CN109473494A - 一种柔性cigs薄膜太阳能电池用背电极 - Google Patents
一种柔性cigs薄膜太阳能电池用背电极 Download PDFInfo
- Publication number
- CN109473494A CN109473494A CN201811611244.8A CN201811611244A CN109473494A CN 109473494 A CN109473494 A CN 109473494A CN 201811611244 A CN201811611244 A CN 201811611244A CN 109473494 A CN109473494 A CN 109473494A
- Authority
- CN
- China
- Prior art keywords
- film layer
- film
- flexible
- back electrode
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 14
- 239000010408 film Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 14
- 239000000956 alloy Substances 0.000 claims abstract description 14
- 229910018565 CuAl Inorganic materials 0.000 claims abstract description 4
- 229910002535 CuZn Inorganic materials 0.000 claims abstract description 4
- 229910015345 MOn Inorganic materials 0.000 claims abstract description 4
- 229910015621 MoO Inorganic materials 0.000 claims abstract description 4
- 229910010038 TiAl Inorganic materials 0.000 claims abstract description 4
- 229910010165 TiCu Inorganic materials 0.000 claims abstract description 4
- 229910010282 TiON Inorganic materials 0.000 claims abstract description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 4
- 229910052709 silver Inorganic materials 0.000 claims abstract description 4
- 229910052718 tin Inorganic materials 0.000 claims abstract description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000012528 membrane Substances 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920002480 polybenzimidazole Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明公开一种柔性CIGS薄膜太阳能电池用背电极,包括柔性基底,柔性基底顶面由下至上依次层叠有合金膜层、ZnAl膜层、降阻金属膜层、防腐蚀膜层与Mo膜层;所述合金膜层为CuAl、CuZn、TiAl或TiCu薄膜;所述降阻金属膜层为Ti、Al、Ag或Cu膜层;所述防腐蚀膜层为MoN、MoO、Al2O3、TiN或TiON膜层;该背电极具有质量轻、可弯曲、便于携带、后期高温硒化不变形、抗腐蚀、低电阻率、薄膜应力小等优点,且与基底附着强度高,能够避免基底中Na+向吸收层的扩散且与CIGS有良好的欧姆接触。
Description
技术领域
本发明涉及薄膜太阳能电池技术领域,具体是一种柔性CIGS薄膜太阳能电池用背电极。
背景技术
目前铜铟镓硒(CIGS)薄膜太阳能电池正迅速发展,但多数为玻璃基底,柔性CIGS薄膜太阳能电池刚刚开始,由于其质量轻,可折叠,可弯曲,便于携带,因此可以采用环绕式溅射沉积,有利于实现大规模生产,且显著的降低成本,可大量应用于便携式应急充电背包,光伏帐篷,光伏窗帘,光伏屋顶,太阳能汽车等具有广阔的应用空间,提高柔性CIGS薄膜太阳能电池效率及寿命有利于我国光伏产业的持续健康发展。
传统薄膜太阳能电池的背电极为Si3N4+Mo复合膜的结构,由于传统Mo背电极中Mo膜较厚,导致薄膜应力大,与基板附着强度较低,且Mo膜制备成本较高。
发明内容
本发明的目的在于提供一种柔性CIGS薄膜太阳能电池用背电极,该背电极具有质量轻、可弯曲、便于携带、后期高温硒化不变形、抗腐蚀、低电阻率、薄膜应力小等优点,且与基底附着强度高,能够避免基底中Na+向吸收层的扩散且与CIGS有良好的欧姆接触。
本发明解决其技术问题所采用的技术方案是:
一种柔性CIGS薄膜太阳能电池用背电极,包括柔性基底,柔性基底顶面由下至上依次层叠有合金膜层、ZnAl膜层、降阻金属膜层、防腐蚀膜层与Mo膜层;所述合金膜层为CuAl、CuZn、TiAl或TiCu薄膜;所述降阻金属膜层为Ti、Al、Ag或Cu膜层;所述防腐蚀膜层为MoN、MoO、Al2O3、TiN或TiON膜层;
所述合金膜层的厚度为60~120nm、ZnAl膜层的厚度为40~80nm、降阻金属膜层的厚度为20~40nm、防腐蚀膜层的厚度为15~60nm、Mo膜层的厚度为55~75nm。
进一步的,所述柔性基底采用聚合物基板或金属柔性基板。
本发明的有益效果是:
一、采用聚合物基板或金属柔性基板作为柔性基底,质量轻,可折叠,可弯曲,便于携带,因此可以采用环绕式溅射沉积,有利于实现大规模生产,且显著的降低成本。
二、背电极采用多层膜结构,合金膜层以及降阻膜层的加入可以有效提高背电极导电性能。
三、 ZnAl膜层使合金膜层至降阻膜层有较好的结合力,减小整体背电极的薄膜内应力。
四、降阻膜层可相对降低ZnAl膜层至防腐蚀膜层的电阻率,防腐蚀膜层能够防止后期硒化过程中硒对合金膜层的腐蚀。
五、Mo膜层使得硒与Mo反应适量并可控,并与作为吸收层的CIGS薄膜形成良好的欧姆接触,有益CIGS薄膜太阳能电池效率的提高。
六、背电极减少了阻挡层和Mo的层数,并降低了Mo的厚度,背电极整体厚度降低,成本降低。
附图说明
下面结合附图和实施例对本发明进一步说明:
图1是本发明的结构示意图。
具体实施方式
如图1所示,本发明提供一种柔性CIGS薄膜太阳能电池用背电极,包括柔性基底1,柔性基底1采用聚合物基板或金属柔性基板,聚合物基板可以是聚酰亚胺、聚苯并咪唑等,金属柔性基板可以是铁镍合金、钛箔、钼箔、铝箔、铜箔等;
柔性基底1顶面由下至上依次层叠有合金膜层2、ZnAl膜层3、降阻金属膜层4、防腐蚀膜层5与Mo膜层6;所述合金膜层2为CuAl、CuZn、TiAl或TiCu薄膜;所述降阻金属膜层4为Ti、Al、Ag或Cu膜层;所述防腐蚀膜层5为MoN、MoO、Al2O3、TiN或TiON膜层;
所述合金膜层2的厚度为60~120nm、ZnAl膜层3的厚度为40~80nm、降阻金属膜层4的厚度为20~40nm、防腐蚀膜层5的厚度为15~60nm、Mo膜层6的厚度为55~75nm。
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制;任何熟悉本领域的技术人员,在不脱离本发明技术方案范围情况下,都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰,或修改为等同变化的等效实施例。因此,凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所做的任何简单修改、等同替换、等效变化及修饰,均仍属于本发明技术方案保护的范围内。
Claims (2)
1.一种柔性CIGS薄膜太阳能电池用背电极,其特征在于,包括柔性基底,柔性基底顶面由下至上依次层叠有合金膜层、ZnAl膜层、降阻金属膜层、防腐蚀膜层与Mo膜层;所述合金膜层为CuAl、CuZn、TiAl或TiCu薄膜;所述降阻金属膜层为Ti、Al、Ag或Cu膜层;所述防腐蚀膜层为MoN、MoO、Al2O3、TiN或TiON膜层;
所述合金膜层的厚度为60~120nm、ZnAl膜层的厚度为40~80nm、降阻金属膜层的厚度为20~40nm、防腐蚀膜层的厚度为15~60nm、Mo膜层的厚度为55~75nm。
2.根据权利要求1所述的一种柔性CIGS薄膜太阳能电池用背电极,其特征在于,所述柔性基底采用聚合物基板或金属柔性基板。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811611244.8A CN109473494A (zh) | 2018-12-27 | 2018-12-27 | 一种柔性cigs薄膜太阳能电池用背电极 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811611244.8A CN109473494A (zh) | 2018-12-27 | 2018-12-27 | 一种柔性cigs薄膜太阳能电池用背电极 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN109473494A true CN109473494A (zh) | 2019-03-15 |
Family
ID=65678049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811611244.8A Pending CN109473494A (zh) | 2018-12-27 | 2018-12-27 | 一种柔性cigs薄膜太阳能电池用背电极 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN109473494A (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104124310A (zh) * | 2014-08-12 | 2014-10-29 | 北京四方继保自动化股份有限公司 | 一种柔性cigs薄膜太阳能电池阻挡层的制备方法 |
CN105164815A (zh) * | 2013-05-03 | 2015-12-16 | 法国圣戈班玻璃厂 | 用于光伏电池或模块的背接触式基板 |
CN107507878A (zh) * | 2017-09-06 | 2017-12-22 | 蚌埠玻璃工业设计研究院 | 一种薄膜太阳能电池用多层膜结构的光伏背板玻璃 |
CN209029391U (zh) * | 2018-12-27 | 2019-06-25 | 中建材蚌埠玻璃工业设计研究院有限公司 | 一种柔性薄膜太阳能电池用背电极 |
-
2018
- 2018-12-27 CN CN201811611244.8A patent/CN109473494A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105164815A (zh) * | 2013-05-03 | 2015-12-16 | 法国圣戈班玻璃厂 | 用于光伏电池或模块的背接触式基板 |
CN104124310A (zh) * | 2014-08-12 | 2014-10-29 | 北京四方继保自动化股份有限公司 | 一种柔性cigs薄膜太阳能电池阻挡层的制备方法 |
CN107507878A (zh) * | 2017-09-06 | 2017-12-22 | 蚌埠玻璃工业设计研究院 | 一种薄膜太阳能电池用多层膜结构的光伏背板玻璃 |
CN209029391U (zh) * | 2018-12-27 | 2019-06-25 | 中建材蚌埠玻璃工业设计研究院有限公司 | 一种柔性薄膜太阳能电池用背电极 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2009006910A3 (en) | Photovoltaic cell based on zinc oxide nanorods and method for making the same | |
US20150325731A1 (en) | Bi-component electrical connector | |
SE0400631D0 (sv) | Thin film solar cell and manufacturing method | |
CN105355676A (zh) | 一种柔性cigs薄膜太阳电池的背电极结构 | |
CN105206695A (zh) | 具有背保护层的柔性太阳能电池及其制备方法 | |
TW201445754A (zh) | 太陽能電池及其製造方法 | |
WO2012033033A1 (ja) | Cigs太陽電池用基板および電池 | |
CN106847941B (zh) | 一种碲化镉薄膜太阳能电池及其制备方法 | |
CN209029391U (zh) | 一种柔性薄膜太阳能电池用背电极 | |
CN104272470B (zh) | 太阳能电池及其制造方法 | |
CN209056508U (zh) | 一种柔性可弯曲cigs薄膜太阳能电池 | |
CN105322035A (zh) | 不锈钢箔太阳能电池及其制备方法 | |
CN101604708A (zh) | 复合透明导电基板 | |
CN109473494A (zh) | 一种柔性cigs薄膜太阳能电池用背电极 | |
CN209119123U (zh) | 一种异质结双面太阳电池 | |
CN110808299A (zh) | 一种柔性高吸收率的薄膜太阳能电池 | |
CN208674138U (zh) | 一种柔性cigs太阳能电池组件 | |
CN210607285U (zh) | 一种高吸收率的碲化镉薄膜太阳能电池 | |
CN109449228A (zh) | 一种柔性可弯曲cigs薄膜太阳能电池 | |
CN205069654U (zh) | 太阳能电池组件及其背板玻璃 | |
CN210607286U (zh) | 一种可弯曲高透光率的薄膜太阳能电池 | |
CN201252104Y (zh) | 复合透明导电基板 | |
CN105226118B (zh) | 柔性太阳能电池及其制备方法 | |
CN109713052A (zh) | 一种柔性薄膜太阳能电池用背电极的制备方法 | |
CN206460962U (zh) | 一种柔性碲化镉薄膜电池 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |