CN1094524C - Process for growing piezoelectric film of aluminium nitride on substrate of high-sound-velocity material - Google Patents
Process for growing piezoelectric film of aluminium nitride on substrate of high-sound-velocity material Download PDFInfo
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- CN1094524C CN1094524C CN99125749A CN99125749A CN1094524C CN 1094524 C CN1094524 C CN 1094524C CN 99125749 A CN99125749 A CN 99125749A CN 99125749 A CN99125749 A CN 99125749A CN 1094524 C CN1094524 C CN 1094524C
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Abstract
The present invention relates to a growing method for a c-orientation aluminium nitride (AIN) film on a substrate of a high sound speed material (such as diamond, an amorphous diamond film and a diamond-like carbon film). In order to improve the work efficiency of a surface acoustic wave (SAW) device, the present invention provides an efficient method that the substrate of the high sound speed material is deposited with a piezoelectric film. The method solves the problem that the substrate of the high sound speed material (such as the diamond, the amorphous diamond film and the diamond-like carbon film) is difficult to form the C-orientation aluminium nitride (AIN) piezoelectric film. The aluminium nitride piezoelectric film prepared by using the method is used for manufacturing the surface acoustic wave (SAW) device of which the work frequency can reach more than 3 gigahertz (GHz).
Description
The present invention relates to a kind of method of c-axle orientation aluminium nitride (AlN) piezoelectric membrane of on the high-sound-velocity material substrate, growing, belong to the piezoelectric film material field.
Construction of information expressway has the important strategic meaning to the development of Chinese national economy.As the important component part of information industry, mobile communication is because its convenient and swift welcome that extensively is subjected to the user is also becoming one of most active industry.The carrier of mobile communication is a high frequency radio wave, up to the present, in the wavelength band of hundreds of megahertz, free repercussions section is arranged seldom, further develops the wave band that mobile communication must be used mega hertz (GHz) or higher frequency.
Surface acoustic wave SAW (Surface acoustic wave) device is one of key part of modern mobile radio system, and moreover, it all has important application at aspects such as radar, electronic countermeasure, aerospace and navigation.Along with mobile communication develops (more than 3 mega hertzs) to the direction of higher frequency, new requirement has been proposed also for the operating frequency of surface acoustic wave device.
The operating frequency of surface acoustic wave (SAW) device is mainly by two aspect factor decisions: the one, and the live width/gap ratio of interdigital electrode (IDT), the wavelength of its decision surface acoustic wave; Be the velocity of propagation of surface acoustic wave on the other hand, it is by the characteristic decision of material itself.Therefore, improve the operating frequency of surface acoustic wave (SAW) device, the one, reduce the live width/gap ratio of interdigital electrode, but it is subjected to the existing processes horizontal constraints; Be exactly the velocity of propagation that improves surface acoustic wave in addition, promptly use high-sound-velocity material.
Surface acoustic wave (SAW) device mostly adopts Lithium niobium trioxide (LiNbO at present
3) or lithium tantalate (LiTaO
3) etc. mono-crystalline piezoelectric materials or PZT series piezoceramic material make.Yet because the surface-duided wave speed ratio lower (2000～4000 meter per second) of this class material under the existing processes condition, make operating frequency reach mega hertz or higher, the simple live width that reduces interdigital electrode (IDT) live width/gap ratio that relies on is quite difficult.And under the deep-submicron situation, the migration of aluminum alloy anode will be very serious.Therefore, mainly be that some piezoquartz is carried out theoretical calculation at present, seek the propagation direction of high velocity of sound leaky wave; Then be by the improvement material system in addition, select the fast material of surperficial acoustic wave propagation velocity to make high-frequency surface acoustic wave (SAW) device, obviously the latter is more direct valid approach.
Diamond substrate (comprising amorphous diamond and diamond like carbon film) has very high acoustic wave propagation velocity [velocity of longitudinal wave: diamond～17000 meter per seconds, carborundum SiC (6H)～14000 meter per second]. therefore, under existing processing condition, with this class material as the substrate piezoelectric membrane of growing, make surface acoustic wave (SAW) device and may increase substantially the device operating frequency, thereby paid much attention to.Existing at present live width/spacing/zinc oxide (ZnO)/live width/spacing/diamond making operating frequency of utilizing is the report of 2.9 mega hertz surface acoustic wave (SAW) wave filters, but still is in the laboratory study stage.Certainly, make surface acoustic wave (SAW) device, then utilize existing photoetching process just can make surface acoustic wave (SAW) wave filter of gigahertz frequencies if adopt the higher piezoelectric of this class velocity of sound of aluminium nitride (AlN) to combine with the high-sound-velocity material substrate.
Yet particularly on the amorphous diamond substrate, aluminium nitride (AlN) film of growth c-orientation but is difficult in diamond substrate.Russian scientist adopts the high temperature chemical vapor deposition technology, has studied in the single-crystal diamond epitaxy situation on the coplanar not, points out on monocrystalline diamond film, might realize the epitaxy of aluminium nitride (AlN) along specific direction.Yet, preparation but be polycrystalline or amorphous.Day disclosure special permission communique, the spy opens among the flat 9-227298 " carbonitride single crystal film " and discloses a kind of employing single crystalline substrate, at substrate particular surface h-GaN (0001), AlN (0001), InN (0001), h-SiC (0001), c-GaN (111), c-SiC (111), TiN (111) on MgO (111) and the Zinc oxide single crystal ZnO (0001), introduces transition layer, reduce substrate and epitaxial layer lattice mismatch, the method for growing nitride.But when making in this way, even commaterial, growth characteristics all have very big difference on its different crystal faces.This shows that directly growth c-orientation aluminium nitride (AlN) film hardly may on this class material; Adopt single crystalline substrate, introduce zinc oxide (ZnO) transition layer, reduce lattice mismatch between epitaxial film and single crystalline substrate, epitaxy nitride on particular surface has then limited the preparation and the development of high-sound-velocity material.In order to overcome the deficiency of above public technology, the invention provides a kind of can be on single crystalline substrate, also can be on polycrystalline or amorphous substrate, the method for growth high-sound-velocity material on diamond based polycrystalline or amorphous substrate particularly.
The present invention is a kind of on high-sound-velocity material (diamond, amorphous diamond, diamond like carbon film etc.) substrate, utilization is gone up at zinc oxide (ZnO) and is formed the growth of C-orientation texture easily, aluminium nitride (AlN) has the excellent lattice matching relation with zinc oxide (ZnO) again, by introducing zinc oxide (ZnO), realize the method for aluminium nitride (AlN) along C-axle oriented growth piezoelectric membrane as transition layer.Purpose is under the existing processes condition operating frequency of surface acoustic wave (SAW) device to be brought up to more than the mega hertz (GHz).Adopt C axle orientation aluminium nitride (AlN) piezoelectric membrane of the inventive method preparation, under 1 micron processing condition, can make obtaining surface acoustic wave (SAW) device that operating frequency reaches 3 mega hertzs (GHz).
The present invention grows C axle orientation aluminium nitride (AlN) piezoelectric membrane on high-sound-velocity material (as diamond, amorphous diamond, diamond like carbon film etc.) substrate can be by following approach realization.
Adopt pulsed excimer laser deposition material preparation technology, go up deposit growth C-orientation aluminium nitride (AlN)/zinc oxide (ZnO) film at high-sound-velocity material substrate (diamond, amorphous diamond, diamond like carbon film), and the concrete steps of making surface acoustic wave (SAW) device are as follows: 1, at first pulsed laser deposition (PLD) material growth room is vacuumized, vacuum tightness is 10
-6-10
-3Pa (handkerchief); 2, heated substrate, temperature are 250-350 ℃; 3, the pulsed laser energy density of adjusting laser deposition growth is 1-2 joule/square centimeter; 4, earlier with zinc oxide (ZnO) target, zinc oxide (ZnO) film of predeposition 10～30 nanometer thickness on high-sound-velocity material (diamond, amorphous diamond, diamond like carbon film etc.) substrate; 5, then the temperature of zinc oxide (ZnO)/diamond substrate is risen to 500～650 ℃, use pulsed laser deposition sputtering deposit aluminium nitride (AlN) film on zinc oxide (ZnO) transition layer again, thickness is more than 0.5 micron.6, utilize aluminium nitride (AlN) film of above-mentioned deposit growth, make interdigital electrode at aluminium nitride (AlN) film surface with the integrated circuit technology or the surface wave device technology of standard.7, the surface wave device technology of employing standard goes between and encapsulates, and making with high-sound-velocity material (as diamond, amorphous diamond, diamond like carbon film etc.) is C-orientation aluminium nitride (AlN)/zinc oxide (ZnO) the film high-frequency sound surface wave wave filter of substrate.
In addition, adopt methods such as reactive ion sputter, plasma assisted molecular beam epitaxy, also can on high-sound-velocity material (as diamond, amorphous diamond, diamond like carbon film etc.) substrate, realize the epitaxy of aluminium nitride (AlN) film that c-is orientated according to above-mentioned flow process.Need to prove that during growing aluminum nitride (AlN)/zinc oxide (ZnO) film, plasma body is the nitrogen ion to using plasma accessory molecule beam epitaxy method on high-sound-velocity material (as diamond, amorphous diamond, diamond like carbon film) substrate; Adopt the reactive ion sputtering method on high-sound-velocity material (as diamond, non-crystal diamond film, diamond like carbon film) substrate during growing aluminum nitride (AlN)/zinc oxide (ZnO) film, the temperature of zinc oxide (ZnO)/diamond substrate is 500-900 ℃.
Advantage of the present invention is apparent, and aluminium nitride (AlN) film for preparing growth c-orientation with present method on high-sound-velocity material (as diamond, amorphous diamond, diamond like carbon film etc.) substrate can be used for making the high-performance high-frequency surface acoustic wave device.In addition, utilize zinc oxide (ZnO) and aluminium nitride (AlN) excellent lattice matching relation, by introducing zinc oxide (ZnO) transition layer, c-orientation aluminium nitride (AlN) can successfully be grown on material film substrates such as diamond, thereby, realize aluminium nitride (AlN) and the combination of the contour velocity of sound material of diamond, made the high-performance high-frequency surface acoustic wave device.The present invention is a kind of method for preparing high-performance high-frequency surface acoustic wave device material practical.
Description of drawings
Fig. 1 is the present invention's c-axle orientation aluminium nitride (AlN) film of growing on the high-sound-velocity material substrate, makes the schema of high-frequency sound surface wave wave filter.Wherein, the 1st, high-sound-velocity material (as diamond, amorphous diamond, diamond like carbon film etc.) substrate; The 2nd, zinc oxide (ZnO) buffer layer of on substrate, growing with pulsed laser deposition or plasma assisted molecular beam epitaxy or reactive ion sputtering method; The 3rd, aluminium nitride (AlN) film of on zinc oxide (ZnO)/diamond, growing with pulsed laser deposition or plasma assisted molecular beam epitaxy or reactive ion sputtering method; The 4th, the interdigital electrode that aluminium nitride (AlN) film surface is made; The 5th, the lead-in wire of device; The 6th, the package casing of surface acoustic wave device.
Further set forth substantive distinguishing features of the present invention and marked improvement below by embodiment.
Scheme 1. is a substrate with the diamond thin, adopt pulse laser sediment method, pass through in-situ deposition, acquisition thickness is 0.5 micron c-orientation aluminium nitride (AlN) on zinc oxide (ZnO) transition layer, and the concrete enforcement of making surface acoustic wave device is as follows: diamond thin adopts the electron cyclotron resonace chemical vapor deposition to prepare on silicon substrate in this enforcement.During the deposition growing material, earlier pulsed laser deposition (PLD) material growth room is vacuumized, vacuum tightness is 10
-6-10
-3Handkerchief.Then, heated substrate, temperature are 250-350 ℃; The pulsed laser energy density of regulating the laser deposition growth is 1-2 joule/square centimeter; (ZnO) makes target with zinc oxide, predeposition 10～30 nanometer thickness zinc oxide (ZnO) films on substrate; After the predeposition of zinc oxide (ZnO) film, temperature with zinc oxide (ZnO)/diamond substrate rises to 500～650 ℃ again, with pulsed laser deposition on zinc oxide (ZnO) transition layer, sputter aluminium nitride (99.99%AlN) target, by growth velocity deposit aluminium nitride (AlN) film, thickness is more than 0.5 micron.In order to make surface acoustic wave device, can utilize aluminium nitride (AlN) film of above-mentioned present embodiment deposit growth, and the integrated circuit technology of application standard or surface wave device technology are made interdigital electrode at aluminium nitride (AlN) film surface, go between and encapsulate, making with the high-sound-velocity material diamond is C-orientation aluminium nitride (AlN)/zinc oxide (ZnO) the film high-frequency sound surface wave wave filter of substrate.
Scheme 2. adopts the synthetic diamond like carbon film of ionic fluids, and is substrate with the diamond like carbon film.During enforcement, zinc oxide (ZnO) transition layer of synthetic about 20 nanometer thickness of ionic fluid on the diamond like carbon film substrate rises to 500-900 ℃ by scheme 1 with underlayer temperature then earlier, and ion sputtering again is to obtain c-orientation aluminium nitride (AlN) film of 〉=0.5 micron thickness.At last, by scheme 1 method, be made into surface acoustic wave device with aluminium nitride (AlN) film that obtains.
Scheme 3. is a substrate with the diamond substrate.The diamond substrate is provided by Beijing artificial lens institute of China national building materials institute.During enforcement, first grow zinc oxide (ZnO) transition layer of about 20 nanometer thickness of deposit on diamond substrate substrate, then by scheme 1 again on zinc oxide (ZnO)/diamond substrate deposit growth 〉=0.5 micron thickness c-be orientated the AlN film.At last, press the method for solid yardage case 1, utilize aluminium nitride (AlN) film that obtains to be made into surface acoustic wave device.
Claims (3)
1, a kind of on the high-sound-velocity material substrate method of growing aluminum nitride (AlN) piezoelectric membrane, comprise diamond, amorphous diamond and diamond like carbon film substrate and pulsed laser deposition technology of preparing, it is characterized in that, on high-sound-velocity material (as diamond, amorphous diamond, diamond like carbon film) substrate, adopt the concrete steps of pulsed excimer laser deposition growing aluminum nitride (AlN)/zinc oxide (ZnO) film as follows:
A. the growth room vacuumizes, and vacuum tightness is 10
-6-10
-3Handkerchief,
B. heated substrate, temperature is 250-350 ℃,
C. the laser energy density of regulating the deposit growing film is 1-2 joule/square centimeter,
D. on the high-sound-velocity material substrate, use zinc oxide (ZnO) target sputter predeposition zinc oxide (ZnO) film,
E. the temperature with zinc oxide (ZnO)/diamond substrate rises to 500～650 ℃, again sputtering deposit aluminium nitride (AlN) film on zinc oxide (ZnO) transition layer.
2, according to claim 1 on the high-sound-velocity material substrate method of growing aluminum nitride (AlN) piezoelectric membrane, it is characterized in that adopting pulsed excimer laser deposition growing aluminum nitride (AlN)/zinc oxide (ZnO) film, thickness with zinc oxide (ZnO) target sputter predeposition zinc oxide (ZnO) film is 10～30 nanometers
3, according to claim 1 on the high-sound-velocity material substrate method of growing aluminum nitride (AlN) piezoelectric membrane, it is characterized in that adopting pulsed excimer laser deposition growing aluminum nitride (AlN)/zinc oxide (ZnO) film, aluminium nitride (AlN) film thickness of sputtering deposit is greater than 0.5 micron on zinc oxide (ZnO) transition layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN99125749A CN1094524C (en) | 1999-12-24 | 1999-12-24 | Process for growing piezoelectric film of aluminium nitride on substrate of high-sound-velocity material |
Applications Claiming Priority (1)
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|---|---|---|---|
| CN99125749A CN1094524C (en) | 1999-12-24 | 1999-12-24 | Process for growing piezoelectric film of aluminium nitride on substrate of high-sound-velocity material |
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| CN1257940A CN1257940A (en) | 2000-06-28 |
| CN1094524C true CN1094524C (en) | 2002-11-20 |
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| CN99125749A Expired - Fee Related CN1094524C (en) | 1999-12-24 | 1999-12-24 | Process for growing piezoelectric film of aluminium nitride on substrate of high-sound-velocity material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101322258B (en) * | 2003-01-22 | 2010-10-20 | 独立行政法人产业技术综合研究所 | A piezoelectric element and method for manufacturing |
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| CN100348774C (en) * | 2005-06-24 | 2007-11-14 | 天津理工大学 | Nano-diamond film suitable for SAW device, its preparation method and use |
| CN100461630C (en) * | 2006-01-19 | 2009-02-11 | 湖北大学 | Method for making bulk acoustic wave resonator with AIN crystallization transition layer |
| CN101630947B (en) * | 2008-07-15 | 2012-04-18 | 大同股份有限公司 | High-frequency surface acoustic wave element |
| CN102185583A (en) * | 2011-03-16 | 2011-09-14 | 大连理工大学 | AlN/GaN/freestanding diamond structured surface acoustic wave (SAW) device and preparation method thereof |
| CN102122936A (en) * | 2011-04-08 | 2011-07-13 | 天津理工大学 | Aluminum nitride piezoelectric membrane for surface acoustic wave (SAW) device and preparation method thereof |
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| CN103014654B (en) * | 2012-12-27 | 2014-12-17 | 沈阳工程学院 | Preparation method of AlN/ZnO/InGaN/diamond/Si multilayer-structure surface acoustic wave filter |
| CN106191795A (en) * | 2016-07-01 | 2016-12-07 | 嘉兴学院 | A kind of preparation method based on the Photoluminescence thin film mixing europium aluminium nitride |
| US20210234527A1 (en) * | 2017-09-22 | 2021-07-29 | Anhui Anuki Technologies Co., Ltd. | Manufacturing Method for Piezoelectric Resonator and Piezoelectric Resonator |
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| CN107634734A (en) * | 2017-09-27 | 2018-01-26 | 中国科学院半导体研究所 | SAW resonator, wave filter and preparation method thereof |
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| CN111101204A (en) * | 2019-12-12 | 2020-05-05 | 华南师范大学 | Single crystal AlN film and preparation method and application thereof |
| CN112614918A (en) * | 2020-12-01 | 2021-04-06 | 木昇半导体科技(苏州)有限公司 | Epitaxial material growth method with high internal quantum rate |
| CN117535790B (en) * | 2024-01-10 | 2024-04-02 | 北京大学 | Molecular beam epitaxial growth table based on acoustic surface wave in-situ injection and implementation method thereof |
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| JPH04337062A (en) * | 1991-05-15 | 1992-11-25 | Toyota Central Res & Dev Lab Inc | Surface treating member and its production |
| JPH09227298A (en) * | 1996-02-23 | 1997-09-02 | Sumitomo Electric Ind Ltd | Carbon nitride single crystal film |
-
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04337062A (en) * | 1991-05-15 | 1992-11-25 | Toyota Central Res & Dev Lab Inc | Surface treating member and its production |
| JPH09227298A (en) * | 1996-02-23 | 1997-09-02 | Sumitomo Electric Ind Ltd | Carbon nitride single crystal film |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101322258B (en) * | 2003-01-22 | 2010-10-20 | 独立行政法人产业技术综合研究所 | A piezoelectric element and method for manufacturing |
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