CN109470365B - Device and method for calibrating microscopic thermal infrared imager - Google Patents
Device and method for calibrating microscopic thermal infrared imager Download PDFInfo
- Publication number
- CN109470365B CN109470365B CN201811313600.8A CN201811313600A CN109470365B CN 109470365 B CN109470365 B CN 109470365B CN 201811313600 A CN201811313600 A CN 201811313600A CN 109470365 B CN109470365 B CN 109470365B
- Authority
- CN
- China
- Prior art keywords
- temperature
- thermal infrared
- target area
- infrared imager
- temperature sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000005259 measurement Methods 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 25
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 21
- 238000009529 body temperature measurement Methods 0.000 claims description 11
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/80—Calibration
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Radiation Pyrometers (AREA)
Abstract
The invention provides a device for calibrating a microscopic thermal infrared imager, which comprises: the temperature sensor is used for measuring the temperature of the upper surface of the substrate, and the target area is used for the micro thermal infrared imager to measure the temperature; the temperature sensor and the target area are arranged on the substrate, the temperature sensor is connected with a temperature measuring device, and the temperature sensor and the temperature measuring device complete the measurement of the temperature of the substrate together. The temperature of the substrate is obtained through the temperature sensor and the temperature measuring device to obtain a standard temperature, the temperature of the target area is measured through the microscopic thermal infrared imager to obtain a measured temperature, and the microscopic thermal infrared imager is calibrated through comparing the standard temperature with the measured temperature.
Description
Technical Field
The invention belongs to the technical field of thermal metering, and particularly relates to a device and a method for calibrating a microscopic thermal infrared imager.
Background
Compared with a conventional thermal imager, the micro thermal infrared imager can acquire temperature distribution information of a micro surface, and the maximum resolution achieved by the conventional equipment reaches 3 microns. The equipment adopts an infrared temperature measurement technology, belongs to non-contact nondestructive testing, has high spatial resolution and good temperature measurement accuracy, is very suitable for measuring the temperature distribution condition of a micro structure in a semiconductor device, and is widely applied to various fields of design, thermal characteristic analysis, process screening, thermal resistance measurement, derating index determination, aging condition determination, failure analysis and the like of the semiconductor device.
The existing non-microscopic thermal infrared imager is usually calibrated by using a cavity type black body and a surface element type black body, and the existing calibrating device cannot meet the requirement for detecting the temperature accuracy of the microscopic thermal infrared imager.
Disclosure of Invention
In view of this, embodiments of the present invention provide a device and a method for calibrating a microscopic thermal infrared imager, so as to solve the problem that a calibration device in the prior art cannot accurately calibrate the microscopic thermal infrared imager.
A first aspect of an embodiment of the present invention provides a device for calibrating a microscopic thermal infrared imager, including:
the temperature sensor is used for measuring the temperature of the upper surface of the substrate, and the target area is used for the micro thermal infrared imager to measure the temperature;
the temperature sensor and the target area are arranged on the substrate, the temperature sensor is connected with a temperature measuring device, and the temperature sensor and the temperature measuring device complete the measurement of the temperature of the substrate together.
In one embodiment, the target area and the temperature sensor are not in contact with each other.
In one embodiment, the temperature sensor is disposed inside the target area.
In one embodiment, the temperature sensor is disposed on a substrate, the temperature sensor having the target area disposed thereon.
In one embodiment, at least two of the temperature sensors are included, the at least two temperature sensors being disposed about the target area, the temperature sensors and the target area not being in contact with each other.
In one embodiment, an insulating layer is disposed on the substrate, the insulating layer having the temperature sensor and the target area disposed thereon.
In one embodiment, the substrate is a silicon structure or a gallium arsenide material, the insulating layer is a silicon dioxide or silicon nitride material, and the target region is a gold, silicon or gallium arsenide material.
In one embodiment, the temperature sensor is a platinum resistance temperature sensor.
In one embodiment, the temperature measuring device is a temperature measuring instrument or a resistance meter.
The second aspect of the embodiment of the invention provides a calibration method for a microscopic thermal infrared imager, which comprises the following steps:
placing the device for calibrating the microscopic thermal infrared imager as described above on a console of the microscopic thermal infrared imager;
adjusting the temperature of the console to a preset temperature;
reading a temperature measurement value obtained by the temperature measurement device according to the temperature signal, and recording the temperature measurement value as a standard temperature;
acquiring the temperature of the target area measured by the microscopic thermal infrared imager, and recording the temperature as a measured temperature;
comparing the standard temperature with the measured temperature to calibrate the microinfrared thermal imager.
Compared with the prior art, the embodiment of the invention has the following beneficial effects: the temperature of the substrate is obtained through the temperature sensor and the temperature measuring device to obtain the standard temperature, the measured temperature is obtained through the temperature of the target area measured by the microscopic thermal infrared imager, and the microscopic thermal infrared imager is calibrated by comparing the standard temperature with the measured temperature.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a schematic diagram of a prior art cavity black body according to one embodiment of the present invention;
FIG. 2 is a schematic diagram of a prior art planar black body according to one embodiment of the present invention;
FIG. 3 is a first schematic structural diagram of a device for calibrating a microinfrared thermal imager according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram II of a device for calibrating a microinfrared thermal imager according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram III of a device for calibrating a microIR imager according to an embodiment of the present invention;
FIG. 6 is a fourth schematic structural view of a device for calibrating a microIR imager according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a fifth device for calibrating a microinfrared thermal imager according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram six of a device for calibrating a microinfrared thermal imager according to an embodiment of the present invention.
Wherein: 1. a standard thermometer; 2. a target area; 3. a temperature control system; 4. a substrate; 5. a temperature sensor; 6. a temperature measuring device; 7. an insulating layer.
Detailed Description
In order to make the technical solution better understood by those skilled in the art, the technical solution in the embodiment of the present invention will be clearly described below with reference to the drawings in the embodiment of the present invention, and it is obvious that the described embodiment is a part of the embodiment of the present invention, and not a whole embodiment. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present disclosure without any creative effort shall fall within the protection scope of the present disclosure.
The terms "include" and any other variations in the description and claims of this document and the above-described figures, mean "including but not limited to", and are intended to cover non-exclusive inclusions.
As shown in fig. 1 and 2, existing non-microscopic thermal infrared imagers are typically calibrated using cavity and bin black bodies. The main components of the cavity type black body and the surface element type black body can be summarized into a target area 2, a temperature control system 3 and a standard thermometer 1, wherein the target area 2 of the cavity type black body is a cavity, the surface element type black body target area 2 is a plane coated with black body coating, the temperature control system 3 controls the temperature of the cavity type black body or the surface element type black body, and the standard thermometer 1 provides a standard temperature value.
The temperature control system 3 acquires the temperature information of the target area 2 through the standard thermometer 1 buried near the target area 2, and the temperature information is used as feedback to adjust the temperature, the distance from the standard thermometer 1 to the surface of the target area 2 is usually in the millimeter to centimeter magnitude, even for copper materials with high thermal conductivity, the temperature difference caused by the thickness can easily reach more than 0.1 ℃, and the influence on the accuracy is not negligible. This temperature difference is affected by the difference between the surface temperature of the target area 2 and the ambient temperature, and also by the heat dissipation from the surface of the target area 2, and thus is difficult to correct accurately.
Cavity and surface element black bodies seek high emissivity, typically above 0.9. However, for the micro thermal infrared imager, under the same other conditions, the performance of measuring a low-emissivity target is inferior to that of measuring a high-emissivity target, so that the performance of the thermal infrared imager cannot be fully reflected only by calibrating the micro thermal infrared imager under the high-emissivity condition. Particularly in the field of semiconductor devices, a high-emissivity target with the emissivity of more than 0.9 is used for calibration, the surface materials of the semiconductor devices which are actually measured are mostly semiconductors and metals, the emissivity of typical semiconductor materials Si and GaAs is about 0.4-0.6, the emissivity of typical metal materials Au is about 0.2, calibration conditions and application conditions are obviously disjointed, and great risks exist.
In addition, the surface temperature uniformity of the conventional bin-type black body designed for the conventional non-microscopic thermal infrared imager can meet the calibration requirement of the conventional non-microscopic thermal infrared imager, but the conventional surface temperature source cannot provide the uniformity on the micrometer-scale space scale meeting the calibration requirement under the spatial resolution of the microscopic thermal infrared imager up to 3 μm.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Fig. 3 shows a device for calibrating a microinfrared thermal imager according to an embodiment of the present invention, and for convenience of illustration, only the portions related to the embodiment of the present invention are shown, which are detailed as follows:
as shown in fig. 3, a device for calibrating a microscopic thermal infrared imager according to an embodiment of the present invention includes: the device comprises a substrate 4, a temperature sensor 5 for measuring the temperature of the upper surface of the substrate 4 and a target area 2 for measuring the temperature of the micro thermal infrared imager.
The substrate 4 is provided with the temperature sensor 5 and the target area 2, the temperature sensor 5 is connected with the temperature measuring device 6, the temperature sensor 5 outputs the collected temperature signal to the temperature measuring device 6, and the temperature sensor 5 and the temperature measuring device 6 complete the measurement of the substrate temperature together.
In the embodiment of the present invention, the temperature of the upper surface of the substrate 4 (i.e., the temperature of the lower surface of the target region 2, and the measured temperature of the lower surface of the target region 2 may be equal to the temperature of the upper surface of the target region 2) is measured by the temperature sensor 5 and the temperature measuring device 6 as a standard temperature, the temperature of the upper surface of the target region 2 measured by the microscopic thermal infrared imager is used as a measured temperature, and the purpose of calibrating the microscopic thermal infrared imager is achieved by comparing the standard temperature and the measured temperature.
As shown in fig. 3, in one embodiment of the present invention, the target area 2 and the temperature sensor 5 are not in contact with each other.
In the embodiment, the temperature sensor 5 is directly manufactured on the surface of the substrate 4 by adopting a semiconductor process, the temperature of the upper surface of the substrate 4 is measured by the temperature sensor 5, the distance between the temperature sensor 5 and the target area 2 is less than millimeter, and the obtained temperature is closer to the real standard temperature of the surface of the target area 2. And comparing the standard temperature of the target area 2 with the measured temperature of the target area 2 measured by the microscopic thermal infrared imager, and calibrating whether the measured temperature of the microscopic thermal infrared imager is accurate.
As shown in fig. 4, in one embodiment of the present invention, the temperature sensor 5 is disposed inside the target area 2.
In the present embodiment, the temperature sensor 5 directly measures the standard temperature of the target area 2, and compares the measured temperature of the target area 2 with the measured temperature of the target area 2 measured by the thermal infrared microscope imager, thereby avoiding the influence of uneven temperature distribution in the horizontal direction.
In the present embodiment, the thickness of the temperature sensor 5 is on the order of 100nm, which does not significantly affect the temperature distribution on the surface of the target area 2, and the thickness of the target area 2 is on the order of micrometers, so that the difference between the temperature on the surface of the target area 2 and the temperature measured by the temperature sensor 5 is small.
As shown in fig. 5, in one embodiment of the present invention, a temperature sensor 5 is disposed on a substrate 4, and the target area 2 is disposed on the temperature sensor 5.
In the present embodiment, the temperature sensor 5 is fabricated on the lower surface of the target region 2, and the temperature sensor 5 measures the temperature of the upper surface of the substrate, that is, the temperature of the lower surface of the target region 2, and since the thickness of the temperature sensor 5 is small and the thermal contact resistance with the target region 2 is small, the temperature measured by the temperature sensor 5 can accurately reflect the standard temperature of the upper surface of the target region 2.
As shown in fig. 6, in one embodiment of the present invention, at least two temperature sensors 5 are included, at least two temperature sensors 5 are disposed around the target area 2, and the temperature sensors 5 and the target area 2 are not in contact with each other.
In the embodiment, two or more temperature sensors 5 are manufactured and arranged around the target area 2, and the surface standard temperature of the target area 2 is determined by using the temperature data of a plurality of different positions, so that the influence of non-uniform temperature distribution can be compensated, and the calibration accuracy is further improved.
As shown in fig. 7, in an embodiment of the present invention, an insulating layer 7 is disposed on the substrate 4, and the temperature sensor 5 and the target area 2 are disposed on the insulating layer 7.
In one embodiment of the present invention, the substrate 4 is a silicon structure or a gallium arsenide material, the insulating layer 7 is a silicon dioxide or silicon nitride material, and the target region 2 is a gold, silicon or gallium arsenide material.
In the embodiment, the target region 2 is manufactured by adopting a semiconductor process, and the material is made of the same material as the surface of an actual device, such as Au, Si, GaAs and the like, so that the material of the target region 2 is the same as the surface material of the actual device, and not only can provide targets with different emissivity levels for calibration, but also can be closer to the actual application scene of the microscopic thermal infrared imager, so that the performance of the microscopic thermal infrared imager can be more comprehensively reflected by the calibration. On the other hand, the target area 2 is manufactured by adopting a semiconductor process, and the surface flatness and roughness at the nano level can be realized, so that the good temperature uniformity can be still provided under the resolution limit level of the microscopic thermal infrared imager (about 2-3 μm in the air).
In one embodiment of the invention, the temperature sensor 5 is a platinum resistance temperature sensor 5.
In one embodiment of the invention, the temperature measuring device 6 is a temperature measuring instrument or a resistance meter.
In a specific application, the manufacturing process of calibrating the device of the microscopic thermal infrared imager comprises the following steps: depositing an insulating layer 7 on the substrate 4Si, the insulating layer 7 being SiO2The thickness of the insulating layer 7 is 100 nm; manufacturing a platinum resistor temperature sensor 5, wherein the resistance value is 100 omega, and the thickness of a Pt material is 150 nm; the target area 2 is made, and the thickness of the Au material is 1 μm.
As shown in fig. 8, in one embodiment of the present invention, an insulating layer 7 is provided on the substrate 4, the temperature sensor 5 is provided on the insulating layer 7, the insulating layer 7 does not completely cover the substrate 4, and the portion of the substrate 4 not covered by the insulating layer 7 is the target region 2.
In a specific application, the manufacturing process of calibrating the device of the microscopic thermal infrared imager comprises the following steps: firstly, a SiN insulating layer 7 is deposited on a GaAs substrate 4, wherein the thickness of the SiN is 50 nm; then manufacturing a platinum resistance temperature sensor 5, wherein the resistance value is 100 omega, and the thickness of the Pt material is 150 nm; the SiN insulating layer 7 is etched to expose the GaAs material of the substrate 4 as the target region 2.
Since the temperature sensor 5 measures the temperature of the upper surface of the substrate 4, i.e. the temperature of the lower surface of the target area 2, we will equate the temperature of the lower surface of the target area 2 measured by the temperature sensor 5 to the temperature of the upper surface of the target area 2, and for better illustration the temperature of the lower surface of the target area 2 measured by the temperature sensor 5 of the present invention can equate the temperature of the upper surface of the target area 2, as will be explained by verification below:
next, with respect to the structure of the device for calibrating a microscopic thermal infrared imager in the embodiment, the temperature difference between the upper and lower surfaces of the platinum resistance temperature sensor 5 is estimated.
Calculating the temperature difference according to equation (1)
Wherein: delta T is the temperature difference, P is the heat dissipation power per unit area per unit temperature difference, k is the material thermal conductivity, and L is the material thickness. It can be seen that the temperature difference is proportional to the heat dissipation power, proportional to the material thickness, and inversely proportional to the material thermal conductivity.
The heat dissipation comprises two parts of air convection heat dissipation and radiation heat dissipation. Assume that the thermal block set temperature is 300 deg.C. For the air convection heat dissipation part, the heat dissipation power of natural convection of air is usually (5-25) W/(K · m2), for the convenience of calculation, assuming that the ambient temperature is 0 ℃, the temperature difference is 300 ℃, and the corresponding maximum heat dissipation power per unit area is 7.5kW/m2 at this time. For the heat-radiating part, according to the Stepan-Boltzmann equation
M＝σT4 (2)
Wherein: m is the full wavelength radiation emittance of the blackbody and the unit is W/M2(ii) a σ -5.67032 × 10-8W · m-2 · K-4 is the spipan-boltzmann constant; t is temperature in K. Therefore, the radiation heat dissipation power of the black body at 300 ℃ can be calculated to be 6.1kW/m2. It should be noted that the radiation temperature of the actual object should be multiplied by the emissivity based on the formula (2), that is, the radiation heat dissipation power of the actual object should be smaller than that of the black body, and here, the estimation using the heat dissipation power of the black body is a conservative estimation method.
According to the above estimation, the total heat dissipation power per unit area is 13.6kW/m2. The thermal conductivity of Pt is 72 W.K-1·m-1The thickness is 150nm, and the temperature difference is 2.8 multiplied by 10 under the condition that the calculation is carried out by the formula (1)-5DEG C. For reference, if the conventional scheme is adopted, assuming that the platinum resistor is located 5mm below the target area, high thermal conductivity Cu is adopted as the thermal conductivity material, and the thermal conductivity is 317 W.K-1·m-1Under the same heat dissipation condition, the temperature difference between the surface area and the position of the platinum resistor is about 0.2 ℃. It can be seen that the accuracy of the solution proposed by this patent to the surface temperature source is significantly improved.
Therefore, the temperature accuracy parameters of the thermal infrared microscopic imager can be calibrated under different emissivity conditions, the technical performance of the calibrated thermal infrared microscopic imager is reflected more comprehensively, and the situation of the thermal infrared microscopic imager in practical application is also closer to. The uniformity of the target area 2 is far higher than the spatial resolution level of the calibrated microscopic thermal infrared imager, and the distance between the platinum resistance temperature sensor 5 and the target area 2 is less than millimeters and is closer to the real temperature of the upper surface of the target area 2.
Another embodiment of the present invention provides a calibration method for a microscopic thermal infrared imager, including:
placing the device for calibrating the microscopic thermal infrared imager as described above on a console of the microscopic thermal infrared imager;
adjusting the temperature of the console to a preset temperature;
reading a temperature measurement value obtained by the temperature measurement device according to the temperature signal, and recording the temperature measurement value as a standard temperature;
acquiring the temperature of the target area measured by the microscopic thermal infrared imager, and recording the temperature as a measured temperature;
comparing the standard temperature with the measured temperature to calibrate the microscopic infrared thermal image.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A device for calibrating a microscopic thermal infrared imager, comprising: the temperature sensor is used for measuring the temperature of the upper surface of the substrate, and the target area is used for the micro thermal infrared imager to measure the temperature;
the temperature sensor and the target area are arranged on the substrate, the temperature sensor is connected with a temperature measuring device, and the temperature sensor and the temperature measuring device jointly complete the measurement of the temperature of the substrate; the target area and the temperature sensor are both manufactured by adopting a semiconductor process;
the target area is made of gold, silicon or gallium arsenide material;
and comparing the temperature of the upper surface of the substrate measured by the temperature sensor and the temperature measuring device with the temperature of the target area measured by the thermal infrared microscope imager so as to calibrate the thermal infrared microscope imager.
2. The device for calibrating a microscopic thermal infrared imager of claim 1, wherein the target area and the temperature sensor are not in contact with each other.
3. The device for calibrating microthermography according to claim 1, wherein said temperature sensor is disposed inside said target area.
4. The device for calibrating a microscopic thermal infrared imager of claim 1, wherein the temperature sensor is disposed on a substrate, the temperature sensor having the target area disposed thereon.
5. The device for calibrating microthermographs according to claim 1, comprising at least two of said temperature sensors, said at least two temperature sensors being disposed around said target area, said temperature sensors not being in contact with said target area.
6. A device for calibrating a microscopic thermal infrared imager as claimed in claim 1, wherein an insulating layer is provided on said substrate, said insulating layer being provided with said temperature sensor and said target area.
7. The device for calibrating a microscopic thermal infrared imager of claim 6, wherein the substrate is a silicon structure or a gallium arsenide material and the insulating layer is a silicon dioxide or silicon nitride material.
8. The device for calibrating a microscopic thermal infrared imager of claim 1, wherein the temperature sensor is a platinum resistance temperature sensor.
9. Device for calibrating a microscopic thermal infrared imager as claimed in claim 1, characterized in that the temperature measuring means are a temperature measuring instrument or a resistance meter.
10. A calibration method of a microscopic thermal infrared imager is characterized by comprising the following steps:
placing a device for calibrating a microscopic thermal infrared imager according to any one of claims 1-9 on a console of the microscopic thermal infrared imager;
adjusting the temperature of the console to a preset temperature;
reading a temperature measurement value obtained by the temperature measurement device according to the temperature signal, and recording the temperature measurement value as a standard temperature;
acquiring the temperature of the target area measured by the microscopic thermal infrared imager, and recording the temperature as a measured temperature;
comparing the standard temperature with the measured temperature to calibrate the microinfrared thermal imager.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811313600.8A CN109470365B (en) | 2018-11-06 | 2018-11-06 | Device and method for calibrating microscopic thermal infrared imager |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811313600.8A CN109470365B (en) | 2018-11-06 | 2018-11-06 | Device and method for calibrating microscopic thermal infrared imager |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109470365A CN109470365A (en) | 2019-03-15 |
| CN109470365B true CN109470365B (en) | 2021-03-23 |
Family
ID=65672306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811313600.8A Active CN109470365B (en) | 2018-11-06 | 2018-11-06 | Device and method for calibrating microscopic thermal infrared imager |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109470365B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114114465A (en) * | 2021-11-24 | 2022-03-01 | 北京国网富达科技发展有限责任公司 | Power transmission line meteorological monitoring method and system |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE202012101675U1 (en) * | 2011-07-15 | 2012-06-12 | Von Ardenne Anlagentechnik Gmbh | Arrangement for measuring the temperature of substrates in a vacuum treatment plant |
| CN103076101B (en) * | 2012-12-28 | 2014-12-31 | 无锡艾立德智能科技有限公司 | Method for calibrating thermal infrared imager pixel point |
| CN105716723B (en) * | 2016-04-05 | 2018-08-07 | 中国计量学院 | Improve the apparatus and method of industry spot thermal imaging system temperature measurement accuracy |
| CN107817054B (en) * | 2017-10-24 | 2020-04-21 | 中国科学院武汉物理与数学研究所 | Temperature measurement method of infrared imager for parts in vacuum cavity |
| CN108364883A (en) * | 2018-02-28 | 2018-08-03 | 中国电子科技集团公司第十三研究所 | Verify device, preparation method and the verification method of heat reflection temperature measuring equipment accuracy |
-
2018
- 2018-11-06 CN CN201811313600.8A patent/CN109470365B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109470365A (en) | 2019-03-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA2788506C (en) | Turbine component instrumented to provide thermal measurements | |
| KR102059716B1 (en) | Method and system for measuring heat flux | |
| US4456919A (en) | Thermopile type detector with temperature sensor for cold junction | |
| US5260668A (en) | Semiconductor surface resistivity probe with semiconductor temperature control | |
| US9933311B2 (en) | Blackbody function | |
| US20160334284A1 (en) | System and method for calibrating and characterising instruments for temperature measurement by telemetry | |
| US4840495A (en) | Method and apparatus for measuring the thermal resistance of an element such as large scale integrated circuit assemblies | |
| US6354736B1 (en) | Wide temperature range RTD | |
| JP5253222B2 (en) | Temperature measuring element and temperature measuring instrument | |
| CN109470365B (en) | Device and method for calibrating microscopic thermal infrared imager | |
| US10816401B2 (en) | Hyperspectral thermoreflectance imaging | |
| Tessier et al. | Thermoreflectance temperature imaging of integrated circuits: calibration technique and quantitative comparison with integrated sensors and simulations | |
| US10809136B2 (en) | Thin film sensor element for a resistance thermometer | |
| CN107037076B (en) | Measuring chip and method for determining the thermal conductivity of a thin layer | |
| CN113551778A (en) | Thermal imager relative temperature measurement performance evaluation device | |
| US8727609B2 (en) | Method for the thermal characterization of a portion of material | |
| US10352781B2 (en) | Micro heater integrated with thermal sensing assembly | |
| US12085456B2 (en) | Assessing the measurement quality of the sensor element for measuring an object temperature | |
| US20230296445A1 (en) | Stacked Active Thick Film Device | |
| US20230375418A1 (en) | Thermopile laser sensor with response time acceleration and methods of use and manufacture | |
| JP7558027B2 (en) | Thin-film thermocouple element, temperature measuring element, and method for manufacturing thin-film thermocouple element | |
| Kubota et al. | Control of Heat Capacity of Moisture Sensor by Galvanic Arrays with Micro/Nano Gap | |
| US6099744A (en) | Test sample fabrication technique | |
| Oikawa et al. | A compact high-emissivity variable-temperature blackbody furnace with carbon-nanotube coated bottom | |
| Kiss et al. | Error sources during the measurement of surface temperatures and heat flux on the aluminium electrolysis cells |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |