CN109477219A - 单一氧化物金属沉积腔室 - Google Patents

单一氧化物金属沉积腔室 Download PDF

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Publication number
CN109477219A
CN109477219A CN201780045536.7A CN201780045536A CN109477219A CN 109477219 A CN109477219 A CN 109477219A CN 201780045536 A CN201780045536 A CN 201780045536A CN 109477219 A CN109477219 A CN 109477219A
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plates
gas distribution
chamber body
substrate support
substrate
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CN201780045536.7A
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CN109477219B (zh
Inventor
A·K·萨布莱曼尼
P·古帕拉加
T-J·龚
H·K·博尼坎帝
P·A·克劳斯
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
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    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C14/505—Substrate holders for rotation of the substrates
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation

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Abstract

本文所描述实现大体涉及处理腔室中的金属氧化物沉积。更特定地，本文所公开的实现涉及组合的化学气相沉积和物理气相沉积腔室。使用单一氧化物金属沉积腔室，能够执行CVD及PVD两者以有利地减小均匀半导体处理的成本。此外，所述单一氧化物金属沉积系统减小沉积半导体基板所必要的时间，且减小处理半导体基板所需要的占用面积。在一个实现中，所述处理腔室包含设置在腔室主体中的气体分配平板、设置在所述腔室主体中的一个或更多个金属靶以及设置在所述气体分配平板和一个或更多个靶下方的基板支撑件。

Description

单一氧化物金属沉积腔室
背景
技术领域
本文所描述的实现大体涉及处理腔室中的金属氧化物沉积。更具体地，本文所公开的实现涉及执行化学气相沉积及物理气相沉积两者的腔室。
背景技术
在集成电路制造中，使用沉积处理(例如化学气相沉积(CVD)或物理气相沉积(PVD))以在半导体基板上沉积多种材料的膜。这些沉积通常在分开的封闭处理腔室中进行。
使用处理气体以在CVD腔室中在基板上沉积膜。可将处理气体供应至被定位在基板支撑件上的基板。可提供净化气体以移除处理气体。可使用离开处理区域设置(例如，绕着处理腔室的外周长)的公用排气从处理腔室移除处理气体和净化气体以防止处理区域中净化气体与处理气体的混合。
PVD处理包含使用在等离子体区域中产生的离子溅射包括源材料的靶，造成喷出的源材料行进至靶。喷出的源材料可经由基板上形成的负电压或偏压加速朝向基板。一些PVD处理腔室向靶提供RF能量以增加均匀性。
两个处理腔室运用非常不同的处理条件以用于沉积。CVD处理以远高于PVD处理的温度操作且需要使用专门的前驱物。为了在基板上沉积多层的氧化物和金属，基板由一个腔室传输至下一个腔室，接着再次返回。使用上述布置，在从一个系统转换至下一个系统期间，可能在基板上沉积污染物及其他杂质，特别是当试着沉积交替的氧化物及金属层时，造成半导体膜中的非均匀性。
因此，具有针对用于在基板上沉积氧化物和金属的改良的系统和方法的需求。
发明内容
本文所描述的实现大体涉及处理腔室中的金属氧化物沉积。更具体地，本文所公开的实现涉及组合的化学气相沉积和物理气相沉积腔室。
在一个实现中，公开了一种沉积腔室。沉积腔室包含气体分配平板，气体分配平板设置于腔室主体中；一个或更多个金属靶，一个或更多个金属靶设置于腔室主体中；及基板支撑件，基板支撑件鉴于气体分配平板或鉴于一个或更多个靶选择性地设置。
在另一个实现中，沉积腔室包含气体分配平板，气体分配平板设置于腔室主体的中央部分中；多个靶，多个靶设置于腔室主体的周边部分中；可移动基板支撑件，可移动基板支撑件设置于气体分配平板下方；及一个或更多个准直器，一个或更多个准直器能够设置于基板支撑件和一个或更多个靶之间。
在另一个实现中，公开了一种沉积方法。沉积方法包含以下步骤：在可旋转基板支撑件上放置基板；将基板支撑件升高至与气体分配平板相邻，气体分配平板设置于腔室主体中；及使沉积前驱物流入第一处理容积。第一处理容积设置于气体分配平板与可旋转基板支撑件之间。该方法也包含以下步骤：将第一层沉积在基板上；鉴于一个或更多个靶将基板支撑件从第一处理容积降低至第二处理容积；旋转基板支撑件，同时从绕着气体分配平板沿圆周设置的一个或更多个靶溅射一种或更多种金属，且在第一层上沉积第二层。
附图说明
为了可以详细理解本公开的上述特征中的方式，可通过参考实现而具有本公开的更特定描述(简短总结如上)，其中一些在所附附图中示出。然而，应注意所附附图仅示出本公开的典型的实现，因此不被认为限制其范围，因为本公开可允许其他等效实现。
图1A是根据本公开的一个实现的化学处理期间具有处于升高位置的基板的处理腔室的截面视图。
图1B是根据本公开的一个实现的等离子体处理期间具有处于降低位置的基板的处理腔室的截面视图。
图2是根据本公开的一个实现的用于在处理腔室中沉积的方法的流程图。
为了便于理解，尽可能使用相同附图标记，以指示附图中共有的相同组件。构想到，在一个实现中公开的组件可有利地用于其他实现，而无须特定叙述。
具体实施方式
本文所描述的实现大体涉及处理腔室中的金属氧化物沉积。更具体地，本文所公开的实现涉及组合的化学气相沉积和物理气相沉积腔室。
图1A是根据本公开的一个实现的化学处理期间具有处于升高位置117的基板支撑件120的处理腔室100的截面视图。图1B是根据本公开的一个实现的物理沉积处理期间具有处于降低位置118的基板支撑件120的处理腔室100的截面视图。图1A和图1B的截面视图展示主要部件，如下方更详细地描述的。
处理腔室100包含基板支撑件120以支撑基板50、具有一个或更多个侧壁104的腔室主体102、底部106、盖108及一个或更多个周边腔室延伸部110。侧壁104、底部106、一个或更多个周边腔室延伸部110及盖108限定处理腔室100的内部容积112。在一个实现中，一个或更多个周边腔室延伸110包含与盖108相邻的第一有角度表面114、与第一有角度表面114相邻的第二有角度表面116及与第二有角度表面116及一个或更多个侧壁104两者相邻的第三有角度表面130。第一有角度表面114可包含用于溅射源(例如靶138)的开口以供插入。换句话说，靶138可在一个或更多个周边腔室延伸部110的第一有角度表面114中接合至腔室主体102。
处理腔室100包含基板支撑件120上方的气体分配平板124。在一个实现中，气体分配平板124可设置于腔室100的第一部分132中。在一个实现中，气体分配平板124设置于腔室100的中央部分中。第一部分132可由从盖108延伸的柱134限定。在一个实现中，柱134可从气体分配平板124延伸。第一部分132可位于腔室主体102中央。在一个实现中，柱134可以是圆形。然而，柱134可以是任何其他几何形状，例如正方形、六角形、椭圆形等。处于升高位置117(图1A)的基板支撑件120与气体分配平板124之间的区域由处理容积122来限定。气体分配平板124从处理气体源126供应处理气体至处理容积122。处理腔室100可以是等离子体腔室，例如包含等离子体源的腔室(例如，具有RF热气体分配平板的电容性耦合等离子体腔室)或连接至远程等离子体源(RPS)的腔室。
基板支撑件120可由陶瓷材料形成，例如氮化铝。基板支撑件120可包含静电夹具、陶瓷主体、加热器、真空夹具、基座或其组合。基板支撑件120具有基板支撑表面以在处理期间接收和支撑基板50。基板支撑件120耦合至支撑轴件121，支撑轴件121耦合至处理腔室100的底部106下方的升降机构115。可绕着支撑轴件121的处理腔室的底部106下方的部分来设置波纹管128，以将支撑轴件121与外部环境隔绝。升降机构115可由电源154供电。升降机构115被配置以在垂直方向上在升高位置117(见图1A)和降低位置118(见图1B)之间移动基板支撑件120。在一个实现中，基板支撑件120能够在垂直方向上移动且能够绕着轴150旋转。基板支撑件120可放置于升高位置117以用于通过化学气相沉积(CVD)对基板50进行处理，且可放置于降低位置118以用于通过物理气相沉积(PVD)对基板50进行处理。用于CVD处理的升高位置117中的压力可小于15托(Torr)，优选地为2至10托。用于PVD处理的降低位置118中的压力可小于2托，优选地为0.1毫托至1托。
可选地，支撑轴件121可耦合至密封平板136。密封平板136可有利地在基板50上的气体沉积期间密封第一部分132。第一部分132也可包含净化气体系统。净化气体系统可包含清洁源146，清洁源146在处理或清洁处理腔室100的第一部分132期间净化向处理腔室100供应净化气体。净化气体可以是氧气或惰性气体，例如氮或氩。净化气体帮助防止来自气体分配平板124的处理气体进入内部容积112的部分。此外，净化气体的流动可防止自由基对基板支撑件120的损坏。防止密封平板136下方的处理气体避免了不必要的清洁及污染。因此，使用净化气体减少了整体的清洁时间，增加腔室部件的使用寿命，且增加处理腔室100的生产量。
腔室100包含一个或更多个靶138及电源140。在一个实现中，电源140可以是射频(RF)电源。一个或更多个靶138可由接地传导性适配器经由介电隔绝器(未示出)来支撑。一个或更多个靶138包括当基板支撑件120处于降低位置118时(如图1B中所见)溅射期间将要在基板50表面上沉积的材料。一个或更多个靶138可设置于腔室100的周边部分中。
在降低位置118中，一个或更多个靶138可在第二处理容积148内溅射至基板50上。第二处理容积148设置于第一处理容积122下方在基板支撑件120和一个或更多个靶138之间。在一个实现中，第一靶138a可包括一种金属，而第二靶138b可包括不同金属，使得基板上的沉积提供这些金属的合金。在另一个实现中，第一靶138a和第二靶138b可包括相同材料。通过具有使用相同材料的多个靶来改良沉积率。一个或更多个靶138可包含铜以沉积种晶层(seed layer)，种晶层在基板50中形成具有高的长宽比特征。一个或更多个靶138可以是环状以进一步改良沉积率且消除对旋转台座的需求。
在一个实现中，将磁控管156放置在靶138上方。磁控管156可包含由底板支撑的多个磁铁，此底板连接至可轴向与靶138的中央轴对齐的轴件。磁铁产生腔室100内靠近靶138的前面的磁场以产生等离子体，使得显著的离子通量打击靶138而造成靶材料的溅射发射。磁铁可绕着靶138旋转以增加跨靶138表面的磁场的均匀性。
在一个实现中，腔室100包含在腔室主体102内接地的屏蔽物142。屏蔽物142包括选自铝、铜和不锈钢的材料。在一个实现中，屏蔽物的长(L)为直径(D)的两倍或处于2:1的L/D比率。在另一个实现中，屏蔽物的长为直径的三倍或处于3:1的L/D比率。屏蔽物142可有利地防止等离子体穿透并且溅射涂布柱134。此外，可从柱134以锐角设置屏蔽物142，以便当基板支撑件处于降低位置118时帮助引导溅射材料以角度方式朝向基板50。在一个实现中，当一个或更多个靶138溅射材料至基板50上时基板支撑件120绕着轴150旋转，以有利地在基板50上均匀地沉积材料。在一个实现中，可通过在一个或更多个靶138和基板支撑件120之间放置准直器152来实现方向性溅射。准直器152可机械地和电性地耦合至屏蔽物142及第三具角度表面130。在一个实现中，准直器152可在腔室100内电性地浮接。在一个实现中，准直器152耦合至电源。在一个实现中，准直器152为蜂巢结构，具有六角形壁以紧密封装布置分隔六角形孔隙。在一个实现中，准直器152包括选自铝、铜及不锈钢的材料。准直器152有利地用作滤波器以捕捉从一个或更多个靶138以超过所选择的角度的角度(接近正交于基板50)所发射的离子及中子。准直器152可包含RF线圈。
在一个实现中，从柱134以小于90度的锐角设置一个或更多个屏蔽物142。一个或更多个屏蔽物142和第三有角度的表面130部分限定腔室100的第二部分144。一个或更多个靶138设置于腔室100的第二部分144中。第二部分144相邻于第一部分132。在一个实现中，第二部分144设置于腔室100的周边中。一个或更多个屏蔽物142设置于一个或更多个靶138和气体分配平板124之间。在一个实现中，一个或更多个屏蔽物142部分地限定腔室100的周边部分且部分地限定腔室100的中央部分。可绕着气体分配平板124沿圆周设置腔室100的周边部分。
图2是根据本公开的一个实现的用于在处理腔室中沉积的方法200的流程图。在针对腔室100的金属氧化物沉积处理期间，在图2的操作210处，基板50被定位在可旋转基板支撑件120上。基板50可经由电夹具(未示出)电耦合至基板支撑件120。在操作220处，将基板支撑件120升高至与气体分配平板124相邻。气体分配平板124设置于腔室主体102中。更特定地，气体分配平板124设置于位于腔室100中央的第一部分132内。在操作230处，前驱物流体流入第一处理容积122。第一处理容积122设置于气体分配平板124和可旋转基板支撑件120之间。在第一处理容积122内沉积期间，基板支撑件可以是静止的。
前驱物流体可以是在基板50上沉积第一层的处理气体。在一个实现中，处理气体流动了5至25秒。在一个实现中，第一层为氧化物。在一个实现中，处理气体为含卤素气体，例如NF3。在一个实现中，气体分配平板124为喷淋头。一旦沉积完成，可排空与第一处理容积122相邻的区域及基板支撑件下方的区域。在一个实现中，可将净化气体供应至第一处理容积122。净化气体可以是氧或惰性气体，例如氮或氩。净化气体帮助防止来自气体分配平板124的处理气体进入内部容积112的部分。
在操作240处，将基板支撑件120在垂直方向上从第一处理容积122降低至第二处理容积148。第二处理容积148被设置在第一处理容积122下方。第二处理容积148被设置在基板支撑件120和一个或更多个靶138之间。在操作250处，基板支撑件可绕着轴150旋转，同时溅射一个或更多个靶138。绕着气体分配平板124沿圆周设置一个或更多个靶138。第二层沉积于第一层上。第二层可以是金属或金属合金。在一个实现中，一个靶138a可溅射一种金属，而另一靶138b溅射不同金属。在一个实现中，一个靶138a溅射与靶138b相同的金属。在一个实现中，一个或更多个靶138溅射相同的金属。在另一个实现中，一个或更多个靶138溅射不同的金属。
一旦溅射完成，可重复操作220至250。换句话说，基板支撑件120可升高进入腔室100的第一部分132以通过CVD处理来沉积氧化物，接着基板支撑件120可降低进入内部容积112以通过PVD处理来沉积金属。可重复氧化物层和金属层沉积约80至100次，使得在基板50上沉积80至100层交替的氧化物和金属。
本文公开的实现涉及单一氧化物金属沉积腔室，该单一氧化物金属沉积腔室能够执行CVD和PVD两者以减小均匀半导体处理的成本。此外，单一氧化物金属沉积系统减少在半导体基板上沉积所必要的时间。
尽管前述是本公开的实现，可修改本公开的其他及进一步的实现而不背离其基本范围，且此范围由随后的权利要求所决定。

Claims (15)

1.一种沉积腔室，包括：
气体分配平板，所述气体分配平板设置在腔室主体中；
一个或更多个金属靶，所述一个或更多个金属靶设置在所述腔室主体中；及
基板支撑件，所述基板支撑件设置在所述气体分配平板或所述一个或更多个金属靶下方。
2.如权利要求1所述的沉积腔室，进一步包括一个或更多个屏蔽物，所述一个或更多个屏蔽物设置在所述气体分配平板和所述一个或更多个金属靶之间。
3.如权利要求2所述的沉积腔室，其中所述气体分配平板设置在所述腔室主体的第一部分中，并且其中所述第一部分由从所述气体分配平板延伸的柱来限定。
4.如权利要求3所述的沉积腔室，其中所述一个或更多个屏蔽物设置为与所述柱相邻且与所述柱呈小于90度的锐角。
5.如权利要求1所述的沉积腔室，其中所述一个或更多个金属靶设置在所述腔室主体的第二部分中，并且其中所述腔室主体的所述第二部分环绕所述腔室主体的所述第一部分。
6.一种沉积腔室，包括：
气体分配平板，所述气体分配平板设置在腔室主体的中央部分中；
多个靶，所述多个靶设置在所述腔室主体的周边部分中；
可移动基板支撑件，所述可移动基板支撑件设置在所述气体分配平板下方；以及
一个或更多个屏蔽物，所述一个或更多个屏蔽物设置在所述气体分配平板和所述一个或更多个靶之间。
7.如权利要求6所述的沉积腔室，进一步包括柱，所述柱从所述气体分配平板延伸而部分地限定所述腔室主体的所述中央部分。
8.如权利要求6所述的沉积腔室，其中所述一个或更多个屏蔽物被设置为与所述柱呈小于90度的锐角，并且其中所述一个或更多个屏蔽物部分地限定所述腔室主体的所述中央部分和所述腔室主体的所述周边部分。
9.如权利要求6所述的沉积腔室，进一步包括第一处理容积，所述第一处理容积设置在所述气体分配平板和所述基板支撑件之间。
10.如权利要求9所述的沉积腔室，进一步包括多个处理容积，所述多个处理容积设置在所述基板支撑件和所述一个或更多个靶之间。
11.如权利要求6所述的沉积腔室，其中绕着所述气体分配平板沿圆周设置所述腔室主体的所述周边部分，并且其中所述基板支撑件能够在垂直方向上移动并且能够绕着轴旋转。
12.一种沉积方法，包括以下步骤：
a)在可旋转基板支撑件上放置基板；
b)将所述基板支撑件升高至与气体分配平板相邻，所述气体分配平板设置在腔室主体中；
c)使前驱物流体流入第一处理容积，其中所述第一处理容积设置在所述气体分配平板和所述可旋转基板支撑件之间并且在所述基板上沉积第一层；
d)将所述基板支撑件从所述第一处理容积降低至第二处理容积；以及
e)旋转所述基板支撑件，同时从绕着所述气体分配平板沿圆周设置的一个或更多个靶溅射一种或更多种金属并且在所述第一层上沉积第二层。
13.如权利要求12所述的方法，其中所述第一层是氧化物并且其中所述第二层是金属。
14.如权利要求12所述的方法，进一步包括排空所述第一处理容积。
15.如权利要求12所述的方法，进一步包括重复步骤b)至e)。
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