CN109518282A - Contain high grit wedge shape hairbrush for what silicon flannelette wedge angle and seamed edge round and smoothization were handled - Google Patents
Contain high grit wedge shape hairbrush for what silicon flannelette wedge angle and seamed edge round and smoothization were handled Download PDFInfo
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- CN109518282A CN109518282A CN201811420179.0A CN201811420179A CN109518282A CN 109518282 A CN109518282 A CN 109518282A CN 201811420179 A CN201811420179 A CN 201811420179A CN 109518282 A CN109518282 A CN 109518282A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/125—Deposition of organic active material using liquid deposition, e.g. spin coating using electrolytic deposition e.g. in-situ electropolymerisation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The present invention disclose it is a kind of for silicon flannelette wedge angle and seamed edge round and smoothization handle containing high grit wedge shape hairbrush, including bristle holder plate and several bristles being fixed in carding fixed plate；Bristle includes the wedge-shaped bristle head of cylinder body and lower part；Wedge-shaped bristle head spreads colored Miss and is attached with several abrasive grains；The length of cylinder body is L, diameter d；Draw ratio L/d < 40.The present invention uses bristle draw ratio L/d < 40, wedge-shaped bristle head length is irregular, tip angle is less than 70 ° of flannelette tower paddy angle, and bristle head surface has the design of a large amount of abrasive grains, round and smoothization processing is carried out using pyramid suede structure of the abrasive grains to silicon wafer, solve the problems, such as that subsequent thin film can not be completely covered, improve perovskite/crystal silicon lamination solar cell photoelectric conversion efficiency, and operation is simple, it is easy to make, significant effect simultaneously, is conducive to high efficiency perovskite/crystal silicon lamination solar cell industrialized production.
Description
Technical field
The invention belongs to perovskite/crystal silicon stacked solar cell, cascade solar cell fields, in particular to a kind of to be used for silicon flannelette wedge angle and rib
Round and smoothization processing in side contains high grit wedge shape hairbrush.
Background technique
Organic inorganic hybridization perovskite solar battery is because of its incident photon-to-electron conversion efficiency with superelevation, simple cheap preparation
Technique and equipment, can solwution method low temperature preparation the advantages that, receive the extensive concern of whole world academia and industrial circle in recent years.
End in November, 2018, the peak efficiency of the unijunction perovskite solar battery authenticated has reached 23.4%.It is higher
Photoelectric conversion efficiency is one of the core objective of photovoltaic cell technology development always.However the light of unijunction perovskite solar battery
Photoelectric transformation efficiency can not be more than Xiao Keli-Kui Yise limit theory efficiency.Multijunction solar cell, i.e. laminated cell are by having not
Solar subcells with band gap form, and are a kind of mature effective modes for breaking through Xiao Keli-Kui Yise limit theory efficiency,
Have been widely used for traditional silicon, gallium arsenide solar cell.Silicon solar cell is that occupy the market share at present maximum
Mainstream photovoltaic technology.The band gap of monocrystalline silicon is about 1.1eV, is the sub- battery of ideal narrow band gap.Organic inorganic hybridization perovskite
Material and full-inorganic perovskite material have the characteristics that band gap is continuously adjusted (1.25-2.0eV).Based on These characteristics, perovskite/
Silicon lamination photovoltaic cell technology, which becomes, realizes one of ultra high efficiency, key subjects of inexpensive photovoltaic power generation technology.
Silion cell top usually has the suede structure of imitative pyramid pattern, captures ability with stronger light, can be with
The efficiency of light absorption of battery is significantly improved, and then improves the short-circuit current density of battery.For the crystal silicon/calcium titanium for obtaining excellent properties
Mine lamination solar cell needs to be sequentially prepared the perovskite with imitative pyramid pattern on the silicon flannelette of imitative pyramid pattern
The function films layer such as material, hole transmission layer.Pyramid flannelette usually has sharp pinnacle of a pagoda and seamed edge, these are all subsequent
It is easy to produce the position of defect in deposition process, can not be completely covered so as to cause subsequent deposition film, causes battery short circuit, drop
Low calcium titanium ore/crystal silicon lamination solar cell photoelectric conversion efficiency.Therefore, it is necessary to be handled pyramid flannelette to solve
The problem of subsequent thin film can not be completely covered, but the high light trapping structure of pyramid flannelette will not be destroyed again simultaneously.
The prior art corrodes pyramid wedge angle and tower paddy using a kind of chemical corrosion method, but with regard to the original of chemical attack
It is thin not can solve subsequent perovskite still it is found that the rounding off that this method is prepared is not up to crystal nucleation size for reason
There is exposed phenomenon in film deposition.Therefore, it is necessary to the pyramid suede structure progress round and smoothization processing to silicon wafer is subsequent to solve
The problem of film can not be completely covered improves perovskite/crystal silicon lamination solar cell photoelectric conversion efficiency.
Summary of the invention
Contain high grit wedge for what silicon flannelette wedge angle and seamed edge round and smoothization were handled the purpose of the present invention is to provide a kind of
Shape hairbrush, the device can pyramid suede structure to silicon wafer carry out round and smoothization processing, solving subsequent thin film can not cover completely
The problem of lid, improves perovskite/crystal silicon lamination solar cell photoelectric conversion efficiency.
In order to achieve the above objectives, the technical solution adopted by the present invention are as follows:
Contain high grit wedge shape hairbrush for what silicon flannelette wedge angle and seamed edge round and smoothization were handled, including bristle holder plate and solid
Several bristles being scheduled in carding fixed plate；Bristle includes the wedge-shaped bristle head of cylinder body and lower part；Wedge-shaped bristle head attachment
There are several abrasive grains；The length of cylinder body is L, diameter d；Draw ratio L/d < 40.
Further, to its seamed edge between two pyramids of the deep enough silicon wafer suede to be processed of wedge angle energy of wedge-shaped bristle head
Carry out round and smoothization processing.
Further, 70 ° of the wedge angle angle [alpha] < of wedge-shaped bristle head.
Further, bristle lengths are irregular, and length difference is 0.2-20 μm.
Further, the abrasive grains are diamond particles.
Further, the size of the abrasive grains is 0.1-200nm.
Further, lubricant is added when carrying out round and smoothization processing to silicon flannelette wedge angle and seamed edge in the wedge-shaped hairbrush.
In general,
Above-mentioned technical concept according to the invention compared with prior art, mainly has following advantages:
(1) the present invention is provided to what silicon flannelette wedge angle and seamed edge round and smoothization were handled to contain high grit wedge shape hairbrush, use
Bristle draw ratio L/d < 40, wedge-shaped bristle head length is irregular and tip angle is less than 70 ° of flannelette tower paddy angle, brushes simultaneously
Burr surface has the design of a large amount of abrasive grains, carries out round and smoothization processing using pyramid suede structure of the abrasive grains to silicon wafer,
It solves the problems, such as that subsequent thin film can not be completely covered, improves perovskite/crystal silicon lamination solar cell photoelectric conversion efficiency.
(2) contain high grit wedge shape hairbrush, behaviour provided by the present invention for what silicon flannelette wedge angle and seamed edge round and smoothization were handled
Make simply, it is easy to make, while significant effect, be conducive to the industrial metaplasia of high efficiency perovskite/crystal silicon lamination solar cell
It produces.
Detailed description of the invention
Fig. 1 is to contain high grit wedge shape hair brush structure schematic diagram for what silicon flannelette wedge angle and seamed edge round and smoothization were handled.
Fig. 2 is the wedge-shaped bristle head knot containing high grit wedge shape hairbrush handled for silicon flannelette wedge angle and seamed edge round and smoothization
Structure schematic diagram.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
As shown in Figs.1 and 2, it is handled provided by the present invention for silicon flannelette wedge angle and seamed edge round and smoothization hard containing height
Particle wedge shape hairbrush, comprising: bristle holder plate 1 and several bristles 2 being fixed in carding fixed plate 1.
Bristle 2 includes the wedge-shaped bristle head 22 of cylinder body 21 and lower part；The length of cylinder body 21 is L, diameter d；
Draw ratio L/d < 40, the state so that bristle 2 is kept upright.
22 70 ° of the wedge angle angle [alpha] < of wedge-shaped bristle head (adjacent two pyramid the lowest point angle on flannelette) of wedge-shaped hairbrush, so that
Wedge-shaped bristle head can carry out round and smoothization processing to its seamed edge between deep enough two pyramid.
2 length of bristle is irregular, and length difference is 0.2-20 μm.
As an example, there are a large amount of abrasive grains 23 on 22 surface of wedge-shaped bristle head of the wedge shape hairbrush.
As an example, the abrasive grains are arbitrarily can be to the particle that silicon is polished
As an example, the particle is diamond particles.
As an example, the size of the abrasive grains is 0.1-200nm.
As an example, lubrication can be added when carrying out round and smoothization processing to silicon flannelette wedge angle and seamed edge in the wedge shape hairbrush
Agent.
Below by application method, further illustrate contains hard of height for what silicon flannelette wedge angle and seamed edge round and smoothization were handled
The dynamic relationship of the wedge-shaped hairbrush of grain:
1) silicon wafer to be processed is got out；
2) lubricant is sprayed on or is evenly applied on wedge-shaped bristle 2；
3) wedge angle is carried out to silicon flannelette with certain speed with wedge-shaped hairbrush and seamed edge round and smoothization is handled；
4) silicon wafer completed to processing cleans.
As described above, of the invention contains high grit wedge shape hairbrush for what silicon flannelette wedge angle and seamed edge round and smoothization were handled,
It has the advantages that
1) device can pyramid suede structure to silicon wafer carry out round and smoothization processing, solve perovskite/crystal silicon lamination
The problem of subsequent thin film can not be completely covered in solar battery preparation process improves perovskite/crystal silicon lamination solar cell
Photoelectric conversion efficiency.
2) contain high grit wedge shape hairbrush, production provided by the present invention for what silicon flannelette wedge angle and seamed edge round and smoothization were handled
Simply, easy to operate, while significant effect, be conducive to that efficient perovskite/crystal silicon lamination solar cell is mass produced.
Above in conjunction with embodiment, the embodiments of the present invention are described in detail, but the present invention is not limited to above-mentioned realities
Apply mode, change, modification, substitution, combination or the simplification made under the Spirit Essence and principle of all technical solutions according to the present invention,
It should be equivalent substitute mode, as long as meeting goal of the invention of the invention, without departing from one kind in imitative pyramid textured surfaces
The uniformly wedge-shaped hairbrush of coating liquid film, belongs to protection scope of the present invention.
Claims (7)
1. containing high grit wedge shape hairbrush for what silicon flannelette wedge angle and seamed edge round and smoothization were handled, it is characterised in that: including bristle
Fixed plate and several bristles being fixed in carding fixed plate；Bristle includes the wedge-shaped bristle head of cylinder body and lower part；Wedge shape
Bristle head is attached with several abrasive grains；The length of cylinder body is L, diameter d；Draw ratio L/d < 40.
2. according to claim 1 contain high grit wedge shape hairbrush for what silicon flannelette wedge angle and seamed edge round and smoothization were handled,
It is characterized by: the wedge angle of wedge-shaped bristle head can justify its seamed edge between two pyramids of deep enough silicon wafer suede to be processed
Cunningization processing.
3. according to claim 1 contain high grit wedge shape hairbrush for what silicon flannelette wedge angle and seamed edge round and smoothization were handled,
It is characterized by: 70 ° of the wedge angle angle [alpha] < of wedge-shaped bristle head.
4. according to claim 1 contain high grit wedge shape hairbrush for what silicon flannelette wedge angle and seamed edge round and smoothization were handled,
It is characterized by: bristle lengths are irregular, length difference is 0.2-20 μm.
5. according to claim 1 contain high grit wedge shape hairbrush for what silicon flannelette wedge angle and seamed edge round and smoothization were handled,
It is characterized by: the abrasive grains are diamond particles.
6. according to claim 1 contain high grit wedge shape hairbrush for what silicon flannelette wedge angle and seamed edge round and smoothization were handled,
It is characterized by: the size of the abrasive grains is 0.1-200nm.
7. according to claim 1 contain high grit wedge shape hairbrush for what silicon flannelette wedge angle and seamed edge round and smoothization were handled,
It is characterized in that, lubricant is added when carrying out round and smoothization processing to silicon flannelette wedge angle and seamed edge in the wedge shape hairbrush.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811420179.0A CN109518282B (en) | 2018-11-26 | 2018-11-26 | Wedge-shaped hairbrush containing high-hardness particles and used for smoothing sharp corners and edges of silicon suede |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811420179.0A CN109518282B (en) | 2018-11-26 | 2018-11-26 | Wedge-shaped hairbrush containing high-hardness particles and used for smoothing sharp corners and edges of silicon suede |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109518282A true CN109518282A (en) | 2019-03-26 |
| CN109518282B CN109518282B (en) | 2020-08-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811420179.0A Active CN109518282B (en) | 2018-11-26 | 2018-11-26 | Wedge-shaped hairbrush containing high-hardness particles and used for smoothing sharp corners and edges of silicon suede |
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| Country | Link |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6464301B1 (en) * | 1998-10-14 | 2002-10-15 | M & C Schiffer Gmbh | Device and method for processing bristle filaments of brushes |
| US20080160886A1 (en) * | 2004-05-21 | 2008-07-03 | Epoxitech, Inc. | Abrasive Cleaning Device |
| CN203357184U (en) * | 2013-06-18 | 2013-12-25 | 南通综艺新材料有限公司 | Polycrystalline silicon C-corner hairbrush polishing machine |
-
2018
- 2018-11-26 CN CN201811420179.0A patent/CN109518282B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6464301B1 (en) * | 1998-10-14 | 2002-10-15 | M & C Schiffer Gmbh | Device and method for processing bristle filaments of brushes |
| US20080160886A1 (en) * | 2004-05-21 | 2008-07-03 | Epoxitech, Inc. | Abrasive Cleaning Device |
| CN203357184U (en) * | 2013-06-18 | 2013-12-25 | 南通综艺新材料有限公司 | Polycrystalline silicon C-corner hairbrush polishing machine |
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| Publication number | Publication date |
|---|---|
| CN109518282B (en) | 2020-08-18 |
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