CN100461630C - Method for making bulk acoustic wave resonator with AIN crystallization transition layer - Google Patents
Method for making bulk acoustic wave resonator with AIN crystallization transition layer Download PDFInfo
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- CN100461630C CN100461630C CNB2006100182541A CN200610018254A CN100461630C CN 100461630 C CN100461630 C CN 100461630C CN B2006100182541 A CNB2006100182541 A CN B2006100182541A CN 200610018254 A CN200610018254 A CN 200610018254A CN 100461630 C CN100461630 C CN 100461630C
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- acoustic wave
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Abstract
Using DC magnetron sputtering process to deposit AlN piezoelectric thin film on Pt electrode, the method for preparing bulk acoustic wave resonator includes three steps: (1) fabricating transition layer of Al1-xNx rich in Al; (2) carrying out annealing treatment of crystallization for transition layer of non crystalline Al1-xNx rich in Al; (3) depositing a layer of AlN piezoelectric thin film in c axes orientation on processed transition layer of Al1-xNx rich in Al by using DC magnetron sputtering. The invention can control thickness of transition layer, improves stress behavior of transition layer, raises c axes orientation of crystal grain so as to produce bulk acoustic wave resonator in high performance.
Description
Technical field
What the present invention relates to is the manufacture method of bulk acoustic wave resonator, particularly has the manufacture method of the bulk acoustic wave resonator of AlN crystallization transition layer.
Background technology
Along with the quick growth of wireless telecommunications demands such as satellite, navigation, cell phone, people more and more pay close attention to the communication applications of higher frequency.The communication system of any radio frequency band all be can't do without high performance prefilter.Conventional filter does not satisfy high performance requirement, substitutes conventional radio frequency filter in the mobile phone with bulk accoustic wave filter (FBAR), can solve a series of problems that above-mentioned conventional filter runs into.A complete bulk accoustic wave filter (FBAR) is made up of by certain mode cascade several body acoustic resonator unit, its resonant element structure as shown in Figure 1, it has used the sandwich structure of bottom electrode-piezoelectric membrane-top electrode.Its operation principle is: input electrical signal is converted into acoustical signal by the inverse piezoelectric effect of material; When sound wave during at the piezoelectric layer interior resonance, impedance shows as maximum (parallel resonance) or minimum value (series resonance); Piezoelectric effect by film is converted into signal of telecommunication output with acoustical signal at last.Wherein the quality of AlN piezoelectric membrane has a significant impact the quality of device.The AlN piezoelectric membrane generally is to go up with the preparation of direct current magnetron sputtering process deposition at metal bottom electrode (often being the Pt electrode).The piezoelectric layer of this AlN piezoelectric membrane is a polycrystalline, but requires all AlN crystal grain along C axle height-oriented (direction of growth is along the C axle).The inconsistent grain growth of direction meeting seriously reduces AlN piezoelectricity coupling factor and quality factor.
Studies show that, with direct current magnetron sputtering process on the Pt electrode during depositing Al N film, the amorphous transition zone that between AlN film and the Pt electrode thickness to be arranged be 100-200nm, this causes more greatly because of Pt and AlN mismatch degree.Though the C axle preferrel orientation degree of film can be optimized with the increase of AlN film thickness, the AlN film thickness that is deposited in other words is big more, preferred orientation is just good more, but this can make the resonance frequency of device reduce, because the resonance frequency f=Vg/2d of AlN bulk acoustic wave resonator (Vg is the velocity of sound in the formula, and d is a thickness).Therefore, continuous increase along with present mobile communication frequency, the thickness of the AlN film that need deposit should be more and more littler, the status of the amorphous transition zone of this layer 100-200nm in whole AlN film is also more and more outstanding, so thick amorphous transition zone and big lattice mismatch can cause the bigger stress in film inside, and this also will reduce the piezoelectricity coupling factor and the quality factor of AlN bulk acoustic wave resonator.
Summary of the invention
The objective of the invention is to propose a kind of thickness that can control transition zone, improve transition zone stress performance, improve crystal grain C axle orientation, produce the manufacture method of high performance bulk acoustic wave resonator.
The present invention is achieved in that with direct current magnetron sputtering process and undertaken by following three steps during depositing Al N piezoelectric membrane on the Pt electrode,
The first step is made Al
1-xN
xRich Al transition zone.Conditioned reaction atmosphere is Ar:N
2=99:1～95:5, operating air pressure 0.1～0.7Pa, target-substrate distance 3～10cm, 300～400 ℃ of underlayer temperatures, power 50～200W, magnetically controlled DC sputtering 0.5～2 minute is at the Al about deposition one deck 10nm on the Pt electrode
1-xN
x(0.05＜x＜0.5) rich Al transition zone.
Second step, subsequent annealing.Adjust underlayer temperature to 400～550 ℃, to this amorphous Al
1-xN
xRich Al transition zone carry out subsequent annealing and handle 15～30min.
In the 3rd step, make AlN orientation piezoelectric thin film layer.Conditioned reaction atmosphere is Ar:N
2=90:10～3:2, operating air pressure 0.2～0.5Pa, target-substrate distance 3～10cm, 200～400 ℃ of underlayer temperatures, power 100～200W, magnetically controlled DC sputtering 20～30 minutes, deposition one deck c axle orientation AlN piezoelectric membrane on the Pt electrode.
In the method for the invention, the deposition of rich Al transition zone and high C axle orientation AlN film can finish by adjusting the disposable depositions of parameter such as sputtering atmosphere, sputtering power and underlayer temperature, does not increase loaded down with trivial details on the operation.Whole transition region thickness and composition are artificially adjustable, controlled, can realize Al
1-xN
xIn x value from 0.05 to 0.5 change continuously, and it reaches partially or completely crystallization, whole layer thickness can be controlled in the 50nm.(100～200nm) thickness reduce more than 50% the amorphous transition zone of the direct AlN film that deposits on the Pt electrode of ratio tradition, and realized the continuous adjusting of transition zone composition, because in the rich Al transition zone, the mismatch degree (8%) of Al and AlN is little than Pt and AlN's (12%), thereby mismatch stress is at utmost eliminated.And the partially or completely crystallization of whole transition zone after by annealing process established excellent basis for the AlN that continues to prepare high C axle preferrel orientation thereon.According to above 2 points, the Qm value of whole resonator can greatly be improved.
Description of drawings
Fig. 1 is a bulk acoustic resonator structure of the present invention.
Fig. 2 has crystallization transition layer for the present invention and does not have AlN film (002) the peak width curve of growing on the crystallization transition layer.
The AlN film surface appearance that Fig. 3 grows on the crystallization transition layer for the present invention does not have.
The AlN film surface appearance that Fig. 4 grows on the crystallization transition layer for the present invention has.
Fig. 5 is Si/Si
3N
4No crystallization transition layer AlN film sample section SEM picture on the/Ti/Pt electrode.
Fig. 6 is Si/Si
3N
4Crystallization transition layer AlN film sample section SEM picture is arranged on/Ti/Pt the electrode.
Embodiment
The present invention is further described for following embodiment.
Embodiment one:
The first step is made Al
1-xN
xRich Al transition zone.Conditioned reaction atmosphere is Ar:N
2=97:3, operating air pressure 0.2Pa, target-substrate distance 3cm, 350 ℃ of underlayer temperatures, power 125W, magnetically controlled DC sputtering 0.5 minute is at the Al about deposition one deck 10nm on the Pt electrode
1-xN
x(0.05＜x＜0.5) rich Al transition zone.
Second step, subsequent annealing.Adjust underlayer temperature to 450 ℃, to this amorphous Al
1-xN
xRich Al transition zone carry out subsequent annealing and handled 25 minutes.
In the 3rd step, make AlN orientation piezoelectric thin film layer.Conditioned reaction atmosphere is Ar:N
2=3:2, operating air pressure 0.3Pa, target-substrate distance 3cm, 240 ℃ of underlayer temperatures, power 100W, magnetically controlled DC sputtering 30 minutes, deposition one deck c axle orientation AlN piezoelectric membrane on the Pt electrode.
Embodiment two:
Removing reaction atmosphere is Ar:N
2Outside=the 95:5, all the other are identical with embodiment one.
Comparative example's (no AlN crystallization transition layer)
On the Pt electrode, directly depositing Al N film is 30 minutes, and preparation condition is that reaction atmosphere is Ar:N
2=3:2, operating air pressure 0.3Pa, target-substrate distance 3cm, 240 ℃ of underlayer temperatures, power 100W.
Adopt D8X-Ray tester specimen halfwidth (FWHM), the AFM tester is tested its surface topography and roughness thereof, SEM tester viewing film section microstructure.Test result as Fig. 2,3,4,5,6 and table one shown in.As seen the AlN roughness of film decreases, and the c-axle preferrel orientation has obtained improving significantly, sample column crystal marshalling, the densification of AlN crystallization transition layer are wherein arranged, and transition region thickness descends to some extent.
The structural parameters of table one or two kind of AlN oriented film
| No crystallization transition layer | Crystallization transition layer Ar:N is arranged 2＝97：3 | Crystallization transition layer Ar:N is arranged 2＝95：5 | |
| Halfwidth | 5.3943° | 4.8657° | 5.2031° |
| Surface roughness | 2.459nm | 2.054nm | 23022nm |
Claims (1)
1. manufacture method with bulk acoustic wave resonator of AlN crystallization transition layer during depositing Al N piezoelectric membrane, is characterized in that being undertaken by following three steps on the Pt electrode with direct current magnetron sputtering process,
The first step is made Al
1-xN
xRich Al transition zone, conditioned reaction atmosphere is Ar:N
2=99:1～95:5, operating air pressure 0.1～0.7Pa, target-substrate distance 3～10cm, 300～400 ℃ of underlayer temperatures, power 50～200W, magnetically controlled DC sputtering 0.5～2 minute is at the Al about deposition one deck 10nm on the Pt electrode
1-xN
xRich Al transition zone, wherein 0.05＜x＜0.5;
In second step, subsequent annealing is adjusted underlayer temperature to 400～550 ℃, to this amorphous Al
1-xN
xRich Al transition zone carry out subsequent annealing and handled 15～30 minutes;
The 3rd step, make AlN orientation piezoelectric thin film layer, conditioned reaction atmosphere is Ar:N
2=90:10～3:2, operating air pressure 0.2～0.5Pa, target-substrate distance 3～10cm, 20～400 ℃ of underlayer temperatures, power 100～200W, magnetically controlled DC sputtering 20～30 minutes, deposition one deck c axle orientation AlN piezoelectric membrane on the Pt electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100182541A CN100461630C (en) | 2006-01-19 | 2006-01-19 | Method for making bulk acoustic wave resonator with AIN crystallization transition layer |
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|---|---|---|---|
| CNB2006100182541A CN100461630C (en) | 2006-01-19 | 2006-01-19 | Method for making bulk acoustic wave resonator with AIN crystallization transition layer |
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| CN1893265A CN1893265A (en) | 2007-01-10 |
| CN100461630C true CN100461630C (en) | 2009-02-11 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021134606A1 (en) | 2019-12-31 | 2021-07-08 | Applied Materials, Inc. | Method and apparatus for deposition of piezo-electric materials |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102023184B (en) * | 2010-10-28 | 2012-07-25 | 山东科技大学 | Double-sensing-layer body sound-wave hydrogen resonant transducer |
| CN107342357B (en) * | 2016-04-28 | 2022-08-16 | 新科实业有限公司 | Thin film piezoelectric element and method for manufacturing the same |
| WO2021155531A1 (en) * | 2020-02-06 | 2021-08-12 | Applied Materials, Inc. | Method and apparatus for tuning film properties during thin film deposition |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5571603A (en) * | 1994-02-25 | 1996-11-05 | Sumitomo Electric Industries, Ltd. | Aluminum nitride film substrate and process for producing same |
| CN1257940A (en) * | 1999-12-24 | 2000-06-28 | 中国科学院上海冶金研究所 | Process for growing piezoelectric film of aluminium nitride on substrate of high-sound-velocity material |
| JP2002076824A (en) * | 2000-08-31 | 2002-03-15 | Murata Mfg Co Ltd | Piezoelectric thin film resonator, filter and electronic device |
| US6933809B2 (en) * | 2003-04-07 | 2005-08-23 | Samsung Electro-Mechanics Co., Ltd. | Film bulk acoustic resonator (FBAR) device and method for producing the same |
-
2006
- 2006-01-19 CN CNB2006100182541A patent/CN100461630C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5571603A (en) * | 1994-02-25 | 1996-11-05 | Sumitomo Electric Industries, Ltd. | Aluminum nitride film substrate and process for producing same |
| CN1257940A (en) * | 1999-12-24 | 2000-06-28 | 中国科学院上海冶金研究所 | Process for growing piezoelectric film of aluminium nitride on substrate of high-sound-velocity material |
| JP2002076824A (en) * | 2000-08-31 | 2002-03-15 | Murata Mfg Co Ltd | Piezoelectric thin film resonator, filter and electronic device |
| US6933809B2 (en) * | 2003-04-07 | 2005-08-23 | Samsung Electro-Mechanics Co., Ltd. | Film bulk acoustic resonator (FBAR) device and method for producing the same |
Non-Patent Citations (2)
| Title |
|---|
| 用磁控溅射技术制备氮化铝薄膜. 范正修，何朝玲.中国激光，第16卷第10期. 1989 |
| 用磁控溅射技术制备氮化铝薄膜. 范正修，何朝玲.中国激光，第16卷第10期. 1989 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021134606A1 (en) | 2019-12-31 | 2021-07-08 | Applied Materials, Inc. | Method and apparatus for deposition of piezo-electric materials |
| EP4085159A4 (en) * | 2019-12-31 | 2023-09-27 | Applied Materials, Inc. | Method and apparatus for deposition of piezo-electric materials |
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| CN1893265A (en) | 2007-01-10 |
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