CN109470365A - A kind of device and calibration method for calibrating thermal microscope - Google Patents
A kind of device and calibration method for calibrating thermal microscope Download PDFInfo
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- CN109470365A CN109470365A CN201811313600.8A CN201811313600A CN109470365A CN 109470365 A CN109470365 A CN 109470365A CN 201811313600 A CN201811313600 A CN 201811313600A CN 109470365 A CN109470365 A CN 109470365A
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- thermal microscope
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- 238000000034 method Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000005259 measurement Methods 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims description 23
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 21
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 238000004971 IR microspectroscopy Methods 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 239000011159 matrix material Substances 0.000 description 20
- 230000005855 radiation Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000001931 thermography Methods 0.000 description 2
- 230000004304 visual acuity Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000009123 feedback regulation Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/80—Calibration
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Radiation Pyrometers (AREA)
Abstract
The present invention provides a kind of devices for calibrating thermal microscope, comprising: substrate, the temperature sensor for measuring the upper surface of substrate temperature and the target area for thermal microscope measurement temperature；The substrate is equipped with the temperature sensor and the target area, and the temperature sensor is connected with temperature measuring device, and the temperature sensor and the temperature measuring device complete the measurement to underlayer temperature jointly.Substrate temperature is obtained by temperature sensor and temperature measuring device, obtains normal temperature, using the temperature for the target area that thermal microscope measures, measurement temperature is obtained, by comparing normal temperature and measurement temperature, to calibrate thermal microscope.
Description
Technical field
The invention belongs to heat measurement technical field more particularly to a kind of device for calibrating thermal microscope and calibrations
Method.
Background technique
Thermal microscope is a kind of thermal infrared imager equipped with infrared microscopy optical imaging device, relative to routine
Thermal imaging system, thermal microscope can obtain the temperature distribution information of microcosmic surface, the highest resolving power that existing equipment is realized
Reach 3 μm.Since such equipment uses infrared temperature-test technology, belongs to non-contacting non-destructive testing, and spatial resolution is high, survey
Warm accuracy is good, is very suitable for the profiling temperatures for measuring micro-structure in semiconductor devices, is widely used in partly leading
The design of body device, Thermal characteristic analysis, craft screening, thermal resistance measurement, drop volume index is determining, aging condition is determining, failure analysis
Equal numerous areas.
Existing non-micro- thermal infrared imager is calibrated usually using cavate black matrix and face element formula black matrix, existing school
Standard apparatus is unable to satisfy the detection demand to the temperature accuracy of thermal microscope.
Summary of the invention
In view of this, the embodiment of the invention provides a kind of device and calibration method for calibrating thermal microscope, with
Solve the problems, such as that calibration device in the prior art can not carry out accurate alignment to thermal microscope.
The first aspect of the embodiment of the present invention provides a kind of device for calibrating thermal microscope, comprising:
Substrate, the temperature sensor for measuring the upper surface of substrate temperature and for the thermal microscope survey
The target area of amount temperature；
The substrate is equipped with the temperature sensor and the target area, and the temperature sensor and temperature measurement fill
Set connected, the temperature sensor and the temperature measuring device complete the measurement to underlayer temperature jointly.
In one embodiment, the target area does not contact with each other with the temperature sensor.
In one embodiment, the temperature sensor is arranged inside the target area.
In one embodiment, on substrate, the temperature sensor is equipped with the mesh for the temperature sensor setting
Mark region.
In one embodiment, including at least two temperature sensors, at least two temperature sensors are arranged
Around the target area, the temperature sensor does not contact with each other with the target area.
In one embodiment, the substrate be equipped with insulating layer, the insulating layer be equipped with the temperature sensor and
The target area.
In one embodiment, the substrate is silicon structure or GaAs material, and the insulating layer is silica or nitrogen
Silicon nitride material, the target area are gold, silicon or GaAs material.
In one embodiment, the temperature sensor is platinum resistance temperature sensor.
In one embodiment, the temperature measuring device is temperature measuring set or ohmer.
The second aspect of the embodiment of the present invention provides a kind of calibration method of thermal microscope, comprising:
The device of calibration thermal microscope as described above is placed on to the console of the thermal microscope
On；
The temperature of the console is adjusted to preset temperature；
The measured temperature that the temperature measuring device is obtained according to the temperature signal is read, and is denoted as standard temperature
Degree；
The temperature of the target area of the thermal microscope measurement is obtained, and is denoted as measurement temperature；
The normal temperature is compared with the measurement temperature, to calibrate the thermal microscope.
Existing beneficial effect is the embodiment of the present invention compared with prior art: the present invention passes through temperature sensor and temperature
Measuring device obtains substrate temperature, obtains normal temperature, using the temperature for the target area that thermal microscope measures, obtains
To measurement temperature, by comparing normal temperature and measurement temperature, to calibrate thermal microscope.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only of the invention some
Embodiment for those of ordinary skill in the art without any creative labor, can also be according to these
Attached drawing obtains other attached drawings.
Fig. 1 is the structural schematic diagram for the prior art cavate black matrix that one embodiment of the present of invention provides；
Fig. 2 is the structural schematic diagram for the prior art face element formula black matrix that one embodiment of the present of invention provides；
Fig. 3 is the structural schematic diagram one of the device for the calibration thermal microscope that one embodiment of the present of invention provides；
Fig. 4 is the structural schematic diagram two of the device for the calibration thermal microscope that one embodiment of the present of invention provides；
Fig. 5 is the structural schematic diagram three of the device for the calibration thermal microscope that one embodiment of the present of invention provides；
Fig. 6 is the structural schematic diagram four of the device for the calibration thermal microscope that one embodiment of the present of invention provides；
Fig. 7 is the structural schematic diagram five of the device for the calibration thermal microscope that one embodiment of the present of invention provides；
Fig. 8 is the structural schematic diagram six of the device for the calibration thermal microscope that one embodiment of the present of invention provides.
Wherein: 1, standard thermometer；2, target area；3, temperature-controlling system；4, substrate；5, temperature sensor；6, temperature is surveyed
Measure device；7, insulating layer.
Specific embodiment
In order to make those skilled in the art more fully understand this programme, below in conjunction with attached in this programme embodiment
Figure, is explicitly described the technical solution in this programme embodiment, it is clear that described embodiment is this programme a part
Embodiment, instead of all the embodiments.Based on the embodiment in this programme, those of ordinary skill in the art are not being made
The range of this programme protection all should belong in every other embodiment obtained under the premise of creative work.
The specification and claims of this programme and term " includes " and other any deformations in above-mentioned attached drawing are
Refer to " including but not limited to ", it is intended that cover and non-exclusive include.
As depicted in figs. 1 and 2, existing non-micro- thermal infrared imager usually using cavate black matrix and face element formula black matrix into
Row calibration.The main composition of cavate black matrix and face element formula black matrix can be summarized as target area 2, temperature-controlling system 3 and normal temperature
1 three parts are counted, wherein the target area 2 of cavate black matrix is a cavity, and face element formula black matrix target area 2 is coated with black matrix
The plane of coating, temperature-controlling system 3 control the temperature of cavate black matrix or face element formula black matrix, and standard thermometer 1 provides normal temperature value.
Temperature-controlling system 3 obtains the temperature information of target area 2 by being embedded in the standard thermometer 1 near target area 2, with
, as feedback regulation temperature, standard thermometer 1 arrives the distance on 2 surface of target area usually in millimeter to centimetres for this, even if
For the copper product of high thermal conductivity, such thickness bring temperature difference also easily reaches 0.1 DEG C or more, the influence to accuracy
It can not ignore.The temperature difference is influenced by the difference of 2 surface temperature of target area and environment temperature, while also by 2 surface of target area
Heat dispersal situations influence, thus are difficult to accurately correct.
Cavate black matrix and face element formula black matrix pursue high emissivity, usually 0.9 or more.But thermal microscope is come
It says, if other conditions are the same, performance is less than measurement high emissivity target when measuring low-launch-rate target, therefore only
The performance that can not reflect thermal imaging system comprehensively is calibrated to thermal microscope under the conditions of high emissivity.Especially half
Conductor device field is calibrated using 0.9 or more high emissivity target, and the semiconductor device surface material of actual measurement
It is mostly semiconductor and metal, typical semiconductor material Si, GaAs emissivity is about 0.4~0.6, typical metal material Au
Emissivity is about 0.2 or so, and calibration condition obviously disconnects with application conditions, and there are greater risks.
In addition, existing face element formula black matrix designs conventional non-micro- thermal infrared imager, the uniform performance of surface temperature
It is enough to meet conventional non-micro- thermal infrared imager calibration needs, but 3 μm of space is reached as high as in thermal microscope
Under resolving power, existing surface temperature source can not provide the uniformity met on the micron dimension space scale that calibration needs.
In order to illustrate technical solutions according to the invention, the following is a description of specific embodiments.
Fig. 3 shows a kind of device for calibrating thermal microscope provided by one embodiment of the invention, for the ease of
Illustrate, only parts related to embodiments of the present invention are shown, and details are as follows:
As shown in figure 3, a kind of device for calibrating thermal microscope provided by the embodiment of the present invention, comprising: substrate
4, for measuring the temperature sensor 5 of the 4 upper surface temperature of substrate and for thermal microscope measurement temperature
Target area 2.
The substrate 4 is equipped with the temperature sensor 5 and the target area 2, and the temperature sensor 5 is surveyed with temperature
It measures device 6 to be connected, the temperature sensor 5 exports collected temperature signal to the temperature measuring device 6, the temperature
Sensor 5 and the temperature measuring device 6 complete the measurement to the underlayer temperature jointly.
In embodiments of the present invention, by temperature sensor 5 and temperature measuring device 6 measure 4 upper surface temperature of substrate (
It is exactly the underlaying surface temperature of target area 2, the underlaying surface temperature of the target area 2 measured can be equal to the upper of target area 2
Surface temperature) it is used as normal temperature, use the temperature of 2 upper surface of target area of thermal microscope measurement temperature as measurement
Temperature, by comparing normal temperature and measurement temperature, to achieve the purpose that calibrate thermal microscope.
As shown in figure 3, in an embodiment of the invention, target area 2 does not contact with each other with temperature sensor 5.
In the present embodiment, temperature sensor 5 is directly produced on 4 surface of substrate using semiconductor technology, uses temperature sensing
Device 5 measure substrate 4 upper surface temperature, temperature sensor 5 at a distance from target area 2 in millimeter hereinafter, gained temperature more
Close to the true normal temperature in 2 surface of target area.The normal temperature of target area 2 and the mesh measured with thermal microscope
The measurement temperature in mark region 2 is compared, and whether accurate calibrates temperature measured by thermal microscope.
As shown in figure 4, in an embodiment of the invention, temperature sensor 5 is arranged inside target area 2.
In the present embodiment, the normal temperature of the direct measurement target region 2 of temperature sensor 5, and with infrared microscopy thermal imagery
The measurement temperature for the target area 2 that instrument measures is compared, and avoids the horizontal direction influence that temperature distribution is non-uniform.
In the present embodiment, 5 thickness of temperature sensor, will not be to the Temperature Distribution on 2 surface of target area in 100nm magnitude
Generate it is apparent influence, 2 thickness of target area is in micron dimension, therefore measured by 2 surface temperature of target area and temperature sensor 5
Temperature difference very little.
As shown in figure 5, in an embodiment of the invention, temperature sensor 5 is arranged on substrate 4, the temperature sensing
Device 5 is equipped with the target area 2.
In the present embodiment, temperature sensor 5 is produced on 2 lower surface of target area, temperature sensor 5 measures on substrate
Surface temperature, that is, the underlaying surface temperature of target area 2, since 5 thickness of temperature sensor is smaller, and with target area 2
Thermal contact resistance is small, thus the temperature that measures of temperature sensor 5 can accurately react the normal temperature of the upper surface of target area 2.
As shown in fig. 6, in an embodiment of the invention, including at least two temperature sensors 5, at least two institutes
It states temperature sensor 5 to be arranged around the target area 2, the temperature sensor 5 and the target area 2 not phase mutual connection
Touching.
In the present embodiment, it makes two or more temperature sensors 5 to be arranged around target area 2, use is multiple and different
The temperature data of position determines the surface standard temperature of target area 2 jointly, can with compensation temperature influence unevenly distributed, into
One step improves calibration accuracy.
As shown in fig. 7, in an embodiment of the invention, substrate 4 is equipped with insulating layer 7, the insulating layer 7 is equipped with institute
State temperature sensor 5 and the target area 2.
In an embodiment of the invention, substrate 4 is silicon structure or GaAs material, and the insulating layer 7 is silica
Or silicon nitride material, the target area 2 are gold, silicon or GaAs material.
In the present embodiment, target area 2 is made of semiconductor technology, and material selection is identical with practical devices surface
Material production, such as Au, Si, GaAs, the material of such target area 2 is identical as practical devices surfacing, can either provide
The target of different emissivity levels is used to calibrate, while also more close to the actual application scenarios of thermal microscope, thus
Make calibration that can more comprehensively reflect the performance of thermal microscope.On the other hand, target area 2 uses semiconductor technology
Production, can be realized the surface smoothness and roughness of nanometer level, to guarantee in thermal microscope resolution limit
(in air about 2~3 μm) remain to provide good temperature uniformity under level.
In an embodiment of the invention, temperature sensor 5 is platinum resistance temperature sensor 5.
In an embodiment of the invention, temperature measuring device 6 is temperature measuring set or ohmer.
In a particular application, the production process for calibrating the device of thermal microscope includes: to deposit absolutely on substrate 4Si
Edge layer 7, insulating layer 7 are SiO2, insulating layer 7 is with a thickness of 100nm；Make platinum resistance temperature sensor 5,100 Ω of resistance value, Pt material
Expect thickness 150nm；Production target area 2,1 μm of Au material thickness.
As shown in figure 8, in an embodiment of the invention, substrate 4 is equipped with insulating layer 7, insulating layer 7 is passed equipped with temperature
Sensor 5, the endless all standing substrate 4 of insulating layer 7 not by 7 covering part of insulating layer are target area 2 on substrate 4.
In a particular application, the production process for calibrating the device of thermal microscope includes: first on GaAs substrate 4
Deposit SiN insulating layer 7, SiN thickness 50nm；Then platinum resistance temperature sensor 5,100 Ω of resistance value, Pt material thickness are made
150nm；SiN insulating layer 7 is etched, exposes the GaAs material of substrate 4 as target area 2.
Due to temperature sensor 5 measure be substrate 4 upper surface temperature, that is, the lower surface temperature of target area 2
Degree, we are by the underlaying surface temperature of the target area 2 measured with temperature sensor 5, the equivalent upper surface temperature at target area 2
The temperature of degree, 2 lower surface of target area measured in order to better illustrate the present invention with temperature sensor 5 can be equivalent at target
The temperature of 2 upper surface of region illustrates below by verifying:
Below for the structure of the device of the calibration thermal microscope in embodiment, platinum resistance temperature sensor is estimated
The temperature difference of 5 upper and lower surfaces.
According to formula (1) calculating temperature difference
Wherein: Δ T is the temperature difference, and P is the heat radiation power of the unit square measure temperature difference, and k is material conducts heat rate, and L is that material is thick
Degree.It can be seen that the temperature difference is directly proportional to heat radiation power, and it is directly proportional to material thickness, it is inversely proportional with material conducts heat rate.
Heat dissipation includes cross-ventilation heat dissipation and heat loss through radiation two parts.Assuming that 300 DEG C of thermal station set temperature.For air
Heat loss through convection part, the heat radiation power of natural convection air are usually (5~25) W/ (Km2), for convenience of calculating, it is assumed that environment
Temperature is 0 DEG C, then the temperature difference is 300 DEG C, and corresponding unit area maximum heat radiation power is 7.5kW/m2 at this time.For heat radiation portion
Point, according to Si Tepan-Boltzmann formula
M=σ T4 (2)
Wherein: M is that black matrix all-wave length radiates out-degree, unit W/m2；σ=5.67032 × 10-8Wm-2K-4 is this
Te Pan-Boltzmann constant；T is temperature, unit K.It is possible thereby to calculate heat loss through radiation power of the black matrix at 300 DEG C and be
6.1kW/m2.It is to be appreciated that the radiation temperature of actual object should be on the basis of (2) formula multiplied by emissivity, that is to say, that practical
The heat loss through radiation power of object should be less than black matrix, and carrying out estimation using the heat radiation power of black matrix herein is conservative evaluation method.
According to estimation above, the total heat radiation power of unit area is 13.6kW/m2.The thermal conductivity of Pt is 72WK-1·m-1,
It with a thickness of 150nm, brings (1) formula into and is calculated, the temperature difference is 2.8 × 10 under this condition-5℃.As reference, according to tradition side
Case, it is assumed that platinum resistance is located at below target area at 5mm, using the Cu of high thermal conductivity as Heat Conduction Material, thermal conductivity 317W
K-1·m-1, identical radiating condition lower surface area and the platinum resistance position temperature difference are about 0.2 DEG C.It can be seen that this patent mentions
The accuracy in scheme surface temperature source out is by significantly improving.
It follows that the present invention can be under the conditions of different emissivity to the temperature accuracy parameter of thermal microscope
It is calibrated, more comprehensively reflects the technical performance for the thermal microscope being calibrated, when also more closing to reality is applied
The case where.2 uniformity of target area is much higher than, platinum resistance temperature sensing horizontal by the spatial resolution of school thermal microscope
Device 5 is with 2 distance of target area in millimeter hereinafter, being more nearly the true temperature of 2 upper surface of target area.
A kind of calibration method of thermal microscope provided by another embodiment of the present invention, comprising:
The device of calibration thermal microscope as described above is placed on to the console of the thermal microscope
On；
The temperature of the console is adjusted to preset temperature；
The measured temperature that the temperature measuring device is obtained according to the temperature signal is read, and is denoted as standard temperature
Degree；
The temperature of the target area of the thermal microscope measurement is obtained, and is denoted as measurement temperature；
The normal temperature is compared with the measurement temperature, to calibrate the infrared microscopy thermal imagery.
The above, the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although referring to before
Stating embodiment, invention is explained in detail, those skilled in the art should understand that: it still can be to preceding
Technical solution documented by each embodiment is stated to modify or equivalent replacement of some of the technical features；And these
It modifies or replaces, the spirit and scope for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution.
Claims (10)
1. a kind of device for calibrating thermal microscope characterized by comprising substrate, for measuring table on the substrate
The temperature sensor of face temperature and the target area that temperature is measured for the thermal microscope；
The substrate is equipped with the temperature sensor and the target area, the temperature sensor and temperature measuring device phase
Even, the temperature sensor and the temperature measuring device complete the measurement to underlayer temperature jointly.
2. as described in claim 1 calibration thermal microscope device, which is characterized in that the target area with it is described
Temperature sensor does not contact with each other.
3. the device of calibration thermal microscope as described in claim 1, which is characterized in that the temperature sensor setting
Inside the target area.
4. the device of calibration thermal microscope as described in claim 1, which is characterized in that the temperature sensor setting
On substrate, the temperature sensor is equipped with the target area.
5. the device of calibration thermal microscope as described in claim 1, which is characterized in that including at least two temperature
Sensor is spent, at least two temperature sensors are arranged around the target area, the temperature sensor and the mesh
Mark region does not contact with each other.
6. the device of calibration thermal microscope as described in claim 1, which is characterized in that the substrate is equipped with insulation
Layer, the insulating layer are equipped with the temperature sensor and the target area.
7. as claimed in claim 6 calibration thermal microscope device, which is characterized in that the substrate be silicon structure or
GaAs material, the insulating layer are silica or silicon nitride material, and the target area is gold, silicon or GaAs material.
8. the device of calibration thermal microscope as described in claim 1, which is characterized in that the temperature sensor is platinum
Resistance temperature sensor.
9. the device of calibration thermal microscope as described in claim 1, which is characterized in that the temperature measuring device is
Temperature measuring set or ohmer.
10. a kind of calibration method of thermal microscope characterized by comprising
The device of calibration thermal microscope as described in any one of claims 1-9 is placed on the infrared microscopy heat
As instrument console on；
The temperature of the console is adjusted to preset temperature；
The measured temperature that the temperature measuring device is obtained according to the temperature signal is read, and is denoted as normal temperature；
The temperature of the target area of the thermal microscope measurement is obtained, and is denoted as measurement temperature；
The normal temperature is compared with the measurement temperature, to calibrate the thermal microscope.
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| CN201811313600.8A CN109470365B (en) | 2018-11-06 | 2018-11-06 | Device and method for calibrating microscopic thermal infrared imager |
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| CN201811313600.8A CN109470365B (en) | 2018-11-06 | 2018-11-06 | Device and method for calibrating microscopic thermal infrared imager |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114114465A (en) * | 2021-11-24 | 2022-03-01 | 北京国网富达科技发展有限责任公司 | Power transmission line meteorological monitoring method and system |
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