CN109526193B - Electromagnetic wave shielding film and method for producing same - Google Patents
Electromagnetic wave shielding film and method for producing same Download PDFInfo
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- CN109526193B CN109526193B CN201811320751.6A CN201811320751A CN109526193B CN 109526193 B CN109526193 B CN 109526193B CN 201811320751 A CN201811320751 A CN 201811320751A CN 109526193 B CN109526193 B CN 109526193B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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Abstract
The invention belongs to the technical field of electronics, and particularly relates to a preparation method of an electromagnetic wave shielding film, which comprises the following steps: obtaining a carrier layer, and preparing a protective layer on one surface of the carrier layer; and forming a metal lamination layer on the surface of the carrier layer far away from the protective layer by vacuum sputtering, wherein the metal lamination layer comprises a first metal protective layer, a metal functional layer and a second metal protective layer which are sequentially laminated on the surface of the carrier layer far away from the protective layer. According to the preparation method of the electromagnetic wave shielding film provided by the embodiment of the invention, the protective layer is formed on one side of the carrier layer by adopting a coating method, the metal lamination is formed on the other side of the carrier layer by adopting a vacuum sputtering method, and the film thickness can be controlled by controlling the sputtering time and the speed by the vacuum sputtering, so that the metal lamination film is formed, and the use of production raw materials is reduced. And the metal lamination formed by vacuum sputtering has the advantages of high film forming speed, uniform film layer, good stability, difficult falling of the film layer and simple preparation process.
Description
Technical Field
The invention belongs to the technical field of electronics, and particularly relates to an electromagnetic wave shielding film and a preparation method thereof.
Background
With the rapid development of the electronic industry, electronic products gradually develop towards miniaturization, lightweight, portability and high-density packaging, which greatly promotes the development of electronic components, the integration level of semiconductor chips is higher and higher, and the number of input/output ports (I/O) on the unit area of the electronic components is higher and higher. The improvement of the integration level puts higher requirements on an electronic packaging technology, and requires that electronic components are thinner and have better conductivity. In addition, in order to avoid signal interference caused by electromagnetic radiation and threat to human health, better electromagnetic shielding effectiveness is required for electronic products. Therefore, electromagnetic shielding materials are used in large quantities on the lines of electronic components. At present, the electromagnetic shielding material mainly has a conductive type, a filling type, an intrinsic type and a wave absorption type, and the preparation method mainly includes methods of attaching a metal foil, sputter plating, electroplating, chemical plating, coating a conductive material, and the like. The electromagnetic shielding film is a main form, and the requirement on the electromagnetic shielding film is higher and higher along with the increasing density of the wiring circuits of the flexible circuit board.
Traditionally, electromagnetic shielding films mainly include insulating layers, metal layers, conductive adhesive layers, etc., and the structure mainly has: forming an omnibearing conductive adhesive layer on the surface of the insulating layer; forming a metal layer on the surface of the insulating layer, and forming a conductive adhesive layer on the surface of the metal layer; and forming an insulating layer surface on the surface of the carrier layer, forming a metal layer on the surface of the insulating layer, and forming a conductive adhesive layer on the surface of the metal layer. In order to achieve the shielding effect, a large amount of noble metal is often used, which results in a larger thickness of the shielding film, reduced light transmittance, increased manufacturing cost, and also affects the application of the shielding film in the circuit of the electronic component. In addition, the manufacturing process is complex, the uniformity and the surface flatness of the film layer are difficult to control, and the conduction performance and the electromagnetic shielding performance of the electromagnetic shielding film are influenced.
Disclosure of Invention
The embodiment of the invention aims to provide a preparation method of an electromagnetic wave shielding film, and aims to solve the technical problems that the transmittance and the conduction performance of the shielding film are influenced by the excessively thick film layer of the existing electromagnetic wave shielding film which is difficult to prepare.
It is another object of an embodiment of the present invention to provide an electromagnetic wave shielding film.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for manufacturing an electromagnetic wave-shielding film, comprising the steps of:
obtaining a carrier layer, and preparing a protective layer on one surface of the carrier layer;
vacuum sputtering the surface of the carrier layer far away from the protective layer to form a metal lamination,
the metal lamination layer comprises a first metal protection layer, a metal functional layer and a second metal protection layer which are sequentially stacked on the surface, far away from the protection layer, of the carrier layer.
Preferably, the method for forming the metal lamination layer on the surface of the carrier layer far away from the protective layer by vacuum sputtering comprises the following steps:
vacuum sputtering a first metal target material on the surface of the support layer far away from the protective layer to form a first metal protective layer, wherein the first metal target material is selected from at least one of a titanium target, a cobalt target, a nickel target, a palladium target, a rhodium target, an indium target, a nobelium target or a tin target;
sputtering a metal target material on the surface of the first metal protective layer far away from the carrier layer in vacuum to form a metal functional layer, wherein the metal target material is selected from at least one of a silver target, a copper target, a gold target, an aluminum target or a nickel target;
and sputtering a second metal target material in vacuum on the surface of the metal functional layer far away from the first metal protective layer to form a second metal protective layer, wherein the second metal target material is selected from at least one of a titanium target, a cobalt target, a nickel target, a palladium target, a rhodium target, an indium target, a nobelium target or a tin target.
Preferably, the vacuum degree of the vacuum sputtering is 1 x 10-3Pa or less.
Preferably, the purity of the silver target, the copper target, the gold target, the aluminum target or the nickel target is 3N, 4N or 5N, and the vacuum sputtering speed of the silver target, the copper target, the gold target, the aluminum target or the nickel target is 3-7 m/min; and/or the presence of a gas in the gas,
the purity of the titanium target, cobalt target, nickel target, palladium target, rhodium target, indium target, nobelium target, or tin target is 3N, 4N, or 5N, and the speed of vacuum sputtering of the titanium target, cobalt target, nickel target, palladium target, rhodium target, indium target, nobelium target, or tin target is 0.5 to 2 m/min.
Preferably, the material of the carrier layer is selected from polyethylene naphthalate, polyethylene terephthalate, polybutylene terephthalate, polyphenylene sulfide or polyimide; and/or the presence of a gas in the gas,
the protective layer is made of materials selected from polyimide, polyethylene naphthalate, polyethylene terephthalate, polybutylene terephthalate, polyphenylene sulfide, epoxy resin ink, polyurethane ink or modified acrylic resin.
Accordingly, an electromagnetic wave shielding film, comprising: the carrier layer and the metal lamination layer formed on the carrier layer, the metal lamination layer comprises a first metal protective layer, a metal functional layer and a second metal protective layer which are sequentially stacked on one surface of the carrier layer, wherein the first metal protective layer is selected from one of a titanium layer, a cobalt layer, a nickel layer, a palladium layer, a rhodium layer, an indium layer, a nobelium layer and a tin layer, or the first metal protective layer is an alloy layer made of at least two metals of titanium, cobalt, nickel, palladium, rhodium, indium, tantalum and tin, and the thickness of the first metal protective layer is 1-5 nanometers;
the metal functional layer is selected from one of a silver layer, a copper layer, a gold layer, an aluminum layer or a nickel layer, or is an alloy layer made of at least two metals of silver, copper, gold, aluminum and nickel, and the thickness of the metal functional layer is 3-10 nanometers;
the second metal protection layer is one selected from a titanium layer, a cobalt layer, a nickel layer, a palladium layer, a rhodium layer, an indium layer, a nobelium layer and a tin layer, or the first metal protection layer is an alloy layer made of at least two metals of titanium, cobalt, nickel, palladium, rhodium, indium, nobelium and tin, and the thickness of the second metal protection layer is 1-5 nanometers;
the thickness of carrier layer is 3 ~ 15 microns.
Preferably, the material of the carrier layer is selected from polyethylene naphthalate, polyethylene terephthalate, polybutylene terephthalate, polyphenylene sulfide or polyimide, and the thickness of the carrier layer is 5-10 micrometers.
Preferably, the first metal protection layer and the second metal protection layer are simultaneously selected from titanium layers, the metal functional layer is selected from silver layers, and the material of the carrier layer is selected from polyethylene naphthalate.
Preferably, the electromagnetic wave shielding film further comprises a protective layer, the protective layer is formed on the surface of the carrier layer far away from the metal lamination layer, and the thickness of the protective layer is 25-50 micrometers.
Preferably, the material of the protective layer is selected from polyimide, polyethylene naphthalate, polyethylene terephthalate, polybutylene terephthalate, polyphenylene sulfide, epoxy resin ink, polyurethane ink, or modified acrylic resin.
According to the preparation method of the electromagnetic wave shielding film provided by the embodiment of the invention, the protective layer is formed on one side of the carrier layer by adopting a coating method, the metal lamination is formed on the other side of the carrier layer by adopting a vacuum sputtering method, and the film thickness can be controlled by controlling the sputtering time and the speed by the vacuum sputtering, so that the metal lamination film is formed, and the use of production raw materials is reduced. And the metal lamination formed by vacuum sputtering has the advantages of high film forming speed, uniform film layer, good stability, difficult falling of the film layer and simple preparation process.
The electromagnetic wave shielding film provided by the embodiment of the invention takes the first metal protection layer, the metal functional layer and the second metal protection layer as the metal lamination layer, wherein the metal functional layer has excellent conductivity and stability, and can effectively absorb and conduct electromagnetic waves, so that an electronic element is prevented from being interfered by the electromagnetic waves, and meanwhile, electric charges can be prevented from being retained on the electromagnetic wave shielding film, and abnormal discharge is inhibited. Therefore, the shielding film has good conductivity and electromagnetic shielding performance. The metal protection layers on the two sides of the metal functional layer can better protect the metal functional layer from being oxidized, so that the shielding film has better stability and longer service life. In addition, the electromagnetic wave shielding film provided by the embodiment of the invention has the advantages that the metal lamination layer and the carrier layer are very thin, so that the film layer is thin as a whole, the light transmission of the shielding film is ensured, the shielding film has wider application field, the production cost is reduced, the resource is saved, and the electromagnetic wave shielding film is more environment-friendly.
Drawings
Fig. 1 is a schematic structural view of an electromagnetic wave shielding film according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and technical effects of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments obtained by a person of ordinary skill in the art without any inventive step in connection with the embodiments of the present invention shall fall within the scope of protection of the present invention.
In the description of the present invention, it is to be understood that the terms "first", "second" and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
As shown in fig. 1, an embodiment of the present invention provides a method for manufacturing an electromagnetic wave shielding film, including the steps of:
s10, obtaining a carrier layer 20, and preparing a protective layer 10 on one surface of the carrier layer 20;
s20, forming a metal lamination 30 on the surface of the carrier layer 20 far away from the protective layer 10 by vacuum sputtering,
the metal laminate 30 includes a first metal protective layer 31, a metal functional layer 32 and a second metal protective layer 33, which are sequentially stacked on the surface of the carrier layer away from the protective layer.
According to the preparation method of the electromagnetic wave shielding film provided by the embodiment of the invention, the protective layer 10 is prepared on one side of the carrier layer 20, and the metal lamination layer 30 is formed on the other side of the carrier layer 20 through vacuum sputtering, wherein the thickness of the film layer can be controlled through controlling the sputtering time through the vacuum sputtering, so that the metal lamination layer 30 film is formed, and the use of production raw materials is reduced. And the metal lamination layer 30 formed by vacuum sputtering has the advantages of high film forming speed, uniform film layer, good stability, difficult falling of the film layer and simple preparation process.
Specifically, in the step S10, the carrier layer 20 is obtained, and the protective layer 10 is prepared on one surface of the carrier layer 20. The preparation method can adopt a coating mode and the like, and preferably adopts a high-precision laminating machine to carry out coating. A protective layer 10 is coated on one side of the carrier layer 20, and during film coating, the surfaces of the carrier layer 20 film and the protective film are kept flat, so that impurities, bubbles and the like are prevented from being introduced. Because the carrier film layer is thin, the coating tension should be controlled below 5N, and the plasma wind is carried out on the film layer to remove static electricity after the coating is finished.
The preparation method in the embodiment of the present invention is not particularly limited as long as the above effects can be achieved.
As a preferred embodiment, the material of the carrier layer 20 is selected from polyethylene naphthalate, polyethylene terephthalate, polybutylene terephthalate, polyphenylene sulfide, or polyimide. Further preferably, the material of the carrier layer 20 is selected from polyethylene naphthalate. The naphthalene ring structure enables the polyethylene naphthalate film to have higher physical and mechanical properties, gas barrier property, chemical stability, heat resistance, ultraviolet resistance, radiation resistance and the like. In addition, the polyethylene naphthalate film has excellent mechanical properties, and the elastic modulus, strength, creep and life thereof can be maintained to a considerable extent even under high temperature and high pressure.
As a preferred embodiment, the material of the protective layer 10 is selected from polyimide, polyethylene naphthalate, polyethylene terephthalate, polybutylene terephthalate, polyphenylene sulfide, epoxy resin ink, polyurethane ink, or modified acrylic resin. Because the carrier layer 20 is a thin film and is only 3-15 micrometers, the base material film is too thin to facilitate the operations of forming the metal lamination layer 30 and the like in the subsequent process, the protective layer 10 is introduced to be formed on the surface of the carrier layer 20 far away from the metal lamination layer 30, the effect of supporting the carrier film layer is mainly achieved, and the subsequent process is convenient to carry out. Preferably, the material of the protective layer 10 is selected from polyethylene terephthalate. The polyethylene terephthalate has low cost, is obtained and is convenient to use.
In some preferred embodiments, the material of the carrier layer 20 is selected from polyethylene naphthalate, polyethylene terephthalate, polybutylene terephthalate, polyphenylene sulfide, or polyimide. The material of the protective layer 10 is selected from polyimide, polyethylene naphthalate, polyethylene terephthalate, polybutylene terephthalate, polyphenylene sulfide, epoxy resin ink, polyurethane ink, or modified acrylic resin. Further preferably, the material of the protective layer 10 is selected from polyethylene terephthalate and the material of the carrier layer 20 is selected from polyethylene naphthalate.
Specifically, in the step S20, a metal stack 30 is formed on a surface of the carrier layer 20 away from the protective layer 10 by vacuum sputtering, wherein the metal stack 30 includes a first metal protective layer 31, a metal functional layer 32, and a second metal protective layer 33 sequentially stacked on a surface of the carrier layer away from the protective layer.
The embodiment of the present invention forms the metal stack 30 on the surface of the carrier layer 20 by vacuum sputtering. Specifically, the vacuum sputtering method includes: mounting a target material, loading a carrier layer 20, vacuum degassing, injecting inert gas, sputtering, unloading, checking, packaging and the like.
The target material mounting method specifically comprises the following steps: and mounting the metal target to be sputtered to a corresponding position.
The vacuum degassing comprises the following steps: after the cabin is closed, the machine is started to preheat for 60-100 minutes, and then the coarse shaft pump is started to vacuumize to enable the vacuum degree to reach 1 x 103～1*102Pa, then opening the Roots pump to continue vacuumizing until the vacuum degree reaches 1 x 10-8 x 10Pa, and finally opening the molecular pump to enable the vacuum degree to reach 1 x 10-2～1*10-3Pa. The evacuation of the protective layer 10 and the carrier layer 20 takes place simultaneously with the evacuation.
Preferably, the vacuum degassing step is specifically: after the cabin is closed, the machine is started to preheat for 60 minutes, the coarse shaft pump is started to vacuumize to ensure that the vacuum degree reaches 6X 102Pa, then the roots pump is started to continue vacuuming until the vacuum degree reaches 5X 10Pa, and finally the molecular pump is started to ensure that the vacuum degree reaches 1X 10Pa-3Pa. The evacuation of the protective layer 10 and the carrier layer 20 takes place simultaneously with the evacuation.
The injected inert gas can be nitrogen, argon or helium, the pressure is 1-6 Pa, and the supply amount is 30-60 ppm. Specifically, the pressure may be 2Pa, 4Pa, or 5Pa, and the supply amount may be 30ppm, 40ppm, or 50 ppm.
The sputtering method specifically comprises the following steps: spreading the carrier layer 20, enabling the side of the carrier layer 20 far away from the protective layer 10 to receive sputtering of a target, cleaning an ion source, then performing sputtering of a metal target, and rolling the carrier layer 20 after sputtering is completed to obtain the shielding film sputtered with the metal lamination 30.
The shielding film can be further unreeled in the subsequent use process, cut according to the actual use condition, the protective film is pulled off, and the shielding film is used or coiled for standby.
As a preferred embodiment, a first metal target material is vacuum sputtered on the surface of the support layer 20 away from the protective layer 10 to form a first metal protective layer 31, and the first metal target 31 material is at least one selected from a titanium target, a cobalt target, a nickel target, a palladium target, a rhodium target, an indium target, a nobelium target, and a tin target; sputtering a metal target material on the surface of the first metal protection layer 31 far away from the carrier layer 20 in vacuum to form a metal functional layer 32, wherein the metal target material is selected from at least one of a silver target, a copper target, a gold target, an aluminum target or a nickel target; a second metal target material selected from at least one of a titanium target, a cobalt target, a nickel target, a palladium target, a rhodium target, an indium target, a nobelium target, and a tin target is vacuum sputtered on the surface of the metal functional layer 32 away from the first metal protective layer 31 to form a second metal protective layer 33. The metal laminate 30 structure of the first metal protective layer 31-the metal functional layer 32-the second metal protective layer 33 is formed, and at the same time, the layer structure of the electromagnetic wave-shielding film of the protective layer 10-the carrier layer 20-the first metal protective layer 31-the metal functional layer 32-the second metal protective layer 33 is formed.
As a preferred embodiment, the vacuum degree of vacuum sputtering is 1 x 10-3Pa or less. The vacuum level of the cavity of the sputtering machine reaches 1 x 10-3Pa or less, film formation is started.
As a preferred embodiment, the purity of the silver target, the copper target, the gold target, the aluminum target or the nickel target is 3N, 4N or 5N, and the vacuum sputtering speed of the silver target, the copper target, the gold target, the aluminum target or the nickel target is 3-7 m/min. The relationship between the purity of the film and the purity of the target material is extremely large, and the higher the purity of the target material is, the higher the purity of the film formed by sputtering is, the better the performance is. Preferably, the purity of the silver target, copper target, gold target, aluminum target or nickel target is 4N. The vacuum sputtering speed can affect the film forming uniformity and the film performance. The sputtering speed is too fast, so that the film forming is uneven, the compactness in the film is influenced by too slow sputtering speed, and the film layer is not dense enough and has poor continuity. When the vacuum sputtering speed of the silver target, the copper target, the gold target, the aluminum target or the nickel target is 3-7 m/min, the silver target, the copper target, the gold target, the aluminum target or the nickel target have the best film forming property, and the performance of the formed metal functional layer 32 film is the best.
In a preferred embodiment, the purity of the titanium target, the cobalt target, the nickel target, the palladium target, the rhodium target, the indium target, the nobelium target, or the tin target is 3N, 4N, or 5N, and the vacuum sputtering rate of the titanium target, the cobalt target, the nickel target, the palladium target, the rhodium target, the indium target, the nobelium target, or the tin target is 0.5 to 2 m/min. Preferably, the titanium target, cobalt target, nickel target, palladium target, rhodium target, indium target, nobelium target, or tin target has a purity of 3N. When the vacuum sputtering speed of the titanium target, the cobalt target, the nickel target, the palladium target, the rhodium target, the indium target, the nobelium target, or the tin target is 0.5 to 2m/min, the titanium target, the cobalt target, the nickel target, the palladium target, the rhodium target, the indium target, the nobelium target, or the tin target has an optimum film formation property, and the first metal protective layer 31 and the second metal protective layer 33 formed have an optimum film performance.
As shown in fig. 1, an embodiment of the present invention further provides an electromagnetic wave shielding film, including: a carrier layer 20 and a metal laminate 30 formed on the carrier layer, wherein the metal laminate 30 includes a first metal protective layer 31, a metal functional layer 32 and a second metal protective layer 33 sequentially stacked on one surface of the carrier layer, wherein the first metal protective layer 31 is one selected from a titanium layer, a cobalt layer, a nickel layer, a palladium layer, a rhodium layer, an indium layer, a nobel layer and a tin layer, or the first metal protective layer 31 is an alloy layer made of at least two metals selected from titanium, cobalt, nickel, palladium, rhodium, indium, nobel and tin, and the thickness of the first metal protective layer 31 is 1 to 5 nm; the metal functional layer 32 is selected from one of a silver layer, a copper layer, a gold layer, an aluminum layer or a nickel layer, or is an alloy layer made of at least two metals of silver, copper, gold, aluminum and nickel, and the thickness of the metal functional layer 32 is 3-10 nanometers; the second metal protection layer 33 is one selected from a titanium layer, a cobalt layer, a nickel layer, a palladium layer, a rhodium layer, an indium layer, a nobelium layer, and a tin layer, or the second metal protection layer 33 is an alloy layer made of at least two metals selected from titanium, cobalt, nickel, palladium, rhodium, indium, nobelium, and tin, and the second metal protection layer 33 has a thickness of 1 to 5 nm; the thickness of carrier layer is 3 ~ 15 microns.
The electromagnetic wave shielding film provided by the embodiment of the invention uses the first metal protection layer 31, the metal functional layer 32 and the second metal protection layer 33 as the metal lamination layer 30, wherein the metal functional layer 32 has excellent conductivity and stability, and can effectively absorb and conduct electromagnetic waves, thereby preventing electronic components from being interfered by the electromagnetic waves, preventing electric charges from being retained on the electromagnetic wave shielding film, and inhibiting abnormal discharge. Therefore, the shielding film has good conductivity and electromagnetic shielding performance. The metal protective layers on the two sides of the metal functional layer 32 can better protect the metal functional layer 32 from being oxidized, so that the shielding film has better stability and longer service life. In addition, in the electromagnetic wave shielding film provided by the embodiment of the invention, the metal lamination layer 30 and the carrier layer 20 are very thin, so that the film layer is thin as a whole, the light transmission of the shielding film is ensured, the shielding film has wider application field, the production cost is reduced, the resource is saved, and the electromagnetic wave shielding film is more environment-friendly.
Specifically, the carrier layer 20 is 3 to 15 micrometers thick and mainly serves as a carrier of the shielding film. The support layer 20 may specifically have a thickness of 5 microns, 8 microns, 10 microns, 12 microns, 13 microns, etc. The metal laminate 30 includes a first metal protective layer 31, a metal functional layer 32, and a second metal protective layer 33, which are sequentially laminated on one surface of the carrier layer.
The metal functional layer 32 is selected from one of a silver layer, a copper layer, a gold layer, an aluminum layer or a nickel layer, or the metal functional layer 32 is an alloy layer made of at least two metals of silver, copper, gold, aluminum and nickel. The silver, copper, gold, aluminum, nickel, or other elements have excellent conductivity and stability, can effectively absorb and conduct electromagnetic waves, and are the main body of the metal laminate 30 and the shielding film for electromagnetic waves. The thickness of the metal functional layer is 3-10 nanometers in some embodiments, the metal functional layer 32 is a metal layer made of silver, copper, gold, aluminum or nickel elements. In other embodiments, the metal functional layer 32 is an alloy layer composed of two or more of silver, copper, gold, aluminum, and nickel. Preferably, the metallic functional layer 32 is a silver layer composed of elemental silver.
The first metal protection layer 31 and the second metal protection layer 33 are respectively formed on both sides of the metal functional layer 32, and the metal protection layers are formed of one or more elements selected from titanium, cobalt, nickel, palladium, rhodium, indium, nobelium, and tin, and the metal elements selected from titanium, cobalt, nickel, palladium, rhodium, indium, nobelium, and tin have excellent corrosion resistance, heat resistance, and the like, and can better protect the metal functional layer 32 from oxidation, thereby providing a shielding film with better stability and longer service life. The metal materials in the first metal protection layer 31 and the second metal protection layer 33 may be the same or different. Preferably, the first metal protection layer 31 is composed of titanium element. Preferably, the second metal cap layer 33 is formed using titanium element. Further preferably, the materials of the first metal protection layer 31 and the second metal protection layer 33 are both titanium. Titanium is arranged on two sides of the metal functional layer 32 as metal protective layers, which can better protect the metal functional layer 32 from being oxidized.
As a most preferred embodiment, the first metal protection layer 31 and the second metal protection layer 33 are both titanium layers, and the metal functional layer 32 is a silver layer, i.e. the metal stack 30 is a stack structure of titanium layer-silver layer-titanium layer. The metal silver layer has more excellent conductivity and stability, can effectively absorb and conduct electromagnetic waves, and has wide raw material source and low cost. The metal titanium layer can better protect the silver layer from being oxidized, so that the shielding film has better stability and longer service life. The thickness of the metal functional layer 32 may be 3 nm, 5 nm, 6 nm, 8 nm, 9 nm, or the like.
The thickness of the first metal protection layer 31 may be 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, or the like.
The thickness of the second metal protection layer 33 may be 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, or the like.
As a preferred embodiment, the material of the carrier layer 20 is selected from polyethylene naphthalate, polyethylene terephthalate, polybutylene terephthalate, polyphenylene sulfide or polyimide, and the thickness of the carrier layer 20 is 5-10 micrometers. Preferably, the carrier layer 20 is made of polyethylene naphthalate, and the naphthalene ring structure enables the polyethylene naphthalate film to have higher physical and mechanical properties, gas barrier properties, chemical stability, heat resistance, ultraviolet resistance, radiation resistance and the like. In addition, the polyethylene naphthalate film has excellent mechanical properties, and the elastic modulus, strength, creep and life thereof can be maintained to a considerable extent even under high temperature and high pressure.
As a preferred embodiment, the electromagnetic wave shielding film further includes a protective layer 10, the protective layer 10 is formed on a surface of the carrier layer 20 away from the metal stack 30, and a thickness of the protective layer 10 is 25 to 50 micrometers. Because the carrier layer 20 is a thin film and is only 3-15 micrometers, the base material film is too thin to facilitate the operations of forming the metal lamination layer 30 and the like in the subsequent process, the protective layer 10 is introduced to be formed on the surface of the carrier layer 20 far away from the metal lamination layer 30, the effect of supporting the carrier film layer is mainly achieved, and the subsequent process is convenient to carry out. The thickness of the protective layer 10 may specifically be 25 micrometers, 30 micrometers, 35 micrometers, 40 micrometers, 45 micrometers, 48 micrometers, 50 micrometers, or the like.
As a preferred embodiment, the material of the protective layer 10 is selected from polyimide, polyethylene naphthalate, polyethylene terephthalate, polybutylene terephthalate, polyphenylene sulfide, epoxy resin ink, polyurethane ink, or modified acrylic resin. Preferably, the protective layer 10 and the carrier layer 20 are not simultaneously selected from the same polymer film. More preferably, the material of the protective layer 10 is selected from polyethylene terephthalate, which is low cost, easy to obtain, and convenient to use.
The technical solution of the above invention is illustrated by a plurality of examples below.
Example 1
An electromagnetic wave shielding film.
A 5 micron polyethylene naphthalate film was used as support layer 20;
coating a polyethylene glycol terephthalate protective layer 10 with the thickness of 28 microns on the carrier layer 20 by using a high-precision film coating machine;
then passing through a high-precision sputtering machine, and the vacuum level is 1 x 10-3Sputtering a titanium target, a silver target and a titanium target on the surface of the carrier layer 20 far away from the protective layer 10 under the condition of Pa and 50ppm argon gas in sequence to form a first metal in sequenceA protective layer 31, a metal functional layer 32 and a second metal protective layer 33. The thickness of the first metal protection layer 31 is 2 nm, the thickness of the metal functional layer 32 is 5 nm, and the thickness of the second metal protection layer 33 is 2 nm.
An electromagnetic wave shielding film is obtained.
The electromagnetic wave-shielding film was subjected to performance tests such as thickness, surface resistance, high temperature and high humidity (temperature 85 ℃, humidity 85%) 120h, transmittance, etc., and the results are shown in table 1 below:
TABLE 1
The analysis proves that the electromagnetic wave shielding film prepared by the embodiment of the invention has the advantages of small thickness, small surface resistance and good conductivity, and can absorb and dredge redundant electromagnetic waves of electronic elements in time. The electromagnetic wave shielding film has stable performance and good light transmittance.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (9)
1. A method for producing an electromagnetic wave shielding film, comprising the steps of:
obtaining a carrier layer, and preparing a protective layer on one surface of the carrier layer;
vacuum sputtering the surface of the carrier layer far away from the protective layer to form a metal lamination,
the metal lamination layer comprises a first metal protection layer, a metal functional layer and a second metal protection layer which are sequentially stacked on the surface of the carrier layer far away from the protection layer;
the thickness of the carrier layer is 3-15 micrometers, the thickness of the metal functional layer is 3-10 nanometers, the thickness of the first metal protective layer is 1-5 nanometers, and the thickness of the second metal protective layer is 1-5 nanometers;
the method for forming the metal lamination on the surface of the carrier layer far away from the protective layer by vacuum sputtering comprises the following steps:
vacuum sputtering a first metal target material on the surface of the support layer far away from the protective layer to form a first metal protective layer, wherein the first metal target material is selected from at least one of a titanium target, a cobalt target, a nickel target, a palladium target, a rhodium target, an indium target, a nobelium target or a tin target;
sputtering a metal target material on the surface of the first metal protective layer far away from the carrier layer in vacuum to form a metal functional layer, wherein the metal target material is selected from at least one of a silver target, a copper target, a gold target, an aluminum target or a nickel target;
and sputtering a second metal target material in vacuum on the surface of the metal functional layer far away from the first metal protective layer to form a second metal protective layer, wherein the second metal target material is selected from at least one of a titanium target, a cobalt target, a nickel target, a palladium target, a rhodium target, an indium target, a nobelium target or a tin target.
2. The method for manufacturing an electromagnetic wave-shielding film according to claim 1, wherein the degree of vacuum of the vacuum sputtering is 1 x 10-3Pa or less.
3. The method for preparing an electromagnetic wave-shielding film according to claim 2, wherein the purity of the silver target, the copper target, the gold target, the aluminum target, or the nickel target is 3N, 4N, or 5N, and the speed of vacuum sputtering of the silver target, the copper target, the gold target, the aluminum target, or the nickel target is 3 to 7 m/min; and/or the presence of a gas in the gas,
the purity of the titanium target, cobalt target, nickel target, palladium target, rhodium target, indium target, nobelium target, or tin target is 3N, 4N, or 5N, and the speed of vacuum sputtering of the titanium target, cobalt target, nickel target, palladium target, rhodium target, indium target, nobelium target, or tin target is 0.5 to 2 m/min.
4. The method for preparing an electromagnetic wave-shielding film as claimed in claim 3, wherein the material of the carrier layer is selected from one of polyethylene naphthalate, polyethylene terephthalate, polybutylene terephthalate, polyphenylene sulfide, or polyimide; and/or the presence of a gas in the gas,
the material of the protective layer is selected from one of polyimide, polyethylene naphthalate, polyethylene terephthalate, polybutylene terephthalate, polyphenylene sulfide, epoxy resin ink, polyurethane ink or modified acrylic resin.
5. An electromagnetic wave-shielding film produced by the method according to any one of claims 1 to 4, comprising: the carrier layer and the metal lamination layer formed on the carrier layer, the metal lamination layer comprises a first metal protective layer, a metal functional layer and a second metal protective layer which are sequentially laminated on one surface of the carrier layer,
the first metal protection layer is one selected from a titanium layer, a cobalt layer, a nickel layer, a palladium layer, a rhodium layer, an indium layer, a nobelium layer and a tin layer, or an alloy layer made of at least two metals selected from titanium, cobalt, nickel, palladium, rhodium, indium, nobelium and tin, and the thickness of the first metal protection layer is 1-5 nanometers;
the metal functional layer is selected from one of a silver layer, a copper layer, a gold layer, an aluminum layer or a nickel layer, or is an alloy layer made of at least two metals of silver, copper, gold, aluminum and nickel, and the thickness of the metal functional layer is 3-10 nanometers;
the second metal protection layer is one selected from a titanium layer, a cobalt layer, a nickel layer, a palladium layer, a rhodium layer, an indium layer, a nobelium layer and a tin layer, or is an alloy layer made of at least two metals of titanium, cobalt, nickel, palladium, rhodium, indium, nobelium and tin, and the thickness of the second metal protection layer is 1-5 nanometers;
the thickness of carrier layer is 3 ~ 15 microns.
6. The electromagnetic wave-shielding film according to claim 5, wherein the first metal protective layer and the second metal protective layer are simultaneously selected from titanium layers, and the metal functional layer is selected from silver layers.
7. The electromagnetic wave-shielding film according to claim 6, wherein the material of the carrier layer is selected from polyethylene naphthalate, polyethylene terephthalate, polybutylene terephthalate, polyphenylene sulfide, or polyimide, and the thickness of the carrier layer is 5 to 10 μm.
8. The electromagnetic wave-shielding film according to any one of claims 5 to 7, further comprising a protective layer formed on a surface of the carrier layer away from the metal laminate layer, wherein the protective layer has a thickness of 25 to 50 μm.
9. The electromagnetic wave-shielding film according to claim 8, wherein a material of the protective layer is selected from polyimide, polyethylene naphthalate, polyethylene terephthalate, polybutylene terephthalate, polyphenylene sulfide, epoxy resin ink, polyurethane ink, or modified acrylic resin.
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| CN105246313A (en) * | 2015-09-29 | 2016-01-13 | 朱春芳 | Electromagnetic wave shielding film, printed circuit board including shielding film and preparation method of circuit board |
| CN107227120A (en) * | 2017-07-20 | 2017-10-03 | 海宁卓泰电子材料有限公司 | A kind of electromagnetic shielding film and preparation method thereof |
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| CN105246313A (en) * | 2015-09-29 | 2016-01-13 | 朱春芳 | Electromagnetic wave shielding film, printed circuit board including shielding film and preparation method of circuit board |
| CN107227120A (en) * | 2017-07-20 | 2017-10-03 | 海宁卓泰电子材料有限公司 | A kind of electromagnetic shielding film and preparation method thereof |
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