner layer copper foil of circuit board | |
| CN105734571A (en) | Metal surface micro-etching liquid | |
| CN109898115A (en) | Electro-coppering pre-treating method on a kind of quick aluminum substrate | |
| CN111206249A (en) | Chloride ion-resistant copper surface microetching agent and preparation method thereof | |
| TW448241B (en) | Electroless copper plating solution and process | |
| CN116752203B (en) | Lead frame tinning process | |
| CN107059008A (en) | One kind is used to strip scolding tin material tin stripping liquid and preparation method thereof on discarded PCB | |
| CN109734931A (en) | For removing the environment-friendly type glue-dispenser and preparation method thereof of burr after semiconductor packages | |
| JP2000297387A (en) | Surface treating agent for copper and copper alloy | |
| CN101358377B (en) | Titanium carbide electrolytic stripping solution and processing technique thereof | |
| CN1568380A (en) | Nickel-based surface treatment films excellent in heat-resistant adhesion to resin | |
| CN103173752B (en) | Plating solution formula, plating solution preparation method and application | |
| CN109576688A (en) | Chemical nickel-plating solution, nickel plating process and the nickel plating part of the hydrolyzate containing sapindoside | |
| CN112501615B (en) | Deplating solution for electroplated layer of external lead of integrated circuit and preparation method thereof | |
| CN111472027B (en) | Electrotinning additive and preparation method and use method thereof | |
| CN114507850A (en) | Chemical formula of environment-friendly plating solution for non-formaldehyde electroless copper plating on ceramic substrate by ink-jet printing | |
| CN112210778A (en) | Tin stripping liquid | |
| CN111117626A (en) | Flash etching liquid medicine and preparation method and application thereof | |
| CA2458305A1 (en) | Electrolytic method of and compositions for stripping electroless nickel | |
| CN116463621B (en) | Browning liquid for high-frequency high-speed circuit board and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Tin stripper for removing bad tin coating of semiconductor package and its preparation method Effective date of registration: 20221109 Granted publication date: 20210326 Pledgee: Shanghai Bank Co.,Ltd. Suzhou Branch Pledgor: JIANGSU XIYAN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Registration number: Y2022320010653 |